US6323718B1 - Normally-on bidirectional switch - Google Patents

Normally-on bidirectional switch Download PDF

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Publication number
US6323718B1
US6323718B1 US09/209,381 US20938198A US6323718B1 US 6323718 B1 US6323718 B1 US 6323718B1 US 20938198 A US20938198 A US 20938198A US 6323718 B1 US6323718 B1 US 6323718B1
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Prior art keywords
switch
gate
thyristor
anode
terminal
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English (en)
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Pierre Rault
Eric Bernier
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STMicroelectronics SA
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STMicroelectronics SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Definitions

  • the present invention relates to bidirectional switches for controlling a load connected to the mains.
  • the present invention more specifically applies to “normally-on” switches, that is, switches which are spontaneously in the on-state (i.e., conducting) and the control of which includes opening the switch to block (i.e., disconnect) the load supply.
  • FIG. 1 shows a first example of a normally-on bidirectional switch 1 .
  • Switch 1 is essentially formed of a triac 11 connected between two power terminals 12 , 13 .
  • Gate G of triac 11 is connected, via a controllable switch 14 , to a first power terminal 12 or first anode A 1 of triac 11 .
  • a resistor R 1 of high value connects gate G of triac 11 to a second power terminal 13 or second anode A 2 of the triac, so that the series association of resistor R 1 and of switch 14 is connected in parallel on triac 11 .
  • Switch 1 is meant to be connected in series with a load 15 (Q) between two terminals 16 , 17 of application of an a.c. supply voltage Vac, for example, the mains voltage.
  • Control switch 14 can be a manual control switch or receive a control signal CTRL provided by an appropriate control circuit.
  • switch 14 is open.
  • a voltage is applied across switch 1 , that is, when an a.c. voltage is applied between terminals 16 and 17 , a current flows in gate G of triac 11 through resistor R 1 and triggers the triac which remains on as long as it conducts a current, that is, until the zero crossing of the a.c. voltage. This process is repeated for each halfwave of a.c. supply voltage Vac.
  • a current flows from terminal 13 through resistor R 1 , and from gate G to anode A 1 of triac 11 , until this current is sufficient to trigger the triac in the first quadrant (positive gate and anode currents).
  • the current flows therethrough until the end of the halfwave, where the triac turns off.
  • a current flows, from terminal 12 , from anode A 1 to gate G of triac 11 and through resistor R 1 , until this current is sufficient to trigger the triac in the third quadrant (negative anode and gate currents).
  • Resistor R 1 is sized according to the gate current required to trigger the triac and to the maximum acceptable supply voltage (generally on the order of 20 volts) to turn on switch 1 at the beginning of each halfwave.
  • switch 14 is closed (by an action exterior to switch 1 )
  • gate G and anode A 1 of the triac are short-circuited and the triac can no longer trigger and remains in the off-state.
  • a disadvantage of a switch such as shown in FIG. 1 is that, when the triac is maintained in the off-state (switch 14 being closed), resistor R 1 dissipates a high power. Indeed, the triggering current of a triac is relatively high, which does not allow use of a high resistance R 1 while respecting the imperative of a low voltage triggering which characterizes a normally-on switch. Presently, the triacs which are most sensitive at the triggering require a gate current of several mA. This high triggering current is linked to the structure of a triac. A sufficiently high triggering current to avoid that the residual non-recombined loads in the semiconductor cause a restarting of the triac at halfwave ends must indeed be provided.
  • the triacs known under denomination Z0103 and Z0402 require a gate current of 3 mA to be triggered.
  • FIG. 2 shows an example of such a normally-on bidirectional switch 2 , connected in series with a load 25 between two terminals 26 , 27 of application of an a.c. supply voltage Vac.
  • a triac 21 is connected between two power terminals 22 , 23 of switch 2 to which are respectively connected a terminal (for example, 27 ) of application of the supply voltage and a first terminal of load 25 .
  • Gate G of triac 21 is connected to an a.c. input of a diode bridge 28 , the other a.c. input of which is connected to terminal 23 , and thus to an anode (for example, A 2 ) of triac 21 .
  • a resistor R 2 in series with a switch 24 of control of switch 2 , is connected between the (+) and ( ⁇ ) rectified voltage terminals of bridge 28 .
  • a thyristor 29 is connected in parallel to the series association of resistor R 2 and switch 24 , its anode being connected to the positive rectified voltage terminal (+) of bridge 28 and its cathode being connected to the negative terminal ( ⁇ ).
  • the gate of thyristor 29 is connected to the connection node of resistor R 2 and switch 24 .
  • switch 2 shown in FIG. 2 is the following.
  • switch 24 is open.
  • a current flows, from terminal 23 , through a first diode of bridge 28 , resistor R 2 , the gate and the cathode of thyristor 29 , the diode of bridge 28 opposite to the first one, then from gate G to anode A 1 of triac 21 .
  • the latter turns on.
  • the latter triggers, thus short-circuiting all other components of switch 2 .
  • a current flows from terminal 22 , from anode A 1 to the gate of triac 21 , through a third diode of bridge 28 , from the cathode to the gate of thyristor 29 , through resistor R 2 , then through a diode of bridge 28 opposite to the third one.
  • switch 2 is triggered in two steps, by the turning-on of thyristor 29 short-circuiting resistor R 2 and switch 24 , then by the turning-on of triac 21 .
  • a thyristor 29 is used in order to provide a component that is more sensitive to triggering than a triac. Indeed, it is known to implement thyristors (with a cathode-gate), having triggering current on the order of some hundred ⁇ A, or even less. Accordingly, resistor R 2 can be sized with a much higher value than in the switch shown in FIG. 1 . As a result, when switch 24 is closed to prevent the triggering of thyristor 29 by short-circuiting its gate and its cathode, the power dissipated in switch 2 is much lower.
  • resistor R 2 can have a value on the order of 200 k ⁇ . As a result, the dissipated power when switch 24 is on is on the order of 100 mW.
  • a first disadvantage is that it requires a high number of components due to the presence of diode bridge 28 . Further, all these components have to withstand the high a.c. supply voltage (for example, approximately 220 volts).
  • switch 24 is not referenced to a.c. supply voltage Vac but to the negative rectified voltage terminal of bridge 28 . This makes the control of switch 24 more complex and limits the applications in which such a switch can be used. Indeed, a control circuit isolated from the mains then has to be used (a power supply with a transformer or using an optocoupler). This prevents the use of the same control circuit to control several switches.
  • the present invention aims at overcoming the disadvantages of known normally-on bidirectional switches.
  • the present invention more specifically aims at providing a novel normally-on bidirectional switch which has low power dissipation in the off state and which requires relatively few components.
  • the present invention also aims at having the bidirectional switch use a control switch referenced to the a.c. supply voltage.
  • the present invention also aims at providing structures of monolithic components integrating at least the thyristors of the circuit according to the present invention.
  • the present invention provides a normally-on bidirectional switch, including, in parallel between two power terminals of the switch, a first cathode-gate thyristor, the anode of which is connected to a first power terminal; a second anode-gate thyristor, the anode of which is connected to a second power terminal; and a resistor in series with a controllable switch, the midpoint of this series association being connected to the respective gates of the two thyristors.
  • the thyristors are chosen to have a low triggering current.
  • a protection diode is interposed between the cathode of the anode-gate thyristor and the first power terminal.
  • the resistor is of high value, chosen according to the respective triggering currents of the thyristors.
  • At least both thyristors are integrated.
  • At least both thyristors, the protection diode, and the resistor are integrated within the same circuit.
  • the resistor is non-linear.
  • the present invention also provides a monolithic semiconductor component integrating the two thyristors of the above-mentioned bidirectional switch in which the thyristors are implemented in vertical form in a portion of a lightly-doped N-type substrate surrounded with a P-type isolating wall.
  • the anode of the anode-gate thyristor and the cathode of the cathode-gate thyristor are arranged on the rear surface side of the component coated with a single metallization, the gate of the cathode-gate thyristor is taken on the isolating wall on the front surface side of the component, and the anode gate of the anode-gate thyristor is formed of a ring surrounding a P-type well in which is formed a cathode layer of the component, on the front surface side.
  • the anode of the cathode-gate thyristor and the cathode of the anode-gate thyristor are arranged on the rear surface side of the component coated with a single metallization
  • the gate of the anode-gate thyristor is formed of a ring surrounding a P-type well forming the anode region of the thyristor
  • the gate metallization M of the cathode-gate thyristor is formed on the upper surface side of the substrate on a P-type well containing an N-type region forming the cathode of the cathode-gate thyristor.
  • the anode of the cathode-gate thyristor and the cathode of the anode-gate thyristor are arranged on the rear surface side of the component and coated with a single metallization
  • the gate of the anode-gate thyristor is of remote gate type and is formed of an N-type region formed in the anode well of the anode-gate thyristor, whereby the anode-gate thyristor is protected against overvoltages resulting from high reverse voltages
  • the gate metallization M of the cathode-gate thyristor is formed on the upper surface side of the substrate on a P-type well containing an N-type region forming the cathode of the cathode-gate thyristor.
  • the component includes a lightly-doped P-type region extending between the P-type well in which the cathode region of the cathode-gate thyristor is formed and the isolating wall, whereby this region forms a resistor arranged between the gate of the anode- and cathode-gate thyristors and the anode of the cathode-gate thyristor and the cathode of the anode-gate thyristor.
  • FIGS. 1 and 2 previously described, are meant to show the state of the art and the problem to solve;
  • FIG. 3 shows an embodiment of a normally-on bidirectional switch according to the present invention.
  • FIGS. 4 to 7 show various embodiments of monolithic assemblies incorporating at least the two thyristors of the circuit according to the present invention.
  • FIG. 3 shows an embodiment of a normally-on bidirectional switch 3 according to the present invention.
  • Switch 3 is meant, as with a conventional switch, to be connected in series with a load 35 (Q) between two terminals 36 , 37 of application of an a.c. supply voltage Vac, for example, the mains voltage.
  • Switch 3 includes, as previously, two power terminals 32 , 33 , meant to be connected, respectively, to a terminal of application of the a.c. supply voltage and to a terminal of load 35 .
  • switch 3 includes, in parallel between power terminals 32 and 33 , a first cathode-gate thyristor 39 , the anode of which is connected to a first power terminal (for example, 33 ), and a second anode-gate thyristor 40 , the anode of which is connected to the other power terminal (for example, 32 ).
  • the respective gates Gc and Ga of thyristors 39 and 40 are connected, via a same resistor R 3 , to terminal 33 and, via a control switch 34 , to terminal 32 .
  • Control switch 34 may be a manual control switch or a switch operated by a control signal CTRL coming from an appropriate circuit.
  • switch 34 may be a bipolar transistor associated with an optocoupler.
  • Switch 34 is assumed to be open. At the beginning of a positive halfwave of a.c. supply voltage Vac, a current flows, from terminal 33 , through resistor R 3 , then from gate Gc to the cathode of thyristor 39 . When this current becomes higher than the triggering current of thyristor 39 , the latter triggers. Thyristor 39 turns off at the end of the halfwave as the current flowing therethrough disappears. At the beginning of a negative halfwave, a current flows, from terminal 32 , from the anode to the gate Ga of thyristor 40 , then through resistor R 3 . When this current becomes higher than the triggering current of thyristor 40 , the latter turns on.
  • control switch 34 short-circuits gate Gc and the cathode of thyristor 39 , and gate Ga and the anode of thyristor 40 . Accordingly, both thyristors 39 and 40 are maintained in the off state.
  • a protection diode 41 is interposed between the cathode of thyristor 40 and terminal 33 .
  • the function of this diode 41 is to protect thyristor 40 when it is reverse-biased.
  • the usefulness of diode 41 is linked to the conventional structure of the anode-gate thyristor and, especially, to the breakdown voltage of the junction between the gate and the cathode of thyristor 40 which, as will be seen hereafter, is a junction with a low reverse breakdown voltage. In the absence of diode 41 , the voltage would not be withstood when +V is applied on terminal 33 and ⁇ V is applied on terminal 32 .
  • An advantage of the present invention is that by exclusively using thyristors as the active power switching components, advantage is taken from the high sensitivity of thyristors with respect to triacs.
  • switch 34 is now referenced to the a.c. supply voltage.
  • Another advantage of the present invention is that it reduces or minimizes the number of high voltage components required with respect to a conventional switch such as illustrated by FIG. 2 .
  • Another advantage of the present invention is that the low triggering current of the switch allows the use of low voltage switches due to the high value of resistor R 3 .
  • a low voltage bipolar or MOS transistor, a microrelay, an optocoupler, etc. may be used.
  • thyristors having gate currents on the order of 100 ⁇ A may be used.
  • the resistor can have a value on the order of 200 k ⁇ , which results in a dissipated power on the order of 100 mW when switch 34 is closed.
  • resistor R 3 may be a resistor which is not linear in voltage (with a positive coefficient), that is, the value of which increases with the voltage thereacross.
  • FIG. 4 shows a first example of a monolithic assembly of the two thyristors 39 and 40 .
  • Both thyristors are vertical thyristors formed in a same lightly-doped N-type silicon substrate 51 .
  • This substrate, or the substrate portion in which are formed the thyristors, is delimited by a heavily-doped P-type isolating wall 52 .
  • the rear surface of the structure comprises a P-type region 54 in which is formed, on the right-hand side of the drawing, a heavily-doped N-type region 55 .
  • the rear surface of the structure is coated with a metallization M 1 .
  • a metallization M 2 is formed on region 59
  • a metallization M 3 is formed on region 57
  • a metallization M 4 is formed on region 60
  • a metallization M 5 is formed on isolating wall 52 , on the right-hand side of the drawing.
  • a cathode-gate thyristor 39 the anode of which corresponds to region 57 and the cathode of which corresponds to region 55 has thus been formed.
  • Metallization M 5 corresponds to the gate metallization of thyristor 39 .
  • An anode-gate thyristor 40 the anode of which corresponds to layer 54 and the cathode of which corresponds to region 59 has thus been formed.
  • Metallization M 4 forms the gate metallization of thyristor 40 .
  • the drawing also shows how the thyristors are connected to the components described in relation with FIG. 3 . It should be noted that, in this embodiment, diode 41 is formed outside of the monolithic component.
  • FIG. 5 shows another embodiment of a thyristor assembly according to the present invention.
  • the anode of anode-gate thyristor 40 and the cathode of cathode-gate thyristor 39 are on the upper surface side of the component.
  • a portion of a lightly-doped N-type substrate 51 is defined by a P-type isolating wall 52 .
  • the rear surface comprises a P-type uniform layer 54 .
  • an N-type region 65 formed from the lower surface is located on the left-hand side of the drawing (the side of the anode-gate thyristor).
  • Well 57 of cathode-gate thyristor 39 contains a heavily-doped N-type region 69 while anode well 58 of the anode-gate thyristor contains no N layer.
  • well 58 is surrounded with a heavily-doped N-type region 60 .
  • a metallization M 12 covers anode region 58 of thyristor 40 .
  • a metallization M 13 covers cathode region 69 of thyristor 39 .
  • a metallization M 14 covers N-type ring 60 .
  • the gate of cathode-gate thyristor 39 is formed on a portion of well 57 and is designated with reference M 15 .
  • cathode-gate thyristor is more sensitive, that is, it will trigger for a lower gate current while anode-gate thyristor 40 is slightly less sensitive.
  • FIG. 6 shows another embodiment of the present invention.
  • the layer structure of this embodiment is substantially identical to that of FIG. 5 . Same regions will be referred to by same references and will not be described again.
  • the difference between the structures of FIGS. 6 and 5 is that, in FIG. 6, there no longer is a metallization on ring 60 , this ring then only having a conventional channel stop function.
  • Gate metallization M 24 of the anode-gate thyristor is made on a P-type region 71 formed in anode well 58 of thyristor 40 . A so-called “remote gate” thyristor structure is thus obtained.
  • the triggering of the thyristor is started by a small transistor T 1 formed of regions 71 , 58 , and 51 , connected to thyristor 40 as illustrated in FIG. 6 .
  • the advantage of this structure is that thyristor 40 is then self-protected in case of the presence of a high positive voltage on rear surface metallization M 1 .
  • Diode 41 then is an integral part of the structure and corresponds to the junction between regions 58 and 51 , this diode having, as previously indicated, the function of protecting the anode-gate thyristor from a parasitic reverse triggering between the gate and the anode when the cathode is at a high positive voltage.
  • FIG. 7 shows another embodiment of the present invention.
  • thyristor 40 has been represented by equivalent transistors to better show diode d 41 performing the function of diode 41 of the circuit of FIG. 3 .
  • the structure of FIG. 7 comprises a lightly-doped P-type region 81 which extends between well 57 and isolating wall 52 .
  • region 81 extends between the gate of thyristor 39 and metallization MI common to the anode of thyristor 39 and the cathode of thyristor 40 . It thus performs the function of resistor R 3 of FIG. 3 .
  • all elements of bidirectional switch 3 of FIG. 3 are integrated in the structure of FIG. 7, except for controllable switch 34 .
  • those skilled in the art may implement this switch in the same monolithic component by using the previously indicated techniques.
  • FIG. 7 shows a monolithic structure integrating a normally-on bidirectional switch according to the present invention.
  • Those skilled in the art will know how to choose the dimensions and doping levels of the various layers to reach the objects aimed at in terms of power and triggering sensitivity.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
US09/209,381 1997-12-22 1998-12-10 Normally-on bidirectional switch Expired - Lifetime US6323718B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9711640 1997-09-18
FR9716640A FR2773021B1 (fr) 1997-12-22 1997-12-22 Commutateur bidirectionnel normalement ferme

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EP (1) EP0930711B1 (de)
JP (1) JPH11243190A (de)
DE (1) DE69836069D1 (de)
FR (1) FR2773021B1 (de)

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US6486485B1 (en) * 1999-10-15 2002-11-26 Sharp Kabushiki Kaisha Optocoupler having normally-on driving element
US20050082566A1 (en) * 2003-10-17 2005-04-21 Stmicroelectronics S.A. HF-control SCR switch structure
US20060062032A1 (en) * 2004-08-23 2006-03-23 International Rectifier Corporation Cascoded rectifier
USRE41766E1 (en) * 2004-08-12 2010-09-28 International Rectifier Corporation Self-driven synchronous rectified boost converter with inrush current protection using bidirectional normally on device
US20140355317A1 (en) * 2012-09-03 2014-12-04 Dytech Energy Pte. Ltd. Apparatus and a method for enhancing power output
US20160027907A1 (en) * 2014-07-24 2016-01-28 Stmicroelectronics (Tours) Sas Bidirectional switch
US9455253B2 (en) 2014-07-23 2016-09-27 Stmicroelectronics (Tours) Sas Bidirectional switch
US20170148780A1 (en) * 2015-11-19 2017-05-25 Stmicroelectronics Sa Electronic device, in particular for protection against overvoltages
US11462624B2 (en) 2018-01-05 2022-10-04 Stmicroelectronics (Tours) Sas Semiconductor triode

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FR2800513B1 (fr) * 1999-11-03 2002-03-29 St Microelectronics Sa Detecteur d'etat de composant de puissance
JP2010245377A (ja) * 2009-04-08 2010-10-28 Sanken Electric Co Ltd サイリスタ

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US6486485B1 (en) * 1999-10-15 2002-11-26 Sharp Kabushiki Kaisha Optocoupler having normally-on driving element
US7161191B2 (en) 2003-10-17 2007-01-09 Stmicroelectronics S.A. HF-control SCR switch structure
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USRE41766E1 (en) * 2004-08-12 2010-09-28 International Rectifier Corporation Self-driven synchronous rectified boost converter with inrush current protection using bidirectional normally on device
USRE41770E1 (en) * 2004-08-23 2010-09-28 International Rectifier Corporation Cascoded rectifier
JP4719746B2 (ja) * 2004-08-23 2011-07-06 インターナショナル レクティフィアー コーポレイション カスコード整流器
US7180762B2 (en) * 2004-08-23 2007-02-20 International Rectifier Corporation Cascoded rectifier
JP2008512081A (ja) * 2004-08-23 2008-04-17 インターナショナル レクティファイアー コーポレイション カスコード整流器
KR100877622B1 (ko) * 2004-08-23 2009-01-07 인터내쇼널 렉티파이어 코포레이션 캐스코드 정류기
WO2006033755A2 (en) * 2004-08-23 2006-03-30 International Rectifier Corporation Cascoded rectifier
US20060062032A1 (en) * 2004-08-23 2006-03-23 International Rectifier Corporation Cascoded rectifier
WO2006033755A3 (en) * 2004-08-23 2006-08-03 Int Rectifier Corp Cascoded rectifier
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US9899366B2 (en) * 2015-11-19 2018-02-20 Stmicroelectronics Sa Electronic device, in particular for protection against overvoltages
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DE69836069D1 (de) 2006-11-16
EP0930711A1 (de) 1999-07-21
FR2773021B1 (fr) 2000-03-10
FR2773021A1 (fr) 1999-06-25
JPH11243190A (ja) 1999-09-07
EP0930711B1 (de) 2006-10-04

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