TW357355B - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
TW357355B
TW357355B TW084106470A TW84106470A TW357355B TW 357355 B TW357355 B TW 357355B TW 084106470 A TW084106470 A TW 084106470A TW 84106470 A TW84106470 A TW 84106470A TW 357355 B TW357355 B TW 357355B
Authority
TW
Taiwan
Prior art keywords
inverted
gate
bundle
line area
serials
Prior art date
Application number
TW084106470A
Other languages
English (en)
Inventor
Hiroto Nakai
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW357355B publication Critical patent/TW357355B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW084106470A 1994-06-17 1995-06-23 Non-volatile semiconductor memory TW357355B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13581494A JP3184045B2 (ja) 1994-06-17 1994-06-17 不揮発性半導体メモリ

Publications (1)

Publication Number Publication Date
TW357355B true TW357355B (en) 1999-05-01

Family

ID=15160439

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084106470A TW357355B (en) 1994-06-17 1995-06-23 Non-volatile semiconductor memory

Country Status (4)

Country Link
US (1) US5587948A (zh)
JP (1) JP3184045B2 (zh)
KR (1) KR0169785B1 (zh)
TW (1) TW357355B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680347A (en) * 1994-06-29 1997-10-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
KR0157342B1 (ko) * 1995-06-09 1998-12-01 김광호 불휘발성 반도체 메모리의 전압 센싱 방법
JP3171122B2 (ja) * 1995-11-27 2001-05-28 ソニー株式会社 半導体記憶装置および半導体記憶装置の情報読出方法
KR100210846B1 (ko) * 1996-06-07 1999-07-15 구본준 낸드셀 어레이
KR100206709B1 (ko) * 1996-09-21 1999-07-01 윤종용 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법
US5729491A (en) * 1996-11-12 1998-03-17 Samsung Electronics Co., Ltd. Nonvolatile integrated circuit memory devices having ground interconnect lattices with reduced lateral dimensions
US7023729B2 (en) * 1997-01-31 2006-04-04 Renesas Technology Corp. Microcomputer and microprocessor having flash memory operable from single external power supply
JP3901883B2 (ja) * 1999-09-07 2007-04-04 富士通株式会社 データバックアップ方法、データバックアップシステム及び記録媒体
JP2001085660A (ja) * 1999-09-10 2001-03-30 Toshiba Corp 固体撮像装置及びその制御方法
US6532556B1 (en) 2000-01-27 2003-03-11 Multi Level Memory Technology Data management for multi-bit-per-cell memories
US6429479B1 (en) * 2000-03-09 2002-08-06 Advanced Micro Devices, Inc. Nand flash memory with specified gate oxide thickness
DE10038877A1 (de) * 2000-08-09 2002-02-28 Infineon Technologies Ag Speicherzelle und Herstellungsverfahren
JP3833970B2 (ja) 2002-06-07 2006-10-18 株式会社東芝 不揮発性半導体メモリ
US20040049628A1 (en) * 2002-09-10 2004-03-11 Fong-Long Lin Multi-tasking non-volatile memory subsystem
JP3984209B2 (ja) 2003-07-31 2007-10-03 株式会社東芝 半導体記憶装置
US7423304B2 (en) * 2003-12-05 2008-09-09 Sandisck 3D Llc Optimization of critical dimensions and pitch of patterned features in and above a substrate
JP4713873B2 (ja) * 2004-11-12 2011-06-29 株式会社東芝 半導体記憶装置
KR101094840B1 (ko) * 2005-07-12 2011-12-16 삼성전자주식회사 낸드형 플래시 메모리 장치 및 그 제조 방법
WO2008024688A2 (en) * 2006-08-25 2008-02-28 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
US7483305B2 (en) * 2006-08-28 2009-01-27 Micron Technology, Inc. Method, apparatus and system relating to automatic cell threshold voltage measurement
US9159452B2 (en) * 2008-11-14 2015-10-13 Micron Technology, Inc. Automatic word line leakage measurement circuitry
JP2010165454A (ja) * 2010-04-16 2010-07-29 Renesas Electronics Corp 不揮発性半導体記憶装置及びデータ記憶システム
US8588007B2 (en) 2011-02-28 2013-11-19 Micron Technology, Inc. Leakage measurement systems
US8634264B2 (en) 2011-10-26 2014-01-21 Micron Technology, Inc. Apparatuses, integrated circuits, and methods for measuring leakage current
DE102021107044A1 (de) 2021-03-10 2022-09-15 Elmos Semiconductor Se Sicherheitsrelevantes Rechnersystems mit einem Datenspeicher und einem Datenspeicher

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1204171A (en) * 1983-07-15 1986-05-06 Stephen K. Sunter Programmable logic array
JPH03283200A (ja) * 1990-03-30 1991-12-13 Toshiba Corp 不揮発性半導体記憶装置及びこれに用いられるメモリセルトランジスタのしきい値電圧の測定方法
JPH04313882A (ja) * 1991-04-12 1992-11-05 Fuji Photo Film Co Ltd メモリカードの記録管理方式
US5319261A (en) * 1992-07-30 1994-06-07 Aptix Corporation Reprogrammable interconnect architecture using fewer storage cells than switches

Also Published As

Publication number Publication date
KR0169785B1 (ko) 1999-02-18
JP3184045B2 (ja) 2001-07-09
JPH087581A (ja) 1996-01-12
KR960002364A (ko) 1996-01-26
US5587948A (en) 1996-12-24

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees