USRE41770E1 - Cascoded rectifier - Google Patents

Cascoded rectifier Download PDF

Info

Publication number
USRE41770E1
USRE41770E1 US12/388,833 US38883309A USRE41770E US RE41770 E1 USRE41770 E1 US RE41770E1 US 38883309 A US38883309 A US 38883309A US RE41770 E USRE41770 E US RE41770E
Authority
US
United States
Prior art keywords
terminal
rectifier
bridge
diode
switched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US12/388,833
Inventor
Marco Soldano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies North America Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority to US12/388,833 priority Critical patent/USRE41770E1/en
Application granted granted Critical
Publication of USRE41770E1 publication Critical patent/USRE41770E1/en
Assigned to Infineon Technologies Americas Corp. reassignment Infineon Technologies Americas Corp. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: INTERNATIONAL RECTIFIER CORPORATION
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to high voltage rectifier devices, and more particularly to such devices which exhibit significantly lower forward conduction and switching losses than conventional devices.
  • Bipolar rectifiers are conventionally used for high voltage applications (e.g., above 200-300V). These rectifiers are typically realized with a p-i-n structure in order to provide an adequate reverse breakdown capability. However, the intrinsic region must exhibit high resistivity for the device to function properly. This results in a high voltage drop in the forward conduction mode, and in many high current applications, is the main source of power losses.
  • rectifiers can be replaced with switches controlled with dedicated control circuitry. These rectifiers are called synchronous rectifier circuits and offer the advantage of reducing forward conduction losses and to provide fast switching, but this requires use of active circuitry to detect the required status and operate the switch itself.
  • the present invention meets the above-stated need by providing a composite device including a normally on bidirectional switch connected in a cascode configuration with a low voltage diode such as a Schottky diode or the like.
  • the two parts are fabricated on a common substrate and encapsulated to form an IC with a minimum number of pins, for example, as few as 2 pins.
  • Other components can be included in the IC to provide additional functionality.
  • Bidirectional switches of this kind are capable of conducting and blocking current in both directions. They are typically implemented using two control pins or gates to control current flow between two source terminals. The device is normally on: a negative bias must be applied between at least one of the respective gate-source pairs for the device to shut off. If one of the gates is reverse biased, there will be no current flow between the source terminals.
  • a device of this type is shown, for example, in U.S. Pat. No. 4,608,590.
  • the low voltage diode is preferably connected between one of the gate-source pairs so that the composite device is self driven.
  • the other gate-source pair can be held at zero volts by connecting the terminals together, or an external control signal can be used to provide a three terminal device which functions in the manner of and SCR (Silicon Controlled Rectifier) or Thyristor.
  • multiple devices can be combined: e.g., four of the devices can be fabricated as an IC to form a rectifier bridge, or one of the devices can be integrated with an insulated gate bipolar transistor (IGBT) in an antiparallel relationship to provide to provide freewheeling or reverse current protection function for the IGBT.
  • IGBT insulated gate bipolar transistor
  • the above-mentioned related application Ser. No. 11/202,134 illustrates the use of the rectifier device in a high voltage boost converter. Other applications of the device will be readily apparent to those skilled in the art from the description which follows.
  • the invention provides significantly reduced conduction losses compared to conventional high voltage rectifiers, and at the same time, provides dramatically improved switching speed since no recovery current is present.
  • the only reverse current will be the capacitive displacement current of the small Schottky rectifier, which is typically several order of magnitude smaller than in bipolar high voltage rectifiers.
  • FIG. 1 illustrates a bidirectional normally on switch which may be used as a component of the devices according to this invention.
  • FIG. 2 shows an exemplary implementation of the invention to provide the function of a diode rectifier.
  • FIG. 3 shows an exemplary implementation of the invention to provide a three terminal controlled rectifier.
  • FIG. 4A illustrates a conventional full bridge rectifier topology
  • FIG. 4B shows an implementation of the present invention to provide the functionality of the bridge rectifier of FIG. 4 A.
  • FIG. 5A shows an IGBT with a conventional diode connected in an anti-parallel configuration between the emitter and collector terminals
  • FIG. 5B shows the implementation of the circuit of FIG. 5A employing a rectifier device according to the present invention.
  • FIG. 1 illustrates a bidirectional normally conducting semiconductor switch which can be used as one of the components of the devices according to the present invention.
  • the switch generally designated at 10 , is a known device which is capable of conducting and blocking current in both directions between a first source terminal 12 and a second source terminal 14 .
  • Control is provided by a bias voltage source 16 connected between a first gate terminal 18 and source terminal 12 and a second voltage source 30 connected between a second gate terminal 22 and source terminal 14 .
  • a device of this kind is characterized by the fact that when a negative bias below a programmed threshold is applied across either one or both of the gate-source pairs, the device will be off, i.e., will sustain a voltage between the source terminals. Only if the voltage at both gates is zero, can current flow between the two source terminals.
  • Devices of this kind are commercially available from several sources as discrete elements, and IC fabrication techniques for manufacturing these devices are well known.
  • FIG. 2 shows how switch 10 of FIG. 1 can be used to form a high voltage rectifier.
  • the illustrated device generally denoted 30 , includes switch 10 , and a low voltage rectifier 32 , such as a Schottky or barrier rectifier, having its anode 34 connected to gate terminal 18 , and its cathode 36 connected to source terminal 12 .
  • switch 10 and diode 32 are fabricated on a common substrate, and encapsulated to form an integrated circuit with externally accessible “anode” and “cathode” terminals 38 and 40 .
  • source terminal 14 is directly connected to gate terminal 22 , either by an external jumper, or by a direct internal connection.
  • diode 32 When V AK becomes negative, diode 32 will be reverse biased, and will develop a voltage equal or greater than the gate threshold for switch 10 , which will then turn off and sustain the entire V AK voltage.
  • FIG. 3 illustrates how device 30 can be modified to provide a three-terminal controlled rectifier.
  • a device generally denoted at 30 ′, utilizes the second gate-source pair 22 - 14 as a control to trigger the device on and off, so that the function of a Thyristor or SCR can be emulated but without the latching mechanism typical of these devices.
  • the switch can be enabled independently from the voltage applied to its power pins.
  • the direct connection between source 14 and gate 22 is replaced by an external control signal source, represented by a voltage source 42 which varies between zero and a suitable negative value.
  • the control signal voltage When the control signal voltage is zero, the state of switch 10 is determined only by V AK . When the control signal voltage is negative, switch 10 shuts down, independent of V AK .
  • Device 30 ′ therefore functions similar to an SCR or thyristor.
  • FIG. 4A shows at 46 , a conventional full bridge rectifier circuit having an AC input 48 connected between terminals 50 and 52 and positive and negative DC output voltages provided at terminals 54 and 56 .
  • FIG. 4B illustrates the realization of such a bridge circuit 46 ′ using rectifier devices 30 a- 30 d of the kind illustrated in FIG. 2 .
  • the AC voltage source is connected to terminals 50 between rectifier devices 30 a and 30 d and to terminal 52 between rectifier devices 30 b and 30 c.
  • the outputs 54 and 56 are respectively provided between rectifier devices 30 a and 30 b, and 30 c and 30 d.
  • the configuration shown provides the functionality of a full bridge rectifier circuit with the high voltage, low conduction loss, and fast switching provided by rectifier device 30 .
  • FIG. 5A illustrates a conventional IGBT 60 with a diode 62 connected in anti-parallel relationship.
  • FIG. 5B illustrates the same circuit in which diode 62 is replaced by rectifier device 30 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Electronic Switches (AREA)

Abstract

A high voltage rectifier device exhibiting low forward resistance and fast switching time formed of a high voltage structure connected in a cascode configuration with a low voltage structure. The high voltage structure is a bidirectional normally on semiconductor switch have two pairs of gate and source terminals which shuts off if either of the gate terminals is reverse biased. The low voltage structure is a diode, preferably a Schottky or barrier diode. The device is advantageously formed as an integrated circuit. With one of the terminal pairs of the switch clamped to zero volts, the device behaves as a diode, or the second terminal pair can be employed to provide the functions of a three terminal controlled rectifier. Among other possible applications are integrated circuits using four of the devices as a bridge rectifier, and as an anti-parallel diode for connection with an IGBT.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based on and claims priority to U.S. Provisional Application No. 60/603,589, filed Aug. 23, 2004, the entire disclosure of which is incorporated herein by reference.
This application is also related to U.S. patent application Ser. No. 11/202,134, filed Aug. 11, 2005 in the name of Marco Soldano, entitled SELF-DRIVEN SYNCHRONOUS RECTIFIED BOOST CONVERTER WITH INRUSH CURRENT PROTECTION USING BIDIRECTIONAL NORMALLY ON DEVICE, the entire disclosure of which is also incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Technical Field of the Invention
The present invention relates to high voltage rectifier devices, and more particularly to such devices which exhibit significantly lower forward conduction and switching losses than conventional devices.
2. Relevant Art
Bipolar rectifiers are conventionally used for high voltage applications (e.g., above 200-300V). These rectifiers are typically realized with a p-i-n structure in order to provide an adequate reverse breakdown capability. However, the intrinsic region must exhibit high resistivity for the device to function properly. This results in a high voltage drop in the forward conduction mode, and in many high current applications, is the main source of power losses.
In some cases rectifiers can be replaced with switches controlled with dedicated control circuitry. These rectifiers are called synchronous rectifier circuits and offer the advantage of reducing forward conduction losses and to provide fast switching, but this requires use of active circuitry to detect the required status and operate the switch itself.
One approach which has been tried in an effort to reduce forward resistance in high voltage switches is illustrated in U.S. Pat. No. 6,483,369 for COMPOSITE MOSFET CASCODE SWITCHES FOR POWER CONVERTERS. In the patented device, a composite structure is formed of a large die size high voltage MOSFET arranged in cascode with a low voltage small die size MOSFET for the purpose of improving efficiency and switching speed. However, this approach suffers from the disadvantage that it requires additional control circuitry to perform synchronous rectifier function.
Accordingly, there is still a need for a simple, low loss, fast switching rectifier device for use at high voltages.
SUMMARY OF THE INVENTION
The present invention meets the above-stated need by providing a composite device including a normally on bidirectional switch connected in a cascode configuration with a low voltage diode such as a Schottky diode or the like. Preferably, the two parts are fabricated on a common substrate and encapsulated to form an IC with a minimum number of pins, for example, as few as 2 pins. Other components can be included in the IC to provide additional functionality.
Bidirectional switches of this kind are capable of conducting and blocking current in both directions. They are typically implemented using two control pins or gates to control current flow between two source terminals. The device is normally on: a negative bias must be applied between at least one of the respective gate-source pairs for the device to shut off. If one of the gates is reverse biased, there will be no current flow between the source terminals. A device of this type is shown, for example, in U.S. Pat. No. 4,608,590.
The low voltage diode is preferably connected between one of the gate-source pairs so that the composite device is self driven. The other gate-source pair can be held at zero volts by connecting the terminals together, or an external control signal can be used to provide a three terminal device which functions in the manner of and SCR (Silicon Controlled Rectifier) or Thyristor. Additionally, multiple devices can be combined: e.g., four of the devices can be fabricated as an IC to form a rectifier bridge, or one of the devices can be integrated with an insulated gate bipolar transistor (IGBT) in an antiparallel relationship to provide to provide freewheeling or reverse current protection function for the IGBT. Also, the above-mentioned related application Ser. No. 11/202,134 illustrates the use of the rectifier device in a high voltage boost converter. Other applications of the device will be readily apparent to those skilled in the art from the description which follows.
The invention provides significantly reduced conduction losses compared to conventional high voltage rectifiers, and at the same time, provides dramatically improved switching speed since no recovery current is present. The only reverse current will be the capacitive displacement current of the small Schottky rectifier, which is typically several order of magnitude smaller than in bipolar high voltage rectifiers.
It is accordingly an object of the present invention to provide a high voltage rectifier structure with very low forward conduction losses and fast switching time.
It is a further object of the invention to provide such a rectifier device which is formed of a low voltage diode and a bidirectional normally on switch connected in a cascode configuration.
It is another object of the invention to employ such a device in various circuit applications, including, but not limited to, a two terminal device that functions as a rectifier, a three terminal device that functions in the manner of an SCR or thyristor, a full-bridge rectifier, or in an anti-parallel configuration with an IGBT.
It is an additional object of the invention to provide such devices as integrated circuits.
Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWING(S)
FIG. 1 illustrates a bidirectional normally on switch which may be used as a component of the devices according to this invention.
FIG. 2 shows an exemplary implementation of the invention to provide the function of a diode rectifier.
FIG. 3 shows an exemplary implementation of the invention to provide a three terminal controlled rectifier.
FIG. 4A illustrates a conventional full bridge rectifier topology, and FIG. 4B shows an implementation of the present invention to provide the functionality of the bridge rectifier of FIG. 4A.
FIG. 5A shows an IGBT with a conventional diode connected in an anti-parallel configuration between the emitter and collector terminals, and FIG. 5B shows the implementation of the circuit of FIG. 5A employing a rectifier device according to the present invention.
Throughout the drawings, like parts are designated by the same reference number.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION
FIG. 1 illustrates a bidirectional normally conducting semiconductor switch which can be used as one of the components of the devices according to the present invention. The switch, generally designated at 10, is a known device which is capable of conducting and blocking current in both directions between a first source terminal 12 and a second source terminal 14. Control is provided by a bias voltage source 16 connected between a first gate terminal 18 and source terminal 12 and a second voltage source 30 connected between a second gate terminal 22 and source terminal 14. A device of this kind is characterized by the fact that when a negative bias below a programmed threshold is applied across either one or both of the gate-source pairs, the device will be off, i.e., will sustain a voltage between the source terminals. Only if the voltage at both gates is zero, can current flow between the two source terminals. Devices of this kind are commercially available from several sources as discrete elements, and IC fabrication techniques for manufacturing these devices are well known.
FIG. 2 shows how switch 10 of FIG. 1 can be used to form a high voltage rectifier. The illustrated device, generally denoted 30, includes switch 10, and a low voltage rectifier 32, such as a Schottky or barrier rectifier, having its anode 34 connected to gate terminal 18, and its cathode 36 connected to source terminal 12. Advantageously, switch 10 and diode 32 are fabricated on a common substrate, and encapsulated to form an integrated circuit with externally accessible “anode” and “cathode” terminals 38 and 40. To permit device 30 to function as a diode, source terminal 14 is directly connected to gate terminal 22, either by an external jumper, or by a direct internal connection.
In device 30, when the voltage between the input terminal 38 and output terminal 40 is positive, current will flow in low voltage diode 32 and the bias voltage VGS1 at gate terminal 18 will equal the forward voltage drop of diode 32. Since this will be a positive voltage, it will keep device 10 in the on state.
When VAK becomes negative, diode 32 will be reverse biased, and will develop a voltage equal or greater than the gate threshold for switch 10, which will then turn off and sustain the entire VAK voltage.
FIG. 3 illustrates how device 30 can be modified to provide a three-terminal controlled rectifier. Such a device, generally denoted at 30′, utilizes the second gate-source pair 22-14 as a control to trigger the device on and off, so that the function of a Thyristor or SCR can be emulated but without the latching mechanism typical of these devices. In other words the switch can be enabled independently from the voltage applied to its power pins. Here, the direct connection between source 14 and gate 22 is replaced by an external control signal source, represented by a voltage source 42 which varies between zero and a suitable negative value. When the control signal voltage is zero, the state of switch 10 is determined only by VAK. When the control signal voltage is negative, switch 10 shuts down, independent of VAK. Device 30′ therefore functions similar to an SCR or thyristor.
FIG. 4A shows at 46, a conventional full bridge rectifier circuit having an AC input 48 connected between terminals 50 and 52 and positive and negative DC output voltages provided at terminals 54 and 56. FIG. 4B illustrates the realization of such a bridge circuit 46′ using rectifier devices 30a-30d of the kind illustrated in FIG. 2.
Here, the AC voltage source is connected to terminals 50 between rectifier devices 30a and 30d and to terminal 52 between rectifier devices 30b and 30c. The outputs 54 and 56 are respectively provided between rectifier devices 30a and 30b, and 30c and 30d. The configuration shown provides the functionality of a full bridge rectifier circuit with the high voltage, low conduction loss, and fast switching provided by rectifier device 30.
FIG. 5A illustrates a conventional IGBT 60 with a diode 62 connected in anti-parallel relationship. FIG. 5B illustrates the same circuit in which diode 62 is replaced by rectifier device 30.
Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is intended, therefore, that the invention not be limited not by the specific disclosure herein, but that it be given the full scope permitted according to the appended claims.

Claims (19)

1. A switched high voltage rectifier device including:
a low voltage structure comprised of a diode;
a high voltage structure comprised of a bidirectional normally on semiconductor switch, wherein the high and low voltage structures are connected in a cascode conflauration wherein:
a cathode terminal of the diode is connected to a first source terminal of the bidirectional switch;
an anode terminal of the diode is connected to a first gate terminal of the bidirectional switch, and to a signal input terminal; and
a second source terminal of the bidirectional switch is connected to a signal output terminal, and
a coupling structure is provided between the second source terminal and a second gate terminal of the bidirectional switch.
2. A device according to claim 1, wherein the low and high voltage structures are fabricated on a common substrate and encapsulated to form an integrated circuit.
3. A device comprising four rectifier devices according to claim 1, constructed and configured to function as a full bridge rectifier.
4. A device according to claim 1, wherein the coupling structure is an externally controlled voltage source, whereby the device functions as a three terminal controlled rectifier.
5. A device according to claim 1, wherein the low voltage structure is a Schottky or a barrier diode.
6. A device according to claim 1, wherein the device is constructed and configured to function as a diode.
7. A device according to claim 1, wherein the device is constructed and configured to function as a three terminal controlled rectifier.
8. A device according to claim 1, wherein the coupling structure is a direct connection, whereby the device functions as a diode.
9. A bridge rectifier device comprising first, second, third, and fourth switched rectifier devices as described in claim 8, wherein:
the input terminal of the first switched rectifier and the output terminal of the fourth switched rectifier are connected to a first bridge input terminal;
the input terminal of the second switched rectifier and the output terminal of the third switched rectifier are connected to a second bridge input terminal;
the output terminal of the first and second switched rectifiers are connected to a first bridge output terminal;
the input terminals of the third and fourth switched rectifiers are connected to a second bridge output terminal; and
the bridge rectifier device is adapted to receive an AC input voltage at the bridge input terminals, and to provide a full wave rectified DC voltage at the bridge output terminals.
10. A bridge rectifier device according to claim 9, wherein the four rectifier devices are formed on a common substrate as part of a single integrated circuit.
11. A device according to claim 9, wherein the coupling structure is a direct connection, whereby the device functions as a diode.
12. A device according to claim 8, in combination with an IGBT, the IGBT having emiffer and collector terminals thereof connected to the anode and cathode terminals of the rectifier device in an antiparallel relationship.
13. A combined device according to claim 12, wherein the rectifier device and the IGBT are formed on a common substrate as part of a single integrated circuit.
14. A bridge rectifier device comprising first, second, third, and fourth switched rectifier devices as described in claim 1, wherein:
an anode terminal of the first switched rectifier and a cathode terminal of the fourth switched rectifier are connected to a first bridge input terminal;
an anode terminal of the second switched rectifier and a cathode terminal of the third switched rectifier are connected to a second bridge input terminal;
cathode terminals of the first and second switched rectifiers are connected to a first bridge output terminal;
anode terminals of the third and fourth switched rectifiers are connected to a second bridge output terminal; and
the bridge rectifier device is adapted to receive an AC input voltage at the bridge input terminals, and to provide a full wave rectified DC voltage at the bridge output terminals.
15. A bridge rectifier device according to claim 14, wherein the four rectifier devices are formed on a common substrate as part of a single integrated circuit.
16. A circuit comprising a switched high voltage rectifier device including:
a low voltane voltage structure comprised of a diode;
a high voltage structure comprised of a bidirectional normally on semiconductor switch,
wherein the high and low voltage structures are connected in a cascode configuration:
further comprising an IGBT, the IGBT having emitter and collector terminals thereof connected to anode and cathode terminals of the rectifier device in an antiparallel relationship.
17. A circuit according to claim 16, wherein the rectifier device and the IGBT are formed on a common substrate as part of a single integrated circuit.
18. A switched high voltage rectifier device comprising:
a low voltage structure comprised of a diode;
a high voltage structure comprised of a normally on semiconductor switch,
wherein the high and low voltage structures are connected in a cascode configuration, further wherein
a cathode terminal of the diode is connected to a first source terminal of the switch;
an anode terminal of the diode is connected to a gate terminal of the switch, and to a signal input terminal; and
a second source terminal of the switch is connected to a signal output terminal.
19. A device according to claim 18, wherein:
the switch is bidirectional and the gate terminal comprises a first gate terminal and there is further provided a second gate terminal;
the anode terminal of the diode is connected to the first gate terminal; and
a coupling structure is provided between the second source terminal and the second gate terminal of the bidirectional switch.
US12/388,833 2004-08-23 2009-02-19 Cascoded rectifier Active USRE41770E1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/388,833 USRE41770E1 (en) 2004-08-23 2009-02-19 Cascoded rectifier

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60358904P 2004-08-23 2004-08-23
US11/207,214 US7180762B2 (en) 2004-08-23 2005-08-19 Cascoded rectifier
US12/388,833 USRE41770E1 (en) 2004-08-23 2009-02-19 Cascoded rectifier

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/207,214 Reissue US7180762B2 (en) 2004-08-23 2005-08-19 Cascoded rectifier

Publications (1)

Publication Number Publication Date
USRE41770E1 true USRE41770E1 (en) 2010-09-28

Family

ID=36073774

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/207,214 Ceased US7180762B2 (en) 2004-08-23 2005-08-19 Cascoded rectifier
US12/388,833 Active USRE41770E1 (en) 2004-08-23 2009-02-19 Cascoded rectifier

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/207,214 Ceased US7180762B2 (en) 2004-08-23 2005-08-19 Cascoded rectifier

Country Status (7)

Country Link
US (2) US7180762B2 (en)
JP (1) JP4719746B2 (en)
KR (1) KR100877622B1 (en)
CN (1) CN100481697C (en)
DE (1) DE112005002029B4 (en)
TW (1) TWI314384B (en)
WO (1) WO2006033755A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101976684B (en) 2006-11-20 2014-02-12 松下电器产业株式会社 Semiconductor device and its drive method
US8957642B2 (en) * 2008-05-06 2015-02-17 International Rectifier Corporation Enhancement mode III-nitride switch with increased efficiency and operating frequency
US8942018B2 (en) * 2008-08-20 2015-01-27 ConvenientPower HK Ltd. Single-phase self-driven full-bridge synchronous rectification
US8711593B2 (en) * 2008-08-20 2014-04-29 ConvenientPower HK Ltd. Generalized AC-DC synchronous rectification techniques for single- and multi-phase systems
US8084783B2 (en) * 2008-11-10 2011-12-27 International Rectifier Corporation GaN-based device cascoded with an integrated FET/Schottky diode device
US20130015501A1 (en) * 2011-07-11 2013-01-17 International Rectifier Corporation Nested Composite Diode
US8598937B2 (en) * 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
CN103946978B (en) * 2011-11-24 2017-03-01 夏普株式会社 Semiconductor device and electronic equipment
WO2015035397A1 (en) * 2013-09-09 2015-03-12 Aerovironment, Inc. Resonant isolated active pfc rectifier
US9621069B2 (en) 2014-08-11 2017-04-11 Infineon Technologies Austria Ag Rectifier with voltage detection and controllable output path
US9231493B1 (en) 2014-08-11 2016-01-05 Infineon Technologies Austria Ag Rectifier with auxiliary voltage output
JP6531026B2 (en) * 2015-10-20 2019-06-12 株式会社 日立パワーデバイス Power converter
US9991776B2 (en) 2015-12-16 2018-06-05 Semiconductor Components Industries, Llc Switched mode power supply converter
CN109194156A (en) * 2018-11-06 2019-01-11 北京金自天正智能控制股份有限公司 A kind of compact is single-phase or three phase excitation power cell
KR102387123B1 (en) * 2020-07-21 2022-04-15 한국항공우주연구원 Ac-dc converter circuit system, and operating method of ac-dc converter circuit system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242595A (en) * 1978-07-27 1980-12-30 University Of Southern California Tunnel diode load for ultra-fast low power switching circuits
US4473757A (en) * 1981-12-08 1984-09-25 Intersil, Inc. Circuit means for converting a bipolar input to a unipolar output
US4608590A (en) 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US5422563A (en) * 1993-07-22 1995-06-06 Massachusetts Institute Of Technology Bootstrapped current and voltage reference circuits utilizing an N-type negative resistance device
US6323718B1 (en) * 1997-12-22 2001-11-27 Stmicroelectronics S.A. Normally-on bidirectional switch
US6483369B1 (en) 2001-10-02 2002-11-19 Technical Witts Inc. Composite mosfet cascode switches for power converters
US6853232B2 (en) * 2002-05-27 2005-02-08 Infineon Technologies Ag Power switching device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900953A (en) * 1987-03-11 1990-02-13 Fujitsu Limited Logic circuit employing field effect transistor having junction with rectifying characteristic between gate and source
US5008565A (en) * 1990-01-23 1991-04-16 Triquint Semiconductor, Inc. High-impedance FET circuit
US5258640A (en) * 1992-09-02 1993-11-02 International Business Machines Corporation Gate controlled Schottky barrier diode

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242595A (en) * 1978-07-27 1980-12-30 University Of Southern California Tunnel diode load for ultra-fast low power switching circuits
US4608590A (en) 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4473757A (en) * 1981-12-08 1984-09-25 Intersil, Inc. Circuit means for converting a bipolar input to a unipolar output
US5422563A (en) * 1993-07-22 1995-06-06 Massachusetts Institute Of Technology Bootstrapped current and voltage reference circuits utilizing an N-type negative resistance device
US6323718B1 (en) * 1997-12-22 2001-11-27 Stmicroelectronics S.A. Normally-on bidirectional switch
US6483369B1 (en) 2001-10-02 2002-11-19 Technical Witts Inc. Composite mosfet cascode switches for power converters
US6853232B2 (en) * 2002-05-27 2005-02-08 Infineon Technologies Ag Power switching device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
V. Khemka et al., "HMS Rectifier: A Novel Hybrid Mos Schottky Diode Concept with No Barier Lowering, Low Leakage Current and High Breakdown Voltage," Proceedings of the 17th International Symposium on Power Semiconductor Devices & IC's, pp. 51-54, May 23-26, 2005, Santa Barbara, California.

Also Published As

Publication number Publication date
WO2006033755A2 (en) 2006-03-30
CN100481697C (en) 2009-04-22
WO2006033755A3 (en) 2006-08-03
US20060062032A1 (en) 2006-03-23
TW200627776A (en) 2006-08-01
DE112005002029B4 (en) 2012-07-12
JP2008512081A (en) 2008-04-17
JP4719746B2 (en) 2011-07-06
CN101040425A (en) 2007-09-19
TWI314384B (en) 2009-09-01
KR100877622B1 (en) 2009-01-07
US7180762B2 (en) 2007-02-20
DE112005002029T5 (en) 2007-07-05
KR20070037651A (en) 2007-04-05

Similar Documents

Publication Publication Date Title
USRE41770E1 (en) Cascoded rectifier
US10454472B2 (en) Bootstrap capacitor over-voltage management circuit for GaN transistor based power converters
US6549439B1 (en) Full wave rectifier circuit using normally off JFETS
US4870555A (en) High-efficiency DC-to-DC power supply with synchronous rectification
US7907001B2 (en) Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
JPWO2019038957A1 (en) Control circuit and power conversion device
JP2012526381A (en) Wide bandgap bipolar turn-off thyristor with non-negative temperature coefficient and associated control circuitry
EP2871765A1 (en) NPC converter for use in power module, and power module incorporating same
AU2014297873A1 (en) Semiconductor device and power conversion device
JP2007521543A (en) On-chip power supply
US20080211552A1 (en) Controllable synchronous rectifier
US9219412B2 (en) Buck converter with reverse current protection, and a photovoltaic system
CN111953332A (en) Device and method for performing efficient power switch by using cascode gallium nitride
US6396333B2 (en) Circuit for synchronous rectification with minimal reverse recovery losses
KR102381873B1 (en) Power converter and controlling method thereof
CN216873068U (en) Driving and current detection circuit of D-Mode gallium nitride power tube easy to integrate
JPH084122B2 (en) Semiconductor device
US11942930B2 (en) Field-effect transistor (FET) based synchronous rectifier for emulating diode
EP4425780A1 (en) Semiconductor arrangement and semiconductor module arrangement
JPH07143733A (en) Snubber circuit
CN110474547A (en) A kind of cascade rectifier
KR20240142307A (en) Device and method for driving gallium nitride device
JP3350562B2 (en) "Switching circuit with on / off detection function and main current detection function", "switching circuit with on / off detection function, self-holding function and self-turn-off function", "on / off detection function and main current detection function Switching circuit with on / off detection function, self-holding function and self-turn-off function "
JPH0345012A (en) Composite semiconductor device and switching circuit
JPH0345011A (en) Composite semiconductor device and switching circuit

Legal Events

Date Code Title Description
CC Certificate of correction
FPAY Fee payment

Year of fee payment: 8

AS Assignment

Owner name: INFINEON TECHNOLOGIES AMERICAS CORP., CALIFORNIA

Free format text: CHANGE OF NAME;ASSIGNOR:INTERNATIONAL RECTIFIER CORPORATION;REEL/FRAME:046612/0968

Effective date: 20151001

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12