US5635757A - Power semiconductor module and circuit arrangement comprising at least two power semiconductor switch modules - Google Patents

Power semiconductor module and circuit arrangement comprising at least two power semiconductor switch modules Download PDF

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Publication number
US5635757A
US5635757A US08/390,999 US39099995A US5635757A US 5635757 A US5635757 A US 5635757A US 39099995 A US39099995 A US 39099995A US 5635757 A US5635757 A US 5635757A
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United States
Prior art keywords
power semiconductor
connections
module
semiconductor modules
path
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Expired - Fee Related
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US08/390,999
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English (en)
Inventor
Thomas Stockmeier
Uwe Thiemann
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ABB Asea Brown Boveri Ltd
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ABB Asea Brown Boveri Ltd
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Assigned to ABB MANAGEMENT AG reassignment ABB MANAGEMENT AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: STOCKMEIER, THOMAS, THIEMANN, UWE
Assigned to ASEA BROWN BOVERI AG reassignment ASEA BROWN BOVERI AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ABB MANAGEMENT AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to the field of power electronics.
  • European Patent Application EP-A2-0 417 747 has already described such a circuit arrangement or such a power semiconductor module.
  • the circuit arrangement comprises at least two power semiconductor switch modules having a package, two main connections and two gate connections.
  • the power semiconductor modules used are constructed correspondingly.
  • a module comprises, as a rule, a plurality of semiconductor components which can be combined to form a logic functional unit. Examples are rectifiers, individual switches comprising antiparallel diodes or entire phase assemblies. Such modules (thyristor, transistor, IGBT, diode modules) are nowadays widespread in the power region of 1,200 V and a few 100 A and are primarily used in industrial drives.
  • each IGBT half-bridge module for 150 A, 1,200 V may contain six parallel-connected IGBTs and two parallel-connected antiparallel diodes per switching function.
  • IPM integrated power modules
  • a slight variation in the voltage supply of the receiver of an optical waveguide used for the potential-free transmission of the triggering signal and incorporated in the module may result in a propagation time delay of a few 100 nsec, which has a considerable adverse effect on the parallel connection of such modules.
  • one object of the invention is to provide a novel circuit arrangement and a power semiconductor module in which the abovementioned problems can be avoided in the case of parallel connection.
  • the power semiconductor module can be connected in parallel with other modules without preselection and derating up to the full specified performance.
  • the power semiconductor module has, in addition to the gate connection and the main connections, a number of signal connections which are interconnected when a plurality of modules is connected in parallel. In addition, only a single, freely selectable power semiconductor module is connected to the control device.
  • connection between the gate connections and the control device is made in a potential-free manner and, in particular, using optical waveguides.
  • the modules may be mounted on a heat sink.
  • an interface which is responsible for the required signal matching.
  • Said interface may be provided either only in the case of the master or in the case of all the parallel-connected modules.
  • the advantage of the construction according to the invention is, in particular, that a plurality of modules according to the invention can be connected in parallel without preselection or derating since the master governs the other modules, with the result that the problems mentioned at the outset are eliminated.
  • only one type of module has to be manufactured and only one potential-free connection has to be provided. This reduces the user's production costs considerably.
  • the operating costs can also be reduced effectively since, firstly, the uniform loading, governed by the master, of all the modules increases the service life and, secondly, a defective module can be replaced within the parallel connection without difficulty.
  • FIG. 1 shows the parallel connection of four power semiconductor modules according to the invention.
  • FIG. 1 shows the structure of a power semiconductor module (1) according to the invention.
  • This may be any power semiconductor module, for example a GTO, thyristor, IGBT or diode module.
  • the module (1) always comprises a package (2) having, for example, two main connections (3.1, 3.2), at least one gate connection (5.1, 5.2) and a number of signal connections (4.1-4.4).
  • the gate connection comprises, for example, a first connection for signals to be conducted away from the module and a second connection for signals to be conducted to it. It is, in particular, of potential-free design and may be connected, for example, via optical waveguides (8) to a control device, which is not shown.
  • the power semiconductor modules (1) are mounted on a heat sink (6) which has, for example, a coolant flowing through it.
  • coolant connections (7.1, 7.2) are provided on the heat sink (6).
  • the liquid connections (7.1 and 7.2) and the optical waveguide connections (5.1 and 5.2) are disposed on the same side.
  • the power semiconductor module (1) also has a number (four are shown) of signal connections (4.1-4.4).
  • the signal connections may comprise, for example,
  • a signal bus consequently results which has, for example, the above signals.
  • the signal connections (4.1-4.4) are disposed on a separate side of the package.
  • the power semiconductor modules there may be incorporated in the power semiconductor modules (1) an interface which converts the signals coming from the control device and transmitted via the optical waveguides into suitable signals for the signal bus.
  • the signal connections (4.1-4.4) are therefore connected signalwise to the gate connections (5.1, 5.2).
  • the arrangement becomes particularly inexpensive if only that module (1) which is connected to the control device is provided with an interface.
  • the invention provides a power semiconductor module which can be used without difficulty up to maximum powers in an arrangement comprising parallel-connected modules.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thermal Sciences (AREA)
  • Power Conversion In General (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thyristors (AREA)
US08/390,999 1994-02-21 1995-02-21 Power semiconductor module and circuit arrangement comprising at least two power semiconductor switch modules Expired - Fee Related US5635757A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4405443.2 1994-02-21
DE4405443 1994-02-21

Publications (1)

Publication Number Publication Date
US5635757A true US5635757A (en) 1997-06-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
US08/390,999 Expired - Fee Related US5635757A (en) 1994-02-21 1995-02-21 Power semiconductor module and circuit arrangement comprising at least two power semiconductor switch modules

Country Status (4)

Country Link
US (1) US5635757A (ja)
EP (1) EP0669653A1 (ja)
JP (1) JPH07263626A (ja)
CN (1) CN1110833A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777849A (en) * 1996-02-06 1998-07-07 Asea Brown Boveri Ag Power semiconductor module having elongate plug contacts
US6288907B1 (en) * 1996-05-20 2001-09-11 Staktek Group, L.P. High density integrated circuit module with complex electrical interconnect rails having electrical interconnect strain relief
US6671169B1 (en) * 1998-11-06 2003-12-30 Rodscha Drabon Power converter with direct voltage and alternating voltage buses
US20040066629A1 (en) * 2002-06-18 2004-04-08 Dirk Balszunat Cooling device for semiconductor modules
US20050040511A1 (en) * 1998-03-31 2005-02-24 Kinsman Larry D. Back-to-back semiconductor device assemblies
US20090086427A1 (en) * 2007-09-26 2009-04-02 Rohm Co., Ltd. Semiconductor device
US20110233608A1 (en) * 2008-10-29 2011-09-29 Abb Research Ltd Connection arrangement for semiconductor power modules
CN105006474A (zh) * 2015-07-28 2015-10-28 许继电气股份有限公司 柔性直流输电用换流阀组件及其igbt子模块

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260726B8 (de) 2002-12-23 2014-12-18 TRUMPF Hüttinger GmbH + Co. KG Modulare Stromversorgung
KR100684907B1 (ko) * 2006-01-09 2007-02-22 삼성전자주식회사 파워 업 시에 피크 전류를 줄이는 멀티 칩 패키지
TWI376777B (en) * 2006-06-29 2012-11-11 Sandisk Corp Stacked, interconnected semiconductor packages and method of stacking and interconnecting semiconductor packages
US7615409B2 (en) 2006-06-29 2009-11-10 Sandisk Corporation Method of stacking and interconnecting semiconductor packages via electrical connectors extending between adjoining semiconductor packages
US7550834B2 (en) 2006-06-29 2009-06-23 Sandisk Corporation Stacked, interconnected semiconductor packages
DE102008059093B4 (de) * 2008-11-26 2017-04-13 Sew-Eurodrive Gmbh & Co Kg Umrichter mit einem Kopplungsmodul mit Anzeigemitteln
DE102012206264A1 (de) * 2012-04-17 2013-10-17 Semikron Elektronik Gmbh & Co. Kg Anreihbares flüssigkeitsgekühltes Leistungshalbleitermodul und Anordnung hiermit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145256A1 (en) * 1983-11-10 1985-06-19 Fuji Electric Co., Ltd. Darlington transistor pair units
US4808861A (en) * 1986-08-29 1989-02-28 Texas Instruments Incorporated Integrated circuit to reduce switching noise
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
EP0417747A2 (en) * 1989-09-11 1991-03-20 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
US5444295A (en) * 1993-09-07 1995-08-22 Delco Electronics Corp. Linear dual switch module
US5498886A (en) * 1991-11-05 1996-03-12 Monolithic System Technology, Inc. Circuit module redundancy architecture

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043794A (en) * 1990-09-24 1991-08-27 At&T Bell Laboratories Integrated circuit package and compact assemblies thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145256A1 (en) * 1983-11-10 1985-06-19 Fuji Electric Co., Ltd. Darlington transistor pair units
US4808861A (en) * 1986-08-29 1989-02-28 Texas Instruments Incorporated Integrated circuit to reduce switching noise
EP0417747A2 (en) * 1989-09-11 1991-03-20 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5498886A (en) * 1991-11-05 1996-03-12 Monolithic System Technology, Inc. Circuit module redundancy architecture
US5444295A (en) * 1993-09-07 1995-08-22 Delco Electronics Corp. Linear dual switch module

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777849A (en) * 1996-02-06 1998-07-07 Asea Brown Boveri Ag Power semiconductor module having elongate plug contacts
US6288907B1 (en) * 1996-05-20 2001-09-11 Staktek Group, L.P. High density integrated circuit module with complex electrical interconnect rails having electrical interconnect strain relief
US20050040511A1 (en) * 1998-03-31 2005-02-24 Kinsman Larry D. Back-to-back semiconductor device assemblies
US7282789B2 (en) * 1998-03-31 2007-10-16 Micron Technology, Inc. Back-to-back semiconductor device assemblies
US6671169B1 (en) * 1998-11-06 2003-12-30 Rodscha Drabon Power converter with direct voltage and alternating voltage buses
US20040066629A1 (en) * 2002-06-18 2004-04-08 Dirk Balszunat Cooling device for semiconductor modules
US6822865B2 (en) * 2002-06-18 2004-11-23 Robert Bosch Gmbh Cooling device for semiconductor modules
US7773381B2 (en) * 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
US20090086427A1 (en) * 2007-09-26 2009-04-02 Rohm Co., Ltd. Semiconductor device
US20100265664A1 (en) * 2007-09-26 2010-10-21 Rohm Co., Ltd. Semiconductor Device
US7864533B2 (en) 2007-09-26 2011-01-04 Rohm Co., Ltd. Semiconductor device
US8208260B2 (en) 2007-09-26 2012-06-26 Rohm Co., Ltd. Semiconductor device
US8971044B2 (en) 2007-09-26 2015-03-03 Rohm Co., Ltd. Semiconductor device
US9379634B2 (en) 2007-09-26 2016-06-28 Rohm Co., Ltd. Semiconductor device
US20110233608A1 (en) * 2008-10-29 2011-09-29 Abb Research Ltd Connection arrangement for semiconductor power modules
US9024421B2 (en) 2008-10-29 2015-05-05 Abb Research Ltd Connection arrangement for semiconductor power modules
CN105006474A (zh) * 2015-07-28 2015-10-28 许继电气股份有限公司 柔性直流输电用换流阀组件及其igbt子模块
CN105006474B (zh) * 2015-07-28 2018-03-02 许继电气股份有限公司 柔性直流输电用换流阀组件及其igbt子模块

Also Published As

Publication number Publication date
CN1110833A (zh) 1995-10-25
EP0669653A1 (de) 1995-08-30
JPH07263626A (ja) 1995-10-13

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