SG10201602313YA - Thin plate separating method - Google Patents
Thin plate separating methodInfo
- Publication number
- SG10201602313YA SG10201602313YA SG10201602313YA SG10201602313YA SG10201602313YA SG 10201602313Y A SG10201602313Y A SG 10201602313YA SG 10201602313Y A SG10201602313Y A SG 10201602313YA SG 10201602313Y A SG10201602313Y A SG 10201602313YA SG 10201602313Y A SG10201602313Y A SG 10201602313YA
- Authority
- SG
- Singapore
- Prior art keywords
- thin plate
- separating method
- plate separating
- thin
- separating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
- B26F3/002—Precutting and tensioning or breaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015083642A JP6456228B2 (en) | 2015-04-15 | 2015-04-15 | Thin plate separation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201602313YA true SG10201602313YA (en) | 2016-11-29 |
Family
ID=57043702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201602313YA SG10201602313YA (en) | 2015-04-15 | 2016-03-24 | Thin plate separating method |
Country Status (8)
Country | Link |
---|---|
US (1) | US9941130B2 (en) |
JP (1) | JP6456228B2 (en) |
KR (1) | KR102309388B1 (en) |
CN (1) | CN106057737B (en) |
DE (1) | DE102016205917A1 (en) |
MY (1) | MY177241A (en) |
SG (1) | SG10201602313YA (en) |
TW (1) | TWI663015B (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6429715B2 (en) * | 2015-04-06 | 2018-11-28 | 株式会社ディスコ | Wafer generation method |
JP6478821B2 (en) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | Wafer generation method |
JP6781639B2 (en) * | 2017-01-31 | 2020-11-04 | 株式会社ディスコ | Wafer generation method |
JP6935224B2 (en) * | 2017-04-25 | 2021-09-15 | 株式会社ディスコ | Wafer generation method |
CN110785833A (en) | 2017-06-19 | 2020-02-11 | 罗姆股份有限公司 | Method for manufacturing semiconductor device and wafer bonding structure |
JP6896344B2 (en) * | 2017-09-22 | 2021-06-30 | 株式会社ディスコ | Chip manufacturing method |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US20190363018A1 (en) | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US10940611B2 (en) | 2018-07-26 | 2021-03-09 | Halo Industries, Inc. | Incident radiation induced subsurface damage for controlled crack propagation in material cleavage |
JP7235456B2 (en) * | 2018-08-14 | 2023-03-08 | 株式会社ディスコ | Semiconductor substrate processing method |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2716303B1 (en) * | 1994-02-11 | 1996-04-05 | Franck Delorme | Wavelength tunable distributed Bragg reflector laser with selectively activated virtual diffraction gratings. |
JP2000094211A (en) | 1998-09-22 | 2000-04-04 | Honda Motor Co Ltd | Milling cutter |
JP2000094221A (en) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | Electric discharge wire saw |
JP2005268752A (en) * | 2004-02-19 | 2005-09-29 | Canon Inc | Method of laser cutting, workpiece and semiconductor-element chip |
JP4749799B2 (en) * | 2005-08-12 | 2011-08-17 | 浜松ホトニクス株式会社 | Laser processing method |
WO2008126742A1 (en) * | 2007-04-05 | 2008-10-23 | Cyber Laser Inc. | Laser machining method, laser cutting method, and method for dividing structure having multilayer board |
JP2009135448A (en) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor substrate, and method for manufacturing semiconductor device |
WO2009149299A1 (en) | 2008-06-04 | 2009-12-10 | Sixpoint Materials | Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
JP2011040564A (en) * | 2009-08-11 | 2011-02-24 | Toshiba Corp | Method and apparatus for manufacturing semiconductor element |
JP2011077102A (en) | 2009-09-29 | 2011-04-14 | Toyoda Gosei Co Ltd | Wafer, group iii nitride compound semiconductor element, and methods of manufacturing them |
JP2011077325A (en) | 2009-09-30 | 2011-04-14 | Sumitomo Electric Ind Ltd | Method of manufacturing group iii nitride semiconductor substrate |
JP2011165766A (en) * | 2010-02-05 | 2011-08-25 | Disco Abrasive Syst Ltd | Method of processing optical device wafer |
JP5558128B2 (en) * | 2010-02-05 | 2014-07-23 | 株式会社ディスコ | Processing method of optical device wafer |
JP5480169B2 (en) * | 2011-01-13 | 2014-04-23 | 浜松ホトニクス株式会社 | Laser processing method |
CN103380482B (en) * | 2011-02-10 | 2016-05-25 | 信越聚合物株式会社 | Single crystallization base plate manufacture method and inner upgrading layer form single crystals parts |
JP2012238746A (en) * | 2011-05-12 | 2012-12-06 | Disco Abrasive Syst Ltd | Division method of optical device wafer |
JP5904720B2 (en) * | 2011-05-12 | 2016-04-20 | 株式会社ディスコ | Wafer division method |
JP5917862B2 (en) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | Processing object cutting method |
WO2013126927A2 (en) * | 2012-02-26 | 2013-08-29 | Solexel, Inc. | Systems and methods for laser splitting and device layer transfer |
KR20140011071A (en) * | 2012-07-17 | 2014-01-28 | 서울바이오시스 주식회사 | Method for separating epitaxial growth layer from growth substrate |
JP6180223B2 (en) | 2013-08-06 | 2017-08-16 | 株式会社ディスコ | Wafer manufacturing method |
JP6358941B2 (en) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
JP6395633B2 (en) * | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6425606B2 (en) * | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | Wafer production method |
JP6472333B2 (en) * | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | Wafer generation method |
JP6482389B2 (en) * | 2015-06-02 | 2019-03-13 | 株式会社ディスコ | Wafer generation method |
JP6482423B2 (en) * | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | Wafer generation method |
-
2015
- 2015-04-15 JP JP2015083642A patent/JP6456228B2/en active Active
-
2016
- 2016-02-25 TW TW105105705A patent/TWI663015B/en active
- 2016-03-22 KR KR1020160033877A patent/KR102309388B1/en active IP Right Grant
- 2016-03-22 MY MYPI2016701027A patent/MY177241A/en unknown
- 2016-03-24 SG SG10201602313YA patent/SG10201602313YA/en unknown
- 2016-03-30 CN CN201610190979.2A patent/CN106057737B/en active Active
- 2016-04-08 DE DE102016205917.3A patent/DE102016205917A1/en active Pending
- 2016-04-14 US US15/098,945 patent/US9941130B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201641206A (en) | 2016-12-01 |
US20160307763A1 (en) | 2016-10-20 |
KR20160123224A (en) | 2016-10-25 |
US9941130B2 (en) | 2018-04-10 |
JP2016207702A (en) | 2016-12-08 |
JP6456228B2 (en) | 2019-01-23 |
MY177241A (en) | 2020-09-09 |
CN106057737B (en) | 2021-06-29 |
TWI663015B (en) | 2019-06-21 |
DE102016205917A1 (en) | 2016-10-20 |
KR102309388B1 (en) | 2021-10-05 |
CN106057737A (en) | 2016-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201602313YA (en) | Thin plate separating method | |
ZA201708549B (en) | Waste separation method | |
GB201503534D0 (en) | Novel method | |
GB201502645D0 (en) | Method | |
GB201410262D0 (en) | Novel method | |
GB201512372D0 (en) | Novel method | |
GB201502810D0 (en) | Method | |
EP3214072A4 (en) | Method for producing -caprolactam | |
GB201501941D0 (en) | Method | |
EP3304212A4 (en) | Separating device | |
EP3213831A4 (en) | Progressive processing method | |
GB201506870D0 (en) | Method | |
GB201500427D0 (en) | Method | |
EP3265120C0 (en) | Method | |
GB201506869D0 (en) | Method | |
GB201507581D0 (en) | Method | |
GB201501565D0 (en) | Method | |
EP3345996A4 (en) | Method for producing -glutamyl-valyl-glycine | |
GB201510649D0 (en) | Method | |
EP3348544A4 (en) | Method for producing -caprolactam | |
EP3381911A4 (en) | Method for producing -valerolactone | |
LT3250490T (en) | Acoustic separating method | |
GB201801025D0 (en) | Multi-dimsensional ion separation | |
GB201509961D0 (en) | Method | |
GB201503792D0 (en) | Method |