TW201641206A - 薄板的分離方法 - Google Patents
薄板的分離方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 101
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- 239000013078 crystal Substances 0.000 claims description 18
- 238000002407 reforming Methods 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 13
- 238000003825 pressing Methods 0.000 description 10
- 230000001902 propagating effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
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- 239000002346 layers by function Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
本發明之課題是提供一種有效率地將在SiC基板之上表面藉由晶膜生長所積層之薄板從SiC基板分離之薄板的分離方法。解決手段是一種薄板的分離方法,是將具有第一面及與該第一面為相反側的第二面、從該第一面到該第二面之c軸、及與該c軸正交之c面的SiC基板之在該第一面藉由晶膜生長所積層之薄板從SiC基板分離,並包含:分離起點形成步驟,將對於SiC基板具有穿透性之波長的雷射光束之聚光點從該第二面定位至SiC基板之該第一面附近,並且將該聚光點與SiC基板相對地移動來將該雷射光束照射在該第二面,並形成與該第一面平行之改質層及由該改質層沿c面伸長之裂隙而形成分離起點;及分離步驟,實施該分離起點形成步驟後,賦予外力以由該分離起點將該薄板從SiC基板分離。
Description
本發明是有關於一種薄板的分離方法,其是將SiC基板上透過晶膜生長所積層之薄板(薄膜)從SiC基板分離。
IC、LSI等之各種元件,在以矽等為素材之晶圓的表面積層機能層,並形成於藉由複數條分割預定線在此機能層所區劃出的區域中。並且,藉由切削裝置、雷射加工裝置等之加工裝置對晶圓之分割預定線施行加工,而將晶圓分割為一個個的元件晶片,且所分割之元件晶片被廣泛地利用於行動電話、個人電腦等之各種電子機器中。
形成有元件之晶圓,一般是將晶錠以線鋸切片而生成,並且研磨被切片之晶圓的表面、背面而加工成為鏡面(參照例如日本專利特開2000-94221號公報)。
又,功率元件、LED、LD等之光元件,是在以SiC、GaN等之六方晶體單晶為素材之晶圓表面積層機能層而形成的,並有將晶錠切片以形成晶圓之方法、與在SiC基板之上表面透過晶膜生長積層SiC薄板(薄膜)、GaN薄板(薄
膜),之後再從SiC基板將薄板分離而形成高純度之晶圓的方法。
專利文獻1:日本專利特開2000-94221號公報
然而,要從SiC基板將薄板分離時,需要將SiC基板以線鋸切斷,並對殘存於薄板之背面的SiC基板之一部分進行研磨而生成僅由薄板所構成之晶圓。因此,導致SiC基板之大部分變得被捨棄,而有無法進行SiC基板之再利用之不符經濟效益的問題。
本發明是有鑑於此類的問題點而作成之發明,其目的在於提供一種有效率地將在SiC基板之上表面透過晶膜生長所積層的薄板從SiC基板分離之薄板的分離方法。
依據本發明所提供的一種薄板的分離方法,是將具有第一面及與該第一面為相反側的第二面、從該第一面到該第二面之c軸、以及與該c軸正交之c面的SiC基板之在該第一面藉由晶膜生長所積層之薄板從SiC基板分離,該薄板的分離方法之特徵在於具備:分離起點形成步驟,將對於SiC基板具有穿透性之波長的雷射光束之聚光點從該第二面定位至SiC基板之該第一
面附近,且將該聚光點與SiC基板相對地移動來將該雷射光束照射在該第二面,並形成與該第一面平行之改質層及從該改質層沿c面伸長之裂隙而形成分離起點;及分離步驟,實施該分離起點形成步驟後,賦予外力以由該分離起點將該薄板從SiC基板分離,且該分離起點形成步驟包含:改質層形成步驟,該c軸相對於該第二面之垂直線傾斜偏角角度,並在與於該第二面及該c面之間形成偏角之第二方向正交的第一方向上移動雷射光束的聚光點以形成在第一方向上延伸之直線狀的改質層;及分度步驟,在該第二方向上將該聚光點相對地移動而分度預定量。
較理想的是,在該分離起點形成步驟中,該聚光點是定位於該薄板側,且當實施該分離步驟時,該薄板之一部分會殘存於SiC基板側。
又或,在該分離起點形成步驟中,將該聚光點定位於SiC基板側,且當實施該分離步驟時,SiC基板之一部分會殘存於該薄板側。
依據本發明之薄板的分離方法,因為使形成直線狀之改質層形成於c面上,並且使裂隙在改質層之兩側沿c面傳播,因此可以藉由裂隙連結改質層與相鄰之改質層而形成分離起點,並輕易地從分離起點分離薄板,且可以再利用已將薄板分離之SiC基板,而具有經濟效益。
2‧‧‧雷射加工裝置
4‧‧‧靜止基台
6‧‧‧第一滑塊
8、18‧‧‧滾珠螺桿
10、20‧‧‧脈衝馬達
11‧‧‧SiC基板
11a‧‧‧第一面(表面)
11b‧‧‧第二面(背面)
11c‧‧‧殘存部分
12‧‧‧加工進給機構
13‧‧‧第一定向平面
14‧‧‧滑軌
15‧‧‧第二定向平面
16‧‧‧第二滑塊
17‧‧‧第一面之垂直線
19‧‧‧c軸
19a‧‧‧交點
21‧‧‧c面
22‧‧‧分度進給機構
23‧‧‧改質層
24‧‧‧導軌
25‧‧‧裂隙
26‧‧‧支撐台
27‧‧‧薄板(薄膜)
28、52‧‧‧柱部
30‧‧‧雷射光束照射單元
32‧‧‧殼體
34‧‧‧雷射光束產生單元
36‧‧‧聚光器(雷射頭)
38‧‧‧攝像單元
40‧‧‧雷射振盪器
42‧‧‧重複頻率設定手段
44‧‧‧脈衝寬度調整手段
46‧‧‧功率調整手段
48‧‧‧鏡子
50‧‧‧聚光透鏡
53‧‧‧開口
54‧‧‧按壓機構
56‧‧‧頭部
58‧‧‧按壓構件
60‧‧‧工作夾台
60a‧‧‧保持面
62‧‧‧磨削單元
64‧‧‧主軸
66‧‧‧輪座
67‧‧‧螺絲
68‧‧‧磨削輪
70‧‧‧輪基台
72‧‧‧磨削磨石
α‧‧‧偏角
A、b、R‧‧‧箭頭方向
W1‧‧‧裂隙之寬度
W2‧‧‧應分度移動之預定量(分度量)
X、Y、Y1、Z‧‧‧方向
圖1是適用於實施本發明之薄板的分離方法之雷射加工裝置的立體圖。
圖2是雷射光束產生單元的方塊圖。
圖3(A)是SiC基板之立體圖、圖3(B)是其正面圖。
圖4(A)是Si基板之正面圖、圖4(B)是於上表面具有藉由晶膜生長所積層之薄板的SiC基板之示意正面圖。
圖5是說明分離起點形成步驟之立體圖。
圖6是SiC基板之平面圖。
圖7是說明改質層形成步驟之示意剖面圖。
圖8是說明改質層形成步驟之示意平面圖。
圖9(A)、(B)是說明薄板分離步驟之立體圖。
圖10是所分離之薄板的立體圖。
圖11是顯示以磨削裝置之工作夾台隔著基材保持薄板之情形的立體圖。
圖12是顯示磨削步驟的立體圖。
以下,參照圖式詳細說明本發明的實施形態。參照圖1,所示為適用於實施本發明之薄板的分離方法之雷射加工裝置2的立體圖。雷射加工裝置2包含有以可在X軸方向上移動之形式搭載於靜止基台4上的第一滑塊6。
第一滑塊6藉由以滾珠螺桿8及脈衝馬達10所構成之加工進給機構12而沿著一對導軌14在加工進給方向
(亦即X軸方向)上移動。
第二滑塊16可在Y軸方向上移動地搭載於第一滑塊6上。亦即,第二滑塊16藉由以滾珠螺桿18及脈衝馬達20所構成之分度進給機構22而沿著一對導軌24在分度進給方向(亦即Y軸方向)上移動。
第二滑塊16上搭載有支撐台26。支撐台26藉由加工進給機構12及分度進給機構22而可在X軸方向及Y軸方向上移動,並且藉由收容於第二滑塊16中的馬達而旋轉。
靜止基台4上豎立設置有柱部28,並且雷射光束照射機構(雷射光束照射手段)30安裝於此柱部28。雷射光束照射機構30是由收容於罩殼32中之圖2所示的雷射光束產生單元34、及安裝於罩殼32前端的聚光器(雷射頭)36所構成。罩殼32之前端安裝有與聚光器36在X軸方向上成行且具有顯微鏡及相機之攝像單元38。
雷射光束產生單元34是如圖2所示,包含有振盪產生YAG雷射或YVO4雷射之雷射振盪器40、重複頻率設定手段42、脈衝寬度調整手段44、及功率調整手段46。雖然並無特別圖示,但雷射振盪器40具有布如士特窗(brewster window),且由雷射振盪器40出射之雷射光束為直線偏光的雷射光束。
藉由雷射光束產生單元34之功率調整手段46調整成預定功率之脈衝雷射光束,藉由聚光器36之鏡子48而被反射,進而再藉由聚光透鏡50將聚光點定位至已固定於支撐台26之被加工物(即SiC基板11)之內部來進行照射。
參照圖3(A),所示為加工對象物之SiC基板11的立體圖。圖3(B)是圖3(A)所示之SiC基板11的正面圖。SiC基板11具有第一面(表面)11a及與第一面11a為相反側之第二面(背面)11b。SiC基板11之表面11a及背面11b是研磨成鏡面。
SiC基板11具有第一定向平面13及與第一定向平面13正交之第二定向平面15。第一定向平面13的長度形成為較第二定向平面15的長度長。
SiC基板11具有相對於表面11a之垂直線17在第二定向平面15方向上傾斜偏角α之c軸19、及與c軸19正交的c面21。c面21是相對於SiC基板11之表面11a而傾斜偏角α。一般來說,在SiC基板11中,與較短之第二定向平面15的伸長方向正交之方向為c軸的傾斜方向。
c面21是在SiC基板11中,在SiC基板11之分子層級上設定成無數個。本實施形態中,是將偏角α設定為4°。然而,偏角α並非受限於4°,可以在例如1°~6°之範圍內自由設定而製造SiC基板11。
再次參照圖1,靜止基台4的左側固定有柱部52,在此柱部52上是透過形成於柱部52之開口53而將按壓機構54搭載成可在上下方向上移動。
參照圖4(A),所示為SiC基板11之正面圖。SiC基板11具有例如約300μm~約1000μm之厚度且將表面11a及背面11b加工成鏡面。
如圖4(B)所示,在SiC基板11之表面11a上藉由晶
膜生長而積層有Si薄板(薄膜)或GaN薄板(薄膜)等之薄板(薄膜)27。薄膜27之厚度是例如大約200μm。
在此,所謂的晶膜生長是一種薄膜結晶成長技術,是在作為基板之結晶之上進行結晶成長,而在基底之基板的結晶面上整齊排列之成長方法。基板與薄膜為相同物質的情況稱為同質磊晶(homo-epitaxial),為相異物質的情況稱為異質磊晶(heteroepitaxial)。
作為結晶成長方法,可採用分子束磊晶法、有機金屬氣相磊晶法、液相磊晶法之任一種。要引發晶膜生長,必須選擇使基板與使其在基板上成長之薄膜為晶格常數幾乎相等之結晶,且必須是取決於溫度之膨脹係數相近之結晶。SiC基板11上透過晶膜生長所積層之薄板27的c軸及c面是與SiC基板11的c軸及c面之方向一致。
在本實施形態之薄板的分離方法中,如圖5所示,是以使SiC基板11之第二定向平面15於X軸方向上排齊的方式,將積層於SiC基板上之薄板27設成朝下而以例如蠟或接著劑固定在支撐台26上。
亦即,如圖6所示,使與形成偏角α之方向Y1正交之方向,換言之,與c軸19相對於SiC基板11之背面11b的垂直線17之與背面11b的交點19a存在的方向正交的方向-亦即箭頭A方向,對齊X軸以將SiC基板11固定於支撐台26。
藉此,雷射光束可沿著與形成有偏角α之方向正交的方向A掃描。換言之,與形成有偏角α之方向Y1正交
的A方向成為支撐台26的加工進給方向。
在本發明之薄板的分離方法中,將從聚光器36出射之雷射光束的掃描方向,作為與SiC基板11之形成有偏角α的方向Y1正交的箭頭A方向是很重要的。
亦即,本發明之薄板的分離方法的特徵在於發現了如下之點:藉由將雷射光束之掃描方向設定成如上述之方向,從形成於SiC基板11之內部的改質層所傳播之裂隙會沿c面21伸長地非常長。
在本實施形態之薄板的分離方法中,首先,實施分離起點形成步驟,前述分離起點形成步驟是將對於已固定在支撐台26之SiC基板11具有穿透性之波長(例如1064nm之波長)的雷射光束之聚光點定位在SiC基板11之第一面(表面)11a的附近,並且相對地移動聚光點與SiC基板11而將雷射光束照射在SiC基板11之背面11b,並形成與背面11b平行之改質層23及從改質層23沿c面21傳播之裂隙25來作為分離起點。
在此分離起點形成步驟之第一實施形態中,如圖7所示,是將雷射光束之聚光點定位在基板11側,而在表面11a附近形成改質層23及從改質層23沿c面21傳播之裂隙25來作為分離起點。
在分離起點形成步驟之第二實施形態中,是將雷射光束之聚光點定位在薄板27側,而在薄板27內形成改質層23及從改質層23沿c面21傳播之裂隙25來作為分離起點。
此分離起點形成步驟包含有改質層形成步驟及分度步驟,該改質層形成步驟是c軸19相對於背面11b之垂直線17傾斜偏角α角度,並在與於c面21及背面11b形成偏角α之方向正交的方向上,亦即與圖6之箭頭Y1方向正交之方向(即A方向)上,將雷射光束之聚光點相對地移動,以在SiC基板11之內部形成改質層23及從改質層23沿c面21傳播之裂隙25;該分度步驟是如圖8所示,在形成有偏角之方向(亦即在Y軸方向)上將聚光點相對地移動而分度移動預定量。
如圖7及圖8所示,當將改質層23在X軸方向上形成為直線狀時,裂隙25即由改質層23的兩側沿c面21傳播而被形成。在本實施形態之薄板的分離方法中,包含分度量設定步驟,其為測量從直線狀之改質層23朝c面方向傳播而形成之裂隙25的寬度,且設定聚光點之分度量。
在分度量設定步驟中,如圖7所示,當將由直線狀之改質層23朝c面方向傳播而形成於改質層23之單側的裂隙25的寬度設為W1時,應分度移動之預定量W2是設定為W1以上且2W1以下。
在此,將理想之實施形態的分離起點形成步驟之雷射加工方法設定如下。
光源:Nd:YAG脈衝雷射
波長:1064nm
重複頻率:80kHz
平均輸出:3.2W
脈衝寬度:4ns
光點點徑:10μm
聚光透鏡之數值孔徑(NA):0.45
分度量:400μm
在上述之雷射加工條件中,圖7中,將由改質層23沿著c面傳播之裂隙25的寬度W1設定為大約250μm,且將分度量W2設定為400μm。
然而,雷射光束之平均輸出並不受限於3.2W,在本實施形態之加工方法中,將平均輸出設定於2W~4.5W而得到了良好的結果。在平均輸出2W時,裂隙25之寬度W1成為大約100μm,在平均輸出4.5W時,裂隙25之寬度W1則成為大約350μm。
在平均輸出小於2W及較4.5W大時,由於無法在SiC基板11之內部形成良好的改質層23,所以照射之雷射光束的平均輸出以在2W~4.5W的範圍內為較理想,在本實施形態中是將平均輸出3.2W之雷射光束照射於SiC基板11。
在Y軸方向上分度進給預定量,並且在SiC基板11之全區域的表面11a附近的位置上複數個改質層23及由改質層23沿c面21延伸之裂隙25的形成結束後,就可以實施賦予外力而從由改質層23及裂隙25所構成之分離起點將薄板27從SiC基板11分離的分離步驟。
此晶圓分離步驟是藉由例如像是圖9所示之按壓機構54而實施。按壓機構54包含有:藉由內置於柱部52內之移動機構而在上下方向上移動的頭部56;及相對於頭部56,
如圖9(B)所示地朝箭頭R方向旋轉之按壓構件58。
如圖9(A)所示,將按壓機構54定位於固定在支撐台26之SiC基板11的上方,並如圖9(B)所示,將頭部56降下直至按壓構件58壓接到積層於SiC基板11之薄板27為止。
在按壓構件58壓接到薄板27的狀態下,當將按壓構件58往箭頭R方向旋轉時,於SiC基板11會產生扭轉應力,並且可以使薄板27從形成有改質層23及裂隙25之分離起點斷裂,而將圖10所示之薄板27從SiC基板11分離。
當將薄板27從SiC基板11分離時,會使SiC基板11之一部分殘存於薄板27之背面。因此,在本實施形態之薄板的分離方法中,在分離步驟實施後,會實施將殘存於薄板27之背面的SiC基板之一部分磨削去除的磨削步驟。
在此磨削步驟中,如圖11所示,實施將薄板27藉由蠟或接著劑等固定於基材(substrate)29上,並以磨削裝置之工作夾台60的保持面60a隔著基材29吸引保持薄板27之保持步驟。
像這樣以工作夾台60隔著基材29保持薄板27,並且如圖12所示,實施以磨削單元62將殘存於薄板27之SiC基板11的一部分11c磨削去除之磨削步驟。
在圖12中,於已固定於磨削單元62之主軸64的前端之輪座66上,是藉由複數個螺絲67而以可裝卸之形式裝設有磨削輪68。磨削輪68是將複數個磨削磨石72於輪基台70之自由端部(下端部)固接成環狀而構成。
在磨削步驟中,是在使工作夾台60朝箭頭a所示
之方向以例如300rpm旋轉時,使磨削輪68朝箭頭b所示之方向以例如6000rpm旋轉,並且驅動圖未示之磨削單元進給機構而使磨削輪68之磨削磨石72接觸殘存於薄板27之背面的SiC基板11之一部分11c。
並且,一面以預定之磨削進給速度(例如0.1μm/s)將磨削輪68磨削進給,一面將殘存於薄板27之背面的SiC基板11之一部分11c磨削去除。藉此,便能夠得到透過晶膜生長所形成之高純度的SiC晶圓。
在分離起點形成步驟之第二實施形態中,將聚光點定位於薄板27側的情況下,會在分離步驟中,使薄板27之一部分殘存於SiC基板11之表面11a側。
從而,在這種情況下,是在磨削步驟中,將殘存於SiC基板11之薄板27的一部分磨削去除。在第二實施形態的情況下,由於能夠維持SiC基板11之原本的厚度,所以具有可以無數次再利用之優點。
即便在採用第一實施形態之分離起點形成步驟的情況下,雖然SiC基板11會因為磨削步驟而慢慢地被薄化,且雖然有所限制但仍然能夠將Sic基板11再利用複數次。
11‧‧‧SiC基板
11a‧‧‧第一面(表面)
11b‧‧‧第二面(背面)
23‧‧‧改質層
25‧‧‧裂隙
27‧‧‧薄板(薄膜)
W1‧‧‧裂隙之寬度
W2‧‧‧應分度移動之預定量(分度量)
X、Y、Z‧‧‧方向
Claims (5)
- 一種薄板的分離方法,是將具有第一面及與該第一面為相反側之第二面、從該第一面到該第二面之c軸、以及與該c軸正交之c面的SiC基板之在該第一面藉由晶膜生長所積層之薄板從SiC基板分離,該薄板的分離方法之特徵在於具備:分離起點形成步驟,將對於SiC基板具有穿透性之波長的雷射光束之聚光點從該第二面定位至SiC基板之該第一面附近,且將該聚光點與SiC基板相對地移動來將該雷射光束照射在該第二面,並形成與該第一面平行之改質層及從該改質層沿c面伸長之裂隙而形成分離起點;及分離步驟,實施該分離起點形成步驟後,賦予外力以由該分離起點將該薄板從SiC基板分離,且該分離起點形成步驟包含:改質層形成步驟,該c軸相對於該第二面之垂直線傾斜偏角角度,並在與於該第二面及該c面之間形成偏角的第二方向正交之第一方向上移動雷射光束的聚光點以形成在第一方向上延伸之直線狀的改質層;及分度步驟,在該第二方向上將該聚光點相對地移動而分度預定量。
- 如請求項1之薄板的分離方法,其中,在該分離起點形成步驟中,該聚光點是定位於該薄板側,且當實施該分 離步驟時,該薄板之一部分會殘存於SiC基板側。
- 如請求項1之薄板的分離方法,其中,在該分離起點形成步驟中,該聚光點是定位於SiC基板側,且當實施該分離步驟時,SiC基板之一部分會殘存於該薄板側。
- 如請求項2之薄板的分離方法,其還具備有磨削步驟,該磨削步驟是在實施該分離步驟後,將殘存於SiC基板之該薄板的一部分磨削去除。
- 如請求項3之薄板的分離方法,其還具備有磨削步驟,該磨削步驟是在實施該分離步驟後,將殘存於該薄板之背面的SiC基板之一部分磨削去除。
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SG10201602313YA (en) | 2016-11-29 |
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CN106057737A (zh) | 2016-10-26 |
MY177241A (en) | 2020-09-09 |
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