US20150214508A1 - Display unit, method of manufacturing the same, and method of manufacturing electronic apparatus - Google Patents

Display unit, method of manufacturing the same, and method of manufacturing electronic apparatus Download PDF

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US20150214508A1
US20150214508A1 US14/417,229 US201314417229A US2015214508A1 US 20150214508 A1 US20150214508 A1 US 20150214508A1 US 201314417229 A US201314417229 A US 201314417229A US 2015214508 A1 US2015214508 A1 US 2015214508A1
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electrode
display unit
layer
light
barrier
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Takashi Sakairi
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Sony Corp
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Sony Corp
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    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L27/3244—
    • H01L51/0014—
    • H01L51/0023—
    • H01L51/5012—
    • H01L51/5088—
    • H01L51/5206—
    • H01L51/5221—
    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H01L2251/301—
    • H01L2251/303—
    • H01L51/005—
    • H01L51/0059—
    • H01L51/006—
    • H01L51/0081—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80517—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom

Definitions

  • the technology relates to a display unit including functional layers such as a hole injection layer and a light-emitting layer, a method of manufacturing the display unit, and a method of manufacturing an electronic apparatus.
  • a display using an organic electroluminescence (EL) device has attracted attention as one of flat panel displays.
  • the display is a self-luminous type, and thus has characteristics of wide viewing angle and low power consumption.
  • the organic EL device is considered to have sufficient responsiveness with respect to a high-speed video signal with high definition, and is being developed toward the practical use thereof.
  • the configuration of the organic EL device in which, for example, first electrodes, an organic layer including a light-emitting layer, and a second electrode are stacked in order is known.
  • a barrier formed of an insulating film is provided in a region between the first electrodes adjacent to each other (an inter-electrode region).
  • a method of forming the organic layer there are two methods mainly, that is, a method in which light-emitting layers of respective colors of red, green, and blue are individually evaporated for each device with use of an evaporation mask, and a method in which light-emitting layers of respective colors of red, green and blue are stacked and formed to be common to devices without using an evaporation mask.
  • the latter method is advantageous in terms of high definition and improvement in aperture ratio.
  • resistance of the hole injection layer is not sufficiently increased by the method in PTL1, and thus development of a method capable of preventing a leakage current more surely has been demanded.
  • a first method of manufacturing a display unit includes: forming a plurality of first electrodes; forming a functional layer that covers from the first electrode to an inter-electrode region; and locally applying an energy ray to the functional layer to form a disconnecting section or a high-resistance section in the functional layer in the inter-electrode region.
  • a method of manufacturing an electronic apparatus includes manufacturing a display unit.
  • the manufacturing the display unit includes: forming a plurality of first electrodes; forming a functional layer that covers from the first electrode to an inter-electrode region; and locally applying an energy ray to the functional layer to form a disconnecting section or a high-resistance section in the functional layer in the inter-electrode region.
  • the disconnecting section or the high-resistance section is formed in the functional layer by application of the energy ray, and therefore flow of a current through the functional layer is blocked by the inter-electrode region.
  • a display unit including: a plurality of first electrodes; and a functional layer covering from the first electrode to an inter-electrode region, and having a disconnecting section or a high-resistance section in the inter-electrode region, the disconnecting section or the high-resistance section being formed by local application of an energy ray.
  • a second method of manufacturing a display unit includes: forming a plurality of first electrodes; forming a terminal and a burrier in an inter-electrode region of the first electrodes, the terminal being embedded in the barrier; applying an energy ray to the barrier to expose a surface of the terminal embedded in the barrier, and electrically connecting the terminal to a second electrode, the second electrode facing the first electrode with a functional layer in between.
  • the second electrode is electrically connected to the terminal embedded in the barrier. Therefore, a region in which an electrode pad for connecting the second electrode is provided is allowed to be eliminated. For example, the electrode pad provided in the periphery of the display region becomes unnecessary, and a region (a peripheral section) between the display region and a dicing region is allowed to be decreased.
  • the barrier is shaved and smoothed by application of the energy ray, and thus disconnection of the second electrode is suppressed.
  • a disconnecting section or a high-resistance section is provided in a functional layer by application of an energy ray. Consequently, occurrence of a leakage current is more surely prevented.
  • FIG. 1 is a sectional diagram illustrating a structure of a display unit according to a first embodiment of the technology.
  • FIG. 2 is a diagram illustrating an entire configuration of the display unit illustrated in FIG. 1 .
  • FIG. 3 is a diagram illustrating an example of a pixel drive circuit illustrated in FIG. 2 .
  • FIG. 4 is a sectional diagram illustrating another example of a barrier illustrated in FIG. 1 .
  • FIG. 5A is a sectional diagram illustrating a step of manufacturing the display unit illustrated in FIG. 1 .
  • FIG. 5B is a sectional diagram illustrating a step following the step of FIG. 5A .
  • FIG. 5C is a sectional diagram illustrating a step following the step of FIG. 5B .
  • FIG. 6A is a sectional diagram illustrating a step following the step of FIG. 5C .
  • FIG. 6B is a sectional diagram illustrating a step following the step of FIG. 6A .
  • FIG. 6C is a sectional diagram illustrating a step following the step of FIG. 6B .
  • FIG. 7A is a sectional diagram illustrating a step following the step of FIG. 6C .
  • FIG. 7B is a sectional diagram illustrating a step following the step of FIG. 7A .
  • FIG. 8A is a sectional diagram illustrating a step following the step of FIG. 7B .
  • FIG. 8B is a sectional diagram illustrating a step following the step of FIG. 8A .
  • FIG. 9A is a sectional diagram illustrating a step following the step of FIG. 8B .
  • FIG. 9B is a sectional diagram illustrating a step following the step of FIG. 9A .
  • FIG. 10 is a sectional diagram illustrating another example of the step illustrated in FIG. 9A .
  • FIG. 11A is a sectional diagram illustrating a step following the step of FIG. 9B .
  • FIG. 11B is a sectional diagram illustrating a step following the step of FIG. 11A .
  • FIG. 12 is a sectional diagram illustrating a structure of a display unit according to a comparative example.
  • FIG. 13 is a sectional diagram illustrating a structure of a display unit according to a modification 1.
  • FIG. 14A is a sectional diagram illustrating a step of manufacturing the display unit illustrated in FIG. 13 .
  • FIG. 14B is a sectional diagram illustrating a step following the step of FIG. 14A .
  • FIG. 15 is a sectional diagram illustrating a structure of a display unit according to a modification 2.
  • FIG. 16 is a sectional diagram illustrating a structure of a display unit according to a second embodiment of the technology.
  • FIG. 17 is a sectional diagram illustrating a step of manufacturing the display unit illustrated in FIG. 16 .
  • FIG. 18A is a sectional diagram illustrating another example of the display unit illustrated in FIG. 16 .
  • FIG. 18B is a sectional diagram illustrating another example of the display unit illustrated in FIG. 18A .
  • FIG. 19 is a sectional diagram illustrating a structure of a display unit according to a third embodiment of the technology.
  • FIG. 20A is a sectional diagram illustrating an example of a step of manufacturing the display unit illustrated in FIG. 19 .
  • FIG. 20B is a sectional diagram illustrating a step following the step of FIG. 20A .
  • FIG. 21A is a sectional diagram illustrating another example of the step of manufacturing the display unit illustrated in FIG. 19 .
  • FIG. 21B is a sectional diagram illustrating a step following the step of FIG. 21A .
  • FIG. 22 is a sectional diagram illustrating a structure of a display unit according to a fourth embodiment of the technology.
  • FIG. 23A is a plan view illustrating the structure of the display unit illustrated in FIG. 12 .
  • FIG. 23B is a diagram illustrating a sectional structure taken along a B-B line in FIG. 23A .
  • FIG. 24A is a sectional diagram illustrating a step of manufacturing the display unit illustrated in FIG. 22 .
  • FIG. 24B is a sectional diagram illustrating a step following the step of FIG. 24A .
  • FIG. 24C is a sectional diagram illustrating a step following the step of FIG. 24B .
  • FIG. 25A is a sectional diagram illustrating a step following the step of FIG. 24C .
  • FIG. 25B is a sectional diagram illustrating a step following the step of FIG. 25A .
  • FIG. 25C is a sectional diagram illustrating a step following the step of FIG. 25B .
  • FIG. 26 is a plan view illustrating a schematic configuration of a module including the display unit illustrated in FIG. 1 and the like.
  • FIG. 27 is a perspective view illustrating an appearance of an application example 1.
  • FIG. 28A is a perspective view illustrating an appearance of an application example 2 viewed from a front side thereof.
  • FIG. 28B is a perspective view illustrating the appearance of the application example 2 viewed from a back side thereof.
  • FIG. 29 is a perspective view illustrating an appearance of an application example 3.
  • FIG. 30 is a perspective view illustrating an appearance of an application example 4.
  • FIG. 31A is a diagram illustrating an application example 5 in a closed state.
  • FIG. 31B is a diagram illustrating the application example 5 in an open state.
  • First embodiment (a display unit in which a disconnecting section is provided in a hole injection layer: top-emission type)
  • Modification 1 (a display unit in which a high-resistance section is provided in a hole injection layer)
  • Modification 2 (a display unit in which a disconnecting section is provided in a hole injection layer: bottom-emission type)
  • Second embodiment (a display unit in which a barrier is smoothed by application of an energy ray)
  • Third embodiment (a display unit in which a disconnecting section is provided in a light-emitting layer in addition to a hole injection layer)
  • FIG. 1 illustrates a sectional structure of a main part of a display unit (a display unit 1 ) according to a first embodiment of the technology.
  • the display unit 1 is a self-luminous display unit including a plurality of organic EL devices 10 , and includes a pixel drive circuit forming layer L 1 , a light emitting device forming layer L 2 including the organic EL devices 10 , and a counter substrate 21 in this order on a support substrate 11 .
  • the display unit 1 is a so-called top-emission type display unit having a light extraction direction on the counter substrate 21 side.
  • the pixel drive circuit forming layer L 1 may include, for example, a signal line drive circuit and a scan line drive circuit (both not illustrated) for picture display. Detail of each component will be described later.
  • FIG. 2 illustrates an entire configuration of the display unit 1 .
  • the display unit 1 includes a display region 110 on the support substrate 11 , and is used as an extra-thin organic light emission color display unit.
  • a signal line drive circuit 120 a scan line drive circuit 130 , and a power supply line drive circuit 140 that are drivers for picture display may be provided in the periphery of the display region 110 on the support substrate 11 .
  • the plurality of organic EL devices 10 ( 10 R, 10 G, and 10 B) that are arranged two-dimensionally in a matrix, and a pixel drive circuit 150 driving the organic EL devices 10 are provided.
  • the organic EL devices 10 R, 10 G, and 10 B emit light of red, green, and blue, respectively.
  • a plurality of signal lines 120 A 120 A 1 , 120 A 2 and so on to 120 Am, etc.
  • a plurality of power supply lines 140 A 140 A 1 and so on to 140 An, etc.
  • a plurality of scan lines 130 A 130 A 1 and so on to 130 An, etc.
  • One of the organic EL devices 10 R, 10 G, and 10 B is provided in an intersection of each of the signal lines 120 A and each of the scan lines 130 A. Both ends of each signal line 120 A are connected to the signal line drive circuit 120 , both ends of each scan line 130 A are connected to the scan line drive circuit 130 , and both ends of each power supply line 140 A are connected to the power supply line drive circuit 140 .
  • the signal line drive circuit 120 supplies, through the signal line 120 A, a signal voltage of a picture signal corresponding to luminance information supplied from a signal supply source (not illustrated) to the selected organic EL devices 10 R, 10 G, and 10 B. A signal voltage from the signal line drive circuit 120 is applied to both ends of the signal line 120 A.
  • the scan line drive circuit 130 is configured of a shift register or the like that sequentially shifts (transfers) a start pulse in synchronization with an input clock pulse.
  • the scan line drive circuit 130 scans the organic EL devices 10 R, 10 G, and 10 B for each row at the time of writing the picture signal, and sequentially supplies the scan signal to each of the scan lines 130 A.
  • the scan signal is supplied from the scan line drive circuit 130 to both ends of the scan line 130 A.
  • the power supply line drive circuit 140 is configured of a shift resistor or the like that sequentially shifts (transfers) a start pulse in synchronization with an input clock pulse.
  • the power supply line drive circuit 140 appropriately supplies one of a first potential and a second potential that are different from each other, to both ends of each power supply line 140 A in synchronization with the scan for each column by the signal line drive circuit 120 .
  • a conduction state or a non-conduction state of a drive transistor Tr 1 described later is selected.
  • the pixel drive circuit 150 is provided in a layer between the support substrate 11 and the organic EL devices 10 , that is, in the pixel drive circuit forming layer L 1 (a TFT layer 12 described later).
  • FIG. 3 illustrates a configuration example of the pixel drive circuit 150 .
  • the pixel drive circuit 150 is an active drive circuit including the drive transistor Tr 1 and a write transistor Tr 2 , a capacitor (a retention capacitance) Cs therebetween, and the organic EL device 10 .
  • the organic EL device 10 is connected in series with the drive transistor Tr 1 between the power supply line 140 A and a common power supply line (GND).
  • the drive transistor Tr 1 and the write transistor Tr 2 are each configured of a typical thin film transistor (TFT), and the configuration thereof may be an inverted-staggered structure (a so-called bottom gate type) or a staggered structure (a top gate type), and is not particularly limited.
  • TFT thin film transistor
  • the write transistor Tr 2 has a drain electrode connected to the signal line 120 A, and receives a picture signal from the signal line drive circuit 120 .
  • the write transistor Tr 2 has a gate electrode connected to the scan line 130 A, and receives a scan signal from the scan line drive circuit 130 .
  • the write transistor Tr 2 has a source electrode connected to a gate electrode of the drive transistor Tr 1 .
  • the drive transistor Tr 1 has a drain electrode connected to the power supply line 140 A, and the drain electrode is set to one of the first potential and the second potential by the power supply line drive circuit 140 .
  • the drive transistor Tr 1 has a source electrode connected to the organic EL device 10 .
  • the retention capacitance Cs is formed between the gate electrode of the drive transistor Tr 1 (the source electrode of the write transistor Tr 2 ) and the drain electrode of the drive transistor Tr 1 .
  • the organic EL devices 10 R, 10 G, and 10 B have a common configuration which will be given collectively.
  • the support substrate 11 is formed of glass, a silicon (Si) wafer, resin, a conductive material, or the like.
  • the support substrate 11 may be formed of a transmissive material or a non-transmissive material because light is extracted from the counter substrate 21 in the top-emission type.
  • a conductive substrate is used, a surface is insulated by silicon oxide (SiO 2 ) or resin.
  • the pixel drive circuit forming layer L 1 has a stacked structure including the TFT layer 12 and a planarization layer 13 .
  • the drive transistor Tr 1 and the write transistor Tr 2 that configure the pixel drive circuit 150 are provided, and the signal line 120 A, the scan line 130 A, and the power supply line 140 A (not illustrated) are also embedded.
  • the configuration of the TFT (the drive transistor Tr 1 and the write transistor Tr 2 ) of the TFT layer 12 is not particularly limited, and for example, a semiconductor layer may be formed using amorphous silicon (a-Si), an oxide semiconductor, an organic semiconductor, or the like.
  • the drive transistor Tr 1 and the write transistor Tr 2 may be configured of metal oxide semiconductor field effect transistor (MOSFET).
  • the planarization layer 13 planarizes the surface of the support substrate 11 formed with the pixel drive circuit 150 , and may be preferably formed of a material having higher pattern accuracy because fine connection hole 13 H is to be provided.
  • the drive transistor Tr 1 of the TFT layer 12 is electrically connected to the organic EL device 10 (a first electrode 14 described later) through the connection hole 13 H provided in the planarization layer 13 .
  • the connection hole 13 H is provided with a plug formed of a conductive metal.
  • Examples of the material of the planarization layer 13 may include an organic material such as polyimide, and an inorganic material such as silicon oxide (SiO 2 ), silicon nitride (SiNx), and silicon oxynitride (SiON).
  • the organic EL devices 10 In the light-emitting device forming layer L 2 , the organic EL devices 10 , the barrier 19 , and a protective layer 18 covering the organic EL devices 10 and the barrier 19 are provided.
  • Each of the organic EL device 10 is configured by stacking the first electrode 14 as an anode electrode, the organic layer including the hole injection layer 15 and the light-emitting layer 16 , and a second electrode 17 as a cathode electrode in order from the support substrate 11 side.
  • the first electrode 14 is provided for each organic EL device 10 , and the plurality of first electrodes 14 are arranged to be distanced from one another on the planarization layer 13 .
  • the first electrode 14 has a function as an anode and a function as a reflective layer, and may be desirably formed of a material having high reflectance and high hole injection property.
  • Such a first electrode 14 may have, for example, a thickness in a stacking direction (hereinafter, simply referred to as a thickness) of 30 nm or more and 1000 nm or less, and examples of the material thereof may include metal elements such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), aluminum (Al), and silver (Ag), and an alloy thereof.
  • the first electrode 14 of the display unit 1 may have a stacked structure of first electrodes 14 A and 14 B.
  • titanium may be used for the first electrode 14 A in a lower layer (on the planarization layer 13 side)
  • aluminum may be used for the first electrode 14 B in an upper layer (on the hole injection layer 15 side).
  • the barrier 19 is provided between the first electrodes 14 adjacent to each other (in an inter-electrode region), and covers an end of the surface of the first electrode 14 (the first electrode 14 B).
  • the barrier 19 rises from the surface of the first electrode 14 toward the second electrode 17 side, and surrounds the first electrode 14 with the side surface of the barrier 19 (an opening).
  • the barrier 19 is provided to ensure insulation property between the first electrode 14 and the second electrode 17 and between the organic EL devices 10 adjacent to each other, and to control the light-emitting region into a desired shape accurately.
  • the opening of the barrier 19 on the first electrode 14 corresponds to the light-emitting region.
  • the size of the opening of the barrier 19 may be uniform from the first electrode 14 to the second electrode 17 (in a depth direction), namely, the cross-sectional surface (XZ cross-sectional surface) of the barrier 19 has a substantially rectangular shape. As illustrated in FIG. 4 , the cross-sectional surface of the barrier 19 may have a forward tapered shape, and the opening may be increased from the first electrode 14 toward the second electrode 17 .
  • the barrier 19 may be formed of silicon oxide, silicon nitride, or silicon oxynitride, and may have a thickness of 10 nm or more.
  • the organic layer including the hole injection layer 15 and the light-emitting layer 16 has the same structure irrespective of the color of light emitted from the organic EL device 10 ( 10 R, 10 G, and 10 B), and may be configured by stacking, for example, the hole injection layer 15 , a hole transport layer (not illustrated), the light-emitting layer 16 , an electron transport layer (not illustrated), and an electron injection layer (not illustrated) in this order from the first electrode 14 side.
  • the hole injection layer 15 is a buffer layer for increasing hole injection efficiency and for preventing leakage.
  • a disconnecting section 15 D of the hole injection layer 15 is provided in the inter-electrode region. Accordingly, occurrence of a leakage current through the hole injection layer 15 is allowed to be prevented.
  • the disconnecting section 15 D is a section formed by removing the hole injection layer 15 by irradiation of the energy ray. The current flowing between the organic EL devices 10 through the hole injection layer 15 is blocked by the disconnecting section 15 D.
  • the disconnection section 15 D is preferably formed over the inter-electrode region, may be provided in at least a part of the inter-electrode region.
  • the disconnecting section 15 D may be provided at the same position (planar view) as the surface of the barrier 19 ( FIG. 1 ).
  • the hole injection layer 15 may have a thickness of 1 nm or more and 300 nm or less, and may be formed of a hexaazatriphenylene derivative illustrated in Chemical Formula 1 or 2.
  • R 1 to R 6 each are independently a substituted group selected from a group of hydrogen, halogen, a hydroxyl group, an amino group, an arylamino group, a substituted or unsubstituted carbonyl group with 20 or less carbon atoms, a substituted or unsubstituted carbonyl ester group with 20 or less carbon atoms, a substituted or unsubstituted alkyl group with 20 or less carbon atoms, a substituted or unsubstituted alkenyl group with 20 or less carbon atoms, a substituted or unsubstituted alkoxyl group with 20 or less carbon atoms, a substituted or unsubstituted aryl group with 30 or less carbon atoms, a substituted or unsubstituted heterocyclic group with 30 or less carbon atoms, a nitrile group, a cyano group, a nitro group, and a silyl group, and adjacent groups R m , where
  • the hole transport layer is to increase the hole transport efficiency to the light-emitting layer 16 .
  • the hole transport layer may have a thickness of about 40 nm, and may be formed of 4,4′,4′′-tris(3-metylphenylphenylamino)triphenylamine (m-MTDATA) or alpha-naphtylphenyldiamine (alpha NPD).
  • m-MTDATA 4,4′,4′′-tris(3-metylphenylphenylamino)triphenylamine
  • alpha NPD alpha-naphtylphenyldiamine
  • the hole transport layer, the light-emitting layer 16 , the electron transport layer, and the electron injection layer are common to all of the organic EL devices 10 , and are also provided in the inter-electrode region. In other words, in the disconnecting section 15 D of the hole injection layer 15 , for example, the hole transport layer may be in contact with the barrier 19 .
  • the light-emitting layer 16 is a light-emitting layer for emitting white light, and for example, may include a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer (all not illustrated) that are stacked between the first electrode 14 and the second electrode 17 .
  • the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer generate red light, green light, and blue light, respectively, by recombination of a part of holes that are injected from the first electrode 14 through the hole injection layer 15 and the hole transport layer and a part of electrons that are injected from the second electrode 17 through the electron injection layer and the electron transport layer, in response to application of an electric field.
  • the red light-emitting layer may include one or more of a red light-emitting material, a hole transport material, an electron transport material, and a both charge transport material.
  • the red light-emitting material may be a fluorescent material or a phosphorescent material.
  • the red light-emitting layer may have a thickness of about 5 nm, and may be formed of 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi) mixed with 30 wt % of 2,6-bis ⁇ (4′-methoxydiphenylamino)styryl>-1,5-dicyanonaphtaren (BSN).
  • DPVBi 4,4-bis(2,2-diphenylvinyl)biphenyl
  • the green light-emitting layer may include one or more of a green light-emitting material, a hole transport material, an electron transport material, and a both charge transport material.
  • the green light-emitting material may be a fluorescent material or a phosphorescent material.
  • the green light-emitting layer may have a thickness of about 10 nm, and may be formed of DPVBi mixed with 5 wt % of Coumarin 6.
  • the blue light-emitting layer may include one or more of a blue light-emitting material, a hole transport material, an electron transport material, and a both charge transport material.
  • the blue light-emitting material may be a fluorescent material or a phosphorescent material.
  • the blue light-emitting layer may have a thickness of about 30 nm, and may be formed of DPVBi mixed with 2.5 wt % of 4,4′-bis ⁇ 2- ⁇ 4-(N,N-diphenylamino)phenyl ⁇ vinyl>biphenyl (DPAVBi).
  • the electron transport layer is to increase the electron transport efficiency to the light-emitting layer 16 , and for example, may be formed of 8-hydroxyquinorinaluminum (Al3) with a thickness of about 20 nm.
  • the electron injection layer is to increase the electron injection efficiency to the light-emitting layer 16 , and for example, may be formed of LiF, Li 2 O, or the like with a thickness of about 0.3 nm.
  • the second electrode 17 is paired with the first electrode 14 with the organic layer in between, and is provided on the electron injection layer so as to be insulated from the first electrode 14 and so as to be common to the organic EL devices 10 .
  • the second electrode 17 is formed of a light-transmissive transparent material, and may be formed of, for example, an alloy of aluminum (Al, magnesium (Mg), silver (Ag), calcium (Ca), or sodium (Na). Among them, an alloy of magnesium and silver (Mg—Ag alloy) is preferable because the alloy has a conductivity and small absorbability in a thin film state.
  • an alloy of aluminum (Al and lithium (Li) (Al—Li alloy) may be used, or indium tin oxide (ITO), zinc oxide (ZnO), alumina-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium zinc oxide (IZO), indium titanium oxide (ITiO), indium tungsten oxide (IWO), or the like may be used.
  • the protective layer 18 may be formed of an insulating resin material such as polyimide, similarly to the planarization layer 13 .
  • the counter substrate 21 seals the organic EL devices 10 together with an adhesive layer (not illustrated) such as a thermosetting resin.
  • the counter substrate 21 is formed of a transparent glass material or a transparent plastic material that allows light generated in the light-emitting layer 16 to pass therethrough.
  • a color filter (not illustrated) is provided on one surface of the counter substrate 21 .
  • the color filter includes a red filter, a green filter, and a blue filter that are arranged in order corresponding to the organic EL devices 10 R, 10 G, and 10 B, respectively.
  • the color filter may be provided on any of the surfaces of the counter substrate 21 , is preferably provided on a surface on the organic EL devices 10 side. This is because the color filter is not exposed on the surface and is protected by the protective layer 18 (or the adhesive layer). In addition, this is because a distance between the light-emitting layer 16 and the color filter is decreased so as to prevent the light emitted from the light-emitting layer 16 from entering adjacent other color filter to cause color mixture.
  • Such a display unit 1 may be manufactured in the following way, for example ( FIG. 5A to FIG. 11B ).
  • the pixel drive circuit 150 (the TFT layer 12 ) including the drive transistor Tr 1 is formed on the support substrate 11 made of the above-described material, and for example, a photosensitive resin is then applied on the entire surface of the support substrate 11 .
  • the photosensitive resin is subjected to exposure and development to be patterned into a predetermined shape, and thus the planarization layer 13 is formed.
  • the contact hole 13 H and the plug are formed ( FIG. 5A ).
  • a metal film 14 AM made of titanium with a thickness of about 2 nm or more, and a metal film 14 BM made of aluminum with a thickness of about 20 nm or more are formed by, for example, sputtering in order on the planarization layer 13 .
  • a resist 22 is applied on the metal film 14 BM ( FIG. 5C ), and the metal film 14 M (the metal films 14 AM and 14 BM) is patterned using photolithography. Specifically, after the resist 22 is exposed, dry etching is performed ( FIG. 6A ), and the resist 22 is removed by ashing and washing to form the first electrode 14 divided for each organic EL device 10 ( FIG. 6B ).
  • an insulating film 19 M made of, for example, silicon oxide is formed to have a thickness of, for example, 20 nm or more on the entire surface of the support substrate 11 .
  • the insulating film 19 M is formed to be larger in thickness than the first electrode 14 .
  • the insulating film 19 M is formed using, for example, plasma chemical vapor deposition (CVD) that is capable of forming a conformal film.
  • High density plasma (HPD) may be used to fill a gap (to prevent formation of pore) between the first electrodes 14 .
  • the barrier 19 is formed by photolithography and etching.
  • a resist 23 is applied on the insulating film 19 M, and is then exposed ( FIG. 7A ). Then, etching is performed to form an opening on the insulating film 19 M ( FIG. 7B ), and the resist 23 is removed by ashing and washing ( FIG. 8A ). As a result, the barrier 19 is formed.
  • the hole injection layer 15 is formed by, for example, an evaporation method on the entire surface of the support substrate 11 , and the hole injection layer 15 covering from the first electrode 14 to the barrier 19 in the inter-electrode region is provided.
  • en energy ray E having directivity is applied to the hole injection layer 15 ( FIG. 9A ) to form the disconnecting section 15 D ( FIG. 9B ).
  • an ion beam, an atomic beam, a molecular beam, an electron beam, a laser beam, and the like may be used as the energy ray E.
  • the hole injection layer 15 in the inter-electrode region is removed, and thus the disconnecting section 15 D is formed.
  • the energy ray E is applied to the surface of the first electrode 14 at a low angle of, for example, 1 degree or more and less than 90 degrees.
  • the barrier 19 is raised compared with the surface of the first electrode 14 . Therefore, the energy ray E applied at a low angle is blocked by the barrier 19 , and the hole injection layer 15 on the first electrode 14 is prevented from being removed.
  • the energy ray E is locally applied to the hole injection layer 15 in the inter-electrode region with use of the shape of the barrier 19 so that the disconnecting section 15 D is allowed to be formed by self-alignment without using a mask or the like.
  • the hole injection layer 15 is selectively removed by the application of the energy ray E.
  • the hole injection layer 15 is extremely smaller in thickness than the barrier 19 or the like in the lower layer, and thus provision of the disconnecting section 15 D does not affects the light-emitting layer 16 , the second electrode 17 , and the like in the upper layer.
  • the energy ray E may be applied.
  • the disconnecting section 15 D of the hole injection layer 15 and the metal film 14 M in a lower layer of the barrier 19 are removed to form a gap. In other words, the gap between the first electrodes 14 adjacent to each other is formed.
  • the hole transport layer (not illustrated), the light-emitting layer 16 , the electron transport layer (not illustrated), the electron injection layer (not illustrated), and the second electrode 17 are formed by, for example, an evaporation method in this order on the entire surface of the support substrate 11 .
  • the organic EL device 10 is formed.
  • the protective layer 18 is formed by, for example, CVD or sputtering on the organic EL device 10 ( FIG. 11B ). Finally, the counter substrate 21 provided with the color filter is bonded to the protective layer 18 with the adhesive layer (not illustrated) in between to complete the display unit 1 .
  • the scan signal is supplied from the scan line drive circuit 130 to each of the organic EL devices 10 ( 10 R, 10 G, and 10 B) through the gate electrode of the write transistor Tr 2 , and the picture signal is supplied from the signal line drive circuit 120 through the write transistor Tr 2 and is retained in the retention capacitance Cs.
  • the drive transistor Tr 1 is controlled to be turned on or off in response to the signal retained in the retention capacitance Cs, and thus a drive current Id is injected to each of the organic EL devices 10 . This causes recombination of holes and electrons, thereby resulting in light emission.
  • the light is extracted after passing through the second electrode 17 , the color filter (not illustrated), and the counter substrate 21 .
  • FIG. 12 illustrates a sectional structure of a display unit (a display unit 100 ) according to a comparative example.
  • a disconnecting section is not provided in a hole injection layer 151 , and the hole injection layers 151 in respective organic EL devices 100 E are connected to one another. Accordingly, a drive current flows between the organic EL devices 100 E through the hole injection layer 151 , which may result in occurrence of leakage.
  • the organic layer is not colored individually for each organic EL device, and thus occurrence of leakage easily becomes an issue.
  • Patent Literature 1 a method of increasing resistance of a hole injection layer between devices by a barrier provided in an inverted-tapered shape to prevent occurrence of leakage is proposed.
  • the barrier is deformed into a tapered shape by thermal treatment after the formation of the hole injection layer, and thus an organic layer such as the hole injection layer may be deteriorated by heat.
  • the disconnecting section 150 of the hole injection layer 15 is formed by application of the energy ray E, flow of the current through the hole injection layer 15 is blocked by the inter-electrode region. Accordingly, occurrence of leakage through the hole injection layer 15 is allowed to be suppressed more surely.
  • appropriately selecting the energy ray E prevents characteristic deterioration of the organic EL device 10 . For example, heat is not generated by application of an ion beam, and thus the characteristics of the organic EL device 10 are maintained without deterioration.
  • the energy ray E is locally applied to the hole injection layer 15 in the inter-electrode region with use of the shape of the barrier 19 , and thus the disconnecting section 15 D is allowed to be formed by self alignment without using a mask or the like.
  • the disconnecting section 15 D of the hole injection layer 15 is provided in the inter-electrode region by application of the energy ray E, occurrence of leakage through the hole injection layer 15 is allowed to be prevented more surely.
  • FIG. 13 illustrates a sectional structure of a display unit (a display unit 1 A) according to a modification 1.
  • the display unit 1 A has a high-resistance section 15 H of the hole injection layer 15 in the inter-electrode region. Except for this point, the display unit 1 A has a structure, function, and effects similar to those of the display unit 1 .
  • the high-resistance section 15 H of the hole injection layer 15 is a section to which the energy ray E has been applied similarly to the first embodiment.
  • the hole injection layer 15 is not removed, and the material thereof is modified by application of the energy ray E to have the high resistance ( FIG. 14B ). Accordingly, occurrence of a leakage current through the hole injection layer 15 is allowed to be prevented, similarly to the dis-connecting section 15 D.
  • FIG. 15 illustrates a sectional structure of a display unit (a display unit 1 B) according to a modification 2.
  • a display unit 1 B a picture is displayed on the support substrate 11 side.
  • the display unit 1 B is a so-called bottom-emission type display unit. Except for this point, the display unit 1 B has a structure, function, and effects similar to those of the display unit 1 .
  • the support substrate 11 and the first electrode 14 are each formed of a transparent material, and the second electrode 17 is formed of a reflective material. Light emitted from the light-emitting layer 16 is extracted after passing through the first electrode 14 and the support substrate 11 .
  • the high-resistance section 15 H may be provided in place of the disconnecting section 15 D ( FIG. 13 ).
  • FIG. 16 illustrates a sectional structure of a display unit (a display unit 2 ) according to a second embodiment.
  • the display unit 2 by application of the energy ray E, the hole injection layer 15 is removed and a part of the barrier 19 is shaved. Except for this point, the display unit 2 has a structure, function, and effects similar to those of the display unit 1 .
  • the energy ray E when the energy ray E is applied to the hole injection layer 15 , selection of the kind of the energy ray E allows etching of the surface of the barrier 19 .
  • the barrier 19 is etched.
  • the etched barrier 19 is smoothed compared with the time of formation, and a step between the barrier 19 and the first electrode 14 is decreased. In such a way, smoothing the barrier 19 prevents disconnection of the second electrode 17 on the barrier 19 .
  • the energy ray E may be applied to the barrier 19 having a projection 19 P.
  • Providing the projection 19 P allows control of etching of the barrier 19 by application of the energy ray E.
  • the size and the shape of the projection 19 P may be appropriately adjusted, and the cross-sectional surface of the projection 19 P may be, for example, a square shape ( FIG. 18A ) or a triangular shape ( FIG. 18B ).
  • FIG. 19 illustrates a sectional structure of a display unit (a display unit 3 ) according to a third embodiment.
  • the disconnecting section 15 D of the hole injection layer 15 and a disconnecting section (a disconnecting section 16 D) of the light-emitting layer 16 are provided in the inter-electrode region. Except for this point, the display unit 3 has a structure, function, and effects similar to those of the display unit 1 .
  • the disconnecting section 16 D of the light-emitting layer 16 is a section in which the light-emitting layer 16 is removed by application of the energy ray E.
  • a step formed in the second electrode 17 between the organic EL devices 10 is decreased, and thus disconnection of the second electrode 17 is allowed to be prevented.
  • providing the disconnecting section 16 D in addition to the disconnecting section 15 D more effectively prevents occurrence of a leakage current.
  • the disconnecting section 16 D of the light-emitting layer 16 may be formed together with the disconnecting section 15 D of the hole injection layer 15 by application of the energy ray E ( FIG. 20B ) after the hole injection layer 15 and the light-emitting layer 16 are successively formed.
  • the disconnecting section 15 D is formed in the hole injection layer 15 , the light-emitting layer 16 is formed, and then the disconnecting section 16 D of the light-emitting layer 16 may be formed by application of the energy ray E again ( FIG. 21B ).
  • FIG. 22 illustrates a sectional structure of a display unit (a display unit 4 ) according to a fourth embodiment.
  • the disconnecting section 16 D is provided in the light-emitting layer 16 similarly to the above-described display unit 3 .
  • a terminal (a terminal 17 T) electrically connected to the second electrode 17 is embedded in the barrier 19 .
  • the display unit 4 has a structure, function, and effects similar to those of the display unit 1 .
  • the terminal 17 T may be formed of, for example, tungsten, titanium, aluminum, or titanium nitride (TiN), and is embedded in the barrier 19 so that the surface thereof is exposed. The surface of the terminal 17 T is in contact with the second electrode 17 , and the terminal 17 T is electrically connected to the second electrode 17 .
  • the terminal 17 T may be connected to the common power supply line (GND) ( FIG. 3 ).
  • the second electrode 17 is provided in a region wider than the display region 110 , and is electrically connected to an electrode pad 117 T that is arranged so as to surround the display region 110 ( FIGS. 23A and 23B ).
  • an electrode pad 117 T that is arranged so as to surround the display region 110 ( FIGS. 23A and 23B ).
  • it is necessary to provide such an electrode pad 117 T outside of the display region 110 and a region (a peripheral region) between the display region 110 and a dicing region 111 is accordingly increased.
  • a mask is used to form the electrode pad 117 T, and therefore it is necessary to provide an area for margin between the display region 110 and the electrode pad 117 T.
  • a bonding pad 118 may be provided outside of the electrode pad 117 T.
  • the terminal 17 T is provided so that the peripheral region is allowed to be decreased.
  • the disconnecting section 16 D of the light-emitting layer 16 prevents disconnection of the second electrode 17 .
  • the disconnecting section 16 D may be provided over a wider region ( FIG. 19 ).
  • FIG. 24A to FIG. 25C illustrate a method of manufacturing the display unit 4 .
  • the terminal 17 T is formed in the inter-electrode region.
  • the barrier 19 is formed so that the terminal 17 T is embedded therein and is totally covered therewith ( FIG. 24A ).
  • the hole injection layer 15 is formed over the entire surface of the support substrate 11 ( FIG. 24B ), and the energy ray E is then applied to form the disconnecting section 15 D of the hole injection layer 15 ( FIG. 24C ).
  • the light-emitting layer 16 is formed over the entire surface of the substrate 11 ( FIG. 25A ), and the energy ray E is applied thereto again.
  • the disconnecting section 16 D is formed in the light-emitting layer 16 , and the barrier 19 is shaved so that the surface of the terminal 17 T is exposed ( FIG. 25B ).
  • the second electrode 17 is formed to be electrically connect with the terminal 17 T ( FIG. 25C ).
  • the barrier 19 is shaved and smoothed in addition to providing the disconnecting section 16 D in the light-emitting layer 16 , the disconnection of the second electrode 17 is more surely prevented.
  • the protective layer 18 and the counter substrate 21 are provided to complete the display unit 4 .
  • any of the display units 1 , 1 A, 1 B, 2 , 3 , and 4 of the above-described embodiments and the modifications may be incorporated in various kinds of electronic apparatuses such as application examples 1 to 5 described below as a module illustrated in FIG. 26 , for example.
  • a microdisplay demanded to have high definition such as a view finder of a video camcorder or a single-lens reflex camera, and a head-mount display.
  • the module may have a region 210 exposed from the counter substrate 21 on a side of the support substrate 11 , and may have an external connection terminal (not illustrated) that is formed of an extended wire of the signal line drive circuit 120 and an extended wire of the scan line drive circuit 130 in the exposed region 210 .
  • the external connection terminal may be provided with a flexible printed circuit (FPC) 220 for inputting and outputting signals.
  • FPC flexible printed circuit
  • FIG. 27 illustrates an appearance of a television to which the display unit of any of the embodiments and the modifications is applied.
  • the television may have, for example, a picture display screen section 300 including a front panel 310 and a filter glass 320 , and the picture display screen section 300 is configured of the display unit according to any of the embodiments and the modifications.
  • FIGS. 28A and 28B each illustrate an appearance of a digital camera to which the display unit of any of the embodiments and the modifications is applied.
  • the digital camera may have, for example, a light-emitting section 410 for a flash, a display section 420 , a menu switch 430 , and a shutter button 440 , and the display section 420 is configured of the display unit according to any of the embodiments and the modifications.
  • FIG. 29 illustrates an appearance of a notebook personal computer to which the display unit of any of the embodiments and the modifications is applied.
  • the notebook personal computer may have, for example, a main body 510 , a keyboard 520 for input operation of characters and the like, and a display section 530 displaying a picture, and the display section 530 is configured of the display unit according to any of the embodiments and the modifications.
  • FIG. 30 illustrates an appearance of a video camcorder to which the display unit of any of the embodiments and the modifications is applied.
  • the video camcorder may have, for example, a main body section 610 , a lens 620 that is used for shooting a subject and is provided on a front side surface of the main body section 610 , a start-stop switch 630 for shooting, and a display section 640 , and the display section 640 is configured of the display unit according to any of the embodiments and the modifications.
  • FIGS. 31A and 31B each illustrates an appearance of a mobile phone to which the display unit of any of the embodiments and the modifications is applied.
  • the mobile phone may be configured of, for example, an upper housing 710 and a lower housing 720 that are connected by a connection section (a hinge section) 730 , and may have a display 740 , a sub-display 750 , a picture light 760 , and a camera 770 .
  • the display 740 or the sub-display 750 is configured of the display unit according to any of the embodiments and the modifications.
  • each layer is not limited to those described in the above-described embodiments and the like, and each layer may be formed of any other material with any other thickness by any other formation method under any other formation condition.
  • the configuration of the light-emitting layer 16 for emitting white light is not particularly limited, and may be configured by stacking light-emitting layers of two colors that are in complementary color relationship to each other, for example, an orange light-emitting layer and a blue light-emitting layer, or a blue-green light-emitting layer and a red light-emitting layer.
  • the light-emitting layer 16 is not limited to the light-emitting layer for emitting white light, and is applicable to a display unit for a single color in which, for example, only a green light-emitting layer is formed.
  • the light-emitting layer 16 may be applied to a display unit in which the light-emitting layer 16 is colored individually for each organic EL device 10 .
  • the first electrode 14 serves as an anode and the second electrode 17 serves as a cathode
  • the anode and the cathode may be inverted, and the first electrode 14 may serve as a cathode and the second electrode 17 may serve as an anode.
  • the display units 3 and 4 may be a bottom-emission display unit.
  • a method of manufacturing a display unit including:
  • a barrier is provided in the inter-electrode region
  • the energy ray is applied to the functional layer covering the barrier.
  • the terminal is electrically connected to the second electrode.
  • the energy ray is applied to form the disconnecting section and to shave the barrier
  • a second electrode that is paired with the first electrode is formed with the functional layer therebetween.
  • a method of manufacturing an electronic apparatus including manufacturing a display unit, the manufacturing the display unit including:
  • a display unit including:
  • disconnecting section or a high-resistance section in the inter-electrode region, the disconnecting section or the high-resistance section being formed by local application of an energy ray.

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JP2014032817A (ja) 2014-02-20
CN104508848A (zh) 2015-04-08
KR20200142117A (ko) 2020-12-21
KR20150040869A (ko) 2015-04-15
CN110233163B (zh) 2023-05-26
US20190229300A1 (en) 2019-07-25
CN110233163A (zh) 2019-09-13
US11088355B2 (en) 2021-08-10

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