US3649354A - Method of producing layers of grains particularly monolayers of grains embedded in a filler - Google Patents

Method of producing layers of grains particularly monolayers of grains embedded in a filler Download PDF

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US3649354A
US3649354A US629999A US3649354DA US3649354A US 3649354 A US3649354 A US 3649354A US 629999 A US629999 A US 629999A US 3649354D A US3649354D A US 3649354DA US 3649354 A US3649354 A US 3649354A
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grains
filler
layer
support
electrode
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US629999A
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Ties Siebolt Te Velde
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US Philips Corp
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Definitions

  • Trifari 5 7 ABSTRACT A method of manufacturing an electrical device in which a liquid electrically insulating filler substance is applied to a layer of electrically active grains which filler is allowed to contract thus exposing the peaks of the grains after which it is allowed to harden.
  • the filler is preferably a resin hardenable by polymerization or bypolycondensation in a liquid solution with a volatile solvent, for example polyurethane.
  • the invention relates to a method of producing a layer of grains embedded in a filler, preferably a layer one grain thick, termed hereinafter monolayer of grains, particularly for manufacturing electrically operative devices such as electrode systems, for example, a semiconductor electrode system in which the grains and the tiller are applied to the support, while at least on the side of the layer remote from the support sur face parts of the grains are made free of the tiller.
  • the invention furthermore relates to a layer of grains obtained by said method, particularly for use in an electrically operating device, for example, a semiconductor device.
  • the layers of grains of the kind set forth may be employed for many purposes. Such layers of grains are particularly important for use in electrically active devices, for example, electrode systems in which a layer of grains of a medium electrically active in such a device in an insulating filler is employed.
  • capacitors comprising one or more layers of grains of ceramic material having a high dielectric constant and having a size substantially corresponding to the thickness of the layer, said grains being embedded in an insulating filler.
  • the two electrodes of the capacitor are provided each on one side of such a layer or of a number of stacked layers.
  • the grains may have the shape of scales which may be provided previously, if desired, with a metal coating on either side.
  • the layer may be formed directly on a metal foil as a substrate.
  • a difficulty involved is that a direct contact between the metal electrodes and the grains should be obtained as far as possible without the interposition of the tiller. Since the dielectric constant of the tiller is usually low with respect to that of the ceramic material, even a very thin film of filler between the grains and the electrode may markedly reduce the capacitance per unit of surface.
  • layers of grains preferably layers one grain thick comprising grains of an active medium in a filler may be used for other purposes than a capacitor, for example, in radiation detectors in which radiation energy is incident to a photosensitive layer in which it produces electric voltage differences or impedance variations, which are derived therefrom by means of the electrodes applied to the layer.
  • the present invention has for its object inter alia to provide a method which ensures that at least on the side of the layer remote from the support surface portions of the grains are free of the filler.
  • the invention is based on the fact that a very great number of materials suitable for use as fillers can be brought into the liquid state, in which they tend to contract.
  • the filler is first used in the liquid state, so that the liquid tiller applied to the support contracts between the grains on the support and surface portions of the grains are free of the tiller on the side of the layer remote from the support, after which the tiller is hardened.
  • the method according to the invention may be carried out by means of a great variety of materials as a filler, which may be employed in the liquid state in various ways.
  • materials such as paraffin and solid esters of saturated fatty acids or thermoplastic substances, for example on the basis of polyvinyl resins an polyamides such as nylon.
  • thermohardening and basically also cold-hardening materials are appropriate substances, which are hardened from the liquid state by polymerization or polycondensation.
  • materials hardening under the action of gaseous reactants may be chosen, for example, so-called drying oils and other liquid resins hardening under the action of oxygen.
  • this range of optional fillers is not limited to the substances mentioned above. In principle, it is possible for example to use a solution of the filler, for example, in evaporable solvent.
  • the change from the liquid state to the hardened state may be attended with a volume variation of the filler, particularly a reduction of the volume.
  • the quantity offiller used in the liquid state has to be chosen so that during the contraction between the grains, the heads of the grains are sufficiently liberated, while after hardening of the tiller the layer of grains forms a porefree assembly, while the tiller itself anchors the grains because it embraces the grains sufficiently as far as above the center.
  • a filler which adheres, in the liquid state, only sparingly to the surface of the grains concerned.
  • organic fillers of apolar nature or a predominantly apolar nature have, in general, poor adhesion to surfaces of grains or inorganic materials. in the liquid state these substances tend to form a more or less convex meniscus between the grains during the contraction.
  • Fusible substances of this type are, for example, paraffin and solid esters of saturated fatty acids, such as fats and nondefonning kinds of wax. It will be appreciated that the quantity of filler may be comparatively large, while, if a satisfactory cohesion of the layer of grains by means of the tiller alone is desired the meniscus of the liquid between the grains may extend at least to some extent above the centers of the grains, it being even allowed for the filler to project locally above the heads of the grains.
  • a filler may be employed, which has such an adhesive force with respect to the surface of the grains, that in the liquid state the tiller tends to creep slightly up the surface of the grains.
  • the quantity of filler is preferably chosen so that the liquid level between the grains is lower than the level of the grain heads. In this case it is even permissible for the level of the filler between the grains to extend only to half the height of the grains or to a level below said half, whereas the filler covers nevertheless part of the grains surface above the center of the grain.
  • the quantity of residual filler subsequent to the evaporation of the solvent depends furthermore upon the concentration of this filler in the solution. It will be obvious that by a correct choice of the degree of dilution of the tiller in the solution the quantity of filler in the layer can be controlled.
  • a liquid state will first be maintained, when the solvent is evaporated, until at the temperature of evaporation a state of saturation is reached or at least in which the tiller with the solvent is still capable of flowing.
  • the liquid can retract between the grains to an extent such that surface parts of the grains are set free, which also depends upon the quantity of liquid in this state. It should be taken into account that upon a further evaporation of the solvent an appreciable shrinkage may occur, which should certainly not be such that there is a risk of cracks or pores is involved or that the required cohesion or, as the case may be, the rigidity of the layer might get lost.
  • the filler is preferably brought to the liquid state by heat after the evaporation of the solvent, the filler retracting between the grains to an extent such that surface parts of the grains become free of the filler, after which the tiller is hardened.
  • Hardening may be obtained by simple solidification during cooling or, when thermohardening materials are employed, by thermal treatment.
  • the solvent is preferably evaporated at a temperature at which these constituents hardly start reacting with each other or at which these reactions occur only so slowly that after the evaporation of the solvent the liquid state is maintained, after which the filler is hardened, if necessary, at a higher temperature.
  • Fillers hardening in the cold state may also be used, provided the liquid state is maintained sufficiently long for enabling the manufacture of the layer of grains and the retraction of the filler between the grains. in all these cases shrinkage, if any, is smaller than in the case in which a solvent is evaporated.
  • the invention may be carried out by means of small size grains, for example, thicknesses of not more than 200p.
  • the method is particularly suitable for the use of grains of to 50 which provide correspondingly thin layers 1 grain thick.
  • the method according to the invention provides a layer of grains, whose surfaces are free of the filler on the side remote from the support, it is possible to provide the grains on this side directly with a layer of an electrode material, which is in intimate contact with the grains.
  • the free grain surfaces may be treated afterwards, for example they may be selectively etched, as the case may be prior to the application of an electrode layer.
  • a second similar layer of the filler may be applied to a quantity such that in the liquid state the filler also retracts between the grains, leaving surface parts of the grains Ul'lcovered.
  • the quantity of the filler first applied should then not be chosen too large, while it is furthermore not necessary for the first filler to satisfy alone the requirements of cohesion and rigidity of the final layer.
  • the last-mentioned method may be particularly advantageous with the use of grains consisting of a core of one material and an envelope of a further material.
  • the core and the envelope may consist of different constituents, for example difierent semiconductor materials.
  • the core and the envelope may have the same main constituent but having different properties of conductivity, for example by different doping. Particularly important is, for example, the use of semiconductor grains whose envelope forms a rectifying junction, for example, a Phi-junction with the core.
  • the free surface parts of the grains may be subjected to an etching treatment, so that the envelope is locally removed.
  • an electrode layer may be applied to the uncovered surface parts of the grains, which layer cannot produce short circuits with the envelope.
  • the quantity of this filler may be chosen so that the level of the filler occupies 30 to 80 percent of the height of the grain, while the grains are embraced by the filler up to above their centers, while surface parts of the grains are free of the filler.
  • the filler In the nonhardened state the filler can be heated to such an extent that at the temperature involved it gradually hardens from the liquid state, said liquid state being maintained for a sufficient time to allow the retraction of the filler between the grains.
  • Layers of grains manufactured by the method according to the invention may be employed for many purposes, which are not restricted to the uses referred to above.
  • Other possibilities of use are, for example, in temperature-dependent resistors, particularly for use in bolometers, nonlinear resistors, diodes and probably in other not yet mentioned semiconductor electrode systems.
  • FIGS. ll'and 2 are vertical sectional views of successive stages of the method according to the invention.
  • FlGS. 3 to '7 are vertical sectional views of successive stages of the manufacture of an electrode system comprising a layer l grain thick by a further method according to the invention and FIGS. to it are vertical sectional views of successive stages of a still further method according to the invention.
  • the method starts by a layer of grains 3, which are stuck by means of an adhesive layer 2 to the surface of a support i (see FIG. ll).
  • the grains preferably consist of a medium active in such an electrode system, for example of the type described above.
  • the support may consist of an electrically conductive material, for example, a metal foil, there being then used a conductive paste for the adhesive layer, for example, silver paste.
  • the grains may also be applied to the support by means of a soluble adhesive layer in order to remove the layer of grains afterwards, when the filler is applied and in order to obtain free grain surfaces on the side facing the support, as is proposed in my copending US. Pat. application Ser. No. 569,248.
  • the support with the grains adhering thereto is then dipped in molten paraffin.
  • the liquid paraffin adheres with difficulty to grain material suitable as media for electrode systems, for example ceramic materials and semiconductor materials.
  • the liquid paraffin contracts in the space between the grains, while it flows back from surface parts 6 of the grains located on the side of the layer remote from the support (see FIG. 2).
  • the melt recontracted between the grains assumes the form of a convex meniscus 7.
  • By cooling the molten paraffin is caused to solidify so that the support it has a layer of grains 3 embedded in a paraffin filler 5. Since on the side of the resultant layer remote from the support the surface parts 6 of the grains are free of the filler, an electrode can then be arranged on said side, which electrode establishes a good contact with the grains.
  • a filler which can contract in the liquid state between the grains, but which adheres to the grains surface so that it forms a concave meniscus, whereas it leaves surface parts of the grains free on the side remote from the support.
  • the support is formed by a flat glass plate 11 to which by means of an adhesive layer of gelatin l2 photocoriductive grains 33 of a diameter of 30 to 40 [.t of cadmium sulphide are adhered (see EH13).
  • a solution of not yet hardened polyurethane materials is employed.
  • the commercially available Desmopheen 1200 and Desmodur L are used, which have to be mixed with each other for producing polyurethane. Ethylacetate is then added, which reduces the viscosity.
  • the quantities used of 45 g. of Desmopheen 1200, 45 g. of ethylacetate and 65 g. of Desmodur L" are mixed and the resultant mixture is caused to flow across the surface of the support with the adhering cadmium sulphide grains until a liquid film 14 is formed throughout the graincovered surface.
  • the polyrethane gradually hardens by polycondensation of the raw materials used, so that the filler becomes solid.
  • the assembly is then cooled.
  • an electrode layer for example a transparent electrode can be applied to the grains.
  • Such an electrode layer should, in general, be very thin in order to be sufficiently pervious to the radiation; but this involves a high lateral resistance.
  • the special grinding method described in said copending Application permits of grinding off the projecting parts of the metal layer 18, located on the grains, whereas the lower parts of the layer 18 are maintained (see FlG. s it is then possible to use a grinding material, the grains of which are so large with respect to the distances between the adjacent grains i3 that the grinding material can not penetrate to the deeper parts of the layer 18.
  • an abrasive applied to a support may be employed, the grains of which have a diameter which is considerably smaller than the average diameter of the grains of the layer.
  • the good conducting layer it is then removed from the surface parts 19 of the grains without, however, the contact between the layer and the grains l3 being interrupted.
  • a thin, radiation-pervious electrode may then be deposited by evaporation on the surface, if desired, the free surface parts 19 of the grains may be rendered better conductive, for example by means of a glow discharge.
  • the side of the layer of grains remote from the support is provided with an electrode which allows irradiation of the photoconductive grains and which has yet a low lateral resistance.
  • a layer of radiation-pervious, plastic substance for example polyurethane may be applied to the side of the layer of grains remote from the support (said layer is not shown; it may have a thickness of 50 ,u).
  • the layer of grains can "then be removed from the support ll, while, if necessary, residual material of the adhesive layer can be washed away.
  • the surface parts 20 of the grains initially countersunk in the adhesive layer are free of the filler, so that these surface parts can be provided with a second electrode, for example by the vapor deposition of an indium layer 21 (see FIG. 7).
  • the electrode system obtained may serve as a photoconducting cell.
  • the material of the metal layer 18 may be copper instead of iridium and a thin, transparent copper layer may be applied by vapor deposition to the free surface parts 19, in which case a photo-voltaic cell is obtained, which may be used as a solar battery.
  • the materials of the core and the envelope may be quite different; for example the core may consist of semiconductor material, and the envelope may consist of a metal or another semiconductor material; the core and the envelope may, however, also consist of the same semiconductor material but of different conductivity types.
  • These grains are stuck to the surface of a support 41 by means of an adhesive layer 42 (see FIG. 8).
  • the grains consist of a core 43 and an envelope ll of materials having different electric properties. in the manner described above the support with the grains is dipped in a solution of the filler, which solution is, however, more diluted.
  • the solvent is evaporated and the filler is hardened by heating. In the liquid state preceding the hardening process the tiller retracts between the grains, as is indicated in FIG. 9 by 45.
  • the grains are then subjected to an etching treatment, so that on the side remote from the support the material of the envelope is removed and the core l3 obtains a free surface 46. On the side facing the support the material of the envelope is maintained. lf electrode material were applied to the surface parts 46, for example by vapor deposition, this material could, as shown in the case of FIG. 10, still establish a contact with the edge of the material Ml of the envelope, so that the core 43 and the envelope 44 would be short circuited.
  • the support with the grains is again dipped in a diluted solution of the filler.
  • the same filler or a different may be chosen as before.
  • the new filler is hardened, for example, by heating While in the liquid state preceding the hardening process the filler retracts also from the upper sides of the grains, but to a lesser extent than the tiller 35. In this manner also the edges of the envelopes 44 are covered by the new filler 47 (see FIG. 11). Since, however, surface parts as of the grains are free of the fillers, an electrode layer can be applied similarly to the method described above to establish a satisfactory contact with the core material 43, whereas it is insulated from the envelope material 54.
  • the electrode for the envelope surface may be formed by a conducting adhesive layer 42 or after the solution of the adhesive layer 512 the electrode may be applied, for example by vapor deposition.
  • an electrical device comprising a granular layer of electrically active grains bound together by an electrically insulating filler and having electrode means therefor with at least one of the electrodes having electrically conductive portions on exposed surface parts of the grains, the improvement comprising the steps of applying to a layer of said grains on a support an electrically insulating filler substance in the liquid state, contracting the filler between the grains whereby its level between the grains lies below the grain peaks exposing the latter, and thereafter hardening the filler with the grain peaks exposed.
  • the filler comprises a resin hardenable by polymerization or polycondensation in a liquid solution with a volatile solvent, said filler being hardened after evaporation of the solvent.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Thermistors And Varistors (AREA)
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US629999A 1966-04-14 1967-04-11 Method of producing layers of grains particularly monolayers of grains embedded in a filler Expired - Lifetime US3649354A (en)

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NL666604960A NL154876B (nl) 1966-04-14 1966-04-14 Werkwijze voor het vervaardigen van elektrisch werkzame inrichtingen met monokorrellagen met actieve korrels in een isolerende vulstof, alsmede volgens deze werkwijze verkregen elektrisch werkzame inrichting.

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US (1) US3649354A (fr)
JP (1) JPS4412777B1 (fr)
AT (1) AT287807B (fr)
BE (1) BE697073A (fr)
CH (1) CH522276A (fr)
DE (1) DE1621761C3 (fr)
DK (1) DK126609B (fr)
ES (1) ES339179A1 (fr)
FR (1) FR1519072A (fr)
GB (2) GB1186076A (fr)
IL (1) IL27796A (fr)
NL (1) NL154876B (fr)
NO (1) NO123291B (fr)
OA (1) OA02587A (fr)
SE (1) SE338624B (fr)

Cited By (15)

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US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US3954466A (en) * 1975-01-02 1976-05-04 Xerox Corporation Electrostatographic photoreceptor
US3980494A (en) * 1975-01-02 1976-09-14 Beatty Charles L Method of reducing friction in blade cleaning of imaging surfaces
US4015985A (en) * 1975-04-09 1977-04-05 Xerox Corporation Composite xerographic photoreceptor with injecting contact layer
US4074010A (en) * 1975-05-12 1978-02-14 Lyle V. Anderson Ceramic-paint coatings
US5240493A (en) * 1992-01-16 1993-08-31 Institute Of Gas Technology Process for preparing submicron/nanosize ceramic powders from precursors incorporated within a polymeric foam
US5338334A (en) * 1992-01-16 1994-08-16 Institute Of Gas Technology Process for preparing submicron/nanosize ceramic powders from precursors incorporated within a polymeric foam
US5549716A (en) * 1991-09-02 1996-08-27 Tdk Corporation Process for manufacturing integrated circuits using an automated multi-station apparatus including an adhesive dispenser and apparatus therefor
US6042894A (en) * 1994-05-10 2000-03-28 Hitachi Chemical Company, Ltd. Anisotropically electroconductive resin film
US6657225B1 (en) * 1998-03-25 2003-12-02 Seiko Epson Corporation Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
US20050263895A1 (en) * 2004-05-31 2005-12-01 Ryosuke Usui Circuit device and manufacturing method thereof
US9209019B2 (en) 2013-09-05 2015-12-08 Diftek Lasers, Inc. Method and system for manufacturing a semi-conducting backplane
US9224851B2 (en) 2011-10-14 2015-12-29 Diftek Lasers, Inc. Planarized semiconductor particles positioned on a substrate
US9455307B2 (en) 2011-10-14 2016-09-27 Diftek Lasers, Inc. Active matrix electro-optical device and method of making thereof
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof

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US2201196A (en) * 1939-06-27 1940-05-21 Carborundum Co Manufacture of granular coated materials
US2567186A (en) * 1943-11-12 1951-09-11 Minnesota Mining & Mfg Inverse method of forming particulate coated sheets
US2904613A (en) * 1957-08-26 1959-09-15 Hoffman Electronics Corp Large area solar energy converter and method for making the same
US3031344A (en) * 1957-08-08 1962-04-24 Radio Ind Inc Production of electrical printed circuits
US3108021A (en) * 1961-06-12 1963-10-22 Int Rectifier Corp Cadmium sulfide photo-cell
US3291578A (en) * 1963-11-04 1966-12-13 Gen Electric Metallized semiconductor support and mounting structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2201196A (en) * 1939-06-27 1940-05-21 Carborundum Co Manufacture of granular coated materials
US2567186A (en) * 1943-11-12 1951-09-11 Minnesota Mining & Mfg Inverse method of forming particulate coated sheets
US3031344A (en) * 1957-08-08 1962-04-24 Radio Ind Inc Production of electrical printed circuits
US2904613A (en) * 1957-08-26 1959-09-15 Hoffman Electronics Corp Large area solar energy converter and method for making the same
US3108021A (en) * 1961-06-12 1963-10-22 Int Rectifier Corp Cadmium sulfide photo-cell
US3291578A (en) * 1963-11-04 1966-12-13 Gen Electric Metallized semiconductor support and mounting structure

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US3954466A (en) * 1975-01-02 1976-05-04 Xerox Corporation Electrostatographic photoreceptor
US3980494A (en) * 1975-01-02 1976-09-14 Beatty Charles L Method of reducing friction in blade cleaning of imaging surfaces
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Also Published As

Publication number Publication date
BE697073A (fr) 1967-10-16
SE338624B (fr) 1971-09-13
OA02587A (fr) 1970-05-05
DE1621761B (fr)
GB1186075A (en) 1970-04-02
DE1621761A1 (de) 1972-04-13
AT287807B (de) 1971-02-10
NL154876B (nl) 1977-10-17
DK126609B (da) 1973-07-30
DE1621761C3 (de) 1981-02-05
CH522276A (de) 1972-06-15
JPS4412777B1 (fr) 1969-06-09
ES339179A1 (es) 1968-04-16
IL27796A (en) 1971-11-29
GB1186076A (en) 1970-04-02
NL6604960A (fr) 1967-10-16
NO123291B (fr) 1971-10-25
FR1519072A (fr) 1968-03-29

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