US20160293682A1 - Organic light-emitting display device - Google Patents

Organic light-emitting display device Download PDF

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Publication number
US20160293682A1
US20160293682A1 US15/036,307 US201415036307A US2016293682A1 US 20160293682 A1 US20160293682 A1 US 20160293682A1 US 201415036307 A US201415036307 A US 201415036307A US 2016293682 A1 US2016293682 A1 US 2016293682A1
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Prior art keywords
organic light
display device
emitting display
coating
layer
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Abandoned
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US15/036,307
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English (en)
Inventor
June Hyong Park
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Corning Precision Materials Co Ltd
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Corning Precision Materials Co Ltd
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Assigned to CORNING PRECISION MATERIALS CO., LTD. reassignment CORNING PRECISION MATERIALS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PARK, JUNE HYONG
Publication of US20160293682A1 publication Critical patent/US20160293682A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H01L27/3246—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H01L27/3276—
    • H01L51/5275—
    • H01L51/5284—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements

Definitions

  • the present invention relates to an organic light-emitting display device, and more particularly, to an organic light-emitting display device having excellent efficiency due to improved luminance.
  • an organic light-emitting diode includes an anode, an emission layer, and a cathode.
  • OLED organic light-emitting diode
  • a voltage is induced between the anode and the cathode, holes from the anode migrate to the emission layer through a hole injection layer and a hole transport layer, and electrons from the cathode migrate to the emission layer through an electron injection layer and an electron transport layer.
  • the electrons and the holes that have migrated into the emission layer recombine with each other, thereby generating excitons.
  • excitons transit from an excited state to a ground state, light is emitted.
  • Organic light-emitting display devices employing such OLEDs are divided into passive matrix organic light-emitting display devices and active matrix organic light-emitting display devices according to modes for driving N ⁇ M number of pixels arranged in a matrix pattern utilized thereby.
  • a pixel electrode defining an emission region and a unit pixel driving circuit for applying an electric current or a voltage to the pixel electrode are disposed in a unit pixel area.
  • the unit pixel driving circuit includes at least two thin-film transistors (TFTs) and a single capacitor to enable the supply of a certain amount of electric current, irrespective of the number of pixels, thereby obtaining a reliable level of luminance.
  • TFTs thin-film transistors
  • Such active matrix type organic light-emitting display devices are advantageously adaptable to high resolution and large scale displays due to having reduced power consumption.
  • the refractive index of the internal organic light-emitting layer ranges from 1.7 to 1.8, whereas the refractive index of indium tin oxide (ITO), generally used for the anode, is about 1.9.
  • the two layers have a significantly low thickness, ranging from 200 nm to 400 nm, and the refractive index of the glass used for the glass substrate is about 1.5, a planar waveguide is thereby formed inside the OLED. It is estimated that the ratio of light lost in the internal waveguide mode due to the above-described reasons is about 45%.
  • the refractive index of the glass substrate is about 1.5 and the refractive index of the ambient air is 1.0, when light exits the interior of the glass substrate, a beam of light having an angle of incidence greater than a critical angle may be totally reflected and trapped inside the glass substrate. The ratio of light trapped in this manner is commonly about 35%, and only about 20% of generated light may be emitted out.
  • Structures such as those for scattering particles, irregular structural features, or the like, are commonly formed in front of OLEDs in order to improve the light emission efficiency of the OLEDs according to the related art.
  • such structures may cause diffused reflection on the background of a screen, and thus are regarded as being unsuitable for use in displays.
  • a TFT structure may degrade the light emission efficiency of OLEDs, which may be problematic.
  • the present invention has been made in consideration of the above problems occurring in the related art, and the present invention proposes an organic light-emitting display device having excellent efficiency due to having improved luminance.
  • the present invention provides an organic light-emitting display device including: a substrate; a plurality of thin-film transistors (TFTs) respectively formed on a plurality of pixel areas defined by intersections between gate lines and data lines formed on the substrate; a plurality of organic light-emitting diodes (OLEDs) formed on the TFTs and electrically connected to the TFTs; black matrix layers alternating with OLEDs; and multilayered coating films coating surfaces of the black matrix layers respectively, each of the multilayered coating films including coating layers having different refractive indices.
  • TFTs thin-film transistors
  • OLEDs organic light-emitting diodes
  • the coating layers may include: a first coating layer coating the surface of the black matrix layer; and a second coating layer coating the first coating layer and including a material having a higher refractive index than that of the first coating layer.
  • the first coating layer may include one selected from among acrylic polymeric materials, SiOx, MgF2, and photosensitive low-refractive photoresists.
  • the second coating layer may include one selected from among metal oxides, metal nitrides, and polyimide-based high-refractive polymeric materials.
  • the thicknesses of each of the multilayered coating films may range from 0.1 ⁇ m to 5 ⁇ m.
  • Each of the multilayered coating films may have a trench in the upper surface thereof, the trench exposing the black matrix layer in a linear shape.
  • a passivation layer may be provided between the plurality of TFTs and the plurality of OLEDs.
  • the black matrix layers may be formed to correspond to the plurality of gate lines and data lines.
  • Each of the black matrix layers may include an organic or inorganic insulating material.
  • the organic light-emitting display device may have a bottom emission structure allowing light to be emitted out through the substrate.
  • the multilayered coating film including coating layers having different refractive indices is formed on the surface of the black matrix layer dividing the OLEDs formed on the pixel areas so that light emitted laterally from the OLEDs due to a waveguide effect and lost by the black matrix layer is refracted forwards.
  • This structure makes it possible to obtain a light-extraction effect at the black matrix layer, thereby improving the luminance of the organic light-emitting display device.
  • an organic light-emitting display device exhibiting excellent light emission efficiency can be realized.
  • FIG. 1 is a schematic diagram illustrating an organic light-emitting display device according to embodiments of the present invention.
  • an organic light-emitting display device 100 includes a substrate 110 , thin-film transistors (TFTs) 120 , organic light-emitting diodes (OLEDs) 130 , black matrix layers 140 , and multilayered coating films 150 .
  • TFTs thin-film transistors
  • OLEDs organic light-emitting diodes
  • the substrate 110 serves as a passage through which light generated by the OLEDs 130 is emitted out.
  • the substrate 110 is disposed forwardly of the OLEDs 130 (a lower side in the drawing).
  • the substrate 110 has a plurality of gate lines (not shown) for the transmission of gate signals and a plurality of data lines (not shown) for the transmission of data signals on the upper surface thereof.
  • the gate lines are arranged in parallel with each other, for example, in the horizontal direction, and the data lines are in arranged parallel with each other in the vertical direction.
  • a plurality of pixel areas are defined on the substrate by the intersections between the gate lines and the data lines.
  • the substrate 110 is a transparent substrate that may be formed of a glass material mainly composed of, for example, SiO 2 .
  • the substrate 110 is not limited thereto, and may be formed of a transparent plastic material.
  • a buffer layer (not shown) formed of, for example, SiO 2 or SiN x , may be formed on the substrate 110 to maintain the flatness of the substrate 110 and prevent impurities from penetrating into the substrate.
  • the TFTs 120 are respectively formed on the plurality of pixel areas defined by the intersections between the gate lines (not shown) and the data lines (not shown) formed on the substrate 110 .
  • a switching transistor and a driving transistor, components of the TFT 120 , and a storage capacitor (not shown) are formed on each of the pixel areas.
  • the TFT 120 may include a semiconductor layer, a gate dielectric film, a gate electrode, an interlayer dielectric film, a source electrode, and a drain electrode.
  • the semiconductor layer is formed on the buffer layer (not shown) in a certain pattern.
  • Such a semiconductor layer may be formed of an inorganic semiconductor material, such as amorphous silicon or poly-crystal silicon, or an organic semiconductor material, and includes a source region, a drain region, and a channel region.
  • the gate dielectric formed of, for example, SiO 2 or SiN x is formed on the semiconductor layer, and the gate electrode is formed in a certain region of the upper portion of the gate dielectric film.
  • the gate electrode is connected to the gate line (not shown), through which ON/OFF signals are applied to the TFT 120 .
  • the interlayer dielectric film is formed on the gate electrode such that the source and drain electrodes respectively abut the source and drain regions of the semiconductor layer via contact holes.
  • the passivation film 121 may be an organic or inorganic insulation film.
  • the inorganic insulation film may contain SiO 2 , SiN x , SiON, Al 2 O 3 , TiO 2 , Ta 2 O 5 , HfO 2 , ZrO 2 , BST, PZT, and the like, and the organic insulation film may contain at least one selected from among general-purpose polymers, such as PMMA and PS, polymeric derivatives having phenol groups, acrylic polymers, aryl ether based polymers, amide based polymers, fluorine based polymers, p-xylene based polymers, vinyl alcohol based polymers, and blends thereof.
  • the passivation film 121 may be formed as a composite structure consisting of an inorganic insulation layer and an organic insulation layer.
  • the OLEDs 130 are formed on the upper portion of the TFT 120 , more particularly, on the passivation film 121 .
  • the OLEDs 130 are respectively formed on the pixel areas, such that an OLED in each pixel area is electrically connected to the TFT 120 formed on the same pixel area.
  • each of the OLEDs 130 includes a first electrode, an organic light-emitting layer, and a second electrode.
  • the first electrode is formed on the passivation film 121 to match the corresponding pixel area.
  • the first electrode is electrically connected to the drain electrode of the TFT 120 via a contact hole.
  • the first electrode is a transparent electrode acting as an anode of the OLED.
  • the first electrode may be formed of, for example, indium tin oxide (ITO) having a greater work function to facilitate hole injection into the OLED.
  • the organic light-emitting layer is formed on the first electrode.
  • the organic light-emitting layer may include a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer, sequentially laminated on the first electrode.
  • the light-emitting layer may have, for example, a laminated structure including a high-molecular light-emitting layer that emits blue light and a low-molecular light-emitting layer that emits orange-red light, as well as a variety of other structures, to emit white light.
  • the organic light-emitting layer may have a tandem structure. That is, the organic light-emitting layer may be formed as a plurality of organic light-emitting layers, and alternate with interconnecting layers acting as charge generation layers.
  • the second electrode is formed on the organic light-emitting layer.
  • the second electrode may be formed on the entire area of the plurality of OLEDs 130 .
  • the second electrode acts as a cathode of the OLED 130 , and may be a metal thin film formed of Al, Al:Li or Mg:Ag that has a smaller work function in order to facilitate electron injection into the organic light-emitting layer.
  • the black matrix layers 140 are formed to alternate with the OLEDs 130 .
  • the black matrix layers 140 are arranged to correspond to the plurality of gate lines (not shown) and the plurality of data lines (not shown) formed on the substrate 110 . That is, the black matrix layers 140 are provided in a pattern, similar to banks, surrounding the pixel areas defined by the intersections between the gate lines (not shown) and the data lines (not shown), thereby defining respective pixel areas.
  • the OLED 130 is formed on the passivation film 121 that is a pixel area exposed as an open region by the black matrix layer 140 .
  • the black matrix layer 140 may be formed of an organic dielectric material having heat resistance and solvent resistance, such as an acrylic resin, a polyimide resin, or the like, or an inorganic dielectric material, such as SiO 2 , TiO 2 , or the like.
  • each of the multilayered coating films 150 consists of coating layers having different refractive indices.
  • the thickness of the multilayered coating film 150 ranges from 0.1 ⁇ m to 5 ⁇ m.
  • the multilayered coating film 150 may include a first coating layer 151 and a second coating layer 152 .
  • the first coating layer is formed to coat the surface of the black matrix layer 140 .
  • the first coating layer 151 may be formed of a material having a lower refractive index than the refractive index of the second coating layer 152 .
  • the first coating layer 151 may be formed of one selected from among acrylic polymeric material, SiO x , MgF 2 , and a photosensitive, low-refractive photoresist.
  • the first coating layer 151 serves to allow light refracted from an edge of the pixel area of the first coating layer 151 , i.e. a lateral side of the OLED 130 , by the second coating layer 152 to propagate linearly.
  • the second coating layer 152 is formed to coat the surface of the first coating layer 151 .
  • the multilayered coating film 150 forms a two-layer structure.
  • the second coating layer 152 may be formed of a material having a higher refractive index than the refractive index of the first coating layer 151 .
  • the second coating layer 152 may be formed of one selected from the group consisting of metal oxides, such as ZnO or TiO 2 , metal nitrides, such as Si 3 N 4 , and a polyimide-based high-refractive polymeric material.
  • the second coating layer 152 serves to trap light emitted laterally from the OLED 130 due to a waveguide effect.
  • the multilayered coating film 150 having the first coating layer 151 and the second coating layer 152 with different refractive indices is formed on the surface of the black matrix layer 140 , it is possible to refract light forwardly that would otherwise be emitted from the OLEDs 130 laterally due to the waveguide effect and lost by the black matrix layer 140 . That is, when the multilayered coating film 150 is formed on the surface of the black matrix layer 140 , a light-extraction effect at the black matrix layer 140 can be obtained, thereby improving the overall light-extraction efficiency of the OLEDs 130 , and the luminance of the organic light-emitting display device 100 is thus improved, eventually improving the light emission efficiency of the organic light-emitting display device 100 .
  • a trench 153 i.e. a “V” type wedge or groove (based on a cross section), is formed in one side of the multilayered coating film 150 that does not abut the OLED 130 , i.e. in the upper surface of the multilayered coating film 150 on the basis of the drawing.
  • the trench 153 exposes a linearly shaped portion of the black matrix layer 140 .
  • the trench 153 serves to reflect rearwardly-refracted light in the forward direction again, thereby further improving the light-extraction efficiency at the black matrix layer 140 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
US15/036,307 2013-11-14 2014-11-12 Organic light-emitting display device Abandoned US20160293682A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2013-0138383 2013-11-14
KR20130138383A KR101504117B1 (ko) 2013-11-14 2013-11-14 유기발광 디스플레이 장치
PCT/KR2014/010865 WO2015072749A1 (ko) 2013-11-14 2014-11-12 유기발광 디스플레이 장치

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US (1) US20160293682A1 (ja)
JP (1) JP2016537774A (ja)
KR (1) KR101504117B1 (ja)
CN (1) CN105723541A (ja)
WO (1) WO2015072749A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180033848A1 (en) * 2016-08-01 2018-02-01 Samsung Display Co., Ltd. Organic light emitting diode display
US10211266B2 (en) * 2015-12-25 2019-02-19 Interface Optoelectronic (Chengdu) Co., Ltd. Organic light-emitting diodes touch display panel and electronic device using same
US10310654B2 (en) * 2015-07-07 2019-06-04 Alps Alpine Co., Ltd. Input device having flexible circuit board
US20190195456A1 (en) * 2017-12-21 2019-06-27 Lumileds Holding B.V. Lighting device with switching material
CN110456588A (zh) * 2018-05-04 2019-11-15 元太科技工业股份有限公司 电泳显示装置
US11258027B2 (en) 2018-10-25 2022-02-22 Beijing Boe Technology Development Co., Ltd. Quantum dot array substrate having photosensitive ligand bonded to quantum dot and manufacturing method therefor, and display device
US11489095B2 (en) 2017-12-21 2022-11-01 Lumileds Llc Method of addressing an LED array with light intensity adaptive LED sidewalls

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101828330B1 (ko) * 2015-08-19 2018-02-13 경북대학교 산학협력단 쌍극자 제어층을 포함한 평면 액정-게이트-전계효과 트랜지스터 및 이를 이용한 초감도 촉각센서
KR102532101B1 (ko) * 2016-12-28 2023-05-15 엘지디스플레이 주식회사 유기발광표시장치 및 그의 제조방법
KR102467651B1 (ko) * 2017-07-27 2022-11-16 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN109757118B (zh) * 2017-09-04 2021-09-03 京东方科技集团股份有限公司 显示基板和显示设备
US20230163264A1 (en) * 2020-12-26 2023-05-25 BOE MLED Technology Co., Ltd. Display substrate and method for manufacturing the same, and display apparatus
CN112820837B (zh) * 2021-01-05 2022-09-09 武汉华星光电半导体显示技术有限公司 一种显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060027817A1 (en) * 2001-07-27 2006-02-09 Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation Light emitting device, semiconductor device, and method of fabricating the devices
US7787168B2 (en) * 2006-08-07 2010-08-31 Samsung Electronics Co., Ltd. Display device and method for fabricating the same
US20120187388A1 (en) * 2001-06-20 2012-07-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US20130126839A1 (en) * 2010-10-15 2013-05-23 Panasonic Corporation Organic light-emitting panel, manufacturing method thereof, and organic display device
US20140361260A1 (en) * 2013-06-07 2014-12-11 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4222339B2 (ja) * 2002-10-03 2009-02-12 セイコーエプソン株式会社 表示パネル及びその表示パネルを備えた電子機器
JP4252297B2 (ja) * 2002-12-12 2009-04-08 株式会社日立製作所 発光素子およびこの発光素子を用いた表示装置
US7227306B2 (en) * 2003-08-28 2007-06-05 Samsung Sdi Co., Ltd. Organic electroluminescence display having recessed electrode structure
JP2005321670A (ja) * 2004-05-11 2005-11-17 Sony Corp 薄膜半導体装置、液晶表示装置及び画像プロジェクタ装置
JP4917833B2 (ja) * 2005-06-29 2012-04-18 エルジー ディスプレイ カンパニー リミテッド 有機ｅｌディスプレイ及びその製造方法
JP5160754B2 (ja) * 2006-01-31 2013-03-13 エルジー ディスプレイ カンパニー リミテッド Ｅｌ装置
JP4809186B2 (ja) * 2006-10-26 2011-11-09 京セラ株式会社 有機ｅｌディスプレイおよびその製造方法
KR20080067158A (ko) * 2007-01-15 2008-07-18 삼성전자주식회사 표시장치
JP2009070704A (ja) 2007-09-13 2009-04-02 Casio Comput Co Ltd 表示装置及びその製造方法
KR101147428B1 (ko) * 2009-02-09 2012-05-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP2010244697A (ja) * 2009-04-01 2010-10-28 Seiko Epson Corp 有機ｅｌ装置、有機ｅｌ装置の製造方法、電子機器
JP2011096376A (ja) * 2009-10-27 2011-05-12 Seiko Epson Corp 光学装置、その製造方法、および電子機器
KR20110058126A (ko) * 2009-11-25 2011-06-01 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101349143B1 (ko) * 2010-03-30 2014-01-08 삼성디스플레이 주식회사 유기 발광 디스플레이 장치의 제조 방법
KR101756662B1 (ko) * 2010-12-15 2017-07-11 엘지디스플레이 주식회사 배면 발광형 유기 발광 표시 장치 및 이의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120187388A1 (en) * 2001-06-20 2012-07-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US20060027817A1 (en) * 2001-07-27 2006-02-09 Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation Light emitting device, semiconductor device, and method of fabricating the devices
US7787168B2 (en) * 2006-08-07 2010-08-31 Samsung Electronics Co., Ltd. Display device and method for fabricating the same
US20130126839A1 (en) * 2010-10-15 2013-05-23 Panasonic Corporation Organic light-emitting panel, manufacturing method thereof, and organic display device
US20140361260A1 (en) * 2013-06-07 2014-12-11 Samsung Display Co., Ltd. Organic light-emitting display apparatus and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
US10310654B2 (en) * 2015-07-07 2019-06-04 Alps Alpine Co., Ltd. Input device having flexible circuit board
US10211266B2 (en) * 2015-12-25 2019-02-19 Interface Optoelectronic (Chengdu) Co., Ltd. Organic light-emitting diodes touch display panel and electronic device using same
US10741627B2 (en) * 2016-08-01 2020-08-11 Samsung Display Co., Ltd. Organic light emitting diode display
US20180033848A1 (en) * 2016-08-01 2018-02-01 Samsung Display Co., Ltd. Organic light emitting diode display
US10892387B2 (en) * 2017-12-21 2021-01-12 Lumileds, LLC Lighting device with switching material
US20190195456A1 (en) * 2017-12-21 2019-06-27 Lumileds Holding B.V. Lighting device with switching material
US11437553B2 (en) 2017-12-21 2022-09-06 Lumileds Llc Lighting device with switching material
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CN110456588A (zh) * 2018-05-04 2019-11-15 元太科技工业股份有限公司 电泳显示装置
US11258027B2 (en) 2018-10-25 2022-02-22 Beijing Boe Technology Development Co., Ltd. Quantum dot array substrate having photosensitive ligand bonded to quantum dot and manufacturing method therefor, and display device

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