US20140283992A1 - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- US20140283992A1 US20140283992A1 US14/299,038 US201414299038A US2014283992A1 US 20140283992 A1 US20140283992 A1 US 20140283992A1 US 201414299038 A US201414299038 A US 201414299038A US 2014283992 A1 US2014283992 A1 US 2014283992A1
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- Prior art keywords
- substrate
- chemical solution
- unit
- held
- processing
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- 239000000758 substrate Substances 0.000 title claims abstract description 522
- 239000000126 substance Substances 0.000 claims abstract description 298
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000002562 thickening agent Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims description 58
- 238000006243 chemical reaction Methods 0.000 description 51
- 230000002093 peripheral effect Effects 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 229910001873 dinitrogen Inorganic materials 0.000 description 28
- 238000000034 method Methods 0.000 description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 238000005192 partition Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 239000001768 carboxy methyl cellulose Substances 0.000 description 3
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 3
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229920000609 methyl cellulose Polymers 0.000 description 3
- 239000001923 methylcellulose Substances 0.000 description 3
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Definitions
- This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates.
- substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.
- Japanese Published Unexamined Patent Application No. 2007-318016 discloses a substrate processing apparatus of the single-substrate processing type that performs bevel etching.
- This substrate processing apparatus includes a spin chuck that horizontally holds and rotates a substrate around a vertical axis and a lower-surface nozzle that faces the central portion of a lower surface of the substrate held by the spin chuck.
- a chemical solution discharged from the lower-surface nozzle is supplied to the central portion of the lower surface of the substrate being rotated. Thereafter, the chemical solution supplied thereto spreads outwardly along the lower surface of the substrate by the rotation of the substrate, and turns to the peripheral portion of an upper surface of the substrate while proceeding along the peripheral end surface of the substrate. As a result, the chemical solution is supplied to the whole area of the peripheral portion of the upper surface of the substrate.
- U.S. Patent Application Publication No. 2006/0151008 A1 discloses a cleaning method for cleaning a substrate by use of a highly viscous liquid.
- a highly viscous liquid is supplied to an upper surface of a substrate. Thereafter, the substrate starts being rotated. The liquid supplied thereto moves outwardly on the substrate by the rotation of the substrate. As a result, the highly viscous liquid is discharged from the substrate. Foreign matters adhering to the upper surface of the substrate are discharged from the substrate along with the highly viscous liquid. As a result, the foreign matters are removed from the substrate.
- the substrate can be allowed to hold the chemical solution because the chemical solution has high viscosity. Therefore, the consumption of the chemical solution can be reduced. Additionally, foreign matters adhering to the substrate can be lifted off from the substrate along with a portion of the substrate by allowing the substrate and the chemical solution to react together and hence dissolving the portion of the substrate. Therefore, the foreign matters can be reliably removed from the substrate.
- the chemical solution contiguous to the substrate is not replaced by a new chemical solution, and therefore there is a case in which much time is consumed to allow the substrate and the chemical solution to sufficiently react together, and hence a satisfactory processing speed cannot be secured.
- the substrate is located at that place (i.e., the position to which the chemical solution has been supplied) until the substrate and the chemical solution sufficiently react together, and, if so, a highly viscous chemical solution cannot be supplied to a subsequent substrate until the substrate to which the chemical solution has been supplied is taken out. Therefore, throughput (i.e., the number of substrates processed per unit time) will be decreased.
- a chemical solution containing an etching component and a thickening agent is supplied to a substrate held by the first substrate holding unit in the first processing chamber. Thereafter, the substrate is transferred by the substrate transfer unit from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate. This operation is repeatedly performed, and a plurality of substrates on each of which the chemical solution is held are carried into the second processing chamber.
- the substrates carried into the second processing chamber are held by the second substrate holding unit in a state of holding the chemical solution.
- the substrates held by the second substrate holding unit are carried out of the second processing chamber in order of arrival of a stay time in the second processing chamber at a predetermined time. The substrates are processed without hindrance in this way.
- the substrate to which the chemical solution has been supplied in the first processing chamber is transferred from the first processing chamber to the second processing chamber in a state of holding the chemical solution, and is held in the second processing chamber during a predetermined time in a state of holding the chemical solution. Therefore, a period of time during which the substrate and the chemical solution react to each other is secured sufficiently. Additionally, the reaction of the substrate and the chemical solution to each other is also performed outside the first processing chamber, and therefore the chemical solution can be supplied to a subsequent substrate in the first processing chamber during the progression of the reaction of the substrate and the chemical solution to each other. Therefore, a decrease in throughput (i.e., the number of substrates to be processed per unit time) can be restrained or prevented.
- the substrate processing apparatus may further include a third processing chamber, a third substrate holding unit that holds a substrate in the third processing chamber, and a rinsing liquid supply unit that supplies a rinsing liquid to a substrate held by the third substrate holding unit.
- the substrate transfer unit may be arranged to transfer a substrate from the second processing chamber to the third processing chamber.
- a substrate held in the second processing chamber during a predetermined time is transferred by the substrate transfer unit from the second processing chamber to the third processing chamber.
- a substrate that has satisfactorily reacted to a chemical solution in the second processing chamber is carried into the third processing chamber.
- a rinsing liquid is supplied to the substrate held by the third substrate holding unit in the third processing chamber.
- the chemical solution held on the substrate is rinsed away by the rinsing liquid.
- the chemical solution supply unit may be arranged to supply the chemical solution to the whole area of the major surface of the substrate held by the first substrate holding unit.
- the chemical solution supply unit may be arranged to partially supply the chemical solution to the major surface of the substrate held by the first substrate holding unit. If the substrate is a substrate (for example, a bare wafer) that does not have a thin film on its surface layer, the major surface of the substrate is a surface of the substrate itself. If the substrate is a substrate that has a thin film on its surface layer, the major surface of the substrate may be an outer surface of the thin film, or may be an outer surface of the bed of the thin film.
- the chemical solution is partially supplied to the major surface of the substrate, the consumption of the chemical solution can be made smaller than when the chemical solution is supplied to the whole area of the major surface of the substrate.
- Another embodiment of the present invention provides a substrate processing method including a chemical solution supply step of supplying a chemical solution containing an etching component and a thickening agent to a substrate and allowing the substrate to hold the chemical solution, a transfer step of transferring the substrate in a state in which the chemical solution is held on the substrate after the chemical solution supply step is performed, and a reaction processing step of promoting a reaction of the substrate on which the chemical solution is held and the chemical solution to each other after the transfer step is performed.
- the etching component may be a mixture of hydrofluoric acid and hydrogen peroxide or a mixture of ammonium hydroxide and hydrogen peroxide.
- the thickening agent may be one or more selected from methylcellulose, carboxymethyl cellulose, polyethylene glycol, sodium polyacrylate, and polyvinyl alcohol. According to this method, the same effect as the above-mentioned effect can be fulfilled.
- FIG. 1 is a illustrated plan view showing a layout of a substrate processing apparatus according to a first embodiment of the present invention.
- FIG. 5 is a schematic view showing a structure of a reaction unit according to the first embodiment of the present invention.
- FIG. 6 is a schematic view showing a structure of a rinse unit according to the first embodiment of the present invention.
- FIG. 10 is a view for describing one example of substrate processing performed by the substrate processing apparatus according to the second embodiment of the present invention.
- FIG. 1 is a illustrated plan view showing a layout of a substrate processing apparatus 1 according to a first embodiment of the present invention.
- the chemical solution nozzle 9 is connected to a chemical solution supply pipe 16 with a chemical solution valve 15 interposed therein.
- the supply of a chemical solution to the chemical solution nozzle 9 is controlled by opening and closing the chemical solution valve 15 .
- a nozzle moving mechanism 17 moves the chemical solution nozzle 9 between a processing position (shown in FIG. 2 to FIG. 4 ) and a waiting position.
- the processing position is a position at which a chemical solution discharged from the chemical solution nozzle 9 is supplied to the upper surface of a substrate W held by the first spin chuck 8
- the waiting position is a position away from the first spin chuck 8 .
- the covering member 10 is large enough to cover at least one portion of the peripheral portion of the upper surface of the substrate W.
- the covering member 10 may be larger than the substrate W when viewed planarly, or may be smaller than the substrate W when viewed planarly.
- the covering member 10 is a plate-like member smaller than the substrate W when viewed planarly.
- the covering member 10 has a flat lower surface.
- a moving mechanism (not shown) moves the covering member 10 between a processing position (shown in FIG. 2 to FIG. 4 ) and a waiting position.
- the processing position is a position at which the lower surface of the covering member 10 is brought close to the upper surface of the substrate W and at which a portion of the peripheral portion of the upper surface of the substrate W is covered with the covering member 10 .
- the waiting position is a position away from the first spin chuck 8 .
- the processing position of the covering member 10 is disposed inside the processing position of the chemical solution nozzle 9 (in a direction approaching the rotational axis of the substrate W).
- the processing position of the covering member 10 and the processing position of the chemical solution nozzle 9 are near each other. Therefore, the covering member 10 is placed inside the chemical solution nozzle 9 , and the chemical solution nozzle 9 and the covering member 10 are near each other in a state in which the chemical solution nozzle 9 and the covering member 10 are in their respective processing positions.
- the chemical solution nozzle 9 may be arranged to be held by the covering member 10 and be moved together with the covering member 10 .
- the nitrogen gas nozzle 11 is connected to a nitrogen gas supply pipe 19 with a nitrogen gas valve 18 interposed therein.
- the supply of nitrogen gas to the nitrogen gas nozzle 11 is controlled by opening and closing the nitrogen gas valve 18 .
- the nitrogen gas nozzle 11 is held by the covering member 10 . Therefore, the nitrogen gas nozzle 11 moves together with the covering member 10 .
- the nitrogen gas nozzle 11 is arranged so that, when nitrogen gas is discharged in a state in which the covering member 10 is in the processing position, nitrogen gas discharged therefrom flows outwardly (in a direction receding from the rotational axis of the substrate W) between the lower surface of the covering member 10 and the upper surface of the substrate W.
- the nitrogen gas nozzle 11 may be held independently of the covering member 10 without being held by the covering member 10 .
- Pure water (DIW: Deionized water), carbonated water, electrolyzed ion water, hydrogen water, ozone water, or aqueous hydrochloric acid of dilute concentration (e.g., about 10 to 100 ppm) can be mentioned as the rinsing liquid supplied to the rinsing liquid nozzle 32 .
- DIW Deionized water
- carbonated water electrolyzed ion water
- hydrogen water hydrogen water
- ozone water ozone water
- aqueous hydrochloric acid of dilute concentration e.g., about 10 to 100 ppm
- the control device 4 allows the indexer robot IR to carry out unprocessed substrates W contained in the carrier C. Thereafter, the control device 4 moves the substrates W carried out of the carrier C from the indexer robot IR to the center robot CR. Thereafter, the control device 4 allows the center robot CR to carry the substrate W delivered to the center robot CR into the chemical solution supply unit 7 a . As a result, each substrate W is placed on the first spin chuck 8 as shown in FIG. 7 . When the substrate W is placed on the first spin chuck 8 , the control device 4 locates the chemical solution nozzle 9 and the covering member 10 at their respective waiting positions.
- the control device 4 rotates the substrate W while discharging the chemical solution from the chemical solution nozzle 9 . Therefore, the chemical solution discharged from the chemical solution nozzle 9 is supplied to the peripheral portion of the upper surface of the substrate W over the whole circumference. As a result, the chemical solution is supplied to the whole area of the peripheral portion of the upper surface of the substrate W.
- the chemical solution has high viscosity, and therefore the chemical solution supplied from the chemical solution nozzle 9 to the substrate W hardly moves from the solution-supplied position and stays at this position. Therefore, a state in which the chemical solution is held in the whole area of the peripheral portion of the upper surface of the substrate W is maintained.
- the peripheral portion of the upper surface of the substrate W is etched by contact with the chemical solution.
- the control device 4 allows the nitrogen gas nozzle 11 to discharge nitrogen gas while a chemical solution is being discharged from the chemical solution nozzle 9 . Therefore, the chemical solution has high volatility, and, even if gas of the chemical solution is generated between the chemical solution nozzle 9 and the substrate W, this gas is restrained or prevented from moving inwardly by nitrogen gas flowing outwardly. Especially near the chemical solution nozzle 9 , the chemical solution and air are in contact with each other between the chemical solution nozzle 9 and the chemical solution held on the substrate W, in addition to the chemical solution held on the substrate W. Therefore, the area in which the chemical solution and air are in contact with each other near the chemical solution nozzle 9 is greater than in other regions, and chemical solution gas is generated more easily than in other regions.
- the covering member 10 is disposed near the chemical solution nozzle 9 , and nitrogen gas is supplied between the covering member 10 and the substrate W, and, as a result, a region inside the peripheral portion of the upper surface of the substrate W can be efficiently restrained or prevented from being exposed to the chemical solution gas.
- the control device 4 When a predetermined period of time elapses after the nitrogen gas valve 18 and the chemical solution valve 15 have been opened, the control device 4 allows the nitrogen gas valve 18 and the chemical solution valve 15 to be closed, so that the chemical solution and the nitrogen gas stop being discharged. Furthermore, the control device 4 controls the spin motor 14 , and allows the first spin chuck 8 to stop the rotation of the substrate W. Thereafter, the control device 4 allows the center robot CR to carry the substrate W held by the first spin chuck 8 out of the chemical solution supply unit 7 a . Thereafter, the control device 4 allows the center robot CR to carry the substrate W carried out of the chemical solution supply unit 7 a into the reaction unit 7 b .
- the substrate W to which the chemical solution has been supplied is transferred from the chemical solution supply unit 7 a to the reaction unit 7 b in a horizontal posture. Accordingly, the substrate W is transferred from the chemical solution supply unit 7 a to the reaction unit 7 b in a state in which the chemical solution is held on the substrate W.
- a reaction process in which the reaction of the substrate W and the chemical solution to each other is promoted is performed in a state in which the chemical solution is held on the substrate W.
- the control device 4 allows the center robot CR and any one of the substrate holding members 24 to horizontally hold the substrate W carried out of the chemical solution supply unit 7 a .
- the substrate W is horizontally held by the substrate holding member 24 in a state in which the chemical solution is held on the peripheral portion of the upper surface of the substrate W.
- the substrate W held on the substrate holding member 24 is held in the reaction unit 7 b during a predetermined time.
- the reaction of the substrate W and the chemical solution to each other progresses during this predetermined time, and the peripheral portion of the upper surface of the substrate W is etched. Therefore, if foreign matters adhere to the peripheral portion of the upper surface of the substrate W, the foreign matters are lifted off from the substrate W along with a portion of the substrate W, or the chemical solution dissolves the foreign matters, so that the foreign matters are removed from the substrate W.
- the control device 4 may allow the heater 26 to heat the substrate W and the chemical solution held on the substrate W while the substrate W is being held in the reaction unit 7 b . If the activity of the chemical solution becomes higher correspondingly to an increase in temperature, the processing time of the substrate W by use of the chemical solution can be shortened by heating the chemical solution and the substrate W.
- the ordinary processing time is 3 minutes to 12 hours, preferably 10 minutes to 2 hours, and the processing temperature is 15 to 100° C., preferably 20 to 60° C., depending on the kind of foreign matters and the degree of adhesion.
- Only the carry-in operation of substrates W into the reaction unit 7 b is performed at an initial step at which substrates W start being processed by the substrate processing apparatus 1 .
- the control device 4 allows a plurality of substrates W to be carried out in order of arrival from a substrate W whose stay time in the reaction unit 7 b has first arrived at a predetermined time.
- the control device 4 gives instructions to alternately and repeatedly perform a carry-in operation in which a single substrate W is carried into the reaction unit 7 b by the center robot CR and a carry-out operation in which a single substrate W held in the reaction unit 7 b during a predetermined time is carried out of the reaction unit 7 b by the center robot CR. Thereafter, according to instructions given by the control device 4 , the substrate W carried out of the reaction unit 7 b is carried into the rinse unit 7 c by the center robot CR. As a result, as shown in FIG. 7 , the substrate W is placed on the third spin chuck 31 . When the substrate W is placed on the third spin chuck 31 , the control device 4 allows the rinsing liquid nozzle 32 to be located at the waiting position.
- a rinsing liquid for example, deionized water
- a rinsing process for rinsing away the chemical solution held on the peripheral portion of the upper surface of the substrate W is performed.
- the control device 4 controls the spin motor 14 , and allows the third spin chuck 31 to start rotating the substrate W.
- the control device 4 gives instructions to open the rinsing liquid valve 34 and to discharge a rinsing liquid from the rinsing liquid nozzle 32 toward a central portion of the upper surface of the substrate W while rotating the substrate W by the third spin chuck 31 .
- the rinsing liquid discharged from the rinsing liquid nozzle 32 is supplied to the central portion of the upper surface of the substrate W, and spreads outwardly along the upper surface of the substrate W while receiving a centrifugal force produced by the rotation of the substrate W.
- the rinsing liquid is supplied to the whole area of the upper surface of the substrate W, and the chemical solution held on the peripheral portion of the upper surface of the substrate W is rinsed away.
- foreign matters that have lifted off from the peripheral portion of the upper surface of the substrate W along with a portion of the substrate W by the reaction of the substrate W and the chemical solution to each other or foreign matters dissolved by the chemical solution are rinsed away by the rinsing liquid.
- the control device 4 closes the rinsing liquid valve 34 , and stops discharging the rinsing liquid from the rinsing liquid nozzle 32 .
- the control device 4 controls the spin motor 14 , and rotates the substrate W at a high rotational speed (for example, several thousand revolutions per minute (rpm)).
- a high rotational speed for example, several thousand revolutions per minute (rpm)
- rpm revolutions per minute
- the control device 4 controls the spin motor 14 , and stops the rotation of the substrate W by the third spin chuck 31 .
- the control device 4 allows the center robot CR to carry the substrate W held by the third spin chuck 31 out of the rinse unit 7 c.
- the control device 4 After the substrate W is carried out of the rinse unit 7 c , the control device 4 gives instructions to move the substrate W carried out of the rinse unit 7 c from the center robot CR to the indexer robot IR. Thereafter, the control device 4 allows the indexer robot IR to carry the substrate W delivered to the indexer robot IR into the carrier C. A series of process steps performed by the substrate processing apparatus 1 are ended in this way. The control device 4 gives instructions to repeatedly perform the above-mentioned operations and to process a plurality of substrates W one by one.
- a chemical solution containing an etching component and a thickening agent is supplied to a substrate W held by the first spin chuck 8 in the chemical solution supply unit 7 a (first chamber 12 ). Thereafter, the substrate W is transferred by the center robot CR from the chemical solution supply unit 7 a to the reaction unit 7 b (second chamber 25 ) in a state in which the chemical solution is held on the substrate W. This operation is repeatedly performed, and a plurality of substrates W on each of which the chemical solution is held are carried into the reaction unit 7 b .
- the substrates W carried into the reaction unit 7 b are held on a plurality of substrate holding members 24 , respectively, in a state of holding the chemical solution.
- the substrates W held on the substrate holding members 24 are carried out of the reaction unit 7 b in order of arrival of a stay time in the reaction unit 7 b at a predetermined time.
- the substrates W are processed without hindrance in this way.
- the viscosity of a chemical solution supplied to the substrate W is increased by adding a thickening agent.
- the flowability of a chemical solution is lowered by adding a thickening agent. Therefore, a state in which the substrate W is covered with a chemical solution is maintained even if the chemical solution does not continue being supplied to the substrate W. Therefore, the consumption of the chemical solution can be reduced. Additionally, the amount of the chemical solution to be wasted can be reduced by reducing the consumption of the chemical solution.
- an etching component is contained in the chemical solution, and therefore foreign matters, such as particles, adhering to a substrate W can be lifted off from the substrate W along with a portion of the substrate W, or foreign matters can be dissolved by the chemical solution. As a result, such foreign matters can be reliably removed from the substrate W. Additionally, the viscosity of the chemical solution is increased, and therefore the substrate W can be transferred in a state in which the chemical solution is held on the substrate W.
- a substrate W held in the reaction unit 7 b during a predetermined time is transferred from the reaction unit 7 b to the rinse unit 7 c by the center robot CR.
- a substrate W that has satisfactorily reacted to a chemical solution in the reaction unit 7 b is carried into the rinse unit 7 c .
- a rinsing liquid is supplied to the substrate W held by the third spin chuck 31 in the rinse unit 7 c .
- the chemical solution held on the substrate W is rinsed away by the rinsing liquid.
- the supply of the chemical solution, the reaction of the substrate W and the chemical solution to each other, and the removal of the chemical solution are performed in the different chambers, and therefore the structure in each of the chambers 12 , 25 , and 33 can be restrained or prevented from being complicated.
- the chemical solution is partially supplied to the upper surface of the substrate W.
- the chemical solution is supplied to the peripheral portion of the upper surface of the substrate W. Therefore, in this case, the consumption of the chemical solution can be made smaller than in a case in which the chemical solution is supplied to the whole area of the upper surface of the substrate W.
- the region into which the chemical solution is supplied is predetermined, and therefore the position to which the chemical solution is supplied is not required to be changed for each substrate W. Additionally, the chemical solution is not supplied to a place beyond the predetermined region, and therefore a region that has no need for the supply of the chemical solution can be restrained or prevented from being damaged by the chemical solution.
- the chemical solution has high viscosity, and therefore splashes of the chemical solution caused when the chemical solution is supplied to the substrate W are restrained. As a result, the chemical solution can be reliably restrained or prevented from being supplied to a region other than a desired region.
- a main difference between this second embodiment and the first embodiment mentioned above is that a foreign-matter measuring unit 40 that measures the position of foreign matters adhering to a substrate W is provided in a substrate processing apparatus 201 . Additionally, a chemical solution is supplied into a region determined for each substrate W (i.e., a region in which foreign matters are contained) in the second embodiment, whereas a chemical solution is supplied into a predetermined region (i.e., the peripheral portion of the upper surface of a substrate W) in the first embodiment.
- a predetermined region i.e., the peripheral portion of the upper surface of a substrate W
- FIG. 8 is a illustrated plan view showing a layout of the substrate processing apparatus 201 according to the second embodiment of the present invention.
- FIG. 9 is a schematic side view showing a structure of the foreign-matter measuring unit 40 according to the second embodiment of the present invention.
- the substrate processing apparatus 201 includes the foreign-matter measuring unit 40 that measures the position of foreign matters adhering to a substrate W in addition to the structure of the substrate processing apparatus 1 according to the first embodiment.
- the foreign-matter measuring unit 40 is disposed at a position that is accessible by the indexer robot IR.
- the indexer robot IR performs a carry-in operation for carrying substrates W into the foreign-matter measuring unit 40 and a carry-out operation for carrying substrates W out of the foreign-matter measuring unit 40 .
- the indexer robot IR transfers substrates W between the carrier C held by the carrier holding section 5 and the foreign-matter measuring unit 40 , and transfers substrates W between the foreign-matter measuring unit 40 and the center robot CR.
- the foreign-matter measuring unit 40 includes a fourth spin chuck 41 that horizontally holds and rotates a substrate W, a foreign-matter measuring device 42 (foreign-matter measuring unit) that measures the presence or absence of foreign matters and measures the position of foreign matters, and a fourth chamber 43 (measuring chamber) that contains the fourth spin chuck 41 .
- the fourth spin chuck 41 includes a disk-shaped spin base 13 that is rotatable around a vertical axis passing through the center of a substrate W while horizontally holding the substrate W and a spin motor 14 that rotates the spin base 13 around the vertical axis.
- the fourth spin chuck 41 may be a gripping-type chuck, or may be a vacuum-type chuck. In the second embodiment, the fourth spin chuck 41 is a gripping-type chuck.
- the foreign-matter measuring device 42 measures whether there are foreign matters on the upper surface of the substrate W, and measures the position of foreign matters with respect to the substrate W.
- a device including at least one of, for example, a particle counter, a total reflection X-ray fluorescence analyzer (TRXRF), an energy dispersive X-ray spectrometer (EDX), a scanning electron microscope (SEM), and an image recognition foreign-matter inspection device can be mentioned as the foreign-matter measuring device 42 .
- the foreign-matter measuring device 42 is a device that detects the presence or absence of foreign matters and detects the position of foreign matters by use of a laser beam.
- the foreign-matter measuring device 42 includes an irradiation head 44 that emits a laser beam and a head moving mechanism 45 that moves the irradiation head 44 .
- the irradiation head 44 is disposed in the fourth chamber 43 .
- the head moving mechanism 45 moves the irradiation head 44 so that a laser beam emitted from the irradiation head 44 moves between the center of the upper surface of the substrate W and the outer peripheral portion of the upper surface of the substrate W.
- the foreign-matter measuring device 42 detects the presence or absence of foreign matters on the substrate W by radiating a laser beam to the upper surface of the substrate W. Additionally, the foreign-matter measuring device 42 measures the position of foreign matters detected from the movement amount of the irradiation head 44 moved by the head moving mechanism 45 and from the rotational angle of the substrate W. In more detail, based on the movement amount of the irradiation head 44 moved by the head moving mechanism 45 , the foreign-matter measuring device 42 measures the distance from the center of the upper surface of the substrate W to foreign matters. Additionally, the foreign-matter measuring device 42 obtains the rotational angle of the substrate W (angle information) that is based on a notch or an orientation flat provided at the peripheral portion of the substrate W from the control device 4 .
- the foreign-matter measuring device 42 measures the position of foreign matters from the distance from the center of the upper surface of the substrate W to the foreign matters and from the rotational angle of the substrate W. Thereafter, the foreign-matter measuring device 42 outputs the position of the foreign matters to the control device 4 as positional information.
- the control device 4 controls the nozzle moving mechanism 17 (see FIG. 2 ), and gives instructions to supply a chemical solution into a region that contains foreign matters based on the positional information obtained from the foreign-matter measuring device 42 .
- the control device 4 gives instructions to supply a chemical solution into a region determined for each substrate W (range in which foreign matters are contained), not to supply a chemical solution into a predetermined region (i.e., to the peripheral portion of the upper surface of the substrate W) as in the first embodiment. Therefore, the processing position of the chemical solution nozzle 9 (see FIG. 2 ) in the second embodiment is not a fixed position but a fixed region in which a chemical solution discharged from the chemical solution nozzle 9 is supplied to any position on the upper surface of the substrate W.
- the fourth chamber 43 includes a fourth partition wall 47 having a fourth opening 46 and a fourth gate shutter 48 with which the fourth opening 46 is covered.
- the fourth gate shutter 48 is disposed outside the fourth partition wall 47 .
- the fourth gate opening-closing mechanism 49 is connected to the fourth gate shutter 48 .
- the fourth gate opening-closing mechanism 49 moves the fourth gate shutter 48 between a closed position at which the fourth opening 46 is closed by the fourth gate shutter 48 and an open position at which the fourth opening 46 is opened.
- the fourth gate shutter 48 is beforehand placed at the open position when the substrate W is carried into the fourth chamber 43 or when the substrate W is carried out of the fourth chamber 43 .
- the substrate W is carried into and out of the fourth chamber 43 in a state in which the fourth opening 46 is opened. Thereafter, the fourth gate shutter 48 is placed at the closed position, and the fourth opening 46 is closed by the fourth gate shutter 48 .
- FIG. 10 is a view for describing one example of processing the substrate W performed by the substrate processing apparatus 201 according to the second embodiment of the present invention. Hereinafter, reference is made to FIG. 8 and FIG. 10 .
- the control device 4 allows the indexer robot IR to carry out unprocessed substrates W contained in the carrier C. Thereafter, the control device 4 allows the indexer robot IR to carry the substrates W carried out of the carrier C into the foreign-matter measuring unit 40 . As a result, the substrate W is placed on the fourth spin chuck 41 . When the substrate W is placed on the fourth spin chuck 41 , the control device 4 allows the irradiation head 44 to recede from above the fourth spin chuck 41 .
- a chemical solution discharged from the chemical solution nozzle 9 is supplied to a portion (i.e., a region in which foreign matters are contained) of the upper surface of the substrate W (chemical solution supply process).
- the chemical solution has high viscosity, and therefore the chemical solution supplied from the chemical solution nozzle 9 to the substrate W hardly moves from the solution-supplied position and stays at this position. Therefore, a state in which the chemical solution is held at the portion of the upper surface of the substrate W is maintained.
- the portion (region in which foreign matters are contained) of the upper surface of the substrate W is etched by contact with the chemical solution.
- the substrate W placed in the chemical solution supply unit 7 a is carried out of the chemical solution supply unit 7 a by the center robot CR. Furthermore, the substrate W carried out of the chemical solution supply unit 7 a is carried into the reaction unit 7 b by the center robot CR.
- the foreign matters are lifted off from the substrate W along with the portion of the upper surface of the substrate W, or are dissolved by the chemical solution.
- the substrate W held in the reaction unit 7 b during the predetermined time is carried out of the reaction unit 7 b by the center robot CR. Thereafter, the substrate W carried out of the reaction unit 7 b is carried into the rinse unit 7 c by the center robot CR.
- a rinsing liquid is discharged from the rinsing liquid nozzle 32 toward the central portion of the upper surface of the substrate W held by the third spin chuck 31 in the same manner as in the first embodiment.
- the rinsing liquid is supplied to the whole area of the upper surface of the substrate W, and the chemical solution held on the upper surface of the substrate W is rinsed away (rinsing process).
- foreign matters lifted off from the upper surface of the substrate W along with a portion of the substrate W by the reaction of the substrate W and the chemical solution to each other or foreign matters dissolved by the chemical solution are rinsed away by the rinsing liquid.
- the foreign matters are removed from the substrate W, and the substrate W is cleaned. Thereafter, as shown in FIG. 10 , the rinsing liquid adhering to the substrate W is removed from the substrate W by the high-speed rotation of the substrate W, and the substrate W is dried (spin drying process).
- the substrate W is carried out of the rinse unit 7 c by the center robot CR. Thereafter, the substrate W carried out of the rinse unit 7 c is delivered from the center robot CR to the indexer robot IR.
- the indexer robot IR carries the already-processed substrate W received from the center robot CR into the carrier C held by the carrier holding section 5 . Thereby, the series of process steps performed by the substrate processing apparatus 201 are ended.
- the control device 4 gives instructions to repeatedly perform these operations and to process the plurality of substrates W one by one.
- the position of foreign matters adhering to the substrate W is measured by the foreign-matter measuring device 42 , and a chemical solution is supplied into a region in which foreign matters are contained. Therefore, a chemical solution is reliably supplied into a region in which foreign matters are contained, and foreign matters adhering to the substrate W are reliably removed. Additionally, a chemical solution is supplied only into a region in which foreign matters are contained, and therefore a region that has no need for the supply of a chemical solution can be restrained or prevented from being damaged by the chemical solution.
- foreign matters are measured by the foreign-matter measuring device 42 in the fourth chamber 43 .
- the measurement of foreign matters by the foreign-matter measuring device 42 is performed in a place differing from the first chamber 12 , the second chamber 25 , and the third chamber 33 . Therefore, the structure in each of the chambers 12 , 25 , 33 , and 43 can be restrained or prevented from being complicated.
- the chemical solution supply unit 7 a may include a plurality of chemical solution nozzles 9 although the chemical solution supply unit 7 a includes the single chemical solution nozzle 9 in the first and second embodiments as described above.
- the chemical solution supply unit 7 a is not necessarily required to include the covering member 10 although the chemical solution supply unit 7 a includes the covering member 10 in the first and second embodiments as described above.
- a chemical solution may be supplied to the whole area of the upper surface of the substrate W although a chemical solution is partially supplied to the upper surface of the substrate W in the first and second embodiments as described above. Additionally, a chemical solution may be supplied to the peripheral end surface of the substrate W and/or to the lower surface of the substrate W without being limited to only the upper surface of the substrate W.
- processing of the substrate W may be processing other than the processing for removing foreign matters although foreign matters, such as particles, adhering to the substrate Ware removed from the substrate W by supplying a chemical solution to the substrate W in the first and second embodiments as described above.
- a chemical solution to the substrate W in the first and second embodiments as described above.
- an etching process that is performed to remove a thin film formed on the front surface of the substrate W by use of a chemical solution may be performed for the substrate W.
- the foreign-matter measuring unit 40 may be disposed at a position accessible by the center robot CR although the foreign-matter measuring unit 40 is disposed at a position accessible by the indexer robot IR in the second embodiment as described above.
- at least one processing unit 7 of a plurality of processing units 7 may be the foreign-matter measuring unit 40 .
- the foreign-matter measuring device 42 may be arranged to measure the position of foreign matters in the chemical solution supply unit 7 a (first chamber 12 ) although the foreign-matter measuring device 42 measures the position of foreign matters in the foreign-matter measuring unit 40 (fourth chamber 43 ) in the second embodiment as described above.
- the foreign-matter measuring unit 40 may not be provided, and the chemical solution supply unit 7 a may additionally include the foreign-matter measuring device 42 .
- the substrate W is not necessarily required to be transferred from the carrier C to the foreign-matter measuring unit 40 and be transferred from the foreign-matter measuring unit 40 to the chemical solution supply unit 7 a , and therefore time taken to transfer the substrate W can be shortened. Therefore, throughput can be increased.
- the substrate processing apparatuses 1 and 201 may be apparatuses for processing a polygonal substrate, such as a glass substrate for a liquid crystal display device, although the substrate processing apparatuses 1 and 201 are apparatuses for processing a circular substrate W, such as a semiconductor wafer, in the first and second embodiments as described above.
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Abstract
A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.
Description
- 1. Field of the Invention
- This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.
- 2. Description of Related Art
- A substrate, such as a semiconductor wafer or a glass substrate for a liquid crystal display device, is processed by use of a processing liquid in a production process in which a semiconductor device, a liquid crystal display device, or the like is produced.
- For example, Japanese Published Unexamined Patent Application No. 2007-318016 discloses a substrate processing apparatus of the single-substrate processing type that performs bevel etching. This substrate processing apparatus includes a spin chuck that horizontally holds and rotates a substrate around a vertical axis and a lower-surface nozzle that faces the central portion of a lower surface of the substrate held by the spin chuck. A chemical solution discharged from the lower-surface nozzle is supplied to the central portion of the lower surface of the substrate being rotated. Thereafter, the chemical solution supplied thereto spreads outwardly along the lower surface of the substrate by the rotation of the substrate, and turns to the peripheral portion of an upper surface of the substrate while proceeding along the peripheral end surface of the substrate. As a result, the chemical solution is supplied to the whole area of the peripheral portion of the upper surface of the substrate.
- Likewise, Japanese Published Unexamined Patent Application No. 2007-142077 discloses a substrate processing apparatus of the single-substrate processing type that performs bevel etching. This substrate processing apparatus includes a spin chuck that horizontally holds and rotates a substrate around a vertical axis and a peripheral-portion processing nozzle that faces the peripheral portion of an upper surface of the substrate held by the spin chuck. A chemical solution discharged from the peripheral-portion processing nozzle is supplied to the peripheral portion of the upper surface of the substrate being rotated. As a result, the chemical solution is supplied to the whole area of the peripheral portion of the upper surface of the substrate.
- Additionally, U.S. Patent Application Publication No. 2006/0151008 A1 discloses a cleaning method for cleaning a substrate by use of a highly viscous liquid. In this cleaning method, a highly viscous liquid is supplied to an upper surface of a substrate. Thereafter, the substrate starts being rotated. The liquid supplied thereto moves outwardly on the substrate by the rotation of the substrate. As a result, the highly viscous liquid is discharged from the substrate. Foreign matters adhering to the upper surface of the substrate are discharged from the substrate along with the highly viscous liquid. As a result, the foreign matters are removed from the substrate.
- In the substrate processing apparatuses of Japanese Published Unexamined Patent Application Nos. 2007-318016 and 2007-142077, a chemical solution supplied to the peripheral portion of the upper surface of the substrate is discharged outwardly by the rotation of the substrate. Therefore, the chemical solution is required to be discharged from the nozzle during the processing of the substrate by use of the chemical solution. Therefore, a state in which the peripheral portion of the upper surface of the substrate and the chemical solution are in contact with each other is maintained, and the chemical solution that has a sufficient processing capability continues being supplied to the peripheral portion of the upper surface of the substrate. However, the consumption of the chemical solution will be increased if the chemical solution continues being discharged from the nozzle.
- On the other hand, in the cleaning method of U.S. Patent Application Publication No. 2006/0151008 A1, a highly viscous liquid is supplied to an upper surface of a substrate. The liquid is high in viscosity, and hence can be held on the substrate. Therefore, a state in which the substrate and the liquid are in contact with each other can be maintained even if a highly viscous liquid does not continue being supplied to the substrate. Therefore, the consumption of the liquid can be reduced. However, in this cleaning method, foreign matters cannot be sometimes removed from the substrate if adhesion of the foreign matters to the upper surface of the substrate is extremely firm.
- In order to reduce the consumption of a chemical solution and to reliably remove foreign matters from a substrate, it is possible to, for example, employ a method for supplying the substrate with a highly viscous chemical solution capable of dissolving the substrate. According to this method, the substrate can be allowed to hold the chemical solution because the chemical solution has high viscosity. Therefore, the consumption of the chemical solution can be reduced. Additionally, foreign matters adhering to the substrate can be lifted off from the substrate along with a portion of the substrate by allowing the substrate and the chemical solution to react together and hence dissolving the portion of the substrate. Therefore, the foreign matters can be reliably removed from the substrate.
- However, in this method, the chemical solution contiguous to the substrate is not replaced by a new chemical solution, and therefore there is a case in which much time is consumed to allow the substrate and the chemical solution to sufficiently react together, and hence a satisfactory processing speed cannot be secured. It is conceivable that the substrate is located at that place (i.e., the position to which the chemical solution has been supplied) until the substrate and the chemical solution sufficiently react together, and, if so, a highly viscous chemical solution cannot be supplied to a subsequent substrate until the substrate to which the chemical solution has been supplied is taken out. Therefore, throughput (i.e., the number of substrates processed per unit time) will be decreased.
- It is therefore an object of the present invention to provide a substrate processing apparatus and a substrate processing method that are capable of reducing the consumption of a chemical solution and capable of restraining or preventing a decrease in throughput.
- One embodiment of the present invention provides a substrate processing apparatus including a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.
- According to this structure, a chemical solution containing an etching component and a thickening agent is supplied to a substrate held by the first substrate holding unit in the first processing chamber. Thereafter, the substrate is transferred by the substrate transfer unit from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate. This operation is repeatedly performed, and a plurality of substrates on each of which the chemical solution is held are carried into the second processing chamber. The substrates carried into the second processing chamber are held by the second substrate holding unit in a state of holding the chemical solution. The substrates held by the second substrate holding unit are carried out of the second processing chamber in order of arrival of a stay time in the second processing chamber at a predetermined time. The substrates are processed without hindrance in this way.
- The viscosity of a chemical solution supplied to the substrate is increased by adding a thickening agent. In other words, the flowability of a chemical solution is lowered by adding a thickening agent. Therefore, a state in which the substrate is covered with a chemical solution is maintained even if the chemical solution does not continue being supplied to the substrate. Therefore, the consumption of the chemical solution can be reduced. Additionally, an etching component is contained in the chemical solution, and therefore foreign matters, such as particles, adhering to a substrate can be lifted off from the substrate along with a portion of the substrate, or foreign matters can be removed from the substrate by being dissolved by the etching component. As a result, such foreign matters can be reliably removed from the substrate.
- As mentioned above, the substrate to which the chemical solution has been supplied in the first processing chamber is transferred from the first processing chamber to the second processing chamber in a state of holding the chemical solution, and is held in the second processing chamber during a predetermined time in a state of holding the chemical solution. Therefore, a period of time during which the substrate and the chemical solution react to each other is secured sufficiently. Additionally, the reaction of the substrate and the chemical solution to each other is also performed outside the first processing chamber, and therefore the chemical solution can be supplied to a subsequent substrate in the first processing chamber during the progression of the reaction of the substrate and the chemical solution to each other. Therefore, a decrease in throughput (i.e., the number of substrates to be processed per unit time) can be restrained or prevented.
- The substrate processing apparatus may further include a third processing chamber, a third substrate holding unit that holds a substrate in the third processing chamber, and a rinsing liquid supply unit that supplies a rinsing liquid to a substrate held by the third substrate holding unit. In this case, the substrate transfer unit may be arranged to transfer a substrate from the second processing chamber to the third processing chamber.
- According to this structure, a substrate held in the second processing chamber during a predetermined time is transferred by the substrate transfer unit from the second processing chamber to the third processing chamber. In other words, a substrate that has satisfactorily reacted to a chemical solution in the second processing chamber is carried into the third processing chamber. Thereafter, a rinsing liquid is supplied to the substrate held by the third substrate holding unit in the third processing chamber. As a result, the chemical solution held on the substrate is rinsed away by the rinsing liquid. As mentioned above, the supply of the chemical solution, the reaction of the substrate and the chemical solution to each other, and the removal of the chemical solution are performed in the different processing chambers, respectively, and therefore the structure in each of the processing chambers can be prevented from being complicated.
- The chemical solution supply unit may be arranged to supply the chemical solution to the whole area of the major surface of the substrate held by the first substrate holding unit. The chemical solution supply unit may be arranged to partially supply the chemical solution to the major surface of the substrate held by the first substrate holding unit. If the substrate is a substrate (for example, a bare wafer) that does not have a thin film on its surface layer, the major surface of the substrate is a surface of the substrate itself. If the substrate is a substrate that has a thin film on its surface layer, the major surface of the substrate may be an outer surface of the thin film, or may be an outer surface of the bed of the thin film. When the chemical solution is partially supplied to the major surface of the substrate, the consumption of the chemical solution can be made smaller than when the chemical solution is supplied to the whole area of the major surface of the substrate.
- If the chemical solution is partially supplied to the major surface of the substrate, the region into which the chemical solution is supplied may be a region determined for each substrate. Specifically, the substrate processing apparatus may further include a foreign-matter measuring unit that measures a position of foreign matters adhering to the major surface of the substrate, and the chemical solution supply unit may be arranged to supply the chemical solution into a region in which foreign matters are contained in the major surface. According to this structure, the chemical solution is reliably supplied into the region in which foreign matters are contained, and therefore the foreign matters adhering to the substrate can be reliably removed. Additionally, the chemical solution is supplied only into the region in which foreign matters are contained, and therefore the chemical solution can be restrained or prevented from being supplied into a region that has no need for the supply of the chemical solution. Therefore, the region that has no need for the supply of the chemical solution can be restrained or prevented from being affected by the chemical solution.
- When the position of foreign matters adhering to the major surface of the substrate is measured by the foreign-matter measuring unit, the foreign matters may be measured in any one of the first, second, and third processing chambers, or may be measured in a place differing from these processing chambers. Specifically, the substrate processing apparatus may further include a measuring chamber in which the position of foreign matters adhering to the substrate is measured by the foreign-matter measuring unit, and the substrate transfer unit may be arranged to transfer the substrate from the measuring chamber to the first processing chamber. According to this structure, foreign matters are measured by the foreign-matter measuring unit in a place differing from the first, second, and third processing chambers, and therefore the structure in each of the processing chambers can be restrained or prevented from being complicated.
- When a chemical solution is partially supplied to the major surface of the substrate, the region into which the chemical solution is supplied may be a predetermined region. Specifically, the chemical solution supply unit may be arranged to supply the chemical solution into a predetermined region of the major surface. The predetermined region of the major surface may be a peripheral portion of the major surface. According to this structure, the region into which the chemical solution is supplied is predetermined, and therefore the position to which the chemical solution is supplied is not required to be changed for each substrate.
- Another embodiment of the present invention provides a substrate processing method including a chemical solution supply step of supplying a chemical solution containing an etching component and a thickening agent to a substrate and allowing the substrate to hold the chemical solution, a transfer step of transferring the substrate in a state in which the chemical solution is held on the substrate after the chemical solution supply step is performed, and a reaction processing step of promoting a reaction of the substrate on which the chemical solution is held and the chemical solution to each other after the transfer step is performed. The etching component may be a mixture of hydrofluoric acid and hydrogen peroxide or a mixture of ammonium hydroxide and hydrogen peroxide. The thickening agent may be one or more selected from methylcellulose, carboxymethyl cellulose, polyethylene glycol, sodium polyacrylate, and polyvinyl alcohol. According to this method, the same effect as the above-mentioned effect can be fulfilled.
- The aforementioned or other objects, features, and effects of the present invention will be clarified by the following description of embodiments given below with reference to the accompanying drawings.
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FIG. 1 is a illustrated plan view showing a layout of a substrate processing apparatus according to a first embodiment of the present invention. -
FIG. 2 is a schematic view showing a structure of a chemical solution supply unit according to the first embodiment of the present invention. -
FIG. 3 is a plan view of a chemical solution nozzle and a structure relative to this nozzle according to the first embodiment of the present invention. -
FIG. 4 is a side view of the chemical solution nozzle and the structure relative to this nozzle according to the first embodiment of the present invention. -
FIG. 5 is a schematic view showing a structure of a reaction unit according to the first embodiment of the present invention. -
FIG. 6 is a schematic view showing a structure of a rinse unit according to the first embodiment of the present invention. -
FIG. 7 is a view for describing one example of substrate processing performed by the substrate processing apparatus according to the first embodiment of the present invention. -
FIG. 8 is a illustrated plan view showing a layout of a substrate processing apparatus according to a second embodiment of the present invention. -
FIG. 9 is a schematic side view showing a structure of a foreign-matter measuring unit according to the second embodiment of the present invention. -
FIG. 10 is a view for describing one example of substrate processing performed by the substrate processing apparatus according to the second embodiment of the present invention. -
FIG. 1 is a illustrated plan view showing a layout of asubstrate processing apparatus 1 according to a first embodiment of the present invention. - The
substrate processing apparatus 1 is a substrate processing apparatus of the single-substrate processing type that processes circular substrates W, such as semiconductor wafers, one by one by use of a processing liquid, such as a chemical solution or a rinsing liquid. Thesubstrate processing apparatus 1 includes an indexer block 2, aprocessing block 3 joined to the indexer block 2, and a control device 4 that controls the operation of devices provided in thesubstrate processing apparatus 1 or controls the opening and closing of valves. - The indexer block 2 includes a
carrier holding section 5, an indexer robot IR (substrate transfer unit), and anIR moving mechanism 6. Thecarrier holding section 5 holds carriers C that can contain a plurality of substrates W. The carriers C are held by thecarrier holding section 5 in a state of being arranged in a horizontal carrier array direction U. TheIR moving mechanism 6 moves the indexer robot IR in the carrier array direction U. The indexer robot IR performs a carry-in operation for carrying a substrate W into the carrier C held by thecarrier holding section 5 and a carry-out operation for carrying a substrate W out of the carrier C. The substrate W is transferred by the indexer robot IR in a horizontal posture. - On the other hand, the
processing block 3 includes a plurality of (for example, four or more)processing units 7 that process substrates W and a center robot CR (a substrate transfer unit). Theprocessing units 7 are arranged so as to surround the center robot CR when viewed planarly. Theprocessing units 7 include a chemicalsolution supply unit 7 a that supplies a chemical solution to a substrate W, areaction unit 7 b that promotes a reaction of the substrate W and the chemical solution to each other, and a rinseunit 7 c that rinses away the chemical solution supplied to the substrate W. The center robot CR performs a carry-in operation for carrying substrates W into theprocessing unit 7 and a carry-out operation for carrying substrates W out of theprocessing unit 7. In addition, the center robot CR transfers substrates W between theprocessing units 7. Each substrate W is transferred by the center robot CR in a horizontal posture. The center robot CR receives substrates W from the indexer robot IR, and delivers substrates W to the indexer robot IR. -
FIG. 2 is a schematic view showing a structure of a chemicalsolution supply unit 7 a according to the first embodiment of the present invention.FIG. 3 is a plan view of achemical solution nozzle 9 and a structure relative to this nozzle according to the first embodiment of the present invention.FIG. 4 is a side view of thechemical solution nozzle 9 and the structure relative to this nozzle according to the first embodiment of the present invention. - The chemical
solution supply unit 7 a includes a first spin chuck 8 (first substrate holding unit) that horizontally holds and rotates a substrate W, a chemical solution nozzle 9 (chemical solution supply unit) that supplies a chemical solution to the upper surface of a substrate W held by thefirst spin chuck 8, a coveringmember 10 disposed near the upper surface of a substrate W held by thefirst spin chuck 8, anitrogen gas nozzle 11 that supplies nitrogen gas between a substrate W and the coveringmember 10, and a first chamber 12 (first processing chamber) that contains thefirst spin chuck 8, thechemical solution nozzle 9, the coveringmember 10, and thenitrogen gas nozzle 11. - The
first spin chuck 8 includes a disk-shapedspin base 13 that is rotatable around a vertical axis passing through the center of a substrate W while horizontally holding the substrate W and aspin motor 14 that rotates thespin base 13 around the vertical axis. Thefirst spin chuck 8 may be a gripping-type chuck that grips a substrate W in a horizontal direction and holds the substrate W horizontally, or may be a vacuum-type chuck that horizontally holds a substrate W by sucking a rear surface (lower surface), which is a non-device forming surface, of the substrate W. In the first embodiment, thefirst spin chuck 8 is a gripping-type chuck. - The
chemical solution nozzle 9 is connected to a chemicalsolution supply pipe 16 with achemical solution valve 15 interposed therein. The supply of a chemical solution to thechemical solution nozzle 9 is controlled by opening and closing thechemical solution valve 15. Anozzle moving mechanism 17 moves thechemical solution nozzle 9 between a processing position (shown inFIG. 2 toFIG. 4 ) and a waiting position. The processing position is a position at which a chemical solution discharged from thechemical solution nozzle 9 is supplied to the upper surface of a substrate W held by thefirst spin chuck 8, and the waiting position is a position away from thefirst spin chuck 8. The processing position of thechemical solution nozzle 9 in the first embodiment is a predetermined position at which a chemical solution discharged from thechemical solution nozzle 9 is supplied to the peripheral portion of the upper surface of a substrate W. Without being limited to the predetermined position, the processing position of thechemical solution nozzle 9 may include a plurality of positions at which a chemical solution discharged from thechemical solution nozzle 9 is supplied to the upper surface of a substrate W. In other words, the processing position of thechemical solution nozzle 9 may be a predetermined region in which a chemical solution discharged from thechemical solution nozzle 9 is supplied to any one of a plurality of positions on the upper surface of a substrate W. - The chemical solution supplied to the
chemical solution nozzle 9 is a highly viscous etchant whose viscosity has been adjusted by a thickening agent. The viscosity of the chemical solution is adjusted so that the chemical solution stays at a position on the substrate W, to which the chemical solution has been supplied, almost without moving from this position, for example, when the chemical solution is supplied to the upper surface of the substrate W rotating at a rotational speed of several hundred revolutions per minute (rpm) or less at room temperature (20° C. to 30° C.). A specific viscosity range of the chemical solution is 100 mPa·s to 100 Pa·s, preferably 1 to 70 Pa·s, and more preferably 3 to 50 Pa·s. The chemical solution contains an etching component and a thickening agent. The etching component is a liquid that dissolves a substrate W or foreign matters, such as particles, adhering to the substrate W. The substrate W mentioned here may be a substrate (for example, a bare wafer) that has no thin film on its surface layer, or may be a substrate that has a thin film on its surface layer. The etching component that dissolves a substrate W may be a component that dissolves the substrate itself (for example, bare wafer), or may be a component that dissolves a thin film formed on the surface layer of the substrate W. The thickening agent is mixed with the etching component. One example of the chemical solution is a mixture of a mixture of hydrofluoric acid and hydrogen peroxide or a mixture of ammonium hydroxide and hydrogen peroxide with at least one of methylcellulose, carboxymethyl cellulose, polyethylene glycol, sodium polyacrylate, and polyvinyl alcohol. Both the mixture of hydrofluoric acid and hydrogen peroxide and the mixture of ammonium hydroxide and hydrogen peroxide are one example of the etching component, and at least one of methylcellulose, carboxymethyl cellulose, polyethylene glycol, sodium polyacrylate, and polyvinyl alcohol is one example of the thickening agent. - The covering
member 10 is large enough to cover at least one portion of the peripheral portion of the upper surface of the substrate W. The coveringmember 10 may be larger than the substrate W when viewed planarly, or may be smaller than the substrate W when viewed planarly. In the first embodiment, the coveringmember 10 is a plate-like member smaller than the substrate W when viewed planarly. The coveringmember 10 has a flat lower surface. A moving mechanism (not shown) moves the coveringmember 10 between a processing position (shown inFIG. 2 toFIG. 4 ) and a waiting position. The processing position is a position at which the lower surface of the coveringmember 10 is brought close to the upper surface of the substrate W and at which a portion of the peripheral portion of the upper surface of the substrate W is covered with the coveringmember 10. The waiting position is a position away from thefirst spin chuck 8. The processing position of the coveringmember 10 is disposed inside the processing position of the chemical solution nozzle 9 (in a direction approaching the rotational axis of the substrate W). The processing position of the coveringmember 10 and the processing position of thechemical solution nozzle 9 are near each other. Therefore, the coveringmember 10 is placed inside thechemical solution nozzle 9, and thechemical solution nozzle 9 and the coveringmember 10 are near each other in a state in which thechemical solution nozzle 9 and the coveringmember 10 are in their respective processing positions. Thechemical solution nozzle 9 may be arranged to be held by the coveringmember 10 and be moved together with the coveringmember 10. - The
nitrogen gas nozzle 11 is connected to a nitrogengas supply pipe 19 with anitrogen gas valve 18 interposed therein. The supply of nitrogen gas to thenitrogen gas nozzle 11 is controlled by opening and closing thenitrogen gas valve 18. Thenitrogen gas nozzle 11 is held by the coveringmember 10. Therefore, thenitrogen gas nozzle 11 moves together with the coveringmember 10. Thenitrogen gas nozzle 11 is arranged so that, when nitrogen gas is discharged in a state in which the coveringmember 10 is in the processing position, nitrogen gas discharged therefrom flows outwardly (in a direction receding from the rotational axis of the substrate W) between the lower surface of the coveringmember 10 and the upper surface of the substrate W. Thenitrogen gas nozzle 11 may be held independently of the coveringmember 10 without being held by the coveringmember 10. - The
first chamber 12 includes afirst partition wall 21 having afirst opening 20 and afirst gate shutter 22 with which thefirst opening 20 is covered. Thefirst gate shutter 22 is disposed outside thefirst partition wall 21. A first gate opening-closingmechanism 23 is connected to thefirst gate shutter 22. The first gate opening-closingmechanism 23 moves thefirst gate shutter 22 between a closed position at which thefirst opening 20 is closed by thefirst gate shutter 22 and an open position at which thefirst opening 20 is opened. Thefirst gate shutter 22 is beforehand placed at the open position when the substrate W is carried into thefirst chamber 12 or when the substrate W is carried out of thefirst chamber 12. The substrate W is carried into and out of thefirst chamber 12 in a state in which thefirst opening 20 is opened. Thereafter, thefirst gate shutter 22 is placed at the closed position, and thefirst opening 20 is closed by thefirst gate shutter 22. -
FIG. 5 is a schematic view showing a structure of thereaction unit 7 b according to the first embodiment of the present invention. - The
reaction unit 7 b includes a plurality of substrate holding members 24 (second substrate holding unit) that horizontally hold substrates W, a second chamber 25 (second processing chamber) in which thesubstrate holding members 24 are contained, and aheater 26 that heats the inside of thesecond chamber 25. - The plurality of
substrate holding members 24 are arranged to horizontally hold a plurality of substrates W, respectively. Thesubstrate holding members 24 may hold the substrates W so that the substrates W are arrayed in an up-down direction in a horizontal posture, or may hold the substrates W so that the substrates W are arrayed in a horizontal direction in a horizontal posture. Additionally, thesubstrate holding members 24 may hold the substrates W by supporting the substrates W from below, or may hold the substrates W by horizontally gripping the substrates W. In other words, as long as the substrates W are horizontally held, thesubstrate holding members 24 do not have restrictions on how to hold the substrates W. The heat of theheater 26 is transmitted to the substrates W held by thesubstrate holding members 24. As a result, the substrates W are heated in thesecond chamber 25. - The
second chamber 25 includes asecond partition wall 28 having asecond opening 27 and asecond gate shutter 29 with which thesecond opening 27 is covered. Thesecond gate shutter 29 is disposed outside thesecond partition wall 28. A second gate opening-closingmechanism 30 is connected to thesecond gate shutter 29. The second gate opening-closingmechanism 30 moves thesecond gate shutter 29 between a closed position at which thesecond opening 27 is closed by thesecond gate shutter 29 and an open position at which thesecond opening 27 is opened. Thesecond gate shutter 29 is beforehand placed at the open position when the substrate W is carried into thesecond chamber 25 or when the substrate W is carried out of thesecond chamber 25. The substrate W is carried into and out of thesecond chamber 25 in a state in which thesecond opening 27 is opened. Thereafter, thesecond gate shutter 29 is placed at the closed position, and thesecond opening 27 is closed by thesecond gate shutter 29. -
FIG. 6 is a schematic view showing a structure of the rinseunit 7 c according to the first embodiment of the present invention. - The rinse
unit 7 c includes a third spin chuck 31 (third substrate holding unit) that horizontally holds and rotates a substrate W, a rinsing liquid nozzle 32 (rinsing liquid supply unit) that supplies a rinsing liquid to the upper surface of the substrate W held by thethird spin chuck 31, and a third chamber 33 (third processing chamber) that contains thethird spin chuck 31 and the rinsingliquid nozzle 32. - The
third spin chuck 31 includes a disk-shapedspin base 13 that is rotatable around a vertical axis passing through the center of a substrate W while horizontally holding the substrate W and aspin motor 14 that rotates thespin base 13 around the vertical axis. Thethird spin chuck 31 may be a gripping-type chuck, or may be a vacuum-type chuck. In the first embodiment, thethird spin chuck 31 is a gripping-type chuck. - The rinsing
liquid nozzle 32 is connected to a rinsingliquid supply pipe 35 with a rinsingliquid valve 34 interposed therein. The supply of the rinsing liquid to the rinsingliquid nozzle 32 is controlled by opening and closing the rinsingliquid valve 34. A moving mechanism (not shown) moves the rinsingliquid nozzle 32 between a processing position (shown inFIG. 6 ) and a waiting position. The processing position is a position at which a rinsing liquid discharged from the rinsingliquid nozzle 32 is supplied to the central portion of the upper surface of a substrate W held by thethird spin chuck 31, and the waiting position is a position away from thethird spin chuck 31. Pure water (DIW: Deionized water), carbonated water, electrolyzed ion water, hydrogen water, ozone water, or aqueous hydrochloric acid of dilute concentration (e.g., about 10 to 100 ppm) can be mentioned as the rinsing liquid supplied to the rinsingliquid nozzle 32. - The
third chamber 33 includes athird partition wall 37 having athird opening 36 and athird gate shutter 38 with which thethird opening 36 is covered. Thethird gate shutter 38 is disposed outside thethird partition wall 37. A third gate opening-closingmechanism 39 is connected to thethird gate shutter 38. The third gate opening-closingmechanism 39 moves thethird gate shutter 38 between a closed position at which thethird opening 36 is closed by thethird gate shutter 38 and an open position at which thethird opening 36 is opened. Thethird gate shutter 38 is beforehand placed at the open position when the substrate W is carried into thethird chamber 33 or when the substrate W is carried out of thethird chamber 33. The substrate W is carried into and out of thethird chamber 33 in a state in which thethird opening 36 is opened. Thereafter, thethird gate shutter 38 is placed at the closed position, and thethird opening 36 is closed by thethird gate shutter 38. -
FIG. 7 is a view for describing one example of processing the substrate W performed by thesubstrate processing apparatus 1 according to the first embodiment of the present invention. Hereinafter, reference is made toFIG. 1 andFIG. 7 . - The control device 4 allows the indexer robot IR to carry out unprocessed substrates W contained in the carrier C. Thereafter, the control device 4 moves the substrates W carried out of the carrier C from the indexer robot IR to the center robot CR. Thereafter, the control device 4 allows the center robot CR to carry the substrate W delivered to the center robot CR into the chemical
solution supply unit 7 a. As a result, each substrate W is placed on thefirst spin chuck 8 as shown inFIG. 7 . When the substrate W is placed on thefirst spin chuck 8, the control device 4 locates thechemical solution nozzle 9 and the coveringmember 10 at their respective waiting positions. - Thereafter, a chemical solution supply process in which a chemical solution is supplied to the peripheral portion of the upper surface of the substrate W is performed as shown in
FIG. 7 . Specifically, the control device 4 controls thespin motor 14 and allows thefirst spin chuck 8 to start the rotation of the substrate W. Thereafter, the control device 4 moves thechemical solution nozzle 9 and the coveringmember 10 to their respective processing positions. As a result, thechemical solution nozzle 9, the coveringmember 10, and thenitrogen gas nozzle 11 move above the peripheral portion of the upper surface of the substrate W, and the lower surface of the coveringmember 10 is brought close to the peripheral portion of the upper surface of the substrate W. Thereafter, the control device 4 successively opens thenitrogen gas valve 18 and thechemical solution valve 15, and allows thenitrogen gas nozzle 11 and thechemical solution nozzle 9 to discharge nitrogen gas and a chemical solution, respectively, while the substrate W is being rotated by thefirst spin chuck 8. - Nitrogen gas discharged from the
nitrogen gas nozzle 11 flows outwardly between the lower surface of the coveringmember 10 and the upper surface of the substrate W. Thechemical solution nozzle 9 located at the processing position discharges a chemical solution toward a portion of the peripheral portion of the upper surface of the substrate W. The control device 4 rotates the substrate W while discharging the chemical solution from thechemical solution nozzle 9. Therefore, the chemical solution discharged from thechemical solution nozzle 9 is supplied to the peripheral portion of the upper surface of the substrate W over the whole circumference. As a result, the chemical solution is supplied to the whole area of the peripheral portion of the upper surface of the substrate W. The chemical solution has high viscosity, and therefore the chemical solution supplied from thechemical solution nozzle 9 to the substrate W hardly moves from the solution-supplied position and stays at this position. Therefore, a state in which the chemical solution is held in the whole area of the peripheral portion of the upper surface of the substrate W is maintained. The peripheral portion of the upper surface of the substrate W is etched by contact with the chemical solution. - The control device 4 allows the
nitrogen gas nozzle 11 to discharge nitrogen gas while a chemical solution is being discharged from thechemical solution nozzle 9. Therefore, the chemical solution has high volatility, and, even if gas of the chemical solution is generated between thechemical solution nozzle 9 and the substrate W, this gas is restrained or prevented from moving inwardly by nitrogen gas flowing outwardly. Especially near thechemical solution nozzle 9, the chemical solution and air are in contact with each other between thechemical solution nozzle 9 and the chemical solution held on the substrate W, in addition to the chemical solution held on the substrate W. Therefore, the area in which the chemical solution and air are in contact with each other near thechemical solution nozzle 9 is greater than in other regions, and chemical solution gas is generated more easily than in other regions. Therefore, the coveringmember 10 is disposed near thechemical solution nozzle 9, and nitrogen gas is supplied between the coveringmember 10 and the substrate W, and, as a result, a region inside the peripheral portion of the upper surface of the substrate W can be efficiently restrained or prevented from being exposed to the chemical solution gas. - When a predetermined period of time elapses after the
nitrogen gas valve 18 and thechemical solution valve 15 have been opened, the control device 4 allows thenitrogen gas valve 18 and thechemical solution valve 15 to be closed, so that the chemical solution and the nitrogen gas stop being discharged. Furthermore, the control device 4 controls thespin motor 14, and allows thefirst spin chuck 8 to stop the rotation of the substrate W. Thereafter, the control device 4 allows the center robot CR to carry the substrate W held by thefirst spin chuck 8 out of the chemicalsolution supply unit 7 a. Thereafter, the control device 4 allows the center robot CR to carry the substrate W carried out of the chemicalsolution supply unit 7 a into thereaction unit 7 b. The substrate W to which the chemical solution has been supplied is transferred from the chemicalsolution supply unit 7 a to thereaction unit 7 b in a horizontal posture. Accordingly, the substrate W is transferred from the chemicalsolution supply unit 7 a to thereaction unit 7 b in a state in which the chemical solution is held on the substrate W. - Thereafter, as shown in
FIG. 7 , a reaction process in which the reaction of the substrate W and the chemical solution to each other is promoted is performed in a state in which the chemical solution is held on the substrate W. Specifically, the control device 4 allows the center robot CR and any one of thesubstrate holding members 24 to horizontally hold the substrate W carried out of the chemicalsolution supply unit 7 a. As a result, as shown inFIG. 7 , the substrate W is horizontally held by thesubstrate holding member 24 in a state in which the chemical solution is held on the peripheral portion of the upper surface of the substrate W. The substrate W held on thesubstrate holding member 24 is held in thereaction unit 7 b during a predetermined time. The reaction of the substrate W and the chemical solution to each other progresses during this predetermined time, and the peripheral portion of the upper surface of the substrate W is etched. Therefore, if foreign matters adhere to the peripheral portion of the upper surface of the substrate W, the foreign matters are lifted off from the substrate W along with a portion of the substrate W, or the chemical solution dissolves the foreign matters, so that the foreign matters are removed from the substrate W. The control device 4 may allow theheater 26 to heat the substrate W and the chemical solution held on the substrate W while the substrate W is being held in thereaction unit 7 b. If the activity of the chemical solution becomes higher correspondingly to an increase in temperature, the processing time of the substrate W by use of the chemical solution can be shortened by heating the chemical solution and the substrate W. The ordinary processing time is 3 minutes to 12 hours, preferably 10 minutes to 2 hours, and the processing temperature is 15 to 100° C., preferably 20 to 60° C., depending on the kind of foreign matters and the degree of adhesion. - Only the carry-in operation of substrates W into the
reaction unit 7 b is performed at an initial step at which substrates W start being processed by thesubstrate processing apparatus 1. When the number of substrates W carried into thereaction unit 7 b reaches a predetermined number of substrates W, i.e., reaches two or more, the control device 4 allows a plurality of substrates W to be carried out in order of arrival from a substrate W whose stay time in thereaction unit 7 b has first arrived at a predetermined time. In other words, when the number of substrates W carried into thereaction unit 7 b reaches a predetermined number, the control device 4 gives instructions to alternately and repeatedly perform a carry-in operation in which a single substrate W is carried into thereaction unit 7 b by the center robot CR and a carry-out operation in which a single substrate W held in thereaction unit 7 b during a predetermined time is carried out of thereaction unit 7 b by the center robot CR. Thereafter, according to instructions given by the control device 4, the substrate W carried out of thereaction unit 7 b is carried into the rinseunit 7 c by the center robot CR. As a result, as shown inFIG. 7 , the substrate W is placed on thethird spin chuck 31. When the substrate W is placed on thethird spin chuck 31, the control device 4 allows the rinsingliquid nozzle 32 to be located at the waiting position. - Thereafter, as shown in
FIG. 7 , a rinsing liquid (for example, deionized water) is supplied to the substrate W, and a rinsing process for rinsing away the chemical solution held on the peripheral portion of the upper surface of the substrate W is performed. Specifically, the control device 4 controls thespin motor 14, and allows thethird spin chuck 31 to start rotating the substrate W. Thereafter, the control device 4 gives instructions to open the rinsingliquid valve 34 and to discharge a rinsing liquid from the rinsingliquid nozzle 32 toward a central portion of the upper surface of the substrate W while rotating the substrate W by thethird spin chuck 31. The rinsing liquid discharged from the rinsingliquid nozzle 32 is supplied to the central portion of the upper surface of the substrate W, and spreads outwardly along the upper surface of the substrate W while receiving a centrifugal force produced by the rotation of the substrate W. As a result, the rinsing liquid is supplied to the whole area of the upper surface of the substrate W, and the chemical solution held on the peripheral portion of the upper surface of the substrate W is rinsed away. Furthermore, foreign matters that have lifted off from the peripheral portion of the upper surface of the substrate W along with a portion of the substrate W by the reaction of the substrate W and the chemical solution to each other or foreign matters dissolved by the chemical solution are rinsed away by the rinsing liquid. As a result, the foreign matters are removed from the substrate W, and the substrate W is cleaned. When a predetermined time elapses after the rinsingliquid valve 34 is opened, the control device 4 closes the rinsingliquid valve 34, and stops discharging the rinsing liquid from the rinsingliquid nozzle 32. - Thereafter, as shown in
FIG. 7 , spin drying for drying the substrate W is performed. Specifically, the control device 4 controls thespin motor 14, and rotates the substrate W at a high rotational speed (for example, several thousand revolutions per minute (rpm)). As a result, a great centrifugal force acts on the rinsing liquid adhering to the substrate W, and this rinsing liquid is shaken off outwardly from the substrate W. Therefore, the rinsing liquid is removed from the substrate W, and the substrate W is dried. After the spin drying is performed during a predetermined time, the control device 4 controls thespin motor 14, and stops the rotation of the substrate W by thethird spin chuck 31. Thereafter, the control device 4 allows the center robot CR to carry the substrate W held by thethird spin chuck 31 out of the rinseunit 7 c. - After the substrate W is carried out of the rinse
unit 7 c, the control device 4 gives instructions to move the substrate W carried out of the rinseunit 7 c from the center robot CR to the indexer robot IR. Thereafter, the control device 4 allows the indexer robot IR to carry the substrate W delivered to the indexer robot IR into the carrier C. A series of process steps performed by thesubstrate processing apparatus 1 are ended in this way. The control device 4 gives instructions to repeatedly perform the above-mentioned operations and to process a plurality of substrates W one by one. - As described above, in the first embodiment, a chemical solution containing an etching component and a thickening agent is supplied to a substrate W held by the
first spin chuck 8 in the chemicalsolution supply unit 7 a (first chamber 12). Thereafter, the substrate W is transferred by the center robot CR from the chemicalsolution supply unit 7 a to thereaction unit 7 b (second chamber 25) in a state in which the chemical solution is held on the substrate W. This operation is repeatedly performed, and a plurality of substrates W on each of which the chemical solution is held are carried into thereaction unit 7 b. The substrates W carried into thereaction unit 7 b are held on a plurality ofsubstrate holding members 24, respectively, in a state of holding the chemical solution. The substrates W held on thesubstrate holding members 24, respectively, are carried out of thereaction unit 7 b in order of arrival of a stay time in thereaction unit 7 b at a predetermined time. The substrates W are processed without hindrance in this way. - The viscosity of a chemical solution supplied to the substrate W is increased by adding a thickening agent. In other words, the flowability of a chemical solution is lowered by adding a thickening agent. Therefore, a state in which the substrate W is covered with a chemical solution is maintained even if the chemical solution does not continue being supplied to the substrate W. Therefore, the consumption of the chemical solution can be reduced. Additionally, the amount of the chemical solution to be wasted can be reduced by reducing the consumption of the chemical solution. Additionally, an etching component is contained in the chemical solution, and therefore foreign matters, such as particles, adhering to a substrate W can be lifted off from the substrate W along with a portion of the substrate W, or foreign matters can be dissolved by the chemical solution. As a result, such foreign matters can be reliably removed from the substrate W. Additionally, the viscosity of the chemical solution is increased, and therefore the substrate W can be transferred in a state in which the chemical solution is held on the substrate W.
- As mentioned above, the substrate W to which the chemical solution has been supplied by the chemical
solution supply unit 7 a is transferred from the chemicalsolution supply unit 7 a to thereaction unit 7 b in a state of holding the chemical solution, and is held in thereaction unit 7 b during a predetermined time in a state of holding the chemical solution. Therefore, a period of time during which the substrate W and the chemical solution react to each other is secured sufficiently. Additionally, the reaction of the substrate W and the chemical solution to each other is also performed outside the chemicalsolution supply unit 7 a, and therefore the chemical solution can be supplied to a subsequent substrate W by the chemicalsolution supply unit 7 a during the progression of the reaction of the substrate W and the chemical solution to each other. Therefore, a decrease in throughput (i.e., the number of substrates W to be processed per unit time) can be restrained or prevented. - In the first embodiment, a substrate W held in the
reaction unit 7 b during a predetermined time is transferred from thereaction unit 7 b to the rinseunit 7 c by the center robot CR. In other words, a substrate W that has satisfactorily reacted to a chemical solution in thereaction unit 7 b is carried into the rinseunit 7 c. Thereafter, a rinsing liquid is supplied to the substrate W held by thethird spin chuck 31 in the rinseunit 7 c. As a result, the chemical solution held on the substrate W is rinsed away by the rinsing liquid. As mentioned above, the supply of the chemical solution, the reaction of the substrate W and the chemical solution to each other, and the removal of the chemical solution are performed in the different chambers, and therefore the structure in each of thechambers - Additionally, in the first embodiment, the chemical solution is partially supplied to the upper surface of the substrate W. In more detail, the chemical solution is supplied to the peripheral portion of the upper surface of the substrate W. Therefore, in this case, the consumption of the chemical solution can be made smaller than in a case in which the chemical solution is supplied to the whole area of the upper surface of the substrate W. Additionally, the region into which the chemical solution is supplied is predetermined, and therefore the position to which the chemical solution is supplied is not required to be changed for each substrate W. Additionally, the chemical solution is not supplied to a place beyond the predetermined region, and therefore a region that has no need for the supply of the chemical solution can be restrained or prevented from being damaged by the chemical solution. Additionally, the chemical solution has high viscosity, and therefore splashes of the chemical solution caused when the chemical solution is supplied to the substrate W are restrained. As a result, the chemical solution can be reliably restrained or prevented from being supplied to a region other than a desired region.
- Next, a second embodiment of the present invention will be described.
- A main difference between this second embodiment and the first embodiment mentioned above is that a foreign-
matter measuring unit 40 that measures the position of foreign matters adhering to a substrate W is provided in asubstrate processing apparatus 201. Additionally, a chemical solution is supplied into a region determined for each substrate W (i.e., a region in which foreign matters are contained) in the second embodiment, whereas a chemical solution is supplied into a predetermined region (i.e., the peripheral portion of the upper surface of a substrate W) in the first embodiment. InFIG. 8 toFIG. 10 , the same reference character as inFIG. 1 and in the other figures is given to a component equivalent to that ofFIG. 1 toFIG. 7 , and a description of the component equivalent thereto is omitted. -
FIG. 8 is a illustrated plan view showing a layout of thesubstrate processing apparatus 201 according to the second embodiment of the present invention.FIG. 9 is a schematic side view showing a structure of the foreign-matter measuring unit 40 according to the second embodiment of the present invention. - The
substrate processing apparatus 201 according to the second embodiment includes the foreign-matter measuring unit 40 that measures the position of foreign matters adhering to a substrate W in addition to the structure of thesubstrate processing apparatus 1 according to the first embodiment. As shown inFIG. 8 , in the second embodiment, the foreign-matter measuring unit 40 is disposed at a position that is accessible by the indexer robot IR. The indexer robot IR performs a carry-in operation for carrying substrates W into the foreign-matter measuring unit 40 and a carry-out operation for carrying substrates W out of the foreign-matter measuring unit 40. Additionally, the indexer robot IR transfers substrates W between the carrier C held by thecarrier holding section 5 and the foreign-matter measuring unit 40, and transfers substrates W between the foreign-matter measuring unit 40 and the center robot CR. - As shown in
FIG. 9 , the foreign-matter measuring unit 40 includes afourth spin chuck 41 that horizontally holds and rotates a substrate W, a foreign-matter measuring device 42 (foreign-matter measuring unit) that measures the presence or absence of foreign matters and measures the position of foreign matters, and a fourth chamber 43 (measuring chamber) that contains thefourth spin chuck 41. - The
fourth spin chuck 41 includes a disk-shapedspin base 13 that is rotatable around a vertical axis passing through the center of a substrate W while horizontally holding the substrate W and aspin motor 14 that rotates thespin base 13 around the vertical axis. Thefourth spin chuck 41 may be a gripping-type chuck, or may be a vacuum-type chuck. In the second embodiment, thefourth spin chuck 41 is a gripping-type chuck. - The foreign-
matter measuring device 42 measures whether there are foreign matters on the upper surface of the substrate W, and measures the position of foreign matters with respect to the substrate W. A device including at least one of, for example, a particle counter, a total reflection X-ray fluorescence analyzer (TRXRF), an energy dispersive X-ray spectrometer (EDX), a scanning electron microscope (SEM), and an image recognition foreign-matter inspection device can be mentioned as the foreign-matter measuring device 42. In the second embodiment, the foreign-matter measuring device 42 is a device that detects the presence or absence of foreign matters and detects the position of foreign matters by use of a laser beam. - The foreign-
matter measuring device 42 includes anirradiation head 44 that emits a laser beam and ahead moving mechanism 45 that moves theirradiation head 44. Theirradiation head 44 is disposed in thefourth chamber 43. Thehead moving mechanism 45 moves theirradiation head 44 so that a laser beam emitted from theirradiation head 44 moves between the center of the upper surface of the substrate W and the outer peripheral portion of the upper surface of the substrate W. The control device 4 controls thespin motor 14 and the foreign-matter measuring device 42, and moves theirradiation head 44 so that a laser beam emitted from theirradiation head 44 moves between the center of the upper surface of the substrate W and the outer peripheral portion of the upper surface of the substrate W while causing thefourth spin chuck 41 rotate the substrate W. As a result, the whole area of the upper surface of the substrate W is scanned with a laser beam, and is irradiated with the laser beam emitted from theirradiation head 44. - The foreign-
matter measuring device 42 detects the presence or absence of foreign matters on the substrate W by radiating a laser beam to the upper surface of the substrate W. Additionally, the foreign-matter measuring device 42 measures the position of foreign matters detected from the movement amount of theirradiation head 44 moved by thehead moving mechanism 45 and from the rotational angle of the substrate W. In more detail, based on the movement amount of theirradiation head 44 moved by thehead moving mechanism 45, the foreign-matter measuring device 42 measures the distance from the center of the upper surface of the substrate W to foreign matters. Additionally, the foreign-matter measuring device 42 obtains the rotational angle of the substrate W (angle information) that is based on a notch or an orientation flat provided at the peripheral portion of the substrate W from the control device 4. The foreign-matter measuring device 42 measures the position of foreign matters from the distance from the center of the upper surface of the substrate W to the foreign matters and from the rotational angle of the substrate W. Thereafter, the foreign-matter measuring device 42 outputs the position of the foreign matters to the control device 4 as positional information. - When a chemical solution is supplied to the substrate W in the chemical
solution supply unit 7 a, the control device 4 controls the nozzle moving mechanism 17 (seeFIG. 2 ), and gives instructions to supply a chemical solution into a region that contains foreign matters based on the positional information obtained from the foreign-matter measuring device 42. In other words, the control device 4 gives instructions to supply a chemical solution into a region determined for each substrate W (range in which foreign matters are contained), not to supply a chemical solution into a predetermined region (i.e., to the peripheral portion of the upper surface of the substrate W) as in the first embodiment. Therefore, the processing position of the chemical solution nozzle 9 (seeFIG. 2 ) in the second embodiment is not a fixed position but a fixed region in which a chemical solution discharged from thechemical solution nozzle 9 is supplied to any position on the upper surface of the substrate W. - The
fourth chamber 43 includes afourth partition wall 47 having afourth opening 46 and afourth gate shutter 48 with which thefourth opening 46 is covered. Thefourth gate shutter 48 is disposed outside thefourth partition wall 47. The fourth gate opening-closingmechanism 49 is connected to thefourth gate shutter 48. The fourth gate opening-closingmechanism 49 moves thefourth gate shutter 48 between a closed position at which thefourth opening 46 is closed by thefourth gate shutter 48 and an open position at which thefourth opening 46 is opened. Thefourth gate shutter 48 is beforehand placed at the open position when the substrate W is carried into thefourth chamber 43 or when the substrate W is carried out of thefourth chamber 43. The substrate W is carried into and out of thefourth chamber 43 in a state in which thefourth opening 46 is opened. Thereafter, thefourth gate shutter 48 is placed at the closed position, and thefourth opening 46 is closed by thefourth gate shutter 48. -
FIG. 10 is a view for describing one example of processing the substrate W performed by thesubstrate processing apparatus 201 according to the second embodiment of the present invention. Hereinafter, reference is made toFIG. 8 andFIG. 10 . - The control device 4 allows the indexer robot IR to carry out unprocessed substrates W contained in the carrier C. Thereafter, the control device 4 allows the indexer robot IR to carry the substrates W carried out of the carrier C into the foreign-
matter measuring unit 40. As a result, the substrate W is placed on thefourth spin chuck 41. When the substrate W is placed on thefourth spin chuck 41, the control device 4 allows theirradiation head 44 to recede from above thefourth spin chuck 41. - As shown in
FIG. 10 , in the foreign-matter measuring unit 40, the control device 4 allows the foreign-matter measuring device 42 to irradiate the substrate W with a laser beam while causing thefourth spin chuck 41 rotate the substrate W as described above (foreign-matter measuring process). As a result, the position of foreign matters on the substrate W is measured, and positional information about the foreign matters is output from the foreign-matter measuring device 42 to the control device 4. After the position of the foreign matters is measured, the control device 4 allows the indexer robot IR to carry the substrate W out of the foreign-matter measuring unit 40. The substrate W carried out of the foreign-matter measuring unit 40 is delivered from the indexer robot IR to the center robot CR. The center robot CR carries the substrate W received from the indexer robot IR into the chemicalsolution supply unit 7 a. - As shown in
FIG. 10 , in the chemicalsolution supply unit 7 a, a chemical solution discharged from thechemical solution nozzle 9 is supplied to a portion (i.e., a region in which foreign matters are contained) of the upper surface of the substrate W (chemical solution supply process). The chemical solution has high viscosity, and therefore the chemical solution supplied from thechemical solution nozzle 9 to the substrate W hardly moves from the solution-supplied position and stays at this position. Therefore, a state in which the chemical solution is held at the portion of the upper surface of the substrate W is maintained. The portion (region in which foreign matters are contained) of the upper surface of the substrate W is etched by contact with the chemical solution. After the chemical solution is supplied to the substrate W, the substrate W placed in the chemicalsolution supply unit 7 a is carried out of the chemicalsolution supply unit 7 a by the center robot CR. Furthermore, the substrate W carried out of the chemicalsolution supply unit 7 a is carried into thereaction unit 7 b by the center robot CR. - As shown in
FIG. 10 , in thereaction unit 7 b, after a plurality of substrates W are carried in, a carry-in operation in which a single substrate W is carried into thereaction unit 7 b and a carry-out operation in which a single substrate W is carried out of thereaction unit 7 b are alternately and repeatedly performed in the same manner as in the first embodiment. The substrate W held by thesubstrate holding member 24 is held in thereaction unit 7 b during a predetermined time, and, as a result, the reaction of the substrate W and the chemical solution to each other progresses, and the portion (region in which foreign matters are contained) of the upper surface of the substrate W is etched (reaction process). Accordingly, the foreign matters are lifted off from the substrate W along with the portion of the upper surface of the substrate W, or are dissolved by the chemical solution. The substrate W held in thereaction unit 7 b during the predetermined time is carried out of thereaction unit 7 b by the center robot CR. Thereafter, the substrate W carried out of thereaction unit 7 b is carried into the rinseunit 7 c by the center robot CR. - As shown in
FIG. 10 , in the rinseunit 7 c, a rinsing liquid is discharged from the rinsingliquid nozzle 32 toward the central portion of the upper surface of the substrate W held by thethird spin chuck 31 in the same manner as in the first embodiment. As a result, the rinsing liquid is supplied to the whole area of the upper surface of the substrate W, and the chemical solution held on the upper surface of the substrate W is rinsed away (rinsing process). Furthermore, foreign matters lifted off from the upper surface of the substrate W along with a portion of the substrate W by the reaction of the substrate W and the chemical solution to each other or foreign matters dissolved by the chemical solution are rinsed away by the rinsing liquid. As a result, the foreign matters are removed from the substrate W, and the substrate W is cleaned. Thereafter, as shown inFIG. 10 , the rinsing liquid adhering to the substrate W is removed from the substrate W by the high-speed rotation of the substrate W, and the substrate W is dried (spin drying process). - After the spin drying process is performed in the rinse
unit 7 c, the substrate W is carried out of the rinseunit 7 c by the center robot CR. Thereafter, the substrate W carried out of the rinseunit 7 c is delivered from the center robot CR to the indexer robot IR. The indexer robot IR carries the already-processed substrate W received from the center robot CR into the carrier C held by thecarrier holding section 5. Thereby, the series of process steps performed by thesubstrate processing apparatus 201 are ended. The control device 4 gives instructions to repeatedly perform these operations and to process the plurality of substrates W one by one. - As described above, in the second embodiment, the position of foreign matters adhering to the substrate W is measured by the foreign-
matter measuring device 42, and a chemical solution is supplied into a region in which foreign matters are contained. Therefore, a chemical solution is reliably supplied into a region in which foreign matters are contained, and foreign matters adhering to the substrate W are reliably removed. Additionally, a chemical solution is supplied only into a region in which foreign matters are contained, and therefore a region that has no need for the supply of a chemical solution can be restrained or prevented from being damaged by the chemical solution. - Additionally, in the second embodiment, foreign matters are measured by the foreign-
matter measuring device 42 in thefourth chamber 43. In other words, the measurement of foreign matters by the foreign-matter measuring device 42 is performed in a place differing from thefirst chamber 12, thesecond chamber 25, and thethird chamber 33. Therefore, the structure in each of thechambers - Although the first and second embodiments of the present invention have been described as above, the present invention is not limited to the contents of the first and second embodiments, and can be variously modified within the scope of the appended claims.
- For example, the chemical
solution supply unit 7 a may include a plurality ofchemical solution nozzles 9 although the chemicalsolution supply unit 7 a includes the singlechemical solution nozzle 9 in the first and second embodiments as described above. - Additionally, the chemical
solution supply unit 7 a is not necessarily required to include the coveringmember 10 although the chemicalsolution supply unit 7 a includes the coveringmember 10 in the first and second embodiments as described above. - Additionally, a chemical solution may be supplied to the whole area of the upper surface of the substrate W although a chemical solution is partially supplied to the upper surface of the substrate W in the first and second embodiments as described above. Additionally, a chemical solution may be supplied to the peripheral end surface of the substrate W and/or to the lower surface of the substrate W without being limited to only the upper surface of the substrate W.
- Additionally, processing of the substrate W may be processing other than the processing for removing foreign matters although foreign matters, such as particles, adhering to the substrate Ware removed from the substrate W by supplying a chemical solution to the substrate W in the first and second embodiments as described above. For example, an etching process that is performed to remove a thin film formed on the front surface of the substrate W by use of a chemical solution may be performed for the substrate W.
- Additionally, the foreign-
matter measuring unit 40 may be disposed at a position accessible by the center robot CR although the foreign-matter measuring unit 40 is disposed at a position accessible by the indexer robot IR in the second embodiment as described above. Specifically, at least oneprocessing unit 7 of a plurality ofprocessing units 7 may be the foreign-matter measuring unit 40. - Additionally, the foreign-
matter measuring device 42 may be arranged to measure the position of foreign matters in the chemicalsolution supply unit 7 a (first chamber 12) although the foreign-matter measuring device 42 measures the position of foreign matters in the foreign-matter measuring unit 40 (fourth chamber 43) in the second embodiment as described above. In other words, the foreign-matter measuring unit 40 may not be provided, and the chemicalsolution supply unit 7 a may additionally include the foreign-matter measuring device 42. In this case, the substrate W is not necessarily required to be transferred from the carrier C to the foreign-matter measuring unit 40 and be transferred from the foreign-matter measuring unit 40 to the chemicalsolution supply unit 7 a, and therefore time taken to transfer the substrate W can be shortened. Therefore, throughput can be increased. - Additionally, the
substrate processing apparatuses substrate processing apparatuses - Although the embodiments of the present invention have been described in detail, these embodiments are merely concrete examples used to clarify the technical contents of the present invention, and the present invention should not be understood by being limited to these concrete examples, and the spirit and scope of the present invention are limited solely by the appended claims.
- The present application corresponds to Japanese Patent Application No. 2011-048113 filed in the Japan Patent Office on Mar. 4, 2011, and the entire disclosure of the application is incorporated herein by reference.
Claims (6)
1. A substrate processing apparatus comprising:
a first processing chamber and a second processing chamber;
a first substrate holding unit that holds a substrate in the first processing chamber;
a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit;
a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate; and
a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.
2. The substrate processing apparatus according to claim 1 , further comprising:
a third processing chamber;
a third substrate holding unit that holds a substrate in the third processing chamber; and
a rinsing liquid supply unit that supplies a rinsing liquid to the substrate held by the third substrate holding unit,
wherein the substrate transfer unit transfers the substrate from the second processing chamber to the third processing chamber.
3. The substrate processing apparatus according to claim 1 , wherein the chemical solution supply unit partially supplies the chemical solution to a major surface of the substrate held by the first substrate holding unit.
4. The substrate processing apparatus according to claim 3 , further comprising a foreign-matter measuring unit that measures a position of foreign matters adhering to the major surface of the substrate,
wherein the chemical solution supply unit supplies the chemical solution into a region in which the foreign matters are contained in the major surface.
5. The substrate processing apparatus according to claim 4 , further comprising a measuring chamber in which the position of the foreign matters adhering to the substrate is measured by the foreign-matter measuring unit,
wherein the substrate transfer unit transfers the substrate from the measuring chamber to the first processing chamber.
6. The substrate processing apparatus according to claim 3 , wherein the chemical solution supply unit supplies the chemical solution into a predetermined region of the major surface.
Priority Applications (1)
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US14/299,038 US20140283992A1 (en) | 2011-03-04 | 2014-06-09 | Substrate processing apparatus |
Applications Claiming Priority (4)
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JP2011-048113 | 2011-03-04 | ||
JP2011048113A JP5802407B2 (en) | 2011-03-04 | 2011-03-04 | Substrate processing apparatus and substrate processing method |
US13/409,879 US8765002B2 (en) | 2011-03-04 | 2012-03-01 | Substrate processing apparatus and substrate processing method |
US14/299,038 US20140283992A1 (en) | 2011-03-04 | 2014-06-09 | Substrate processing apparatus |
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US13/409,879 Division US8765002B2 (en) | 2011-03-04 | 2012-03-01 | Substrate processing apparatus and substrate processing method |
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US20140283992A1 true US20140283992A1 (en) | 2014-09-25 |
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US14/299,038 Abandoned US20140283992A1 (en) | 2011-03-04 | 2014-06-09 | Substrate processing apparatus |
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JP (1) | JP5802407B2 (en) |
KR (1) | KR101440185B1 (en) |
CN (1) | CN102683243B (en) |
TW (1) | TWI452623B (en) |
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TWI576938B (en) | 2012-08-17 | 2017-04-01 | 斯克林集團公司 | Substrate processing apparatus and substrate processing method |
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WO2018062053A1 (en) * | 2016-09-30 | 2018-04-05 | 東京応化工業株式会社 | Cleaning composition, cleaning method, and method for manufacturing semiconductor |
CN106746701B (en) * | 2016-12-31 | 2018-09-28 | 江苏建达恩电子科技有限公司 | TFT glass thin chemical industry skill pretreatment fluids |
CN106587647B (en) * | 2016-12-31 | 2018-08-31 | 新沂市棋盘工业集中区建设发展有限公司 | TFT glass surface pretreatment fluids |
KR102245342B1 (en) * | 2017-02-28 | 2021-04-27 | 가부시키가이샤 스크린 홀딩스 | Substrate processing apparatus and substrate processing method |
TWI797121B (en) | 2017-04-25 | 2023-04-01 | 美商維克儀器公司 | Semiconductor wafer processing chamber |
CN108033686A (en) * | 2017-12-14 | 2018-05-15 | 天津美泰真空技术有限公司 | A kind of etching liquid for thinning glass substrate |
JP7045196B2 (en) * | 2018-01-15 | 2022-03-31 | 東京応化工業株式会社 | Board processing equipment and board processing method |
CN108470693B (en) * | 2018-03-15 | 2019-03-01 | 福建省福联集成电路有限公司 | A kind of Etaching device control method and system |
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US20120223054A1 (en) | 2012-09-06 |
KR20120100769A (en) | 2012-09-12 |
US8765002B2 (en) | 2014-07-01 |
JP5802407B2 (en) | 2015-10-28 |
JP2012186304A (en) | 2012-09-27 |
CN102683243B (en) | 2016-01-06 |
TW201243936A (en) | 2012-11-01 |
TWI452623B (en) | 2014-09-11 |
CN102683243A (en) | 2012-09-19 |
KR101440185B1 (en) | 2014-09-12 |
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