US20160122866A1 - Evaporation system and evaporation method - Google Patents
Evaporation system and evaporation method Download PDFInfo
- Publication number
- US20160122866A1 US20160122866A1 US14/851,472 US201514851472A US2016122866A1 US 20160122866 A1 US20160122866 A1 US 20160122866A1 US 201514851472 A US201514851472 A US 201514851472A US 2016122866 A1 US2016122866 A1 US 2016122866A1
- Authority
- US
- United States
- Prior art keywords
- evaporation
- holes
- heater
- source plate
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Definitions
- the present disclosure relates to an evaporation system and an evaporation method, and more particularly to an evaporation technique for large-area thin film deposition capable of achieving precise film quality control with improved high deposition rate and material utilization ratio.
- point evaporation sources In a conventional film deposition technique for OLED devices, it is common to use point evaporation sources. Nevertheless, the adopting of such point evaporation source can only be suitably applied in an evaporation process for forming thin films onto a small-size substrate, such as a piece of 370 mm ⁇ 470 mm substrate, with a low material utilization rate ranged between 5% to 6%, and a low deposition rate of about 0.3 to 0.8 nm/s in a comparatively longer tact time, i.e.
- the powder-like or granular-like evaporation material Since in the early stage the powder-like or granular-like evaporation material is just started being heated and thus the evaporation process is in a transient period when the consequent vapor flow rate is increasing gradually, the vapor flow that is increasing can cause unstable film deposition rate which will eventually cause film to be formed non-uniformly on the substrate. Therefore, at early stage of an evaporation process, the evaporation source should be shielded and covered until an equilibrium vapor saturation has been reached and thereby the resulting deposition rate is stabled, that is when the shutter can be opened for enabling an evaporation process.
- the cosine law of distribution angle must be considered as the larger the substrate to be deposited is, the larger the distance between the evaporation source and the substrate should be.
- the size of the shutter is increased to cope with the larger substrate. For instance, for performing an evaporation process on a substrate that is longer than 1 meter, the distance between the used evaporation source and the substrate must be over 1 meter. Consequently, the film can still be deposited on the substrate non-uniformly as it can take too long for the one-meter-long substrate to travel passing the deposition chamber during the shutter is being activated to open and close in a reciprocation manner.
- the present disclosure provides an evaporation system for performing an evaporation process upon a surface of an evaporation target substrate, which comprises: an evaporation source plate, an evaporation material, a heater, a shutter device, and a transmission device.
- the evaporation source plate is configured with at least one planar surface; the evaporation material is coated on the planar surface of the evaporation source plate; the heater is disposed at a position for allowing the same to heat the evaporation source plate and thus transform the solid state evaporation material into its gaseous state; the shutter device is formed with a plurality of holes while being arranged at a position between the evaporation source plate and the evaporation target substrate; and the transmission device is coupled to the shutter device for controlling the opening/closing of the shutter device so as to allow the gaseous evaporation material to travel passing the holes and thereby reaching the surface of the evaporation target substrate for film deposition.
- the present disclosure further provides an evaporation method for performing an evaporation process upon a surface of an evaporation target substrate. Operationally, first an evaporation material and an evaporation source plate are provided, while allowing the evaporation material to be coated on a surface of the evaporation source plate, and then the evaporation source plate is heated by a heater for transforming the evaporation material from its solid state to its gaseous state.
- a shutter device with a plurality of holes is provided for enabling the gaseous evaporation material to travel passing the holes and thus reaching the surface of the evaporation target substrate for film deposition, whereas the shutter device is coupled to a transmission device which is used for controlling the opening/closing of the holes of the shutter device.
- FIG. 1 is a schematic diagram showing an evaporation system according to an embodiment of the present disclosure.
- FIG. 2 is a schematic diagram showing an evaporation system according to another embodiment of the present disclosure whereas its shutter device is closed.
- FIG. 3 is a schematic diagram showing the evaporation system of FIG. 2 where its shutter device is opened.
- FIG. 4 is a flow chart depicting steps performed in an evaporation method of the present disclosure.
- FIG. 1 is a schematic diagram showing an evaporation system according to a first embodiment of the present disclosure.
- the evaporation source plate 110 is substantially a source plate having at least one surface that is covered with an evaporation material 111 in a manner selected from the group consisting of: coating, inkjet printing and evaporation and the like, but is not limited thereby.
- evaporation source plates 110 that are provided for various evaporation materials 111 to dispose thereon.
- the surface of the evaporation source plate 110 provided for the evaporation material 111 to dispose thereon can be a surface selected from a planar surface, a smooth surface, a rough surface, and a pitted surface and correspondingly, the evaporation material 111 can be formed as a film with a planar surface, a smooth surface, a rough surface, or a pitted surface, or can be disposed on the surface of the source plate 110 into an array pattern composed of points, lines or planes of the evaporation material 111 by a means selected from the group consisting of: coating, inkjet printing and evaporation.
- the evaporation source plate 110 is made of a material with a specific heat resistance.
- the melting point of the evaporation source plate should at least be higher than the working temperature of the evaporation material 111 in the evaporation process.
- the evaporation material 111 can be a pure substance or a composition of various substances, such as an evaporation material for forming copper indium gallium selenide (CIGS) films or an organic light-emitting layer for emitting red, green or blue light.
- the evaporation material 111 is coated on a surface of the evaporation source plate 110 for forming a layer of evaporation material thereon, and for allowing the evaporation material 111 after being evaporated into a gaseous state to be distributed onto the target substrate 120 for film deposition.
- an evaporation process is performed inside a vacuum evaporation chamber 130 , while an evaporation source plate 110 which can be a two-dimensional planar structured crucible for housing an evaporation material 111 is placed at the lower portion of the vacuum chamber 130 .
- the surface of the evaporation source plate 110 provided for the evaporation material 111 to dispose thereon can be a smooth surface, a rough surface, a surface with grooved, or a surface with array of blind holes and blind slots.
- a heater 140 being disposed at a position under the evaporation source plate 110 for allowing the same to heat the evaporation material 111 disposed on the evaporation source plate 110 , and thus transforming the solid-state evaporation material 111 into its gaseous state.
- a cooling device 150 being attached to the back of the target substrate 120 for cooling the same.
- the shutter device 160 is disposed at a position between the evaporation source plate 110 and the evaporation target substrate 120 , and thereby, there is an enclosed heating area 112 being formed by the shutter device 160 and the evaporation source plate 110 .
- the shutter device 160 further comprises a shutter plate 161 and a diffuser plate 162 in a manner that shutter plate 161 is coupled to a transmission device 170 .
- the shutter plate 161 is disposed close to a side of the target substrate 120 while the diffuser plate 162 is disposed on top of the evaporation source plate 110 .
- the shutter device 160 Before heating, the shutter device 160 is closed that the shutter plate 161 is arranged at a position for allowing the diffuser plate 162 to be shielded thereby, and thus enabling a confined enclosed space, i.e. the enclosed heating area 112 , to be formed between the evaporation source plate 110 and the shutter device 160 .
- the heater 140 is then being activated for heating the evaporation source plate 110 , whereas the heater 140 can be an infrared (IR) heater, a radio frequency (RF) heater, a microwave (MW) heater or a high-power heater.
- IR infrared
- RF radio frequency
- MW microwave
- the heater 140 is being activated to perform a heating procedure at a rapid rate, likely 100° C./sec, for allowing the evaporation material 111 to reach its evaporating temperature quickly, likely within 5 seconds. As soon as the evaporation material 111 is heated by the heater 140 to its evaporating temperature, the evaporation material 111 is transformed from its solid state into its gaseous state for starting to fill the enclosed heating area 112 with the vaporized evaporation material 111 .
- the transmission device 170 is activated for enabling the shutter plate 161 to open in a flash so as to expose the holes 1621 formed on the diffuser plate 162 for the gaseous evaporation material 111 to flow passing through and reach the surface of the target substrate 120 .
- the flash evaporation effect happened when the high-pressure vapor flow of the gaseous evaporation material 111 flows into the vacuum chamber 130 of lower pressure and also by the sizes, shapes and distribution of the holes 1621 on the diffuser plate 162 well designed, an uniform distributed vapor laminar flow can be achieved so as to form a uniform film deposition on the target substrate 120 .
- the transmission device 170 can be a manual transmission device, a ball screw transmission device, or a cam driving device. Nevertheless, different transmission devices will correspondingly have different configurations of power sources and driving mechanisms.
- a motor 170 is disposed outside the evaporation chamber 130 while allowing the driving force of the motor 171 to be fed to a ball nut 173 by a gear set or a pulley set 172 .
- the rotating ball nut 173 will bring along the ball screw rod 174 to move left or right, and thus enabling an upper panel 161 that is fixedly attached to the ball screw rod 174 to be moved by a displacement C.
- an evaporation source plate 210 that is provided for an evaporation material 211 to be disposed thereon is placed inside a vacuumed evaporation chamber 230 , whereas the evaporation source plate 210 is disposed on top of a heater 240 while allowing the evaporation source plate 210 to be confined by a shutter device 260 that is arranged above the evaporation source plate 210 .
- a cooling device 250 being disposed at the back of the target substrate 220 for cooling the same.
- the shutter device 260 is a composition of an upper panel 261 and a lower panel 262 , while both of the two panels 261 , 262 are formed respectively with a plurality of holes. Moreover, the upper panel 261 is disposed close to a side of the target substrate 220 while the lower panel 262 is disposed on top of the evaporation source plate 210 . As shown in FIG. 2 , the shutter device 260 is closed before heating, while the holes 2611 on the upper panel 261 are not aligned with holes 2621 on the lower panel 262 , so that an enclosed space 212 is formed on top of the evaporation source plate 210 . In addition, there is at least one panel that is selected from the upper panel 261 and the lower panel 262 is arranged coupling to a transmission device 270 .
- the upper panel 261 and the lower panel 262 remain at their respective initial positions without movement, i.e. the holes of the upper panel 261 and the lower panel 262 are not aligned with one another and thus are not in communication with one another, so that the space above the evaporation source plate 210 is an enclosed space, i.e. the enclosed heating area 212 .
- the evaporation material 211 is gradually being heated to its evaporating temperature and thus starts filling the confined enclosed heating area 212 with gaseous evaporation material 211 .
- the transmission device 270 is activated for enabling the either the upper panel 261 or the lower panel 262 to move in a flash in a manner that the holes of the upper panel 261 and the lower panel 262 are aligned with one another and thus are in communication with one another, and thus the gaseous evaporation material 211 can be allowed to flow into the evaporation chamber 230 where the pressure is lower for enabling a flash evaporation effect, as shown in FIG. 3 .
- a uniform distributed vapor laminar flow can be achieved so as to form a uniform film deposition on the target substrate 220 .
- the transmission device 270 is composed of: a motor 271 , a gear/pulley set 272 , a ball nut 273 , and a ball screw rod 274 .
- the upper panel 261 in FIG. 3 is fixedly coupled to the ball screw rod 274 , the upper panel 261 can be brought along to move by a displacement C by the moving ball screw rod 274 .
- the configuration of the transmission device 270 is about the same as the transmission device 170 shown in FIG. 1 , but is different in that: the ball screw rod 274 is arranged extending from one side of the upper panel 261 to an opposite side thereof.
- FIG. 4 is a flow chart depicting steps performed in an evaporation method of the present disclosure.
- the evaporation method 400 of FIG. 4 comprises the steps of:
- the evaporation chamber 130 having the evaporation source plate 110 that is coated with the evaporation material 111 is provided, while the shutter device 160 is closed by the transmission device 170 , i.e. the holes 1621 on the diffuser plate 162 is shielded by the shutter plate 161 ; and then the heater 140 is activated for heating the evaporation material 111 rapidly to its evaporating temperature.
- the heater 140 which can be an infrared (IR) heater, a radio frequency (RF) heater, a microwave (MW) heater or a high-power heater, is being activated to perform a heating procedure at a rapid rate, likely 100° C./sec, for allowing the evaporation material 111 to reach its evaporating temperature quickly, likely within 5 seconds, as described in step 404 .
- IR infrared
- RF radio frequency
- MW microwave
- step 404 as soon as the evaporation material 111 is heated by the heater 140 to its evaporating temperature, the evaporation material 111 is transformed from its solid state into its gaseous state for starting to fill the enclosed heating area 112 , that is a space formed between the shutter device 160 and the evaporation source plate 110 , with the vaporized evaporation material 111 .
- the transmission device 170 is activated for enabling the shutter plate 161 to open in a flash so as to expose the holes 1621 formed on the diffuser plate 162 for the gaseous evaporation material 111 to flow passing through and reach the surface of the target substrate 120 so as to form a uniform film deposition on the target substrate 120 , as described in step 406 .
- the evaporation chamber 230 having the evaporation source plate 210 that is coated with an evaporation material 211 is provided, while the shutter device 260 is closed by the transmission device 270 , i.e. the holes 2611 , 2621 respectively on the upper panel 261 and the lower panel 262 are not aligned with one another; and then the heater 240 is activated for heating the evaporation material 211 rapidly to its evaporating temperature.
- step 404 as soon as the evaporation material 211 is heated by the heater 240 to its evaporating temperature, the evaporation material 211 is transformed from its solid state into its gaseous state for starting to fill the enclosed heating area 212 , that is a space formed between the shutter device 260 and the evaporation source plate 210 , with the vaporized evaporation material 211 .
- the transmission device 270 is activated for enabling the shutter plate 260 to open by aligning the holes 2611 on the upper panel 261 with the holes 2621 on the lower panel 262 for allowing the gaseous evaporation material 211 to flow passing through the holes 2611 , 2621 and reach the surface of the target substrate 220 so as to form a uniform film deposition on the target substrate 220 , as described in step 406 .
- the rapid heating means that is operated cooperating with an instant-opened shutter device in the evaporation system and method of the present disclosure
- the saturated vapor flow of the evaporation material with high pressure i.e. the pressure difference between the enclosed heating area and the vacuum chamber is over to 1 ⁇ 2 order
- the shutter device that can be opened in a very brief period of time
- holes formed respectively on two porous panels can be enabled to communicate with one another for allowing the saturated vapor flow of the evaporation material passing through and thus to be diffused with uniformly distributed flash evaporation effect.
- a uniform distributed vapor laminar flow can be achieved so as to form a uniform film deposition on the target substrate, and thereby, not only the unevenly film deposition caused by unstable vapor flow in the early stage of a conventional evaporation process is solved, but also the thermal crystal degradation of deposited film that is caused by the requiring of the evaporation chamber to be heated for a long period of time in conventional evaporation processes can be suppressed.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
An evaporation system and an evaporation method are disclosed, which are adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, the evaporation system comprises an evaporation material and an evaporation source plate, whereas the evaporation source plate is arranged to be heated by a heater so as to evaporate the evaporation material form its solid state into its gaseous state, and then enable the gaseous state evaporation material to travel passing through holes by the use of a shutter device so as to spread toward the surface of the evaporation target substrate for forming a film thereon. In addition, the evaporation system further comprises a transmission device, which is to be used for controlling the opening/closing of the holes of the shutter device.
Description
- This application also claims priority to Taiwan Patent Application No. 103137848 filed in the Taiwan Patent Office on Oct. 31, 2014, the entire content of which is incorporated herein by reference.
- The present disclosure relates to an evaporation system and an evaporation method, and more particularly to an evaporation technique for large-area thin film deposition capable of achieving precise film quality control with improved high deposition rate and material utilization ratio.
- In a conventional film deposition technique for OLED devices, it is common to use point evaporation sources. Nevertheless, the adopting of such point evaporation source can only be suitably applied in an evaporation process for forming thin films onto a small-size substrate, such as a piece of 370 mm×470 mm substrate, with a low material utilization rate ranged between 5% to 6%, and a low deposition rate of about 0.3 to 0.8 nm/s in a comparatively longer tact time, i.e. as long as 40 min to 50 min Although there are already linear evaporation sources being adopted and used in some advanced evaporation processes, the shortcoming of low material utilization rate that is commonly seen in the process using point evaporation source still exists, despite that it had been improved from 5% in point evaporation sources to 20%˜50% in linear evaporation sources. In addition, in the early stage of a conventional evaporation process, not matter it is using a point evaporation source or a linear evaporation source, the evaporation source must be shielded and covered by a shutter. Since in the early stage the powder-like or granular-like evaporation material is just started being heated and thus the evaporation process is in a transient period when the consequent vapor flow rate is increasing gradually, the vapor flow that is increasing can cause unstable film deposition rate which will eventually cause film to be formed non-uniformly on the substrate. Therefore, at early stage of an evaporation process, the evaporation source should be shielded and covered until an equilibrium vapor saturation has been reached and thereby the resulting deposition rate is stabled, that is when the shutter can be opened for enabling an evaporation process.
- For an evaporation technique of large-area thin film deposition, no matter it is using a point evaporation source or a linear evaporation source, the cosine law of distribution angle must be considered as the larger the substrate to be deposited is, the larger the distance between the evaporation source and the substrate should be. In addition, the size of the shutter is increased to cope with the larger substrate. For instance, for performing an evaporation process on a substrate that is longer than 1 meter, the distance between the used evaporation source and the substrate must be over 1 meter. Consequently, the film can still be deposited on the substrate non-uniformly as it can take too long for the one-meter-long substrate to travel passing the deposition chamber during the shutter is being activated to open and close in a reciprocation manner.
- The present disclosure provides an evaporation system for performing an evaporation process upon a surface of an evaporation target substrate, which comprises: an evaporation source plate, an evaporation material, a heater, a shutter device, and a transmission device. In addition, the evaporation source plate is configured with at least one planar surface; the evaporation material is coated on the planar surface of the evaporation source plate; the heater is disposed at a position for allowing the same to heat the evaporation source plate and thus transform the solid state evaporation material into its gaseous state; the shutter device is formed with a plurality of holes while being arranged at a position between the evaporation source plate and the evaporation target substrate; and the transmission device is coupled to the shutter device for controlling the opening/closing of the shutter device so as to allow the gaseous evaporation material to travel passing the holes and thereby reaching the surface of the evaporation target substrate for film deposition.
- The present disclosure further provides an evaporation method for performing an evaporation process upon a surface of an evaporation target substrate. Operationally, first an evaporation material and an evaporation source plate are provided, while allowing the evaporation material to be coated on a surface of the evaporation source plate, and then the evaporation source plate is heated by a heater for transforming the evaporation material from its solid state to its gaseous state. Thereafter, a shutter device with a plurality of holes is provided for enabling the gaseous evaporation material to travel passing the holes and thus reaching the surface of the evaporation target substrate for film deposition, whereas the shutter device is coupled to a transmission device which is used for controlling the opening/closing of the holes of the shutter device.
- Further scope of applicability of the present application will become more apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the disclosure, are given by way of illustration only, since various changes and modifications within the spirit and scope of the disclosure will become apparent to those skilled in the art from this detailed description.
- The present disclosure will become more fully understood from the detailed description given herein below and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present disclosure and wherein:
-
FIG. 1 is a schematic diagram showing an evaporation system according to an embodiment of the present disclosure. -
FIG. 2 is a schematic diagram showing an evaporation system according to another embodiment of the present disclosure whereas its shutter device is closed. -
FIG. 3 is a schematic diagram showing the evaporation system ofFIG. 2 where its shutter device is opened. -
FIG. 4 is a flow chart depicting steps performed in an evaporation method of the present disclosure. - In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.
- Please refer to
FIG. 1 , which is a schematic diagram showing an evaporation system according to a first embodiment of the present disclosure. In theevaporation system 100 shown inFIG. 1 , there is anevaporation source plate 110 being used for performing an evaporation process upon antarget substrate 120, whereas theevaporation source plate 110 is substantially a source plate having at least one surface that is covered with anevaporation material 111 in a manner selected from the group consisting of: coating, inkjet printing and evaporation and the like, but is not limited thereby. There can be a variety ofevaporation source plates 110 that are provided forvarious evaporation materials 111 to dispose thereon. For instance, it is noted that the surface of theevaporation source plate 110 provided for theevaporation material 111 to dispose thereon can be a surface selected from a planar surface, a smooth surface, a rough surface, and a pitted surface and correspondingly, theevaporation material 111 can be formed as a film with a planar surface, a smooth surface, a rough surface, or a pitted surface, or can be disposed on the surface of thesource plate 110 into an array pattern composed of points, lines or planes of theevaporation material 111 by a means selected from the group consisting of: coating, inkjet printing and evaporation. Theevaporation source plate 110 is made of a material with a specific heat resistance. That is, since theevaporation source plate 110 is provided for an evaporation process, the melting point of the evaporation source plate should at least be higher than the working temperature of theevaporation material 111 in the evaporation process. Moreover, theevaporation material 111 can be a pure substance or a composition of various substances, such as an evaporation material for forming copper indium gallium selenide (CIGS) films or an organic light-emitting layer for emitting red, green or blue light. Moreover, theevaporation material 111 is coated on a surface of theevaporation source plate 110 for forming a layer of evaporation material thereon, and for allowing theevaporation material 111 after being evaporated into a gaseous state to be distributed onto thetarget substrate 120 for film deposition. - As the
evaporation system 100 shown inFIG. 1 , an evaporation process is performed inside avacuum evaporation chamber 130, while anevaporation source plate 110 which can be a two-dimensional planar structured crucible for housing anevaporation material 111 is placed at the lower portion of thevacuum chamber 130. It is noted that the surface of theevaporation source plate 110 provided for theevaporation material 111 to dispose thereon can be a smooth surface, a rough surface, a surface with grooved, or a surface with array of blind holes and blind slots. In addition, there is aheater 140 being disposed at a position under theevaporation source plate 110 for allowing the same to heat theevaporation material 111 disposed on theevaporation source plate 110, and thus transforming the solid-state evaporation material 111 into its gaseous state. Moreover, there can be acooling device 150 being attached to the back of thetarget substrate 120 for cooling the same. - There is a
shutter device 160 being disposed at a position between theevaporation source plate 110 and theevaporation target substrate 120, and thereby, there is an enclosedheating area 112 being formed by theshutter device 160 and theevaporation source plate 110. In this embodiment, theshutter device 160 further comprises ashutter plate 161 and adiffuser plate 162 in a manner thatshutter plate 161 is coupled to atransmission device 170. In addition, theshutter plate 161 is disposed close to a side of thetarget substrate 120 while thediffuser plate 162 is disposed on top of theevaporation source plate 110. Before heating, theshutter device 160 is closed that theshutter plate 161 is arranged at a position for allowing thediffuser plate 162 to be shielded thereby, and thus enabling a confined enclosed space, i.e. the enclosedheating area 112, to be formed between theevaporation source plate 110 and theshutter device 160. Theheater 140 is then being activated for heating theevaporation source plate 110, whereas theheater 140 can be an infrared (IR) heater, a radio frequency (RF) heater, a microwave (MW) heater or a high-power heater. In an embodiment, for example, theheater 140 is being activated to perform a heating procedure at a rapid rate, likely 100° C./sec, for allowing theevaporation material 111 to reach its evaporating temperature quickly, likely within 5 seconds. As soon as theevaporation material 111 is heated by theheater 140 to its evaporating temperature, theevaporation material 111 is transformed from its solid state into its gaseous state for starting to fill the enclosedheating area 112 with the vaporizedevaporation material 111. At a time when the pressure difference between the enclosedheating area 112 and thevacuum chamber 130 is over to 1˜2 order, thetransmission device 170 is activated for enabling theshutter plate 161 to open in a flash so as to expose theholes 1621 formed on thediffuser plate 162 for thegaseous evaporation material 111 to flow passing through and reach the surface of thetarget substrate 120. By the flash evaporation effect happened when the high-pressure vapor flow of thegaseous evaporation material 111 flows into thevacuum chamber 130 of lower pressure and also by the sizes, shapes and distribution of theholes 1621 on thediffuser plate 162 well designed, an uniform distributed vapor laminar flow can be achieved so as to form a uniform film deposition on thetarget substrate 120. - The
transmission device 170 can be a manual transmission device, a ball screw transmission device, or a cam driving device. Nevertheless, different transmission devices will correspondingly have different configurations of power sources and driving mechanisms. In the embodiment shown inFIG. 1 , amotor 170 is disposed outside theevaporation chamber 130 while allowing the driving force of themotor 171 to be fed to aball nut 173 by a gear set or apulley set 172. As theball nut 173 is further coupled to aball screw rod 174 while theball nut 173 itself is fixed inside theevaporation chamber 130, therotating ball nut 173 will bring along theball screw rod 174 to move left or right, and thus enabling anupper panel 161 that is fixedly attached to theball screw rod 174 to be moved by a displacement C. - In an
evaporation system 200 shown inFIG. 2 , there is anevaporation source plate 210 that is provided for anevaporation material 211 to be disposed thereon is placed inside avacuumed evaporation chamber 230, whereas theevaporation source plate 210 is disposed on top of aheater 240 while allowing theevaporation source plate 210 to be confined by ashutter device 260 that is arranged above theevaporation source plate 210. Moreover, there is acooling device 250 being disposed at the back of thetarget substrate 220 for cooling the same. In this embodiment, theshutter device 260 is a composition of anupper panel 261 and alower panel 262, while both of the twopanels upper panel 261 is disposed close to a side of thetarget substrate 220 while thelower panel 262 is disposed on top of theevaporation source plate 210. As shown inFIG. 2 , theshutter device 260 is closed before heating, while theholes 2611 on theupper panel 261 are not aligned withholes 2621 on thelower panel 262, so that an enclosedspace 212 is formed on top of theevaporation source plate 210. In addition, there is at least one panel that is selected from theupper panel 261 and thelower panel 262 is arranged coupling to atransmission device 270. - At the starting of the heated
evaporation material 211 on theevaporation source plate 210 being evaporated, theupper panel 261 and thelower panel 262 remain at their respective initial positions without movement, i.e. the holes of theupper panel 261 and thelower panel 262 are not aligned with one another and thus are not in communication with one another, so that the space above theevaporation source plate 210 is an enclosed space, i.e. the enclosedheating area 212. As theevaporation source plate 210 is being heated by theheater 240, theevaporation material 211 is gradually being heated to its evaporating temperature and thus starts filling the confined enclosedheating area 212 withgaseous evaporation material 211. At the point when the pressure difference between theenclosed heating area 212 and thevacuum chamber 230 is over to 1˜2 order, thetransmission device 270 is activated for enabling the either theupper panel 261 or thelower panel 262 to move in a flash in a manner that the holes of theupper panel 261 and thelower panel 262 are aligned with one another and thus are in communication with one another, and thus thegaseous evaporation material 211 can be allowed to flow into theevaporation chamber 230 where the pressure is lower for enabling a flash evaporation effect, as shown inFIG. 3 . In addition, by the sizes, shapes and distribution of theholes upper panel 261 andlower panel 262 well designed, a uniform distributed vapor laminar flow can be achieved so as to form a uniform film deposition on thetarget substrate 220. - In the embodiment shown in
FIG. 3 , thetransmission device 270 is composed of: amotor 271, a gear/pulley set 272, aball nut 273, and aball screw rod 274. As theupper panel 261 inFIG. 3 is fixedly coupled to theball screw rod 274, theupper panel 261 can be brought along to move by a displacement C by the movingball screw rod 274. The configuration of thetransmission device 270 is about the same as thetransmission device 170 shown inFIG. 1 , but is different in that: theball screw rod 274 is arranged extending from one side of theupper panel 261 to an opposite side thereof. - Please refer to
FIG. 4 , which is a flow chart depicting steps performed in an evaporation method of the present disclosure. Theevaporation method 400 ofFIG. 4 comprises the steps of: -
- Step 402: providing an evaporation material and an evaporation source plate while allowing the evaporation material to be coated on a surface of the evaporation source plate;
- Step 404: heating the evaporation source plate by the use of a heater for transforming the evaporation material from its solid state to its gaseous state; and
- Step 406: providing a shutter device with a plurality of holes for enabling the gaseous evaporation material to travel passing the holes and thus reach the surface of the target substrate for film deposition, wherein the shutter device is coupled to a transmission device which is used for controlling the opening/closing of the holes.
- The following description relating to the evaporation method of
FIG. 4 is exemplified by the use of theevaporation system 100 ofFIG. 1 . In thestep 402, first, theevaporation chamber 130 having theevaporation source plate 110 that is coated with theevaporation material 111 is provided, while theshutter device 160 is closed by thetransmission device 170, i.e. theholes 1621 on thediffuser plate 162 is shielded by theshutter plate 161; and then theheater 140 is activated for heating theevaporation material 111 rapidly to its evaporating temperature. In this embodiment, theheater 140, which can be an infrared (IR) heater, a radio frequency (RF) heater, a microwave (MW) heater or a high-power heater, is being activated to perform a heating procedure at a rapid rate, likely 100° C./sec, for allowing theevaporation material 111 to reach its evaporating temperature quickly, likely within 5 seconds, as described instep 404. Instep 404, as soon as theevaporation material 111 is heated by theheater 140 to its evaporating temperature, theevaporation material 111 is transformed from its solid state into its gaseous state for starting to fill theenclosed heating area 112, that is a space formed between theshutter device 160 and theevaporation source plate 110, with the vaporizedevaporation material 111. At a time when the pressure difference between theenclosed heating area 112 and thevacuum chamber 130 is over to 1˜2 order, thetransmission device 170 is activated for enabling theshutter plate 161 to open in a flash so as to expose theholes 1621 formed on thediffuser plate 162 for thegaseous evaporation material 111 to flow passing through and reach the surface of thetarget substrate 120 so as to form a uniform film deposition on thetarget substrate 120, as described instep 406. - The following description relating to the evaporation method of
FIG. 4 is exemplified by the use of theevaporation system 200 ofFIG. 2 . In thestep 402, first, theevaporation chamber 230 having theevaporation source plate 210 that is coated with anevaporation material 211 is provided, while theshutter device 260 is closed by thetransmission device 270, i.e. theholes upper panel 261 and thelower panel 262 are not aligned with one another; and then theheater 240 is activated for heating theevaporation material 211 rapidly to its evaporating temperature. Instep 404, as soon as theevaporation material 211 is heated by theheater 240 to its evaporating temperature, theevaporation material 211 is transformed from its solid state into its gaseous state for starting to fill theenclosed heating area 212, that is a space formed between theshutter device 260 and theevaporation source plate 210, with the vaporizedevaporation material 211. At a time when the pressure difference between theenclosed heating area 212 and thevacuum chamber 230 is over to 1˜2 order, thetransmission device 270 is activated for enabling theshutter plate 260 to open by aligning theholes 2611 on theupper panel 261 with theholes 2621 on thelower panel 262 for allowing thegaseous evaporation material 211 to flow passing through theholes target substrate 220 so as to form a uniform film deposition on thetarget substrate 220, as described instep 406. - To sum up, by the rapid heating means that is operated cooperating with an instant-opened shutter device in the evaporation system and method of the present disclosure, the saturated vapor flow of the evaporation material with high pressure, i.e. the pressure difference between the enclosed heating area and the vacuum chamber is over to 1˜2 order, can be enabled to flow passing a shutter device in a flash, and thereby, a uniform distributed flash evaporation effect can be achieved. In another embodiment of the present disclosure, by the use of the shutter device that can be opened in a very brief period of time, holes formed respectively on two porous panels can be enabled to communicate with one another for allowing the saturated vapor flow of the evaporation material passing through and thus to be diffused with uniformly distributed flash evaporation effect. Moreover, by the sizes, shapes and distribution of the holes on the shutter device well designed, a uniform distributed vapor laminar flow can be achieved so as to form a uniform film deposition on the target substrate, and thereby, not only the unevenly film deposition caused by unstable vapor flow in the early stage of a conventional evaporation process is solved, but also the thermal crystal degradation of deposited film that is caused by the requiring of the evaporation chamber to be heated for a long period of time in conventional evaporation processes can be suppressed.
- With respect to the above description then, it is to be realized that the optimum dimensional relationships for the parts of the disclosure, to include variations in size, materials, shape, form, function and manner of operation, assembly and use, are deemed readily apparent and obvious to one skilled in the art, and all equivalent relationships to those illustrated in the drawings and described in the specification are intended to be encompassed by the present disclosure.
Claims (9)
1. An evaporation system for performing an evaporation process upon a surface of a target substrate, comprising:
an evaporation source plate, configured with at least one planar surface;
an evaporation material, coated on the at least one planar surface of the evaporation source plate;
a heater, disposed at a position for allowing the same to heat the evaporation source plate and thus transform the solid state evaporation material into its gaseous state;
a shutter device with a plurality of holes, arranged at a position between the evaporation source plate and the target substrate; and
a transmission device, coupled to the shutter device for controlling the opening/closing of the shutter device so as to allow the gaseous evaporation material to travel passing the holes and thereby reaching the surface of the target substrate for film deposition.
2. The evaporation system of claim 1 , wherein the heater is a device selected from a group consisting of: an infrared (IR) heater, a radio frequency (RF) heater, a microwave (MW) heater and a high-power heater.
3. The evaporation system of claim 1 , wherein the shutter device further comprises: a shutter plate and a diffuser plate in a manner that shutter plate is coupled to the transmission device.
4. The evaporation system of claim 1 , wherein the shutter device is a combination of an upper panel and a lower panel, and the plural holes are formed respectively on the upper panel and the lower panel while allowing the transmission device to couple to one panel selected between the upper panel and the lower panel in a manner that the upper panel and the lower panel can be driven to move and displaced by a relative displacement related to each other for enabling the holes of the upper panel to align or misalign with the holes of the lower panel.
5. An evaporation method for performing an evaporation process upon a surface of a target substrate, comprising the steps of:
providing an evaporation material and an evaporation source plate while allowing the evaporation material to be coated on a surface of the evaporation source plate;
heating the evaporation source plate by the use of a heater for transforming the evaporation material from its solid state to its gaseous state; and
providing a shutter device with a plurality of holes for enabling the gaseous evaporation material to travel passing the holes and thus reach the surface of the target substrate for film deposition;
wherein, the shutter device is coupled to a transmission device which is used for controlling the opening/closing of the holes.
6. The evaporation method of claim 5 , wherein the evaporation material and the evaporation source plate are disposed inside a vacuum chamber while allowing an enclosed heating area being formed between the shutter device and the evaporation source plate; and thereby, when the evaporation material is being heated and transformed from its solid state into its gaseous state to a point that the pressure difference between the enclosed heating area and the vacuum chamber is ranged between 1˜2 order, the transmission device is activated for enabling the shutter device to open.
7. The evaporation method of claim 5 , wherein the heater is a device selected from a group consisting of: an infrared (IR) heater, a radio frequency (RF) heater, a microwave (MW) heater and a high-power heater.
8. The evaporation method of claim 5 , wherein the shutter device further comprises: a shutter plate, arranged coupling to the transmission device; and a diffuser plate, formed with a plurality of holes; and thereby, the shutter can be driven to move by the transmission device for allowing the plural holes on the diffuser plate to expose and thus enabling the gaseous evaporation material to flow passing through the plural holes to reach a surface of the target substrate for film deposition.
9. The evaporation method of claim 5 , wherein the shutter device is a combination of an upper panel and a lower panel, and the plural holes are formed respectively on the upper panel and the lower panel while allowing the transmission device to couple to one panel selected between the upper panel and the lower panel in a manner that the upper panel and the lower panel can be driven to move and displaced by a relative displacement related to each other for enabling the holes of the upper panel to align or misalign with the holes of the lower panel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/432,426 US9957607B2 (en) | 2014-10-31 | 2017-02-14 | Evaporation method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103137848 | 2014-10-31 | ||
TW103137848A TWI582251B (en) | 2014-10-31 | 2014-10-31 | Evaporation system and evaporation method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/432,426 Division US9957607B2 (en) | 2014-10-31 | 2017-02-14 | Evaporation method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20160122866A1 true US20160122866A1 (en) | 2016-05-05 |
Family
ID=55852019
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/851,472 Abandoned US20160122866A1 (en) | 2014-10-31 | 2015-09-11 | Evaporation system and evaporation method |
US15/432,426 Active US9957607B2 (en) | 2014-10-31 | 2017-02-14 | Evaporation method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/432,426 Active US9957607B2 (en) | 2014-10-31 | 2017-02-14 | Evaporation method |
Country Status (2)
Country | Link |
---|---|
US (2) | US20160122866A1 (en) |
TW (1) | TWI582251B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112210758A (en) * | 2020-09-23 | 2021-01-12 | 铜陵市超越电子有限公司 | Dislocation combined material furnace for metallized film evaporation |
US11111579B2 (en) * | 2018-05-10 | 2021-09-07 | Samsung Electronics Co., Ltd. | Deposition equipment and method of fabricating semiconductor device using the same |
US11251372B2 (en) | 2018-01-09 | 2022-02-15 | Hon Hai Precision Industry Co., Ltd. | Vapor deposition source and method for making organic light-emitting diode display panel |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10815563B2 (en) | 2017-10-05 | 2020-10-27 | Emagin Corporation | Linear source apparatus, system and method of use |
USD846725S1 (en) | 2017-10-23 | 2019-04-23 | S. C. Johnson & Son, Inc. | Dispenser |
USD846724S1 (en) | 2017-10-23 | 2019-04-23 | S. C. Johnson & Son, Inc. | Dispenser |
USD859163S1 (en) | 2017-10-23 | 2019-09-10 | S. C. Johnson & Son, Inc. | Container with cover |
USD871226S1 (en) | 2017-10-23 | 2019-12-31 | S. C. Johnson & Son, Inc. | Container |
CN108950528A (en) * | 2018-07-25 | 2018-12-07 | 蔡敬东 | A kind of board production copper precipitation unit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4224897A (en) * | 1974-01-24 | 1980-09-30 | United Kingdom Atomic Energy Authority | Methods of depositing materials on substrates |
US20110195186A1 (en) * | 2010-02-09 | 2011-08-11 | Industrial Technology Research Institute | Plane-type film continuous evaporation source and the manufacturing method and system using the same |
US20120164776A1 (en) * | 2010-12-23 | 2012-06-28 | Primestar Solar, Inc. | Non-Wear Shutter Apparatus for a Vapor Deposition Apparatus |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251273A (en) * | 1984-05-28 | 1985-12-11 | Mitsubishi Heavy Ind Ltd | Method for controlling extent of evaporation in vacuum depositing apparatus |
US5328583A (en) * | 1991-11-05 | 1994-07-12 | Canon Kabushiki Kaisha | Sputtering apparatus and process for forming lamination film employing the apparatus |
EP1174526A1 (en) * | 2000-07-17 | 2002-01-23 | Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO | Continuous vapour deposition |
US7326303B2 (en) | 2002-06-03 | 2008-02-05 | Optoelectronics Systems Consulting Inc. | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
JP4475967B2 (en) | 2004-01-29 | 2010-06-09 | 三菱重工業株式会社 | Vacuum evaporation machine |
JP4475968B2 (en) | 2004-01-29 | 2010-06-09 | 三菱重工業株式会社 | Vacuum evaporation machine |
EP1788112B1 (en) * | 2005-10-26 | 2011-08-17 | Applied Materials GmbH & Co. KG | Vapour deposition apparatus |
TWI306903B (en) | 2005-11-25 | 2009-03-01 | Innolux Display Corp | Apparatus and method of vacuum deposition |
JP4768584B2 (en) | 2006-11-16 | 2011-09-07 | 財団法人山形県産業技術振興機構 | Evaporation source and vacuum deposition apparatus using the same |
WO2008069259A1 (en) | 2006-12-05 | 2008-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device |
US8119204B2 (en) | 2007-04-27 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and method for manufacturing light-emitting device |
US8465589B1 (en) | 2009-02-05 | 2013-06-18 | Ascent Solar Technologies, Inc. | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors |
JP2009266962A (en) * | 2008-04-23 | 2009-11-12 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and method for manufacturing semiconductor device |
CN102482763B (en) * | 2010-06-16 | 2015-04-08 | 松下电器产业株式会社 | Method for manufacturing thin film |
KR101100284B1 (en) | 2010-06-21 | 2011-12-30 | 세메스 주식회사 | Thin film deposition apparatus |
TWM466924U (en) | 2010-07-20 | 2013-12-01 | Hitachi Shipbuilding Eng Co | Evaporation device |
TWI425107B (en) | 2010-11-15 | 2014-02-01 | Ind Tech Res Inst | Continuous-type sputtering apparatus and method of fabricating solar selective absorber |
US20120027921A1 (en) * | 2010-12-22 | 2012-02-02 | Primestar Solar, Inc. | Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate |
CN103649364A (en) | 2011-07-07 | 2014-03-19 | 松下电器产业株式会社 | Vacuum deposition device |
JP5840055B2 (en) | 2012-03-29 | 2016-01-06 | 日立造船株式会社 | Vapor deposition equipment |
TWM455016U (en) | 2013-02-05 | 2013-06-11 | Adpv Technology Ltd | Gas release device for film coating process |
-
2014
- 2014-10-31 TW TW103137848A patent/TWI582251B/en active
-
2015
- 2015-09-11 US US14/851,472 patent/US20160122866A1/en not_active Abandoned
-
2017
- 2017-02-14 US US15/432,426 patent/US9957607B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4224897A (en) * | 1974-01-24 | 1980-09-30 | United Kingdom Atomic Energy Authority | Methods of depositing materials on substrates |
US20110195186A1 (en) * | 2010-02-09 | 2011-08-11 | Industrial Technology Research Institute | Plane-type film continuous evaporation source and the manufacturing method and system using the same |
US20120164776A1 (en) * | 2010-12-23 | 2012-06-28 | Primestar Solar, Inc. | Non-Wear Shutter Apparatus for a Vapor Deposition Apparatus |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11251372B2 (en) | 2018-01-09 | 2022-02-15 | Hon Hai Precision Industry Co., Ltd. | Vapor deposition source and method for making organic light-emitting diode display panel |
US11800779B2 (en) | 2018-01-09 | 2023-10-24 | Hon Hai Precision Industry Co., Ltd. | Vapor deposition source and method for making organic light-emitting diode display panel |
US11111579B2 (en) * | 2018-05-10 | 2021-09-07 | Samsung Electronics Co., Ltd. | Deposition equipment and method of fabricating semiconductor device using the same |
CN112210758A (en) * | 2020-09-23 | 2021-01-12 | 铜陵市超越电子有限公司 | Dislocation combined material furnace for metallized film evaporation |
Also Published As
Publication number | Publication date |
---|---|
TWI582251B (en) | 2017-05-11 |
US20170159171A1 (en) | 2017-06-08 |
TW201615868A (en) | 2016-05-01 |
US9957607B2 (en) | 2018-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9957607B2 (en) | Evaporation method | |
CN103305803B (en) | Temperature control system-based evaporation temperature control method for OLED (Organic Light Emitting Diode) organic layer | |
TW200814392A (en) | Deposition apparatus | |
JP2009097044A (en) | Film deposition apparatus and film deposition method | |
WO2007005813A3 (en) | Inorganic semiconductive films and methods therefor | |
JP2017509796A5 (en) | ||
KR101128747B1 (en) | Process for producing thin organic film | |
US9750091B2 (en) | Apparatus and method for heat treatment of coatings on substrates | |
US8709837B2 (en) | Deposition apparatus and method for manufacturing organic light emitting diode display using the same | |
KR102049006B1 (en) | Organic light emitting diode display and manufacturing method thereof | |
WO2012021321A3 (en) | Composite substrates for direct heating and increased temperature uniformity | |
CN103993269A (en) | Coating device and coating method | |
CN104328377A (en) | Evaporation source, film-forming facility and film-forming method thereof | |
JP2008115416A (en) | Vacuum vapor-deposition source and vacuum vapor-deposition apparatus | |
US20170067144A1 (en) | Vacuum evaporation source apparatus and vacuum evaporation equipment | |
CN207257129U (en) | Condensation structure and decompression dry device | |
US20110195186A1 (en) | Plane-type film continuous evaporation source and the manufacturing method and system using the same | |
US10190207B2 (en) | Evaporation method | |
CN106920898A (en) | Mask plate and its manufacture method, OLED evaporation coating method | |
JP2014070239A (en) | Vapor deposition device | |
CN106086783A (en) | A kind of radical occlusion device and occlusion method thereof and deposition system | |
KR20150097397A (en) | Method for forming transparent conductive film, and device for heating and drying thin-film | |
WO2015100780A1 (en) | Vacuum vapour deposition device and vapour deposition method | |
US20130068160A1 (en) | Evaporation device and evaporation apparatus | |
KR101656140B1 (en) | Heat treatment apparatus for organic electronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TUNG, FU-CHING;WANG, CHING-CHIUN;LAI, SHIH-HSIANG;REEL/FRAME:036588/0677 Effective date: 20150901 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |