US20180133834A1 - Splitting of a solid using conversion of material - Google Patents

Splitting of a solid using conversion of material Download PDF

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Publication number
US20180133834A1
US20180133834A1 US15/544,014 US201515544014A US2018133834A1 US 20180133834 A1 US20180133834 A1 US 20180133834A1 US 201515544014 A US201515544014 A US 201515544014A US 2018133834 A1 US2018133834 A1 US 2018133834A1
Authority
US
United States
Prior art keywords
solid
modifications
less
laser
generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/544,014
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English (en)
Inventor
Christian Beyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltectra GmbH
Original Assignee
Siltectra GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltectra GmbH filed Critical Siltectra GmbH
Publication of US20180133834A1 publication Critical patent/US20180133834A1/en
Priority to US16/591,693 priority Critical patent/US10661392B2/en
Assigned to SILTECTRA GMBH reassignment SILTECTRA GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BEYER, CHRISTIAN
Abandoned legal-status Critical Current

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    • B23K26/0057—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • B23K2203/56—

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Solid Wastes (AREA)
  • Centrifugal Separators (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
US15/544,014 2015-01-15 2015-11-27 Splitting of a solid using conversion of material Abandoned US20180133834A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/591,693 US10661392B2 (en) 2015-01-15 2019-10-03 Splitting of a solid using conversion of material

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015000449.2A DE102015000449A1 (de) 2015-01-15 2015-01-15 Festkörperteilung mittels Stoffumwandlung
DE102015000449.2 2015-01-15
PCT/EP2015/077979 WO2016113030A2 (de) 2015-01-15 2015-11-27 Festkörperteilung mittels stoffumwandlung

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/077979 A-371-Of-International WO2016113030A2 (de) 2015-01-15 2015-11-27 Festkörperteilung mittels stoffumwandlung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/591,693 Continuation US10661392B2 (en) 2015-01-15 2019-10-03 Splitting of a solid using conversion of material

Publications (1)

Publication Number Publication Date
US20180133834A1 true US20180133834A1 (en) 2018-05-17

Family

ID=54782683

Family Applications (3)

Application Number Title Priority Date Filing Date
US15/544,014 Abandoned US20180133834A1 (en) 2015-01-15 2015-11-27 Splitting of a solid using conversion of material
US16/591,693 Active US10661392B2 (en) 2015-01-15 2019-10-03 Splitting of a solid using conversion of material
US16/863,505 Active US11014199B2 (en) 2015-01-15 2020-04-30 Method of modifying a solid using laser light

Family Applications After (2)

Application Number Title Priority Date Filing Date
US16/591,693 Active US10661392B2 (en) 2015-01-15 2019-10-03 Splitting of a solid using conversion of material
US16/863,505 Active US11014199B2 (en) 2015-01-15 2020-04-30 Method of modifying a solid using laser light

Country Status (5)

Country Link
US (3) US20180133834A1 (de)
EP (2) EP4234148A3 (de)
CN (2) CN107107262B (de)
DE (1) DE102015000449A1 (de)
WO (1) WO2016113030A2 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180043468A1 (en) * 2016-08-10 2018-02-15 Disco Corporation SiC WAFER PRODUCING METHOD
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) * 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US10940611B2 (en) 2018-07-26 2021-03-09 Halo Industries, Inc. Incident radiation induced subsurface damage for controlled crack propagation in material cleavage
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015000449A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
KR20200006641A (ko) * 2014-11-27 2020-01-20 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
DE102019208024A1 (de) * 2019-06-03 2020-12-03 Robert Bosch Gmbh Verfahren zur Herstellung einer Rückseite eines Leistungstransistors und Leistungstransistor

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US5968382A (en) * 1995-07-14 1999-10-19 Hitachi, Ltd. Laser cleavage cutting method and system
US20050048738A1 (en) * 2003-08-28 2005-03-03 Shaheen Mohamad A. Arrangements incorporating laser-induced cleaving
US20100289189A1 (en) * 2007-11-02 2010-11-18 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
US20160254232A1 (en) * 2013-10-08 2016-09-01 Silectra GmbH Combined wafer production method with laser treatment and temperature-induced stresses

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DE19849658A1 (de) * 1998-10-29 2000-05-04 Deutsch Zentr Luft & Raumfahrt Verfahren und Einrichtung zum Ablösen eines Ausschnittes einer Materialschicht
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
CN101740331B (zh) 2008-11-07 2012-01-25 东莞市中镓半导体科技有限公司 利用固体激光器无损剥离GaN与蓝宝石衬底的方法
ES2418142T3 (es) * 2008-12-23 2013-08-12 Siltectra Gmbh Procedimiento para producir capas independientes delgadas de materiales en estado sólido con superficies estructuradas
US8432021B2 (en) * 2009-05-26 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
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DE102010030358B4 (de) * 2010-06-22 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zum Abtrennen einer Substratscheibe
RU2459691C2 (ru) * 2010-11-29 2012-08-27 Юрий Георгиевич Шретер Способ отделения поверхностного слоя полупроводникового кристалла (варианты)
JP5480169B2 (ja) 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP6004339B2 (ja) 2011-02-10 2016-10-05 信越ポリマー株式会社 内部応力層形成単結晶部材および単結晶基板製造方法
JP5950269B2 (ja) 2011-02-10 2016-07-13 国立大学法人埼玉大学 基板加工方法及び基板
CN103380482B (zh) * 2011-02-10 2016-05-25 信越聚合物株式会社 单结晶基板制造方法及内部改质层形成单结晶部件
JP5722127B2 (ja) 2011-06-07 2015-05-20 株式会社小松製作所 作業車両の周辺監視装置
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JP5843393B2 (ja) 2012-02-01 2016-01-13 信越ポリマー株式会社 単結晶基板の製造方法、単結晶基板、および、内部改質層形成単結晶部材の製造方法
JP6044919B2 (ja) * 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
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AU2013222069A1 (en) * 2012-02-26 2014-10-16 Solexel, Inc. Systems and methods for laser splitting and device layer transfer
JP6039306B2 (ja) * 2012-08-24 2016-12-07 浜松ホトニクス株式会社 レーザ加工方法
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
WO2014113503A1 (en) * 2013-01-16 2014-07-24 QMAT, Inc. Techniques for forming optoelectronic devices
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DE102013007672A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
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JP6531885B2 (ja) 2013-10-07 2019-06-19 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
DE102015000449A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
KR20200006641A (ko) 2014-11-27 2020-01-20 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968382A (en) * 1995-07-14 1999-10-19 Hitachi, Ltd. Laser cleavage cutting method and system
US20050048738A1 (en) * 2003-08-28 2005-03-03 Shaheen Mohamad A. Arrangements incorporating laser-induced cleaving
US20100289189A1 (en) * 2007-11-02 2010-11-18 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
US20160254232A1 (en) * 2013-10-08 2016-09-01 Silectra GmbH Combined wafer production method with laser treatment and temperature-induced stresses

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180043468A1 (en) * 2016-08-10 2018-02-15 Disco Corporation SiC WAFER PRODUCING METHOD
US10112256B2 (en) * 2016-08-10 2018-10-30 Disco Corporation SiC wafer producing method
US10940611B2 (en) 2018-07-26 2021-03-09 Halo Industries, Inc. Incident radiation induced subsurface damage for controlled crack propagation in material cleavage
US10576585B1 (en) * 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US20200316724A1 (en) * 2018-12-29 2020-10-08 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) * 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Also Published As

Publication number Publication date
US20200262008A1 (en) 2020-08-20
EP3253529B1 (de) 2023-04-26
WO2016113030A3 (de) 2016-09-09
US11014199B2 (en) 2021-05-25
US10661392B2 (en) 2020-05-26
DE102015000449A1 (de) 2016-07-21
US20200061752A1 (en) 2020-02-27
EP4234148A3 (de) 2023-10-18
EP3253529A2 (de) 2017-12-13
WO2016113030A2 (de) 2016-07-21
EP4234148A2 (de) 2023-08-30
CN107107262B (zh) 2021-09-21
CN107107262A (zh) 2017-08-29
CN113770564A (zh) 2021-12-10
WO2016113030A4 (de) 2016-11-17

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