US4902582A - Aluminum metallized layer formed on silicon wafer - Google Patents
Aluminum metallized layer formed on silicon wafer Download PDFInfo
- Publication number
- US4902582A US4902582A US07/300,186 US30018689A US4902582A US 4902582 A US4902582 A US 4902582A US 30018689 A US30018689 A US 30018689A US 4902582 A US4902582 A US 4902582A
- Authority
- US
- United States
- Prior art keywords
- aluminum
- metallized layer
- silicon
- weight
- metallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 47
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- 239000011651 chromium Substances 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 239000010937 tungsten Substances 0.000 claims abstract description 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 9
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010936 titanium Substances 0.000 abstract description 7
- 229910052719 titanium Inorganic materials 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 50
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 101001126084 Homo sapiens Piwi-like protein 2 Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 102100029365 Piwi-like protein 2 Human genes 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GYMWQLRSSDFGEQ-ADRAWKNSSA-N [(3e,8r,9s,10r,13s,14s,17r)-13-ethyl-17-ethynyl-3-hydroxyimino-1,2,6,7,8,9,10,11,12,14,15,16-dodecahydrocyclopenta[a]phenanthren-17-yl] acetate;(8r,9s,13s,14s,17r)-17-ethynyl-13-methyl-7,8,9,11,12,14,15,16-octahydro-6h-cyclopenta[a]phenanthrene-3,17-diol Chemical compound OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.O/N=C/1CC[C@@H]2[C@H]3CC[C@](CC)([C@](CC4)(OC(C)=O)C#C)[C@@H]4[C@@H]3CCC2=C\1 GYMWQLRSSDFGEQ-ADRAWKNSSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten silicide Chemical compound 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
Definitions
- the present invention relates to a semiconductor device comprising a metallized aluminum alloy layer, which eliminates disadvantages inherent to conventional metallized aluminum layers formed on a silicon substrate.
- the silicon substrate is subjected to a thermal treatment of 400° C. to 500° C. in the processing, such as the formation of a passivation layer, a certain amount of silicon and aluminum dissolves into each other.
- the bulky insulating layer forms an edge at the periphery of the window. Consequently, structural strain occurs in the portion of silicon underlying the edge of the insulating layer.
- the aluminum invades the diffused areas of silicon, particularly at the portion having structural strain, to form so called spikes, which lead to breakage of the p-N junction in the diffused areas. In order to prevent such defects, it has been known to add 1.0% to 2.0% by weight of silicon in the aluminum of the metallized layer.
- the oversaturated silicon precipitates, after cooling. These precipitates form a layer of silicon containing aluminum atoms on the N-type contact area of the silicon substrate.
- the precipitates act as a P-type conductor, and thus, a parasitic P-N junction is formed at the boundary of the metallized layer of aluminum and the diffused areas of silicon to increase the contact resistance, and relatively large silicon particles are formed within the aluminum layer, remaining even after the dry etching when patterning the aluminum.
- hillocks When a highly densified electric current is conducted through a metallized aluminum alloy layer at a high temperature hillocks are apt to grow and cause a deterioration in the conductivity of the metallized layer.
- the term "electromigration” describes the diffusion of metallic atoms caused by a mutual reaction between the metallic atoms and the densified electron flux which flow through the lattice of the metallic atoms.
- an electric current flows, for example, with a current density of more than 5 amperes/cm 2 at a temperature in the range of 150° to 200° C. through a metallized aluminum layer 1.0 ⁇ m in depth and 1.2 to 2.0 ⁇ m in width
- the aluminum atoms gather kinetic energy from the flowing electrons, and dislocate along the direction of the flow of the electrons.
- voids are formed in the location lacking the aluminum atoms, and the voids reduce the effective sectional area of the metallized layer and further increase the current density.
- the area around the voids is locally heated by the joule effect, and the formation of voids is accelerated, which leads to breakages in the metallized layer.
- the area into which the aluminum atoms moved becomes rich in aluminum atoms, which leads to a growth of hillocks.
- the hillocks extrude through the interlayer insulating layer formed on the metallized layer, and lead to breakage of the insulation between the metallized aluminum layer and the upper aluminum layer formed on the interlayer insulating layer.
- the reliability of a bipolar device which operates by means of the electric signals, depends on the behaviour of the electromigration.
- the increasing integration of the semiconductor device means that the size of the metallized layers must be decreased. Therefore, there is a demand for a metallized layer having an excellent resistance against electromigration, which ensures the service life of a metallized layer referred to in this specification.
- silicide such as tungsten silicide
- a semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten and phosphorus, the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element.
- the service life of a metallized layer formed on a silicon substrate corresponds to the resistance thereof against electromigration of aluminum atoms through the lattice, the grain boundary or the surface.
- the width of a metallized aluminum layer is 5 to 10 ⁇ m, which is evidently larger than the grain size of aluminum, which is usually about 2 ⁇ m, aluminum atoms diffuse dominantly through the grain boundary.
- certain elements referred to as selected elements in this specification i.e., titanium, vanadium, chromium, tungsten, and phosphorus, are scarcely dissolved in aluminum at a high temperature e.g., 500° C.
- these elements tend to precipitate not only at the grain boundary, but also within the aluminum grains, after the silicon substrate was subjected to thermal processing such as chemical vapour deposition. It is considered that these precipitates formed within the aluminum grains control the diffusion of aluminum atoms due to the electromigration thereof, and thus breakage of the aluminum pattern is retarded, so that the service life of a metallized layer is increased to about 10 times that of a metallized layer which has the same composition except for being free from these selected atoms.
- Such elongation of the service life may be obtained by including each of the selected elements in an amount set forth below.
- An amount of vanadium of at least 0.06% and less than 0.15% by weight is an amount of vanadium of at least 0.06% and less than 0.15% by weight.
- An amount of tungsten of at least 0.1% and less than 0.3% by weight is provided.
- the sputtering temperature can be raised to 300° C. without the extrusion of aluminum hillocks, contrary to the conventional sputtering temperature of 250° C., to obtain a better step coverage of the metallized aluminum layer.
- FIG. 1 is a plan view of a test pattern of a metallized layer.
- FIG. 2 is a diagram showing the relationship between the relative service life of a metallized layer and the content of a selected element.
- FIG. 3 is a diagram showing the relationship between the resistivity of a metallized layer and the content of a selected element.
- An aluminum alloy was metallized on a silicon substrate by a sputtering process, in which the target was an alloy containing a certain amount of one of the selected elements, 1% by weight of silicon, and the rest aluminum, the silicon substrate was preheated at about 300° C., the distance of the substrate from the target was 5 to 10 cm, the pressure of argon was kept at 2 to 10 mili Torr, and about 7 kW of power was applied. The temperature of the silicon substrate was kept at about 200° C. An aluminum alloy layer about 1 ⁇ m in thickness was metallized on a thermally oxidized silicon layer. Then, a test chip 1.5 ⁇ m in width and 800 ⁇ m in length for measurement, as shown in FIG. 1, was produced from the metallized aluminum alloy by conventional dry etching.
- the test chip was kept at about 250° C., and an electric current of 1 ⁇ 10 6 A/cm 2 was conducted between electrodes A-A', and the voltage was measured between electrodes B-B'. After a long time had passed, the diffusion of aluminum atoms was accelerated and the resistance of the test chip grew gradually larger, to finally become infinite, i.e., to be in an open state.
- We define the failure time of the test chip by the time required for increasing the resistance, e.g., twice that of the initial resistance, and the electromigration resistance service life of the metallized layer by the average failure time obtained with a number of test chips.
- the relative service life of the chips is estimated as good when this is more than 10 times that of the standard test chip containing 1.0% by weight of silicon, but not containing the selected element.
- the relative service life of the test chip containing either zirconium or molybdenum exhibited a value lower than 10 times that of the standard test chip. Therefore, we deleted these two elements from the invention of this continuation in part application.
- FIG. 3 which shows the relationship between the electric resistivity and the content of the selected element of the metallized aluminum alloy containing 1.0% by weight of silicon, the content of less than 0.3% by weight of the selected element has little affect on the resistivity of the aluminum alloy.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59217398A JPS6197823A (ja) | 1984-10-18 | 1984-10-18 | 半導体装置の製法 |
JP59-217398 | 1984-10-18 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07024071 Continuation | 1987-03-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
US4902582A true US4902582A (en) | 1990-02-20 |
Family
ID=16703561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/300,186 Expired - Fee Related US4902582A (en) | 1984-10-18 | 1989-01-23 | Aluminum metallized layer formed on silicon wafer |
Country Status (4)
Country | Link |
---|---|
US (1) | US4902582A (ja) |
EP (1) | EP0178995A3 (ja) |
JP (1) | JPS6197823A (ja) |
KR (1) | KR900000442B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4999160A (en) * | 1989-12-04 | 1991-03-12 | Micron Technology, Inc. | Aluminum alloy containing copper, silicon and titanium for VLSI devices |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2591351B2 (ja) * | 1990-12-25 | 1997-03-19 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法 |
EP0534441B1 (en) * | 1991-09-27 | 1997-12-10 | Hitachi Metals, Ltd. | Target for reactive sputtering and film-forming method using the target |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128636A (en) * | 1982-10-19 | 1984-05-02 | Motorola Ltd | Silicon-aluminium alloy metallization of semiconductor substrate |
US4527184A (en) * | 1982-12-01 | 1985-07-02 | Siemens Aktiengesellschaft | Integrated semiconductor circuits with contact interconnect levels comprised of an aluminum/silicon alloy |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175764A (ja) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | 半導体装置 |
-
1984
- 1984-10-18 JP JP59217398A patent/JPS6197823A/ja active Pending
-
1985
- 1985-10-15 EP EP85401995A patent/EP0178995A3/en not_active Withdrawn
- 1985-10-18 KR KR1019850007705A patent/KR900000442B1/ko not_active IP Right Cessation
-
1989
- 1989-01-23 US US07/300,186 patent/US4902582A/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2128636A (en) * | 1982-10-19 | 1984-05-02 | Motorola Ltd | Silicon-aluminium alloy metallization of semiconductor substrate |
US4527184A (en) * | 1982-12-01 | 1985-07-02 | Siemens Aktiengesellschaft | Integrated semiconductor circuits with contact interconnect levels comprised of an aluminum/silicon alloy |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4999160A (en) * | 1989-12-04 | 1991-03-12 | Micron Technology, Inc. | Aluminum alloy containing copper, silicon and titanium for VLSI devices |
Also Published As
Publication number | Publication date |
---|---|
KR860003651A (ko) | 1986-05-28 |
KR900000442B1 (ko) | 1990-01-30 |
EP0178995A2 (en) | 1986-04-23 |
EP0178995A3 (en) | 1988-01-13 |
JPS6197823A (ja) | 1986-05-16 |
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