US3573454A - Method and apparatus for ion bombardment using negative ions - Google Patents

Method and apparatus for ion bombardment using negative ions Download PDF

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Publication number
US3573454A
US3573454A US723026A US3573454DA US3573454A US 3573454 A US3573454 A US 3573454A US 723026 A US723026 A US 723026A US 3573454D A US3573454D A US 3573454DA US 3573454 A US3573454 A US 3573454A
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ions
specimen
ion
bombardment
bombarding
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US723026A
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English (en)
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Cristian A Andersen
Henry J Roden
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Applied Research Laboratories Inc
EIDP Inc
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Applied Res Lab
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Assigned to JAMES TALCOTT, INC., LLOYDS BANK INTERNATIONAL LIMITED reassignment JAMES TALCOTT, INC. SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: APPLIED RESEARCH LABORATORIES, INC., ARL APPLIED RESEARCH LABORATORIES, S.A.
Assigned to E.I. DU PONT DE NEMOURS AND COMPANY reassignment E.I. DU PONT DE NEMOURS AND COMPANY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: BUCKFELDER, JOHN J., SCHLEINITZ, HENRY M.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/028—Negative ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
    • H01J49/142—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers using a solid target which is not previously vapourised
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Definitions

  • This invention relates to a novel method of ion bombardment enabling the achievement of improved and heretofore unachievable results in processes that include the step of bombarding a material with charged particles.
  • the secondary electrons seem to be usually of relatively low energy so that, as the surface under bombardment starts to charge in the positive direction due to the departure of secondary electrons in greater numbers than the arriving negative ions, enough of the secondary electrons are electrostatically attracted back to the surface to establish an equilibrium condition.
  • the small positive potential at the point of impact of the bombarding ions is insignificant compared to the acceleration imparted to the bombarding ions, which is usually in the range of about l,000 to 20,000 electron volts.
  • FIG. l is a chart illustrating the secondary yield of Al ions from an aluminum specimen in response to bombardment with positive oxygen ions
  • FIG. 2 is a chart on a comparable scale of the yield of Al ions from an alumina specimen in response to bombardment by negatively charged oxygen ions;
  • FIG. 3 is a schematic block diagram of apparatus according to the invention.
  • an impinging ion produces the same effect in a material regardless of its charge in respect of sputtering of material from the specimen and the release of secondary electrons.
  • the impinging ion is simply a submicroscopic bullet delivering energy in accordance with its velocity and mass. It appears to become electrically discharged as it approaches or meets the surface.
  • the polarity of the charge carried by the impinging ions therefore, appears to be immaterial in the bombardment of electrically conductive specimens.
  • the ions are electrically negative or positive, the sputtering results are substantially identical for similar beam currents and particle energies. Either positive or negative ions may be chosen on the basis of collateral considerations such as the characteristics of the ion source.
  • FlG. ll illustrates the output of secondary positive aluminum ions of atomic weight 27 sputtered from an aluminum specimen in response to bombardment by a beam of 0 ions (nascent oxygen, atomic weight l6) in an ion microprobe of the type described in the hereinabove identified copending application of Helmut I. Liebl. It is seen that within a few seconds of the start of the bombardment, the output of sputtered ions reaches a relatively high and stable value.
  • lFlG. 2 is a chart on the same scale as the chart of HG. ll showing the emission of secondary Al ions from a specimen of relatively pure alumina (A1 0 under bombardment in the same instrument by a beam of 0 ions. in both cases, the current in the ion beam was about 3X10 amperes, the accelerating potential was about 8 kilovolts, and the ion beam was defocused to cover an area of between about 20 and 50 1?.
  • the negative ions may be produced in any desired way. It is known, for example, that by properly positioning the outlet orifice of an ion source of the type known as a duoplasmatron, negative ions can be drawn from it in relatively large numbers. No claim is made in this application relative to the negative ions per se, or to the means for producing them.
  • the invention is directed chiefly to the concept of using negative ions for bombarding materials, especially for bombarding electrically insulating materials, for any desired purpose.
  • the practice of the invention in spectrochemical work is not is any way limited in respect of the selection of sputtered ions for analysis, or of the methods used for analyzing the sputtered ions or other materials.
  • FIG. 3 schematically represents the ion microprobe described in the hereinabove-identified box labeled FOCUS- lNG indicates a system of lenses for producing an ionic image of the source upon the surface of the specimen.
  • the secondary electrons are ejected from the bombarded surface at relatively low velocities, and it is desirable to provide a collector electrode (H6. 3) fairly close to the surface to ensure against the accumulation of an excessively large negative space charge adjacent to the surface.
  • Electrodes suitable for this purpose are normally present in all ion bombardment instruments equipped for mass spectrometric analysis of secondary ions, and instruments of this type ordinarily need no special modification for collecting the secondary electrons. in other types of ion bombardment apparatus, it may be desirable to add a simple, positively biased electrode spaced within an inch or so of the specimen to be bombarded.
  • the spacing and bias are not critical.
  • Method of implanting particles of atomic dimension in a specimen of an electrically insulating material comprising the step of bombarding the specimen with negatively charged ions, imparting energy to the ions at a value selected to cause them to drive secondary electrons out of the specimen to remove negative charges at a rate to compensate fully for the negative charges carried to the surface of the specimen by the ions thereby to avoid the accumulation of an excessive negative electrical charge on the surface of the specimen.
  • Method of sputtering an electrically insulating material comprising bombarding the material with negatively charged ions to cause particles of the material to be ejected from it, imparting energy to the ions at a value selected to cause them to drive secondary electrons out of the specimen to remove negative charges carried to the surface of the specimen by the ions thereby to avoidthe accumulation of an excessive negative electrical charge on the surface of the specimen.
  • Method of analyzing an electrically insulating material comprising the steps of bombarding a specimen of the material with negatively charged ions with enough energy to sputter secondary ions from the material, imparting energy to the ions at a value selected to cause them to drive secondary electrons out of the specimen to remove negative charges at a rate to compensate fully for the negative charges carried to the surface of the specimen by the ions thereby to avoid the accumulation of an excessive negative electrical charge on the surface of the specimen, and mass spectrometrically analyzing the sputtered ions.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Vapour Deposition (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Electron Tubes For Measurement (AREA)
US723026A 1968-04-22 1968-04-22 Method and apparatus for ion bombardment using negative ions Expired - Lifetime US3573454A (en)

Applications Claiming Priority (1)

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US72302668A 1968-04-22 1968-04-22

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US3573454A true US3573454A (en) 1971-04-06

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US (1) US3573454A (enrdf_load_stackoverflow)
JP (1) JPS567292B1 (enrdf_load_stackoverflow)
DE (1) DE1920183C3 (enrdf_load_stackoverflow)
FR (1) FR2006648A1 (enrdf_load_stackoverflow)
GB (1) GB1259505A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3917491A (en) * 1974-01-08 1975-11-04 Us Army Methods for fabricating resistant MOS devices
US4110625A (en) * 1976-12-20 1978-08-29 International Business Machines Corporation Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays
US4132614A (en) * 1977-10-26 1979-01-02 International Business Machines Corporation Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate
US4416725A (en) * 1982-12-30 1983-11-22 International Business Machines Corporation Copper texturing process
US4587458A (en) * 1984-02-17 1986-05-06 Ti (Group Services) Limited Controlling current density
USRE33344E (en) * 1977-04-22 1990-09-18 Finnigan Corporation Apparatus and method for detecting negative ions
US5432670A (en) * 1990-08-23 1995-07-11 International Business Machines Corporation Generation of ionized air for semiconductor chips
US20030102436A1 (en) * 2000-03-20 2003-06-05 Gerard Benas-Sayag Column simultaneously focusing a particle beam and an optical beam
US11031205B1 (en) 2020-02-04 2021-06-08 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin Device for generating negative ions by impinging positive ions on a target

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2947868A (en) * 1959-07-27 1960-08-02 Geophysics Corp Of America Mass spectrometer
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3336475A (en) * 1964-02-05 1967-08-15 Electro Optical Systems Inc Device for forming negative ions from iodine gas and a lanthanum boride contact ionizer surface
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2947868A (en) * 1959-07-27 1960-08-02 Geophysics Corp Of America Mass spectrometer
US3336475A (en) * 1964-02-05 1967-08-15 Electro Optical Systems Inc Device for forming negative ions from iodine gas and a lanthanum boride contact ionizer surface
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3341754A (en) * 1966-01-20 1967-09-12 Ion Physics Corp Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Zhurnal Tekhnicheskoi Fiziki, Vol. 30, No. 1, Fogel et al., pgs. 63 73, January, 1960, 250 49.5(9) *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3917491A (en) * 1974-01-08 1975-11-04 Us Army Methods for fabricating resistant MOS devices
US4110625A (en) * 1976-12-20 1978-08-29 International Business Machines Corporation Method and apparatus for monitoring the dose of ion implanted into a target by counting emitted X-rays
USRE33344E (en) * 1977-04-22 1990-09-18 Finnigan Corporation Apparatus and method for detecting negative ions
US4132614A (en) * 1977-10-26 1979-01-02 International Business Machines Corporation Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate
US4416725A (en) * 1982-12-30 1983-11-22 International Business Machines Corporation Copper texturing process
US4587458A (en) * 1984-02-17 1986-05-06 Ti (Group Services) Limited Controlling current density
US5432670A (en) * 1990-08-23 1995-07-11 International Business Machines Corporation Generation of ionized air for semiconductor chips
US20030102436A1 (en) * 2000-03-20 2003-06-05 Gerard Benas-Sayag Column simultaneously focusing a particle beam and an optical beam
US20060097198A1 (en) * 2000-03-20 2006-05-11 Gerard Benas-Sayag Column simultaneously focusing a particle beam and an optical beam
US7297948B2 (en) 2000-03-20 2007-11-20 Credence Systems Corporation Column simultaneously focusing a particle beam and an optical beam
US11031205B1 (en) 2020-02-04 2021-06-08 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin Device for generating negative ions by impinging positive ions on a target

Also Published As

Publication number Publication date
FR2006648A1 (enrdf_load_stackoverflow) 1970-01-02
DE1920183A1 (de) 1970-08-27
GB1259505A (enrdf_load_stackoverflow) 1972-01-05
DE1920183C3 (de) 1981-10-29
DE1920183B2 (de) 1977-02-10
JPS567292B1 (enrdf_load_stackoverflow) 1981-02-17

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