US5107112A - Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof - Google Patents

Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof Download PDF

Info

Publication number
US5107112A
US5107112A US07/413,194 US41319489A US5107112A US 5107112 A US5107112 A US 5107112A US 41319489 A US41319489 A US 41319489A US 5107112 A US5107112 A US 5107112A
Authority
US
United States
Prior art keywords
probe electrode
sample surface
supporting member
probe
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US07/413,194
Other languages
English (en)
Inventor
Yoshihiro Yanagisawa
Kunihiro Sakai
Hisaaki Kawade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA, A CORP. OF JAPAN reassignment CANON KABUSHIKI KAISHA, A CORP. OF JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: KAWADE, HISAAKI, SAKAI, KUNIHIRO, YANAGISAWA, YOSHIHIRO
Priority to US07/783,790 priority Critical patent/US5220555A/en
Application granted granted Critical
Publication of US5107112A publication Critical patent/US5107112A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
    • G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/04—Display or data processing devices
    • G01Q30/06—Display or data processing devices for error compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/02—Probe holders
    • G01Q70/04—Probe holders with compensation for temperature or vibration induced errors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/06—Probe tip arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1445—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other switching at least one head in operating function; Controlling the relative spacing to keep the head operative, e.g. for allowing a tunnel current flow
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/832—Nanostructure having specified property, e.g. lattice-constant, thermal expansion coefficient
    • Y10S977/837—Piezoelectric property of nanomaterial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/873—Tip holder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/874—Probe tip array

Definitions

  • the present invention relates to a scanning tunnel-current-detecting device comprising a mechanism for canceling variations caused by thermal drifts and mechanical vibration, and a method for detecting a tunnel current and to a scanning tunnelling microscope and a recording/reproducing device utilizing a method for detecting tunnel current.
  • STM scanning tunnelling microscope
  • the STM utilizes a tunnel current which flows between a metallic probe (or a probe electrode) and an electroconductive material (or a sample) when an electric voltage is applied therebetween and the both are brought into proximity as close as approximately 1 nm to each other.
  • This current is extremely sensitive to the change of the distance between the probe electrode and the sample, so that the scanning with a probe at a constant tunnel current allows depiction of the surface structure of the real space and simultaneously gives various informations regarding the whole electronic clouds of surface atoms.
  • a vibration isolator is indispensable which reduces external disturbances caused by floor vibration, and a minute deformation of constituting material caused by ambient temperature variation to less than a resolution limit.
  • passive measures are taken such as a method of reducing vibration by dissipating a vibration energy with a damper element of a dynamic vibration isolator, and a method of lowering resonance frequency by employing a relatively massive body as the supporter or the stand to increase a resistance to vibration.
  • An object of the present invention is to provide a scanning tunnel-current-detecting device and a method for detecting the tunnel current which are highly precise and free from the disadvantages of the prior art and from the influence of a temperature drift caused by long time of probe electrode scanning.
  • Another object of the present invention is to provide a scanning tunnelling microscope and a recording/reproducing device which cause little measurement error even when it is used for long time of measurement, and a method for detecting a tunnel current.
  • a scanning tunnel-current-detecting device comprising at least two probe electrodes supported by a supporting member, a means for placing a sample in proximity to the probe electrode, a means for applying voltage between the probe electrode and the sample, at least one of the probe electrode being provided with a mechanism for measuring and compensating variation of the distance between the supporting member and the sample.
  • a scanning tunnelling microscope comprising at least two probe electrodes supported by a supporting member, a means for placing a sample in proximity to the probe electrode, a means for applying voltage between the probe electrode and the sample, at least one of the probe electrode being provided with a mechanism for measuring and compensating variation of the distance between the supporting member and the sample.
  • a method for detecting a tunnel current comprising employing at least two probe electrodes supported by a supporting member, and steps of bringing a sample in confrontation with and in proximity to the probe electrodes such that tunnel current flows, and measuring and compensating variation of the distance between the supporting member and the sample.
  • a recording/reproducing device comprising at least two probe electrodes supported by a supporting member, a means for placing a recording medium in proximity to the probe electrodes, a means for applying voltage between the probe electrodes and the recording medium, at least one of the probe electrodes being provided with a mechanism for measuring and compensating variation of the distance between the supporting member and the recording medium.
  • FIG. 1 illustrates a block diagram of an STM provided with a mechanism for compensating variation caused by thermal drifts and mechanical vibrations.
  • FIG. 2 is a perspective view of the STM with emphasis of the sample for explaining Example 2.
  • the present invention relates to a scanning tunnel-current-detecting device comprising a second probe electrode (a position-controlling tip) provided separately from a first probe electrode for observation, and a variation-compensating mechanism constituted of a feedback servo circuit which detects a variation of the member constituting STM and the sample to be measured caused by a temperature drift from the change of a tunnel current flowing between the second probe electrode and an electroconductive sample, and which drives a fine variation-compensating device in accordance with the signal of detection.
  • FIG. 1 shows a block diagram of an STM comprising a variation compensating mechanism of a preferred embodiment of the present invention.
  • the whole device is mounted on vibration-damping member 101 having a relatively large mass so that a vibration of high frequency from external disturbance can be intercepted.
  • the relative positions of position-controlling tip 109 and observation tip 111 to electroconductive sample 108 can be chosen as desired by means of XY stage 102 within a plane (XY) direction and coarse adjusting mechanism 103 within a height (Z) direction.
  • the numeral 104 donotes a driving circuit for driving coarse adjusting mechanism 103.
  • Observation tip 111 is capable of scanning within a plane direction with a constant tunnel current maintained by cylindrical observation piezo-element 112, where the positional variation of cylindrical observation piezo-element 112 in the Z direction corresponds to the surface state of electroconductive sample 108.
  • Current amplifier 114 amplifies the tunnel current flowing between observation tip 111 and electroconductive sample 108.
  • Servo circuit 115 serves to drive cylindrical observation piezo-element 112 in the Z direction so as to keep the tunnel current constant when observation tip 111 scans.
  • Cylindrical observation piezo-element 112 for driving observation tip 111 is integrated through piezo-element supporting member 116 with position-controlling piezo-element 110 for driving position-controlling tip 109 as shown in FIG. 1.
  • the tunnel current is measured at a specified position of electroconductive sample 108 by position-controlling tip 109.
  • This tunnel current will vary on receiving an external disturbance such as vibration. Accordingly, variations caused by thermal drifts, vibrations, etc. can be cancelled mechanically by driving fine variation-compensating mechanism 105 in the Z direction by moving electroconductive sample 108 through position-controlling servo circuit 106.
  • position-controlling piezo element 110 is employed for setting preliminarily the suitable tunnel current value for controlling thermal drifts, etc. by deciding the position of position-controlling tip 109 in the Z direction before beginning the surface observation, and the preliminarily set driving voltage is kept constant during the observation.
  • the numeral 113 is a circuit for driving position-controlling piezo element 110
  • the numeral 107 is a current amplifier for amplifying a tunnel current flowing between tip 109 and sample 108.
  • central microcomputor 117 The devices described above are respectively controlled by central microcomputor 117.
  • numeral 118 denotes a display instrument.
  • the tunnel current at a specified position was measured by observation tip 111, ten times with the feed back system of the present invention employed against thermal drift and vibration, etc.; and ten times without employing the above feedback system for comparison.
  • the operation of the feed back system was found to reduce the variation caused by the temperature drift to 1/100 or less of the case without employing the feedback system, by which the effect of the present invention was confirmed.
  • FIG. 2 Another example is shown below. As shown in FIG. 2, use of position-controlling tip 109 and three sets of fine variation-compensating mechanism 105 for leveling the sample surface before the observation of the electroconductive sample enabled the maintenance of the leveling during the observation.
  • the device of the present invention as used for a recording/reproducting apparatus is shown below.
  • the constitution of the recording/reproducing apparatus is basically similar to the block diagram shown in FIG. 1.
  • a recording medium having provided with a recording layer partially on the graphite, was used as sample 108.
  • Such the recording medium was so fabricated that the recording layer was positioned under probe electrode 111 and the surface of graphite was positioned under probe 109.
  • An LB layer (one layer) of squarilium-bis-6-octylazulene was used as a recording layer.
  • the LB layer was made according to a method of JP Laid-Open No. 63-161,552.
  • Recording/reproducing was carried out as follows: The probe voltage of 1.0 V was applied between probe electrode 109 and the graphite, and the distance (Z) between probe electrode 109 and the graphite surface was so adjusted that the probe current (Ip) at a specified position was made 10 -9 A by means of fine variation-compensating mechanism 105.
  • (+) was applied on probe electrode 111
  • (-) was applied on the graphite
  • a rectangular pulse voltage more than threshold voltage V th .ON to change a recording layer to a low resistance conditions (ON conditions) was applied to cause the ON conditions.
  • a probe voltage 1.0 V was applied between probe electrode 111 and the graphite, and probe current (Ip) was measured. It was confirmed to be the ON conditions by detecting a current of about 0.5 mA.
  • the STM provided with a mechanism for removing variation caused by thermal drifts and mechanical vibrations can be exempted, in observation, from the influence of vibration of an angstrom order and a minute deformation of the construction material caused by temperature change.
  • the device of the present invention may preferably used for a tunnelling current detecting device other than a tunnel microscope, such as a recording-reproducing apparatus and the like.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
US07/413,194 1988-09-30 1989-09-27 Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof Expired - Lifetime US5107112A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US07/783,790 US5220555A (en) 1988-09-30 1991-10-29 Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-244590 1988-09-30
JP24459088 1988-09-30
JP1246427A JP2896794B2 (ja) 1988-09-30 1989-09-25 走査型トンネル電流検出装置，走査型トンネル顕微鏡，及び記録再生装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US07/783,790 Continuation US5220555A (en) 1988-09-30 1991-10-29 Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof

Publications (1)

Publication Number Publication Date
US5107112A true US5107112A (en) 1992-04-21

Family

ID=26536798

Family Applications (1)

Application Number Title Priority Date Filing Date
US07/413,194 Expired - Lifetime US5107112A (en) 1988-09-30 1989-09-27 Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof

Country Status (6)

Country Link
US (1) US5107112A (de)
EP (1) EP0361932B1 (de)
JP (1) JP2896794B2 (de)
AT (1) ATE139333T1 (de)
CA (1) CA1318980C (de)
DE (1) DE68926648T2 (de)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222060A (en) * 1989-09-07 1993-06-22 Canon Kabushiki Kaisha Accessing method, and information processing method and information processing device utilizing the same
US5299184A (en) * 1991-05-15 1994-03-29 Canon Kabushiki Kaisha Information processing apparatus with held distance control on track edge detection
US5329122A (en) * 1991-08-29 1994-07-12 Canon Kabushiki Kaisha Information processing apparatus and scanning tunnel microscope
US5371727A (en) * 1991-10-15 1994-12-06 Canon Kabushiki Kaisha Scanning tunnel microscopy information processing system with noise detection to correct the tracking mechanism
US5391871A (en) * 1991-06-05 1995-02-21 Canon Kabushiki Kaisha Scanning probe microscope
US5426631A (en) * 1992-12-21 1995-06-20 Canon Kabushiki Kaisha Information recording and reproducing apparatus for recording and reproducing information by using a probe electrode
US5431055A (en) * 1989-02-17 1995-07-11 Hitachi, Ltd. Surface measuring apparatus using a probe microscope
US5481529A (en) * 1993-02-17 1996-01-02 Canon Kabushiki Kaisha Scanning probe microscope for observing a sample surface while applying an AC bias voltage between the sample and a probe
US5535185A (en) * 1993-01-21 1996-07-09 Canon Kabushiki Kaisha Information recording/reproduction apparatus using probe
US5581364A (en) * 1991-03-06 1996-12-03 Canon Kabushiki Kaisha Method for recording and/or reproducing image signals and an apparatus therefor utilizing two dimensional scanning of a recording medium by a probe
US5633455A (en) * 1993-10-05 1997-05-27 Board Of Trustees Of The Leland Stanford, Jr. University Method of detecting particles of semiconductor wafers
US5793040A (en) * 1995-01-13 1998-08-11 Canon Kabushiki Kaisha Information processing aparatus effecting probe position control with electrostatic force
US6337479B1 (en) 1994-07-28 2002-01-08 Victor B. Kley Object inspection and/or modification system and method
US6353219B1 (en) 1994-07-28 2002-03-05 Victor B. Kley Object inspection and/or modification system and method
US20020135755A1 (en) * 1994-07-28 2002-09-26 Kley Victor B. Scanning probe microscope assembly
US6506087B1 (en) 1998-05-01 2003-01-14 Canon Kabushiki Kaisha Method and manufacturing an image forming apparatus having improved spacers
US6752008B1 (en) 2001-03-08 2004-06-22 General Nanotechnology Llc Method and apparatus for scanning in scanning probe microscopy and presenting results
US20040118192A1 (en) * 2002-09-09 2004-06-24 General Nanotechnology Llc Fluid delivery for scanning probe microscopy
US6787768B1 (en) 2001-03-08 2004-09-07 General Nanotechnology Llc Method and apparatus for tool and tip design for nanomachining and measurement
US6802646B1 (en) 2001-04-30 2004-10-12 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US6813937B2 (en) 2001-11-28 2004-11-09 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US6865927B1 (en) 2001-01-30 2005-03-15 General Nanotechnology Llc Sharpness testing of micro-objects such as miniature diamond tool tips
US20050056783A1 (en) * 1999-07-01 2005-03-17 General Nanotechnology, Llc Object inspection and/or modification system and method
US6880388B1 (en) 2001-03-08 2005-04-19 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US20050190684A1 (en) * 1995-07-24 2005-09-01 General Nanotechnology Llc Nanometer scale data storage device and associated positioning system
US7053369B1 (en) 2001-10-19 2006-05-30 Rave Llc Scan data collection for better overall data accuracy
US7196328B1 (en) 2001-03-08 2007-03-27 General Nanotechnology Llc Nanomachining method and apparatus
US7253407B1 (en) 2001-03-08 2007-08-07 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US20080018909A1 (en) * 2006-07-20 2008-01-24 Canon Kabushiki Kaisha Droplet shape measuring method and apparatus

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945090B2 (ja) * 1990-07-09 1999-09-06 キヤノン株式会社 エンコーダ
DE4035075A1 (de) * 1990-11-05 1992-05-07 Jenoptik Jena Gmbh Anordnung zum messen linearer abmessungen auf einer strukturierten oberflaeche eines messobjektes
CA2060674C (en) * 1991-02-08 1996-10-01 Masahiro Tagawa Driving apparatus and a recording and/or reproducing apparatus using the same
ATE225557T1 (de) * 1991-07-17 2002-10-15 Canon Kk Informationsaufzeichnungs-/-wiedergabegerät oder -verfahren zur informationsaufzeichnung/- wiedergabe auf/von einem informationsaufzeichnungsmedium unter verwendung einer vielzahl von sondenelektroden
US5248199A (en) * 1992-03-02 1993-09-28 Ta Instruments, Inc. Method and apparatus for spatially resolved modulated differential analysis
EP0568753A1 (de) * 1992-05-07 1993-11-10 International Business Machines Corporation Optische Speichereinheit mit hoher Datendichte und Informations-, Schreib- und Leseverfahren
JP3246987B2 (ja) * 1992-09-10 2002-01-15 キヤノン株式会社 マルチプローブ制御回路を具備する情報処理装置
US5260577A (en) * 1992-11-09 1993-11-09 International Business Machines Corp. Sample carriage for scanning probe microscope
DE4344499C2 (de) * 1993-12-24 1998-09-10 Forschungszentrum Juelich Gmbh Rastersondenmikroskop mit Detektorsonde
US5948972A (en) * 1994-12-22 1999-09-07 Kla-Tencor Corporation Dual stage instrument for scanning a specimen
US6520005B2 (en) 1994-12-22 2003-02-18 Kla-Tencor Corporation System for sensing a sample
JPH0926427A (ja) * 1995-07-07 1997-01-28 Hewlett Packard Co <Hp> 位置決め装置、およびこれを用いたメディア移動型メモリ装置
DE19754681A1 (de) * 1997-12-10 1999-06-17 Peter Heiland In einem Rastermodus abtastende Vorrichtung mit einer Kompensation des Störeinflusses vonmechanischen Schwingungen auf dem Abtastvorgang
DE10344538A1 (de) 2003-09-25 2005-05-12 Integrated Dynamics Eng Gmbh Verfahren und Vorrichtung zur Schwingungsisolation, insbesondere für Elektronenstrahl-Meßwerkzeuge
JP4810241B2 (ja) * 2006-01-25 2011-11-09 キヤノン株式会社 プローブユニットおよび原子間力顕微鏡
CN101769711B (zh) * 2010-01-26 2012-09-05 重庆理工大学 一种基于隧道效应的接触式纳米位移传感器
CN106645803B (zh) * 2016-12-14 2019-03-22 国家纳米科学中心 一种双探针原子力显微镜快速逼近装置及方法
CN112924275B (zh) * 2021-01-25 2022-06-24 武汉大学 一种微力测量装置、其制备方法及原位力学测试的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481616A (en) * 1981-09-30 1984-11-06 Rca Corporation Scanning capacitance microscope
DE3513799C1 (de) * 1985-04-17 1986-04-10 Daimler-Benz Ag, 7000 Stuttgart Geraet zur beruehrungslosen Abstandsermittlung mittels Funkenentladung
EP0194323A1 (de) * 1985-03-07 1986-09-17 International Business Machines Corporation Tunneleffektabtastungsmikroskop
EP0262253A1 (de) * 1986-10-03 1988-04-06 International Business Machines Corporation Mikromechanische Fühlervorrichtung für atomare Kräfte
WO1988004028A1 (fr) * 1986-11-25 1988-06-02 Battelle Memorial Institute Procede pour detecter des variations d'epaisseur dans la paroi d'un corps tubulaire conducteur de l'electricite
EP0272935A2 (de) * 1986-12-24 1988-06-29 Canon Kabushiki Kaisha Aufnahmegerät und Wiedergabegerät
US4831614A (en) * 1986-05-27 1989-05-16 International Business Machines Corporation Direct access storage unit using tunneling current techniques

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142202A (ja) * 1986-12-05 1988-06-14 Fujitsu Ltd 高周波トンネル顕微鏡
JP2810038B2 (ja) * 1987-03-20 1998-10-15 株式会社日立製作所 荷電ビーム装置
JPS6486002A (en) * 1987-09-29 1989-03-30 Fujitsu Ltd Fine displacement meter

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4481616A (en) * 1981-09-30 1984-11-06 Rca Corporation Scanning capacitance microscope
EP0194323A1 (de) * 1985-03-07 1986-09-17 International Business Machines Corporation Tunneleffektabtastungsmikroskop
US4668865A (en) * 1985-03-07 1987-05-26 International Business Machines Corporation Scanning tunneling microscope
DE3513799C1 (de) * 1985-04-17 1986-04-10 Daimler-Benz Ag, 7000 Stuttgart Geraet zur beruehrungslosen Abstandsermittlung mittels Funkenentladung
US4831614A (en) * 1986-05-27 1989-05-16 International Business Machines Corporation Direct access storage unit using tunneling current techniques
EP0262253A1 (de) * 1986-10-03 1988-04-06 International Business Machines Corporation Mikromechanische Fühlervorrichtung für atomare Kräfte
WO1988004028A1 (fr) * 1986-11-25 1988-06-02 Battelle Memorial Institute Procede pour detecter des variations d'epaisseur dans la paroi d'un corps tubulaire conducteur de l'electricite
EP0272935A2 (de) * 1986-12-24 1988-06-29 Canon Kabushiki Kaisha Aufnahmegerät und Wiedergabegerät

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
"High-stability bimorph scanning tunneling microscope", Blackford et al., Rev. of Sci. Inst., vol. 58, No. 8, Aug. 87, pp. 1343-1348.
G. Binnig et al., "Scanning tunneling microscopy", (1982) Helvetica Physica vol. 55 pp. 726-735.
G. Binnig et al., Scanning tunneling microscopy , (1982) Helvetica Physica vol. 55 pp. 726 735. *
High stability bimorph scanning tunneling microscope , Blackford et al., Rev. of Sci. Inst., vol. 58, No. 8, Aug. 87, pp. 1343 1348. *

Cited By (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431055A (en) * 1989-02-17 1995-07-11 Hitachi, Ltd. Surface measuring apparatus using a probe microscope
US5222060A (en) * 1989-09-07 1993-06-22 Canon Kabushiki Kaisha Accessing method, and information processing method and information processing device utilizing the same
US5581364A (en) * 1991-03-06 1996-12-03 Canon Kabushiki Kaisha Method for recording and/or reproducing image signals and an apparatus therefor utilizing two dimensional scanning of a recording medium by a probe
US5299184A (en) * 1991-05-15 1994-03-29 Canon Kabushiki Kaisha Information processing apparatus with held distance control on track edge detection
US5391871A (en) * 1991-06-05 1995-02-21 Canon Kabushiki Kaisha Scanning probe microscope
US5329122A (en) * 1991-08-29 1994-07-12 Canon Kabushiki Kaisha Information processing apparatus and scanning tunnel microscope
US5371727A (en) * 1991-10-15 1994-12-06 Canon Kabushiki Kaisha Scanning tunnel microscopy information processing system with noise detection to correct the tracking mechanism
US5426631A (en) * 1992-12-21 1995-06-20 Canon Kabushiki Kaisha Information recording and reproducing apparatus for recording and reproducing information by using a probe electrode
US5535185A (en) * 1993-01-21 1996-07-09 Canon Kabushiki Kaisha Information recording/reproduction apparatus using probe
US5481529A (en) * 1993-02-17 1996-01-02 Canon Kabushiki Kaisha Scanning probe microscope for observing a sample surface while applying an AC bias voltage between the sample and a probe
US5633455A (en) * 1993-10-05 1997-05-27 Board Of Trustees Of The Leland Stanford, Jr. University Method of detecting particles of semiconductor wafers
US20020135755A1 (en) * 1994-07-28 2002-09-26 Kley Victor B. Scanning probe microscope assembly
US6861648B2 (en) 1994-07-28 2005-03-01 General Nanotechnology Llc Scanning probe microscopy inspection and modification system
US6353219B1 (en) 1994-07-28 2002-03-05 Victor B. Kley Object inspection and/or modification system and method
US20050172703A1 (en) * 1994-07-28 2005-08-11 General Nanotechnology Llc Scanning probe microscopy inspection and modification system
US7045780B2 (en) 1994-07-28 2006-05-16 General Nanotechnology, Llc Scanning probe microscopy inspection and modification system
US7615738B2 (en) 1994-07-28 2009-11-10 General Nanotechnology, Llc Scanning probe microscope assembly and method for making spectrophotometric, near-field, and scanning probe measurements
US6337479B1 (en) 1994-07-28 2002-01-08 Victor B. Kley Object inspection and/or modification system and method
US7485856B2 (en) 1994-07-28 2009-02-03 General Nanotechnology Llp Scanning probe microscopy inspection and modification system
US20070022804A1 (en) * 1994-07-28 2007-02-01 General Nanotechnology Llc Scanning probe microscopy inspection and modification system
US7091476B2 (en) 1994-07-28 2006-08-15 General Nanotechnology Llc Scanning probe microscope assembly
US20060237639A1 (en) * 1994-07-28 2006-10-26 General Nanotechnology Llc Scanning probe microscope assembly and method for making spectrophotometric, near-filed, and scanning probe measurements
US5793040A (en) * 1995-01-13 1998-08-11 Canon Kabushiki Kaisha Information processing aparatus effecting probe position control with electrostatic force
US20060239129A1 (en) * 1995-07-24 2006-10-26 General Nanotechnology Llc Nanometer scale data storage device and associated positioning system
US7535817B2 (en) 1995-07-24 2009-05-19 General Nanotechnology, L.L.C. Nanometer scale data storage device and associated positioning system
US7042828B2 (en) 1995-07-24 2006-05-09 General Nanotechnology Llc Nanometer scale data storage device and associated positioning system
US20050190684A1 (en) * 1995-07-24 2005-09-01 General Nanotechnology Llc Nanometer scale data storage device and associated positioning system
US10610995B2 (en) 1998-01-21 2020-04-07 Victor B. Kley Method and apparatus for nanolapping
US7160168B2 (en) 1998-05-01 2007-01-09 Canon Kabushiki Kaisha Method of manufacturing image forming apparatus
US6506087B1 (en) 1998-05-01 2003-01-14 Canon Kabushiki Kaisha Method and manufacturing an image forming apparatus having improved spacers
US20030124945A1 (en) * 1998-05-01 2003-07-03 Canon Kabushiki Kaisha Method of manufacturing an image forming apparatus having improved spacers
US6712665B2 (en) 1998-05-01 2004-03-30 Canon Kabushiki Kaisha Method of manufacturing an image forming apparatus having improved spacers
US7297039B2 (en) 1998-05-01 2007-11-20 Canon Kabushiki Kaisha Method of manufacturing image forming apparatus
US20070072507A1 (en) * 1998-05-01 2007-03-29 Canon Kabushiki Kaisha Method of manufacturing image forming apparatus
US20040152391A1 (en) * 1998-05-01 2004-08-05 Canon Kabushiki Kaisha Method of manufacturing image forming apparatus
US7109482B2 (en) 1999-07-01 2006-09-19 General Nanotechnology Llc Object inspection and/or modification system and method
US20050056783A1 (en) * 1999-07-01 2005-03-17 General Nanotechnology, Llc Object inspection and/or modification system and method
US6865927B1 (en) 2001-01-30 2005-03-15 General Nanotechnology Llc Sharpness testing of micro-objects such as miniature diamond tool tips
US20050115047A1 (en) * 2001-01-30 2005-06-02 General Nanotechnology Llc Manufacturing of micro-objects such as miniature diamond tool tips
US6931710B2 (en) 2001-01-30 2005-08-23 General Nanotechnology Llc Manufacturing of micro-objects such as miniature diamond tool tips
US7253407B1 (en) 2001-03-08 2007-08-07 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US7178387B1 (en) 2001-03-08 2007-02-20 General Nanotechnology Llc Method and apparatus for scanning in scanning probe microscopy and presenting results
US6923044B1 (en) 2001-03-08 2005-08-02 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US6787768B1 (en) 2001-03-08 2004-09-07 General Nanotechnology Llc Method and apparatus for tool and tip design for nanomachining and measurement
US7137292B1 (en) 2001-03-08 2006-11-21 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US7947952B1 (en) 2001-03-08 2011-05-24 General Nanotechnology Llc Nanomachining method and apparatus
US6880388B1 (en) 2001-03-08 2005-04-19 General Nanotechnology Llc Active cantilever for nanomachining and metrology
US6752008B1 (en) 2001-03-08 2004-06-22 General Nanotechnology Llc Method and apparatus for scanning in scanning probe microscopy and presenting results
US7196328B1 (en) 2001-03-08 2007-03-27 General Nanotechnology Llc Nanomachining method and apparatus
US6802646B1 (en) 2001-04-30 2004-10-12 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US20050058384A1 (en) * 2001-04-30 2005-03-17 General Nanotechnology Llc Low-friction moving interfaces in micromachines and nanomachines
US20060174384A1 (en) * 2001-10-19 2006-08-03 Rave Llc Scan data collection for better overall data accurancy
US7053369B1 (en) 2001-10-19 2006-05-30 Rave Llc Scan data collection for better overall data accuracy
US7547882B2 (en) 2001-10-19 2009-06-16 Rave Llc Scan data collection for better overall data accurancy
US20050172739A1 (en) * 2001-11-28 2005-08-11 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US6813937B2 (en) 2001-11-28 2004-11-09 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US7631549B1 (en) 2001-11-28 2009-12-15 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US7266998B2 (en) 2001-11-28 2007-09-11 General Nanotechnology Llc Method and apparatus for micromachines, microstructures, nanomachines and nanostructures
US9075082B2 (en) 2002-03-07 2015-07-07 Victor B. Kley Fluid delivery for scanning probe microscopy
US20040118192A1 (en) * 2002-09-09 2004-06-24 General Nanotechnology Llc Fluid delivery for scanning probe microscopy
US6998689B2 (en) 2002-09-09 2006-02-14 General Nanotechnology Llc Fluid delivery for scanning probe microscopy
US7486403B2 (en) 2006-07-20 2009-02-03 Canon Kabushiki Kaisha Droplet shape measuring method and apparatus
US20080018909A1 (en) * 2006-07-20 2008-01-24 Canon Kabushiki Kaisha Droplet shape measuring method and apparatus

Also Published As

Publication number Publication date
EP0361932A3 (de) 1991-03-06
EP0361932B1 (de) 1996-06-12
JP2896794B2 (ja) 1999-05-31
JPH02216749A (ja) 1990-08-29
CA1318980C (en) 1993-06-08
EP0361932A2 (de) 1990-04-04
DE68926648D1 (de) 1996-07-18
ATE139333T1 (de) 1996-06-15
DE68926648T2 (de) 1996-10-31

Similar Documents

Publication Publication Date Title
US5107112A (en) Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof
US5220555A (en) Scanning tunnel-current-detecting device and method for detecting tunnel current and scanning tunnelling microscope and recording/reproducing device using thereof
CA1332761C (en) Distance-controlled tunneling transducer and direct access storage unit employing the transducer
US5412641A (en) Information recording/reproducing apparatus for recording/reproducing information with probes
JP3450349B2 (ja) カンチレバー型プローブ
JP2802828B2 (ja) 情報記録担体及びこれを使用する情報処理装置
US5506829A (en) Cantilever probe and apparatus using the same
EP0383323B1 (de) Akustisches Tunnelmikroskop
EP0534406B1 (de) Mechanismus zum parallelen Halten einer Fläche und Apparat zur Verwendung eines solchen Mechanismus
JP2744346B2 (ja) 情報記録ユニットと情報記録及び／又は再生装置と情報記録及び／又は再生方法と情報記録媒体
JP3029916B2 (ja) 情報処理装置
JPH01196751A (ja) データ記憶装置
US5371727A (en) Scanning tunnel microscopy information processing system with noise detection to correct the tracking mechanism
EP0452851B1 (de) Informationsaufzeichnungs-und Wiedergabegerät
US5210714A (en) Distance-controlled tunneling transducer and direct access storage unit employing the transducer
CA2031733C (en) Method for forming probe and apparatus therefor
JPH07110969A (ja) 面合わせ方法，位置制御機構および該機構を有する情報処理装置
JPH04254930A (ja) プローブユニット及びこれを用いた情報処理装置と走査型トンネル顕微鏡
JP3023901B2 (ja) 情報記録再生装置
JPH0814481B2 (ja) 物体表面状態アクセスシステム
JPH04155633A (ja) 情報読取り及び／又は入力装置
JPH04330653A (ja) 情報再生装置及び情報記録再生装置
JPH05334737A (ja) トラッキング方法及びそれを用いた情報処理装置
Chahal Optical end point sensing and digital control of a scanning tunneling microscope
JPH0498633A (ja) マルチプローブアレイ及びそれを用いた情報処理装置、情報処理方法、走査型トンネル電流検知装置、試料表面の観察方法、マルチプローブ面の平行配置方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: CANON KABUSHIKI KAISHA, 30-2, 3-CHOME, SHIMOMARUKO

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:YANAGISAWA, YOSHIHIRO;SAKAI, KUNIHIRO;KAWADE, HISAAKI;REEL/FRAME:005166/0902

Effective date: 19890925

STCF Information on status: patent grant

Free format text: PATENTED CASE

CC Certificate of correction
FPAY Fee payment

Year of fee payment: 4

FEPP Fee payment procedure

Free format text: PAYER NUMBER DE-ASSIGNED (ORIGINAL EVENT CODE: RMPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12