US20160035947A1 - Package structure of light-emitting diode module and method for manufacturing the same - Google Patents
Package structure of light-emitting diode module and method for manufacturing the same Download PDFInfo
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- US20160035947A1 US20160035947A1 US14/450,414 US201414450414A US2016035947A1 US 20160035947 A1 US20160035947 A1 US 20160035947A1 US 201414450414 A US201414450414 A US 201414450414A US 2016035947 A1 US2016035947 A1 US 2016035947A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000000084 colloidal system Substances 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000007789 sealing Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 10
- 229910002027 silica gel Inorganic materials 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 description 4
- 238000004134 energy conservation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Definitions
- the present invention relates generally to a structure for reducing total reflection of light-emitting diode chips, and particularly to a package structure of light-emitting diode module and the method for manufacturing the same.
- LEDs Limit-emitting diodes
- Their applications are developing promisingly, including backlight plates of LCD, large signboards, headlights, and lighting applications.
- Taiwan early involvement was in die and wafer fabrication.
- the LED industry has established a delicate division of the supply chain.
- the domestic LED companies all endeavor in improving their capabilities in research and development for expanding to high value-added markets.
- a part of the innovation is related to the package material and structure of LEDs.
- LEDs are usually used as indicators or displays. They can convert electrical energy to photo energy directly with high efficiency. They also long usage hours as long as several tens to hundreds of thousands of hours. Moreover, in comparison with traditional bulbs, they also have the advantages of breakage resistance and saving power. Nonetheless, they all need a reasonable package form for various types before they are adopted in practical applications.
- the package form of LED depends on the application scenario, the appearance, the size, the heat dissipation solution, and the light emitting effect. There are many types in the package forms of LED. Currently, according to the package forms, LED chips are categorized into Lamp-LED, TOP-LED, Side-LED, SMD-LED, Flip Chip-LED, and High-Power-LED.
- the overall light-emitting performance is influenced by the LED chip, the package form, and the package material.
- the internal light-emitting efficiency of LED chip has reached above 90%. Nonetheless, owing to the influences of package structure and material, the equivalent light-emitting efficiency cannot be reached from the outside of LED modules. Thereby, the package structure and material of LED chips are important to the brightness of LED chips.
- the present invention improves the drawbacks in the prior art and provides a package structure of LED module and the method for manufacturing the same.
- the method mainly comprises steps of providing a light-emitting module; disposing a light-pervious member on the light-emitting path of the light-emitting module; and dripping a colloid member on the light-pervious member.
- the light-pervious member is a transparent structure; and the colloid member forms a transparent structure with a thick center and a thin periphery using the surface tension of colloid material.
- An objective of the present invention is to provide a package structure of LED module and the method for manufacturing the same.
- the light-pervious member and colloid member are used for reducing the total reflection effect in the package.
- the present invention provides a package structure of LED module and the method for manufacturing the same.
- the method mainly comprises steps of providing a light-emitting module; disposing a light-pervious member on the light-emitting path of the light-emitting module; and dripping a colloid member on the light-pervious member.
- the light-pervious member is a transparent structure; and the colloid member forms a transparent structure with a thick center and a thin periphery using the surface tension of colloid material.
- FIG. 1 shows a three-dimensional view of the package structure of LED module according the first embodiment of the present invention
- FIG. 2 shows a flowchart for manufacturing the package structure of LED module according the first embodiment of the present invention
- FIG. 3 shows a cross-sectional view of the package structure of LED module according the first embodiment of the present invention
- FIG. 4 shows a cross-sectional view of the package structure of LED module according the second embodiment of the present invention.
- FIG. 5 shows a three-dimensional view of the package structure of LED module according the third embodiment of the present invention.
- FIG. 6 shows a flowchart for manufacturing the package structure of LED module according the third embodiment of the present invention.
- FIG. 7 shows a cross-sectional view of the package structure of LED module according the third embodiment of the present invention.
- FIG. 8 shows a cross-sectional view of the package structure of LED module according the fourth embodiment of the present invention.
- the package structure of LED module and the method for manufacturing the same according to the present invention solve the problem of larger refractivity in a general LED module than outside.
- most of the light generate by the LED module is totally reflected back to the inside of the LED module from the interface between the package structure and the LED module.
- the totally reflected light is absorbed by the internal electrodes and substrate.
- the light extraction efficiency of the LED chip is far lower than the internal quantum efficiency.
- the present invention improves the drawbacks in the light emitting efficiency of the LED module according to the prior art.
- the light-pervious member and the colloid member the total reflection effect in the package can be reduced.
- the structure according to the present invention is endowed with nonobviousness and novelty.
- FIG. 1 shows a three-dimensional view of the package structure of LED module according the first embodiment of the present invention.
- the present invention uses a chip fixing member 10 , a light-pervious member 20 , a colloid member 30 , and at least an LED chip 40 .
- the chip fixing member 10 further includes a recess 110 , a first electrode 120 , and a second electrode 130 .
- the LED chip 40 includes a first electrical connecting wire 410 and a second electrical connecting wire 420 .
- the present invention includes the fundamental structure described above.
- FIG. 2 shows a flowchart for manufacturing the package structure of LED module according the first embodiment of the present invention.
- the chip fixing member 10 provided.
- the chip fixing member 10 includes the recess 110 .
- the first and second electrodes 120 , 130 are disposed on the sidewalls of the recess 110 on both sides.
- the at least one LED chip 40 is disposed in the recess 110 of the chip fixing member 10 .
- the LED chip 40 has said first and second electrical connecting wires 410 , 420 .
- the first electrical connecting wire 410 is connected to the first electrode 120 and the second electrical connecting wire 420 is connected to the second electrode 130 for forming electrical circuitry.
- the light-pervious member 20 is disposed on the recess 110 and thus covering the recess 110 .
- the LED chip 40 is sealed in the recess 110 by using the chip fixing member 10 and the light-pervious member 20 .
- the recess 110 is filled with air, transparent colloid material, or fluorescent powder for forming a light-emitting module 50 .
- the light-emitting module 50 uses the first and second electrodes 120 , 130 for connecting electrically the internal and external circuits.
- a colloid material is disposed on the light-pervious member 20 by dripping for forming a colloid member 30 .
- the colloid member 30 is a transparent colloid material. Due to the surface tension of the colloid material, the structure has a thick center and a thin periphery, enabling the lens effect. Besides, the surface of the colloid member 30 is curved.
- the present invention forms the light-emitting module 50 by using the chip fixing member 10 , the light-pervious member 20 , and the LED chip 40 .
- the chip fixing member 10 , the light-pervious member 20 , and the colloid member 30 are all transparent structures.
- the chip fixing member 10 and the light-pervious member 20 can be glass or transparent ceramics.
- the colloid member 30 is made of silica gel materials, silica gel composite materials, epoxy resin, or epoxy resin composite materials.
- the total reflection effect in the package structure of the light-emitting module 50 can be reduced. Furthermore, the structure formed by dripping of the colloid member 30 can be used.
- the colloid member 30 has a thick center and a thin periphery, forming a curved surface and enabling a convex lens effect. Consequently, the light of the LED chip 40 can be concentrated by passing through the colloid member 30 .
- FIG. 3 and FIG. 4 show cross-sectional views of the package structure of LED module according the first and second embodiments of the present invention.
- the embodiment of the colloid member 30 according to the present invention is disclosed.
- the colloid member 30 is disposed on one side of the light-emitting module 50 .
- the colloid member 30 is dripped on the light-pervious member 20 .
- the chip fixing member 10 is a transparent structure.
- At least one colloid member 30 is dripped on one side of the light-emitting module 50 , as shown in FIG. 3 .
- the colloid member 30 is dripped surrounding the light-emitting module 50 , as shown in FIG. 4 , so that the light-emitting paths of the LED chip 40 inside the light-emitting module 50 are all surrounded by the colloid member 30 .
- the light emitted by the LED chip 40 will pass through the colloid member 30 , which is a structure formed integrally.
- a plurality of LED chips 40 can be disposed in the recess 110 .
- the fluorescent powder 60 (not shown in the figures) can be filled inside the recess 110 for covering the light-emitting paths of the LED chips 40 . Consequently, the LED chip 40 can be adjusted for emitting the required color of light.
- FIG. 5 and FIG. 6 show a three-dimensional view of and a flowchart for manufacturing the package structure of LED module according the third embodiment of the present invention.
- the third embodiment of the present invention changes the structure and method according to the first embodiment.
- a chip fixing member 11 provided.
- the chip fixing member 11 includes a plane 140 .
- a first electrode 121 and a second electrode 131 are disposed on the sides of the plane 140 .
- at least one LED chip 40 is disposed on the plane 140 .
- the LED chip 40 has a first electrical connecting wire 410 and a second electrical connecting wire 420 .
- the first electrical connecting wire 410 is connected to the first electrode 121 and the second electrical connecting wire 420 is connected to the second electrode 131 for forming electrical circuitry.
- a sealing colloid 70 is a transparent colloid material.
- a light-pervious member 20 is disposed on the sealing colloid 70 .
- the chip fixing member, the LED chip 40 , the sealing colloid 70 , and the light-pervious member 20 are used for forming a light-emitting module 51 .
- the light-emitting module 51 uses the first and second electrodes 121 , 131 for connecting electrically the internal and external circuits of the sealing colloid 70 .
- a colloid material is disposed on the light-pervious member 20 by dripping for forming at least a colloid member 30 .
- the colloid member 30 is a transparent colloid material. Due to the surface tension of the colloid material, the structure has a thick center and a thin periphery, enabling the lens effect. Besides, the surface of the colloid member 30 is curved.
- FIG. 7 and FIG. 8 show cross-sectional views of the package structure of LED module according the third and fourth embodiments of the present invention.
- the third and fourth embodiments of the present invention are shown.
- the third and fourth embodiments are the same as the first and second embodiments. The difference is only on the structure of the light-emitting module 51 .
- the chip fixing member 11 is also a transparent structure. Hence, the details will not be described again.
- both of the third and fourth embodiments include a plurality of LED chips 40 on the plane 140 .
- the light-emitting module 51 is thus formed by the chip fixing member 11 , the light-pervious member 20 , the sealing colloid 70 , and the plurality of LED chips 40 .
- the chip fixing member 11 , the light-pervious member 20 , and the colloid member 30 are all transparent structures.
- the chip fixing member 11 and the light-pervious member 20 can be glass or transparent ceramics.
- the sealing colloid 70 and the colloid member 30 are silica gel materials, silica gel composite materials, epoxy resin, or epoxy resin composite materials.
- the fluorescent powder 60 (not shown in the figures) can cover the light-emitting paths of the plurality of LED chips 40 . Consequently, the plurality of LED chip 40 can be adjusted for emitting the required color of light.
- the present invention provides a package structure of LED module and the method for manufacturing the same.
- the present invention mainly provides the chip fixing member 10 having the recess 110 .
- At least an LED chip 40 is disposed in the recess 110 .
- the light-pervious member 20 which is a transparent structure, covers the recess 110 .
- At least a colloid member 30 is dripped on the light-pervious member 20 .
- the colloid member 30 is a transparent structure having a thick center and a thin periphery.
- the chip fixing member 11 is used as well.
- the chip fixing member 11 has the plane 140 .
- At least an LED chip 40 is disposed on the plane 40 .
- the sealing colloid 70 is further disposed for covering the LED chip 40 .
- the light-pervious member 20 is disposed on the sealing colloid 70 and is a transparent structure.
- the colloid member 30 is a transparent structure having a thick center and a thin periphery.
- the chip fixing members 10 , 11 are transparent structures.
- At least a colloid member 30 is dripped on one side of the light-emitting modules 50 , 51 .
- the colloid member 30 can cover the light-emitting paths of the light-emitting modules 50 , 51 completely.
- the light-pervious member 20 and the colloid member 30 are disposed on the light-emitting paths of the light-emitting modules 50 . 51 for reducing the total reflection in the package.
- the present invention is endowed with nonobviousness and novelty.
- the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility.
- the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape. structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention.
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Abstract
Description
- The present invention relates generally to a structure for reducing total reflection of light-emitting diode chips, and particularly to a package structure of light-emitting diode module and the method for manufacturing the same.
- In the trend of energy shortage, energy conservation and carbon reduction have become the guidelines for everyone's living. Various manufacturing technologies using advanced technologies appear. Many industrial products and electronic products are invented, facilitating people's living significantly. Limit-emitting diodes (LEDs) have a special light-emitting mechanism and the advantages of environmental protection and energy conservation. Their applications are developing prosperously, including backlight plates of LCD, large signboards, headlights, and lighting applications. In Taiwan, early involvement was in die and wafer fabrication. At present. the LED industry has established a delicate division of the supply chain. In addition, the domestic LED companies all endeavor in improving their capabilities in research and development for expanding to high value-added markets. A part of the innovation is related to the package material and structure of LEDs.
- Many industrial and electronic products are demanding increasingly in technologies. This is the case for LEDs particularly. These semiconductor devices are usually used as indicators or displays. They can convert electrical energy to photo energy directly with high efficiency. They also long usage hours as long as several tens to hundreds of thousands of hours. Moreover, in comparison with traditional bulbs, they also have the advantages of breakage resistance and saving power. Nonetheless, they all need a reasonable package form for various types before they are adopted in practical applications.
- The package form of LED depends on the application scenario, the appearance, the size, the heat dissipation solution, and the light emitting effect. There are many types in the package forms of LED. Currently, according to the package forms, LED chips are categorized into Lamp-LED, TOP-LED, Side-LED, SMD-LED, Flip Chip-LED, and High-Power-LED.
- In general, the overall light-emitting performance is influenced by the LED chip, the package form, and the package material. As the epitaxy technology progresses, the internal light-emitting efficiency of LED chip has reached above 90%. Nonetheless, owing to the influences of package structure and material, the equivalent light-emitting efficiency cannot be reached from the outside of LED modules. Thereby, the package structure and material of LED chips are important to the brightness of LED chips.
- Accordingly, the present invention improves the drawbacks in the prior art and provides a package structure of LED module and the method for manufacturing the same. The method mainly comprises steps of providing a light-emitting module; disposing a light-pervious member on the light-emitting path of the light-emitting module; and dripping a colloid member on the light-pervious member. The light-pervious member is a transparent structure; and the colloid member forms a transparent structure with a thick center and a thin periphery using the surface tension of colloid material. By using the transparent structure of the light-pervious member and the colloid member described above, the total reflection effect in the package is reduced. Hence, the structure according to the present invention is endowed with nonobviousness and novelty.
- An objective of the present invention is to provide a package structure of LED module and the method for manufacturing the same. The light-pervious member and colloid member are used for reducing the total reflection effect in the package.
- In order to achieve the objective and efficacy described above, the present invention provides a package structure of LED module and the method for manufacturing the same. The method mainly comprises steps of providing a light-emitting module; disposing a light-pervious member on the light-emitting path of the light-emitting module; and dripping a colloid member on the light-pervious member. The light-pervious member is a transparent structure; and the colloid member forms a transparent structure with a thick center and a thin periphery using the surface tension of colloid material.
-
FIG. 1 shows a three-dimensional view of the package structure of LED module according the first embodiment of the present invention; -
FIG. 2 shows a flowchart for manufacturing the package structure of LED module according the first embodiment of the present invention; -
FIG. 3 shows a cross-sectional view of the package structure of LED module according the first embodiment of the present invention; -
FIG. 4 shows a cross-sectional view of the package structure of LED module according the second embodiment of the present invention; -
FIG. 5 shows a three-dimensional view of the package structure of LED module according the third embodiment of the present invention; -
FIG. 6 shows a flowchart for manufacturing the package structure of LED module according the third embodiment of the present invention; -
FIG. 7 shows a cross-sectional view of the package structure of LED module according the third embodiment of the present invention; and -
FIG. 8 shows a cross-sectional view of the package structure of LED module according the fourth embodiment of the present invention. - In order to make the structure and characteristics as well as the effectiveness of the present invention to be further understood and recognized, the detailed description of the present invention is provided as follows along with embodiments and accompanying figures.
- The package structure of LED module and the method for manufacturing the same according to the present invention solve the problem of larger refractivity in a general LED module than outside. In other words, most of the light generate by the LED module is totally reflected back to the inside of the LED module from the interface between the package structure and the LED module. The totally reflected light is absorbed by the internal electrodes and substrate. Thereby, the light extraction efficiency of the LED chip is far lower than the internal quantum efficiency. The present invention improves the drawbacks in the light emitting efficiency of the LED module according to the prior art. By using the light-pervious member and the colloid member, the total reflection effect in the package can be reduced. Hence, the structure according to the present invention is endowed with nonobviousness and novelty.
- Please refer to
FIG. 1 , which shows a three-dimensional view of the package structure of LED module according the first embodiment of the present invention. As shown in the figure, the present invention uses achip fixing member 10, a light-pervious member 20, acolloid member 30, and at least anLED chip 40. Thechip fixing member 10 further includes arecess 110, afirst electrode 120, and asecond electrode 130. TheLED chip 40 includes a firstelectrical connecting wire 410 and a secondelectrical connecting wire 420. The present invention includes the fundamental structure described above. - Please refer to
FIG. 2 , which shows a flowchart for manufacturing the package structure of LED module according the first embodiment of the present invention. As shown in the figure, in the step S100, first, thechip fixing member 10 provided. Thechip fixing member 10 includes therecess 110. The first andsecond electrodes recess 110 on both sides. Next, in the step S200, the at least oneLED chip 40 is disposed in therecess 110 of thechip fixing member 10. TheLED chip 40 has said first and second electrical connectingwires wire 410 is connected to thefirst electrode 120 and the second electrical connectingwire 420 is connected to thesecond electrode 130 for forming electrical circuitry. Then, in the step S300, the light-pervious member 20 is disposed on therecess 110 and thus covering therecess 110. Afterwards, in the step S400, theLED chip 40 is sealed in therecess 110 by using thechip fixing member 10 and the light-pervious member 20. Therecess 110 is filled with air, transparent colloid material, or fluorescent powder for forming a light-emittingmodule 50. The light-emittingmodule 50 uses the first andsecond electrodes pervious member 20 by dripping for forming acolloid member 30. Thecolloid member 30 is a transparent colloid material. Due to the surface tension of the colloid material, the structure has a thick center and a thin periphery, enabling the lens effect. Besides, the surface of thecolloid member 30 is curved. - The present invention forms the light-emitting
module 50 by using thechip fixing member 10, the light-pervious member 20, and theLED chip 40. Thechip fixing member 10, the light-pervious member 20, and thecolloid member 30 are all transparent structures. Thechip fixing member 10 and the light-pervious member 20 can be glass or transparent ceramics. Thecolloid member 30 is made of silica gel materials, silica gel composite materials, epoxy resin, or epoxy resin composite materials. Thereby, the light emitted from theLED chip 40 inside the light-emittingmodule 50 will not be limited by the package structure of the light-emittingmodule 50. The light of theLED chip 40 passes through the light-emittingmodule 50 and emits outwards. By using the above method, the total reflection effect in the package structure of the light-emittingmodule 50 can be reduced. Furthermore, the structure formed by dripping of thecolloid member 30 can be used. Thecolloid member 30 has a thick center and a thin periphery, forming a curved surface and enabling a convex lens effect. Consequently, the light of theLED chip 40 can be concentrated by passing through thecolloid member 30. - Please refer to
FIG. 3 andFIG. 4 , which show cross-sectional views of the package structure of LED module according the first and second embodiments of the present invention. As shown in the figures, the embodiment of thecolloid member 30 according to the present invention is disclosed. Thecolloid member 30 is disposed on one side of the light-emittingmodule 50. According to the first embodiment, as shown inFIG. 3 , thecolloid member 30 is dripped on the light-pervious member 20. When the light of theLED chip 40 passes through the light-pervious member 20 and thecolloid member 30, there will be no total reflection. Thereby, the light-emitting efficiency inside the light-emittingmodule 50 approaches that of outside. In addition, according to the second embodiment, thechip fixing member 10 is a transparent structure. At least onecolloid member 30 is dripped on one side of the light-emittingmodule 50, as shown inFIG. 3 . Alternatively, thecolloid member 30 is dripped surrounding the light-emittingmodule 50, as shown inFIG. 4 , so that the light-emitting paths of theLED chip 40 inside the light-emittingmodule 50 are all surrounded by thecolloid member 30. The light emitted by theLED chip 40 will pass through thecolloid member 30, which is a structure formed integrally. Furthermore, according to both of the two embodiments described above, a plurality ofLED chips 40 can be disposed in therecess 110. Besides, the fluorescent powder 60 (not shown in the figures) can be filled inside therecess 110 for covering the light-emitting paths of the LED chips 40. Consequently, theLED chip 40 can be adjusted for emitting the required color of light. - Please refer to
FIG. 5 andFIG. 6 , which show a three-dimensional view of and a flowchart for manufacturing the package structure of LED module according the third embodiment of the present invention. As shown in the figures, the third embodiment of the present invention changes the structure and method according to the first embodiment. In the step S101, achip fixing member 11 provided. Thechip fixing member 11 includes aplane 140. Afirst electrode 121 and asecond electrode 131 are disposed on the sides of theplane 140. Next, in the step S201, at least oneLED chip 40 is disposed on theplane 140. TheLED chip 40 has a first electrical connectingwire 410 and a second electrical connectingwire 420. The first electrical connectingwire 410 is connected to thefirst electrode 121 and the second electrical connectingwire 420 is connected to thesecond electrode 131 for forming electrical circuitry. Then, in the step S301, use a sealingcolloid 70 to cover theLED chip 40. The sealingcolloid 70 is a transparent colloid material. Afterwards, in the step S401, a light-pervious member 20 is disposed on the sealingcolloid 70. Finally, in the step S501, the chip fixing member, theLED chip 40, the sealingcolloid 70, and the light-pervious member 20 are used for forming a light-emittingmodule 51. The light-emittingmodule 51 uses the first andsecond electrodes colloid 70. In addition, a colloid material is disposed on the light-pervious member 20 by dripping for forming at least acolloid member 30. Thecolloid member 30 is a transparent colloid material. Due to the surface tension of the colloid material, the structure has a thick center and a thin periphery, enabling the lens effect. Besides, the surface of thecolloid member 30 is curved. - Please refer to
FIG. 7 andFIG. 8 , which show cross-sectional views of the package structure of LED module according the third and fourth embodiments of the present invention. As shown in the figures, the third and fourth embodiments of the present invention are shown. The third and fourth embodiments are the same as the first and second embodiments. The difference is only on the structure of the light-emittingmodule 51. In the second embodiment, thechip fixing member 11 is also a transparent structure. Hence, the details will not be described again. Furthermore, both of the third and fourth embodiments include a plurality ofLED chips 40 on theplane 140. The light-emittingmodule 51 is thus formed by thechip fixing member 11, the light-pervious member 20, the sealingcolloid 70, and the plurality ofLED chips 40. Thechip fixing member 11, the light-pervious member 20, and thecolloid member 30 are all transparent structures. Thechip fixing member 11 and the light-pervious member 20 can be glass or transparent ceramics. The sealingcolloid 70 and thecolloid member 30 are silica gel materials, silica gel composite materials, epoxy resin, or epoxy resin composite materials. Besides, the fluorescent powder 60 (not shown in the figures) can cover the light-emitting paths of the plurality ofLED chips 40. Consequently, the plurality ofLED chip 40 can be adjusted for emitting the required color of light. - To sum up, the present invention provides a package structure of LED module and the method for manufacturing the same. The present invention mainly provides the
chip fixing member 10 having therecess 110. At least anLED chip 40 is disposed in therecess 110. Then the light-pervious member 20, which is a transparent structure, covers therecess 110. At least acolloid member 30 is dripped on the light-pervious member 20. Thecolloid member 30 is a transparent structure having a thick center and a thin periphery. In addition, thechip fixing member 11 is used as well. Thechip fixing member 11 has theplane 140. At least anLED chip 40 is disposed on theplane 40. The sealingcolloid 70 is further disposed for covering theLED chip 40. Next, the light-pervious member 20 is disposed on the sealingcolloid 70 and is a transparent structure. Thecolloid member 30 is a transparent structure having a thick center and a thin periphery. Furthermore, thechip fixing members colloid member 30 is dripped on one side of the light-emittingmodules colloid member 30 can cover the light-emitting paths of the light-emittingmodules pervious member 20 and thecolloid member 30 are disposed on the light-emitting paths of the light-emittingmodules 50. 51 for reducing the total reflection in the package. Hence, the present invention is endowed with nonobviousness and novelty. - Accordingly, the present invention conforms to the legal requirements owing to its novelty, nonobviousness, and utility. However, the foregoing description is only embodiments of the present invention, not used to limit the scope and range of the present invention. Those equivalent changes or modifications made according to the shape. structure, feature, or spirit described in the claims of the present invention are included in the appended claims of the present invention.
Claims (13)
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Cited By (3)
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USD788083S1 (en) * | 2015-09-20 | 2017-05-30 | Airgain Incorporated | Antenna |
CN108258108A (en) * | 2016-12-27 | 2018-07-06 | 佛山市国星光电股份有限公司 | The LED support and its manufacturing method of a kind of high contrast, LED component and LED display |
CN112054109A (en) * | 2020-09-11 | 2020-12-08 | 天津中环电子照明科技有限公司 | Ultraviolet LED packaging adhesive with high light extraction efficiency and light aging resistance and packaging structure |
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US9502612B2 (en) * | 2009-09-20 | 2016-11-22 | Viagan Ltd. | Light emitting diode package with enhanced heat conduction |
CN102683514B (en) * | 2011-03-06 | 2017-07-14 | 维亚甘有限公司 | LED package and manufacture method |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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USD788083S1 (en) * | 2015-09-20 | 2017-05-30 | Airgain Incorporated | Antenna |
CN108258108A (en) * | 2016-12-27 | 2018-07-06 | 佛山市国星光电股份有限公司 | The LED support and its manufacturing method of a kind of high contrast, LED component and LED display |
CN112054109A (en) * | 2020-09-11 | 2020-12-08 | 天津中环电子照明科技有限公司 | Ultraviolet LED packaging adhesive with high light extraction efficiency and light aging resistance and packaging structure |
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