CN106086783A - A kind of radical occlusion device and occlusion method thereof and deposition system - Google Patents
A kind of radical occlusion device and occlusion method thereof and deposition system Download PDFInfo
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- CN106086783A CN106086783A CN201610509680.9A CN201610509680A CN106086783A CN 106086783 A CN106086783 A CN 106086783A CN 201610509680 A CN201610509680 A CN 201610509680A CN 106086783 A CN106086783 A CN 106086783A
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- vapor deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of radical occlusion device and occlusion method thereof and deposition system.This radical occlusion device includes actuating unit and guard mechanism, actuating unit is used for driving guard mechanism to convert diverse location, guard mechanism is for blocking vapor deposition source and the evaporation passage treated between plated substrate, and keeps the evaporation passage between vapor deposition source and evaporation rate induction apparatus to open；It is additionally operable to the evaporation passage opened vapor deposition source and treat between plated substrate, and keeps the evaporation passage between vapor deposition source and evaporation rate induction apparatus to open.This radical occlusion device achieves the seriality of evaporation and controls, and not only shortens the evaporation time, and has saved deposition material, thus not only increase production capacity, and saved cost, also improves stability and the yield of evaporation simultaneously.
Description
Technical field
The present invention relates to Display Technique field, in particular it relates to a kind of radical occlusion device and occlusion method thereof and deposition system.
Background technology
In Display Technique field, OLED evaporation process needs to carry out the speed control of deposition material during being deposited with
System.At present, being usually provided with multiple vapor deposition source in the evaporation chamber of OLED, the deposition material in each vapor deposition source is used for being deposited with
Form a functional layer (such as luminescent layer, electron transfer layer or hole transmission layer) of OLED.The surface of each vapor deposition source
All being respectively arranged with one piece of baffle plate, baffle plate is parallel with the evaporation face of vapor deposition source, and the size of baffle plate just can block right with it
The evaporation face of the vapor deposition source answered.
Each vapor deposition source is when evaporation starts, and baffle plate could start after taking away to be controlled the speed of deposition material,
It is deposited with on plated substrate to treating simultaneously.After one vapor deposition source has been deposited with, next vapor deposition source repeats same process and carries out separately
The rate controlled of a kind of deposition material and evaporation.This evaporation coating method is not only deposited with overlong time, and often at deposition material
Speed when the most not stablizing, part deposition material has been deposited with to be treated on plated substrate, makes the evaporation thickness treating on plated substrate
Control accurate not, both wasted deposition material, and affected again the quality of this steaming film plating layer on substrate.
Current evaporation process not only makes OLED display device yield low, and drastically increases OLED display device
Cost, makes OLED display device be constantly in the condition being difficult to replace LCD display part.Produce line especially for G2.5 to create
The problems such as such as production capacity is low, material cost is high, the time is high with cost, repeated poor stability, and these problems become obstruction
The bottleneck problem of OLED development.
Summary of the invention
The present invention is directed to above-mentioned technical problem present in prior art, it is provided that a kind of radical occlusion device and occlusion method thereof and
Deposition system.This radical occlusion device achieves the seriality of evaporation and controls, and not only shortens the evaporation time, and has saved evaporation material
Material, thus not only increase production capacity, and saved cost, also improve stability and the yield of evaporation simultaneously.
The present invention provides a kind of radical occlusion device, and including actuating unit and guard mechanism, described actuating unit is used for driving institute
Stating guard mechanism conversion diverse location, described guard mechanism is used for blocking vapor deposition source and the evaporation passage treated between plated substrate, and
The evaporation passage between described vapor deposition source and evaporation rate induction apparatus is kept to open；It is additionally operable to open described vapor deposition source treat with described
Evaporation passage between plated substrate, and keep the evaporation passage between described vapor deposition source and described evaporation rate induction apparatus to open.
Preferably, described evaporation rate induction apparatus and the described top treating that plated substrate is respectively positioned on described vapor deposition source, and described
Evaporation rate induction apparatus and described treat plated substrate described vapor deposition source orthographic projection in the plane lay respectively at described vapor deposition source
Opposite sides；
Described actuating unit is for being arranged on the side corresponding with described substrate position to be plated of described vapor deposition source, described
Actuating unit includes that power source, the first drivening piece and the second drivening piece, described power source are flexibly connected with described first drivening piece,
Described first drivening piece is flexibly connected with described second drivening piece, and described power source can drive described first drivening piece to rotate, with
Described first drivening piece is made to drive described second drivening piece to rotate；
Described guard mechanism connects described second drivening piece, and described guard mechanism can be under the drive of described second drivening piece
Rotate clockwise and anticlockwise in the range of the axis angle with described vapor deposition source is 0-90 °.
Preferably, the rectangular tabular of described guard mechanism, the long edge of described guard mechanism is away from described actuating unit
Direction extends, and the width of described guard mechanism is more than or equal to the diameter of described vapor deposition source；Described guard mechanism can its plate face with
The axis angle of described vapor deposition source rotates in the range of being 0-90 ° clockwise and anticlockwise.
Preferably, cylindrically, one end nozzle of described cylinder is for the evaporation with described vapor deposition source for described guard mechanism
Face is relative, and the barrel dliameter of described cylinder extends along the direction away from described actuating unit, and the diameter of described cylinder is more than or equal to described
The diameter of vapor deposition source；Described guard mechanism can in the range of the axis angle of its barrel dliameter Yu described vapor deposition source is 0-90 ° up time
Pin and rotating counterclockwise.
Preferably, described guard mechanism uses metal material.
Preferably, the block surface towards described vapor deposition source that is used for of described guard mechanism is set to latticed.
Preferably, described power source includes that pneumatic source or electronic source, described first drivening piece include worm screw, described second band
Moving part includes turbine；Described worm screw is mutually movable with described turbine to be engaged, and described power source can drive described worm screw to rotate, described
Worm screw can drive described turbine rotation.
Preferably, also include that control module, described control module are connected with described actuating unit, be used for controlling described power
Mechanism action, to drive described guard mechanism to block described vapor deposition source and the described evaporation passage treated between plated substrate；And band
Dynamic described guard mechanism is shifted one's position, so that described vapor deposition source and the described evaporation passage treated between plated substrate are opened.
The present invention also provides for a kind of deposition system, including above-mentioned radical occlusion device.
Preferably, also including vapor deposition source, evaporation rate induction apparatus and evaporation film thickness controller, described vapor deposition source is for treating
Film plating layer is steamed on plated substrate；Described evaporation rate induction apparatus is for gathering the evaporation rate of described vapor deposition source, and the institute that will gather
State evaporation rate and be sent to described evaporation film thickness controller；Described evaporation film thickness controller is for controlling according to described evaporation rate
Evaporation is to the described thicknesses of layers treated on plated substrate；
The control module of described radical occlusion device connects described evaporation film thickness controller, and described evaporation film thickness controller is additionally operable to
Control described control module and send control instruction to actuating unit.
The present invention also provides for the occlusion method of a kind of such as above-mentioned radical occlusion device, including:
Controlling the stage at evaporation rate, actuating unit drives guard mechanism to block vapor deposition source and the evaporation treating between plated substrate
Passage, and keep the evaporation passage between described vapor deposition source and evaporation rate induction apparatus to open；
Evaporation the stage, described actuating unit drive described guard mechanism open described vapor deposition source with described treat plated substrate it
Between evaporation passage, and continue to keep the evaporation passage between described vapor deposition source and described evaporation rate induction apparatus to open.
Beneficial effects of the present invention: radical occlusion device provided by the present invention, by arranging guard mechanism, can be in evaporation speed
The rate control stage blocks vapor deposition source and the evaporation passage treated between plated substrate, and keeps between vapor deposition source and evaporation rate induction apparatus
Evaporation passage open；Vapor deposition source and the evaporation passage treated between plated substrate can be opened in the evaporation stage again, and continue to keep steaming
Evaporation passage between plating source and evaporation rate induction apparatus is opened, it is achieved that can carry out deposition material in advance before evaporation
Rate controlled, when evaporation starts, the speed of deposition material has reached stable, it is achieved thereby that the seriality of evaporation controls, no
Only shorten the evaporation time, and saved deposition material, and then not only increase production capacity, and saved cost, also simultaneously
Improve stability and the yield of evaporation.
Deposition system provided by the present invention, by using above-mentioned radical occlusion device, it is achieved that the seriality of this deposition system
Evaporation controls, and makes this deposition system not only shorten the evaporation time, and has saved deposition material, thus not only increases product
Can, and saved cost, also improve stability and the yield of evaporation simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of radical occlusion device in the embodiment of the present invention 1；
Fig. 2 is the structure top view of the block surface of guard mechanism in Fig. 1；
Fig. 3 is guard mechanism in Fig. 1 arranges position view what evaporation rate controlled the stage；
Fig. 4 is that guard mechanism in Fig. 1 arranges position view in the evaporation stage；
Fig. 5 is the structural representation of radical occlusion device in the embodiment of the present invention 2.
Description of reference numerals therein:
1. actuating unit；11. first drivening pieces；12. second drivening pieces；2. guard mechanism；L. the long limit of guard mechanism；W.
The width of guard mechanism；3. vapor deposition source；The axis of 31. vapor deposition source；4. treat plated substrate；5. evaporation rate induction apparatus.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, below in conjunction with the accompanying drawings and be embodied as
A kind of radical occlusion device provided by the present invention and occlusion method thereof and deposition system are described in further detail by mode.
Embodiment 1:
The present embodiment provides a kind of radical occlusion device, as it is shown in figure 1, include actuating unit 1 and guard mechanism 2, actuating unit 1
For driving guard mechanism 2 to convert diverse location, guard mechanism 2 leads to for blocking vapor deposition source 3 and the evaporation treated between plated substrate 4
Road, and keep the evaporation passage between vapor deposition source 3 and evaporation rate induction apparatus 5 to open；It is additionally operable to open vapor deposition source 3 and base to be plated
Evaporation passage between plate 4, and keep the evaporation passage between vapor deposition source 3 and evaporation rate induction apparatus 5 to open.
This radical occlusion device is by arranging guard mechanism 2, it is achieved that can evaporation rate control the stage block vapor deposition source 3 with
Treat the evaporation passage between plated substrate 4, and keep the evaporation passage between vapor deposition source 3 and evaporation rate induction apparatus 5 to open；Again can
Open vapor deposition source 3 and the evaporation passage treated between plated substrate 4 in the evaporation stage, and continue to keep vapor deposition source 3 and evaporation rate sense
Answer the evaporation passage between device 5 to open, it is achieved thereby that the rate controlled of deposition material can be carried out before evaporation in advance, steam
When plating starts, the speed of deposition material has reached stable, and then the seriality achieving evaporation controls, and not only shortens evaporation
Time, and saved deposition material, not only increase production capacity simultaneously, and saved cost, also improve stablizing of evaporation
Property and yield.
In the present embodiment, evaporation rate induction apparatus 5 and treat that plated substrate 4 is respectively positioned on the top of vapor deposition source 3, and evaporation rate sense
Answer device 5 and treat plated substrate 4 vapor deposition source 3 orthographic projection in the plane lay respectively at the opposite sides of vapor deposition source 3.Actuating unit
1 for being arranged on the side corresponding with treating plated substrate 4 position of vapor deposition source 3, and actuating unit 1 includes that power source (does not shows in figure
Go out), the first drivening piece 11 and the second drivening piece 12, power source and the first drivening piece 11 be flexibly connected, the first drivening piece 11 and
Two drivening pieces 12 are flexibly connected, and power source can drive the first drivening piece 11 to rotate, so that the first drivening piece 11 drives the second drive
Part 12 rotates.Guard mechanism 2 connects the second drivening piece 12, guard mechanism 2 can under the drive of the second drivening piece 12 with evaporation
Axis 31 angle in source 3 rotates in the range of being 0-90 ° clockwise and anticlockwise.
Wherein, power source includes pneumatic source (such as cylinder) or electronic source (such as motor), and the first drivening piece 11 includes worm screw, the
Two drivening pieces 12 include turbine；Worm screw is mutually movable with turbine to be engaged, and power source can drive worm screw to rotate, and worm screw can drive turbine
Rotate.Certainly, the structure of the first drivening piece 11 and the second drivening piece 12 is not limited only to the structure of above-mentioned turbine and worm screw.
First drivening piece 11 and the setting of the second drivening piece 12, makes guard mechanism 2 rotate more flexible, it is thus possible to more neatly
Realize guard mechanism 2 evaporation passage is blocked and opened, the most also substantially reduce the energy consumed when guard mechanism 2 rotates
Amount.
Said structure based on radical occlusion device, guard mechanism 2 rotates counterclockwise, it is possible to realize controlling the stage at evaporation rate
Vapor deposition source 3 and the evaporation passage treated between plated substrate 4 are blocked, so that it is guaranteed that the deposition material speed in vapor deposition source 3 does not has
Have before reaching to stablize, will not be deposited with and treat on plated substrate 4；Guard mechanism 2 rotates clockwise, it is possible to realize opening in the evaporation stage
Open vapor deposition source 3 and the evaporation passage treated between plated substrate 4, and keep the evaporation between vapor deposition source 3 and evaporation rate induction apparatus 5 to lead to
Road is opened, and ensures that the coating quality treated on plated substrate 4.
Wherein, the rectangular tabular of guard mechanism 2, the long limit L of guard mechanism 2 extends along the direction away from actuating unit 1, hides
The width W of retaining device 2 is more than or equal to the diameter of vapor deposition source 3；Guard mechanism 2 can be at axis 31 angle in its plate face Yu vapor deposition source 3
Rotate clockwise and anticlockwise in the range of 0-90 °.Vapor deposition source 3 is that deposition material is arranged on the evaporation chamber of cylindrical shape
In, during evaporation, the deposition material in chamber is carried out heat temperature raising, make deposition material upwards evaporate.Evaporation speed before evaporation
Rate controls the stage, and guard mechanism 2 rotates counterclockwise to certain in the range of 0-90 ° of axis 31 angle of its plate face and vapor deposition source 3
During one angle such as 60 °, it can be made just to shelter from vapor deposition source 3 and the evaporation passage treated between plated substrate 4, make the deposition material cannot
Evaporation is to treating on plated substrate 4, thus avoids the deposition material controlling stage speed unstable at evaporation rate to be deposited with base to be plated
On plate 4, cause steaming film plating layer abnormal.When vapor deposition source 3 starts to be deposited with, guard mechanism 2 is rotated clockwise to its plate face and evaporation
During axis 31 angle in source 3 a certain angle in the range of 0-90 ° such as 90 °, the plate face of guard mechanism 2 can be made no longer to block evaporation
Source 3 and the evaporation passage treated between plated substrate 4, can also keep the evaporation between vapor deposition source 3 and evaporation rate induction apparatus 5 to lead to simultaneously
Road is opened, and now, deposition material can be normally deposited with by vapor deposition source 3 to be treated on plated substrate 4, meanwhile, and evaporation rate induction apparatus 5 energy
Enough normally monitor and control evaporation rate.When vapor deposition source 3 is not deposited with, guard mechanism 2 turns to its plate face just by vapor deposition source 3
The position that covers of evaporation opening.
In the present embodiment, guard mechanism 2 uses metal material.The guard mechanism 2 of metal material has deposition material
Good carrying effect, i.e. owing to controlling the stage at evaporation rate, guard mechanism 2 has blocked vapor deposition source 3 and has treated between plated substrate 4
Evaporation passage, be deposited with on guard mechanism 2 so deposition material has part in this stage, the guard mechanism 2 of metal material
It is not easy to make evaporation split away off to deposition material thereon, thus avoids after the deposition material come off falls in vapor deposition source 3
The quality of evaporation is had undesirable effect.
In the present embodiment, as in figure 2 it is shown, the block surface towards vapor deposition source 3 that is used for of guard mechanism 2 is set to latticed.
Latticed block surface can make the evaporation deposition material to this face be firmly adhered in grid, thus further increases screening
The retaining device 2 bearing capacity to evaporation to deposition material thereon, makes evaporation be not easy to come off to deposition material thereon, it is ensured that
Evaporation can be normally carried out.
It should be noted that can also only allow the block surface of guard mechanism 2 use metal material, and its of guard mechanism 2
He partly uses the material that the weight ratio such as plastics or pottery is lighter, so can also reduce the gravity of guard mechanism 2 entirety, make screening
Retaining device 2 is not easy to rotate because of gravity position change.
In the present embodiment, radical occlusion device also includes control module (not shown), and control module is with actuating unit 1 even
Connect, be used for controlling actuating unit 1 action, to drive guard mechanism 2 to block vapor deposition source 3 and the evaporation passage treated between plated substrate 4；
And drive guard mechanism 2 to shift one's position, so that vapor deposition source 3 and the evaporation passage treated between plated substrate 4 are opened.Control module
Arranging, the evolution making guard mechanism 2 is more intelligent, thus further increases evaporation efficiency.
Said structure based on radical occlusion device, the present embodiment also provides for the occlusion method of this radical occlusion device a kind of, including:
Evaporation rate controls the stage, and actuating unit 1 drives guard mechanism 2 to block vapor deposition source 3 and the evaporation passage treated between plated substrate 4,
And keep the evaporation passage between vapor deposition source 3 and evaporation rate induction apparatus 5 to open (as shown in Figure 3).At evaporation stage, engine
Structure 1 drives guard mechanism 2 to open vapor deposition source 3 and the evaporation passage treated between plated substrate 4, and continues to keep vapor deposition source 3 and evaporation
Evaporation passage between speed induction apparatus 5 opens (as shown in Figure 4).
Embodiment 2:
The present embodiment provides a kind of radical occlusion device, as different from Example 1, as it is shown in figure 5, guard mechanism 2 is in cylinder
Shape, one end nozzle of cylinder is for relative with the evaporation face of vapor deposition source 3, and the barrel dliameter of cylinder prolongs along the direction away from actuating unit 1
Stretching, the diameter of cylinder is more than or equal to the diameter of vapor deposition source 3；Guard mechanism 2 can be at axis 31 angle of its barrel dliameter with vapor deposition source 3
Rotate clockwise and anticlockwise in the range of 0-90 °.
In the present embodiment, control the stage at evaporation rate, when cylindric guard mechanism 2 turns to block position, just
Vapor deposition source 3 and the evaporation treated between plated substrate 4 passage can be sheltered from completely, it is to avoid control stage speed at evaporation rate unstable
Fixed deposition material is deposited with to be treated on plated substrate 4, causes steaming film plating layer abnormal.
Wherein, controlling the stage at evaporation rate, cylindric guard mechanism 2 can forward its other end nozzle and evaporation speed just to
Rate induction apparatus 5 is just relative, i.e. the bearing of trend of cylinder barrel dliameter evaporation just and between vapor deposition source 3 and evaporation rate induction apparatus 5
Passage bearing of trend is consistent, and now, the deposition material that vapor deposition source 3 is evaporated is just introversive along the cylinder of cylindric guard mechanism 2
Evaporation rate induction apparatus 5 is deposited with, and is controlled with the evaporation rate to deposition material；Meanwhile, in this stage, the steaming of vapor deposition source 3
Plating material cannot be deposited with to be treated on plated substrate 4.In that case it is preferable that the inner core face of cylindric guard mechanism 2 is set to
Latticed.
In the present embodiment, other structures and the occlusion method of radical occlusion device are in the same manner as in Example 1, and here is omitted.
It is further to note that guard mechanism 2 can also use the structure of other shapes, as long as can be at evaporation rate
Vapor deposition source 3 and the evaporation passage treated between plated substrate 4 are realized blocking by the control stage.
The beneficial effect of embodiment 1-2: the radical occlusion device that embodiment 1-2 is provided, by arranging guard mechanism, Ji Neng
The evaporation rate control stage blocks vapor deposition source and the evaporation passage treated between plated substrate, and keeps vapor deposition source to sense with evaporation rate
Evaporation passage between device is opened；Vapor deposition source and the evaporation passage treated between plated substrate can be opened in the evaporation stage again, and continue
The evaporation passage between vapor deposition source and evaporation rate induction apparatus is kept to open, it is achieved that can be deposited with in advance before evaporation
The rate controlled of material, when evaporation starts, the speed of deposition material has reached stable, it is achieved thereby that the seriality control of evaporation
System, not only shortens the evaporation time, and has saved deposition material, and then not only increase production capacity, and saved cost, with
Time also improve stability and the yield of evaporation.
Embodiment 3:
The present embodiment provides a kind of deposition system, including embodiment 1-2 radical occlusion device in any one.
Wherein, deposition system also include vapor deposition source, evaporation rate induction apparatus and evaporation film thickness controller, vapor deposition source for
Treat to steam on plated substrate film plating layer.Evaporation rate induction apparatus is for gathering the evaporation rate of vapor deposition source, and the evaporation rate that will gather
It is sent to be deposited with film thickness controller.Evaporation film thickness controller is for controlling evaporation to the film layer treated on plated substrate according to evaporation rate
Thickness.The control module of radical occlusion device connects evaporation film thickness controller, and evaporation film thickness controller is additionally operable to control this control module
Control instruction is sent to actuating unit.
By using embodiment 1-2 radical occlusion device in any one, it is achieved that the seriality evaporation control of this deposition system
System, makes this deposition system not only shorten the evaporation time, and has saved deposition material, thus not only increase production capacity, and
Save cost, also improve stability and the yield of evaporation simultaneously.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the exemplary enforcement that uses
Mode, but the invention is not limited in this.For those skilled in the art, in the essence without departing from the present invention
In the case of god and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a radical occlusion device, including actuating unit and guard mechanism, it is characterised in that described actuating unit is used for driving described
Guard mechanism conversion diverse location, described guard mechanism is for blocking vapor deposition source and the evaporation passage treated between plated substrate, and protects
Hold the evaporation passage between described vapor deposition source and evaporation rate induction apparatus to open；It is additionally operable to open described vapor deposition source to be plated with described
Evaporation passage between substrate, and keep the evaporation passage between described vapor deposition source and described evaporation rate induction apparatus to open.
Radical occlusion device the most according to claim 1, it is characterised in that described evaporation rate induction apparatus and described treat plated substrate
It is respectively positioned on the top of described vapor deposition source, and described evaporation rate induction apparatus and described treat that plated substrate is in described vapor deposition source place plane
On orthographic projection lay respectively at the opposite sides of described vapor deposition source；
Described actuating unit is for being arranged on the side corresponding with described substrate position to be plated of described vapor deposition source, described power
Mechanism includes power source, the first drivening piece and the second drivening piece, and described power source is flexibly connected with described first drivening piece, described
First drivening piece is flexibly connected with described second drivening piece, and described power source can drive described first drivening piece to rotate, so that institute
Stating the first drivening piece drives described second drivening piece to rotate；
Described guard mechanism connect described second drivening piece, described guard mechanism can under the drive of described second drivening piece with
The axis angle of described vapor deposition source rotates in the range of being 0-90 ° clockwise and anticlockwise.
Radical occlusion device the most according to claim 2, it is characterised in that the rectangular tabular of described guard mechanism, described in block
The long edge of mechanism extends away from the direction of described actuating unit, and the width of described guard mechanism is more than or equal to described vapor deposition source
Diameter；Described guard mechanism can in the range of the axis angle in its plate face Yu described vapor deposition source is 0-90 ° clockwise and the inverse time
Pin rotates.
Radical occlusion device the most according to claim 2, it is characterised in that described guard mechanism cylindrically, described cylinder
One end nozzle is for relative with the evaporation face of described vapor deposition source, and the barrel dliameter of described cylinder prolongs along the direction away from described actuating unit
Stretching, the diameter of described cylinder is more than or equal to the diameter of described vapor deposition source；Described guard mechanism can be in its barrel dliameter and described vapor deposition source
Axis angle be 0-90 ° in the range of rotate clockwise and anticlockwise.
5. according to the radical occlusion device described in claim 1-4 any one, it is characterised in that described guard mechanism uses metal material
Material.
6. according to the radical occlusion device described in claim 1-4 any one, it is characterised in that described guard mechanism for towards
The block surface of described vapor deposition source is set to latticed.
Radical occlusion device the most according to claim 2, it is characterised in that described power source includes pneumatic source or electronic source, institute
State the first drivening piece and include that worm screw, described second drivening piece include turbine；Described worm screw is mutually movable with described turbine to be engaged, institute
Stating power source can drive described worm screw to rotate, and described worm screw can drive described turbine rotation.
Radical occlusion device the most according to claim 1, it is characterised in that also include control module, described control module and institute
State actuating unit to connect, be used for controlling described actuating unit action, to drive described guard mechanism to block described vapor deposition source and institute
State the evaporation passage treated between plated substrate；And drive described guard mechanism to shift one's position, so that described vapor deposition source is treated with described
Evaporation passage between plated substrate is opened.
9. a deposition system, it is characterised in that include the radical occlusion device described in claim 1-8 any one.
Deposition system the most according to claim 9, it is characterised in that also include vapor deposition source, evaporation rate induction apparatus and steaming
Plating film thickness controller, described vapor deposition source is for treating to steam on plated substrate film plating layer；Described evaporation rate induction apparatus is used for gathering institute
State the evaporation rate of vapor deposition source, and the described evaporation rate gathered is sent to described evaporation film thickness controller；Described evaporation film
Thick controller is for controlling evaporation to the described thicknesses of layers treated on plated substrate according to described evaporation rate；
The control module of described radical occlusion device connects described evaporation film thickness controller, and described evaporation film thickness controller is additionally operable to control
Described control module sends control instruction to actuating unit.
The occlusion method of 11. 1 kinds of radical occlusion devices as described in claim 1-8 any one, it is characterised in that including:
Controlling the stage at evaporation rate, actuating unit drives guard mechanism to block vapor deposition source and the evaporation treating between plated substrate leads to
Road, and keep the evaporation passage between described vapor deposition source and evaporation rate induction apparatus to open；
In the evaporation stage, described actuating unit drives described guard mechanism open described vapor deposition source and described treat between plated substrate
Evaporation passage, and continue to keep the evaporation passage between described vapor deposition source and described evaporation rate induction apparatus to open.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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