US20140361675A1 - Light source device and filament - Google Patents

Light source device and filament Download PDF

Info

Publication number
US20140361675A1
US20140361675A1 US14/368,795 US201214368795A US2014361675A1 US 20140361675 A1 US20140361675 A1 US 20140361675A1 US 201214368795 A US201214368795 A US 201214368795A US 2014361675 A1 US2014361675 A1 US 2014361675A1
Authority
US
United States
Prior art keywords
filament
source device
light source
white scatterer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/368,795
Other languages
English (en)
Inventor
Takahiro Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Assigned to STANLEY ELECTRIC CO., LTD. reassignment STANLEY ELECTRIC CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MATSUMOTO, TAKAHIRO
Publication of US20140361675A1 publication Critical patent/US20140361675A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01KELECTRIC INCANDESCENT LAMPS
    • H01K1/00Details
    • H01K1/26Screens; Filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01KELECTRIC INCANDESCENT LAMPS
    • H01K1/00Details
    • H01K1/02Incandescent bodies
    • H01K1/04Incandescent bodies characterised by the material thereof
    • H01K1/10Bodies of metal or carbon combined with other substance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01KELECTRIC INCANDESCENT LAMPS
    • H01K1/00Details
    • H01K1/62One or more circuit elements structurally associated with the lamp
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01KELECTRIC INCANDESCENT LAMPS
    • H01K3/00Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
    • H01K3/02Manufacture of incandescent bodies

Definitions

  • the present invention relates to a filament for light sources showing improved energy utilization efficiency, and it also relates to, in particular, a light source device, especially an incandescent light bulb, a near infrared light source, and a thermoelectronic emission source, utilizing such a filament.
  • incandescent light bulbs which produce light with a filament such as tungsten filament heated by flowing an electric current through it.
  • Incandescent light bulbs show a radiation spectrum close to that of sunlight providing superior color rendering properties, and show high electric power-to-light conversion efficiency of 80% or higher.
  • 90% or more of the components of the light radiated by incandescent light bulbs consists of infrared radiation components as shown in FIG. 1 (in the case of 3000K in FIG. 1 ). Therefore, the electric power-to-visible light conversion efficiency of incandescent light bulbs is as low as about 15 lm/W.
  • the electric power-to-visible light conversion efficiency of fluorescent lamps is about 90 lm/W, which is higher than that of incandescent light bulbs. Therefore, although incandescent light bulbs show superior color rendering properties, they impose larger environmental loads compared with fluorescent lamps.
  • Patent documents 1 and 2 propose a configuration for realizing a higher filament temperature, in which an inert gas or halogen gas is enclosed in the inside of an electric bulb so that the evaporated filament material is halogenated and returned to the filament (halogen cycle) to obtain higher filament temperature.
  • a lamp is generally called halogen lamp, and such a configuration provides the effects of increasing electric power-to-visible light conversion efficiency and prolonging filament lifetime.
  • type of the gas to be enclosed and control of the pressure thereof are important for obtaining increased efficiency and prolonged filament lifetime.
  • Patent documents 3 to 5 disclose a configuration in which an infrared light reflection coating is applied on the surface of electric bulb glass to reflect infrared lights emitted from the filament and return them to the filament, so that the returned lights are absorbed by the filament.
  • the filament is re-heated with the infrared lights absorbed by the filament to attain higher efficiency.
  • Patent documents 6 to 9 propose a configuration that a microstructure is produced on the filament itself, and infrared radiation is suppressed by the physical effects of the microstructure to increase the rate of visible light radiation.
  • the technique of reflecting infrared lights with an infrared light reflection coating to cause the reabsorption by the filament cannot provide efficient reabsorption of infrared lights by the filament, since the filament has a high reflectance for infrared lights as high as 70%.
  • the infrared lights reflected by the infrared light reflection coating are absorbed by the parts other than the filament, for example, the part for holding the filament, base, and so forth, and are not fully used for heating the filament. For these reasons, it is difficult to significantly improve the conversion efficiency with this technique.
  • the efficiency currently obtainable thereby is about 20 lm/W.
  • the production of the microstructure requires use of a highly advanced microprocessing technique such as the electron beam lithography, and therefore light sources produced by utilizing it becomes extremely expensive.
  • it has also a problem that even though a microstructure is formed on a W substrate, which is a high temperature resistant material, the microstructure on the surface of W is melted and destroyed at a heating temperature of about 1000° C.
  • An object of the present invention is to provide a light source device comprising a filament showing high electric power-to-visible light conversion efficiency.
  • infrared light radiation can be reduced and visible light radiation can be enhanced with a filament showing a high reflectance for the infrared wavelength region and a low reflectance for the visible light wavelength region, and therefore a light source device showing a high visible luminous efficiency can be obtained.
  • FIG. 1 is a graph showing wavelength dependency of radiation energy of a conventional tungsten filament.
  • FIG. 2 is a scanning electron microphotograph showing particle shape of the white scatterer (lutetia) used in the example.
  • FIG. 3 is a graph showing wavelength dependencies of reflectance and radiation efficiency of a filament substrate (tungsten).
  • FIG. 4 is a graph showing wavelength dependencies of reflectance and radiation efficiency of a filament comprising a substrate (tungsten) coated with a white scatterer layer that is not doped with impurities or does not contain metal particles.
  • FIG. 5 is a graph showing wavelength dependencies of reflectance and radiation efficiency of a filament comprising a substrate (tungsten) coated with a white scatterer layer doped with impurities according to the present invention.
  • FIG. 6 is a graph showing infrared reflection spectra of a white color scatterer not subjected and subjected to dangling bond removing and surface crystal defect restoring treatments.
  • FIG. 7 is a graph showing wavelength dependencies of reflectance and radiation efficiency of a filament comprising a substrate (tungsten) coated with impurity-doped white scatterer layer subjected to OH group and surface crystal defect removing treatments.
  • FIG. 8 is a sectional view of the incandescent lamp of the example.
  • the present invention relates to a light source device comprising a translucent gastight container, a filament disposed in the translucent gastight container, and a lead wire for supplying an electric current to the filament.
  • the filament comprises a substrate formed with a metal material and a white scatterer layer covering the substrate. And to the white scatterer layer, a visible light-absorbing material that absorbs lights of visible region is added. With this configuration, the reflectance of the filament can be increased for a wide wavelength range including the infrared region, the reflectance of the same for visible region can be reduced, and therefore when the filament is heated by supply of an electric current or the like, the filament can highly efficiently emit visible lights according to the principle described later.
  • the filament comprises a substrate constituted with a metal material and a light-reflecting layer covering the substrate and showing a higher reflectance for infrared lights compared with the substrate, and the light-reflecting layer comprises a reflectance-reducing material that reduces the reflectance of the light scatterer for lights of visible region.
  • the light-reflecting layer can be formed with a white scatterer to which a visible light-absorbing material that absorbs lights of visible region is added as a reflectance-reducing material.
  • the substrate of the filament is formed with a material containing a metal showing a high melting point, for example, any of HfC (melting point, 4160K), TaC (melting point, 4150K), ZrC (melting point, 3810K), C (melting point, 3800K), W (melting point, 3680K), Re (melting point, 3453K), Os (melting point, 3327K), Ta (melting point, 3269K), Mo (melting point, 2890K), Nb (melting point, 2741K), Ir (melting point, 2683K), Ru (melting point, 2583K), Rh (melting point, 2239K), V (melting point, 2160K), Cr (melting point, 2130K) and Zr (melting point, 2125K).
  • HfC melting point, 4160K
  • TaC melting point, 4150K
  • ZrC melting point, 3810K
  • C melting point, 3800K
  • W melting point, 3680K
  • Re melting
  • the white scatterer there is used a material containing, for example, any of yttria (Y 2 O 3 ), hafnia (HfO 2 ), lutetia (Lu 2 O 3 ), thoria (ThO 2 ), magnesia (MgO), zirconia (ZrO 2 ), ytterbia (Yb 2 O 3 ), strontia (SrO), calcium oxide (CaO), beryllium oxide (BeO), holmium oxide (Ho 2 O 3 ), zirconium nitride (ZrN), titanium nitride (TiN) and boron nitride (BN).
  • Y 2 O 3 yttria
  • HfO 2 hafnia
  • lutetia Li 2 O 3
  • ThO 2 thoria
  • MgO magnesia
  • ZrO 2 zirconia
  • Yb 2 O 3 ytterbia
  • strontia str
  • these white scatterers do not substantially absorb lights of the infrared region to the visible region, and show extremely high reflectance for them, and also because, among many kinds of white scatterers, these white scatterers are resistant to high temperatures and maintain high reflectance even in a temperature range of 2300K or higher, in which temperature range the filament sufficiently emits lights.
  • Particles of the white scatterer desirably have a particle diameter not smaller than 50 nm and not larger than 50 ⁇ m. Shape of the particles is desirably a shape that allows a large filling factor from the viewpoint of light scattering efficiency. If the method for coating the substrate with the white scatterer is taken into consideration, the white scatterer is desirably in the shape of a spherical particle of good symmetry.
  • the white scatterer is further preferably subjected to at least one of a surface dangling bond removing treatment and a surface crystal defect restoring treatment.
  • an impurity element doped in the white scatterer can be used.
  • the impurity element for example, Ce, Eu, Mn, Ti, Sn, Tb, Au, Ag, Cu, Al, Ni, W, Pb, As, Tm, Ho, Er, Dy, Pr, and so forth can be used.
  • Doping concentration of the impurity element in the white scatterer is set to be, for example, 0.0001 to 10%.
  • the doping method there can be used a method of mixing the white scatterer and any of these impurity elements, and allowing a solid phase reaction in the mixture (by sintering the mixture) to attain the doping, or a method of dissolving oxide of the white scatterer and the impurity in concentrated nitric acid, coprecipitating them with an oxalate, and sintering the precipitates.
  • the visible light-absorbing material it is also possible to use metal particles.
  • the metal particles there can be used, for example, particles of W, Ta, Mo, Au, Ag, Cu, Al, Ti, Ni, Co, Cr, Si, V, Mn, Fe, Nb, Ru, Pt, Pd, Hf, Y, Zr, Re, Os, Ir, and so forth. These metal particles preferably have a particle diameter not smaller than 2 nm and not larger than 5 ⁇ m. Addition concentration of the metal particles in the white scatterer is set to be, for example, 0.0001% to 10%.
  • the addition method there is used a method of mixing the white scatterer and any of these impurity elements, electrodepositing them, and then sintering them to allow growth of crystals of metal microparticles in the white scatterer, or a method of injecting ions of any of the aforementioned metals into the white scatterer by using an ion implantation apparatus, and then sintering them to allow growth of crystals of metal microparticles in the white scatterer.
  • the metal particles added to the white scatterer can control absorption wavelength and absorption amount of lights of visible region to be absorbed according to type of the metal and particle diameter, like stained glass seen in churches, and therefore various kinds of absorption bands can be formed.
  • color of stained glass can be changed from pink to dark green by using microparticles of Au and changing the particle diameter thereof from 2 to 5 nm, and in the physical sense, this phenomenon is caused by change of color of transmitting lights induced by the localized resonance absorption effect for lights (complementary color) exerted at the surfaces of the metal microparticles. That is, the microparticles having a small particle size absorb lights of short wavelengths, and those having a larger particle size absorb lights of longer wavelengths.
  • the white scatterer to which the metal microparticles are added absorbs lights according to the same principle.
  • the surface of the substrate of the filament is preferably polished into a mirror surface. For example, it preferably shows a reflectance of 90% or higher for infrared lights of a wavelength of 4000 nm or longer. If the reflectance is 90% or higher for infrared lights including those of further shorter wavelengths, for example, wavelengths of 1000 nm or longer, further improvement of the luminous efficiency can be expected, and therefore such a characteristic is more preferred.
  • the surface of the substrate preferably satisfies at least one of the following conditions: center line average height (Ra) of 1 ⁇ m or smaller, maximum height (Rmax) of 10 ⁇ m or smaller, and ten-point average roughness (Rz) of 10 ⁇ m or smaller.
  • the filament for light sources of the present invention efficiently emits visible lights when it is heated by supply of an electric current, or the like.
  • the working principle thereof will be explained below on the basis of the Kirchhoff's law for black body radiation.
  • Loss of energy from the input energy induced by a material (filament in this case) in an equilibrium state under conditions of no natural convection heat transfer (for example, in vacuum) is calculated in accordance with the following equation (1).
  • P(total) represents total input energy
  • P(conduction) represents energy lost through the lead wires for supplying electric current to the filament
  • P(radiation) represents energy lost from the filament due to radiation of light to the outside at the heated temperature.
  • the energy lost from the lead wires becomes as low as only about 5%, and the remaining energy corresponding to 95% or more of the input energy is lost due to the light radiation to the outside. And therefore almost all the input electric energy can be converted into light.
  • visible light components of radiation lights radiated from a conventional general filament consist of only about 10% as shown in FIG. 1 , and most of them consist of infrared radiation components. Therefore, such a filament as it is cannot serve as an efficient visible light source.
  • Equation (1) The term of P(radiation) in the aforementioned equation (1) can generally be described as the following equation (2).
  • ⁇ ( ⁇ ) is emissivity for each wavelength
  • the term of ⁇ ⁇ 5 /(exp( ⁇ / ⁇ T) ⁇ 1) represents the Planck's law of radiation
  • 3.747 ⁇ 10 8 W ⁇ m 4 /m 2
  • 1.4387 ⁇ 10 4 ⁇ mK.
  • the relation of ⁇ ( ⁇ ) and the reflectance R( ⁇ ) is described as the equation (3) according to the Kirchhoff's law.
  • the white scatterer layer having the characteristics that it shows no absorption and extremely high reflectance for a wide wavelength range from the infrared region to the visible region (that is, a characteristic of showing extremely low emissivity for a wide wavelength range from the infrared region to the visible region), the radiation thereof can be suppressed for the infrared region to the visible region, even when the filament is heated.
  • the present invention in order to improve the radiation efficiency of the filament for the visible region with suppressing the radiation for the infrared region in order to obtain favorable visible luminous efficiency, it is necessary to decrease the reflectance (increase the emissivity) for the visible region (refer to the equation (3)).
  • impurity doping methods used in the fluorescent substance techniques and so forth are applied to the white scatterer.
  • a technique of adding metal microparticles is used. An absorption band of the white scatterer is thereby generated for the visible region, and a filament showing high visible luminous efficiency can be realized.
  • the following method can be used.
  • particles of a white scatterer for example, lutetia (Lu 2 O 3 )
  • a white scatterer for example, lutetia (Lu 2 O 3 )
  • spherical lutetia (Lu 2 O 3 ) particles having a particle diameter of 50 nm to 50 ⁇ m are prepared as an example.
  • This white scatterer is doped with Ce at a concentration of 1% by the solid phase reaction method.
  • cellulose nitrate is mixed with the white scatterer as a binder, and the mixture is dispersed in a mixed solution of water and polyvinyl alcohol to obtain slurry.
  • This white scatterer in the form of slurry is applied to surface of a filament substrate (for example, W (tungsten)) of a desired shape (for example, wire) separately prepared, and then they are sintered at a predetermined temperature, for example, 400° C. or higher, in an oxidizing atmosphere.
  • the binder is thereby burned, and the filament can be coated with the white scatterer layer doped with the impurities.
  • the filament can also be coated with the white scatterer layer doped with impurities by the impact-sintering coating method, in which the white scatterer particles are accelerated and collided to the filament, and instant sintering coating is realized by the impact of the collision.
  • a W filament (wire of ⁇ 2 mm) mirror-polished so that the surface thereof satisfied at least one of the following requirements concerning surface roughness: center line average height (Ra) of 1 ⁇ m or smaller, maximum height (Rmax) of 10 ⁇ m or smaller, and ten-point average roughness (Rz) of 10 ⁇ m or smaller.
  • Ra center line average height
  • Rmax maximum height
  • Rz ten-point average roughness
  • Wavelength dependencies of reflectance and emmisivity (2500K) of a filament obtained by covering the mirror-polished W filament shown in FIG. 3 (substrate) with a white scatterer (Lu 2 O 3 ) layer not doped with impurities and not added with metal particles were obtained by simulation and experiment, and the results are shown in FIG. 4 .
  • this filament shows extremely high reflectance as high as continuously about 1, and emmissivity of substantially 0 for the ultraviolet region, visible region, and infrared region, because of the action of the white scatterer layer. Therefore, the filament of which characteristics are shown in FIG. 4 shows a low visible luminous efficiency as low as 3.1 lm/W.
  • wavelength dependency of reflectance and wavelength dependency of radiation efficiency (radiation spectrum, 2500K) of a filament obtained by covering the mirror-polished W filament shown in FIG. 3 (substrate) with a white scatterer (Lu 2 O 3 ) layer doped with about 1% of Ce impurities in a thickness of 100 ⁇ m were obtained by simulation and experiment, and the results are shown in FIG. 5 .
  • FIG. 5 there was generated a band where the reflectance is close to 0 for the visible region around 550 nm, which corresponds to the peak of the luminosity curve, due to the doping with the Ce impurities. The radiation efficiency is thereby increased for the visible region.
  • the filament of the present invention can provide an extremely high visible luminous efficiency of 133.5 lm/W, because it is coated with the white scatterer of which reflectance for the visible region is reduced. This visible luminous efficiency corresponds to approximately 10 times of the efficiency of the conventional incandescent light bulbs.
  • the white scatterer In the white scatterer, OH groups (water) adsorbed on the surface and surface crystal defects (dangling bonds) cause significant absorption for the infrared region as shown in FIG. 6 to cause reduction of reflectance, which leads to reduction of the visible luminous efficiency. Therefore, the white scatterer is desirably subjected to treatments for removing OH groups and crystal defects from the surface of the white scatterer.
  • treatments for removing OH groups and crystal defects widely known methods can be used (refer to M. Hudicky et al., Chemistry of Organic Fluorine Compounds, 2 nd ed., Ellis Horwood Ltd., 1976, as reference).
  • a method of washing white scatterer particles with NH 4 F (buffered hydrofluoric acid) or the like to replace H of the OH group with F can be used. Then, if they are sintered at a high temperature of 1000° C. or higher in vacuum or an oxidizing atmosphere, OF groups are removed, and the crystal defects are restored. By performing a series of these operations, the reflectance can be gradually improved as shown in FIG. 6 .
  • the alternate long and short dash line mentioned in FIG. 6 represents the infrared reflection spectrum of the white scatterer particles obtained by repeatedly performing the aforementioned operations.
  • the reflectance for the infrared region of 99% of the filament of which characteristics are shown in FIG. 5 not subjected to the treatments can be increased to 99.9%.
  • a white scatterer subjected to the treatments are also shown in FIG. 7 .
  • the visible luminous efficiency at 2500K of the filament of which characteristics are shown in FIG. 7 is 168.7 lm/W, and it can be seen that the visible luminous efficiency can be significantly increased from the visible light luminous efficiency of 133.5 lm/W of the filament of which characteristics are shown in FIG. 5 .
  • the white scatterer layer it is desirable to optimize thickness of the white scatterer layer to which impurities are doped or metal particles are added in consideration of the following points. That is, if the substrate is coated with the white scatterer layer, the surface area S of the filament increases from the surface area of the substrate in a white scatterer layer thickness-dependent manner.
  • the product of the emissivity ⁇ for the infrared region and the surface area S corresponds to the energy loss (energy leakage in the infrared region).
  • the emissivity for the infrared region of the white scatterer layer is close to 0, but is not completely 0.
  • the particle diameter and the thickness of the white scatterer are optimized by using the light scattering theory, i.e., light diffusion equation.
  • n(r, t) represents light intensity in the white scatterer at an arbitrary time
  • D represents diffusion coefficient
  • ⁇ a represents time of decay due to absorption in a sample
  • l* represents mean free path
  • c represents the speed of light.
  • the transmissivity T is 0.1%, it can be eventually determined that the thickness of the white scatterer L should be 50 ⁇ m or larger from the aforementioned equation (6). In this case, it is determined by theoretical calculation that it is more advantageous to choose a smaller particle radius of the white scatterer in the particle radius range of from 50 nm to 1 ⁇ m.
  • a smaller particle diameter of the white scatterer makes it more difficult to remove the OH groups (water) adsorbed on the surface of the white scatterer and the crystal defects (dangling bonds) on the surface. Therefore, in order to obtain a white scatterer showing high reflectance and having a sufficient purity and a small particle diameter, many times of washing, sintering, and defect restoration operation are required.
  • FIG. 8 shows a broken sectional view of the incandescent light bulb using such a filament as described in the aforementioned example.
  • the incandescent light bulb 1 is constituted with a translucent gastight container 2 , a filament 3 disposed in the inside of the translucent gastight container 2 , and a pair of lead wires 4 and 5 electrically connected to the both ends of the filament 3 and supporting the filament 3 .
  • the translucent gastight container 2 is constituted with, for example, a glass bulb.
  • the inside of the translucent gastight container 2 is maintained to be a high vacuum state of 10 ⁇ 1 to 10 ⁇ 6 Pa.
  • O 2 , H 2 , a halogen gas, an inert gas, or a mixed gas of these is introduced into the inside of the translucent gastight container 2 at a pressure of 10 6 to 10 ⁇ 1 Pa, sublimation and degradation of the visible light reflectance-reducing film formed on the filament are suppressed, and therefore the lifetime-prolonging effect can be expected, as in the conventional halogen lamps.
  • a base 9 is adhered to a sealing part of the translucent gastight container 2 .
  • the base 9 comprises a side electrode 6 , a center electrode 7 , and an insulating part 8 , which insulates the side electrode 6 and the center electrode 7 .
  • One end of the lead wire 4 is electrically connected to the side electrode 6
  • one end of the lead wire 5 is electrically connected to the center electrode 7 .
  • the filament 3 is the filament of the aforementioned example, and has a structure that the substrate in the form of wire is wound in a spiral shape, and coated with the white scatterer layer doped with impurities or added with metal particles.
  • the filament 3 shows extremely high reflectance from the ultraviolet region to the infrared region, and low reflectance for the visible region.
  • high visible luminous efficiency luminous efficiency
  • the present invention radiation for the infrared region can be suppressed, and as a result, input electric power-to-visible light conversion efficiency can be increased. Therefore, an inexpensive and efficient energy-saving electric bulb for illumination can be provided.
  • the filament of the present invention can also be used for purposes other than incandescent light bulbs.
  • the white scatterer with impurities so that the reflectance is reduced for the near infrared region (0.8 to 2 ⁇ m) (for example, doping with Er)
  • it can be used as an electric wire for heaters, electric wire for welding processing, electron source of thermoelectronic emission (X-ray tube, electron microscope, etc.), and so forth.
  • the filament can be efficiently heated to high temperature with a little input power because of the infrared light radiation suppressing action (in particular, suppression of the infrared light radiation at longer wavelength), and therefore the energy efficiency can be improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Optical Elements Other Than Lenses (AREA)
US14/368,795 2011-12-26 2012-12-20 Light source device and filament Abandoned US20140361675A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011284041A JP5964581B2 (ja) 2011-12-26 2011-12-26 白熱電球
JP2011-284041 2011-12-26
PCT/JP2012/083089 WO2013099760A1 (ja) 2011-12-26 2012-12-20 光源装置、および、フィラメント

Publications (1)

Publication Number Publication Date
US20140361675A1 true US20140361675A1 (en) 2014-12-11

Family

ID=48697249

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/368,795 Abandoned US20140361675A1 (en) 2011-12-26 2012-12-20 Light source device and filament

Country Status (3)

Country Link
US (1) US20140361675A1 (enExample)
JP (1) JP5964581B2 (enExample)
WO (1) WO2013099760A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140292188A1 (en) * 2011-10-27 2014-10-02 Stanley Electric Co., Ltd. Incandescent bulb, filament, and method for manufacturing filament
JP2015138638A (ja) * 2014-01-22 2015-07-30 スタンレー電気株式会社 赤外光源
US9252007B2 (en) 2012-09-21 2016-02-02 Stanley Electric Co., Ltd. Light source device, method for manufacturing the same and filament

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6302651B2 (ja) * 2013-11-28 2018-03-28 スタンレー電気株式会社 白熱電球およびフィラメント
CN104808436B (zh) * 2014-01-27 2017-11-24 太阳油墨(苏州)有限公司 碱显影型感光性树脂组合物、干膜和固化物、以及印刷电路板
JP6371075B2 (ja) * 2014-02-21 2018-08-08 スタンレー電気株式会社 フィラメント

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3973155A (en) * 1975-01-31 1976-08-03 Westinghouse Electric Corporation Incandescent source of visible radiations
US20070228951A1 (en) * 2006-03-31 2007-10-04 General Electric Company Article incorporating a high temperature ceramic composite for selective emission

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56145652A (en) * 1980-04-11 1981-11-12 Rikuun Denki Kk Bulb filament
JPS57174853A (en) * 1981-04-21 1982-10-27 Masamitsu Kawakami Method of producing ceramic coating type bulb filament
JPH10289689A (ja) * 1997-04-11 1998-10-27 Sony Corp ランプ電極の構造
JP2002222638A (ja) * 2001-01-26 2002-08-09 Oshino Denki Seisakusho:Kk ガス等のセンサー・濃度検知器などに用いる赤外線放射光源
ITTO20030166A1 (it) * 2003-03-06 2004-09-07 Fiat Ricerche Emettitore ad alta efficienza per sorgenti di luce ad incandescenza.
JP5567390B2 (ja) * 2009-11-11 2014-08-06 スタンレー電気株式会社 可視光源
JP5506514B2 (ja) * 2010-04-07 2014-05-28 スタンレー電気株式会社 赤外光源

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3973155A (en) * 1975-01-31 1976-08-03 Westinghouse Electric Corporation Incandescent source of visible radiations
US20070228951A1 (en) * 2006-03-31 2007-10-04 General Electric Company Article incorporating a high temperature ceramic composite for selective emission

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140292188A1 (en) * 2011-10-27 2014-10-02 Stanley Electric Co., Ltd. Incandescent bulb, filament, and method for manufacturing filament
US9252006B2 (en) * 2011-10-27 2016-02-02 Stanley Electric Co., Ltd. Incandescent bulb, filament, and method for manufacturing filament
US9252007B2 (en) 2012-09-21 2016-02-02 Stanley Electric Co., Ltd. Light source device, method for manufacturing the same and filament
JP2015138638A (ja) * 2014-01-22 2015-07-30 スタンレー電気株式会社 赤外光源

Also Published As

Publication number Publication date
WO2013099760A1 (ja) 2013-07-04
JP2013134873A (ja) 2013-07-08
JP5964581B2 (ja) 2016-08-03

Similar Documents

Publication Publication Date Title
US20140361675A1 (en) Light source device and filament
JP6427721B1 (ja) 積層ルミネッセンス集光器
US9214330B2 (en) Light source device and filament
RU2686192C2 (ru) Источник света
KR102432725B1 (ko) 안정적인 유속 출력 대 온도를 갖는 백색 인광체 변환 led
EP3891434B1 (en) Light generating system comprising an elongated luminescent body
US6906475B2 (en) Fluorescent lamp and high intensity discharge lamp with improved luminous efficiency
US9275846B2 (en) Light source device and filament
TWI497560B (zh) Ultraviolet ray irradiation apparatus, ultraviolet irradiation method, and ultraviolet ray irradiation apparatus
JP2005529461A (ja) 蛍光灯およびその製造方法
CN1527355A (zh) 带红外线反射涂层和带反射镜及红外线反射涂层的卤素灯
JP2003051284A (ja) 蛍光ランプおよび照明器具
US9252006B2 (en) Incandescent bulb, filament, and method for manufacturing filament
TW201225152A (en) Fluorescent lamp
JP6153734B2 (ja) 光源装置
JP5515141B2 (ja) 蛍光体および蛍光ランプ
CN1894765A (zh) 低压汞蒸气放电灯
JP5515142B2 (ja) 蛍光体および蛍光ランプ
JP6239839B2 (ja) 光源装置、および、フィラメント
JP2014112477A (ja) 光源装置およびフィラメント
JP2015185221A (ja) フィラメントおよび光源装置
JP2007026675A (ja) 光照射装置、光照射装置用ランプおよび光照射方法
JP2014143129A (ja) フィラメントの製造方法
CN101017765B (zh) 荧光灯及照明装置
JP2014164866A (ja) フィラメント、および、その製造方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: STANLEY ELECTRIC CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MATSUMOTO, TAKAHIRO;REEL/FRAME:033181/0178

Effective date: 20140507

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION