DE69836069D1 - Zweirichtungsthyristor - Google Patents

Zweirichtungsthyristor

Info

Publication number
DE69836069D1
DE69836069D1 DE69836069T DE69836069T DE69836069D1 DE 69836069 D1 DE69836069 D1 DE 69836069D1 DE 69836069 T DE69836069 T DE 69836069T DE 69836069 T DE69836069 T DE 69836069T DE 69836069 D1 DE69836069 D1 DE 69836069D1
Authority
DE
Germany
Prior art keywords
triac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69836069T
Other languages
English (en)
Inventor
Pierre Rault
Eric Bernier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69836069D1 publication Critical patent/DE69836069D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
DE69836069T 1997-12-22 1998-12-17 Zweirichtungsthyristor Expired - Lifetime DE69836069D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9716640A FR2773021B1 (fr) 1997-12-22 1997-12-22 Commutateur bidirectionnel normalement ferme

Publications (1)

Publication Number Publication Date
DE69836069D1 true DE69836069D1 (de) 2006-11-16

Family

ID=9515246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69836069T Expired - Lifetime DE69836069D1 (de) 1997-12-22 1998-12-17 Zweirichtungsthyristor

Country Status (5)

Country Link
US (1) US6323718B1 (de)
EP (1) EP0930711B1 (de)
JP (1) JPH11243190A (de)
DE (1) DE69836069D1 (de)
FR (1) FR2773021B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3565322B2 (ja) * 1999-10-15 2004-09-15 シャープ株式会社 光結合素子
FR2800513B1 (fr) * 1999-11-03 2002-03-29 St Microelectronics Sa Detecteur d'etat de composant de puissance
FR2861228A1 (fr) * 2003-10-17 2005-04-22 St Microelectronics Sa Structure de commutateur scr a commande hf
US7276883B2 (en) * 2004-08-12 2007-10-02 International Rectifier Corporation Self-driven synchronous rectified boost converter with inrush current protection using bidirectional normally on device
US7180762B2 (en) * 2004-08-23 2007-02-20 International Rectifier Corporation Cascoded rectifier
JP2010245377A (ja) * 2009-04-08 2010-10-28 Sanken Electric Co Ltd サイリスタ
US9407171B2 (en) * 2012-09-03 2016-08-02 Dytech Energy Pte. Ltd. Apparatus and a method for enhancing power output in electrical circuits
US9455253B2 (en) 2014-07-23 2016-09-27 Stmicroelectronics (Tours) Sas Bidirectional switch
US9722061B2 (en) * 2014-07-24 2017-08-01 Stmicroelectronics (Tours) Sas Bidirectional switch
FR3044166B1 (fr) * 2015-11-19 2018-03-23 Stmicroelectronics Sa Dispositif electronique, en particulier pour la protection contre des surtensions
FR3076661A1 (fr) 2018-01-05 2019-07-12 Stmicroelectronics (Tours) Sas Triode semiconductrice

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818247A (en) * 1972-04-03 1974-06-18 Robertshaw Controls Co Two-lead electrical control apparatus
JPS5210012A (en) * 1975-07-14 1977-01-26 Hitachi Ltd Pnpn switch driving circuit
US5491385A (en) * 1980-08-14 1996-02-13 Nilssen; Ole K. Instant-on screw-in fluorescent lamp
US4424544A (en) * 1982-02-09 1984-01-03 Bell Telephone Laboratories, Incorporated Optically toggled bidirectional switch
DE3561610D1 (en) * 1984-07-12 1988-03-17 Siemens Ag Semiconductor power switch with a thyristor
JPH0823779B2 (ja) 1988-01-22 1996-03-06 東北電機製造株式会社 電力制御装置
FR2743938B1 (fr) * 1996-01-19 1998-04-10 Sgs Thomson Microelectronics Composant de protection d'interface de lignes telephoniques
FR2745669B1 (fr) * 1996-02-29 1998-05-22 Sgs Thomson Microelectronics Interrupteur statique monolithique a trois etats
CN1175115A (zh) * 1996-08-09 1998-03-04 松下电器产业株式会社 通电控制电路及使用它的电子设备

Also Published As

Publication number Publication date
EP0930711A1 (de) 1999-07-21
FR2773021B1 (fr) 2000-03-10
FR2773021A1 (fr) 1999-06-25
US6323718B1 (en) 2001-11-27
JPH11243190A (ja) 1999-09-07
EP0930711B1 (de) 2006-10-04

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Legal Events

Date Code Title Description
8332 No legal effect for de