KR20110061421A - Light emitting diode package and liquid crystal display device having thereof - Google Patents

Light emitting diode package and liquid crystal display device having thereof Download PDF

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Publication number
KR20110061421A
KR20110061421A KR1020090118066A KR20090118066A KR20110061421A KR 20110061421 A KR20110061421 A KR 20110061421A KR 1020090118066 A KR1020090118066 A KR 1020090118066A KR 20090118066 A KR20090118066 A KR 20090118066A KR 20110061421 A KR20110061421 A KR 20110061421A
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South Korea
Prior art keywords
light emitting
emitting diode
resin
electrode structure
packaging part
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KR1020090118066A
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Korean (ko)
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황성진
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엘지디스플레이 주식회사
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Priority to KR1020090118066A priority Critical patent/KR20110061421A/en
Publication of KR20110061421A publication Critical patent/KR20110061421A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting diode package and liquid crystal display device with the same are provided to add a resin packaging unit of high refractivity between a light emitting diode chip and an external packaging unit, thereby increasing the optical efficiency of a light emitting diode chip. CONSTITUTION: A package substrate has a first electrode structure(153a) and a second electrode structure. A light emitting diode chip is mounted on the package substrate so that the light emitting diode is electrically connected between first and second electrode structures. A second resin packing unit(157b) of high refractivity is formed of a transparent resin sealing the light emitting diode chip. A transparent first resin packaging unit is applied on the second resin packing unit. Fluorescent powder(158) is dispersed in the first resin packaging unit.

Description

LIGHT EMITTING DIODE PACKAGE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THEREOF}

The present invention relates to a light emitting diode package and a liquid crystal display device having the same, and more particularly, to a light emitting diode package for supplying light to a liquid crystal display panel using a plurality of light emitting diodes (LEDs). It relates to a liquid crystal display device.

In general, light emitting diodes have excellent monochromatic peak wavelength, have excellent light efficiency, and can be miniaturized, and thus are widely used as various display devices and light sources. The conventional light emitting diode package has a structure having a form of protecting the light emitting diode with a transparent resin package.

Currently, LED packages mainly used for backlight units, lighting, outdoor billboards of flat panel displays (FPDs), such as liquid crystal displays (LCD), are basically low power consumption, The consumption is increasing for reasons of environment.

In particular, a light emitting diode package used as a backlight unit of a liquid crystal display device has a high efficiency and low power consumption characteristics, and a backlight unit is manufactured using a small number of light emitting diode packages to lower costs.

However, there is a limit to reducing the number of light emitting diode packages used in the backlight unit due to the limited amount of light of the light emitting diode package. To improve this, the structure of the light emitting diode package may be changed or a high performance light emitting diode chip may be used to The amount of light is increasing.

1 is a cross-sectional view schematically illustrating a structure of a general light emitting diode package.

As shown in the drawing, the general LED package 50 includes package substrates 51a and 51b on which the LED chip 52 is mounted.

In this case, the light emitting diode chip 52 includes a light emitting diode 52b and a submount substrate 52a to which the light emitting diode 52b is flip chip bonded.

In addition, the package substrates 51a and 51b include a lower package substrate 51a having a first electrode structure 53a and a second electrode structure 53b and an upper package substrate 51b provided with a cavity. .

The positive electrode (not shown) of the LED chip 52 may be connected to the first electrode structure 53a and the second electrode structure 53b by wires 54, respectively. In the cavity provided in the upper package substrate 51b, a resin package 57 is formed to surround the light emitting diode chip 52.

At this time, the resin packaging 57 includes a plurality of phosphor particles 58 and transparent spherical particles 59 dispersed therein.

The transparent spherical particles 59 have a refractive index higher than that of the surrounding resin packaging portion 57. In this case, the transparent spherical particles 59 having a relatively high refractive index may act as an optical means for controlling the light path to be directed upward by focusing light.

As described above, according to the related art, by dispersing transparent spherical particles 59 having a higher refractive index than the surrounding resin as a new optical means in the resin packaging part 57, the light emitted from the light emitting diode chip 52 is directed to a desired upper direction. Can be focused more toward you.

However, light extraction efficiency may vary depending on the degree of dispersion of the transparent spherical particles 59, and as shown, the transparent spherical particles 59 are dispersed together with the phosphor particles 58 and the transparent spherical particles 59 are separated. The light focused in the upper direction can be dispersed again in the other direction by the phosphor particles 58, so that the light extraction effect by the transparent spherical particles 59 can be seen as extremely insignificant.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a light emitting diode package and a method of manufacturing the same, which are free from problems caused by environmental regulations of cold cathode fluorescent lamps.

Another object of the present invention is to provide a light emitting diode package and a method for manufacturing the same, which reduce light loss due to total internal reflection and reflection of light emitted from the light emitting diode chip.

Another object of the present invention is to provide a liquid crystal display device having the light emitting diode package.

Further objects and features of the present invention will be described in the configuration and claims of the invention which will be described later.

In order to achieve the above object, the LED package of the present invention comprises a package substrate having a first electrode structure and a second electrode structure; A light emitting diode chip mounted on the package substrate to be electrically connected to the first electrode structure and the second electrode structure; A second refractive index packaging part formed of a transparent resin sealing the light emitting diode chip; A transparent first resin packing part coated on the second resin packing part; And a phosphor powder dispersed in the first resin packaging part.

Another light emitting diode package of the present invention includes a package substrate having a first electrode structure and a second electrode structure; A light emitting diode chip mounted on the package substrate to be electrically connected to the first electrode structure and the second electrode structure; A second refractive index packaging part formed of a transparent resin sealing the light emitting diode chip; Phosphor powder dispersed in the first resin packaging part; And a transparent first resin packing part coated on the second resin packing part.

A method of manufacturing a light emitting diode package according to the present invention includes forming an upper package substrate having a cavity and a lower package substrate having a first electrode structure and a second electrode structure formed thereon; Mounting a light emitting diode chip on an upper surface of the first electrode structure in the upper package substrate provided with the cavity; Forming a second resin packaging part having a high refractive index of 1.45 to 2.2 formed of a transparent resin sealing the light emitting diode chip in a cavity provided in the upper package substrate; And applying a transparent first resin package on the second resin package.

A liquid crystal display device having a light emitting diode package according to the present invention includes a liquid crystal display panel; And a light emitting diode chip configured to supply light to the liquid crystal display panel, the package substrate having a first electrode structure and a second electrode structure, and to be electrically connected to the first electrode structure and the second electrode structure. A second resin packaging part having a high refractive index of 1.45 to 2.2 formed of a transparent resin for sealing the light emitting diode chip, a transparent first resin packaging part applied on the second resin packaging part, and dispersed in the first resin packaging part It includes a plurality of light emitting diode package made of phosphor powder.

As described above, the light emitting diode package and the liquid crystal display device having the same according to the present invention do not have the problems caused by environmental regulations such as in the cold cathode fluorescent lamps, and thus have an advantage that they can cope with environmental regulations that are gradually strengthened.

In addition, the light emitting diode package and the liquid crystal display device having the same according to the present invention is a total internal reflection of the light generated from the light emitting diode chip by adding a high refractive index resin packaging of about 1.45 ~ 2.2 between the light emitting diode chip and the outer packaging portion; By reducing the light loss due to reflection provides an effect of improving the light efficiency of the LED chip. As a result, a light source having the same performance as that of the conventional LED can be manufactured using a small number of light emitting diode chips, thereby providing a very advantageous advantage in terms of cost and power consumption.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of a light emitting diode package and a liquid crystal display device having the same according to the present invention.

FIG. 2 is a cross-sectional view schematically illustrating a structure of a liquid crystal display according to the present invention. In the drawings, a direct type LED backlight structure in which an LED package is formed in an array form is shown below.

However, the present invention is not limited to the direct type LED backlight structure, and the present invention is also applicable to the side type LED backlight structure in which the LED package is installed on the side of the LCD panel.

As shown in the drawing, the liquid crystal display device 100 according to the present invention includes a backlight (composed of a liquid crystal display panel 101 and a plurality of light emitting diode packages 150 for supplying light to the liquid crystal display panel 101). 140).

The liquid crystal display panel 101 includes a first substrate 110 and a second substrate 105, such as glass, and a liquid crystal layer (not shown) formed therebetween, wherein the first substrate 110 is a thin film transistor. And a thin film transistor substrate on which a pixel electrode is formed, and the second substrate 105 is a color filter substrate on which a color filter layer is formed.

In addition, a driving circuit unit 120 is provided at a side surface of the first substrate 110 to apply a signal to each of the thin film transistor and the pixel electrode formed on the first substrate 110.

In this case, although not shown in the drawing, a plurality of gate lines and data lines defining a plurality of pixel regions are vertically and horizontally arranged on the first substrate 110, and thin film transistors are provided in each pixel region to form the gate lines. Therefore, it is driven as a scan signal is applied from the outside. In addition, pixel electrodes are formed in the pixel regions, and as the thin film transistors are driven, image signals are input from the outside along the data lines.

In addition, the second substrate 105 is formed with a black matrix to block the transmission of light to the image non-display area and a color filter layer for real color. The first substrate 110 and the second substrate are configured as described above. The liquid crystal layer is formed between the substrates 105.

3 is a cross-sectional view schematically illustrating a structure of a light emitting diode package according to a first embodiment of the present invention.

As shown in the figure, the LED package 150 according to the first embodiment of the present invention is a package substrate (151a, 151b) having a first electrode structure (153a) and a second electrode structure (153b), LED chip 152 mounted on the package substrates 151a and 151b so as to be electrically connected to the first electrode structure 153a and the second electrode structure 153b, and the transparent sealing portion of the light emitting diode chip 152. Phosphor dispersed in the high refractive index second resin packaging part 157b formed of the resin, the transparent first resin packaging part 157a and the first resin packaging part 157a applied on the second resin packaging part 157b. Powder 158.

In this case, the light emitting diode chip 152 includes a light emitting diode 152b and a submount substrate 152a in which the light emitting diode 152b is flip chip bonded.

In addition, the package substrates 151a and 151b include an upper package substrate 151b provided with a cavity and a lower package substrate 151a on which the first electrode structure 153a and the second electrode structure 153b are formed.

In this case, the first electrode structure 153a and the second electrode structure 153b are shown only on the upper surface of the lower package substrate 151a, but as will be apparent to those skilled in the art, electrode pads and via holes on the lower surface for external connection of the package. It may be a structure connected through a via hole or the like.

The positive electrode (not shown) of the LED chip 152 may be connected to the first electrode structure 153a and the second electrode structure 153b by wires 154, respectively. The first resin packaging part 157a is formed in the cavity provided in the upper package substrate 151b to surround the light emitting diode chip 152, and the first resin packaging part 157a includes a silicone resin and an epoxy. It may consist of a transparent resin such as a resin or a mixture thereof.

As described above, the first resin packaging part 157a includes a plurality of phosphor powders 158 dispersed therein. The phosphor powder 158 converts the wavelength light of the light emitting diode into other wavelength light, and may be mainly used to obtain white light.

In this case, for example, the light emitting diode 152b according to the first embodiment of the present invention may be formed of a blue light emitting element, and the phosphor powder 158 may be formed of a yellow phosphor or a mixture of a green phosphor and a red phosphor. It can consist of a layer. In this case, as the light is incident into the first resin packaging part 157a, the phosphor powder 158 may emit yellow, red, and green light, and the yellow, red, and green light emit the blue light. White light is output by mixing with blue light emitted from the device.

Here, the LED package 150 according to the first embodiment of the present invention is the LED chip 152 in order to reduce the light loss due to the total internal reflection and reflection of the light emitted from the LED chip 152. And a second resin packaging portion 157b having a high refractive index of about 1.45 to 2.2 between the first resin packaging portion 157a and the first resin packaging portion 157a. That is, the second resin packaging part 157b is formed of a transparent resin, such as a silicone resin, an epoxy resin, or a mixture thereof, which seals the light emitting diode chip 152, and has a refractive index of about 1.45 to 2.2. It has a higher refractive index than the first resin packaging part 157a (˜1.41) in which the phosphor powder 158 is dispersed and has a lower refractive index than the sapphire substrate (˜2.7) of the LED chip 152. .

In this case, the second resin packaging part 157b may be formed in any shape capable of sealing the light emitting diode chip 152, and may basically have an elliptic hemisphere or a hemisphere shape.

In addition, the second resin packaging part 157b according to the first embodiment of the present invention may be formed in a simple process as compared with inserting in a lens form by applying a high refractive index transparent resin in a dotting manner. Characterized in that it can.

Hereinafter, a phenomenon in which light loss due to total internal reflection and reflection of light emitted from the light emitting diode chip by the second resin packaging part according to the present invention is reduced will be described in detail with reference to the accompanying drawings.

4A and 4B are exemplary diagrams for describing light loss due to total internal reflection and reflection occurring in a light emitting diode chip.

In this case, Figure 4a is an exemplary view for explaining the light loss due to internal total reflection and reflection generated in a general light emitting diode chip, Figure 4b is generated in the light emitting diode chip by the second resin packaging according to the present invention It is an exemplary view for explaining a phenomenon in which light loss due to total internal reflection and reflection is reduced.

First, as shown in the figure, the light emitting diode packages 50 and 150 largely include package substrates 51 and 151 on which the light emitting diode chips 52 and 152 are mounted.

In this case, the refractive index n2 of silicon carbide (SiC) mainly constituting the light emitting diode chips 52 and 152 is 2.7, and the first resin encapsulation part 57 may surround the light emitting diode chips 52 and 152. When the refractive index n1 of 157a is 1.41, as shown in FIG. 4A, the optical loss due to reflection occurring in the general light emitting diode chip 52 is represented by the reflectance R = {(n1-n2) / (n1 + n2)} 2 = 0.0985), indicating about 9.85%.

In contrast, as shown in FIG. 4B, when the second resin packaging part 157b having a high refractive index is added between the LED chip 152 and the first resin packaging part 157a, the LED chip 152 It can be seen that the light loss due to reflection generated in the light emitting device) is about 2.2%, the light loss due to reflection generated in the second resin packaging part 157b is about 3%, and the total light loss corresponds to about 5.2%. .

In addition, in the general light emitting diode package 50, the total internal reflection critical angle (sin Ic = n1 / n2) is about 31.5 °, whereas in the light emitting diode package 150 according to the present invention, the light emitting diode chip 152 is used. Is approximately 44.8 ° between the second resin packaging part 157b and about 47.8 ° between the second resin packaging part 157b and the first resin packaging part 157a, thereby increasing the total internal reflection critical angle, that is, reducing the total internal reflection. It can be seen that.

5 is a table showing the total internal reflection critical angle according to the refractive index of the second resin packaging, wherein the second resin when a high refractive index second resin packaging of 1.6 to 2.4 is added between the LED chip and the first resin packaging. The total internal reflection critical angle according to the refractive index of the packaging part is shown.

As shown in the figure, in all cases where the second resin packaging part having a high refractive index n3 was added between the light emitting diode chip and the first resin packaging part, the total reflection critical angle was increased, and thus the total internal reflection was reduced. Able to know.

Specifically, when the refractive index (n3) of the second resin packaging part is 1.6, 1.8, 2.0, 2.2 and 2.4, the total reflection critical angles between the light emitting diode chip and the second resin packaging part are 36.3, 41.8, 47.8, 54.6 and 36, respectively. It can be seen that the total reflection critical angles between the second resin packaging portion and the first resin packaging portion are 61.8, 51.6, 44.8, 39.9 and 62.7 degrees, respectively.

FIG. 6 is a table showing reflectance according to the refractive index of the second resin packaging part, wherein the second resin packaging part when the second resin packaging part having a high refractive index of 1.6 to 2.4 is added between the LED chip and the first resin packaging part. The reflectance according to the refractive index is shown.

As shown in the figure, it can be seen that the total reflectance decreased in all cases in which the second resin packaging part having a high refractive index n3 was added between the light emitting diode chip and the first resin packaging part. When the negative refractive index (n3) is 2.0, the total reflectance is 5.2%, which is about 4.6% less than before.

Specifically, when the refractive index (n3) of the second resin packaging portion is 1.6, 1.8, 2.0, 2.2 and 2.4, the reflectance between the LED chip and the second resin packaging portion is 6.54, 4, 2.2, 1 and 0.3%, respectively. It can be seen that the reflectance between the second resin packaging portion and the first resin packaging portion is 0.4, 1.5, 3, 4.8 and 6.8%, respectively. Accordingly, the total reflectance is 6.94, 5.5, 5.2, 5.8, and 7.1%, respectively, when the refractive index (n3) of the second resin packaging part is 1.6, 1.8, 2.0, 2.2, and 2.4, respectively.

FIG. 7 is a table illustrating a change in luminous flux according to the refractive index of the second resin packaging part in the LED package according to the first embodiment of the present invention illustrated in FIG. 3. The change of the luminous flux according to the refractive index of the said 2nd resin packaging part when the 2nd resin packaging part of 1.6-2.2 high refractive index is added between resin packaging parts is shown.

As shown in the figure, when the second resin packaging part having a high refractive index n3 of 1.6 to 2.2 is added between the light emitting diode chip and the first resin packaging part, the luminous flux is lower than that of the comparative example (˜8.42 lm). It can be seen that the light flux is increased in all, and thus the light efficiency is increased.

In this case, the luminous flux shows the results of color coordination Cx and Cy measured at about 0.2999 and 0.278.

Specifically, when the refractive index (n3) of the second resin packaging part is 1.6, 1.8, 2.0 and 2.2, the luminous flux increased to 9.6, 10.23, 10.36 and 10.33 lm, respectively, in particular the refractive index (n3) of the second resin packaging part In the case of 2.0, the light efficiency is increased by about 23%.

Hereinafter, a manufacturing process of the LED package according to the first embodiment of the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

8A through 8D are cross-sectional views sequentially illustrating a manufacturing process of the LED package illustrated in FIG. 3.

As shown in FIG. 8A, an upper package substrate 151b having a cavity and a lower package substrate 151a on which the first electrode structure 153a and the second electrode structure 153b are formed is formed by injection molding or the like.

In this case, the first electrode structure 153a and the second electrode structure 153b may be formed on the lower package substrate 151a by die bonding using a conductive epoxy on a lower surface thereof.

Next, as shown in FIG. 8B, the LED chip 152 is mounted on the upper surface of the first electrode structure 153a in the upper package substrate 151b having the cavity.

In this case, the light emitting diode chip 152 includes a light emitting diode 152b and a submount substrate 152a in which the light emitting diode 152b is flip chip bonded, and a positive electrode (not shown) of the light emitting diode chip 152. The wires 154 may be connected to the first electrode structure 153a and the second electrode structure 153b, respectively.

Next, as shown in FIG. 8C, the second resin packaging part 157b having a high refractive index formed of a transparent resin sealing the light emitting diode chip 152 is formed in a cavity provided in the upper package substrate 151b. do.

As described above, the second resin packaging part 157b is formed of a transparent resin, such as a silicone resin, an epoxy resin, or a mixture thereof, which seals the light emitting diode chip 152, and has a refractive index of about 1.45 to 2.2. It is characterized by.

The second resin packaging part 157b may be formed in any shape capable of sealing the light emitting diode chip 152, and may basically have an elliptic hemisphere or a hemisphere shape.

In addition, the second resin packaging part 157b according to the first embodiment of the present invention may be formed by applying a high refractive index transparent resin by a dotting method.

As shown in FIG. 8D, the transparent first resin packing part 157a is coated on the second resin packing part 157b, wherein the first resin packing part 157a is dispersed in the phosphor powder. 158 may include.

In this case, the phosphor powder 158 converts the wavelength light of the light emitting diode into other wavelength light, and may be mainly used to obtain white light.

9 is a cross-sectional view schematically illustrating a structure of a light emitting diode package according to a second embodiment of the present invention.

In this case, the light emitting diode package according to the second embodiment of the present invention emits light according to the first embodiment of the present invention except that the phosphor powder is dispersed in the second resin packing part instead of the first resin packing part. It consists of substantially the same configuration as the diode package.

As shown in the figure, the LED package 250 according to the second embodiment of the present invention is a package substrate 251a, 251b having a first electrode structure 253a and a second electrode structure 253b, The light emitting diode chip 252 mounted on the package substrates 251a and 251b to be electrically connected to the first electrode structure 253a and the second electrode structure 253b, and the transparent sealing portion of the light emitting diode chip 252. Phosphor dispersed in the high refractive index second resin packing part 257b formed of resin, the transparent first resin packing part 257a and the second resin packing part 257b applied on the second resin packing part 257b. Powder 258.

In this case, the light emitting diode chip 252 includes a light emitting diode 252b and a submount substrate 252a in which the light emitting diode 252b is flip chip bonded.

In addition, the package substrates 251a and 251b include an upper package substrate 251b provided with a cavity and a lower package substrate 251a on which the first electrode structure 253a and the second electrode structure 253b are formed.

The positive electrode (not shown) of the light emitting diode chip 252 may be connected to the first electrode structure 253a and the second electrode structure 253b by wires 254, respectively. The first resin packaging part 257a is formed in the cavity provided in the upper package substrate 251b to surround the light emitting diode chip 252, and the first resin packaging part 257a includes a silicone resin and an epoxy. It may consist of a transparent resin such as a resin or a mixture thereof.

As described above, the second resin packaging part 257b includes a plurality of phosphor powders 258 dispersed therein. The phosphor powder 258 serves to convert the wavelength light of the light emitting diode into other wavelength light, and may be mainly used to obtain white light.

Here, the LED package 250 according to the second embodiment of the present invention is the light emitting diode chip 252 in order to reduce the light loss due to the total internal reflection and reflection of the light emitted from the light emitting diode chip 252. And a second resin packing part 257b having a high refractive index of about 1.45 to 2.2 between the first resin packing part 257a and the first resin packing part 257a. That is, the second resin packaging part 257b is formed of a transparent resin, such as a silicone resin, an epoxy resin, or a mixture thereof, which seals the light emitting diode chip 252, and has a refractive index of about 1.45 to 2.2. It is done.

In this case, the second resin packaging part 257b may be formed in any shape capable of sealing the light emitting diode chip 252, and may basically have an elliptic hemisphere or a hemisphere shape.

In addition, the second resin packaging part 257b according to the second embodiment of the present invention may be formed by a simple process compared to inserting a lens in a lens form by applying a high refractive index transparent resin in a dotting manner. .

FIG. 10 is a table illustrating a change in luminous flux according to the refractive index of the second resin packaging part in the light emitting diode package according to the second embodiment of the present invention shown in FIG. 9. The change of the luminous flux according to the refractive index of the said 2nd resin packaging part at the time of adding the 2nd resin packaging part of 1.6-2.2 high refractive index to is shown.

As shown in the figure, in the case where a second resin packaging part having a high refractive index n3 of 1.6 to 2.2 is added between the LED chip and the first resin packaging part, the luminous flux is lower than that of the comparative example (˜7.77lm). It can be seen that the light flux is increased in all, and thus the light efficiency is increased.

In this case, the luminous flux shows the results of color coordination Cx and Cy measured at about 0.300 and 0.279.

Specifically, when the refractive index (n3) of the second resin packaging part is 1.6, 2.0 and 2.2, the luminous flux increased to 9.0, 9.99 and 9.95 lm, respectively, especially when the refractive index (n3) of the second resin packaging part is 2.0 It can be seen that the light efficiency has increased by about 28%.

As described above, when the refractive index of the second resin packaging part is 2.0, the light emitting diode package according to the present invention shows that the amount of light increased by about 14 to 28% compared to the conventional one. Able to know. As a result, a light source having the same performance as that of the conventional LED can be manufactured using a small number of light emitting diode chips, thereby providing a very advantageous advantage in terms of cost and power consumption.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

1 is a cross-sectional view schematically showing the structure of a typical light emitting diode package.

2 is a cross-sectional view schematically showing the structure of a liquid crystal display according to the present invention.

3 is a cross-sectional view schematically showing the structure of a light emitting diode package according to a first embodiment of the present invention.

4A and 4B are exemplary diagrams for describing light loss due to total internal reflection and reflection occurring in a light emitting diode chip;

5 is a table showing the total internal reflection critical angle according to the refractive index of the second resin packaging part.

6 is a table showing reflectance according to the refractive index of the second resin packaging part.

FIG. 7 is a table illustrating a change in luminous flux according to a refractive index of a second resin packaging part in the LED package according to the first embodiment of the present invention illustrated in FIG. 3.

8A to 8D are cross-sectional views sequentially illustrating a manufacturing process of the LED package illustrated in FIG. 3.

9 is a cross-sectional view schematically showing the structure of a light emitting diode package according to a second embodiment of the present invention.

FIG. 10 is a table illustrating a change in luminous flux according to a refractive index of a second resin packaging part in the LED package according to the second embodiment of the present invention illustrated in FIG. 9.

** Description of symbols for the main parts of the drawing **

150, 250: light emitting diode package 151a, 251a: lower package substrate

151b, 251b: upper package substrate 152,252: light emitting diode chip

152a, 252a: submount substrate 152b, 252b: light emitting diode

153a, 253a: first electrode structure 153b, 253b: second electrode structure

154,254 wire 157a, 257a first resin packaging

157b, 257b: 2nd resin packaging part 158, 258: phosphor powder

Claims (12)

A package substrate having a first electrode structure and a second electrode structure; A light emitting diode chip mounted on the package substrate to be electrically connected to the first electrode structure and the second electrode structure; A second refractive index packaging part formed of a transparent resin sealing the light emitting diode chip; A transparent first resin packing part coated on the second resin packing part; And A light emitting diode package comprising phosphor powder dispersed in the first resin packaging. The light emitting diode package of claim 1, wherein the second resin packaging part is made of a silicone resin, an epoxy resin, or a mixture thereof. The light emitting diode package of claim 1, wherein the second resin packaging part has a refractive index of 1.45 to 2.2. The light emitting diode package of claim 1, wherein the second resin packaging portion has an elliptic hemisphere, a hemisphere, and the like, which can seal the light emitting diode chip. The light emitting diode package of claim 1, wherein the second resin packaging part is coated by a dotting method. A package substrate having a first electrode structure and a second electrode structure; A light emitting diode chip mounted on the package substrate to be electrically connected to the first electrode structure and the second electrode structure; A second refractive index packaging part formed of a transparent resin sealing the light emitting diode chip; Phosphor powder dispersed in the first resin packaging part; And A light emitting diode package comprising a transparent first resin package applied on the second resin package. The light emitting diode package of claim 6, wherein the second resin packaging part has a refractive index of 1.45 to 2.2. The light emitting diode package of claim 6, wherein the second resin packaging part is coated by a dotting method. A liquid crystal display panel; And A light emitting diode chip configured to supply light to the liquid crystal display panel, the package substrate having a first electrode structure and a second electrode structure, the light emitting diode chip mounted on the package substrate to be electrically connected to the first electrode structure and the second electrode structure; A second resin packaging part having a high refractive index of 1.45 to 2.2 formed of a transparent resin sealing the light emitting diode chip, a transparent first resin packaging part applied on the second resin packaging part, and a phosphor dispersed in the first resin packaging part A liquid crystal display device comprising a plurality of light emitting diode packages made of powder. Forming an upper package substrate having a cavity and a lower package substrate having a first electrode structure and a second electrode structure formed thereon; Mounting a light emitting diode chip on an upper surface of the first electrode structure in the upper package substrate provided with the cavity; Forming a second resin packaging part having a high refractive index of 1.45 to 2.2 formed of a transparent resin sealing the light emitting diode chip in a cavity provided in the upper package substrate; And The method of manufacturing a light emitting diode package comprising applying a transparent first resin packaging on the second resin packaging. The method of claim 10, further comprising dispersing the phosphor powder in the first resin packaging part. The method of claim 10, further comprising dispersing the phosphor powder in the second resin packaging part.
KR1020090118066A 2009-12-01 2009-12-01 Light emitting diode package and liquid crystal display device having thereof KR20110061421A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101313670B1 (en) * 2012-11-07 2013-10-02 김영석 Light-emitting diode package
WO2014084639A1 (en) * 2012-11-28 2014-06-05 주식회사 엘지화학 Light-emitting diode
CN113314651A (en) * 2016-10-25 2021-08-27 首尔半导体株式会社 Light emitting diode package and display device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101313670B1 (en) * 2012-11-07 2013-10-02 김영석 Light-emitting diode package
WO2014084639A1 (en) * 2012-11-28 2014-06-05 주식회사 엘지화학 Light-emitting diode
CN104823289A (en) * 2012-11-28 2015-08-05 株式会社Lg化学 Light-emitting diode
US9620687B2 (en) 2012-11-28 2017-04-11 Lg Chem, Ltd. Light emitting diode
US9660155B2 (en) 2012-11-28 2017-05-23 Lg Chem, Ltd. Light emitting diode
CN104823289B (en) * 2012-11-28 2019-01-01 株式会社Lg化学 Light emitting diode
CN113314651A (en) * 2016-10-25 2021-08-27 首尔半导体株式会社 Light emitting diode package and display device

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