JP4719746B2 - カスコード整流器 - Google Patents
カスコード整流器 Download PDFInfo
- Publication number
- JP4719746B2 JP4719746B2 JP2007530049A JP2007530049A JP4719746B2 JP 4719746 B2 JP4719746 B2 JP 4719746B2 JP 2007530049 A JP2007530049 A JP 2007530049A JP 2007530049 A JP2007530049 A JP 2007530049A JP 4719746 B2 JP4719746 B2 JP 4719746B2
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- Prior art keywords
- terminal
- switching rectifier
- bridge
- rectifier
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
- H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
- Electronic Switches (AREA)
Description
12 第1ソース端子
14 第2ソース端子
16 バイアス電圧ソース
18 第1ゲート端子
22 第2ゲート端子
30 カソード
32 低電圧整流器
36 カソード
38 カソード端子
40 出力ターミナル
46 フルブリッジ整流回路
50、52、54、56 端子
60 IGBT
62 ダイオード
Claims (17)
- ダイオードを含む低電圧構造体と、
双方向の常時導通半導体スイッチを含む高電圧構造体とを備え、
前記ダイオードのカソード端末は、前記双方向スイッチの第1ソース端子に接続されており、
前記ダイオードのアノード端子は、前記双方向スイッチの第1ゲート端子に接続されている高電圧スイッチング整流デバイス。 - 前記ダイオードの前記アノード端子は、信号入力端子にも接続されており、
前記双方向スイッチの第2ソース端子は、信号出力端子に接続されており、
前記双方向スイッチの第2ソース端子と第2ゲート端子の間に、前記第2ソース端子と前記第2ゲート端子を電気的に接続する結合構造が設けられている、請求項1記載のスイッチング整流デバイス。 - 前記低電圧構造体と前記高電圧構造体とは、共通する基板の上に設けられており、かつ集積回路を形成するように、カプセル封入されている、請求項2記載のスイッチング整流デバイス。
- 本デバイスが、ダイオードとして機能するように、前記結合構造は、直接接続となっている、請求項2記載のスイッチング整流デバイス。
- 各々が請求項4記載のスイッチング整流デバイスである、第1、第2、第3および第4スイッチング整流デバイスを備えるブリッジ整流デバイスにおいて、
前記第1スイッチング整流デバイスの入力端子と、前記第4スイッチング整流デバイスの出力端子とは、第1ブリッジ入力端子に結合されており、
前記第2スイッチング整流デバイスの入力端子と、前記第3スイッチング整流デバイスの出力端子とは、第2ブリッジ入力端子に結合されており、
前記第1および第2スイッチング整流デバイスの出力端子は、第1ブリッジ出力端子に接続されており、
前記第3および第4スイッチング整流デバイスの入力端子は、第2ブリッジ出力端子に接続されており、
前記ブリッジ整流デバイスは、前記ブリッジ入力端子にてAC入力電圧を受けるとともに、前記ブリッジ出力端子にて全波整流DC電圧を発生するようになっているブリッジ整流デバイス。 - 前記4つの整流デバイスは、単一集積回路の一部として、共通する基板上に形成されている、請求項5記載のブリッジ整流デバイス。
- 本デバイスが、三端子制御整流器として機能するように、前記結合構造は、外部から制御される電圧ソースとなっている、請求項2記載のスイッチング整流デバイス。
- 請求項4記載の整流デバイスと、該整流デバイスのアノード端子およびカソード端子がアンチパラレル状態に接続されたエミッタ端子およびコレクタ端子を有するIGBTとを組み合わせたデバイス。
- 前記整流デバイスおよびIGBTは、単一集積回路の一部として、共通する基板上に形成されている、請求項8記載のデバイス。
- 前記低電圧構造体は、ショットキーダイオードまたはバリアダイオードである、請求項1記載のスイッチング整流デバイス。
- 各々が請求項1記載のスイッチング整流デバイスである、第1、第2、第3および第4スイッチング整流デバイスを備えるブリッジ整流デバイスにおいて、
前記第1スイッチング整流デバイスの入力端子と前記第4スイッチング整流デバイスの出力端子とは、第1ブリッジ入力端子に結合されており、
前記第2スイッチング整流デバイスのアノード端子と前記第3スイッチング整流デバイスのカソード端子とは、第2ブリッジ入力端子に結合されており、
前記第1および第2スイッチング整流デバイスのカソード端子は、第1ブリッジ出力端子に接続されており、
前記第3および第4スイッチング整流デバイスのアノード端子は、第2ブリッジ出力端子に接続されており、
前記ブリッジ整流デバイスは、前記ブリッジ入力端子にてAC入力電圧を受けるとともに、前記ブリッジ出力端子にて全波整流DC電圧を発生するようになっているブリッジ整流デバイス。 - 前記4つのスイッチング整流デバイスは、単一集積回路の一部として、共通する基板上に形成されている、請求項11記載のブリッジ整流デバイス。
- 1つのダイオードとして機能するように構成されている、請求項1記載のスイッチング整流デバイス。
- 三端子制御整流器として機能するように構成されている、請求項1記載のスイッチング整流デバイス。
- 請求項1記載の整流デバイスと、該整流デバイスのアノード端子およびカソード端子に、アンチパラレル状態にエミッタ端子およびコレクタ端子が接続されたIGBTとを組み合わせたデバイス。
- 前記整流デバイスおよびIGBTは、単一集積回路の一部として、共通する基板上に形成されている、請求項15記載のデバイス。
- フルブリッジ整流器として機能するように構成されている、請求項1記載のスイッチング整流デバイスを4つ備えるデバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60358904P | 2004-08-23 | 2004-08-23 | |
US60/603,589 | 2004-08-23 | ||
US11/207,214 US7180762B2 (en) | 2004-08-23 | 2005-08-19 | Cascoded rectifier |
US11/207,214 | 2005-08-19 | ||
PCT/US2005/029953 WO2006033755A2 (en) | 2004-08-23 | 2005-08-23 | Cascoded rectifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008512081A JP2008512081A (ja) | 2008-04-17 |
JP4719746B2 true JP4719746B2 (ja) | 2011-07-06 |
Family
ID=36073774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007530049A Active JP4719746B2 (ja) | 2004-08-23 | 2005-08-23 | カスコード整流器 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7180762B2 (ja) |
JP (1) | JP4719746B2 (ja) |
KR (1) | KR100877622B1 (ja) |
CN (1) | CN100481697C (ja) |
DE (1) | DE112005002029B4 (ja) |
TW (1) | TWI314384B (ja) |
WO (1) | WO2006033755A2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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USRE45989E1 (en) | 2006-11-20 | 2016-04-26 | Panasonic Corporation | Semiconductor device and method for driving the same |
US8957642B2 (en) * | 2008-05-06 | 2015-02-17 | International Rectifier Corporation | Enhancement mode III-nitride switch with increased efficiency and operating frequency |
US8711593B2 (en) * | 2008-08-20 | 2014-04-29 | ConvenientPower HK Ltd. | Generalized AC-DC synchronous rectification techniques for single- and multi-phase systems |
US8942018B2 (en) * | 2008-08-20 | 2015-01-27 | ConvenientPower HK Ltd. | Single-phase self-driven full-bridge synchronous rectification |
US8084783B2 (en) * | 2008-11-10 | 2011-12-27 | International Rectifier Corporation | GaN-based device cascoded with an integrated FET/Schottky diode device |
US20130015501A1 (en) * | 2011-07-11 | 2013-01-17 | International Rectifier Corporation | Nested Composite Diode |
US8598937B2 (en) * | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
US9129838B2 (en) * | 2011-11-24 | 2015-09-08 | Sharp Kabushiki Kaisha | Semiconductor device and electronic apparatus |
US9479048B2 (en) | 2013-09-09 | 2016-10-25 | Aerovironment, Inc. | Resonant isolated active power factor correction (PFC) rectifier |
US9231493B1 (en) | 2014-08-11 | 2016-01-05 | Infineon Technologies Austria Ag | Rectifier with auxiliary voltage output |
US9621069B2 (en) | 2014-08-11 | 2017-04-11 | Infineon Technologies Austria Ag | Rectifier with voltage detection and controllable output path |
JP6531026B2 (ja) * | 2015-10-20 | 2019-06-12 | 株式会社 日立パワーデバイス | 電力変換装置 |
US9991776B2 (en) | 2015-12-16 | 2018-06-05 | Semiconductor Components Industries, Llc | Switched mode power supply converter |
CN109194156A (zh) * | 2018-11-06 | 2019-01-11 | 北京金自天正智能控制股份有限公司 | 一种紧凑型单相或三相励磁功率单元 |
KR102387123B1 (ko) * | 2020-07-21 | 2022-04-15 | 한국항공우주연구원 | Ac-dc 컨버터 회로 시스템, 및 ac-dc 컨버터 회로 시스템의 동작 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4473757A (en) * | 1981-12-08 | 1984-09-25 | Intersil, Inc. | Circuit means for converting a bipolar input to a unipolar output |
US5422563A (en) * | 1993-07-22 | 1995-06-06 | Massachusetts Institute Of Technology | Bootstrapped current and voltage reference circuits utilizing an N-type negative resistance device |
US6323718B1 (en) * | 1997-12-22 | 2001-11-27 | Stmicroelectronics S.A. | Normally-on bidirectional switch |
Family Cites Families (7)
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US4242595A (en) * | 1978-07-27 | 1980-12-30 | University Of Southern California | Tunnel diode load for ultra-fast low power switching circuits |
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
US4900953A (en) * | 1987-03-11 | 1990-02-13 | Fujitsu Limited | Logic circuit employing field effect transistor having junction with rectifying characteristic between gate and source |
US5008565A (en) * | 1990-01-23 | 1991-04-16 | Triquint Semiconductor, Inc. | High-impedance FET circuit |
US5258640A (en) * | 1992-09-02 | 1993-11-02 | International Business Machines Corporation | Gate controlled Schottky barrier diode |
US6483369B1 (en) * | 2001-10-02 | 2002-11-19 | Technical Witts Inc. | Composite mosfet cascode switches for power converters |
JP4092246B2 (ja) * | 2002-05-27 | 2008-05-28 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | パワースイッチデバイス |
-
2005
- 2005-08-19 US US11/207,214 patent/US7180762B2/en not_active Ceased
- 2005-08-22 TW TW094128629A patent/TWI314384B/zh not_active IP Right Cessation
- 2005-08-23 KR KR1020077004432A patent/KR100877622B1/ko active IP Right Grant
- 2005-08-23 DE DE112005002029T patent/DE112005002029B4/de not_active Expired - Fee Related
- 2005-08-23 WO PCT/US2005/029953 patent/WO2006033755A2/en active Application Filing
- 2005-08-23 CN CNB2005800305422A patent/CN100481697C/zh not_active Expired - Fee Related
- 2005-08-23 JP JP2007530049A patent/JP4719746B2/ja active Active
-
2009
- 2009-02-19 US US12/388,833 patent/USRE41770E1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4473757A (en) * | 1981-12-08 | 1984-09-25 | Intersil, Inc. | Circuit means for converting a bipolar input to a unipolar output |
US5422563A (en) * | 1993-07-22 | 1995-06-06 | Massachusetts Institute Of Technology | Bootstrapped current and voltage reference circuits utilizing an N-type negative resistance device |
US6323718B1 (en) * | 1997-12-22 | 2001-11-27 | Stmicroelectronics S.A. | Normally-on bidirectional switch |
Also Published As
Publication number | Publication date |
---|---|
US7180762B2 (en) | 2007-02-20 |
TWI314384B (en) | 2009-09-01 |
DE112005002029T5 (de) | 2007-07-05 |
JP2008512081A (ja) | 2008-04-17 |
US20060062032A1 (en) | 2006-03-23 |
DE112005002029B4 (de) | 2012-07-12 |
WO2006033755A3 (en) | 2006-08-03 |
USRE41770E1 (en) | 2010-09-28 |
CN101040425A (zh) | 2007-09-19 |
CN100481697C (zh) | 2009-04-22 |
KR20070037651A (ko) | 2007-04-05 |
TW200627776A (en) | 2006-08-01 |
KR100877622B1 (ko) | 2009-01-07 |
WO2006033755A2 (en) | 2006-03-30 |
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