US5587948A - Nonvolatile semiconductor memory with NAND structure memory arrays - Google Patents

Nonvolatile semiconductor memory with NAND structure memory arrays Download PDF

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US5587948A
US5587948A US08/490,167 US49016795A US5587948A US 5587948 A US5587948 A US 5587948A US 49016795 A US49016795 A US 49016795A US 5587948 A US5587948 A US 5587948A
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data
storage area
memory cell
memory cells
management information
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Hiroto Nakai
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Toshiba Corp
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Toshiba Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Definitions

  • the present invention relates to a NAND type flash EEPROM for storing consecutive data items, especially a memory card.
  • NAND type flash EEPROMs which are low-cost nonvolatile memories suitable for storing a large amount of data, have recently been employed in memory cards.
  • a NAND type flash EEPROM includes data registers in which externally-supplied data of one page can be stored at once. The flash EEPROM is thus the most suitable for a system requiring a high-speed write operation.
  • the read modes in the NAND type flash memory There are two read modes in the NAND type flash memory. One is a random read mode in which data of one page is read from a memory cell to the data registers at once and then data of a data register of a selected column address is read outside. The read time in the random read mode is long and about 10 ⁇ sec. The other is a serial read mode in which the contents of a data register are serially read outside. The read time in this mode is very short and about 100 nsec per byte.
  • Jpn. Pat. Appln. KOKAI Publication No. 4-313882 describes a data management method suitable for storing image information.
  • a stored information map representing such a data management method is shown in FIG. 12 of the present application. According to this method, part of a memory chip is used as a data management information storage area, and the other part is used as a data storage area.
  • a packet number (image number), a card number, a data type, a reserve area, a next-cluster number, etc. are stored as data management information.
  • the read and write operations are performed by reading the data management information out of the data management information storage area. More specifically, data is read out from a data storage area indicated by the management information, while data is written to an empty data storage area retrieved by the management information.
  • the number of times of rewriting of management information stored in the data management information storage area is considerably larger than that of rewriting of data stored in the data storage area, and the time required to reach the limit of the number of times of rewriting in the former case is shorter than in the latter case. Consequently, the lifetime of a card depends upon the number of times of rewriting of management information stored in the data management information storage area.
  • the data management method of Japanese Publication No. 4-313882 is shown in FIG. 13.
  • a memory area is divided into a cluster section for storing data and a header section for storing management information.
  • data of the cluster section and management information of the header section are both erased.
  • data management information is written to the header section.
  • This constitution of the memory area prevents data from being rewritten locally to the data management information storage area, and eliminates the disadvantage that the number of times of rewriting of data stored in the data management information storage area reaches its limitation more quickly.
  • the read operation is performed by referring to management information for accessing data, which is acquired by searching the data management information storage area (header section).
  • management information for accessing data which is acquired by searching the data management information storage area (header section).
  • management information has to be read out from each of the header sections page for every page in order to retrieve header information, and readout time of about 10 ⁇ sec is required for each page.
  • the read time of about 5 msec is required to search for the header section.
  • the data management method as shown in FIG. 12 is adopted, the number of times of rewriting of data stored in the data management information storage area becomes larger than that of rewriting of data stored in the data storage area, and the lifetime of a chip, which depends upon the number of times of rewriting of data stored in the data management information storage area, is shortened.
  • the present invention has been developed in order to resolve the above problem and its object is to provide a NAND type flash EEPROM wherein the lifetime of a chip is lengthened without depending upon the number of times of rewriting in a data management information storage area, and the read, write and erase operations can be performed at high speed by retrieving data from the data management information storage area for a short time.
  • a nonvolatile semiconductor memory comprising: a first array area including a plurality of first NAND strings arranged in matrix, each of the NAND strings having i memory cells which are connected in series and electrically erasable and programmable; a second array area including a plurality of second NAND strings arranged in matrix, each of the NAND strings having j memory cells which are connected in series and electrically erasable and programmable, said j memory cells being smaller in number than said i memory cells; a plurality of bit lines connected to said plurality of first NAND strings arranged in a first direction in said first array area; a plurality of bit lines connected to said plurality of second NAND strings arranged in the first direction in said second array area; a plurality of word lines connected to said plurality of first and second NAND strings arranged in a second direction perpendicular to the first direction in said first and second array areas; and decoding means for selecting one of the memory cells from said first and second NAND strings connected to the
  • the first and second NAND strings each include a select gate transistor between a memory cell and a bit line, and a select gate transistor between a memory cell and a source line.
  • the first and second array areas are contiguous to each other.
  • Some of the plurality of word lines are connected in common to one of the memory cells of the first and second NAND strings arranged in the second direction, and the others thereof are connected in common to one of the memory cells of only the first NAND strings arranged in the second direction.
  • the first array area is interposed between the decoder and the second array area, and some of the plurality of word lines extend from the decoder to the second array area, while the others thereof extend from the decoder and terminate on the first array area.
  • the plurality of word lines arranged in the second direction include j word lines connected in common to one of the memory cells of the first and second NAND strings and (i-j) word lines connected in common to one of the memory cells of only the first NAND strings.
  • the nonvolatile semiconductor memory further comprises a circuit for performing read, write and erase operations at once with respect to the memory cell of one of the first and second array areas selected by the decoder.
  • one NAND string of the data storage area includes i memory cells connected in series
  • one NAND string of the data management information storage area includes j memory cells connected in series.
  • the number of j memory cells is smaller than i memory cells.
  • the data management information storage area is provided in each block of the data storage area capable of erasing data at once. Consequently, the lifetime of a chip is lengthened since it does not depend upon the number of times of rewriting of data in the data management information storage area. Furthermore, since data of the data management area can be read out at high speed, it can be retrieved in a short time, thus achieving high-speed read, write and erase operations.
  • FIG. 1 is a block diagram schematically showing the major part of a nonvolatile semiconductor memory according to an embodiment of the present invention
  • FIG. 2 is a view showing in detail the major part of the memory of FIG. 1;
  • FIG. 3 is a view showing in detail one block of the memory of FIG. 2;
  • FIG. 4 is a view showing in detail a row decoder of FIG. 2;
  • FIG. 5 is a table of control signal voltages in read, write and erase modes
  • FIG. 6 is also a table of control signal voltages in read, write and erase mode
  • FIG. 7 is a view of a plan pattern of one block of the memory shown in FIG. 2;
  • FIG. 8 is a cross-sectional view taken along the line of VIII--VIII of FIG. 7;
  • FIG. 9 is a cross-sectional view taken along the line of VIIII--VIIII of FIG. 7;
  • FIG. 10 is a graph showing the relationship between the number of memory cells in a single NAND string
  • FIG. 11 is a view showing in detail one block of a memory cell of FIG. 2;
  • FIG. 12 is a view showing a prior art method of managing data stored in a memory.
  • FIG. 13 is a view showing a prior art method of managing data stored in a memory.
  • FIG. 1 is a block diagram showing the constitution of the major part of a NAND type flash EEPROM according to an embodiment of the present invention.
  • a row decoder is provided at one end of a memory cell section MC in a column direction, and a sense amplifier is arranged at one end thereof in a row direction.
  • the memory cell section MC is divided into two areas in the column direction. One of the areas is a data storage area, while the other is a data management information storage area.
  • the memory cell section MC can be divided into several areas in the column direction, and these areas can be used as data storage areas and data management information storage areas properly.
  • a data management information storage area can be arranged either at one end of a data storage area in the column direction or between data storage areas.
  • FIG. 2 shows in detail the arrangement of the major part of the NAND type flash EEPROM of FIG. 1.
  • the memory cell section MC is divided into two areas in the column direction, that is, a data storage area 101 alongside a row decoder 11 (on the left-hand side of the figure) and a data management information storage area 102 (on the right-hand side thereof).
  • the data storage area 101 is divided into n (e.g., 256) subareas in the column direction, and each subarea includes, for example, eight bit lines to form one byte.
  • the data management information storage area 102 also includes, for example, eight bit lines to form one byte.
  • the memory cell section MC is divided into m (e.g., 512) subareas in the row direction, and each subarea includes, for example, sixteen word lines to constitute one block.
  • the block has a plurality of NAND strings 12 arranged in the column direction, and the constitution thereof is shown in detail in FIG. 3.
  • the data storage area 101 includes electrically programmable erasable memory cells each having a floating gate. These memory cells are formed at nodes between (n bytes ⁇ 8) bit lines BL11 to BL18, . . . , BLn1 to BLn8 and (m blocks ⁇ 16) word lines WL11 to WL116, . . . , WLm1 to WLm16.
  • FIG. 3 shows the constitution of one block of the memory cell section MC in detail.
  • one NAND string 12 includes i memory cells, e.g., sixteen memory cells M1 to M16, and the gates of these memory cells are connected to their respective word lines WL1 to WL16.
  • the drain-to-source current paths of the memory cells M1 to M16 are connected in series.
  • One end of a current path of a select gate transistor SGD is connected to the drain of one endmost memory cell M1 of the series-connected memory cells.
  • the other end of the current path of the transistor SGD is connected to the bit line BL of the NAND string 12.
  • one end of a current path of a select gate transistor SGS is connected to the source of the other endmost memory cell M16.
  • the other end of the current path of the transistor SGS is connected to a ground line.
  • one NAND string 12 is constituted of two select gate transistors SGD and SGS connected between the bit line and ground line, and sixteen memory cells M1 to M16 connected between these transistors.
  • one NAND string 12' includes j memory cells, e.g., two memory cells MH1 and MH2, which are less than i memory cells.
  • the gates of the memory cells MH1 and MH2 are connected to the word lines WL1 and WL2, respectively.
  • the drain-to-source current paths of the memory cells MH1 and MH2 are connected in series to each other.
  • One end of a current path of a select gate transistor SGD is connected to the drain of the memory cell MH1, while the other end of the current path thereof is connected to the bit line BL of the NAND string 12'.
  • One end of a current path of a select gate transistor SGS is connected to the source of the memory cell MH2, while the other end of the current path thereof is connected to a ground line.
  • one NAND string 12' is constituted of two select gate transistors SGD and SGS connected between the bit line and ground line, and two memory cells MH1 and MH2 connected between these transistors.
  • bit lines BL11 to BL18, . . . , BLn1 to BLn8 are connected to their corresponding sense amplifiers SA11 to SA18, . . . , SAn1 to SAn8.
  • SA11 to SA18 the data stored in the memory cells sensed by the sense amplifiers
  • latch circuits LA11 to LA18, . . . , LAn1 to LAn8 corresponding to the sense amplifiers.
  • the data latched by the latch circuits are output to an I/O bus 14 in units of byte through those (e.g., CG11 to CG18) of column gate transistors CG11 to CG18, . . . CGn1 to CGn8 which are selected by the column decoder 13, and then supplied from an I/O buffer circuit 15 outside a memory chip.
  • a write mode 256-byte data are input in sequence byte by byte through the I/O buffer circuit 15, and stored in the predetermined latch circuits LA11 to LA18 through the column gate transistors (e.g., CG11 to CG18) selected by the column decoder 13.
  • the potentials of the bit lines BL11 to BL18, . . . , BLn1 to BLn8 are determined by the data stored in the latch circuits. If input data is "1", the potentials are set to 1/2 Vpp. If input data is "0", they are set to 0 V. In the write mode, the potential of one word line selected by the row decoder 11 is set to Vpp. The potential of the gate of the select gate transistor SGD in the NAND string 12 including the selected word line is set to about 1/2 Vpp, as are the potentials of the non-selected fifteen word lines.
  • the potential of the gate of the select gate transistor SGS is set to 0 V.
  • an electric field of about 1/2 Vpp is applied between the gate and channel of a memory cell in which input data "1" is stored.
  • the memory cell is not rendered in a write state but remains in an erase state.
  • an electric field of Vpp is applied between the gate and channel of a memory cell.
  • electrons are injected into a floating gate of the memory cell, and the memory cell changes from the erase state to the write state.
  • the gate potentials of the select gate transistors SGD and SGS of the other NAND strings 12, i.e., non-selected NAND strings 12, are all set to 0 V so as to prevent data from being written.
  • the potentials of all word lines of a selected block are set to 0 V, and those of all word lines of the non-selected blocks are set to Vpp. Since the substrate potentials of the memory cells are set to Vpp at the same time, electrons are emitted from the floating gates of memory cells of the selected block to the substrates, and the memory cells of the selected block are all rendered in the erase state. Since, furthermore, the potentials of gates and substrates of all memory cells of the non-selected blocks are set to Vpp, there occurs no difference in potential between the gates and substrates, with the result that the memory cells maintain data which is not to be erased.
  • FIG. 4 shows an arrangement of a row decoder circuit for driving the gates of select gate transistors and those of memory cells in a single NAND string.
  • the row decoder circuit corresponds to one block, and m (e.g., 512) row decoder circuits constitute the row decoder 11 shown in FIG. 2.
  • the row decoder 11 selects NAND string 12 of one block of the data storage area and NAND string 12' of one block of the data management information storage area, and selects one memory cell of each of the NAND strings.
  • P-channel MOS transistors P1 to P5 the substrate potential changes to V DD in the read mode and to V PP in the write/erase mode.
  • An inverter INV1 constituted of the P-channel MOS transistors P1 and P2 and N-channel MOS transistors N1 and N2 outputs a signal through a select gate line SG1 (from the drain side or bit line side).
  • One end of the current path of a depletion type MOS transistor D1 whose threshold value is negative, is connected to an output of an inverter circuit INV2 operated at a V DD power supply voltage, and the other end thereof is connected to a select gate line SG2 (source side).
  • FIG. 5 shows voltages of control signals ⁇ 1 to ⁇ 4, A and B for driving the row decoder circuit in the read, write and erase modes. The voltages are applied to the select gates and word lines in each of the read, write and erase modes.
  • FIG. 6 shows voltages of control signals C1 to C16 in the case where a certain word line of a NAND string is selected in the respective (read, write and erase) modes.
  • the foregoing row decoder circuit for performing a decoding operation in response to an internal address signal has been known conventionally.
  • the memory cell section includes the data storage area 101 having blocks each of 4 K-bytes and the 4-byte data management information storage area 102.
  • the ratio of the size of area 101 to that of area 102 can be varied by changing the relative ratio of memory cell arrays in the column direction.
  • One NAND string 12' of the area 102 is constituted by two memory cells MH1 and MH2 and select gate transistors SGD (drain side) and SGS (source side) which are connected in series between the bit and source lines.
  • the gate electrode of memory cell MH1 and that of memory cell M1 of the data storage area 101 are connected in common to the word line WL1, while the gate electrode of memory cell MH2 and that of memory cell M2 of the data storage area 101 are connected in common to the word line WL2.
  • the source electrode of memory cell MH2 on the source side is connected to the drain electrode of select gate transistor SGS on the source side.
  • the gate electrodes of select gate transistors SGD and SGS in the NAND string 12' of the data management information storage area 102, and those of select gate transistors SGD and SGS, are connected in common to the select gate lines SG1 and SG2.
  • FIG. 7 shows a pattern for forming select gate transistors and memory cells on a silicon substrate.
  • FIG. 8 is a cross-sectional view taken along the line VIII--VIII of FIG. 7
  • FIG. 9 is a cross-sectional view taken along the line VIIII--VIIII of FIG. 7.
  • a p-type well region 22 is formed in a surface region of an n-type silicon substrate 21, and sixteen memory cells M1 to M16 connected in series are formed in the well region 22. While a select gate transistor SGD is formed at one end of a series of the memory cells, a select gate transistor SGS is formed at the other end thereof.
  • sixteen word lines WL1 to WL16 extend from the row decoder circuit. These word lines are formed of polysilicon. Floating gates FG1 to FG16 are formed directly under the nodes (where memory cells are formed) between the word lines WL1 to WL16 and SGD areas (where no string isolation field oxide films are formed) within the data storage area (FIG. 8). The floating gates FG1 to FG16 are formed of polysilicon.
  • select gate lines SG1 and SG2 as well as the word lines WL1 to WL16, extend from the row decoder circuit. These select gate lines are formed of polysilicon. No floating gates are formed right under the nodes between the select gate lines SG1 and SG2 and the SGD areas. Thus, select gate transistors SGD and SGS serve as normal MOS transistors.
  • the two word lines WL1 and WL2 extend to the data management information storage area 102 contiguous to the data storage area 101.
  • the floating gates FG1 and FG2 are formed of polysilicon and arranged directly under the nodes of the word lines WL1 and WL2 and the SDG areas of the data management information storage area (FIG. 9).
  • the two select gate lines SG1 and SG2 also extend to the data management information storage area 102.
  • Select gate transistors SGD and SGS which have no floating gates and thus serve as normal MOS transistors, are formed directly under the nodes of the select gate lines SG1 and SG2 and the SGD areas in the data management information storage area 102.
  • the drain terminal of the select gate transistor SGD is formed by an N+-type diffusion layer 23 and connected to the bit line of aluminum through a contact hole.
  • the source terminal of the select gate transistor SGS is formed by an N+-type diffusion layer 24 and connected to the source line of aluminum through a contact hole.
  • N+-type diffusion layers 25 are formed to serve as sources or drains.
  • the fourteen word lines WL3 to WL16 terminate in the data storage area 101, and neither word lines nor floating gates are present between the word line WL2 and select gate line SG2 in the data management information storage area 102.
  • the source terminal of a memory cell transistor formed by the word line WL2 is connected to the drain terminal of the select gate transistor SGS (source side) by an N+-type diffusion layer 26.
  • the eight bit lines BL1H to BL8H of the data management information storage area 102 are connected to their corresponding sense amplifiers SA1H to SA8H.
  • data management information management data
  • data stored in memory cells sensed by the sense amplifiers SA1H to SA8H are latched by latch circuits LA1H to LA8H corresponding to the sense amplifiers.
  • a block address and a page address are externally supplied first.
  • One of m (e.g., 512) blocks is selected by the block address, and one of word lines WL1 and WL2 is selected by the page address.
  • the selected word line is set to 0 V, and the remaining fifteen word lines of a block of the selected word line are set to power supply voltage V DD , as are the two select gate lines of the block of the selected word line.
  • the above operating conditions are the same as those in the case where a memory cell whose gate is connected to the word lines WL1 and WL2 in the data storage area 101.
  • the row decoder and peripheral circuit (not shown) for driving the row decoder are the same as those of a prior art memory chip including no data management information storage areas.
  • the potentials of the bit lines BL1H and BL8H are determined, and the management data is read out via column gate transistors CG1H to CG8H.
  • the NAND string 12' of the data management information storage area 102 is constituted of two memory cells and two select gate transistors. If, therefore, a memory cell in the erase state is selected, the current flowing through the memory cell is larger than that flowing through a memory cell selected from the data storage area 101.
  • the current flowing through the memory cell serving as a MOS transistor becomes smaller as the source potential increases because of substrate bias effect. The more the memory cells connected between the selected memory cell and source select gate, the smaller the current flowing through the memory cell.
  • the current flowing through two memory cells connected in series is about ten times as large as the current flowing through sixteen memory cells connected in series, with the result that the potential of bit lines of the data management information storage area 102 varies about ten times faster than that of bit lines of the data storage area 101.
  • FIG. 10 shows the relationship between the number of memory cells connected in series in one NAND string and the time required to vary the potential of the bit line having a capacity of about 2 pF by several volts. It is apparent from FIG. 10 that the read time of 10 ⁇ sec or more is required when one NAND string is constituted of sixteen memory cells, while it can be reduced to 1 ⁇ sec or less when one NAND string is constituted of two memory cells.
  • the memory cell data of the data management information storage area 102 is read out by the sense amplifier in 1 ⁇ sec or less, and then latched by data registers (latch circuits) LA1H to LA8H.
  • the latched data is supplied to the I/O bus 14 through the column gate transistors CG1H to CG8H by a byte data read operation and then outside the memory chip from the buffer circuit 15.
  • data management information has to be input to a predetermined latch circuit first.
  • data management information of one byte is consecutively input and latched in the latch circuit.
  • the potentials of eight bit lines of the data management information storage area 102 are determined on the basis of the above input data, and the data management information is written to a memory cell selected by a word line, together with the 256-byte data storage information.
  • the erasure of data management information of the data management information storage area 102 and that of data of the data storage area 101 are performed at the same time.
  • the memory cells of the data management information storage area are formed on the P-type well region 22, as are those of the data storage area.
  • the substrate potentials of the memory cells of the area 102 are set to V pp , as are those of the memory cells of the area 101.
  • the write/erase operation of memory cells of the data management information storage area 102 and that of memory cells of the data storage area are performed at the same time.
  • the foregoing memory eliminates the prior art problem wherein the number of times of rewrite of the memory cells of the area 102 increases, and the lifetime of the memory chip is determined by the increase in the number of times of rewrite.
  • the speed at which the data management information is read out can be set ten or more times higher than the speed at which the stored data is read out. It is thus possible to shorten the retrieval time of a header, which was conventionally about 6 msec.
  • the retrieval time of a header in the case where 16-byte data management information is stored in the same data storage area of 4 K-bytes as that of the prior art shown in FIG. 13.
  • the NAND string 12' of the data management information storage area 102 has only to be constituted of one memory cell M1 and select gate transistors SGD and SGS, as shown in FIG. 11.
  • the read time can be reduced to 200 nsec.
  • the nonvolatile semiconductor memory of the present invention has the following advantage.
  • the data management information storage area is formed contiguous to the data storage area, and one memory cell of a NAND string of the data storage area and that of a NAND string of the data management information storage area in one block are selected at the same time, the number of times of rewriting of memory cells in the data management information storage area can be equal to that in the data storage area, and the lifetime of chips can be lengthened without relying upon the number of times of rewriting in the data management information storage area.
  • the number of memory cells in one NAND string of the data management information storage area is set smaller than that in the data storage area, data of the data management information storage area can be read out at high speed and retrieved in a short time.
  • the read, write and erase operations can be performed at high speed.

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US20070012979A1 (en) * 2005-07-12 2007-01-18 Samsung Electronics Co., Ltd. NAND flash memory device and method of fabricating the same
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US20090116290A1 (en) * 2006-08-25 2009-05-07 Micron Technology, Inc. Methods and apparatuses relating to automatic cell threshold voltage measurement
US7483305B2 (en) * 2006-08-28 2009-01-27 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
US20080049495A1 (en) * 2006-08-28 2008-02-28 Shigekazu Yamada Method, apparatus and system relating to automatic cell threshold voltage measurement
US20100125429A1 (en) * 2008-11-14 2010-05-20 Micron Technology, Inc. Automatic word line leakage measurement circuitry
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JPH087581A (ja) 1996-01-12

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