US3735321A - Thermistor - Google Patents

Thermistor Download PDF

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Publication number
US3735321A
US3735321A US00154271A US3735321DA US3735321A US 3735321 A US3735321 A US 3735321A US 00154271 A US00154271 A US 00154271A US 3735321D A US3735321D A US 3735321DA US 3735321 A US3735321 A US 3735321A
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US
United States
Prior art keywords
thermistor
doped
powder
mass
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00154271A
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English (en)
Inventor
H Bovenkerk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of US3735321A publication Critical patent/US3735321A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable

Definitions

  • U.S. Pat. No. 3,435,398 discloses the doping of cubic boron nitride with beryllium, sulfur, selenium, boron, silicon, germanium, etc., and the use of a single crystal thereof in a thermistor device.
  • Both boron nitride abrasive, hereinafter referred to as CBN, and diamond must be formed under conditions of very high temperature and pressure.
  • Silicon carbide on the other hand, can be formed at atmospheric pressure under high temperature conditions. Thus, in order to add dopant to silicon carbide it is only necessary to have the dopant material, which may be a boron compound, present in the melt.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Ceramic Products (AREA)
US00154271A 1971-06-18 1971-06-18 Thermistor Expired - Lifetime US3735321A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15427171A 1971-06-18 1971-06-18

Publications (1)

Publication Number Publication Date
US3735321A true US3735321A (en) 1973-05-22

Family

ID=22550694

Family Applications (1)

Application Number Title Priority Date Filing Date
US00154271A Expired - Lifetime US3735321A (en) 1971-06-18 1971-06-18 Thermistor

Country Status (8)

Country Link
US (1) US3735321A (fr)
JP (1) JPS5414317B1 (fr)
BE (1) BE784524A (fr)
CH (1) CH539324A (fr)
DE (1) DE2228941A1 (fr)
FR (1) FR2142017B1 (fr)
GB (1) GB1394394A (fr)
SE (1) SE379114B (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467309A (en) * 1981-04-30 1984-08-21 Hitachi, Ltd. High temperature thermistor
US4712085A (en) * 1984-10-30 1987-12-08 Tdk Corporation Thermistor element and method of manufacturing the same
US4806900A (en) * 1986-09-26 1989-02-21 Naoji Fujimori Thermistor and method for producing the same
US5081438A (en) * 1989-04-11 1992-01-14 Sumitomo Electric Industries, Ltd. Thermistor and its preparation
US5512873A (en) * 1993-05-04 1996-04-30 Saito; Kimitsugu Highly-oriented diamond film thermistor
US20040172885A1 (en) * 2002-02-26 2004-09-09 Stewart Middlemiss Semiconductive polycrystalline diamond, cutting elements incorporating the same and bit bodies incorporating such cutting elements
US20130049159A1 (en) * 2011-08-31 2013-02-28 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL181156C (nl) * 1975-09-25 1987-06-16 Gen Electric Werkwijze voor de vervaardiging van een metaaloxide varistor.
US4633051A (en) * 1983-11-23 1986-12-30 Advanced Semiconductor Materials America, Inc. Stable conductive elements for direct exposure to reactive environments

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609470A (en) * 1949-07-22 1952-09-02 Gen Electric Resistance materials and elements
US3435399A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
US3435398A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
US3503902A (en) * 1966-09-14 1970-03-31 Hitachi Ltd Method for producing temperature sensitive resistor comprising vanadium oxide

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2609470A (en) * 1949-07-22 1952-09-02 Gen Electric Resistance materials and elements
US3435399A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
US3435398A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
US3503902A (en) * 1966-09-14 1970-03-31 Hitachi Ltd Method for producing temperature sensitive resistor comprising vanadium oxide

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467309A (en) * 1981-04-30 1984-08-21 Hitachi, Ltd. High temperature thermistor
US4712085A (en) * 1984-10-30 1987-12-08 Tdk Corporation Thermistor element and method of manufacturing the same
US4806900A (en) * 1986-09-26 1989-02-21 Naoji Fujimori Thermistor and method for producing the same
US5081438A (en) * 1989-04-11 1992-01-14 Sumitomo Electric Industries, Ltd. Thermistor and its preparation
US5512873A (en) * 1993-05-04 1996-04-30 Saito; Kimitsugu Highly-oriented diamond film thermistor
US20040172885A1 (en) * 2002-02-26 2004-09-09 Stewart Middlemiss Semiconductive polycrystalline diamond, cutting elements incorporating the same and bit bodies incorporating such cutting elements
US20130049159A1 (en) * 2011-08-31 2013-02-28 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
US8710615B2 (en) * 2011-08-31 2014-04-29 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
CH539324A (de) 1973-07-15
FR2142017A1 (fr) 1973-01-26
JPS5414317B1 (fr) 1979-06-06
SE379114B (fr) 1975-09-22
GB1394394A (en) 1975-05-14
BE784524A (fr) 1972-10-02
FR2142017B1 (fr) 1977-12-23
DE2228941A1 (de) 1972-12-21

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