JP4475968B2 - Vacuum evaporation machine - Google Patents

Description

  The present invention relates to a vacuum deposition machine for forming a thin film by depositing a deposition material on a deposition target such as a substrate.

  A vacuum deposition machine arranges a deposition material and an object to be deposited in a vacuum vessel, heats and melts the deposition material in a state where the inside of the vacuum vessel is decompressed, and vaporizes it by evaporation or sublimation. The thin film is formed by depositing on the surface of the vapor deposition body. In the vacuum vapor deposition machine, as an evaporation material heating method, an externally heated crucible method in which a crucible containing the evaporation material is heated by an external heater is used. In recent years, by using a vacuum deposition machine, not only the formation of a metal thin film by vapor deposition of a metal, but also the formation of an organic thin film by vapor deposition of an organic substance or a polymer thin film by co-evaporation using a plurality of organic substances, For example, it is used for forming an organic electroluminescence element (hereinafter abbreviated as an organic EL element) of a flat panel display (hereinafter abbreviated as FPD).

JP-A-10-152777

  In recent years, with the widespread use of FPDs, the size of FPD substrates has been increasing. As the FPD substrate becomes larger, it becomes difficult to form a uniform concentration distribution and flow of the vaporized vapor deposition material, and it is difficult to perform uniform vapor deposition on the FPD substrate and unevenness is likely to occur. . For example, for organic vapor deposition materials, the above-mentioned externally heated crucible method is often used for ease of control, and the temperature control of the vapor deposition material and the opening / closing amount of the shutter provided between the vapor deposition material and the substrate are limited. The amount of vapor from the vapor deposition material is controlled by control or the like. However, in the above method, although the total amount of vapor can be controlled, it is difficult to control the amount of vapor in the width direction of a large FPD substrate, and it has become difficult to obtain a uniform thin film by vapor deposition. .

  The present invention has been made in view of the above problems, and provides a vacuum vapor deposition machine capable of controlling the vapor distribution of vapor deposition material and forming a uniform flow to obtain a uniform thin film by vapor deposition even on a large substrate. The purpose is to do.

The vacuum vapor deposition machine according to the present invention that solves the above problems is as follows.
A conveying means provided in the vacuum container for conveying the substrate;
A deposition chamber provided on the lower surface side of the substrate, and having at least the length of the deposition region in the plate width direction which is a direction perpendicular to the transport direction of the substrate;
A plurality of evaporation chambers provided on the lower side of the vacuum vessel, and vaporizing or sublimating a plurality of vapor deposition materials to generate vapors of the plurality of vapor deposition materials;
A plurality of vapor amount control means for controlling the vapor amount of the vapor deposition material from the evaporation chamber in the plate width direction of the substrate, and at least the length of the deposition region in the plate width direction of the substrate;
A mixing chamber facing the plurality of vapor amount control means and in which the vapor of the vapor deposition material is mixed;
At least the length of the vapor deposition region in the plate width direction of the substrate, and disposed on the lower surface side of the substrate on the upper side of the vapor amount control means, parallel to the vapor deposition surface of the substrate, Vapor rectifying means for adjusting the distribution and flow of vapor of the vapor deposition material in the vapor deposition chamber;
Heating means for heating the wall surface of the vacuum vessel from the evaporation chamber to the vapor deposition chamber,
The steam amount control means includes
A block having a plurality of inlet holes and a plurality of outlet holes corresponding thereto in the plate width direction of the substrate;
And wherein each is rotatably fitted in the block, the shutter shafts cylindrical arranged is divided into a plurality of the plate width direction of the substrate,
Provided in each of the shutter shafts, and having a communication hole communicating the one inlet hole and the corresponding one outlet hole,
Each of the shutter shafts is independently rotated to control the amount of steam in the plate width direction.
The steam rectifying means is
A fixing plate having a plurality of first through holes;
Comprising a plurality of second through holes for controlling the opening area of the plurality of first through holes, each movable on a plane of the fixing plate to the plate width direction before Symbol substrate, arranged is divided into a plurality It has been to have the movable plate,
By independently moving the movable plate, respectively, characterized in der Rukoto which each control the steam amount of the plate width direction.

The vacuum vapor deposition machine according to the present invention that solves the above problems is as follows.
In the above vacuum evaporator,
The steam amount control means includes
Rotating means for rotating the shutter shaft is provided inside or outside the shutter shaft.
As the rotating means, for example, a protruding portion such as a gear or a knob is provided inside or outside the shutter shaft, and the shutter shaft itself is rotated by rotating the protruding portion by a rotating motion such as a rotating shaft.

The vacuum vapor deposition machine according to the present invention that solves the above problems is as follows.
In the above vacuum evaporator,
It said vapor rectifier means,
The first through hole and the second through hole are arranged at a predetermined interval, and an opening width of the first through hole and the second through hole is perpendicular to a moving direction of the movable plate. It is characterized by being identical.
A rectangular through hole corresponds to the same opening width of the through hole in the direction perpendicular to the moving direction of the movable plate.

The vacuum vapor deposition machine according to the present invention that solves the above problems is as follows.
It said vapor rectifier means,
The first through hole and the second through hole are arranged at a predetermined interval, and an opening width of the first through hole and the second through hole is perpendicular to a moving direction of the movable plate. It is characterized by being different.
A circular or elliptical through-hole corresponds to a case where the opening width of the through-hole differs in a direction perpendicular to the moving direction of the movable plate.

The vacuum vapor deposition machine according to the present invention that solves the above problems is as follows.
In the above vacuum evaporator,
The steam rectifying means is
Said second through-hole, you characterized in that a plurality of slits arranged at predetermined intervals.

The vacuum vapor deposition machine according to the present invention that solves the above problems is as follows.
In the above vacuum evaporator,
The steam rectifying means is
The predetermined interval is characterized in that the vapor distribution of the vapor deposition material in the vapor deposition chamber is uniform.
For example, if the vapor distribution of the vapor deposition material on the lower side (evaporation chamber side) of the vapor rectifying means is uniform in the plate width direction of the substrate, the through holes may be arranged at equal intervals, and the distribution is biased. If there is, the interval at which the through holes are arranged may be changed depending on the degree of deviation.

  According to the present invention, since it has means for controlling the vapor amount of the vapor deposition material and rectifying the flow in the plate width direction of the glass substrate, it becomes possible to control the vapor deposition distribution in the plate width direction. Uniformity can be achieved.

  In addition, according to the present invention, since the vapor amounts of the plurality of vapor deposition materials are controlled independently, a desired mixing ratio can be obtained in the co-deposition, and the mixing ratio in the plate width direction of the glass substrate is also uniform. It is possible to obtain a vapor deposition thin film having a uniform desired composition ratio on the entire vapor deposition surface.

  The present invention provides a vapor deposition control means (spool shutter) for uniformly controlling the vapor amount of the vapor deposition material flowing from the evaporation chamber side to the substrate side in the plate width direction of the substrate, and the lower surface side of the substrate. And a vapor rectifying means (perforated plate shutter) arranged in parallel to the deposition surface of the substrate and regulating the in-plane distribution and flow of the vapor of the vapor deposition material in the vapor deposition chamber. The vapor distribution and flow are controlled to achieve uniform deposition.

FIG. 1 is a schematic plan view of an in-line film forming apparatus using a plurality of vacuum deposition apparatuses according to the present invention.
Hereinafter, as an example of the embodiment, description will be given by taking the formation of an organic EL element in an FPD as an example. However, the vacuum deposition apparatus according to the present invention is not limited to this, and formation of another thin film on another substrate. Can also be done. The present invention is suitable for a large substrate.

  The in-line film forming apparatus shown in FIG. 1 is configured to perform in-line formation of organic EL elements in an FPD. A gate door 1 is provided for each processing chamber, and each processing chamber is operated under different vacuum conditions. , Each process is configured to be executed.

  Specifically, a glass substrate that becomes an FPD is transported from the left side in FIG. 1 by a transport roller (not shown), and transported to the mask mounting chamber 2 through the gate door 1. In the mask mounting chamber 2, the mask used for forming the pattern of the organic EL element is transferred from the mask stocker 2a and mounted on the glass substrate, and the pressure is reduced from the atmosphere to the vacuum using a vacuum pump (not shown). Is done.

  After reaching a predetermined degree of vacuum, the glass substrate on which the mask is mounted is sequentially transferred to the film forming chambers 3a, 3b, and 3c. In these film forming chambers 3a, 3b and 3c, a vacuum vapor deposition apparatus according to the present invention which will be described later is used. In the in-line film forming apparatus of FIG. 1, three light emitting layers for organic EL elements are formed. The film forming chambers 3a, 3b, 3c are connected in series. Note that the number and structure of the film forming chambers are configured by appropriately combining the order and number of the thin films themselves to be formed in accordance with the number of thin films to be formed and the purpose thereof.

After the film formation is performed in the film formation chambers 3a, 3b, and 3c, the glass substrate is transferred to the mask desorption chamber 4. In the mask desorption chamber 4, the mask used in the film formation chambers 3a, 3b, and 3c is detached, and a new mask used in the next processing chamber (Al sputtering chamber 6) is transported from the mask stocker 4a and mounted. To do. The mask detached in the mask desorption chamber 4 is cleaned in the mask cleaning chamber 5 using O ₂ plasma or the like, and then transferred to the mask stocker 5a.

  The glass substrate on which the new mask is mounted is transferred to the Al sputtering chamber 6, and a metal thin film serving as a wiring to the light emitting layer of the organic EL element is formed in the Al sputtering chamber 6. Thereafter, the mask is transferred to the mask removal chamber 7, where the mask is detached, the removed mask is transferred to the mask stocker 7 a, and the glass substrate is transferred to the sealing chamber 8. In the sealing chamber 8, the organic EL element formed by film formation is sealed using the sealing material supplied from the sealing material supply chamber 8a. After sealing, the glass substrate is transferred from the sealing chamber 8.

  FIG. 2 is a schematic view showing an example of the configuration of the film forming chambers 3a, 3b, and 3c in FIG. 1, and each of the film forming chambers 3a, 3b, and 3c is configured by the vacuum vapor deposition apparatus according to the present invention. It is a thing. The film formation chambers 3a and 3c are each a vacuum vapor deposition machine using one vapor deposition material, and the film formation chamber 3b is a vacuum vapor deposition machine for co-vapor deposition using two vapor deposition materials. FIG. 3 shows the internal configuration of the film forming chamber 3b.

  As shown in FIG. 2, the transport machine 11 (transport means) is configured by combining a plurality of drive rollers 11 a and free rollers 11 b in the direction in which the glass substrate 12 is transported. Container). When the film forming process is performed in the film forming chambers 3a, 3b, and 3c, the transfer device 11 is fixed so that the film thickness of the thin film to be formed becomes uniform along the transfer direction of the glass substrate 12. The glass substrate 12 is moved at a predetermined speed. The driving roller 11a and the free roller 11b support the glass substrate 12 by being arranged at both ends of the glass substrate 12 so as not to contact the film forming portion of the glass substrate 12.

  The thickness and uniformity of the thickness of the thin film of the glass substrate 12 in the transport direction can be adjusted to desired conditions by adjusting the moving speed by the transport machine 11, but the glass substrate 12 becomes large. Accordingly, the film thickness in the direction perpendicular to the conveying direction of the glass substrate 12 (hereinafter referred to as the plate width direction L. Refer to FIG. 3 for the plate width direction L), that is, the glass substrate in the plate width direction L. The uniformity of the 12 deposited thin films has been a problem with conventional vacuum deposition machines. In order to improve the uniformity of the deposited thin film in the plate width direction L, the present invention is configured as shown in FIGS. 2 and 3 using the steam amount control means and the steam rectifying means shown in FIGS. Thus, the vacuum vapor deposition apparatus according to the present invention is configured.

  As shown in FIG. 2, the film forming chamber 3a includes a chamber 14a (vacuum container) in which the wall surface from the evaporation chamber 18 to the vapor deposition chamber 25a is heated by a plurality of heaters 13 (heating means). The chamber 14a is a so-called hot wall chamber, and is configured such that the vaporized deposition material 15 is not deposited on the wall surface or the like in the course of reaching the glass substrate 12, and a plurality of unillustrated pluralities are shown. The temperature sensor is used to control the temperature at which the vapor deposition material 15 is not vapor deposited. When such a hot wall chamber is used, the use efficiency of the vapor of the vapor deposition material is improved and the film formation rate is also improved. The vapor deposition chamber 25a of the chamber 14a provided on the lower surface side of the glass substrate 12 is long in the direction of the plate width direction L of the glass substrate 12, and at least the length of the deposition region of the glass substrate 12 in the plate width direction L. Have

  Further, as shown in FIG. 2, an evaporation chamber 18 (so-called crucible portion) that has a vapor deposition material 15 from the lower side of the chamber 14 a and vaporizes or sublimates the vapor deposition material 15 to generate vapor of the vapor deposition material 15. ), A spool shutter 21 (vapor amount control means) that controls the vapor amount of the vapor deposition material 15 from the evaporation chamber 18 to the glass substrate 12 side in the plate width direction L of the glass substrate 12, and a plurality of A perforated plate shutter 23 (steam rectifying means), which is composed of a fixed plate and a movable plate having a through hole, adjusts the in-plane distribution and flow of the vapor of the vapor deposition material 15 in the vapor deposition chamber 25a, and adjusts uniformly. A plurality of through-holes smaller than the through-holes and a porous rectifying plate 24 that further regulates the in-plane distribution and flow of the vapor of the vapor deposition material 15 are arranged in order toward the glass substrate 12 side.

  The vapor of the vapor deposition material 15 is uniformly distributed through the spool shutter 21, the perforated plate shutter 23, and the perforated flow straightening plate 24, and then vapor deposited on the glass substrate 12 in the vapor deposition chamber 25a. Similar to the vapor deposition chamber 25a, these constituent members also have a length in the plate width direction L of the glass substrate 12 that is at least equal to the length of the vapor deposition region of the glass substrate 12 in the plate width direction. However, in the case of the present invention, since the spool shutter 21 and the perforated plate shutter 23 described later have a function of controlling the uniformity of vapor deposition in the plate width direction L, the length of the vapor deposition chamber 18 in the plate width direction L is not necessarily equal. It does not have to be the length.

  In this embodiment, the chamber 14a and the chamber 14c have the same configuration, and the vapor deposition material 17 in the chamber 14c is different from the vapor deposition material 15 in the chamber 14a depending on the thin film to be formed. These chambers 14a, 14b, and 14c are each independently controlled to have a high degree of vacuum by a vacuum pump (not shown). For example, a high degree of vacuum is achieved using a cryopump or the like.

  As shown in FIGS. 2 and 3, the film forming chamber 3b includes a chamber 14b in which the wall surfaces from the evaporation chambers 19a and 19b to the vapor deposition chamber 25b are heated by a plurality of heaters 13 (heating means). Two evaporation chambers 19a and 19b for co-evaporation are provided inside. Specifically, in the chamber 14b, there are an evaporation chamber 19a having an evaporation material 16a, an evaporation chamber 19b having an evaporation material 16b, and evaporation materials 16a and 16b from the evaporation chambers 19a and 19b to the mixing chamber 22 side. Two spool shutters 21 that control the vapor amount to have a uniform distribution in the plate width direction L of the glass substrate 12, and the mixing chamber 22 in which the two spool shutters 21 face and the vapors of the vapor deposition materials 16 a and 16 b are mixed. A perforated plate shutter 23 comprising a fixed plate and a movable plate having a plurality of through-holes, and adjusting the in-plane distribution and flow of the air-fuel mixture of the vapor deposition materials 16a and 16b in the vapor deposition chamber 25b to uniformly adjust them. A porous rectifying plate 24 having a plurality of through holes smaller than the above through holes and further adjusting the in-plane distribution and flow of the mixture of the vapor deposition materials 16a and 16b is located below the chamber 14b. They are arranged in this order to the glass substrate 12 side.

  The vapors of the vapor deposition materials 16a and 16b from the evaporation chambers 19a and 19b pass through the two spool shutters 21 to become an air-fuel mixture having an appropriate mixing ratio in the mixing chamber 22, and the perforated plate shutter 23 and the perforated rectifying plate 24 are passed through. After the uniform distribution, vapor deposition on the glass substrate 12 is performed in the vapor deposition chamber 25b. In the film forming chamber 3b, a thin film having a desired composition ratio is formed using different vapor deposition materials 16a and 16b.

  When forming a light emitting layer of an organic EL element, a host material is used for one vapor deposition material, a dope material is used for the other vapor deposition material, and the ratio of the dope material mixed with the host material is determined by the spool shutter 21. By appropriately controlling, a light emitting layer having desired properties can be formed. For example, in a case where the evaporation chambers 19a and 19b can be independently controlled in temperature, the evaporation chambers 19a and 19b are controlled to different temperatures by using the evaporation materials 16a and 16b having different vapor temperatures, respectively. Steams 16a and 16b are generated and mixed in the mixing chamber 22 at a desired mixing ratio. At this time, when the mixing ratio is greatly different, it is possible to easily form a thin film having an ideal composition ratio by configuring the control range of the vapor amount by each spool shutter 21 to be different from the beginning. become. In this embodiment, the configuration of the film formation chamber in the case where two vapor deposition materials are used is shown. However, in order to increase the vapor deposition material further, the evaporation chamber and the spool shutter may be further increased. Even in this case, by using the spool shutter 21 that controls the amount of steam to the mixing chamber, the dope material can be mixed with the host material at a desired mixing ratio without unevenness of the inflow amount in the plate width direction L. .

  The spool shutter 21 supplies a uniform amount of vapor (concentration distribution) in the plate width direction L of the glass substrate 12. If an equivalent function is obtained, the arrangement and direction of the flow path through which the vapor passes is particularly Not limited. For example, FIG. 3 shows a configuration in which the flow path of the spool shutter 21 is different from that in FIG. 2. In this case, the direction of the flow path is changed inside the spool shutter 21 to mix the steam. It is the structure which flows into the chamber 22 side. The spool shutter 21 is provided with a plurality of flow paths in the plate width direction L in order to uniformly supply the vapor amount of the vapor deposition material in the plate width direction L of the glass substrate. Each of them can be controlled independently. The structure and operation of the spool shutter 21 having such a configuration will be described in detail with reference to FIG. FIG. 5 shows another embodiment of the spool shutter 21.

  4 (a) is a perspective view of a spool shutter constituting the vacuum vapor deposition apparatus according to the present invention, and FIGS. 4 (b) and 4 (c) are cross-sectional views taken along line AA in FIG. 4 (a). It shows the operating status of the spool shutter.

  As shown in FIG. 4, the spool shutter 21 </ b> A is provided at least in a rectangular parallelepiped shutter block 31 having the length of the deposition area in the plate width direction L of the glass substrate 12 and in the longitudinal direction inside the shutter block 31. A cylindrical space portion and a plurality of cylindrical shutter shafts 32 rotatably fitted in the cylindrical space portion are provided. That is, in other words, a plurality of divided columns (shutter shafts 32) are combined in a column in the plate width direction L in the cylindrical space portion inside the block 31. In the shutter block 31, an inlet hole 33 and an outlet hole 34 are formed at opposing positions, and the plurality of inlet holes 33 and outlet holes 34 are formed in the plate width direction L. In addition, a communication hole 35 is formed in the shutter shaft 32 so as to communicate with the inlet hole 33 and the outlet hole 34 at the corresponding positions, and when arranged at a predetermined position, as shown in FIG. As shown, the inlet hole 33, the outlet hole 34 and the communication hole 35 at the corresponding positions communicate with each other so that the maximum amount of steam can flow.

  When adjusting the amount of steam, as shown in FIG. 4C, the relative position of the communication hole 35 with respect to the inlet hole 33 and the outlet hole 34 is adjusted by rotating the shutter shaft 32 itself. The opening area of 35 is reduced and the amount of steam is adjusted. At this time, the rotation of the shutter shaft 32 is performed by fitting the notch portion 40 of the disk-like key 39 penetrating the drive shaft 38 into the protruding portion 37 of the space portion 36 formed inside the shutter shaft 32. (Rotating means). By using this, the shutter shaft 32 whose rotation position is desired to be changed can be independently adjusted according to the position of the insertion depth of the key 39 in the space 36, and each shutter shaft can be adjusted to an appropriate rotation position. By adjusting this, it becomes possible to supply a uniform amount of steam in the plate width direction L. Since the communication hole 35 of the shutter shaft 32 has a cylindrical space portion 36 inside the shutter shaft 32, a flow path is formed so as to bypass the space portion 36. The adjustment of the shutter shaft 32 may be performed manually using the key 39, or may be performed automatically by performing rotation control and insertion position control of the drive shaft 38 by driving means such as a motor. .

  Note that the control of the amount of steam by the spool shutter 21A is mainly performed by changing the opening area of the communication hole 35. However, the amount of steam that actually passes through the spool shutter 21A depends on other physical elements, for example, It is also influenced by the differential pressure between the pressure in the evaporation chambers 16a and 16b and the pressure in the mixing chamber 22. However, the vacuum vapor deposition apparatus according to the present invention is provided with a vacuum gauge (not shown) in each chamber (evaporation chamber, mixing chamber, vapor deposition chamber, etc.), and the difference between the evaporation chambers 16a and 16b and the mixing chamber 22 is provided. The opening area of the communication hole 35 is determined in consideration of the pressure. The same applies to a spool shutter 21B described later. Further, in the case of a perforated plate shutter 23 described later, the opening area of the through hole is determined in consideration of the differential pressure between the mixing chamber 22 and the vapor deposition chamber 25b.

  FIG. 5A is a perspective view of another embodiment of the spool shutter constituting the vacuum vapor deposition apparatus according to the present invention, and FIGS. 5B and 5C are BB in FIG. 5A. FIG. 4 is a cross-sectional view taken along the line arrow, and shows the operating state of the spool shutter.

  As shown in FIG. 5, the spool shutter 21 </ b> B is provided at least in a rectangular parallelepiped shutter block 41 having the length of the deposition area in the plate width direction L of the glass substrate 12 and in the longitudinal direction inside the shutter block 41. It has a cylindrical space portion and a plurality of cylindrical shutter shafts 42 fitted in the cylindrical space portion. In the shutter block 41, an inlet hole 43 and an outlet hole 44 are formed at opposing positions, and the communication hole 45 formed in the shutter shaft is shown in FIG. As described above, the inlet hole 43, the communication hole 45, and the outlet hole 44 are completely communicated with each other so that the maximum amount of steam can flow. When adjusting the amount of steam, the relative position of the communication hole 45 with respect to the inlet hole 43 and the outlet hole 44 is adjusted by rotating the shutter shaft 42 as shown in FIG. The amount of steam is adjusted by reducing the opening area.

  The rotation of the shutter shaft 42 is performed using a knob 47 provided on the outer surface of the cylinder of the shutter shaft 32, and the knob 47 is configured to be adjustable from the outside through a hole 46 formed in the shutter block 41. (Rotating means). When adjusting the rotation position of the other shutter shafts 42, the rotation position of each shutter shaft 42 can be adjusted independently by using the knob 47 of the other shutter shaft 42. In the present embodiment, since the rotation position is adjusted using the knob 47, the communication hole 45 of the shutter shaft 42 may be a straight flow path, and compared with the communication hole 35 of the shutter shaft 32 of the second embodiment. And can be easily manufactured.

  The perforated plate shutter 23 is disposed on the lower surface side of the glass substrate 12 in parallel with the deposition surface of the glass substrate 12 together with the perforated current plate 24 having a number of smaller through holes. On the glass substrate 12, the in-plane distribution of the vapor amount and the in-plane flow of the vapor deposition material are uniformly arranged on the entire surface of the deposition chamber of the glass substrate 12 exposed in the deposition chamber. A uniform deposited thin film is formed. The structure and operation of the perforated plate shutter 23 will be described with reference to FIGS. FIG. 8 shows another embodiment of the perforated plate shutter 23.

  As shown in FIGS. 6A and 6B, the perforated plate shutter 23 according to the present invention includes at least a fixed perforated plate 61 having a length of a deposition area in the plate width direction L of the glass substrate 12, and a handle. By using the parts 62a, 62b, 62c, a plurality of movable porous plates 63a, 63b, 63c (opening area control means) that can move horizontally on the plane of the fixed porous plate 61 are provided (three in FIG. 6). In other words, the movable porous plates 63a, 63b, and 63c are arranged so as to be horizontally movable in the plate width direction L in different regions from each other on the same plane on the fixed porous plate 61.

  The fixed perforated plate 61 is provided with a plurality of circular or elliptical through holes 64 (first through holes), and the circular or elliptical through holes are provided at positions corresponding to the through holes 64. Holes 65a, 65b, and 65c (second through holes) are provided in the movable porous plates 63a, 63b, and 63c. For example, when the through hole 64 and the through holes 65a, 65b, and 65c have the same shape, the same size, and the same interval, the through holes 65a, 65b, and 65c do not block the through hole 64 at a predetermined position. The maximum opening area through which steam passes can be obtained, and by moving from the predetermined position, the through holes 65a, 65b, 65c block a part of the through hole 64, and the opening area is adjusted. (See FIG. 6 (c)).

  In the perforated plate shutter 23, since a plurality of movable perforated plates 63a, 63b, 63c are arranged on the plane of the fixed perforated plate 61, each movable perforated plate 63a, 63b, 63c can be moved independently. Thus, the amount of vapor passing through the through holes 65a, 65b, 65c of the movable porous plates 63a, 63b, 63c can be controlled independently by each of the movable porous plates 63a, 63b, 63c. In the perforated plate shutter 23 shown in FIG. 6, with respect to the plate width direction L of the glass substrate 12, the movable perforated plate 63b corresponding to the position of the central portion and the movable perforated plates 63a and 63c corresponding to the positions of the peripheral portion are provided. Therefore, the thickness of the thin film in the plate width direction L is made uniform by rectifying the vapor amounts in the central portion and the peripheral portion of the glass substrate 12 where the difference in the thickness of the thin film tends to be large. I have to. In consideration of the ease of supporting the movable porous plates 63a, 63b, and 63c, it is better to dispose the movable porous plates 63a, 63b, and 63c on the fixed porous plate 61, but the arrangement is not necessarily limited to this. Good. Further, the number, size, and arrangement position of the through holes 64, 65a, 65b, 65c are determined by the required amount of steam.

  7A and 7B show the through holes of the movable porous plates 63a, 63b, and 63c when the through holes 65a, 65b, and 65c of the movable porous plates 63a, 63b, and 63c are arranged at equal intervals. It is a figure which shows the positional relationship of 65a, 65b, 65c.

As shown in FIG. 7 (a), when the through holes 65a, 65b, 65c are arranged at the same intervals W _1, when placed movable perforated plate 63a, 63 b, the 63c in position, the movable perforated plate 63a , 63b, adjacent the through-hole 65a of 63c, 65b, the interval of 65c each other the same distance W _1. As shown in FIG. 7B, when the movable porous plates 63a, 63b, 63c are moved, only the interval between the adjacent through holes 65a, 65b, 65c of the movable porous plates 63a, 63b, 63c is obtained. , The intervals W ₂ and W ₃ change. At this time, according to the positions of the movable porous plates 63a, 63b, 63c, the through holes 64 of the fixed porous plate (not shown) are closed, the opening area changes, and the amount of vapor passing therethrough also changes.

  7 (c) and 7 (d) show that the movable perforated plates 66a, 66b and 66c are penetrated when the through holes 67a, 67b and 67c of the movable perforated plates 66a, 66b and 66c are arranged at unequal intervals. It is a figure which shows the positional relationship of hole 67a, 67b, 67c.

As shown in FIG. 7 (c), pierced with holes 67a to each other the same distance W _4, a through hole 67b with each other the same distance W _6, when the through hole 67c to each other are arranged at the same intervals W _8, the movable perforated plate When 66a, 66b, 66c are arranged at predetermined positions, the distance between the adjacent through holes 67a, 67b, 67c of the movable porous plates 66a, 66b, 66c, specifically, the distance between the through hole 67a and the through hole 67b. Is the interval W ₅ , and the interval between the through hole 67 b and the through hole 67 c is the interval W ₇ . As shown in FIG. 7B, when the movable porous plates 66a, 66b, 66c are moved, only the distance between the adjacent through holes 67a, 67b, 67c of the movable porous plates 66a, 66b, 66c is obtained. The intervals W ₉ and W ₁₀ change. At this time, according to the position of the movable perforated plates 66a, 66b, 66c, the through hole 64 of the fixed perforated plate (not shown) is closed, the opening area is changed, and the amount of vapor passing therethrough is also changed. When there is a part where the amount of steam tends to be excessively supplied, and conversely, when there is a part where the amount of steam tends to be insufficiently supplied, as shown in FIGS. In other words, the distribution of the vapor amount may be controlled by increasing or decreasing the interval between the through holes.

  In the perforated plate shutter 23 shown in FIG. 6 and FIG. 7, a circular or elliptical shape is used as the shape of the through-hole, but various shapes of through-holes and further combinations of various through-holes are used. The perforated plate shutter 23 may be configured, and any combination is possible without departing from the gist of the present invention. FIG. 8 illustrates some examples.

  FIG. 8A shows another example of the perforated plate shutter. The fixed perforated plate 61 is the same as that described above, and has a plurality of circular through holes 64. The movable perforated plate 71a (opening area control means) movably disposed on the fixed perforated plate 61 has a comb shape and has a plurality of U-shaped slits 72a disposed at predetermined intervals, and the movable perforated plate 71a. Is moved to change the opening area of the through-hole 64 and adjust the amount of vapor passing therethrough.

  FIG. 8B also shows another example of the perforated plate shutter. A fixed perforated plate 73 and a movable perforated plate 75a (opening area control means) that is movably disposed on the fixed perforated plate 73 are shown in FIG. , Both have a plurality of through holes 74 and 76a having the same size and the same rectangular shape. By moving the movable perforated plate 75a, the opening area of the through hole 74 is changed to adjust the amount of vapor passing therethrough. In the case of the perforated plate shutter of this embodiment, the fixed perforated plate 73 and the movable perforated plate 75a both have the same size and the same rectangular through holes 74 and 76a, and the opening width of the through holes is that of the movable perforated plate. Since it is the same in the direction perpendicular to the moving direction, when the movable perforated plate 75a is moved, the opening area is changed linearly in proportion to the moving amount, and the amount of vapor passing in accordance with the change. Also changes linearly. Conversely, in the case of the perforated plate shutter 23 using the circular or elliptical through hole shown in FIGS. 6 and 7, the opening width of the through hole differs in the direction perpendicular to the moving direction of the movable perforated plate. Therefore, as the movable perforated plate 63a and the like move, the opening area is changed nonlinearly according to the amount of movement, and the amount of vapor passing therethrough also changes nonlinearly according to the change.

  FIG. 8C also shows another example of the perforated plate shutter. The fixed perforated plate 73 of the present embodiment is configured to have a plurality of rectangular through-holes 74 as in the eighth embodiment. However, the movable perforated plate 79a (opening area control means) is movably disposed on the fixed perforated plate 73. ) Has a plurality of specially shaped through holes 80a. The through-hole 80a is formed by integrating two rectangular through-holes having different sizes with a trapezoidal through-hole. For example, the through-hole 80a can be called a battledore shape. In the case of the perforated plate shutter of this embodiment, the fixed perforated plate 73 has a rectangular through-hole 74 and the movable perforated plate 75a has a feather plate-like through-hole 80a. Therefore, when the movable perforated plate 79a is moved, On the other hand, in a place where the width of the through hole 80a in the vertical direction is large, the opening area can be changed linearly with the movement of the movable porous plate 79a, and the width of the through hole 80a in the direction perpendicular to the movement direction can be changed. In a small area, the opening area can be changed linearly with the movement of the movable porous plate 79a. In other words, the part that wants to increase the amount of change with respect to the amount of movement has the characteristic of changing the desired opening area by increasing the width of the through hole and the part that wants to reduce the amount of change by reducing the width of the through hole As the opening area changes, the amount of vapor passing therethrough also changes.

  Thus, it is possible to control the desired change characteristic and the amount of steam in the desired control range by the shape of the through hole, the combination of the through holes, and the like.

It is a schematic plan view of the in-line film-forming apparatus using the vacuum evaporation machine concerning this invention. It is the schematic which shows an example of the structure which has arrange | positioned two or more vacuum evaporation machines concerning this invention. It is the schematic which shows an example of the internal structure of the vacuum evaporation machine which concerns on this invention. It is a figure which shows an example of the spool shutter which comprises the vacuum evaporation system which concerns on this invention. It is a figure which shows another example of the spool shutter which comprises the vacuum evaporation system which concerns on this invention. It is a figure which shows an example of the perforated plate shutter which comprises the vacuum evaporation machine concerning this invention. It is a figure explaining the adjustment method of the perforated plate shutter which comprises the vacuum evaporation system which concerns on this invention. It is a figure which shows the other structural example of the perforated plate shutter which comprises the vacuum evaporation system which concerns on this invention.

Explanation of symbols

3a, 3b, 3c Vacuum evaporation machine 11 Transporter 12 Glass substrate 13 Heater 14a, 14b, 14c Chamber 15, 16a, 16b, 17 Evaporation material 18, 19a, 19b, 20 Evaporation chamber 21, 21A, 21B Spool shutter 22 Mixing chamber 23 Perforated plate shutter 24 Perforated current plate 25a, 25b, 25c Deposition chamber 31, 41 Shutter block 32, 42 Shutter shaft 33, 43 Inlet hole 34, 44 Outlet hole 35, 45 Communication hole 61, 73 Fixed perforated plate 63a, 63b, 63c, 71a, 75a, 79a Movable porous plate 64, 74 Through hole 65a, 65b, 65c, 76a, 80a Through hole 72a Slit

Claims (6)

A conveying means provided in the vacuum container for conveying the substrate;
A deposition chamber provided on the lower surface side of the substrate, and having at least the length of the deposition region in the plate width direction which is a direction perpendicular to the transport direction of the substrate;
A plurality of evaporation chambers provided on the lower side of the vacuum vessel, and vaporizing or sublimating a plurality of vapor deposition materials to generate vapors of the plurality of vapor deposition materials;
A plurality of vapor amount control means for controlling the vapor amount of the vapor deposition material from the evaporation chamber in the plate width direction of the substrate, and at least the length of the deposition region in the plate width direction of the substrate;
A mixing chamber facing the plurality of vapor amount control means and in which the vapor of the vapor deposition material is mixed;
At least the length of the vapor deposition region in the plate width direction of the substrate, and disposed on the lower surface side of the substrate on the upper side of the vapor amount control means, parallel to the vapor deposition surface of the substrate, Vapor rectifying means for adjusting the distribution and flow of vapor of the vapor deposition material in the vapor deposition chamber;
Heating means for heating the wall surface of the vacuum vessel from the evaporation chamber to the vapor deposition chamber,
The steam amount control means includes
A block having a plurality of inlet holes and a plurality of outlet holes corresponding thereto in the plate width direction of the substrate;
A cylindrical shutter shaft that is rotatably fitted in the block and is divided into a plurality of parts in the plate width direction of the substrate;
Provided in each of the shutter shafts, and having a communication hole communicating the one inlet hole and the corresponding one outlet hole,
Each of the shutter shafts is independently rotated to control the amount of steam in the plate width direction.
The steam rectifying means is
A fixing plate having a plurality of first through holes;
A plurality of second through-holes for controlling the opening areas of the plurality of first through-holes are provided, and each of the plurality of first through-holes is arranged on the plane of the fixed plate so as to be movable in the plate width direction of the substrate. A movable plate
A vacuum vapor deposition machine characterized in that each of the movable plates is independently moved to control the amount of vapor in the plate width direction. In a vacuum deposition apparatus according to claim 1,
The steam amount control means includes
A vacuum evaporation machine comprising a rotating means for rotating the shutter shaft inside or outside the shutter shaft. In the vacuum evaporation machine according to claim 1 or claim 2 ,
The steam rectifying means is
The first through hole and the second through hole are arranged at a predetermined interval, and an opening width of the first through hole and the second through hole is perpendicular to a moving direction of the movable plate. Vacuum deposition machine characterized by being identical. In the vacuum evaporation machine according to claim 1 or claim 2 ,
The steam rectifying means is
The first through hole and the second through hole are arranged at a predetermined interval, and an opening width of the first through hole and the second through hole is perpendicular to a moving direction of the movable plate. Vacuum deposition machine characterized by being different. In the vacuum evaporation machine according to claim 1 or claim 2 ,
The steam rectifying means is
The vacuum vapor deposition machine, wherein the second through holes are a plurality of slits arranged at predetermined intervals. In the vacuum evaporation machine in any one of Claim 3 thru | or 5 ,
The steam rectifying means is
The vacuum deposition apparatus characterized in that the predetermined interval is an interval that makes the vapor distribution of the vapor deposition material uniform in the vapor deposition chamber.

Images