US20220278134A2 - Array substrate and method of manufacturing the same, and display apparatus - Google Patents

Array substrate and method of manufacturing the same, and display apparatus Download PDF

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Publication number
US20220278134A2
US20220278134A2 US17/298,493 US202017298493A US2022278134A2 US 20220278134 A2 US20220278134 A2 US 20220278134A2 US 202017298493 A US202017298493 A US 202017298493A US 2022278134 A2 US2022278134 A2 US 2022278134A2
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Prior art keywords
array substrate
base
conductive
conductive line
oxide semiconductor
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US20220028901A1 (en
US12021091B2 (en
Inventor
Bin Lin
Yong Zeng
Yazhou HUO
Liangliang LI
Zhouyu CHEN
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BOE Technology Group Co Ltd
Fuzhou BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Fuzhou BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an array substrate and a method of manufacturing the same, and a display apparatus.
  • An oxide semiconductor material is used as active layers in oxide thin film transistors, which has good uniformity, and is especially suitable for large-area displays.
  • a method of manufacturing an array substrate includes: providing a base; forming a plurality of conductive lines on a side of the base; forming an oxide semiconductor film on a side of the plurality of conductive lines away from the base, the oxide semiconductor film covering the plurality of conductive lines and being in direct contact with at least one conductive line, and the at least one conductive line being configured to discharge static electricity generated in the oxide semiconductor film; and patterning the oxide semiconductor film by using a photoetching process to remove a portion of the oxide semiconductor film that is in direct contact with the at least one conductive line, and form an oxide semiconductor layer including active layers of a plurality of oxide thin film transistors, the oxide semiconductor layer and the at least one conductive line being insulated from each other.
  • the method of manufacturing the array substrate further includes: before forming the oxide semiconductor film, forming a gate conductive layer including gates of the plurality of oxide thin film transistors, the gate conductive layer and the plurality of conductive lines being located on the same side of the base; forming a gate insulating film on a side of both the plurality of conductive lines and the gate conductive layer away from the base, the gate insulating film covering the plurality of conductive lines and the gate conductive layer; and patterning the gate insulating film to form a gate insulating layer with at least one via hole, an orthogonal projection of the at least one via hole on the base being at least partially overlapped with an orthogonal projection of the at least one conductive line on the base.
  • the oxide semiconductor film is in direct contact with the at least one conductive line through the at least one via hole.
  • a portion of a boundary of the orthogonal projection of the at least one conductive line on the base coincides with a portion of a boundary of the orthogonal projection of the at least one via hole on the base.
  • a material of the plurality of conductive lines includes a metal material.
  • the plurality of conductive lines and the gate conductive layer are formed in a same patterning process.
  • the method of manufacturing the array substrate further includes: forming a source-drain conductive layer on a side of the oxide semiconductor layer away from the base.
  • the source-drain conductive layer includes sources and drains of the plurality of oxide thin film transistors that are in direct contact with respective active layers.
  • the array substrate has a display area and a bezel area located beside the display area.
  • the source-drain conductive layer further includes at least one auxiliary lead that is in direct contact with the at least one conductive line.
  • the at least one auxiliary lead and the at least one conductive line are located in the bezel area.
  • the at least one conductive line is configured to transmit a common voltage signal to the display area, or to perform an electrostatic protection on the array substrate.
  • the at least one auxiliary lead is configured to be connected in parallel with the at least one conductive line, so as to reduce a resistance of the at least one conductive line.
  • a material of the oxide semiconductor film includes one of zinc oxide, indium oxide, stannic oxide, indium zinc oxide, zinc tin oxide, aluminum zinc oxide, yttrium zinc oxide, indium tin zinc oxide, indium gallium zinc oxide, and indium aluminum zinc oxide.
  • an orthogonal projection of the oxide semiconductor layer on the base is at most partially overlapped with an orthogonal projection of the at least one conductive line on the base.
  • an array substrate in another aspect, includes: a base; a plurality of conductive lines disposed on a side of the base; and a plurality of oxide thin film transistors.
  • the plurality of oxide thin film transistors and the plurality of conductive lines are disposed on the same side of the base.
  • Each oxide thin film transistor includes a gate, an active layer, a source, and a drain. Active layers of the plurality of oxide thin film transistors are obtained by patterning an oxide semiconductor film that is in direct contact with at least one of the plurality of conductive lines, and the active layers and the at least one conductive line are insulated from each other.
  • the array substrate further includes a gate insulating layer disposed between gates and active layers of the plurality of oxide thin film transistors.
  • the gate insulating layer has at least one via hole.
  • An orthogonal projection of the at least one via hole on the base is at least partially overlapped with an orthogonal projection of the at least one conductive line on the base.
  • the oxide semiconductor film is in direct contact with the at least one conductive line through the at least one via hole.
  • the array substrate further includes at least one auxiliary lead disposed on a side of the gate insulating layer away from the base.
  • the at least one auxiliary lead is in direct contact with the at least one conductive line through the at least one via hole.
  • the array substrate further includes at least one auxiliary lead made of a same material and arranged in a same layer as the source and the drain.
  • the at least one auxiliary lead is in direct contact with the at least one conductive line.
  • an orthogonal projection of the at least one auxiliary lead on the base is at least partially overlapped with the orthogonal projection of the at least one conductive line on the base.
  • a routing direction of the at least one auxiliary lead is same as a routing direction of the at least one conductive line.
  • the array substrate further includes a passivation layer disposed on a side of both sources and drains of the plurality of oxide thin film transistors away from the base. A portion of the passivation layer is located in the at least one via hole, and is in direct contact with the at least one conductive line.
  • the array substrate has a display area and a bezel area located beside the display area.
  • the at least one conductive line is located in the bezel area.
  • the at least one conductive line includes a common electrode line or an electrostatic protection line.
  • the common electrode line is configured to transmit a common voltage signal to the display area.
  • the electrostatic protection line is configured to perform an electrostatic protection on the array substrate.
  • the gate and the plurality of conductive lines are made of a same material and arranged in a same layer.
  • a display apparatus includes the array substrate as described in any of the above embodiments.
  • the display apparatus further includes an opposite substrate arranged opposite to the array substrate, and a liquid crystal layer disposed between the array substrate and the opposite substrate.
  • the display apparatus further includes a plurality of light-emitting devices disposed on a side of the plurality of oxide thin film transistors in the array substrate away from the base in the array substrate.
  • FIG. 1 is a structural diagram showing an electrostatic accumulation in an oxide semiconductor film, in accordance with the related art
  • FIG. 2 is a flow diagram of a method of manufacturing an array substrate, in accordance with some embodiments of the present disclosure
  • FIG. 3 is a flow diagram of a method of manufacturing another array substrate, in accordance with some embodiments of the present disclosure.
  • FIGS. 4 a to 4 g are schematic diagrams showing a manufacturing process of an array substrate, in accordance with some embodiments of the present disclosure
  • FIGS. 5 a to 5 l are schematic diagrams showing a manufacturing process taken along the 0 - 0 ′ direction in the manufacturing process shown in FIGS. 4 a to 4 g;
  • FIG. 6 is a structural diagram of an array substrate, in accordance with some embodiments of the present disclosure.
  • FIG. 7 is a structural diagram of another array substrate, in accordance with some embodiments of the present disclosure.
  • FIG. 8 is a structural diagram of a display apparatus, in accordance with some embodiments of the present disclosure.
  • FIG. 9 is a structural diagram of another display apparatus, in accordance with some embodiments of the present disclosure.
  • the term “comprise” and other forms thereof such as the third-person singular form “comprises” and the present participle form “comprising” are construed as an open and inclusive meaning, i.e., “including, but not limited to”.
  • the terms such as “one embodiment,” “some embodiments,” “exemplary embodiments,” “an example,” “specific example” or “some examples” are intended to indicate that specific features, structures, materials or characteristics related to the embodiment(s) or example(s) are included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms do not necessarily refer to the same embodiment(s) or example(s).
  • the specific features, structures, materials, or characteristics may be included in any one or more embodiments or examples in any suitable manner.
  • first and second are only used for descriptive purposes, and are not to be construed as indicating or implying the relative importance or implicitly indicating the number of indicated technical features.
  • a feature defined with “first” or “second” may explicitly or implicitly include one or more of the features.
  • “a/the plurality of” means two or more unless otherwise specified.
  • connection and derivatives thereof may be used.
  • the term “connected” may be used in the description of some embodiments to indicate that two or more components are in direct physical or electric contact with each other.
  • the embodiments disclosed herein are not necessarily limited to the contents herein.
  • a and/or B includes following three combinations: only A, only B, and a combination of A and B.
  • the term “if” is, optionally, construed to mean “when” or “in a case where” or “in response to determining” or “in response to detecting”, depending on the context.
  • the phrase “if it is determined” or “if [a stated condition or event] is detected” is, optionally, construed to mean “in a case where it is determined” or “in response to determining” or “in a case where [the stated condition or event] is determined ” or “in response to detecting [the stated condition or event]”, depending on the context.
  • Exemplary embodiments are described herein with reference to sectional views and/or plan views as idealized exemplary drawings.
  • thicknesses of layers and regions are exaggerated for clarity. Therefore, variations in shapes with respect to the drawings due to, for example, manufacturing techniques and/or tolerances are conceivable. Therefore, the exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but include the deviations in shapes due to, for example, manufacturing.
  • an etched region that is shown to have a rectangular shape generally has a curved feature. Therefore, the regions shown in the accompanying drawings are schematic in nature, and their shapes are not intended to show actual shapes of the regions in a device, and are not intended to limit the scope of the exemplary embodiments.
  • An active layer of an oxide thin film transistor may be, for example, manufactured by using a photoetching process.
  • a layer of an oxide semiconductor material film may be deposited first, and then a photoresist layer may be formed on a surface of the oxide semiconductor material film.
  • the photoresist layer is exposed and developed to obtain a patterned photoresist layer, and the patterned photoresist layer may be used to pattern the oxide semiconductor material film, so as to obtain the active layer.
  • the oxide semiconductor material film is easy to generate and accumulate static electricity in an exposure machine, and thus an electrostatic breakdown (i.e., electrostatic discharge (ESD)) may occur, which reduces a yield of an array substrate including the oxide thin film transistor.
  • ESD electrostatic discharge
  • a plurality of gates 1 ′ may be formed first, and then a gate insulating layer 2 ′ covering the plurality of gates 1 ′ and an oxide semiconductor material film 3 ′ covering the gate insulating layer 2 ′ are sequentially formed on a side of the plurality of gates 1 ′. Then, the oxide semiconductor material film 3 ′ is patterned by using the photoetching process.
  • an oxide semiconductor material is usually a substance with an amorphous structure, and is poor in conductivity, in a process of exposing the photoresist layer in the exposure machine, the static electricity is easily generated in the oxide semiconductor material film 3 ′.
  • the oxide semiconductor material film 3 ′ may also form parasitic capacitance structures with other conductive structures.
  • the oxide semiconductor material film 3 ′ may form parasitic capacitance structures with the gates 1 ′, and induce different gates 1 ′ to form parasitic capacitance structures. In a case where a large amount of static electricity generated in the oxide semiconductor material film 3 ′ accumulates, the electrostatic breakdown is easy to occur.
  • some embodiments of the present disclosure provide a method of manufacturing an array substrate. As shown in FIG. 2 , the method of manufacturing the array substrate includes S 100 to S 400 .
  • a base 1 is provided.
  • a category of the base 1 is various, which may be selectively set according to actual needs.
  • the base 1 may be an inorganic material base, or may be an organic material base.
  • the material of the base 1 may be soda-lime glass, quartz glass, sapphire glass, etc., or may be stainless steel, aluminum, nickel, etc.
  • the material of the base 1 may be polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyether sulfone (PES), polyimide (PI), polyamide, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or a combination of at least two of the foregoing.
  • the base 1 may be a rigid base. In a case of using the organic material for the base 1 , the base 1 may be a flexible base.
  • a plurality of conductive lines 2 are formed on the base 1 .
  • a material of the conductive lines 2 may include a conductive material or a combination of a plurality of conductive materials.
  • the material of the conductive lines 2 may include a metal material, a conductive metal oxide material, a conductive metal nitride material, a conductive polymer material, a conductive composite material, or a combination of at least two of the foregoing.
  • the metal material may be, for example, platinum, gold, silver, aluminum, chromium, nickel, copper, molybdenum, titanium, magnesium, calcium, barium, sodium, palladium, iron, manganese, or a combination of at least two of the foregoing.
  • the conductive metal oxide material may be, for example, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or doped metal oxide.
  • ITO indium tin oxide
  • FTO fluorine-doped tin oxide
  • doped metal oxide doped metal oxide.
  • the conductive metal nitride material may be, for example, titanium nitride.
  • the conductive polymer material may be, for example, polyaniline, polypyrrole, polythiophene, polyacetylene, poly(3,4-ethylenedioxythiophene)/poly(sodium-p-styrenesulfonate) (PEDOT/PSS) or a combination of at least two of the foregoing, or the above material doped with a dopant.
  • the dopant may be an acid such as hydrochloric acid, sulfuric acid, or sulfonic acid, or a Lewis acid such as PF 6 , AsF 5 , or FeCl 3 , or a halogen ion such as iodide ion, or a metal ion such as sodium ion or potassium ion.
  • the conductive composite material may be, for example, a conductive composite material dispersed with carbon black, graphite powders, or metal particles.
  • the conductive line 2 may be of a single-layer structure composed of a layer of conductive material, or may be of a multi-layer structure formed by sequentially stacking a plurality of layers of conductive materials.
  • the conductive line 2 may be of a single-layer structure formed by a layer of metal material.
  • the conductive line 2 may be of a three-layer structure formed by a first metal layer, a second metal layer, and the first metal layer that are sequentially stacked.
  • the first metal layer may be a single-layer structure formed by at least one metal material
  • the second metal layer may be a single-layer structure formed by at least one metal material
  • the metal material(s) included in the first metal layer are different from the metal material(s) included in the second metal layer.
  • an oxide semiconductor film 3 is formed on a side of the plurality of conductive lines 2 away from the base 1 .
  • the oxide semiconductor film 3 covers the plurality of conductive lines 2 , and is in direct contact with at least one conductive line 2 . That is, the oxide semiconductor film 3 may be in direct contact with one conductive line 2 , or may be in direct contact with a plurality of conductive lines 2 .
  • the at least one conductive line 2 is configured to discharge static electricity generated in the oxide semiconductor film 3 .
  • a magnetron sputtering process may be used to manufacture the oxide semiconductor film 3 .
  • the oxide semiconductor film 3 may be made of an amorphous oxide semiconductor material.
  • the oxide semiconductor material may be one of zinc oxide (ZnO), indium oxide (InO), stannic oxide (SnO 2 ), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum zinc oxide (AZO), yttrium zinc oxide (YZO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or indium aluminum zinc oxide (IAZO).
  • the oxide semiconductor material may be in an amorphous state. That is, the oxide semiconductor material may be the amorphous oxide semiconductor material.
  • the oxide semiconductor film 3 may be an amorphous indium gallium zinc oxide film.
  • the oxide semiconductor film 3 is patterned to remove a portion of the oxide semiconductor film 3 that is in direct contact with the at least one conductive line 2 , and form an oxide semiconductor layer 3 a including active layers 51 of a plurality of oxide thin film transistors 5 .
  • the oxide semiconductor layer 3 a and the at least one conductive line 2 are insulated from each other.
  • a photoetching process may be used to pattern the oxide semiconductor film 3 .
  • patterning the oxide semiconductor film 3 by using the photoetching process includes S 410 to S 450 .
  • a photoresist layer PR is formed on a surface of the oxide semiconductor film 3 away from the base 1 .
  • a coating process may be used to coat a photoresist on the surface of the oxide semiconductor film 3 away from the base 1 , so as to form the photoresist layer PR.
  • the photoresist may be a positive photoresist.
  • the photoresist may be a negative photoresist.
  • the method of manufacturing the array substrate will be schematically described below in an example where the photoresist is the positive photoresist.
  • the photoresist layer PR may be exposed in an exposure machine.
  • the static electricity is generated in the oxide semiconductor film 3 .
  • the static electricity generated in the oxide semiconductor film 3 may be discharged into the at least one conductive line 2 , and the static electricity is discharged through the at least one conductive line 2 , which reduces or even avoids the electrostatic accumulation in the oxide semiconductor film 3 , thereby avoiding the electrostatic breakdown caused by a large amount of static electricity accumulated in the oxide semiconductor film 3 .
  • the exposed photoresist layer PR is developed to remove an exposed portion of the photoresist layer PR, so as to obtain a patterned photoresist layer PR′.
  • the patterned photoresist layer PR′ exposes a portion of the surface of the oxide semiconductor film 3 away from the base 1 , and covers the remaining portion of the oxide semiconductor film 3 .
  • the oxide semiconductor film 3 is patterned by using the patterned photoresist layer PR′ as a mask. A portion of the oxide semiconductor film 3 that is not covered by the patterned photoresist layer PR′ is removed by etching, and a portion (i.e., the oxide semiconductor layer 3 a ) of the oxide semiconductor film 3 that is covered by the patterned photoresist layer PR′ is remained.
  • an orthogonal projection of the oxide semiconductor layer 3 a on the base 1 is at most partially overlapped with an orthogonal projection of the at least one conductive line 2 on the base 1 , and the oxide semiconductor layer 3 a and the at least one conductive line 2 are insulated from each other.
  • the plurality of conductive lines 2 are formed on the side of the base 1 , and after the oxide semiconductor film 3 is formed, the oxide semiconductor film 3 is in direct contact with the at least one conductive line 2 .
  • the static electricity generated in the oxide semiconductor film 3 may be discharged into the at least one conductive line 2 with good conductivity, which is beneficial to reducing the electrostatic accumulation in the oxide semiconductor layer 3 a including a plurality of active layers 51 , avoiding the electrostatic breakdown, and improving a yield of the manufactured array substrate.
  • a category of the thin film transistor 5 formed in the array substrate is various, which may be selectively set according to actual needs.
  • the oxide thin film transistor 5 formed in the array substrate may be a bottom-gate oxide thin film transistor. In some other embodiments, the oxide thin film transistor 5 formed in the array substrate may be a top-gate oxide thin film transistor.
  • the method of manufacturing the array substrate will be schematically described below in an example where the oxide thin film transistor 5 formed in the array substrate is the bottom-gate oxide thin film transistor. As shown in FIGS. 4 a to 4 c and 5 a to 5 c , the method of manufacturing the array substrate may further include S 210 to S 230 .
  • a gate conductive layer Gate is formed.
  • the gate conductive layer Gate and the plurality of conductive lines 2 are located on the same side of the base 1 .
  • the gate conductive layer Gate may include a plurality of gate lines GL and gates 52 of the plurality of oxide thin film transistors 5 .
  • Each gate 52 may be arranged opposite to the active layer 51 formed by subsequent manufacturing.
  • a material and a layer structure of the gate conductive layer Gate may be the same as or different from those of the plurality of conductive lines 2 .
  • the gate conductive layer Gate and the plurality of conductive lines 2 may be disposed on the same surface, and be of the same structure and the same material. That is, the gate conductive layer Gate and the plurality of conductive lines 2 may be manufactured in a same patterning process.
  • the gate conductive layer Gate and the plurality of conductive lines 2 may be formed by a following method.
  • a gate conductive material film is formed on a side of the base 1 , and then the gate conductive material film is patterned to form the plurality of conductive lines 2 and the gate conductive layer Gate synchronously.
  • the gate conductive material film may be patterned through a photoetching process.
  • a gate insulating film GI′ is formed on a side of both the plurality of conductive lines 2 and the gate conductive layer Gate away from the base 1 .
  • the gate insulating film GI′ covers the gate conductive layer Gate and the plurality of conductive lines 2 .
  • the gate insulating film GI′ may be made of silicon oxide, silicon oxynitride, silicon nitride, or other insulating materials.
  • the gate insulating film GI′ may be manufactured by using a plasma enhanced chemical vapor deposition (PECVD) process.
  • PECVD plasma enhanced chemical vapor deposition
  • the gate insulating film GI′ is patterned to form a gate insulating layer GI with at least one via hole K.
  • the at least one via hole K exposes at least one portion of a surface of the at least one conductive line 2 .
  • An orthogonal projection of the at least one via hole K on the base 1 is at least partially overlapped with the orthogonal projection of the at least one conductive line 2 on the base 1 .
  • the oxide semiconductor film 3 is in direct contact with the at least one conductive line 2 through the at least one via hole K.
  • the gate insulating film GI′ may be patterned through a photoetching process to obtain the gate insulating layer GI.
  • the gate insulating layer GI covers the gate conductive layer Gate.
  • the orthogonal projection of the at least one via hole K on the base 1 is at least partially overlapped with the orthogonal projection of the at least one conductive line 2 on the base 1 . That is, the at least one via hole K exposes at least one portion of the at least one conductive line 2 .
  • the via hole(s) K may be one or more.
  • a relationship between the at least one via hole K and the at least one conductive line 2 is various, which may be selectively set according to actual needs.
  • the at least one via hole K may be in one-to-one correspondence with the at least one conductive line 2 . That is, one via hole K may expose a portion of one conductive line 2 .
  • one conductive line 2 may correspond to at least two of the multiple via holes K. That is, in the at least two via holes K, each via hole K may expose a portion of the corresponding conductive line 2 .
  • one via hole K may correspond to at least two of the multiple conductive lines 2 . That is, the via hole K exposes portions of the at least two conductive lines 2 synchronously.
  • the formed oxide semiconductor film 3 may be in direct contact with the at least one conductive line 2 through the at least one via hole K.
  • the static electricity generated in the oxide semiconductor film 3 may be discharged into the at least one conductive line 2 through a portion of the oxide semiconductor film 3 located in the at least one via hole K, and be discharged through the at least one conductive line 2 .
  • the oxide semiconductor layer 3 a may expose the at least one via hole K, and thus expose the at least one portion of the at least one conductive line 2 .
  • the orthogonal projection of the formed oxide semiconductor layer 3 a on the base 1 may not be overlapped with the orthogonal projection of the at least one via hole K on the base 1 , so as to completely remove the oxide semiconductor material in the at least one via hole K.
  • a portion of a boundary of the orthogonal projection of the at least one conductive line 2 on the base 1 coincides with a portion of a boundary of the orthogonal projection of the at least one via hole K on the base 1 .
  • the at least one via hole K completely exposes the portion of the at least one conductive line 2 , so that the at least one conductive line 2 and the oxide semiconductor film 3 have a large contact area therebetween, so as to improve a diffusion efficiency of electrostatic charges in the oxide semiconductor film 3 .
  • the method of manufacturing the array substrate may further include: manufacturing sources 53 and drains 54 of the oxide thin film transistors 5 .
  • the method of manufacturing the array substrate may further include S 500 .
  • a source-drain conductive layer SD is formed on a side of the oxide semiconductor layer 3 a away from the base 1 .
  • the source-drain conductive layer SD may include a plurality of sources 53 and a plurality of drains 54 .
  • the plurality of sources 53 are electrically connected to the plurality of active layers 51 in one-to-one correspondence
  • the plurality of drains 54 are electrically connected to the plurality of active layers 51 in one-to-one correspondence.
  • the oxide thin film transistor 5 may include the active layer 51 , the source 53 and the drain 54 .
  • the source-drain conductive layer SD may further include auxiliary lead(s) 6 , and the auxiliary lead(s) 6 are electrically connected to the at least one conductive line 2 .
  • the auxiliary lead(s) 6 may be in direct contact with the at least one conductive line 2 in one-to-one correspondence, so as to form electrical connection(s).
  • the auxiliary lead 6 may be used to reduce a resistance of the conductive line 2 electrically connected to the auxiliary lead 6 , which improves stability of an electrical signal transmitted in the conductive line 2 .
  • the auxiliary lead 6 may be used to reduce the resistance of the conductive line 2 electrically connected to the auxiliary lead 6 , a line width (i.e., a dimension of the conductive line 2 in the direction perpendicular to the routing direction of the conductive line 2 ) of the conductive line 2 may be reduced, thereby reducing a space ratio of the conductive line 2 in the array substrate.
  • the source-drain conductive layer SD may be formed by a following method.
  • a source-drain conductive material film SD′ may be formed on the side of the oxide semiconductor layer 3 a away from the base 1 , and the source-drain conductive material film SD′ covers the portion of the at least one conductive line 2 that is exposed through the at least one via hole K, a portion of the gate insulating layer GI that is not covered by the active layers 51 , and the active layers 51 .
  • the source-drain conductive material film SD′ may be made of titanium (Ti), platinum (Pt), ruthenium (Ru), gold (Au), silver (Ag), molybdenum (Mo), aluminum (Al), tungsten (W), copper (Cu), neodymium (Nd), chromium (Cr), tantalum (Ta), or an alloy thereof, or a combination of at least two of the foregoing materials.
  • the source-drain conductive material film SD′ may be of a single-layer structure formed by a layer of conductive material, or may be of a multi-layer structure formed by a plurality of layers of conductive materials that are sequentially stacked.
  • a sputtering process may be used to form the source-drain conductive material film SD′.
  • the source-drain conductive material film SD′ may be patterned to form the source-drain conductive layer SD including the auxiliary lead(s) 6 , the sources 53 and the drains 54 .
  • the source-drain conductive material film SD′ may be patterned through a photoetching process.
  • the source-drain conductive layer SD may further include source-drain layer leads, for example, include voltage lead(s) and data lines DL.
  • orthogonal projections of the auxiliary lead 6 and the conductive line 2 electrically connected to the auxiliary lead 6 on the base 1 may coincide with each other or may partially overlap.
  • the formed array substrate 100 may have a display area A and a bezel area B located beside the display area A. Accordingly, the base 1 also has a bezel area and a display area. An orthogonal projection of the bezel area B of the array substrate 100 on a plane parallel to the base 1 coincides with an orthogonal projection of the bezel area of the base 1 on the plane parallel to the base 1 , and an orthogonal projection of the display area A of the array substrate 100 on the plane parallel to the base 1 coincides with an orthogonal projection of the display area of the base 1 on the plane parallel to the base 1 .
  • the bezel area B may be located at one, two or three sides of the display area A, or the bezel area B may be arranged around the display area A.
  • the at least one conductive line 2 that is in direct contact with the oxide semiconductor film 3 may be formed in the bezel area B of the array substrate 100 .
  • the at least one conductive line 2 may be first common electrode line(s) used to provide a common voltage signal to the display area A, or may be electrostatic protection line(s) used to perform an electrostatic protection on the array substrate 100 .
  • the at least one conductive line 2 may have a large dimension in the direction perpendicular to the routing direction of the at least one conductive line 2 , so as to ensure that the at least one conductive line 2 has a small impedance, thereby ensuring the stability of the electrical signal transmitted by the at least one conductive line 2 .
  • the resistance of the at least one conductive line 2 may be reduced, thereby reducing the line width of the at least one conductive line 2 , which is beneficial to reducing a size of the bezel area B, so as to realize a narrow bezel design for the array substrate 100 .
  • the at least one conductive line 2 that is in direct contact with the oxide semiconductor film 3 may be formed in the display area A of the array substrate 100 .
  • the at least one conductive line 2 may be second common electrode line(s) that transmit a common voltage signal to an electrode layer (e.g., a common electrode layer or a cathode layer) in the array substrate.
  • the method of manufacturing the array substrate may further include: forming a passivation layer (PVX) 7 on a side of the oxide thin film transistors 5 away from the base 1 .
  • PVX passivation layer
  • FIGS. 4 g and 5 l a plurality of pixel electrodes 8 are formed on a side of the passivation layer 7 away from the base 1 , and the plurality of pixel electrodes 8 are electrically connected to the sources 53 or the drains 54 of the plurality of oxide thin film transistors 5 in one-to-one correspondence.
  • the method of manufacturing the array substrate may further include: before forming the pixel electrodes 8 , forming a planarization layer covering the passivation layer 7 , so as to provide a planar surface for the pixel electrodes 8 .
  • the pixel electrodes 8 may be formed on a surface of the planarization layer away from the base 1 .
  • the manufactured array substrate 100 may be applied to a liquid crystal display (LCD) apparatus.
  • the method of manufacturing the array substrate 100 may further include: forming a common electrode at a side of the pixel electrodes 8 away from the base 1 .
  • the method of manufacturing the array substrate may further include: sequentially forming a light-emitting layer and the cathode layer on the side of the pixel electrode 8 away from the base 1 .
  • the cathode layer may be electrically connected to the at least one conductive line 2 , or electrically connected to the auxiliary lead(s) 6 , or electrically connected to both the at least one conductive line 2 and the auxiliary lead(s) 6 .
  • the manufactured array substrate may be applied to an organic light-emitting diode (OLED) display apparatus.
  • OLED organic light-emitting diode
  • the method of manufacturing the array substrate is exemplarily as follows.
  • the base 1 is provided.
  • the base 1 is a glass base.
  • the base 1 has the display area and the bezel area around the display area.
  • the gate conductive material film is formed on the side of the base 1 , and the gate conductive material film covers the display area and the bezel area of the base 1 .
  • the gate conductive material film may be formed through a deposition process.
  • the gate conductive material film may be formed through a magnetron sputtering deposition process.
  • the gate conductive material film is patterned to form the gate conductive layer Gate located in the display area A and the plurality of conductive lines 2 located in the bezel area B.
  • the gate conductive layer Gate includes the plurality of gate lines GL and the plurality of gates 52 used to form the oxide thin film transistors 5 .
  • the plurality of conductive lines 2 include at least one common electrode line used to provide the common voltage signal to the display area and/or at least one electrostatic protection line used to perform the electrostatic protection on the array substrate 100 .
  • the gate insulating film GI′ covering the gate conductive layer Gate and the plurality of conductive lines 2 is formed on the side of both the gate conductive layer Gate and the plurality of conductive lines 2 away from the base 1 .
  • the gate insulating film GI′ may be formed through a deposition process.
  • the gate insulating film GI′ may be formed through a chemical vapor deposition (CVD) process.
  • the gate insulating film GI′ is patterned with a mask to form the gate insulating layer GI with the at least one via hole K.
  • the at least one via hole K exposes the portion of the at least one conductive line 2 .
  • the portion of the boundary of the orthogonal projection of the at least one conductive line 2 on the base 1 coincides with the portion of the boundary of the orthogonal projection of the at least one via hole K on the base 1 .
  • the mask may have a pattern used to form the at least one via hole K in the bezel area B.
  • the oxide semiconductor film 3 is formed on a side of the gate insulating layer GI away from the base 1 .
  • the oxide semiconductor film 3 is located both in the display area A and the bezel area B.
  • the oxide semiconductor film 3 is in direct contact with the at least one conductive line 2 through the at least one via hole K in the gate insulating layer GI.
  • the oxide semiconductor film 3 may be formed through a deposition process.
  • the oxide semiconductor film 3 may be formed through a magnetron sputtering process.
  • the oxide semiconductor film 3 is patterned to form the oxide semiconductor layer 3 a .
  • the oxide semiconductor layer 3 a includes the plurality of active layers 51 used to form the oxide thin film transistors 5 , and the oxide semiconductor layer 3 a does not cover the at least one conductive line 2 .
  • the orthogonal projection of the oxide semiconductor layer 3 a on the base 1 is completely non-overlapped with the orthogonal projection of the at least one conductive line 2 on the base 1 .
  • a substrate including the oxide semiconductor film 3 may be transported into the exposure machine for exposure. Since the oxide semiconductor material is usually the substance with the amorphous structure, and is poor in conductivity, the static electricity is easily generated in the oxide semiconductor film 3 in the exposure machine. Since the oxide semiconductor film 3 is in direct contact with the at least one conductive line 2 , the static electricity generated in the oxide semiconductor film 3 may be discharged into the at least one conductive line 2 , and be discharged through the at least one conductive line 2 , which reduces or even avoids the electrostatic accumulation, and effectively avoids the electrostatic breakdown.
  • the portion of the oxide semiconductor film 3 located above and inside the at least one via hole K is removed to expose the portion of the surface of the at least one conductive line 2 .
  • the source-drain conductive material film SD′ is formed on the side of the oxide semiconductor layer 3 a away from the base 1 , and the source-drain conductive material film SD′ is located both in the display area A and the bezel area B. That is, the source-drain conductive material film SD′ covers the exposed at least one conductive line 2 , the portion of the gate insulating layer GI that is not covered by the active layers 51 , and the active layers 51 .
  • the source-drain conductive material film SD′ may be formed through a deposition process.
  • the source-drain conductive material film SD′ may be formed through a magnetron sputtering process.
  • the source-drain conductive material film SD′ is patterned to form the source-drain conductive layer SD.
  • the source-drain conductive layer SD includes the auxiliary lead(s) 6 located in the bezel area B and in direct contact with the at least one conductive line 2 through the via hole(s) K, and both a plurality of data lines DL and the sources 53 and the drains 54 of the oxide thin film transistors 5 located in the display area A.
  • the auxiliary lead 6 may be connected in parallel with the conductive line 2 to reduce the resistance of the conductive line 2 , which not only improves the stability of the electrical signal transmitted in the at least one conductive line 2 , but also reduces the dimension of the at least one conductive line 2 in the direction perpendicular to the routing direction of the at least one conductive line 2 , thereby facilitating reduction in the size of the bezel area B, and facilitating realization of the narrow frame design for the array substrate 100 .
  • the passivation layer (PVX) 7 and the planarization layer 9 are sequentially formed on a side of the source-drain conductive layer SD away from the base 1 .
  • the plurality of pixel electrodes 8 are formed on a side of the planarization layer away from the base 1 .
  • the plurality of pixel electrodes 8 are electrically connected to the drains 54 of the plurality of oxide thin film transistors 5 , respectively.
  • a material of the pixel electrodes 8 may be, for example, ITO.
  • the method of manufacturing the array substrate may exemplarily further include: sequentially forming the light-emitting layer and the cathode layer on the side of the pixel electrodes 8 away from the base 1 , the cathode layer extending to the bezel area B and being in direct contact with the auxiliary lead(s) 6 to form electrical connections; forming a protective layer on a side of the cathode layer away from the base 1 .
  • the conductive line 2 electrically connected to the auxiliary lead may be the common electrode line.
  • the array substrate 100 may include a base 1 , a plurality of conductive lines 2 and a plurality of oxide thin film transistors 5 .
  • a material of the base 1 may refer to the schematic descriptions in some of the above embodiments, which will not be repeated here.
  • the plurality of oxide thin film transistors 5 and the plurality of conductive lines 2 are disposed on the same side of the base 1 .
  • each oxide thin film transistor 5 includes an active layer 51 , a gate 52 , a source 53 and a drain 54 .
  • the active layer 51 of any oxide thin film transistor 5 is obtained by patterning an oxide semiconductor film 3 that is in direct contact with at least one conductive line 2 (e.g., reference may be made to the method of manufacturing the array substrate provided in some of the above embodiments).
  • the active layer 51 of any oxide thin film transistor 5 and the at least one conductive line 2 are insulated from each other.
  • the material of the active layers 51 may be an oxide semiconductor material.
  • the oxide semiconductor material may be an amorphous oxide semiconductor material.
  • the amorphous oxide semiconductor material may be one of zinc oxide, indium oxide, stannic oxide, indium zinc oxide, zinc tin oxide, aluminum zinc oxide, yttrium zinc oxide, indium tin zinc oxide, indium gallium zinc oxide or indium aluminum zinc oxide.
  • the array substrate 100 provided by some embodiments of the present disclosure may be manufactured through the method of manufacturing the array substrate in some of the above embodiments. Since the active layers 51 of the plurality of oxide thin film transistors 5 are obtained by patterning the oxide semiconductor film 3 that is in direct contact with the at least one conductive line 2 , and the at least one conductive line 2 has a good conductivity, static electricity generated in the oxide semiconductor film 3 may be discharged into the at least one conductive line 2 , and be discharged through the at least one conductive line 2 , which avoids an electrostatic accumulation in an oxide semiconductor layer 3 a including a plurality of active layers 51 , thereby avoiding an electrostatic breakdown, and effectively improving a yield of the array substrate 100 .
  • a structure of the array substrate 100 in some embodiments of the present disclosure will be schematically described below with reference to the accompanying drawings.
  • the oxide thin film transistor 5 is a bottom-gate oxide thin film transistor, which is taken as an example.
  • the plurality of conductive lines 2 and the gates 52 of respective oxide thin film transistors 5 are located at a side of the active layers 51 proximate to the base 1 .
  • the plurality of conductive lines 2 and the gates 52 are made of the same material and arranged in the same layer.
  • the “same layer” mentioned herein means that a film for forming a specific pattern is formed by using the same film-forming process, and then is patterned by a same patterning process by using the same mask to form a layer structure.
  • the same patterning process may include several exposure, development or etching processes, the specific patterns formed in the layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.
  • the plurality of conductive lines 2 and the gates 52 may be manufactured in a same patterning process, which is beneficial to simplify a manufacturing process of the array substrate 100 .
  • the array substrate 100 further includes a gate insulating layer GI disposed between the gates 52 and the active layers 51 .
  • the gates 52 belong to a gate conductive layer Gate
  • the active layers 51 belong to the oxide semiconductor layer 3 a . That is, the gate insulating layer GI is located between the gate conductive layer Gate and the oxide semiconductor layer 3 a .
  • the gate conductive layer Gate may further include gate lines GL.
  • the gate insulating layer GI has at least one via hole K that exposes at least one portion of the at least one conductive line 2 . That is, an orthogonal projection of the at least one via hole K on the base 1 is at least partially overlapped with an orthogonal projection of the at least one conductive line 2 on the base 1 .
  • a portion of a boundary of the orthogonal projection of the at least one conductive line 2 on the base 1 coincides with a portion of a boundary of the orthogonal projection of the at least one via hole K on the base 1 .
  • the oxide semiconductor film 3 may be electrically connected to the at least one conductive line 2 through the at least one via hole K. In this way, in a case where the static electricity is generated in the oxide semiconductor film 3 , the static electricity may be discharged into the at least one conductive line 2 through a portion of the oxide semiconductor film 3 located in the at least one via hole K, and then the static electricity is discharged through the at least one conductive line 2 .
  • the array substrate further includes auxiliary lead(s) 6 that are in direct contact with the at least one conductive line 2 .
  • the auxiliary lead(s) 6 can be set in various ways, which may be selectively set according to actual needs.
  • the auxiliary lead(s) 6 may be disposed on a side of the gate insulating layer GI away from the base 1 , and the auxiliary lead(s) 6 are in direct contact with the at least one conductive line 2 through the at least one via hole K.
  • the auxiliary lead(s) 6 may be used to reduce a resistance of the at least one conductive line 2 , thereby reducing a dimension of the at least one conductive line 2 in the direction perpendicular to the routing direction of the at least one conductive line 2 , and reducing a space ratio of the at least one conductive line 2 in the array substrate 100 .
  • the auxiliary lead(s) 6 and the sources 53 and the drains 54 of the oxide thin film transistors 5 may be made of the same material and arranged in the same layer.
  • the auxiliary lead(s) 6 , the sources 53 , and the drains 54 may be manufactured in a same patterning process, which is beneficial to simplify the manufacturing process of the array substrate 100 .
  • a film including the auxiliary lead(s) 6 , the sources 53 and the drains 54 may be referred to as a source-drain conductive layer SD.
  • the source-drain conductive layer SD may further include data lines DL and power lines.
  • orthogonal projection(s) of the auxiliary lead(s) 6 on the base 1 are at least partially overlapped with the orthogonal projection of the at least one conductive line 2 on the base 1 .
  • the auxiliary lead(s) 6 are in one-to-one correspondence with the at least one conductive line 2 .
  • the orthogonal projection of the auxiliary lead 6 on the base 1 is at least partially overlapped with the orthogonal projection of a corresponding conductive line 2 on the base 1 , which may include: a partial misalignment being present between the auxiliary lead 6 and the conductive line 2 , so that a portion of the orthogonal projection of the auxiliary lead 6 on the base 1 is overlapped with a portion of the orthogonal projection of the corresponding conductive line 2 on the base 1 ; or, the orthogonal projection of the auxiliary lead 6 on the base 1 being located within the orthogonal projection of the corresponding conductive line 2 on the base 1 .
  • a routing direction of the auxiliary lead 6 is the same or substantially the same as the routing direction of the at least one conductive line 2 . That is, an angle between a routing direction of a portion of the auxiliary lead 6 and a routing direction of a portion of the conductive line 2 that is overlapped with the portion of the auxiliary lead 6 is 0° or approximately 0°. This is beneficial to ensure the reduction in the resistance of the at least one conductive line 2 .
  • the array substrate 100 may further include a passivation layer 7 disposed on a side of both the sources 53 and the drains 54 away from the base 1 (i.e., covering the oxide thin film transistors 5 ).
  • a portion of the passivation layer 7 may be located in the at least one via hole K in the gate insulating layer GI. In this way, it is possible to prevent a conductive layer (e.g., pixel electrodes 8 ) subsequently formed from forming electrical connection(s) with the at least one conductive line 2 , so as to avoid signal crosstalk.
  • a conductive layer e.g., pixel electrodes 8
  • the array substrate 100 may further include the pixel electrodes 8 disposed at a side of the passivation layer 7 away from the base 1 .
  • the pixel electrodes 8 may be, for example, electrically connected to the drains 54 of the oxide thin film transistors 5 .
  • the array substrate 100 may further include a planarization layer disposed between the passivation layer 7 and the pixel electrodes 8 .
  • the array substrate 100 has a display area A and a bezel area B located beside the display area A.
  • a display area A For “beside the display area A”, reference may be made to the schematic descriptions in some of the above examples.
  • the oxide thin film transistors 5 in the array substrate 100 may be located in the display area A.
  • the at least one conductive line 2 electrically connected to the oxide semiconductor film 3 may be located in the display area A, or may be located in the bezel area B.
  • the at least one conductive line 2 may be second common electrode line(s) that transmit a common voltage signal to an electrode layer (e.g., a common electrode layer or a cathode layer) in the array substrate.
  • the at least one conductive line 2 may be first common electrode line(s) used to provide a common voltage signal to the display area A, or may be electrostatic protection line(s) used to perform an electrostatic protection on the array substrate 100 .
  • the array substrate 100 may include the base 1 , the plurality of conductive lines 2 , the gate conductive layer Gate, the gate insulating layer GI, the oxide semiconductor layer 3 a , the source-drain conductive layer SD, the passivation layer 7 and the plurality of pixel electrodes 8 .
  • the base 1 may be a glass base.
  • the base 1 may have a display area and a bezel area around the display area.
  • the plurality of conductive lines 2 may be located in the bezel area of the base 1 .
  • the gate conductive layer Gate may be located in the display area of the base 1 .
  • the gate conductive layer Gate and the plurality of conductive lines 2 may be disposed on the same side and located on the same surface of the base 1 .
  • the gate conductive layer Gate and the plurality of conductive lines 2 are made of the same material and arranged in the same layer.
  • the gate conductive layer Gate may include the plurality of gate lines GL and the plurality of gates 52 used to form the oxide thin film transistors 5 .
  • the gate insulating layer GI may be disposed on a side of both the plurality of conductive lines 2 and the gate conductive layer Gate away from the base 1 .
  • the gate insulating layer GI has the at least one via hole K, and the at least one via hole K exposes a portion of the at least one of the plurality of conductive lines 2 . That is, the orthogonal projection of the at least one via hole K on the base 1 is partially overlapped with the orthogonal projection of the at least one conductive line 2 on the base 1 .
  • the oxide semiconductor layer 3 a may be disposed at the side of the gate conductive layer Gate away from the base 1 .
  • the oxide semiconductor layer 3 a includes the plurality of active layers 51 used to form the oxide thin film transistors 5 , and an orthogonal projection of the oxide semiconductor layer 3 a on the base 1 is completely non-overlapped with the orthogonal projection of the at least one conductive line 2 on the base 1 .
  • the oxide semiconductor layer 3 a is obtained by patterning the oxide semiconductor film 3 that is in direct contact with the at least one conductive line 2 .
  • the source-drain conductive layer SD may be disposed on a side of the oxide semiconductor layer 3 a away from the base 1 .
  • the source-drain conductive layer SD may include the auxiliary lead(s) 6 electrically connected to the at least one conductive line 2 through the at least one via hole K in the gate insulating layer GI, a plurality of source-drain layer leads (e.g., data lines DL), and the sources 53 and the drains 54 of the oxide thin film transistors 5 .
  • the auxiliary lead(s) 6 may be disposed in the bezel area B, and the source-drain layer leads, the sources 53 , and the drains 54 are disposed in the display area A.
  • the passivation layer 7 may be formed on a side of the source-drain conductive layer SD away from the base 1 .
  • the passivation layer 7 may expose portions of the drains 54 in the source-drain conductive layer SD.
  • the plurality of pixel electrodes 8 may be disposed at the side of the passivation layer 7 away from the base 1 .
  • the plurality of pixel electrodes 8 may be electrically connected to the plurality of drains 54 in one-to-one correspondence.
  • the array substrate 100 may be manufactured through the method of manufacturing the array substrate in some of the above embodiments, and the structure, principle and effects of the array substrate 100 have been described in detail in the method of manufacturing the array substrate in some of the above embodiments, which will not be repeated here.
  • Some embodiments of the present disclosure further provide a display apparatus 1000 .
  • the display apparatus 1000 includes the array substrate 100 as described in some of the above embodiments.
  • Beneficial effects that may be achieved by the display apparatus 1000 in some embodiments of the present disclosure are the same as the beneficial effects that may be achieved by the array substrate 100 in some of the above embodiments, which will not be repeated here.
  • a category of the display apparatus 1000 is various, which may be selectively set according to actual needs.
  • the display apparatus 1000 may be a liquid crystal display (LCD) apparatus.
  • the display apparatus 1000 may further include an opposite substrate 200 arranged opposite to the array substrate 100 , and a liquid crystal layer 300 disposed between the array substrate 100 and the opposite substrate 200 .
  • the opposite substrate 200 may be a transparent substrate, or may be a color film substrate (as shown in FIG. 8 ).
  • the array substrate 100 may further include a color film layer and/or black matrixes disposed on a side of the pixel electrodes 8 proximate to the opposite substrate 200 .
  • the display apparatus 1000 may be an organic light-emitting diode (OLED) display apparatus.
  • the display apparatus 1000 may further include a plurality of light-emitting devices 400 disposed on a side of the plurality of oxide thin film transistors 5 in the array substrate 100 away from the base 1 .
  • the pixel electrode 8 in the array substrate 100 may be referred to as an anode layer of the light-emitting device 400 .
  • the light-emitting device 400 may further include a light-emitting layer and a cathode layer that are sequentially stacked on a side of the anode layer away from the base 1 .
  • the display apparatus 100 may be any apparatus that displays images whether in motion (e.g., a video) or stationary (e.g., a static image), and whether literal or graphical. It is anticipated that the described embodiments may be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal digital assistants (PDA), handheld or portable computers, global positioning system (GPS) receivers/navigators, cameras, moving picture experts group 4 (MP4) video players, video cameras, game consoles, watches, clocks, calculators, television monitors, computer monitors, car displays (e.g., odometer displays), navigators, cockpit controllers and/or displays, camera view displays (e.g., rear-view camera displays in vehicles), electronic photographs, electronic billboards or direction boards, projectors, building structures, packaging and aesthetic structures (e.g., a display for an image of a piece of jewelry).
  • PDA personal digital assistants
  • GPS global positioning system
  • MP4 moving picture experts group 4
  • video cameras

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
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