US6667477B2 - Emission electron microscope - Google Patents

Emission electron microscope Download PDF

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Publication number
US6667477B2
US6667477B2 US10/204,643 US20464302A US6667477B2 US 6667477 B2 US6667477 B2 US 6667477B2 US 20464302 A US20464302 A US 20464302A US 6667477 B2 US6667477 B2 US 6667477B2
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electron
deflection element
electrons
electron microscope
microscope according
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US20030010915A1 (en
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Krzysztof Grzelakowski
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/285—Emission microscopes, e.g. field-emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06383—Spin polarised electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/285—Emission microscopes
    • H01J2237/2857—Particle bombardment induced emission

Definitions

  • the subject matter of the invention is an emission electron microscope for the imaging of the surfaces and the angle distribution of the electrons emitted from the surface.
  • the system of the electrostatic lenses is characterized in that one of the lenses, e.g. the first, has a polished, flat electrode that deflects the light into the direction of the surface.
  • German patent application DE 198 9003 is an electron optical, imaging photo electron microscope that contains an electrostatic lens system and an image converter, the attribute of which is the suppression or retardation of the electrons.
  • the emission electron microscope which comprises an objective lens having a contrast diaphragm system, a stigmator, and an electron optical imaging system having at least one lens, is additionally provided with a second, independent imaging system that is parallel to the first imaging system, and two electron detectors for the independent receipt of two images: the real image and the image of the angle distribution of the electrons, which is possible by the electronic switching of the potentials of the two deflection elements, which deflect the electron beam about an angle ⁇ and ⁇ , and are electron optically separated from one another by double their focal length, whereby each deflection element is comprised of two spherical and concentric electrodes, of which the outermost one has a bore in order to enable the drift of the electrons along the electron optical axis with the deflection being switched off.
  • the emission electron microscope is also provided with: a localized electron source that is disposed closely adjacent to the electron optical axis of the objective lens and emits the electrons at an angle ⁇ to the axis of the objective lens, a contrast diaphragm system in one of the planes that is conjugated to the focal plane of the objective lens, and an image diaphragm system in one of the image planes of the emission electron microscope.
  • the emission electron microscope is provided in an electron suppressing or retarding system that comprises at least one electrode that simulates a spherical, suppressing central field having a center in the focal point of the objective lens.
  • the electron source can also become the source for the spin-polarized electrons.
  • the deflection system is provided with an electron detector that is disposed after the bore in the outer deflection electrode of the second deflection element and serves for the receipt of the energy spectrum.
  • the emission electron microscope which comprises: objective lens, contrast diaphragm system, stigamator, and an imaging system having at least one lens
  • the emission electron microscope is provided not only with a localized electron source that is disposed closely adjacent to the electron optical axis of the objective lens, and that emits the electrons at the angle ⁇ to the axis of the objective lens, as well as a contrast diaphragm system in one of the planes conjugated to the focal plane of the objective lens, and an image diaphragm system in one of the image planes of the system.
  • the electron suppression or retardation system comprises at least one electrode that simulates a spherical and suppressing central field with the center in the focal point of the objective lens, and in one of the planes correlated to the focal plane of the objective lens there is disposed a contrast diaphragm system.
  • the electron source or the source of the spin-polarized electrons is provided with a deflection.
  • a piezoquartz driven specimen manipulator Coupled with the objective lens of the emission electron microscope, in a mechanical manner, is a piezoquartz driven specimen manipulator that enables the shifting, cooling and heating of the specimen.
  • An advantageous result of the invention is provided by: the characteristic of the imaging of the specimen surface with electrons from the selected energy range, the possibility of the local measurements of the energy spectrum and the angle distribution of the electrons, the possibility of the simultaneous receipt of the real image and an image of the angle distribution of the electrons correlated thereto.
  • the production of this effect is realized by the use of an electronic optical deflection system that displaces the electron beam in a parallel manner, and the insertion of the electron gun into the system.
  • FIG. 1 illustrates an emission electron microscope having two parallel imaging systems, an electron source, and an electron suppression or retardation system
  • FIG. 2 illustrates an emission electron microscope having two parallel imaging systems and an electron source
  • FIG. 3 illustrates an emission electron microscope having an imaging system and an electron source
  • FIG. 4 illustrates an emission electron microscope having an imaging system, electron source, and an electron suppression or retardation system.
  • the emission electron microscope illustrated in FIG. 1 comprises: an objective lens 1 with a specimen manipulator 3 and containing the contrast apertured diaphragm system 4 and stigmator 6 , electron optical lenses 20 , 21 , 22 , 23 in the imaging systems K 1 and K 2 , electron optical lenses 10 , 12 , electron source 8 with deflection elements 9 , and the electron optical deflection system 13 and 17 that displaces the electron beam in a parallel manner and energetically analyzes it.
  • the system that displaces the electron beam in a parallel manner comprises: concentric deflection electrodes 13 a , 13 b and concentric deflection electrodes 17 a , 17 b , that are identical thereto and that assume the shape of partial spheres, a lens 15 , stigmator 16 , and electron detector 19 .
  • the first deflection element 13 deflects the electron beam about an angle ⁇ that is less than 90°
  • the second deflection element 17 deflects the electron beam about an angle- ⁇ that leads to its parallel displacement.
  • the annular electrodes 14 can be installed that simulate a spherical field produced by the deflection elements.
  • Both deflection elements 13 and 17 are electron optically spaced from one another by double their focal length, and form an electron optical system in the center of symmetry of which is disposed an electron optical lens 15 .
  • Parallel displacement of an electron optical axis 29 , 30 at the input and output of the system enables the observation of the microscopic image in two imaging systems K 1 and K 2 .
  • the electron beam is subjected to a dual deflection, i.e. parallel displacement of the electron optical axis, and is thereby conveyed into the imaging system K 2 , which leads to the energetic selective imaging of the specimen surface with the electron detector 25 .
  • a piezoelectrical mechanism of the contrast diaphragms 4 and stigmator 6 Disposed in the interior of the objective lens 1 is a piezoelectrical mechanism of the contrast diaphragms 4 and stigmator 6 , which corrects the image errors of the objective lens.
  • the suppression or retardation system 7 which comprises a single or several electrodes, and that simulates a spherical central field with a center in the focal point (or in a point electron optically correlated therewith) of the objective lens 1 , enables the improvement of the energy scattering capacity of the deflection element 13 via the reduction of drift energy of the electrons in the emission electron microscope.
  • the electron optical lens 12 serves as a field lens that as a function of the operating mode of the emission electron microscope transfers either the diffraction image or the real image into the center of the electron optical lens 15 .
  • a fragment of the image field even less than 1 ⁇
  • an electron detector 19 to measure the energy spectrum of this selected field (in this case, the deflection element 13 is switched on and 17 is switched off), or with the aid of the electron optical imaging system K 1 (in this case the deflection element 13 is switched off) to measure the angle distribution of the electrons from the selected field.
  • the electrons form a diffraction image or (as a function of the settings of the lenses 10 and 12 ) a real image (to which all electrons contribute) at the input of the lens 20 , which after the enlargement appears upon the electron detector 27 .
  • the switching over of the potentials with the period of e.g. 100 ms leads to the alternating appearance of the images: an energetically selective real image upon the electron detector 25 , and an image of the angle distribution of the electrons (or real image to which all electrons contribute) upon the electron detector 27 .
  • Utilization of the electronic closure of the two CCD cameras, synchronized e.g. with a control signal having the period e.g. 100 ms, allows the effect of the pulsation of the simultaneously and adjacently appearing images to be avoided.
  • the primary electron beam passes to the specimen 2 out of the electron source 8 , which is disposed closely adjacent to the electron optical axis of the objective lens.
  • Primary electrons that enter into the region of the objective lens at an angle ⁇ to the axis thereof, and as a consequence of the application of the objective field to the point of intersection of the objective axis with the specimen are deflected, irradiate or illuminate the specimen at an angle greater than ⁇ .
  • the spherical or cylindrical defection electrodes 9 can be provided at the output of the electron source 8 , which reduces the spacing between the electron optical axis 28 of the primary beam and the electron optical axis 29 of the objective lens, and consequently leads to the reduction of the angle of incidence of the electrons on the specimen 2 .
  • an image apertured diaphragm system 11 with which it is possible to select a fragment of the image portion (also less than 1 ⁇ m) and, with the aid of an electron detector 27 or with some other independent measuring system, e.g. deflection element 13 and electron detector 19 , to measure the energy spectrum of the selected portion, or with the aid of the electron optical imaging system K 1 to measure the angle distribution of the electrons from the selected portion.
  • a contrast apertured diaphragm ( 4 a ) is provided in one of the planes conjugated to the focal plane 5 of the objective lens (e.g. in the center of symmetry of the deflection elements and 17 ).
  • the emission electron microscope of FIG. 4 is additionally equipped with a suppression or retardation system 7 that comprises one or more electrodes that simulate a spherical central field with a center in the focal point of the objective lens.
  • Mechanically coupled to the objective lens of the emission electron microscope is a peizoquartz specimen manipulator that enables a precise displacement, cooling and heating of the specimen.
  • the emission electron microscope is conceived for use under ultra high vacuum conditions, for which reason all flanges and outer dimensions are subjected to the standard CF.
  • the base flange of the emission electron microscope is an 8′′ flange DN150CF, which is provided with six mini CF flanges having electrical ducts in two parallel conduits having 23 ⁇ 4′′ flanges.
  • the overall instrument is covered with a magnetic shielding that protects the slow electrons in the region of the electron optical lenses from the negative influence of the external fields.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
US10/204,643 2000-02-20 2001-02-05 Emission electron microscope Expired - Fee Related US6667477B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
PL338538 2000-02-20
PL00338538A PL338538A1 (en) 2000-02-20 2000-02-20 Emission-type electron microscope
PLP.338538 2000-02-20
PCT/PL2001/000010 WO2001061725A1 (de) 2000-02-20 2001-02-05 Emissionselektronenmikroskop

Publications (2)

Publication Number Publication Date
US20030010915A1 US20030010915A1 (en) 2003-01-16
US6667477B2 true US6667477B2 (en) 2003-12-23

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Country Status (5)

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US (1) US6667477B2 (de)
AU (1) AU2001230639A1 (de)
DE (2) DE10164895B4 (de)
PL (1) PL338538A1 (de)
WO (1) WO2001061725A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070115468A1 (en) * 2005-10-28 2007-05-24 Barnard Bryan R Spectrometer for surface analysis and method therefor
US20070164217A1 (en) * 2004-01-14 2007-07-19 Erika Kanematsu Projection electron microscope, electron microscope, specimen surface observing method and micro device producing method
DE102005031537B4 (de) * 2004-06-28 2007-10-11 Grzelakowski, Krzysztof, Dr. Abbildender Energiefilter für geladene Teilchen, insbesondere Elektronen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10252129A1 (de) * 2002-11-04 2004-05-27 Omicron Nano Technology Gmbh Energiefilter für elektrisch geladene Teilchen und Verwendung des Energiefilters
KR102493760B1 (ko) * 2017-09-28 2023-02-06 에이에스엠엘 네델란즈 비.브이. 보상 렌즈를 갖는 광학 시스템
CN110993473A (zh) * 2019-11-29 2020-04-10 河南河大科技发展有限公司 一种透射电子显微镜高压电子枪系统倒置的装置

Citations (8)

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US4255661A (en) 1978-09-29 1981-03-10 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Electrostatic emission lens
US4564758A (en) 1984-02-01 1986-01-14 Cameca Process and device for the ionic analysis of an insulating sample
US4978855A (en) * 1989-02-10 1990-12-18 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Electron microscope for investigation of surfaces of solid bodies
US4990776A (en) * 1987-08-28 1991-02-05 Hitachi, Ltd. Electron microscope
US5969356A (en) * 1995-11-23 1999-10-19 Focus Gmbh Double reflection electron emission microscope
US6259094B1 (en) * 1997-11-14 2001-07-10 Kabushiki Kaisha Toshiba Electron beam inspection method and apparatus
US6455848B1 (en) * 1998-12-17 2002-09-24 Koninkijke Philips Electronics N.V. Particle-optical apparatus involving detection of Auger electronics
US6479819B1 (en) * 1997-08-19 2002-11-12 Nikon Corporation Object observation apparatus and object observation

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DE3943211C2 (de) * 1989-12-28 1995-02-02 Max Planck Gesellschaft Abbildendes elektronenoptisches Gerät
US6011262A (en) * 1997-03-26 2000-01-04 Nikon Corporation Object observing apparatus and method for adjusting the same
US5973323A (en) * 1997-11-05 1999-10-26 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope
JP3724949B2 (ja) * 1998-05-15 2005-12-07 株式会社東芝 基板検査装置およびこれを備えた基板検査システム並びに基板検査方法

Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
US4255661A (en) 1978-09-29 1981-03-10 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Electrostatic emission lens
US4564758A (en) 1984-02-01 1986-01-14 Cameca Process and device for the ionic analysis of an insulating sample
US4990776A (en) * 1987-08-28 1991-02-05 Hitachi, Ltd. Electron microscope
US4978855A (en) * 1989-02-10 1990-12-18 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Electron microscope for investigation of surfaces of solid bodies
US5969356A (en) * 1995-11-23 1999-10-19 Focus Gmbh Double reflection electron emission microscope
US6479819B1 (en) * 1997-08-19 2002-11-12 Nikon Corporation Object observation apparatus and object observation
US6259094B1 (en) * 1997-11-14 2001-07-10 Kabushiki Kaisha Toshiba Electron beam inspection method and apparatus
US6455848B1 (en) * 1998-12-17 2002-09-24 Koninkijke Philips Electronics N.V. Particle-optical apparatus involving detection of Auger electronics

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XP002168566 (Article-Springer, Berlin).
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070164217A1 (en) * 2004-01-14 2007-07-19 Erika Kanematsu Projection electron microscope, electron microscope, specimen surface observing method and micro device producing method
US7456401B2 (en) * 2004-01-14 2008-11-25 Nikon Corporation Projection electron microscope, electron microscope, specimen surface observing method and micro device producing method
DE102005031537B4 (de) * 2004-06-28 2007-10-11 Grzelakowski, Krzysztof, Dr. Abbildender Energiefilter für geladene Teilchen, insbesondere Elektronen
US20070115468A1 (en) * 2005-10-28 2007-05-24 Barnard Bryan R Spectrometer for surface analysis and method therefor
US7714285B2 (en) * 2005-10-28 2010-05-11 Thermo Fisher Scientific Inc. Spectrometer for surface analysis and method therefor
US20100181476A1 (en) * 2005-10-28 2010-07-22 Barnard Bryan Robert Spectrometer for Surface Analysis and Method Therefor

Also Published As

Publication number Publication date
PL338538A1 (en) 2001-08-27
WO2001061725B1 (de) 2001-11-22
DE10190535B4 (de) 2007-09-20
WO2001061725A1 (de) 2001-08-23
AU2001230639A1 (en) 2001-08-27
DE10190535D2 (de) 2003-02-20
DE10164895B4 (de) 2007-10-04
US20030010915A1 (en) 2003-01-16

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