US20240003040A1 - Plating device - Google Patents

Plating device Download PDF

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Publication number
US20240003040A1
US20240003040A1 US18/037,157 US202118037157A US2024003040A1 US 20240003040 A1 US20240003040 A1 US 20240003040A1 US 202118037157 A US202118037157 A US 202118037157A US 2024003040 A1 US2024003040 A1 US 2024003040A1
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US
United States
Prior art keywords
diaphragm
solution
plating
hole
anolyte chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US18/037,157
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English (en)
Inventor
Yuji Uchiumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MITOMO SEMICON ENGINEERING Co Ltd
Original Assignee
MITOMO SEMICON ENGINEERING Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MITOMO SEMICON ENGINEERING Co Ltd filed Critical MITOMO SEMICON ENGINEERING Co Ltd
Assigned to MITOMO SEMICON ENGINEERING CO., LTD. reassignment MITOMO SEMICON ENGINEERING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UCHIUMI, YUJI
Publication of US20240003040A1 publication Critical patent/US20240003040A1/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008—Current shielding devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/04—Removal of gases or vapours ; Gas or pressure control
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors

Definitions

  • the present invention relates to a plating equipment in which an insoluble anode is used.
  • a so-called jet type plating equipment is known as an equipment that is used in the case of performing a plating process on such an object to be plated.
  • this jet type plating equipment includes: an opening part in which an object to be plated can be placed; a solution supply piping that supplies a plating solution toward the object to be plated; and an anode that is arranged so as to be opposed to the object to be plated.
  • This jet type plating equipment performs a plating process while supplying the plating solution from the solution supply piping toward the object to be plated.
  • the jet type plating equipment can perform a uniform plating process on a surface to be plated of the object to be plated, and can perform the plating process while sequentially replacing object to be platies arranged in the opening part.
  • the jet type plating equipment is widely utilized as an equipment suitable for small-lot production and plating process automation.
  • the jet type plating equipment including the diaphragm has various merits compared with the case where the soluble anode is used. For example, the consumption amounts of additives in the plating solution can be decreased. Moreover, maintenance such as anode replacement, which is required in the case where the soluble anode is used, is not required, and hence the productivity can be improved.
  • jet type plating equipment in which the insoluble anode is used has various merits as described above compared with the case where the soluble anode is used, under present circumstances in the plating field, the utilization of this jet type plating equipment has made little progress, except for precious metal plating and copper plating.
  • an upper catholyte chamber is formed on the upper side of the diaphragm by the object to be plated placed in the opening part and the diaphragm
  • a lower anolyte chamber is formed on the lower side of the diaphragm by the plating tank and the diaphragm.
  • Patent Literature 1 of the related art because a pressure loss at the time of the solution supply to the lower anolyte chamber is large, the supply flow rate to the lower anolyte chamber cannot be more a lot, and there is a tendency that the a lot of air bubbles generated from the insoluble anode cannot be sufficiently discharged. Moreover, in Patent Literature 2, although the air bubbles can be efficiently discharged in the lower anolyte chamber, the solution supplied to the upper catholyte chamber and the lower anolyte chamber cannot be separated, and hence the merits of the insoluble anode cannot be sufficiently realized.
  • the present invention has been made under the above-mentioned circumstances, and has an object to provide a jet type plating equipment in which an insoluble anode is used and merits of the insoluble anode can be sufficiently enjoyed.
  • the present invention provides a plating equipment having a plating tank including: an opening part in which an object to be plated is placed; a solution supply piping that supplies a plating solution toward the object to be plated; an insoluble anode that is arranged so as to be opposed to the object to be plated; and an diaphragm for to separate the object to be plated and the insoluble anode from each other, an diaphragm outer peripheral end being fixed to a plating tank inner wall, a through-hole being provided in an diaphragm center, a hole peripheral end of the through-hole being fixed to the solution supply piping, the diaphragm being thus arranged so as to be inclined upward in an outer circumferential direction from the solution supply piping, in which: a silicon ring is firmly fixed to each of the outer peripheral end of the diaphragm and a hole edge of the through-hole of the diaphragm; the solution supply piping supplies the plating solution to
  • the different solutions respectively supplied to the lower anolyte chamber and the upper catholyte chamber do not directly mix with each other.
  • the silicon ring be firmly fixed to each of the outer peripheral end of the diaphragm and the hole edge of the through-hole of the diaphragm.
  • the annular flow passage including the solution ejection hole in the upper part thereof is provided in the outer circumference of the solution supply piping, and the lower anolyte chamber solution is supplied from the solution ejection hole to the lower anolyte chamber in the plating tank, the flow that moves from around the through-hole of the diaphragm toward the outer circumferential direction of the diaphragm is formed in the lower anolyte chamber solution.
  • gas (air bubbles) generated from the insoluble anode can be efficiently discharged from the lower anolyte chamber.
  • the silicon ring is firmly fixed to the diaphragm in the plating equipment of the present invention
  • a process called simultaneous casting of the silicon ring is performed in the following manner.
  • the diaphragm is fixed to a mold frame that can press from above and below the outer peripheral end of the diaphragm having the through-hole provided in the center thereof and the hole edge of the through-hole.
  • An adhesive (primer) is applied to the outer peripheral end portion and the hole edge portion to each of which the silicon ring is to be firmly fixed. Silicon is injected into the portions to which the adhesive has been applied. Then, the mold frame is pressurized.
  • the silicon ring is firmly fixed to each of the outer peripheral end of the diaphragm and the hole edge of the through-hole of the diaphragm.
  • a diaphragm whose diaphragm base material is a polyethylene terephthalate resin and whose diaphragm material is a polyvinylidene fluoride resin-based material. Moreover, it is preferable that the water permeability be equal to or less than 0.1 mL/min/cm 2 .
  • the lower anolyte chamber solution be supplied toward a circumferential direction of the annular flow passage provided in the outer circumference of the solution supply piping.
  • the lower anolyte chamber solution is caused to flow in the lower anolyte chamber while rotating and flowing. Accordingly, a pressure loss at the time of the solution supply can be decreased, the supply amount can be increased, and gas (air bubbles) generated from the insoluble anode can be highly efficiently discharged from the lower anolyte chamber.
  • the plating equipment of the present invention include a flow rate controller that controls a supply flow rate of the lower anolyte chamber solution supplied to the lower anolyte chamber.
  • a flow rate controller that controls a supply flow rate of the lower anolyte chamber solution supplied to the lower anolyte chamber.
  • the present invention allows a jet type plating equipment to perform a plating treatment that sufficiently has advantages of an insoluble anode enjoyed.
  • FIG. 1 is a cross-sectional view of a plating equipment of a present embodiment
  • FIG. 2 is a plan view of the plating equipment of the present embodiment
  • FIG. 3 is a cross-sectional view of the plating equipment taken along A-A;
  • FIG. 4 is a plan view of a diaphragm
  • FIG. 5 illustrates a simultaneous casting process
  • FIG. 6 is a line graph obtained as a result of examining a concentration change in each additive.
  • FIG. 1 is a cross-sectional view of a plating equipment of the present embodiment
  • FIG. 2 is a plan view of the plating equipment.
  • a torus-shape diaphragm 2 having a through-hole in the center thereof is set in a plating tank 1 .
  • This diaphragm 2 has a diaphragm outer peripheral end fixed to a plating tank inner wall, and a hole edge of the through-hole is fixed to a leading end of a solution supply piping 3 , whereby the diaphragm 2 is inclined upward in the outer circumferential direction from the solution supply piping 3 (in the plan view of FIG. 2 , illustration of the diaphragm is omitted).
  • An annular flow passage 4 is provided in an outer circumference of the solution supply piping 3 .
  • a mesh-like insoluble anode 5 is arranged in a bottom part of the plating tank 1 (in the plan view of FIG. 2 , illustration of the insoluble anode is omitted).
  • an upper catholyte chamber U and a lower anolyte chamber D are formed in the plating tank 1 .
  • a plating solution is supplied to the upper catholyte chamber U from the solution supply piping 3 .
  • a lower anolyte chamber solution is supplied to the lower anolyte chamber D from a solution ejection hole 6 provided to an upper part of the annular flow passage 4 .
  • FIG. 3 is a cross-sectional view taken along a line A-A′ in FIG. 2 .
  • the solution supply to the annular flow passage 4 is performed by a lower anolyte chamber solution supply piping 7 provided to the plating tank bottom part, and this lower anolyte chamber solution supply piping 7 is configured to enable the solution supply toward the circumferential direction of the annular flow passage 4 .
  • the lower anolyte chamber solution that has been supplied from the lower anolyte chamber solution supply piping 7 rotates and flows in the annular flow passage 4 to flow in the lower anolyte chamber D from the solution ejection hole 6 .
  • the lower anolyte chamber solution that has flowed in the lower anolyte chamber D forms a flow that spreads in an outer circumference of the diaphragm 2 along a lower surface of the diaphragm 2 .
  • the plating solution that has been supplied to the upper catholyte chamber D is guided to and discharged from a solution discharge outlet 8 provided to the plating tank 1 , and the lower anolyte chamber solution that has been supplied to the lower anolyte chamber D is guided to and discharged from a solution discharge outlet 9 provided to the plating tank 1 .
  • FIG. 4 is a plan view of the diaphragm 2 .
  • a silicon ring 10 is firmly fixed to each of an outer peripheral end 2 ′ of the diaphragm 2 and a hole edge of a through-hole 2 ′′.
  • This silicon ring 10 is firmly fixed through a simultaneous casting process of the silicon ring.
  • description is given here of the case where the silicon ring is firmly fixed to the outer peripheral end of the diaphragm
  • FIG. 5 is a cross-sectional view concerning the simultaneous casting process in this case.
  • An upper mold 21 and a lower mold 22 are arranged in the outer peripheral end of the diaphragm 2 , and the upper mold 21 and the lower mold 22 are configured to be capable of sandwiching therebetween an end part of the outer peripheral end of the diaphragm 2 along the outer peripheral end thereof, whereby the diaphragm 2 is fixed.
  • the upper mold 21 and the lower mold 22 are processed such that a ring formation space 23 is formed in the outer peripheral end of the diaphragm 2 when the upper mold 21 and the lower mold 22 sandwich the diaphragm 2 therebetween.
  • An injection passage 24 for injecting silicon resin into the ring formation space 23 is formed in the upper mold 21 .
  • the diaphragm to which the silicon ring was firmly fixed as illustrated in FIG. 4 was manufactured with the use of such a mold frame as described above.
  • This test was carried out in the following manner: a copper sulfate plating solution containing three types of additives (commercial products) called an accelerator (promotor), a suppressor (inhibitor), and a leveler (smoother) was supplied to the upper catholyte chamber corresponding to a cathode side and a copper sulfate plating solution containing no additive was supplied to the lower anolyte chamber corresponding to an anode side.
  • the solution compositions are shown below.
  • a mesh-like insoluble anode made of Pt—Ti was used, and a commercial product (film material: a fluorine-based resin, thickness: 0.12 mm, water permeability: 0.08 mL/min/cm 2 25° C.) was used as the diaphragm.
  • An 8-inch wafer made of PCB was used as the object to be plated.
  • This wafer made of PCB is a object to be plated that is a glass epoxy base material to which copper foil is attached and which is processed into a wafer-like circular shape.
  • FIG. 6 illustrates a concentration change in each additive in each of the upper catholyte chamber supply solution and the lower anolyte chamber supply solution
  • FIG. 6 illustrates the concentration change in the order of the accelerator (promotor), the suppressor (inhibitor), and the leveler from the top by means of line graphs.
  • the vertical axis represents an additive concentration (mL/L)
  • the horizontal axis represents a concentration measurement period
  • data points represented by squares represent the concentration of the upper catholyte chamber supply solution
  • data points represented by circles represent the concentration of the lower anolyte chamber supply solution.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
US18/037,157 2020-11-20 2021-10-25 Plating device Pending US20240003040A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020193072A JP2022081869A (ja) 2020-11-20 2020-11-20 めっき装置
JPP2020-193072 2020-11-20
PCT/JP2021/039194 WO2022107551A1 (ja) 2020-11-20 2021-10-25 めっき装置

Publications (1)

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US20240003040A1 true US20240003040A1 (en) 2024-01-04

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Application Number Title Priority Date Filing Date
US18/037,157 Pending US20240003040A1 (en) 2020-11-20 2021-10-25 Plating device

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US (1) US20240003040A1 (ja)
JP (1) JP2022081869A (ja)
KR (1) KR20230127995A (ja)
CN (1) CN116457505A (ja)
WO (1) WO2022107551A1 (ja)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000273693A (ja) 1999-03-24 2000-10-03 Electroplating Eng Of Japan Co カップ式めっき装置
JP3568455B2 (ja) * 2000-06-14 2004-09-22 大日本スクリーン製造株式会社 基板メッキ装置
JP5414968B2 (ja) 2005-11-14 2014-02-12 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学撮像システムの測定装置および操作方法
JP4822858B2 (ja) * 2005-11-22 2011-11-24 日本エレクトロプレイテイング・エンジニヤース株式会社 めっき装置
JP2020132948A (ja) * 2019-02-20 2020-08-31 トヨタ自動車株式会社 金属皮膜の成膜装置
JP2020180357A (ja) * 2019-04-26 2020-11-05 株式会社荏原製作所 アノードホルダ及びめっき装置

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JP2022081869A (ja) 2022-06-01
CN116457505A (zh) 2023-07-18
WO2022107551A1 (ja) 2022-05-27
KR20230127995A (ko) 2023-09-01

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