DE69836069D1 - Zweirichtungsthyristor - Google Patents
ZweirichtungsthyristorInfo
- Publication number
- DE69836069D1 DE69836069D1 DE69836069T DE69836069T DE69836069D1 DE 69836069 D1 DE69836069 D1 DE 69836069D1 DE 69836069 T DE69836069 T DE 69836069T DE 69836069 T DE69836069 T DE 69836069T DE 69836069 D1 DE69836069 D1 DE 69836069D1
- Authority
- DE
- Germany
- Prior art keywords
- triac
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716640A FR2773021B1 (fr) | 1997-12-22 | 1997-12-22 | Commutateur bidirectionnel normalement ferme |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69836069D1 true DE69836069D1 (de) | 2006-11-16 |
Family
ID=9515246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69836069T Expired - Lifetime DE69836069D1 (de) | 1997-12-22 | 1998-12-17 | Zweirichtungsthyristor |
Country Status (5)
Country | Link |
---|---|
US (1) | US6323718B1 (de) |
EP (1) | EP0930711B1 (de) |
JP (1) | JPH11243190A (de) |
DE (1) | DE69836069D1 (de) |
FR (1) | FR2773021B1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3565322B2 (ja) * | 1999-10-15 | 2004-09-15 | シャープ株式会社 | 光結合素子 |
FR2800513B1 (fr) * | 1999-11-03 | 2002-03-29 | St Microelectronics Sa | Detecteur d'etat de composant de puissance |
FR2861228A1 (fr) * | 2003-10-17 | 2005-04-22 | St Microelectronics Sa | Structure de commutateur scr a commande hf |
US7276883B2 (en) * | 2004-08-12 | 2007-10-02 | International Rectifier Corporation | Self-driven synchronous rectified boost converter with inrush current protection using bidirectional normally on device |
US7180762B2 (en) * | 2004-08-23 | 2007-02-20 | International Rectifier Corporation | Cascoded rectifier |
JP2010245377A (ja) * | 2009-04-08 | 2010-10-28 | Sanken Electric Co Ltd | サイリスタ |
JP6129970B2 (ja) * | 2012-09-03 | 2017-05-17 | ダイテック・エナジー・プライベート・リミテッドDytech Energy Pte. Ltd. | 電力出力を増強するための装置および方法 |
US9455253B2 (en) | 2014-07-23 | 2016-09-27 | Stmicroelectronics (Tours) Sas | Bidirectional switch |
US9722061B2 (en) * | 2014-07-24 | 2017-08-01 | Stmicroelectronics (Tours) Sas | Bidirectional switch |
FR3044166B1 (fr) * | 2015-11-19 | 2018-03-23 | Stmicroelectronics Sa | Dispositif electronique, en particulier pour la protection contre des surtensions |
FR3076661A1 (fr) | 2018-01-05 | 2019-07-12 | Stmicroelectronics (Tours) Sas | Triode semiconductrice |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3818247A (en) * | 1972-04-03 | 1974-06-18 | Robertshaw Controls Co | Two-lead electrical control apparatus |
JPS5210012A (en) * | 1975-07-14 | 1977-01-26 | Hitachi Ltd | Pnpn switch driving circuit |
US5491385A (en) * | 1980-08-14 | 1996-02-13 | Nilssen; Ole K. | Instant-on screw-in fluorescent lamp |
US4424544A (en) * | 1982-02-09 | 1984-01-03 | Bell Telephone Laboratories, Incorporated | Optically toggled bidirectional switch |
DE3561610D1 (en) * | 1984-07-12 | 1988-03-17 | Siemens Ag | Semiconductor power switch with a thyristor |
JPH0823779B2 (ja) | 1988-01-22 | 1996-03-06 | 東北電機製造株式会社 | 電力制御装置 |
FR2743938B1 (fr) * | 1996-01-19 | 1998-04-10 | Sgs Thomson Microelectronics | Composant de protection d'interface de lignes telephoniques |
FR2745669B1 (fr) * | 1996-02-29 | 1998-05-22 | Sgs Thomson Microelectronics | Interrupteur statique monolithique a trois etats |
CN1175115A (zh) * | 1996-08-09 | 1998-03-04 | 松下电器产业株式会社 | 通电控制电路及使用它的电子设备 |
-
1997
- 1997-12-22 FR FR9716640A patent/FR2773021B1/fr not_active Expired - Fee Related
-
1998
- 1998-12-10 US US09/209,381 patent/US6323718B1/en not_active Expired - Lifetime
- 1998-12-17 DE DE69836069T patent/DE69836069D1/de not_active Expired - Lifetime
- 1998-12-17 EP EP98410151A patent/EP0930711B1/de not_active Expired - Lifetime
- 1998-12-21 JP JP10362751A patent/JPH11243190A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH11243190A (ja) | 1999-09-07 |
US6323718B1 (en) | 2001-11-27 |
EP0930711A1 (de) | 1999-07-21 |
EP0930711B1 (de) | 2006-10-04 |
FR2773021B1 (fr) | 2000-03-10 |
FR2773021A1 (fr) | 1999-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |