US6151203A - Connectors for an electrostatic chuck and combination thereof - Google Patents

Connectors for an electrostatic chuck and combination thereof Download PDF

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Publication number
US6151203A
US6151203A US09/212,000 US21200098A US6151203A US 6151203 A US6151203 A US 6151203A US 21200098 A US21200098 A US 21200098A US 6151203 A US6151203 A US 6151203A
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US
United States
Prior art keywords
connector
semiconductor wafer
resilient
wafer chuck
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US09/212,000
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English (en)
Inventor
Shamouil Shamouilian
Ananda Kumar
Arnold Kholodenko
Dennis S. Grimard
Liang Guo Wang
Gerhard Schneider
Michael G. Chafin
Semyon Kats
Alexander Veytser
Senh Thach
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Applied Materials Inc
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Applied Materials Inc
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Priority to US09/212,000 priority Critical patent/US6151203A/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAFIN, MICHAEL G., KATS, SEMYON, SCHNEIDER, GERHARD, THACH, SENH, VEYTSER, ALEXANDER
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: GRIMARD, DENNIS S., SHAMOUILIAN, SAM, KHOLODENKO, ARNOLD, KUMAR, ANANDA, WANG, LIANG GUO
Priority to TW088121608A priority patent/TW445565B/zh
Priority to KR1019990057456A priority patent/KR100633978B1/ko
Priority to JP35486599A priority patent/JP4522517B2/ja
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Publication of US6151203A publication Critical patent/US6151203A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/04—Pins or blades for co-operation with sockets
    • H01R13/05—Resilient pins or blades
    • H01R13/052—Resilient pins or blades co-operating with sockets having a circular transverse section

Definitions

  • This invention relates to electrostatic chucks for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system and, more specifically, to connectors for connecting DC chucking voltage and radio-frequency (RF) biasing power to an electrode embedded in a chuck.
  • RF radio-frequency
  • Electrostatic chucks are known to the art for retaining a semiconductor wafer within a process chamber of a semiconductor wafer processing system.
  • a semiconductor wafer processing system is disclosed in U.S. Pat. No. 4,842,683 entitled MAGNETIC FIELD-ENHANCED PLASMA ETCH REACTOR, David Cheng et al. inventors, patented Jun. 27, 1989, and assigned to the same assignee as the present invention; this patent is incorporated herein by reference as if fully reproduced herein.
  • a typical prior art electrostatic chuck 10 is illustrated diagrammatically and separately in FIG. 1.
  • Chuck 10 includes a chuck body 12 of ceramic material, such as for example aluminum nitride, and further includes an electrode 14 embedded in the chuck body 12, near the top portion thereof.
  • the embedded electrode 14 may be, for example, a molybdenum mesh electrode.
  • the electrode 14 is coupled to a power supply through a connector 16.
  • the connector 16 includes a first male connector member 18 and a second female connector member 20.
  • Chuck 10 is attached to a cooling plate 22 suitably mounted to the bottom of the chuck body 12 such as for example by a suitable adhesive or by suitable bol-s not shown.
  • the cooling plate 22 may be made, for example, of stainless steel or aluminum and is provided with a plurality of cooling channels 21 for carrying a liquid coolant for cooling the chuck 10.
  • the first connector member 18 includes an upper solid cylindrical portion 24 extending through a bore 25 formed in the chuck body 12 and an integrally formed lower solid cylindrical portion 26 extending through a bore 27 formed in the cooling plate 22; lower cylindrical portion 26 has a smaller diameter than the upper cylindrical portion 24.
  • the second connector member 20 is provided with inwardly extending an upper cylindrical bore 28 forming a collet 29 for receiving the lower cylindrical portion 26 of the first connector member 18 to mechanically and electrically interconnect the first and second connector members 18 and 20.
  • the second connector member 20 is fixed within an insulator portion 11 of a pedestal base (not shown).
  • the bottom of the second connector member 20 is connected to a source of RF biasing power 30 and a source of DC chucking voltage 32 by a connector 34 and a conductor 35.
  • a body of suitable electrically conductive adhesive 36 mechanically and electrically interconnects the top of first connector member 18 and the electrode 14.
  • the first connector member 18 is made of molybdenum and is suitably plated with an electrically conductive material such as gold, silver, nickel or copper for RF current conduction
  • the second connector member 20 is made of beryllium copper and may be suitably plated with an electrically conductive material such as gold, silver or nickel for RF current conduction.
  • DC chucking voltage is applied to the embedded electrode 14 to retain a semiconductor wafer on the chuck 10 during semiconductor wafer processing and RF biasing power is applied to the embedded electrode 14 to bias the retained semiconductor wafer.
  • FIG. 1 it will be understood that the above-described male and female connector members 18, 20 of the connector 16 are made separately and are assembled in a blind assembly as indicated diagrammatically by the double headed vertical arrow 37.
  • the lower cylindrical portion 26 of the first connector member 18 is referred to as a pin
  • the bore 28 provided in the second connector member 20 is referred to as a collet and their interconnection is referred to as a pin and collet interconnection.
  • Blind assembly of the pin and collet interconnection can result in angular misalignment between the pin and collet as indicated diagrammatically by the double headed horizontal arrow 38 in FIG. 1, and such angular misalignment is illustrated in solid outline and in exaggerated form in FIG. 1A. As shown in FIG.
  • such angular misalignment can result, in extreme cases, in point or line contact rather than surface or area contact between the pin and collet.
  • Such misalignment can result in unwanted electrical contact resistance leading to local RF heating and unwanted reduction in DC current for DC chucking voltage with an attendant loss in semiconductor wafer retention on the chuck 10.
  • the insertion of the pin into the collet can result in unwontedly high assembly and disassembly forces which can result in the misalignment forces being transferred to the interconnection between the top of the first connector member 18 and the embedded mesh electrode 14 causing mechanical and electrical failure of such interconnection.
  • the chuck be operated at a relatively elevated temperature, for example, about 200° C. to about 500° C.
  • a relatively elevated temperature for example, about 200° C. to about 500° C.
  • the first and second connector members 18 and 20 being respectively molybdenum and beryllium copper
  • such molybdenum and beryllium copper connector members conduct the heat to which the chuck 10 is heated, e.g., about 200° C. to about 500° C., with little reduction in temperature, to the bottom of the second connector member 20.
  • the bottom of the second connector member 20 being at about 200° C.
  • the electrical connector 34 and the conductor 35 applying the RF and DC biasing voltage to the connector must be able to withstand substantially 200° C. to about 500° C., with some reduction in temperature, which greatly and undesirably increases their cost and which connector and conductor typically are not commercially available.
  • a chuck which is operated at a relatively high temperature in the range noted above and which chuck includes a connector for applying the DC chucking voltage and the RF biasing power to the chuck electrode which includes thermal impedance which at least assists in reducing the heat transferred between the top portion of the connector and the bottom portion of the connector such that a standard or commercially available electrical connector and electrical conductor can be connected to the bottom of the connector and used to apply the DC chucking voltage and the RF biasing power to the chuck electrode.
  • a semiconductor wafer chuck overcoming the disadvantages of the prior art and embodying the present invention includes a chuck body, an electrode embedded in the chuck body and a connector for connecting RF biasing power and/or DC chucking voltage to the embedded electrode.
  • the connector includes two connector members at least one of which is provided with a resilient banana connector for facilitating blind assembly of the connector members and in another embodiment the connector provides thermal impedance that at least assists in reducing the temperature at the bottom of the connector below the temperature at the top of the connector.
  • FIG. 1 is a vertical elevational view, generally in cross-section, of a prior art semiconductor wafer chuck and connector
  • FIG. 1A is a partial diagrammatical view illustrating pin and collet angular misalignment during blind assembly of the connector members
  • FIG. 2 is a vertical elevational view, generally in cross-section, of a first embodiment of a semiconductor wafer chuck and connector of the present invention
  • FIG. 2A is a vertical elevational view of a connector member comprising the chuck connector of the present invention
  • FIG. 2B is a top view of FIG. 2A;
  • FIG. 2C is a bottom view of FIG. 2A;
  • FIG. 2D is a vertical cross-sectional view taken generally along the vertical line D--D in FIG. 2A and in the direction of the arrows;
  • FIG. 2E is a horizontal cross-sectional view taken generally along the horizontal line E--E in FIG. 2A and in the direction of the arrows;
  • FIG. 2F is a partial diagrammatical view illustrating the advantages of a connector embodiment of the present invention including a resilient banana connector overcoming angular misalignment in blind assembly, and providing improved mechanical and electrical connection and reduced insertion and withdrawal forces;
  • FIG. 3 is a vertical elevational view, generally in cross-section, of an alternate embodiment of a semiconductor wafer chuck and connector of the present invention
  • FIG. 3A is a vertical cross-sectional view of the chuck body shown in FIG. 3;
  • FIG. 3B is a side elevational view of a first connector element shown in FIG. 3;
  • FIG. 3C is a top view of FIG. 3B
  • FIG. 3D is a vertical cross-sectional view taken generally along the line D--D in FIG. 3C and in the direction of the arrows;
  • FIG. 3E is a vertical elevational view, in cross-section, of a second connector element shown in FIG. 3;
  • FIG. 3F is a diagrammatical illustration of a connector member included in a connector embodying the present invention and shown in FIG. 3;
  • FIG. 4 is a vertical elevational view, generally in cross-section, of a still further embodiment of a semiconductor wafer chuck and connector of the present invention
  • FIG. 4A is a separate view of the connector elements shown in FIG. 4;
  • FIG. 4B is a separate view of a connector element shown in FIG. 4;
  • FIG. 5 is an exploded vertical elevational view, in cross-section, of a further embodiment of a semiconductor wafer chuck and connector of the present invention.
  • FIGS. 6-8 are detailed elevational cross-sectional views of connector members which upon being interconnected comprise the connector shown in exploded view in FIG. 5;
  • FIG. 7A is a separate view of the encircled portions of FIG. 7;
  • FIG. 9 is a top view of FIG. 7.
  • FIG. 10 is a partial view diagrammatical illustration of two engaged connector members comprising a connector of the present invention.
  • FIG. 2 depicts a first embodiment of a semiconductor wafer electrostatic chuck 40 embodying the present invention.
  • Chuck 40 includes a chuck body 42 in which an electrode 43 is embedded.
  • the chuck body 42 may be made of a suitable ceramic material such as aluminum nitride, and electrode 43 may be a molybdenum mesh electrode.
  • the chuck 40 further includes a connector 44 embodying the present invention and for connecting DC chucking voltage and/or RF biasing power to the electrode 43.
  • Connector 44 includes a first generally cylindrical first connector member 45 and a second generally cylindrical second connector member 46.
  • the first connector member 45 may be made of molybdenum and may be suitably plated with a suitable plating material chosen from a group consisting of gold, silver, nickel and copper for RF current conduction and the second connector member 46 may be made of beryllium copper and may be suitably plated with a suitable plating material chosen from the group consisting of gold, silver or nickel for RF current conduction. Alternatively, the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the connector member 45 resides in a blind bore 47 formed generally centrally of the chuck body 42 and extending upwardly from the chuck bottom 48 toward the chuck top 49 and opening to the embedded electrode 43.
  • the outer diameter of the upper enlarged cylindrical portion 45a of the generally cylindrical first connector member 45 and the diameter of the chuck bore 47 are dimensioned to form an annular air gap therebetween for receiving a suitable potting adhesive 60, of the type known to the art, for mechanically interconnecting the connector member 45 and the chuck body 42.
  • the top of the connector element 45 is mechanically and electrically interconnected with the electrode 43 by a suitable body of electrically conductive adhesive 51 of the type known to the art for mechanically and electrically interconnecting metal parts.
  • the first connector member 45 is shown in detail in FIGS. 2A-2E and includes an upper cylindrical portion 45a and a lower cylindrical portion 45b of reduced diameter and is provided with a generally centrally formed bore 54 extending upwardly from the bottom of the upper cylindrical portion 45a toward the top thereof as shown in FIG. 2D.
  • the upper cylindrical portion 45a of the first connector member 45 is provided with a plurality of horizontally and radially disposed vacuum bores 56-59 (note FIG. 2E) transverse or perpendicular to and in fluid communication with the central bore 54.
  • a vacuum is drawn on the central bore 54 formed in the first connector member 45 and the vacuum is communicated to the transverse vacuum bores 56-59 to draw the potting adhesive 60, from a suitable source not shown, into the annular air gap between the upper cylindrical portion 45a of the first connector member 45 and the chuck body 42.
  • the first connector member 45 is firmly interconnected to the chuck body 42 and thus should any misalignment forces be produced during the blind assembly of the connector members 45 and 46 the transfer of any such misalignment forces to the interconnection provided by the body of electrically conductive adhesive 51 between the top of the connector member 45 and the embedded electrode 43 is greatly reduced.
  • the second connector member 46 includes a cylindrical body 46a and a resilient banana connector, namely a male resilient banana jack 62, of the type known to the art, mounted suitably to the top of the cylindrical body 46a.
  • the body 46a is generally fixed to an insulator portion 11 of a pedestal base (not shown).
  • the male resilient banana jack 62 and the cylindrical body 46a in the preferred embodiment are made of beryllium copper and, for RF current conduction, are provided with a suitable plating of electrically conductive material such as a plating of electrically conductive material chosen from a group consisting of gold, silver or nickel; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • a suitable electrical connector 34 may be connected to the bottom of the second connector member 46 and RF biasing power from a suitable source 30 and chucking voltage from a suitable DC source 32 may be connected to the connector 34 by a suitable electrical connector 35.
  • the male resilient banana jack 62 is inserted into the bore 54, which functions as a female banana jack socket for receiving the male resilient banana jack 62, to mechanically and electrically interconnect the first connector member 45 and the second connector member 46; since the bore 54 receives the male resilient banana jack 62, it may be considered to be a complementary resilient banana connector.
  • the connector member 45 may be made of molybdenum as noted above, the bore 54 providing the female banana jack socket may be plated with a suitable electrically conductive material chosen from a group consisting of gold, silver, nickel and copper to enhance RF current conduction; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the male resilient banana jack 62 and the female banana jack socket provided by the bore 54 require much lower insertion and withdrawal forces, as indicated by the double-headed vertical arrow 68 in FIG. 2, than do the pin and collet connection of the first and second connector members 18 and 20 illustrated in FIG. 1 and described above. Further, the male resilient banana jack 62, FIG. 2, accommodates any angular misalignment between the male resilient banana jack 62 and the female banana jack socket provided by the bore 54 upon the blind assembly of the first connector member 45 and the second connector member 46.
  • the geometry or configuration of the male resilient banana jack 62 produces substantially consistent mechanical and electrical area or surface contact between the male resilient banana jack 62 and the female banana jack socket provided by the bore 54 upon any angular misalignment therebetween.
  • resilient banana connector as used herein and in the appended claims is used to mean either a male resilient banana connector or a female resilient banana connector and that the term “complementary resilien banana connector” is used to mean a female banana jack socket upon the "resilient banana connector” being a male resilient banana connector and is used to mean a male connector member upon the "resilient banana connector” being a female resilient banana connector.
  • FIG. 3 An alternate embodiment of a semiconductor wafer chuck 70 embodying the present invention is shown in FIG. 3.
  • Chuck 70 includes a chuck body 72 which in the preferred embodiment is ceramic, in particular aluminum nitride.
  • An electrode 73 is embedded in the chuck body 72 and in the preferred embodiment the embedded electrode is a molybdenum mesh electrode.
  • Chuck 70 further includes a connector 74 embodying the present invention and for connecting RF biasing power and DC chucking voltage to the embedded electrode 73.
  • Connector 74 includes a first connector member 76 and a second connector member 78.
  • First connector member 76 includes a first molybdenum connector element 76a (better seen in FIGS. 3B-D) and a second stainless steel connector element 76b (better seen in FIG.
  • the elements 76a and 76b are provided with a suitable plating of electrically conductive material such as a plating of electrically conductive material chosen from a group consisting of gold, silver, nickel and copper; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the chuck 70 as shown in FIG. 3, further includes an aluminum cooling plate 80 mounted to the chuck body 72, for example, by suitable bolts or by a suitable adhesive (not shown).
  • the cooling plate 80 is provided with a plurality of cooling channels 81 for receiving a suitable coolant for cooling the chuck 70.
  • chuck 70 further includes a first resilient insulator 83 and a second resilient insulator 84; in the preferred embodiment, the resilient insulators are made of silicone.
  • the chuck body 72 has a top 86 and a bottom 87 and is provided with a generally centrally formed stepped blind bore 88 and which bore extends upwardly from the chuck body bottom 87 toward the top 86 and opens to the electrode 73.
  • the stepped bore 88 includes a plurality of cylindrical portions 91-94 decreasing in diameter successively upwardly as shown in FIG. 3A.
  • the first molybdenum connector element 76a FIGS. 3B-3D, is a stepped connector element and includes a plurality of generally cylindrical portions 96, 97, 98 and 99 which decrease in diameter successively upwardly as shown in FIGS. 3B and 3D; first connector element 76a also includes a top 101.
  • the cylindrical portions provided on the first connector element 76a are complementary in size and shape to the cylindrical portions 91-94 of the stepped bore 88, FIG. 3A, and are for being received therein as will be understood from FIG. 3.
  • the cylindrical portion 93 of the stepped bore 88 is provided with internal threads and the stepped portion 98 of the first connector element 76a, FIG. 3B, is provided with external threads.
  • the first molybdenum connector element 76a is connected mechanically to the chuck body 72 as shown in FIG. 3 by the threaded engagement between the external threads (FIG. 3B) provided on the first connector element 76a and the internal threads provided in the stepped bore 88 (FIG. 3A).
  • the top 101 of the first connector element 76a (FIGS. 3B-3D) is connected mechanically and electrically to the embedded electrode 73 (FIG. 3) by being brazed thereto; to prevent air gaps between the first connector element 76a and the chuck body 72, the cylindrical portions provided on the first connector element 76a may be brazed to the chuck body.
  • the first connector element 76a is provided with a suitable plating of electrically conductive material chosen from a group consisting of gold, silver, nickel, and copper for RF current conduction; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the second connector element 76b has a top end 103 and a bottom end 104 and is generally frusto-conical in shape decreasing in diameter downwardly from said top end to the bottom end.
  • the second stainless steel connector element 76b is provided with a generally centrally formed blind bore 105 extending upwardly from its bottom end 104 toward the top end 103; the bore 105 provides a female banana jack socket as shown in FIG. 3 and is considered to be a complementary resilient banana connector. Extending upwardly from the top end 103 of the second connector element 76b (FIG.
  • FIG. 3E is an integrally formed, upwardly extending cylindrical member 106 which is provided with external threads 107 for threadedly engaging the internal threads 108 (FIG. 3D) provided in the bore 109 extending upwardly generally centrally of the first connector element 76a.
  • Such threaded engagement mechanically and electrically interconnects the first connector element 76a and the second connector element 76b as shown in FIG. 3.
  • the second connector member 78 is a composite comprised of first and second electrically conductive connector elements 110a and 110b which may be made of stainless steel.
  • the structure of the second connector member 78 is better seen in FIG. 3F and includes a longitudinally extending solid central core 112 which in the preferred embodiment is a length of resilient stainless steel or spring steel and is primarily for providing the second connector member 78 with flexibility and rigidity to enhance the blind assembly of the second connector member 78 with the first connector member 76 particularly the second connector element 76b.
  • the second connector member 78 includes a plurality of longitudinally extending stranded electrical conductors 114 and which in the preferred embodiment comprises a plurality of tightly wound stranded copper conductors wrapped around the central core 112.
  • Representative conductive connector element 110a is provided with an inwardly extending blind bore 110c and a second blind bore 110d extending inwardly of said first blind bore; it will be understood that electrically conductive element 110b is similarly configured with such blind bores.
  • the bottom ends of the plurality of longitudinally extended stranded electrical conductors 114 are received in the blind bore 110c and the bottom end of the solid central core 112 is received in the blind bore 110d after which the bottom ends of the stranded electrical conductors 114 and the solid central core 112 are connected to the conductive connector element 110a by brazing; the top ends of the stranded electrical conductors 114 and the solid central core 112 are connected to the conductive connector element 110b in the same manner.
  • the second connector member 78 includes a pliable conductive wrap 116 surrounding the plurality of stranded copper electrical conductors 114; the pliable conductive wrap 116 is for eliminating any air gaps between the plurality of stranded copper electrical conductors 114.
  • the first connector element 110b is provided with a resilient banana connector, namely a male resilient banana jack 118 and the second connector element 110a is provided with a male resilient banana jack 120.
  • the top male resilient banana jack 118 is for being inserted into the bore 105 (best seen in FIG. 3E) formed in the first connector element 76a which bore 105, as noted above, provides a female banana jack socket.
  • the male resilient banana jack 118 and female banana jack socket provided by the bore 105 provide the same advantages with regard to angular misalignment during blind assembly, namely, reduced insertion and withdrawal forces and consistent electrical area contact, as does the male resilient banana jack 62 and female banana jack socket 54 included in the first semiconductor wafer chuck embodiment shown in FIG. 2 and described above.
  • the bottom male resilient banana jack 120, FIG. 3 may be received in a female banana jack socket 122 provided in an electrical connector 123 for mechanical and electrical engagement therewith.
  • the electrical connector 123 is connected to suitable sources of RF biasing power 30 and DC chucking voltage 32 by electrical conductor 35.
  • the cooling plate 80 is provided with a stepped bore 130 formed therein and extending therethrough.
  • the resilient insulator 83 tightly engages the second connector element 76b comprising the first connector member 76 and a portion of the first connector element 110b comprising the second connector member 78 and eliminates air gaps between the cooling plate 80 and the connector elements 76b and 110b;
  • the second connector element 76b may be provided with an inwardly extending generally annular indentation 108 (note particularly FIG. 3E) and the insulator 83 may be provided with an outwardly extending generally annular ridge or projection 111 (FIG.
  • the resilient insulator 84 surrounds and tightly engages the pliable conductive wrap 116 and portions of the first connector element 110b and second connector element 110a to substantially eliminate air gaps between such elements and the cooling plate 80. Removal of such air gap substantially eliminates RF arcing which RF arcing can produce metal deposition with attendant ruinous RF shorting.
  • the semiconductor wafer chuck 70 of FIG. 3, including the connector 74 is generally useful, it is particularly useful as a high temperature semiconductor wafer chuck and connector. As is known, some semiconductor wafer processing requires that the semiconductor wafer chuck be operated at from about 200° C. to about 500° C., for example, or about 350°. Were the chuck body 72 of the chuck 70, FIG.
  • 3F) of the second connector member 78 are made of stainless steel so as to provide a thermal impedance for reducing the heat transferred from the chuck body 72 and the first connector element 76a to the bottom male resilient banana jack 120.
  • drawn molybdenum has a coefficient of thermal conductivity of 1.46 and stainless steel [18-18 stainless (0.1C, 18CR, 8Mi balance Fe)] has a coefficient of thermal conductivity of 0.163 or approximately 11% of the coefficient of thermal conductivity of the molybdenum.
  • the stainless steel second connector element 76b and the stainless steel components of the second connector member 78 provide thermal impedance at least assisting in reducing the temperature of the heat of the chuck body 72 and first molybdenum connector element 76a transferred to the resilient banana jack 120 provided at the bottom of the second connector member 78.
  • the resilient silicone insulators 83 and 84, FIG. 3, in the preferred embodiment are made of a suitable high temperature silicone including a thermally conductive filler; such high temperature silicone may be, for example the DOW CORNING 23035-T RED high temperature silicone available from Dow Corning Corporation of Midland, Mich.
  • the high temperature resilient insulator 83 surrounds and engages the first connector element 76b, surrounds and engages an upper portion of the second connector member 78 and also engages the cooling plate 80; the high temperature resilient insulator 84 surrounds and engages the generally central portion of the second connector member 78 and the cooling plate 80.
  • such high temperature resilient insulators are sufficiently non-electrically conductive to electrically insulate the second connector element 76b and the upper portion of the second connector member 78 from the cooling plate and that such insulators are sufficiently thermally conductive to transfer heat from the second connector element 76b and the upper and generally central portion of the second connector member 78 to the cooling plate 80.
  • the semiconductor wafer chuck 70 being operated, for example, at the elevated temperature of 350° C.
  • the high temperature resilient insulators will transfer sufficient heat from the second connector element 76b and the second connector member 78, coupled with thermal impedance provided by the second connector element 76b, to reduce the temperature at the male resilient banana jack 120 provided at the bottom of the second connector member 78 to approximately 50° C. whereby the electrical connector 123 and electrical conductor 35 may be commercially available and relatively inexpensive components.
  • the first and second electrically conductive connector elements 110a and 110b are beryllium copper and for RF current conduction are coated with successive layers of nickel, copper, nickel and gold.
  • this alternate embodiment includes the same structural elements shown in FIG. 3 and functions in substantially the same manner as described above in connection with the earlier invention embodiment described in connection with FIG. 3.
  • the semiconductor wafer chuck 130 in FIG. 4 also embodies the present invention and is a further alternate embodiment.
  • the semiconductor wafer chuck 130 includes many of the structural elements comprising the semiconductor wafer chuck 70 shown in FIG. 3 and described above, and for convenience of reference the elements comprising the chuck 130 which are the same as those comprising the chuck 70 have been given the same numerical designations and will be understood to perform the same functions. Accordingly, only the elements comprising the chuck 130 which are different from those comprising the chuck 70 will be described in detail.
  • the connector 134 connects RF biasing power and DC chucking voltage to the chuck electrode 73 and in this connector invention embodiment the connector 134 includes an first connector member 136 and the second connector member 78 shown in FIG. 3 and described above.
  • the first connector member 136 includes a first connector element 138 and a second connector element 139.
  • First connector element 138 may be mechanically and electrically connected to the embedded electrode 73 by brazing and may be made of molybdenum and may be suitably plated with a suitable plating material chosen from a group consisting of gold, silver, nickel and copper for RF current conduction.
  • the second connector element 139 better seen in FIG. 4A, includes a top, a bottom hollow cylindrical member 142, and a solid cylindrical intermediate member 143 extending upwardly therefrom and having a diameter smaller than the diameter of the lower cylindrical member 142.
  • the second connector element 139 may be made of stainless steel to provide thermal impedance in the same manner as the second connector element 76b shown in FIG.
  • the bottom hollow cylindrical member 142 is provided with an upwardly extending blind bore 145 (FIG. 4a) which provides a female banana jack socket for receiving the male resilient banana jack 118, and the bore 145 is considered to be a complementary resilient banana connector.
  • the semiconductor wafer chuck 130 includes a thermally isolating member 140, better seen in FIG. 4B, includes an upper annular or cylindrical portion 152, an integrally formed lower generally trapezoidal portion 154, tapering inwardly downwardly, and has a longitudinal bore 155 extending therethrough for receiving the solid cylindrical portion 143 of the second connector element 139, and the trapezoidal portion 154 has an upwardly extending bore 156 formed therein (FIG. 4B) for receiving the hollow cylindrical portion 142 of the second connector element 139.
  • a thermally isolating member 140 better seen in FIG. 4B, includes an upper annular or cylindrical portion 152, an integrally formed lower generally trapezoidal portion 154, tapering inwardly downwardly, and has a longitudinal bore 155 extending therethrough for receiving the solid cylindrical portion 143 of the second connector element 139, and the trapezoidal portion 154 has an upwardly extending bore 156 formed therein (FIG. 4B) for receiving the hollow cylindrical portion 142 of the second connector element 139.
  • the thermally isolating member 140 is made of a suitable low thermally conductive ceramic, such as for example alumina, and is for electrically isolating at least the solid cylindrical member 143 of the second connector element 139 from the cooling plate 80 and the thermally isolating member 140 may be provided with an inwardly extending groove 158 whose purpose is the same as the inwardly extending groove 108 provided in the second connector element 76b shown in FIG. 3E and described above.
  • the chuck body 144 of this embodiment, FIG. 4 is provided with a generally centrally formed stepped bore 150 extending upwardly from the bottom of the chuck body towards the top of the chuck body and opening to the embedded electrode 73.
  • the stepped bore 150 includes two upwardly extending cylindrical portions decreasing in diameter successively upwardly and from FIG. 4 it will be noted that the first connector element 138 resides in the upper cylindrical portion of the bore 150 and that the upper annular or hollow cylindrical portion 152 of the thermally isolating member 140 resides in the lower cylindrical portion of the stepped bore 150 and is bonded to the ceramic chuck body 72 by an annular body of suitable high temperature adhesive material 154 for bonding ceramics together.
  • Such bonding provides the connector 134, particularly the second connector element 139 with improved robustness, RF arc suppression between the second connector element 139 and the chuck body and in particular increases the amount of force required to break or impair the mechanical, and thereby the electrical, interconnection between the upper first connector element 138 and the embedded electrode 73 which force can be experienced upon any misalignment forces being created in the blind assembly of the first connector member 134 with the second connector member 78.
  • the first and second electrically conductive connector elements 110a and 110b are beryllium copper and for RF current conduction are coated with successive layers of nickel, copper, nickel and gold.
  • the structural elements shown in FIG. 4 are the same and this alternate embodiment functions substantially the same as described above with regard to the earlier embodiment described in connection with FIG. 4.
  • the semiconductor wafer chuck 220 embodies the present invention and is a still further embodiment thereof.
  • the semiconductor wafer chuck 220 includes a chuck body 162, an electrode 73 embedded in the chuck body, an electrode connector 165, a cooling plate 167 which may be of the same general type shown in FIGS. 3-4 and described above, and a connector 230 also embodying the present invention.
  • the chuck body 162 may be aluminum nitride
  • the electrode 73 may be a molybdenum mesh electrode
  • the cooling plate 167 may be aluminum
  • the electrode connector 165 may be a molybdenum electrode connector plated with an electrically conductive material for conducting RF biasing power to the embedded electrode 73, the plating material may be chosen from the group consisting of silver, gold, nickel and copper; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the connector electrode connector 165 is mechanically and electrically connected to the electrode 73 such as by brazing.
  • the electrode connector 165 resides in a centrally formed stepped generally cylindrical bore 168 extending upwardly into the chuck body 162 and opening to the electrode 73.
  • the connector 230 includes a first connector member 231 (better seen in FIG. 6), a second connector member 232 (better seen in FIG. 7), and a third connector member 233 (better seen in FIG. 8).
  • the connector member 231 is inserted into the top of the connector member 232 in blind assembly of the chuck body 162 to the cooling plate 167 and the connector member 233 is for being inserted into the bottom of the connector member 232 to connect RF biasing power from the source 30 and DC chucking voltage from the source 32 to the embedded electrode 73 through the connector 230.
  • the cooling plate 167 is provided with a centrally formed generally cylindrical bore 167a whose top portion is provided with a counter bore 167b which permits an annular mounting surface 167c for mounting the connector 230 in the manner described in detail below.
  • connector member 231 is a solid, generally cylindrical connector member which in the preferred embodiment is stainless steel and which is provided at its top with an integrally formed and upwardly extending and externally threaded projection 185 for threadedly engaging the internal threads provided in the bore 186 (FIG. 5) extending upwardly into the electrode connector 165 to mechanically and electrically interconnect the connector member 231 to the electrode connector 165 and thereby to the embedded electrode 73.
  • the bottom or distal end 189 of the connector member 182, as shown in FIG. 6, is a generally conical or tapered male connector or male connector member and will be understood to be a complimentary resilient banana connector which is for being received in a female resilient banana connector.
  • the connector member 231 is plated with suitable electrically conductive material for RF current conduction and may be chosen from a group consisting of silver, gold, nickel and copper; in the preferred embodiment, the plating is silver.
  • the electrically conductive material for RF current conduction may be successive layers of nickel, copper, nickel and gold.
  • the connector member 232 includes an inner or first connector element 236 and an outer or second connector element 238.
  • the first connector element 236 includes a solid generally cylindrical central portion and is provided at its opposed or top and bottom ends with integrally formed generally hollow or annular cylindrical portions 196a and 196b in which are respectively mounted resilient banana connectors, namely, suitable female resilient banana connectors 199a and 199b; the female resilient banana connectors 199a and 199b may be suitably pressed-fitted into the hollow cylindrical portions 196a and 196b to place the banana connectors and hollow cylindrical portions in mechanical and electrical engagement with the connector element 236.
  • the first connector element 236 and the female resilient banana connectors 199a and 199b are beryllium copper, and may be plated with an electrically conductive material to enhance RF current conduction and which material may be chosen from a group consisting of silver, gold and nickel; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the second connector element 238 is a generally hollow cylindrical electrically insulative connector element and is an isolator for electrically insulating or isolating the connector element 236 from the cooling plate 167 (FIG. 5) and for eliminating air gaps and RF arcing therebetween.
  • the second connector element 238 is a resilient connector element and is provided with an internal generally cylindrical bore 238a for tightly receiving the first connector element 236.
  • the second connector element 238 in a preferred embodiment is a body of high temperature silicone including a thermally conductive additive of the type described above with regard to resilient silicone insulators 83 and 84 as shown in FIG. 3.
  • the second silicone conductor element 238, in the preferred embodiment, is molded in place around the first conductor element 236 so as to be in intimate contact with the outer surface of the inner connector element 236 and such intimate contact prevents RF arcing between the first inner connector element 236 and the second outer connector element 238. From FIGS.
  • the central portion of the conductor element 236 is indented to provide the central portion with a generally hourglass shape so as to enhance the molding of the second silicone conductor element 238 around the conductor element 236 and to enhance the engagement therebetween.
  • the connector member 233 is a solid generally cylindrical connector element which is provided at its upper end with a generally tapered or conical male connector or male connector member 207 which is a complementary resilient banana connector and is for being received within the female resilient banana connector 199b provided at the bottom of the connector element 236 (FIG. 7); in the preferred embodiment the connector member 233 is copper or beryllium copper, and to enhance RF current conduction the connector member 233 may be plated with electrically conductive material chosen from a group consisting of silver, gold and nickel; alternatively the RF current conduction plating material may be successive layers of nickel, copper, nickel and gold.
  • the connector member 232 includes a thermally conductive ring 202, which in the preferred embodiment is a copper ring, and which thermally conductive ring 202 is surrounded or embedded in a portion of the silicone second connector element 238.
  • Thermally conductive ring 202 FIG. 9, is provided with a plurality of holes or bores 202a, 202b, 202c for having threaded bolts extended therethrough, such as representative threaded bolt 202d, shown in FIG. 5, and is for mechanically mounting the connector member 232 to the cooling plate 167 (FIG. 5); more particularly as shown in FIG.
  • the thermally conductive ring 202 and thereby the connector member 231 are mounted to the annular mounting surface 167c by threading bolts, e.g., representative threaded bolt 202d, which threadedly engage corresponding threaded bores extending inwardly into the mounting surface 167c.
  • the metal ring 202 through the bolts residing in bores 202a-202d, mount the connector member 232 mechanically securely to the cooling plate 167 but, since the metal ring 202 is surrounded by or embedded in a portion of the outer resilient silicone connector element 238, the resilient silicone connector element 238 is sufficiently deformable or resilient to permit sufficient relative movement between the connector member 232 and the cooling plate 167 to facilitate insertion of the male connector member 189 provided at the end of the connector member 231 (FIG. 6) into the female resilient banana connector 199a provided at the top of the connector element 236 in blind assembly of the chuck body 162 and connector member 231 with the connector member 232 and cooling plate 167.
  • Such deformability or flexibility of the silicone connector element 238 also facilitates withdrawal of the connector member 231 from the connector member 232, FIG. 5, and disassembly of the chuck body 162 and connector member 231 from the connector member 232 and cooling plate 167.
  • Such assembly and disassembly is as indicated by the double headed arrow 214 in FIG. 5.
  • the resilient silicone second connector element 238 permits at least some movement of the female resilient banana connector 199b within the bottom portion of the connector member 232 to facilitate insertion and withdrawal of the male metal connector member 207 provided at the top of the connector member 233 for the connection and disconnection (FIG.5) of the RF source 30 and the DC source 32 through the connector 230 to and from the embedded electrode 73 provided in the chuck body 162.
  • the insertion and withdrawal, assembly and disassembly, of the female resilient banana connector 199b and male connector member 207 is indicated by the double headed arrow 216 at the lower portion of FIG. 5.
  • the semiconductor wafer chuck 220 and connector 230 of FIG. 5 are generally useful, they are particularly useful as a high temperature semiconductor wafer chuck and conductor.
  • the semiconductor wafer chuck 220 is operated at an elevated temperature, namely, about 200° C. to about 500° C., and for example at about 350° C.
  • connector member 231 (FIG. 6), as noted above, is made of stainless steel so as to provide thermal impedance for reducing the heat transferred from the chuck body 162 to the male connector member 189 provided at the bottom of the connector member 233, FIG. 5.
  • stainless steel 18-18 stainless (0.1C, 18CR, 8Mi balance Fe)
  • the resilient silicone connector element 238 of the connector member 232 (FIG. 7) will be made of the same high temperature silicone with a thermally conductive additive as the resilient silicone insulators 83 and 84 shown in FIG. 3 and described above.
  • the resilient high temperature silicone second connector element 238 serves two functions; first, it is sufficiently electrically non-conductive that it electrically isolates the inner or first copper connector element 236 of the connector member 232, FIG. 5, from the cooling plate 167, and, secondly, it is sufficiently thermally conductive that it transfers heat from the inner or first copper connector element 236 to the cooling plate 167.
  • this invention embodiment includes an asymmetrical feature which provides enhanced heat transfer from the connector member 232 to the cooling plate 167.
  • the thermally conductive ring 238 (FIG. 7) is not located midway between the top and bottom of the connector member 232, but, instead is located proximate the top of the connector member 232 and hence the connector member 232 will be understood to be asymmetrical.
  • annular mounting surface 167c is not located midway between the top and bottom of the cooling plate 167 but, instead, is located proximate the top of the cooling plate and hence the mounting surface 167c and of the cooling plate 167 will be understood to be asymmetrical. This asymmetry causes the majority of the vertical extent of the connector elements 236 and 238 comprising the connector member 232 to be opposite and proximate the majority of the vertical extent of the cooling plate 167 as shown in FIG. 5.
  • FIG. 10 illustrates the connector member 231 inserted into the connector member 232, and more particularly, illustrates the lower portion of the connector member 231, particularly the conical or tapered male connector member 189, inserted into and placed into mechanical and electrical engagement with the female resilient banana connector 199a.
  • the connector member 231 had an outer diameter of 0.198 inch and the annular cylindrical upper portion 196a, formed integrally with the connector element 23E had an inner diameter of 0.235 inch. Accordingly, as will be understood from FIG.
  • FIG. 10 A still further advantage of the present invention will be appreciated from FIG. 10 and from the bundles of arrows 242 and 244 which indicate diagrammatically the electrical fields which will be present between the connector member 231 and the grounded cooling plate 167 upon the connector 230 (FIG. 5) connecting DC chucking voltage and RF current or power to the chuck electrode 73. Since the cooling plate 167 typically is grounded, what is sometimes referred to in the art as a ground plane will be present as indicated diagrammatically by a representative ground plane indicated by the dashed horizontal line 250 between the thermally conductive copper ring 202 and the grounded cooling plate 167.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
US09/212,000 1998-12-14 1998-12-14 Connectors for an electrostatic chuck and combination thereof Expired - Lifetime US6151203A (en)

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US09/212,000 US6151203A (en) 1998-12-14 1998-12-14 Connectors for an electrostatic chuck and combination thereof
TW088121608A TW445565B (en) 1998-12-14 1999-12-09 Connectors for an electrostatic chuck and combination thereof
KR1019990057456A KR100633978B1 (ko) 1998-12-14 1999-12-14 반도체 웨이퍼 척 장치 및 상기 척 장치에 이용되는 커넥터
JP35486599A JP4522517B2 (ja) 1998-12-14 1999-12-14 静電チャックコネクタとそのコンビネーション

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Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US6736668B1 (en) 2000-09-15 2004-05-18 Arnold V. Kholodenko High temperature electrical connector
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
US20060144516A1 (en) * 2004-12-30 2006-07-06 Lam Research Inc., A Delaware Corporation Apparatus for spatial and temporal control of temperature on a substrate
US20070113786A1 (en) * 2005-11-23 2007-05-24 Celetech Semiconductor, Inc. Radio frequency grounding rod
US20080084650A1 (en) * 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
US20090179365A1 (en) * 2008-01-15 2009-07-16 Lerner Alexander N High temperature vacuum chuck assembly
WO2009114175A2 (en) * 2008-03-14 2009-09-17 Lam Research Corporation Cam lock electrode clamp
US20090230636A1 (en) * 2008-03-11 2009-09-17 Ngk Insulators, Ltd. Electrostatic chuck
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US8270141B2 (en) 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US20120247678A1 (en) * 2005-06-22 2012-10-04 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US20130286531A1 (en) * 2012-04-26 2013-10-31 Shinko Electric Industries Co., Ltd. Electrostatic chuck
US20130284372A1 (en) * 2012-04-25 2013-10-31 Hamid Tavassoli Esc cooling base for large diameter subsrates
US20130288483A1 (en) * 2012-04-26 2013-10-31 S.M. Reza Sadjadi Methods and apparatus for controlling substrate uniformity
US20140355170A1 (en) * 2011-09-30 2014-12-04 Toto Ltd. Electrostatic chuck
US20150087181A1 (en) * 2013-01-17 2015-03-26 Joseph Michael Manahan Active cooling of electrical connectors
US20150340261A1 (en) * 2014-05-22 2015-11-26 Shinko Electric Industries Co., Ltd. Electrostatic chuck and semiconductor-liquid crystal manufacturing apparatus
JP2015228398A (ja) * 2014-05-30 2015-12-17 日本特殊陶業株式会社 半導体製造装置用部品
US20160079107A1 (en) * 2014-09-12 2016-03-17 Hitachi High-Technologies Corporation Plasma processing apparatus
US9384946B2 (en) * 2012-01-12 2016-07-05 Hitachi High-Technologies Corporation Plasma processing apparatus
WO2018206822A1 (de) * 2017-05-12 2018-11-15 centrotherm international AG Kontaktierungsvorrichtung zur verbindung eines waferbootes mit einer elektrischen leistungsversorgung
US20190071778A1 (en) * 2017-09-05 2019-03-07 Lam Research Corporation High temperature rf connection with integral thermal choke
US10400333B2 (en) * 2011-03-04 2019-09-03 Novellus Systems, Inc. Hybrid ceramic showerhead
US20210143046A1 (en) * 2018-01-29 2021-05-13 Kyocera Corporation Sample holder
US20210375599A1 (en) * 2020-05-29 2021-12-02 Applied Materials, Inc. Electrical connector for cooled substrate support assembly
US11257703B2 (en) * 2018-03-23 2022-02-22 Ngk Insulators, Ltd. Semiconductor manufacturing apparatus
US20230212735A1 (en) * 2020-06-03 2023-07-06 Applied Materials, Inc. Substrate processing system
US11817341B2 (en) 2017-06-02 2023-11-14 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11835868B2 (en) 2018-03-20 2023-12-05 Lam Research Corporation Protective coating for electrostatic chucks
WO2024044224A1 (en) * 2022-08-26 2024-02-29 Applied Materials, Inc. Gas cooled high power connection rod
US11961754B2 (en) 2021-08-25 2024-04-16 Shinko Electric Industries Co., Ltd. Substrate fixing device
US11990360B2 (en) 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151203A (en) * 1998-12-14 2000-11-21 Applied Materials, Inc. Connectors for an electrostatic chuck and combination thereof
JP2007258610A (ja) * 2006-03-24 2007-10-04 Ngk Insulators Ltd アルミナ焼成体
JP4767788B2 (ja) * 2006-08-12 2011-09-07 日本特殊陶業株式会社 静電チャック装置
JP4909704B2 (ja) * 2006-10-13 2012-04-04 日本特殊陶業株式会社 静電チャック装置
KR100845508B1 (ko) * 2007-04-19 2008-07-10 코리아세미텍 주식회사 웨이퍼 고정용 정전척의 알에프전극 로드 연결 장치
KR101101746B1 (ko) * 2009-10-23 2012-01-05 주성엔지니어링(주) 정전 흡착 장치 및 그의 제조방법
JP2012169458A (ja) * 2011-02-15 2012-09-06 Sumitomo Electric Ind Ltd ウェハ保持体
JP5917946B2 (ja) * 2012-02-24 2016-05-18 東京エレクトロン株式会社 基板載置台及びプラズマエッチング装置
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KR101488806B1 (ko) * 2013-06-04 2015-02-04 (주)티티에스 기판 지지 유닛
JP7313254B2 (ja) * 2019-10-11 2023-07-24 日本特殊陶業株式会社 保持装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
EP0831526A2 (en) * 1996-09-19 1998-03-25 Hitachi, Ltd. Electrostatic chuck, and method of and apparatus for processing sample using the chuck

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0733387Y2 (ja) * 1989-03-15 1995-07-31 旭電機株式会社 接続コネクタ用プラグ
JPH0415171U (ja) * 1990-05-28 1992-02-06
JPH07153517A (ja) * 1993-11-30 1995-06-16 Matsushita Electric Works Ltd プラグ
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
JP2923518B2 (ja) * 1994-03-18 1999-07-26 矢崎総業株式会社 大電流用端子及び加工方法
US5454735A (en) * 1994-04-19 1995-10-03 Radio Frequency Systems, Inc. Severable radio frequency coaxial cable connectors having minimal signal degradation
EP0742588A3 (en) * 1995-05-11 1997-08-27 Applied Materials Inc Method of protecting an electrostatic chuck
JP3790000B2 (ja) * 1997-01-27 2006-06-28 日本碍子株式会社 セラミックス部材と電力供給用コネクターとの接合構造
JP3297637B2 (ja) * 1998-01-30 2002-07-02 京セラ株式会社 ウエハ支持部材
US6151203A (en) * 1998-12-14 2000-11-21 Applied Materials, Inc. Connectors for an electrostatic chuck and combination thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5675471A (en) * 1994-07-19 1997-10-07 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
EP0831526A2 (en) * 1996-09-19 1998-03-25 Hitachi, Ltd. Electrostatic chuck, and method of and apparatus for processing sample using the chuck

Cited By (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6736668B1 (en) 2000-09-15 2004-05-18 Arnold V. Kholodenko High temperature electrical connector
US6795292B2 (en) 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US10636689B2 (en) 2004-12-30 2020-04-28 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
US11302556B2 (en) 2004-12-30 2022-04-12 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
WO2006073947A3 (en) * 2004-12-30 2007-04-05 Lam Res Corp Apparatus for spatial and temporal control of temperature on a substrate
US20090078360A1 (en) * 2004-12-30 2009-03-26 Lam Research Corporation Method of manufacturing apparatus for spatial and temporal control of temperature on a substrate
US8038796B2 (en) 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
US8735298B2 (en) 2004-12-30 2014-05-27 Lam Research Corporation Method for spatial and temporal control of temperature on a substrate
US8821639B2 (en) 2004-12-30 2014-09-02 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
US20060144516A1 (en) * 2004-12-30 2006-07-06 Lam Research Inc., A Delaware Corporation Apparatus for spatial and temporal control of temperature on a substrate
US8051556B2 (en) 2004-12-30 2011-11-08 Lam Research Corporation Method of manufacturing apparatus for spatial and temporal control of temperature on a substrate
WO2006073947A2 (en) * 2004-12-30 2006-07-13 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
US20120247678A1 (en) * 2005-06-22 2012-10-04 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US9520276B2 (en) * 2005-06-22 2016-12-13 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
US20070113786A1 (en) * 2005-11-23 2007-05-24 Celetech Semiconductor, Inc. Radio frequency grounding rod
US9337072B2 (en) 2006-10-04 2016-05-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
US20080084650A1 (en) * 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
US20090179365A1 (en) * 2008-01-15 2009-07-16 Lerner Alexander N High temperature vacuum chuck assembly
US8698048B2 (en) 2008-01-15 2014-04-15 Applied Materials, Inc. High temperature vacuum chuck assembly
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US20090230636A1 (en) * 2008-03-11 2009-09-17 Ngk Insulators, Ltd. Electrostatic chuck
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US20110042879A1 (en) * 2008-03-14 2011-02-24 Lam Research Corporation Cam lock electrode clamp
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US8270141B2 (en) 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US10400333B2 (en) * 2011-03-04 2019-09-03 Novellus Systems, Inc. Hybrid ceramic showerhead
US9042078B2 (en) * 2011-09-30 2015-05-26 Toto Ltd. Electrostatic chuck
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US20130284372A1 (en) * 2012-04-25 2013-10-31 Hamid Tavassoli Esc cooling base for large diameter subsrates
US9240340B2 (en) * 2012-04-26 2016-01-19 Shinko Electric Industries Co., Ltd. Electrostatic chuck
US20130288483A1 (en) * 2012-04-26 2013-10-31 S.M. Reza Sadjadi Methods and apparatus for controlling substrate uniformity
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US10177050B2 (en) 2012-04-26 2019-01-08 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
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US20130286531A1 (en) * 2012-04-26 2013-10-31 Shinko Electric Industries Co., Ltd. Electrostatic chuck
US20150087181A1 (en) * 2013-01-17 2015-03-26 Joseph Michael Manahan Active cooling of electrical connectors
US9553389B2 (en) * 2013-01-17 2017-01-24 Cooper Technologies Company Active cooling of electrical connectors
US20150340261A1 (en) * 2014-05-22 2015-11-26 Shinko Electric Industries Co., Ltd. Electrostatic chuck and semiconductor-liquid crystal manufacturing apparatus
US9887117B2 (en) * 2014-05-22 2018-02-06 Shinko Electric Industries Co., Ltd. Electrostatic chuck and semiconductor-liquid crystal manufacturing apparatus
JP2015228398A (ja) * 2014-05-30 2015-12-17 日本特殊陶業株式会社 半導体製造装置用部品
US20160079107A1 (en) * 2014-09-12 2016-03-17 Hitachi High-Technologies Corporation Plasma processing apparatus
US10037909B2 (en) * 2014-09-12 2018-07-31 Hitachi High-Technologies Corporation Plasma processing apparatus
WO2018206822A1 (de) * 2017-05-12 2018-11-15 centrotherm international AG Kontaktierungsvorrichtung zur verbindung eines waferbootes mit einer elektrischen leistungsversorgung
US11817341B2 (en) 2017-06-02 2023-11-14 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
CN111052299A (zh) * 2017-09-05 2020-04-21 朗姆研究公司 具有整体式热阻流部的高温射频连接
US20220415620A1 (en) * 2017-09-05 2022-12-29 Lam Research Corporation High temperature rf connection with integral thermal choke
US20190071778A1 (en) * 2017-09-05 2019-03-07 Lam Research Corporation High temperature rf connection with integral thermal choke
CN111052299B (zh) * 2017-09-05 2023-10-20 朗姆研究公司 具有整体式热阻流部的高温射频连接
KR20200040213A (ko) * 2017-09-05 2020-04-17 램 리써치 코포레이션 일체형 열 초크를 사용한 고온 rf 접속
US11469084B2 (en) * 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
KR20220158863A (ko) * 2017-09-05 2022-12-01 램 리써치 코포레이션 일체형 열 초크를 사용한 고온 rf 접속
US11640920B2 (en) * 2018-01-29 2023-05-02 Kyocera Corporation Sample holder
US20210143046A1 (en) * 2018-01-29 2021-05-13 Kyocera Corporation Sample holder
US11990360B2 (en) 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation
US11835868B2 (en) 2018-03-20 2023-12-05 Lam Research Corporation Protective coating for electrostatic chucks
TWI799533B (zh) * 2018-03-23 2023-04-21 日商日本碍子股份有限公司 半導體製造裝置
US11257703B2 (en) * 2018-03-23 2022-02-22 Ngk Insulators, Ltd. Semiconductor manufacturing apparatus
US20210375599A1 (en) * 2020-05-29 2021-12-02 Applied Materials, Inc. Electrical connector for cooled substrate support assembly
US20230212735A1 (en) * 2020-06-03 2023-07-06 Applied Materials, Inc. Substrate processing system
US11961754B2 (en) 2021-08-25 2024-04-16 Shinko Electric Industries Co., Ltd. Substrate fixing device
WO2024044224A1 (en) * 2022-08-26 2024-02-29 Applied Materials, Inc. Gas cooled high power connection rod

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KR20000048127A (ko) 2000-07-25
TW445565B (en) 2001-07-11
KR100633978B1 (ko) 2006-10-13
JP2000188321A (ja) 2000-07-04
JP4522517B2 (ja) 2010-08-11

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