US3761677A - Apparatus for producing single crystals including halogen lamps aligned with the common major axes of a spheroidal reflector pair - Google Patents

Apparatus for producing single crystals including halogen lamps aligned with the common major axes of a spheroidal reflector pair Download PDF

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Publication number
US3761677A
US3761677A US00222777A US3761677DA US3761677A US 3761677 A US3761677 A US 3761677A US 00222777 A US00222777 A US 00222777A US 3761677D A US3761677D A US 3761677DA US 3761677 A US3761677 A US 3761677A
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United States
Prior art keywords
major axes
radiant energy
spheroidal
aligned
surface portions
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Expired - Lifetime
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US00222777A
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English (en)
Inventor
T Mizutani
T Yamamoto
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NEC Corp
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Nippon Electric Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0014—Devices wherein the heating current flows through particular resistances
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Definitions

  • ABSTRACT For an apparatus for growing single crystals by the floating zone method, a pair of congruent prolate spheroidal reflectors for radiant energy are disposed outwardly of each other with their major axes aligned and with the distance between their axially inwardly disposed foci being less than the diameter of a molten zone placed at the location of these foci.
  • a pair of congruent halogen lamps for supplying the radiant energy are held inside the respective spheroidal surfaces with their logitudinal axes parallel to the major axes and with the center of each lamp placed, apart from the axially outwardly disposed focus, less than a quarter of the longitudinal dimension of the lamps and a half of the transverse dimension thereof in the directions parallel and perpendicular to the major axes, respectively.
  • This invention relates to an apparatus for growing single crystals by the floating zone method with radiant energy supplied from a pair of halogen lamps and concentrated onto the sample floating zone by a pair of inwardly reflecting, prolate spheroidal surface portions.
  • an apparatus for heating a sample with concentrated radiant energy which comprises a pair of inwardly reflecting, substantially prolate spheroidal surface portions disposed outwardly of each other, said spheroidal surface portions having aligned major axes and a common focus, a source of radiant energy placed at one of the two foci of said spheroidal surface portions that are conjugate to said common focus, and means for holding a sample at the other of the two conjugate foci of said spheroidal surface portions.
  • the sample may be typically a polycrystalline rod that is subjected to the floating zone method to be grown into a single crystal.
  • a similar apparatus which further comprises a second, similar pair of prolate spheroidal surface portions disposed outwardly of each other and of the first-mentioned pair of spheroidal surface portions, one of the two foci of said second pair of spheroidal surface portions that are conjugate to the common focus of these spheroidal surface portions being placed at the above-mentioned other focus of the two conjugate foci of the first-mentioned pair of spheroidal surface portions, and a second source of radiant energy placed at the other of the two conjugate foci of said second pair of spheroidal surface portions.
  • each source of radiant energy may be a helically wound filament of a halogen lamp disposed perpendicular
  • an apparatus for producing a single crystal by the floating zone technique which includes a heating device comprising a prolate spheroidal reflector and a halogen lamp placed at one focus of said reflector, the light emitted by said lamp being concentrated by said reflector at the other focus of said reflector and which is characterized in that said reflector has a ratio of the minor diameter to the major diameter in the range of 0.87 to 0.96 and that said apparatus further comprises a tube of a refractory material translucent for said light for accommodating the floating zone and its vicinity and for substantially defining a chamber together with said reflector and means for ventilating said chamber at a rate of at least once every 2 seconds.
  • the invention revealed in the first-mentioned three applications is directed to an apparatus whereby the radiant energy is concentrated on an image that is in the best possible congruency with the source or sources of radiant energy. It is, however, desirable to simplify the design of the apparatus and to lengthen the lift of the halogen lamp or lamps employed as the radiation source means. Furthermore, a restricted high temperature zone in the direction perpendicular to the aligned major axes should be provided in some applications, such as application to the floating zone technique.
  • the primary object of the invention described in the lattermentioned applications is to lengthen the life of the halogen lamp and to attain as uniform an azimuthal temperature distribution as possible around the crystal being grown. It is, however, desirable to further improve the azimuthal temperature distribution. In addition, the amount of the radiant energy concentrated at the sample must be increased in order to obtain a large single crystal and/or a single crystal of a higher melting point substance.
  • an apparatus for heating a molten zone with concentrated radiant energy including a pair of inwardly reflecting, substantially prolate spheroidal surface portions disposed outwardly of each other having their major axes substantially aligned with each other, and a pair of elongated sources of radiant energy wherein the improvement comprises:
  • the apparatus further comprises a tube of a refractory material translucent for said radiant energy for accommodating said molten zone and for substantially defining a chamber together with said spheroidal surface portions, said tube being disposed perpendicular to said aligned major axes, and still further comprises means for forcibly ventilating said chamber.
  • FIG. 1 is a schematic side view of an embodiment of the present invention, with the heating means shown in axial vertical section;
  • FIG. 2 shows the radiant energy distribution around a halogen lamp
  • FIG. 3 shows the azimuthal energy distribution around the molten zone
  • FIGS. 4 and 5 are fragmentary axial vertical sectional views of modified holding means for the halogen lamps.
  • the prolate spheroidal surfaces are preferably congruent and have substantially aligned major axes and a substantially common inwardly disposed focus F or F
  • the inwardly reflecting surfaces are preferably covered with gold either by'plating or by evaporation with a view to raising the stability of the surfaces.
  • Two elongated sources of radiant energy 2 and 2 are placed at the outwardly disposed foci F and F, of the spheroidal surfaces which are conjugate to the substantially common focus F or F
  • Each of the sources 2 and 2' is preferably a quartz halogen lamp having a helically wound tungsten filament 3 or 3 and an accompanying power supply and holding means 4 or 4' and 5 or 5'.
  • the filements 3 and 3' are the actual sources of the ra' diant energy.
  • a seed crystal 11 is held by a lower chuck 12 attached to a vertical lower shaft 13.
  • a rod of raw material or a polycrystalline rod 14 is similarly held by an upper chuck 15 attached to a substantially aligned vertical upper shaft 16.
  • the abutting surface portions of the seed 11 and the rod 14 are heated by the radiant energy concentrated at the substantially common focus F, or F, to form a molten zone 17.
  • the lower shaft 13 is rotatably and vertically slidably supported by a lower bearing means 21 and driven by a lower motor 22 through a pulley 23, a belt 24, and another pulley 25 as indicated by an arrow 100.
  • the upper shaft 16 is rotatably and vertically slidably supported by an upper bearing means 26 and driven by an upper motor 27 through a pulley 28, a belt 29, and another pulley 30 in the direction indicated by an arrow 101.
  • the driving means for the lower and the upper shafts l3 and 16 are carried by a vertically movable support 31 having a female screw 32 engaging a male screw 33 that is driven through a reduction gear 34 by a feed motor 35 to feed the support 31 very slowly along guide rails 36 and 36', with the sliders 37, 37', 37", and 37 of the support 31 sliding therealong.
  • the rotation given to the molten zone 17 not only improves the azimuthal uniformity of heating but also provides the stirring action which in turn improves the homogeneity of the composition within the molten zone 17.
  • the lower and the upper shafts l3 and 16 are carried by the support 31 with the relative position unchanged and are fed downwardly relative to the heating means so that the molten zone 17 may travel upwardly relative to the polycristallyne rod 14 leaving the growing single crystal on the seed 11.
  • the apparatus further comprises a quartz tube 40 passing through the congruent spheroidal surface portions 1 and 1' adjacent to the mating ends.
  • the tube 40 accommadates the molten zone 17 and its adjacent area and surrounds the adjacent end portions of the lower and the upper shafts 13 and 16. It is provided at the lower and the upper ends with a gas inlet 41 and a gas outlet 42, respectively. Sufficient clearances for the thermal expansion should be left between the tube 40 and the prolate spheroidal surface portions 1 and l'.
  • the tube 40 and the prolate spheroidal surface portions 1 and 1 thus define a substantially annular chamber.
  • the apparatus further comprises pipes 51, 52, 53, and 54 for ventilating the chamber and ducts 61 and 61' for cooling the prolate spheroidal reflectors 1 and 1'.
  • a solid-line curve 71 shows the relative radiant energy incident on the peripheral surface of the molten zone 17 as simulated by an electronic computer with respect to an apparatus in accordance with the present invention.
  • a dashed-line curve 72 illustrates the similar energy as likewise simulated in respect of a one-prolatespheroidal-reflector apparatus.
  • the latter-mentioned apparatus gives rise to an azimuthally periodec temperature variation of as much as i0.6 C in the molten zone 17 even though the zone 17 is rotated at a rate of 30 RPM.
  • Simulation by means of an electronic computer has further revealed that the total amount of the radiant energy incident on the molten zone and the aximuthal distribution of such energy is nevertheless acceptable even if the distance between the closely spaced foci F, and F, is less than the dimension of the molten zone in the direction of the aligned major axes and if the center of each elongated halogen lamp is spaced from the focus F or F by an amount less than a quarter of the longitudinal dimension of the lamp, or more exactly, the length of filament coil in the direction parallel with the aligned major axes and lessthan a half of the diameter of the source in the direction perpendicular to the aligned major axes.
  • the center of the halogen lamp may be displaced either inwardly or outwardly relative to the focus F or F in the direction parallel to the aligned major axes. Similarly, the center of the halogen lamp may be displaced relative to the focus F or F along a plane perpendicular to the aligned major axes.
  • the ventilating means serves to keep the quartz tubes of the halogen lamps 2 and 2' within the desired temperature range of 200 C through l,0O0 C. Otherwise, the filaments 3 and 3 will snap within several minutes after being switched on due to the disturbance caused to the halogen cycle because the quartz tubes of the lamps 2 and 2' are heated above l,300 C on account of the additional heating resulting from the radiant energy concentrated back from the molten zone 17 at the halogen lamps 2 and 2'.
  • the power supply and holding means 4 or 4 which extends near to the tube 40 may be formed into the shapes depicted therein.
  • these supply and holding means are subjected to the heat from the halogen lamp and the molten zone 17 and should consequently be made of a refractory material.
  • FIG. 1 it is possible to effectively cool the power supply and holding means 4 and 4 by circulating cooling water therethrough as symbolically depicted'by an arrow 102.
  • the tube 40 for accommodating the molten zone may be made of any refractory material that is translucent to the radiant energy. It will be understood by those skilled in the art that numerous variations and modifications of the embodiments disclosed above are possible. However, the scope of the invention is defined by the following claims only and not by the description above.
  • a tube of a refractory material that is translucent with respect to said radiant energy for accommodating said molten zone and for substantially defining a chamber together with said spheroidal surface portions, said tube being disposed perpendicular to spheroidal surface portions have common mating ends.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Radiation-Therapy Devices (AREA)
US00222777A 1971-02-06 1972-02-02 Apparatus for producing single crystals including halogen lamps aligned with the common major axes of a spheroidal reflector pair Expired - Lifetime US3761677A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46004812A JPS5029405B1 (enrdf_load_stackoverflow) 1971-02-06 1971-02-06

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US3761677A true US3761677A (en) 1973-09-25

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US (1) US3761677A (enrdf_load_stackoverflow)
JP (1) JPS5029405B1 (enrdf_load_stackoverflow)
GB (1) GB1349104A (enrdf_load_stackoverflow)
NL (1) NL168278C (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3956611A (en) * 1973-12-17 1976-05-11 Ushio Electric Inc. High pressure radiant energy image furnace
US4184065A (en) * 1977-04-28 1980-01-15 Nichiden Machinery, Limited Heating apparatus having ellipsoidal reflecting mirror
US4419169A (en) * 1978-11-01 1983-12-06 Baxter Travenol Laboratories, Inc. Apparatus for radiant heat sealing of balloon onto catheter shaft
US4564744A (en) * 1983-05-03 1986-01-14 Etat Francais represented by Delegation Generale Integrated infrared thermostat resonator
US4581248A (en) * 1984-03-07 1986-04-08 Roche Gregory A Apparatus and method for laser-induced chemical vapor deposition
US4581520A (en) * 1982-09-07 1986-04-08 Vu Duy Phach Heat treatment machine for semiconductors
US4694777A (en) * 1985-07-03 1987-09-22 Roche Gregory A Apparatus for, and methods of, depositing a substance on a substrate
WO1991002833A1 (en) * 1989-08-18 1991-03-07 United States Department Of Energy Apparatus and method for containerless directional thermal processing of materials in low-gravity environments
US5038395A (en) * 1988-03-05 1991-08-06 Dornier Gmbh Reflector furnace
US20030142722A1 (en) * 2000-06-26 2003-07-31 Takeshi Azami Method and apparatus for measuring temperature
US20070131162A1 (en) * 2004-02-05 2007-06-14 Nec Machinery Corporation Single crystal growing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190300A (ja) * 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE498501C (de) * 1927-06-28 1930-05-23 Edmund Schroeder Verfahren zum Schweissen und Loeten mit insbesondere elektrisch erzeugter Strahlungswaerme
US3427435A (en) * 1967-06-02 1969-02-11 Webb James E High speed infrared furnace
US3659332A (en) * 1969-05-05 1972-05-02 Spectra Instr Inc Method of preparing electrical cables for soldering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE498501C (de) * 1927-06-28 1930-05-23 Edmund Schroeder Verfahren zum Schweissen und Loeten mit insbesondere elektrisch erzeugter Strahlungswaerme
US3427435A (en) * 1967-06-02 1969-02-11 Webb James E High speed infrared furnace
US3659332A (en) * 1969-05-05 1972-05-02 Spectra Instr Inc Method of preparing electrical cables for soldering

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Fixture For Infrared Sealing of Metal to Glass, Hentz et al., Western Electric Technical Digest No. 3, July, 1966, pages 15 and 16. *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3956611A (en) * 1973-12-17 1976-05-11 Ushio Electric Inc. High pressure radiant energy image furnace
US4184065A (en) * 1977-04-28 1980-01-15 Nichiden Machinery, Limited Heating apparatus having ellipsoidal reflecting mirror
US4419169A (en) * 1978-11-01 1983-12-06 Baxter Travenol Laboratories, Inc. Apparatus for radiant heat sealing of balloon onto catheter shaft
US4581520A (en) * 1982-09-07 1986-04-08 Vu Duy Phach Heat treatment machine for semiconductors
US4564744A (en) * 1983-05-03 1986-01-14 Etat Francais represented by Delegation Generale Integrated infrared thermostat resonator
US4581248A (en) * 1984-03-07 1986-04-08 Roche Gregory A Apparatus and method for laser-induced chemical vapor deposition
US4694777A (en) * 1985-07-03 1987-09-22 Roche Gregory A Apparatus for, and methods of, depositing a substance on a substrate
US5038395A (en) * 1988-03-05 1991-08-06 Dornier Gmbh Reflector furnace
WO1991002833A1 (en) * 1989-08-18 1991-03-07 United States Department Of Energy Apparatus and method for containerless directional thermal processing of materials in low-gravity environments
US20030142722A1 (en) * 2000-06-26 2003-07-31 Takeshi Azami Method and apparatus for measuring temperature
US7033070B2 (en) * 2000-06-26 2006-04-25 Nec Corporation Method and apparatus for measuring temperature
US20070131162A1 (en) * 2004-02-05 2007-06-14 Nec Machinery Corporation Single crystal growing apparatus

Also Published As

Publication number Publication date
NL168278B (nl) 1981-10-16
DE2205558A1 (enrdf_load_stackoverflow) 1972-10-05
DE2205558B2 (de) 1976-02-19
JPS5029405B1 (enrdf_load_stackoverflow) 1975-09-23
NL168278C (nl) 1982-03-16
GB1349104A (en) 1974-03-27
NL7201462A (enrdf_load_stackoverflow) 1972-08-08

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