US6087820A - Current source - Google Patents

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Publication number
US6087820A
US6087820A US09/265,252 US26525299A US6087820A US 6087820 A US6087820 A US 6087820A US 26525299 A US26525299 A US 26525299A US 6087820 A US6087820 A US 6087820A
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US
United States
Prior art keywords
current
circuit
temperature
output
bandgap reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/265,252
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English (en)
Inventor
Russell J. Houghton
Ernst J. Stahl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Samsung Electronics Co Ltd
International Business Machines Corp
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Siemens AG
International Business Machines Corp
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Application filed by Siemens AG, International Business Machines Corp filed Critical Siemens AG
Priority to US09/265,252 priority Critical patent/US6087820A/en
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HOUGHTON, RUSSELL J.
Assigned to INFINEON TECHNOLOGIES CORPORATION reassignment INFINEON TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: STAHL, ERNST
Priority to EP00103581A priority patent/EP1035460A1/en
Priority to TW089103971A priority patent/TW469364B/zh
Priority to CN00104012A priority patent/CN1271116A/zh
Priority to JP2000065508A priority patent/JP2000330658A/ja
Priority to KR1020000011707A priority patent/KR20000071425A/ko
Assigned to INFINEON TECHNOLOGIES NORTH AMERICA CORP. reassignment INFINEON TECHNOLOGIES NORTH AMERICA CORP. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES CORPORATION
Publication of US6087820A publication Critical patent/US6087820A/en
Application granted granted Critical
Assigned to QIMONDA AG reassignment QIMONDA AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES NORTH AMERICA CORPORATION
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: QIMONDA AG
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INFINEON TECHNOLOGIES AG
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Definitions

  • This invention relates generally to current sources and more particularly to current sources adapted to produce current insensitive to temperature and external voltage supply variations.
  • a method for producing an output current.
  • the method includes adding two currents with opposing temperature coefficients to produce such output current.
  • a first one of the two currents, I 1 is a scaled copy of current produced in a temperature compensated bandgap reference circuit.
  • a second one of the two currents, I 2 is derived from a temperature stable voltage produced by the bandgap circuit divided by a positive temperature coefficient resistance.
  • the added currents, I 1 +I 2 provide the output current.
  • a current source in accordance with another feature of the invention, includes a first circuit for producing: (i) a reference current having a positive temperature coefficient; and (ii) an output voltage at an output node substantially insensitive to variations in supply voltage and temperature over a predetermined range.
  • the current source includes a second circuit connected to the output node for producing a first current derived from the reference current.
  • the first current has a positive temperature coefficient.
  • a third circuit connected to the output node for producing a second current derived from the output voltage, such second current having a negative current temperature coefficient.
  • the first and second currents are summed at the output node to produce, at the output node, an output current related to the sum of the first and second currents, such output current being substantially insensitive to variations in temperature and supply voltage over the predetermined range.
  • the second circuit comprises a current mirror.
  • the third circuit comprises a resistor.
  • the first circuit comprises a bandgap reference circuit.
  • the bandgap reference circuit is a self-biased bandgap reference circuit.
  • the self-biased bandgap reference circuit comprises CMOS transistors.
  • a current source having a bandgap reference circuit adapted for coupling to a supply voltage.
  • the bandgap reference circuit produces: a bandgap reference current having a positive temperature coefficient; and, at an output current summing node, an output voltage substantially insensitive to variations in supply voltage and temperature over a predetermined range.
  • a current summing circuit is provided having a pair of current paths, one of such paths producing a first current derived from the bandgap reference current.
  • the first current has a positive temperature coefficient.
  • Another one of such pair of current paths produces a second current derived from the output voltage.
  • the second current has a negative current temperature coefficient.
  • the first and second currents are summed at the summing node to produce, at the summing node, a current substantially insensitive to variations in temperature and supply voltage over the predetermined range.
  • a current source having a bandgap reference circuit for producing a temperature dependent current which increases with temperature and a temperature stable voltage.
  • a differential amplifier is provided having one of a pair of inputs fed by the temperature stable voltage.
  • a MOSFET has a gate connected to the output of the amplifier and one of the source/drain electrodes is connected to one of the inputs of the amplifier in a negative feedback arrangement. The other one of the source/drain electrodes is coupled to a voltage supply.
  • a summing node is provided at the output of the amplifier.
  • a resistor is connected to the summing node for passing a first current at the summing node.
  • a current mirror is fed by the temperature variant current, for passing a second current at the node.
  • the MOSFET passes through the source and drain electrodes thereof a third current related to the sum of the first and second currents, such third current being independent of temperature.
  • FIG. 1 is a schematic diagram of a current source in accordance with the invention
  • FIG. 2 is a sketch showing the relationship between currents produced in the circuit of FIG. 1 as a function of temperature, T;
  • FIG. 3 is plot showing SPICE simulation results of the circuit of FIG. 1.
  • the current source 10 includes a bandgap reference circuit 12 for producing a temperature dependent current IBGR which increases with increasing temperature, T, and, in response to such temperature dependant current I BGR , a temperature stable voltage V BGR at output 11 of the circuit 12.
  • the current source 10 also includes a differential amplifier 14 having one input, here the inverting input (-) fed by the temperature stable voltage V BGR .
  • a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), here a p-channel MOSFET, T 1 has a gate electrode connected to the output of the amplifier 14.
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • One of the source/drain electrodes of MOSFET T 1 is connected to the other one of the inputs, here the non-inverting (+) input of the amplifier 14 in a negative feedback arrangement.
  • the other one of the source/drain electrodes of MOSFET T 1 is coupled to a voltage supply 18 though a current mirror 20.
  • a summing node 22 is connected to the drain of the MOSFET T 1 .
  • a resistor R having a resistance R(T) which increases with temperature, T, is connected to the summing node 22 for passing a first current I R at the summing node 22. More particularly, the resistor R is connected between the summing node 22 and a reference potential, here ground, as indicated.
  • the current I BGR increases with temperature, T.
  • the current nI BGR also increases with temperature, T as indicated in FIG. 2.
  • the resistance R(T) of resistor R increases with temperature while the voltage V' BGR is substantially invariant with temperature, T
  • the current I R from summing node 22 to ground through resistor R deceases with temperature, T, as indicated in FIG. 2.
  • the value of the resistance of resistor R and the value of n are selected so that the sum of the currents nI BGR and I R is substantially invariant with temperature, T, as indicated in FIG. 2.
  • the circuit 10 produces such temperature/power supply invariant current I REF by adding two currents with opposing temperature coefficients to produce such output current, a first one of the two currents, nI BGR , being a scaled copy of current I BGR produced in a temperature compensated bandgap reference circuit 12 and a second one of the two currents, I R , being derived from a temperature stable voltage V BGR produced by the bandgap circuit 12 divided by a positive temperature coefficient resistance, i.e., the resistor R, such added currents, nI BGR +I R , being the output current I REF .
  • the bandgap reference circuit 10 includes p-channel MOSFETs T 4 , T 5 and T 6 , n-channel MOSFETs T 7 and T 8 , and diodes A 0 and A 1 all arranged as shown.
  • the bandgap reference circuit 12 is connected to the +Volt supply 18 having a voltage greater than the sum of the forward voltage drop across diode D 1 , the threshold voltage of transistor T 5 , and the threshold voltage of transistor T 8 .
  • the bandgap reference circuit 12 also includes a resistor R 1 and a diode D 1 arranged as shown. The diodes D 1 , A 0 , and A 1 are thermally matched.
  • This current I GBR is mirrored by the arrangement of transistors T 5 , T 6 , T 7 and T 8 , such that the current I BGR passes though diode A 1 and the diode D 1 .
  • the voltage at the output 11 (i.e., the voltage V BGR ) of the bandgap reference circuit 12 will however be substantially constant with temperature T because, while the current through resistor R 1 , which mirrors the current I BGR , will also increases with temperature, the voltage across the diode D 1 will decrease with temperature in accordance with -2 mV/° C.
  • the output voltage at 11 (i.e., VBGR) may be expressed as:
  • R 2T0 and R T0 are the resistance values at a reference temperature T0;
  • a is the resistance temperature coefficient of resistors R 2 and R;
  • the current I BGR produced within the bandgap reference circuit 10 (also, current through resistor R 1 ) is well known and may be expressed as: ##EQU1## where: A 1 /A 0 is the diode area ratio (typically 10) and kT/q is the thermal voltage (i.e., k is Boltzmann's constant, T is temperature, and q is the charge of an electron).
  • V BGR is made independent of temperature by design choice.
  • the sum current I REF is the result of multiplying I BGR by a gain factor n provided by current mirror section 26 and adding it to the current passing through R. This is expressed in algebraic form: ##EQU3##
  • R T0 resistance temperature characteristic
  • the resistance temperature characteristic is defined by the constants a and b.
  • the bandgap reference circuit design defines A 0 , A 1 , R 2T0 and V BGR .
  • the constants k and q are known physics constants, as described above.
  • the temperature compensation is not a function of the value of resistor R. Only the absolute value of the current IBGR depends on the value of resistor R.
  • the resistor ratio R 2 /R should constant with process variations when the circuit is formed on the same semiconductor chip. This is a significant advantage of the invention.
  • R 2 71 kilohms or 0.071 megohms at a T0 of 83 degrees Centigrade;
  • V BGR 1.2 volts
  • R 1040 kilohms or 1.04 MegOhms at 83 degrees Centigrade.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
US09/265,252 1999-03-09 1999-03-09 Current source Expired - Lifetime US6087820A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US09/265,252 US6087820A (en) 1999-03-09 1999-03-09 Current source
EP00103581A EP1035460A1 (en) 1999-03-09 2000-02-19 Current source
TW089103971A TW469364B (en) 1999-03-09 2000-03-06 Current source
CN00104012A CN1271116A (zh) 1999-03-09 2000-03-09 电流源
JP2000065508A JP2000330658A (ja) 1999-03-09 2000-03-09 電流源および電流の発生方法
KR1020000011707A KR20000071425A (ko) 1999-03-09 2000-03-09 전류 소스

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/265,252 US6087820A (en) 1999-03-09 1999-03-09 Current source

Publications (1)

Publication Number Publication Date
US6087820A true US6087820A (en) 2000-07-11

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Country Status (6)

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US (1) US6087820A (zh)
EP (1) EP1035460A1 (zh)
JP (1) JP2000330658A (zh)
KR (1) KR20000071425A (zh)
CN (1) CN1271116A (zh)
TW (1) TW469364B (zh)

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