US20190043930A1 - Oled display panel, method for manufacturing the same and oled display device - Google Patents

Oled display panel, method for manufacturing the same and oled display device Download PDF

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US20190043930A1
US20190043930A1 US15/962,535 US201815962535A US2019043930A1 US 20190043930 A1 US20190043930 A1 US 20190043930A1 US 201815962535 A US201815962535 A US 201815962535A US 2019043930 A1 US2019043930 A1 US 2019043930A1
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anode
functional layer
layer
light
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Tao Wang
Song Zhang
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H01L27/3206—
    • H01L27/3244—
    • H01L51/0097—
    • H01L51/5221—
    • H01L51/5265—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L2227/323—
    • H01L2251/5338—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present disclosure relates to the field of display technologies, and in particular to an OLED display panel, a method for manufacturing the same and an OLED display device.
  • a flexible OLED display panel Compared to a flexible liquid crystal display panel, a flexible OLED display panel has not only a self-luminous characteristic, but also may achieve a curved display with a smaller bending radius since the OLED display panel is prepared on a flexible substrate. Therefore, the flexible OLED display panel has been more widely used.
  • a flexible OLED display panel usually has a curved edge. It is well known that there are different levels of microcavity effects in the light-emitting elements of an OLED display panel. With the microcavity effect, the densities of photon of different energy levels are redistributed, so that only light of a specific wavelength that conforms to a resonant cavity mode may be emitted out at a specific angle, resulting in a narrowing in half width of the light wave and changes in the light intensity and wavelength of the emitted light with the change of observation angles.
  • the curved region of the OLED display panel has a larger observation angle for the user than that of the flat region, and the intensity and wavelength of the emitted light will change more significantly, resulting in a change in the spectral range. In this way, the user may view a color shift in an image observed in the curved region, thereby affecting the user's viewing experience.
  • the present disclosure provides an OLED display panel, a method for manufacturing the same and an OLED display device so as to overcome at least part of the drawbacks in the prior art.
  • the embodiments of the present disclosure provide an OLED display panel comprising a flat region and a curved region, wherein the OLED display panel comprises a light-emitting element in the flat region and a light-emitting element in the curved region, each light-emitting element comprises a cathode and an anode, and a distance between the anode and the cathode of the light-emitting element in the curved region is greater than a distance between the anode and the cathode of the light-emitting element in the flat region.
  • At least one functional layer is formed between the anode and the cathode of the light-emitting element in the curved region; at least one functional layer is formed between the anode and the cathode of the light-emitting element in the flat region; and a total thickness of the at least one functional layer of the light-emitting element in the curved region is greater than a total thickness of the at least one functional layer of the light-emitting element in the flat region.
  • the functional layer of the light-emitting element in the flat region comprises a basic functional layer; the functional layer of the light-emitting element in the curved region comprises a basic functional layer; and the functional layer of the light-emitting element in the curved region further comprises a first thickening layer having a same function as a corresponding basic functional layer.
  • the first thickening layer has a single-layered film structure or a multi-layered film structure.
  • the basic functional layers having a same function in the curved region and the flat region are formed by one patterning process.
  • the same function is a light emitting function, an electron injection function, an electron transport function, a hole injection function, or a hole transport function.
  • At least one functional layer is formed between the anode and the cathode of the light-emitting element in the curved region; at least one functional layer is formed between the anode and the cathode of the light-emitting element in the flat region; and a second thickening layer is further formed between the anode and the cathode of the light-emitting element in the curved region.
  • the second thickening layer is located between the anode and the functional layer of the light-emitting element in the curved region, or the second thickening layer is located between the cathode and the functional layer of the light-emitting element in the curved region.
  • the second thickening layer is a grating.
  • the grating has a height of 50 nm to 60 nm, and the grating has a period of 1 ⁇ m to 10 ⁇ m.
  • the grating is filled with a hole injection material or a hole transport material, or the grating is filled with an electron injection material or an electron transport material.
  • the distance between the anode and the cathode of the light-emitting element in the curved region is 1.1 to 3 times the distance between the anode and the cathode of the light-emitting element in the flat region.
  • the embodiments of the present disclosure also provides a method for manufacturing an OLED display panel, wherein the OLED display panel comprises a flat region and a curved region, and the method comprises:
  • a substrate comprising a first region corresponding to the curved region of the OLED display panel and a second region corresponding to the flat region of the OLED display panel;
  • a distance between an anode and a cathode of the light-emitting element in the first region being greater than a distance between an anode and a cathode of the light-emitting element in the second region.
  • the step of forming a light-emitting element in each of the first region and the second region on the substrate comprises:
  • the cathode on a surface of the functional layer in the first region facing away from the anode, and the cathode on a surface of the functional layer in the second region facing away from the anode.
  • the functional layer formed in the first region comprises a basic functional layer
  • the functional layer formed in the second region comprises a basic functional layer
  • the functional layer formed in the first region further comprises a first thickening layer having the same function as a corresponding basic functional layer.
  • the first thickening layer in the first region is formed by one or more patterning process; and the basic functional layers having a same function in the first region and the second region are formed by one patterning process.
  • the step of forming a light-emitting element in each of the first region and the second region on the substrate comprises:
  • a cathode on a surface of the second thickening layer and the at least one functional layer in the first region facing away from the anode, and a cathode on a surface of the functional layer in the second region facing away from the anode.
  • the step of forming a second thickening layer and at least one functional layer on a surface of the anode in the first region facing away from the substrate, and at least one functional layer on a surface of the anode in the second region facing away from the substrate comprises:
  • the second thickening layer is a grating.
  • the embodiments of the present disclosure further provides an OLED display device comprising the OLED display panel according to the embodiments of the present disclosure.
  • FIG. 1 is a schematic view of an OLED display panel having a curved edge
  • FIG. 2 is a schematic structural diagram of an OLED display panel according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of another OLED display panel according to an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of another OLED display panel according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of another OLED display panel according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of another OLED display panel according to an embodiment of the present disclosure.
  • FIG. 7 is a schematic structural cross-sectional view of a grating in an OLED display panel according to an embodiment of the present disclosure
  • FIG. 8 is a flowchart of a method for manufacturing an OLED display panel according to an embodiment of the present disclosure
  • FIG. 9 is a flowchart of an exemplary method for manufacturing an OLED display panel according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of steps of an exemplary method for manufacturing an OLED display panel according to an embodiment of the present disclosure
  • FIG. 11 is a flowchart of another exemplary method for manufacturing an OLED display panel according to an embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of steps of another exemplary method for manufacturing an OLED display panel according to an embodiment of the present disclosure.
  • a light-emitting element is provided in each of a flat region and a curved region, and a distance between an anode and a cathode of the light-emitting element in the curved region is greater than a distance between an anode and a cathode of the light-emitting element in the flat region. Since the microcavity in the light-emitting element may be regarded as a resonant cavity, the distance between the anode and the cathode of the light-emitting element may be regarded as the cavity length of the microcavity.
  • the cavity length of the microcavity of the light-emitting element in the curved region is accordingly increased.
  • the cavity length of the microcavity when the cavity length of the microcavity is increased, light in a larger wavelength range may satisfy the resonance condition so as to be emitted out.
  • the light in a larger spectral range may be observed, thereby at least partially overcoming the problem of spectrum movement under different observation angles due to the microcavity effect in the prior art and avoiding color shifts in the viewed image to a certain extent. Therefore, by using the OLED display panel provided by the present disclosure, the display effect of the curved region may be improved to a certain extent, thereby further improving the display performance of the OLED display panel.
  • the present disclosure provides an OLED display panel.
  • the OLED display panel comprises a curved region and a flat region, whereinthe curved region of the OLED display panel is generally a peripheral region of the OLED display panel, and the flat region of the OLED display panel is usually the middle region of the OLED display panel (the middle region is the region surrounded by the peripheral region).
  • the OLED display panel comprises a plurality of light-emitting elements 1 distributed in the flat region and the curved region; wherein a distance h 1 between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region is greater than a distance h 2 between the anode 2 and the cathode 3 of the light-emitting element 1 in the flat region.
  • the above light-emitting element 1 may be an organic light emitting diode.
  • a microcavity may be formed between the anode 2 and the cathode 3 of the organic light emitting diode, and the distance between the anode 2 and the cathode 3 may be regarded as a cavity length of the microcavity. Since the microcavity may be regarded as a resonant cavity, based on the resonance principle of microcavity, when the distance between the anode 2 and the cathode 3 is increased, the cavity length of the microcavity is increased such that light of a larger wavelength may be emitted from the microcavity.
  • the distance h 1 between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region is greater than the distance h 2 between the anode 2 and the cathode 3 of the light-emitting element 1 in the flat region. That is, in comparison to the flat region, the distance h 1 between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region is increased, that is, the increase of the cavity length of the microcavity of the light-emitting element 1 in the curved region is realized.
  • the structures of the corresponding OLED display panel are described in detail in cases where the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region is increased in different manners.
  • the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region may be increased by increasing the total thickness of the functional layer included in the light-emitting element 1 in the curved region, such that the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region is larger than the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the flat region.
  • the functional layer included in the light-emitting element 1 in each of the curved region and the flat region includes only one layer of film.
  • the functional layer in the curved region may further include a first thickening layer having the same function as the corresponding basic functional layer.
  • the organic light emitting layer of the light-emitting element 1 in the curved region includes both a basic functional layer and a first thickening layer, whereas the organic light emitting layer of the light-emitting element 1 in the flat region includes only a basic functional layer.
  • the thickness of the organic light-emitting layer in the curved region may be increased, and in turn the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region may be increased.
  • the basic functional layers having the same function may be separately formed in the curved region and the flat region by two patterning processes during the manufacturing process, or may also be formed simultaneously in the curved region and the flat region by one patterning process.
  • the basic functional layers having the same function in the curved region and the flat region are formed by one patterning process, not only the process steps may be reduced, but also the number of used masks may be reduced, thereby lowering the production cost.
  • the function of the first thickening layer is set to be the same as the corresponding basic functional layer such that the formed first thickening layer does not affect the performance of the functional layer in which the first thickening layer is located, and does not affect the normal light emission of the light-emitting element 1 .
  • the first thickening layer may be a single-layered film structure or a multi-layered film structure as long as the first thickening layer can play a role of thickening.
  • the detailed structure of the OLED display panel is as follows: the anode 2 is formed on a surface of the substrate 5 ; a first thickening layer 41 of the organic light emitting layer is formed by one patterning process on a surface of the anode 2 in the curved region facing away from the substrate 5 ; and a basic functional layer 42 of the organic light emitting layer is then formed on a surface of the first thickening layer 41 of the organic light emitting layer facing away from anode 2 and on a surface of anode 2 in the flat region facing away from substrate 5 by another patterning process.
  • a cathode 3 is further formed on a surface of the basic functional layer 42 of the organic light emitting layer facing away from the anode 2 .
  • the multi-layered film included in the first thickening layer may be formed through a plurality of patterning processes, so that the coverage areas of the orthographic projections of the multi-layered film on the substrate are increased in a gradient manner.
  • a first mask is used to form the first layer of film included in the first thickening layer through vapor deposition process, and then the second mask to the nth mask with gradually expanded deposition areas are used to form the second to nth layers of film included in the first thickening layer, respectively, wherein the nth layer of film has an orthographic projection on the substrate corresponding to the curved region.
  • the first thickening layer 41 of the organic light-emitting layer includes a first layer of film 411 , a second layer of film 412 and a third layer of film 413 stacked on a surface of the anode 2 facing away from the substrate 5 in the curved region.
  • the orthographic projection of the first layer of film 411 on the substrate 5 corresponds only to the portion in the curved region the curvature of which is the largest (corresponding to the middle portion of the curved region in FIG.
  • the basic functional layer 42 of the organic light emitting layer is formed on a surface of the third layer of film 413 facing away from the anode 2 and on a surface of the anode 2 in the flat region facing away from the substrate 5 .
  • the cathode 3 is formed on the surface of the basic functional layer 42 of the organic light emitting layer facing away from the anode 2 .
  • the microcavity effect has a greater influence on the intensity and wavelength of the emitted light. Therefore, when viewing the image under the observation angle corresponding to the portion with a greater curvature, the color shift in the observed image will be relatively significant.
  • the thickness of the first thickening layer formed in the above manner is sequentially reduced from the middle portion with the larger curvature to the portion with the smaller curvature at both sides. That is, in the entire curved region, the first thickening layer in the portion with a greater curvature has a larger thickness, i.e. the cavity length of the microcavity in this portion is longer. In this way, the light in a larger wavelength range may satisfy the resonance condition and may be emitted from the portion with a larger curvature, thereby further avoiding the color shift.
  • the coverage areas of the orthographic projections of the layers of film on the substrate 5 may be increased in a gradient manner as shown in FIG. 4 or may be decreased in a gradient manner.
  • only one of the plurality layers of film included in the first thickening layer needs to have the orthographic projection on the substrate 5 corresponding to the entire curved region, so that the thickness of the functional layer in the entire curved region may be increased in relation to the flat region.
  • the first thickening layer of the functional layer may be formed between the corresponding basic functional layer and the anode 2 , or may be formed between the corresponding basic functional layer and the cathode 3 .
  • the first thickening layer of the functional layer may be formed between the corresponding basic functional layer and the anode 2 , or may be formed between the corresponding basic functional layer and the cathode 3 .
  • the switching unit 6 On the surface of the substrate 5 , there are sequentially formed a plurality of switching units 6 in one-to-one correspondence with a plurality of pixels, a planarization layer 7 covering the switching units 6 and the substrate 5 , a plurality of anodes 2 each connected to each of the plurality of switching units 6 , and a pixel defining layer 8 for defining pixel regions.
  • the switching unit 6 may specifically be a thin film transistor structure.
  • a first thickening layer 91 of the hole transport layer is formed on the surface of the anode 2 in the curved region facing away from the substrate 5 .
  • a basic functional layer 92 of the hole transport layer is formed by one patterning process.
  • the orthographic projection of the formed basic functional layer 92 of the hole transport layer on the substrate 5 corresponds to the curved region and the flat region.
  • a first thickening layer 41 of the organic light emitting layer is formed on a surface of the basic functional layer 92 of the hole transport layer facing away from the substrate 5 .
  • a basic functional layer 42 of the organic light-emitting layer is formed on a surface of the first thickening layer 41 of the organic light-emitting layer facing away from the substrate 5 .
  • the orthographic projection of the formed basic functional layer 42 of the organic light emitting layer on the substrate 5 corresponds to the curved region and the flat region.
  • a first thickening layer 101 of the electron transport layer is formed on a surface of the basic functional layer 42 of the organic light emitting layer facing away from the substrate 5 .
  • a basic functional layer 102 of the electron transport layer is formed on a surface of the first thickening layer 101 of the electron transport layer facing away from the substrate 5 .
  • the orthographic projection of the formed basic functional layer 102 of the electron transport layer on the substrate 5 covers the curved region and the flat region.
  • a cathode 3 is formed, and an orthographic projection of the formed cathode 3 on the substrate 5 corresponds to the curved region and the flat region.
  • the hole transport layer 9 and the electron transport layer 10 may be formed by open metal masks. Specifically, the first thickening layer 91 of the hole transport layer and the first thickening layer 101 of the electron transport layer are formed through a first open metal mask, and the basic functional layer 92 of the hole transport layer and the basic functional layer 102 of the electron transport layer are formed through a second open metal mask.
  • the extent of opening of the first open metal mask is different from that of the second open metal mask.
  • the organic light emitting layer in the light-emitting element 1 is a white-light organic light emitting layer
  • the first thickening layer of the white-light organic light emitting layer is formed by a first open metal mask
  • the basic functional layer of the white-light organic light emitting layer is formed by a second open metal mask.
  • the organic light-emitting layer in the light emitting element 1 is a RGB organic light emitting layer
  • the RGB organic light emitting layer needs to be set separately with respect to each pixel. Therefore, when the RGB organic light emitting layer is formed, a fine metal mask (abbreviated as FMM) is required.
  • FMM fine metal mask
  • the first thickening layer of the RGB organic light emitting layer is formed by a first fine metal mask
  • the basic functional layer of the RGB organic light emitting layer is formed by a second fine metal mask.
  • the extent of opening of the first fine metal mask is different from that of the second fine metal mask.
  • the structure of the OLED display panel shown in FIG. 5 is only for illustrative purposes.
  • other layers such as a hole injection layer and an electron injection layer, may also be provided between the anode 2 and the cathode 3 of the light-emitting element 1 , and the present disclosure does not specifically limit the type of the functional layer provided between the anode 2 and the cathode 3 of the light-emitting element 1 .
  • a first thickening layer be included in the curved region of at least one functional layer. There is no specific limitation to the number of functional layers having the first thickening layer in the present disclosure.
  • a second thickening layer 11 is formed between the anode 2 and the cathode 3 in the curved region so as to increase the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region in relation to the flat region.
  • the second thickening layer 11 may be formed between the anode 2 and the functional layer in the curved region, and may also be formed between the functional layer and the cathode 3 in the curved region.
  • a planarization layer 7 covering the switching units 6 and the substrate 5 , a plurality of anodes 2 each connected to each of the plurality of switching units 6 , and a pixel defining layer 8 for defining pixel regions.
  • the second thickening layer 11 is formed on a surface of the anode 2 in the curved region facing away from the substrate 5 .
  • the hole transport layer 9 is formed by one patterning process.
  • the organic light-emitting layer 4 is formed by one patterning process.
  • the hole transport layer 10 is formed by one patterning process.
  • the cathode 3 is formed on a surface of the hole transport layer 10 facing away from the substrate 5 .
  • the orthographic projections of the formed hole transport layer 9 , the organic light emitting layer 4 , the electron transport layer 10 , and the cathode 3 on the substrate 5 each correspond to the curved region and the flat region.
  • the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region may be increased in relation to the flat region, so that the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region is greater than the distance between anode 2 and cathode 3 of the light-emitting element 1 in the flat region.
  • the second thickening layer 11 may be a grating made of a photoresist material.
  • the height of the grating affects the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region, i.e. the cavity length of the microcavity.
  • the grating height may be set to 30 nm to 105 nm.
  • the height of the grating is preferably 50 nm to 60 nm.
  • the height of the grating is 50 nm to 60 nm, not only can the cavity length of the microcavity be significantly increased so that light of a larger wavelength may be emitted from the microcavity, but also can the tip discharge phenomenon be avoided so as to avoid adverse effects on the light-emitting element 1 .
  • the period of the grating can be preferably 1 ⁇ m to 10 ⁇ m.
  • the period of the grating is 1 ⁇ m ⁇ 10 ⁇ m, it may ensure that the grating has enough undulation, so that the cavity length may have a significant change, thereby significantly broadening the spectral range of the light emitted from the microcavity.
  • FIG. 7 A schematic cross-sectional structure of an exemplary grating is shown in FIG. 7 .
  • the grating since the grating includes a large number of slits, the surface shape thereof is uneven, and thus the structure formed on a surface of the grating facing away from the substrate may be uneven. Therefore, when the grating is formed between the anode 2 and the functional layer in the curved region, a hole injection material or a hole transport material may be filled in the recesses of the grating so as to ensure that the grating has a smooth surface, such that the functional layer formed on the surface of the grating facing away from the anode 2 has a flat surface.
  • an electron injection material or an electron transport material may be filled in the recesses of the grating, so that the cathode 3 formed on the surface of the grating facing away from the functional layer has a smooth surface.
  • an electron injection material, an electron transport material, a hole injection material, or a hole transport material by filling the recesses of the grating with an electron injection material, an electron transport material, a hole injection material, or a hole transport material, and if necessary the filled material penetrates the grating in the thickness direction of the grating, it may ensures the normal operation of the light-emitting element while the material of the grating itself may not have the function of these filled materials.
  • the second thickening layer 11 may be any layer which does not affect the light emitting performance of the light-emitting element 1 , and there is no specific limitation to this in the present disclosure.
  • the structure of the OLED display panel shown in FIG. 2 to FIG. 6 is merely for illustrative purposes.
  • the curved region in the figures does not show a curved state in order to allow a clearer and more apparent comparison of the distance between the anode and the cathode in the curved region and the distance between the anode and the cathode in the flat region. It may be understood that, in practical applications, the curved region of the OLED display panel should be in a curved state, as shown in FIG. 1 , for example.
  • the present disclosure provides a method for manufacturing an OLED display panel.
  • the method for manufacturing an OLED display panel may be used to manufacture an OLED display panel according to the present disclosure.
  • the method for manufacturing the OLED display panel specifically includes:
  • Step S 1 providing a substrate comprising a first region corresponding to the curved region of the OLED display panel and a second region corresponding to the flat region of the OLED display panel;
  • Step S 2 forming a plurality of light-emitting elements in each of the first region and the second region on the substrate, a distance between an anode and a cathode of the light-emitting element in the first region being greater than a distance between the anode and the cathode of the light-emitting element in the second region.
  • the distance between the anode and the cathode of the light-emitting element in the curved region is greater than the distance between the anode and the cathode of the light-emitting element in the flat region, that is, the cavity length of the microcavity of the light-emitting element in the curved region of the OLED display panel is accordingly increased.
  • the resonance principle of microcavity when the cavity length of the microcavity is increased, light in a larger wavelength range can satisfy the resonance condition so as to be emitted out, thereby increasing the spectral range of the emitted light.
  • step S 2 may specifically include:
  • Step S 21 forming a plurality of anodes in each of the first region and the second region on the substrate, the plurality of anodes being in one-to-one correspondence to the plurality of pixels;
  • Step S 22 forming at least one functional layer on a surface of the anode in the first region facing away from the substrate, and at least one functional layer on a surface of the anode in the second region facing away from the substrate, wherein the functional layer formed in the second region comprises a basic functional layer, and the functional layer formed in the first region comprises a basic functional layer, and at least one of the functional layers formed in the first region further comprises a first thickening layer having the same function as a corresponding basic functional layer; and
  • Step S 23 forming the cathode on a surface of the functional layer in the first region facing away from the anode, and on a surface of the functional layer in the second region facing away from the anode.
  • the first thickening layer when it is a single-layered film structure, it may be formed by using a single mask through one patterning process. When the first thickening layer is a multi-layered film structure, it can be formed by using a plurality of masks having different opening ratios through multiple patterning processes. In addition, for the basic functional layers having the same function, they may be separately formed in the first region and the second region through two patterning processes, or they may be formed simultaneously in the first region and the second region through a single patterning process. When the basic functional layers having the same function in the first region and the second region is formed through one patterning process, not only the process steps may be reduced, but also the number of used masks may be reduced, thereby lowering the production cost.
  • Step H 1 providing a substrate 5 , and forming a plurality of switching units 6 on a surface of the substrate 5 , wherein the formed plurality of switching units 6 are in one-to-one correspondence to the plurality of pixels.
  • Step H 2 forming a planarization layer 7 on a surface of the switching units 6 facing away from the substrate 5 , wherein the formed planarization layer 7 covers the switching units 6 and the substrate 5 .
  • Step H 3 forming a plurality of anodes 2 on a surface of the planarization layer 7 facing away from the switching units 6 , wherein the anodes 2 are in one-to-one electrical connection to the switching units 6 , i.e. anodes 2 are in one-to-one correspondence to the pixels.
  • Step H 4 forming a pixel defining layer 8 for defining pixel regions on the surface of the planarization layer 7 facing away from the switching units 6 .
  • Step H 5 forming a first thickening layer 91 of the hole transport layer on the surface of the anode 2 in the first region facing away from the substrate 5 by a first open metal mask through vapor deposition; forming a basic functional layer 92 of the hole transport layer on a surface of the first thickening layer 91 of the hole transport layer facing away from the anode 2 and on a surface of the anode 2 in the second region facing away from the substrate 5 by a second open metal mask through vapor deposition.
  • the orthographic projection of the formed basic functional layer 92 of the hole transport layer on the substrate 5 corresponds to the first region and the second region.
  • Step H 6 forming a first thickening layer 41 of the organic light emitting layer by vapor deposition, on a surface of the basic functional layer 92 of the hole transport layer facing away from the substrate 5 , in a portion corresponding to the first region; forming a basic functional layer 42 of the organic light-emitting layer by vapor deposition, on a surface of the first thickening layer 41 of the organic light-emitting layer facing away from the substrate 5 and on a surface of the basic functional layer 92 of the hole transport layer facing away from the substrate 5 in the second region.
  • the orthographic projection of the formed basic functional layer 42 of the organic light emitting layer on the substrate 5 corresponds to the first region and the second region.
  • Step H 7 forming a first thickening layer 101 of the electron transport layer by a first open metal mask through vapor deposition, on a surface of the basic functional layer 42 of the organic light emitting layer facing away from the substrate 5 , in a portion corresponding to the first region; forming a basic functional layer 102 of the electron transport layer by a second open metal mask through vapor deposition, on a surface of the first thickening layer 101 of the electron transport layer facing away from the substrate 5 and a surface of the basic functional layer 42 of the organic light emitting layer facing away from the substrate 5 in the second region.
  • the orthographic projection of the formed basic functional layer 102 of the electron transport layer on the substrate 5 covers the first region and the second region.
  • Step H 8 forming the cathode 3 , on a surface of the basic functional layer 102 of the electron transport layer facing away from the first thickening layer 101 in the first region and on a surface of the basic functional layer 102 of the electron transport layer facing away from the substrate 5 in the second region.
  • an orthographic projection of the formed cathode 3 on the substrate 5 corresponds to the first region and the second region.
  • the organic light-emitting layer 4 is an RGB organic light-emitting layer
  • the first thickening layer of the RGB organic light emitting layer is formed by a first fine metal mask through vapor deposition
  • the basic functional layer of the RGB organic light emitting layer is formed by a second fine metal mask through vapor deposition.
  • the organic light emitting layer 4 is a white-light organic light emitting layer
  • the first thickening layer of the white-light organic light emitting layer is formed by a first open metal mask through vapor deposition
  • the basic functional layer of the white-light organic light emitting layer is formed by a second open metal mask through vapor deposition.
  • step S 2 may specifically include:
  • Step S 21 ′ forming a plurality of anodes in the first region and the second region on the substrate, the plurality of anodes being in one-to-one correspondence to the plurality of pixels.
  • Step S 22 ′ forming a second thickening layer and at least one functional layer on a surface of the anode in the first region facing away from the substrate, and forming at least one functional layer on a surface of the anode in the second region facing away from the substrate.
  • Step S 23 ′ forming a cathode, the formed cathode covering the second thickening layer and at least one functional layer in the first region, and at least one functional layer in the second region.
  • a second thickening layer 11 is formed between the anode 2 and the cathode 3 in the curved region so as to increase the distance between the anode 2 and the cathode 3 of the light-emitting element 1 in the curved region in relation to the flat region.
  • step S 22 ′ may specifically include:
  • Step S 221 ′ forming a second thickening layer on a surface of the anode in the first region facing away from the substrate.
  • Step S 222 ′ forming at least one functional layer, on a surface of the second thickening layer facing away from the anode and on a surface of the anode in the second region facing away from the substrate.
  • step S 22 ′ may specifically include:
  • Step S 221 ′′ forming at least one functional layer on a surface of the anode in each of the first region and the second region facing away from the substrate.
  • Step S 222 ′′ forming a second thickening layer on a surface of the functional layer in the first region facing away from the anode.
  • the hole transport layer 9 , the organic light emitting layer 4 , and the electron transport layer 10 are respectively provided between the anode and the cathode of the light-emitting element in the first region and the second region, with reference to FIG. 12 , taking the second thickening layer 11 located between the anode 2 and the functional layer in the first region as an example, a method of manufacturing an OLED display panel provided by the present disclosure is described in detail as follows.
  • Step H 1 ′ providing a substrate 5 , forming a plurality of switching units 6 on a surface of the substrate 5 , the formed plurality of switching units 6 being in one-to-one correspondence to a plurality of pixels.
  • Step H 2 ′ forming a planarization layer 7 on a surface of the switching unit 6 facing away from the substrate 5 , wherein the formed planarization layer 7 covers the switching units 6 and the substrate 5 .
  • Step H 3 ′ forming a plurality of anodes 2 on a surface of the planarization layer 7 facing away from the switching units 6 , wherein anodes 2 are in one-to-one electrical connection to the switching units 6 , i.e. anodes 2 are in one-to-one correspondence to the pixels.
  • Step H 4 ′ forming a pixel defining layer 8 for defining pixel regions on the surface of the planarization layer 7 facing away from the switching units 6 .
  • Step H 5 ′ forming a second thickening layer 11 on a surface of the anode 2 in the first region facing away from the substrate 5 .
  • Step H 6 ′ forming the hole transport layer 9 by the second open metal mask through vapor deposition, on a surface of the second thickening layer 11 facing away from the substrate 5 , and on a surface of the anode 2 in the second region facing away from the substrate 5 , wherein the orthographic projection of the formed hole transport layer 9 on the substrate 5 covers the first region and the second region.
  • Step H 7 ′ forming the organic light-emitting layer 4 by a second fine metal mask or a second open metal mask through vapor deposition, on a surface of the hole transport layer 9 facing away from the substrate 5 , wherein the orthographic projection of the formed organic light-emitting layer 4 on the substrate 5 covers the first region and the second region.
  • Step H 8 ′ forming the electron transport layer 10 by the second open metal mask through vapor deposition, on a surface of the organic light-emitting layer 4 facing away from the substrate 5 , wherein the orthographic projection of the formed electron transport layer 10 on the substrate 5 covers the first region and second region.
  • Step H 9 ′ forming a cathode 3 on the surface of the electron transport layer 10 facing away from the substrate 5 , wherein the orthographic projection of the formed cathode 3 on the substrate 5 covers the first region and the second region.
  • the second thickening layer may be a grating with a height of 50 nm to 60 nm formed from a photoresist material, and may also be any other layer that does not affect the light emitting performance of the light-emitting element, and is not specifically limited in the present disclosure.
  • the structures of the OLED display panel shown in FIGS. 10 and 12 are merely for illustrative purposes.
  • the first region (corresponding to the curved region of the OLED display panel) in the figures does not show a curved state in order to allow a clearer and more apparent comparison of the distance between the anode and the cathode in the first region and the distance between the anode and the cathode in the second region (corresponding to the flat region of the OLED display panel). It may be understood that, in practical applications, the curved region of the OLED display panel should be in a curved state.
  • the present disclosure further provides an OLED display device including the OLED display panel as described in the present disclosure.
  • the OLED display device provided by the present disclosure includes the OLED display panel as described in the present disclosure, when the user views the image at the observation angle corresponding to the curved region by using the OLED display device in the present disclosure, the light in a larger spectral range may be seen, and the color shift of the image may be avoided to a certain extent, thereby improving the display performance of the OLED display device.

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