JP2005044866A - System and process for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a system and a process for processing a substrate in which processing efficiency is enhanced while reducing unnecessary damage on the substrate by performing a required processing selectively at a required part on the surface of the substrate. <P>SOLUTION: The system for processing a substrate comprises a foreign matter measuring section 1 for detecting the position and type of a foreign matter on the surface of the substrate, a section 5 for storing the measurements, a section 2 for filling the existing part of foreign matter partially with processing liquid based on the information of the position and type of a foreign matter stored in the storage section 5, and a section 3 for cleaning the substrate by supplying cleaning liquid over the entire surface thereof. The partial liquid filling section 2 may be provided with a processing liquid head of the same structure as that of an ink jet head. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
【Technical field】
This invention cleans various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma display panels, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, etc. The present invention relates to a substrate processing apparatus and a substrate processing method.
[0002]
[Background]
In the manufacturing process of the semiconductor device, a cleaning process for removing foreign substances from the surface of the semiconductor wafer is performed as necessary. A substrate processing apparatus for such a cleaning process processes a batch type apparatus in which a plurality of (for example, 50) semiconductor wafers are collectively immersed in a cleaning processing tank and a semiconductor wafer one by one. Broadly divided into single-wafer type.
[0003]
In any type of apparatus, uniform processing is performed on the entire surface of the substrate, and the following measures are taken to enhance the particle removal effect.
A. Increase the concentration of cleaning chemicals.
I. Increase the temperature of the cleaning chemical.
C. Increase processing time.
D. Add physical cleaning methods (brush cleaning, ultrasonic cleaning, etc.).
[0004]
E. Change the operating speed (rotational speed, etc.) of the board.
F. Change the operating speed (oscillation speed, etc.) of the cleaning liquid nozzle.
G. Combine two or more of the above.
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 10-41268
[0006]
[Problems to be solved by the invention]
However, the substrate cleaning conditions and processes are determined so that the most highly contaminated portion on the substrate is used as a reference, so that the cleaning processing efficiency is not so good. Not only that, but in terms of low contamination areas, excessive cleaning may cause unnecessary damage to the substrate.
Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of improving substrate processing efficiency by selectively performing necessary processing on a necessary portion of the substrate surface and reducing unnecessary damage to the substrate. It is to provide a substrate processing method.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the invention according to claim 1 includes a partial liquid depositing means (2) for selectively depositing the first processing liquid at a specific location on the surface of the substrate (W), and the entire surface of the substrate surface. And a whole surface processing liquid supply means (2) for supplying a second processing liquid. The alphanumeric characters in parentheses indicate corresponding components in the embodiments described later. The same applies hereinafter.
[0008]
According to this structure, the process by this 1st process liquid is performed only about the specific location where the 1st process liquid is accumulated. Therefore, in the portion where the first processing liquid is not accumulated, unnecessary processing with the first processing liquid is not performed, efficient processing is possible, and unnecessary damage is caused by the first processing liquid. I will not receive it.
Then, by performing the processing on the entire surface of the substrate with the second processing liquid, it is possible to perform a common processing on the entire substrate. If the partial liquid deposition process using the first processing liquid is performed first and the state of the substrate surface is made uniform to some extent, the processing of the entire surface of the substrate using the second processing liquid can be performed efficiently.
[0009]
The substrate processing apparatus controls the partial liquid deposition means based on the storage means (5) storing the specific location where the first processing liquid should be deposited and the information on the specific location stored in the storage means. The control part (4) which pours a 1st process liquid in the said specific location may be further provided.
According to a second aspect of the present invention, there is provided a substrate state measuring means (1) for detecting a region in a predetermined state on the substrate surface and generating position information thereof, and a memory for storing the position information generated by the substrate state measuring means. Based on the means (5) and the position information stored in the storage means, the partial liquid depositing means is controlled so that the first processing liquid is deposited at a position corresponding to the position information on the substrate surface. The substrate processing apparatus according to claim 1, further comprising control means (4).
[0010]
According to this configuration, an area in a predetermined state on the substrate surface is detected, and based on the position information, the partial liquid depositing unit is controlled so that the partial liquid deposition of the first processing liquid is performed at the detection location. . Accordingly, since the first processing liquid can be surely partially accumulated at a predetermined position on the surface of the substrate, the processing efficiency of the substrate can be further improved.
According to a third aspect of the present invention, the substrate state measuring means distinguishes and detects a plurality of types of states on the substrate surface, and generates each state and position information of a position where the state is detected. The storage means stores the states generated by the substrate state measuring means in association with the position information of the position where the state is detected, and the partial liquid filling means includes the plurality of types. Any one of a plurality of types of treatment liquids (different treatment liquids or the same kind of treatment liquids having different concentrations) (one kind or two kinds or more) corresponding to each of the above states may be used. The liquid can be selectively supplied to the substrate as a processing liquid and partially accumulated on the surface of the substrate, and the control means can control each of the above on the substrate based on the information stored in the storage means. To the position of the state, The processing solution is a substrate processing apparatus according to claim 2, characterized in that for controlling the partial fluid prime means as puddle as the first treatment liquid.
[0011]
According to this configuration, the state of the substrate surface is detected by being distinguished into a plurality of types, and the position information where each state is detected is also measured. On the other hand, the partial liquid filling means can select one of a plurality of types of processing liquids respectively corresponding to the plurality of types of states and supply it to the substrate. It is controlled according to the position state. As a result, an appropriate type of processing liquid corresponding to the state of each position on the substrate is partially deposited at that position, so that the processing efficiency of the substrate can be further improved.
[0012]
According to a fourth aspect of the present invention, a partial liquid deposition step of selectively depositing the first processing liquid on a specific location on the substrate surface, and after the liquid deposition step, the second processing liquid is supplied to the entire area of the substrate surface. A substrate processing method comprising a whole surface processing step.
By this method, an effect similar to the effect described regarding the invention of claim 1 can be achieved.
The invention according to claim 5 further includes a partial liquid accumulation location specifying step of specifying an area in a predetermined state on the substrate surface as a specific location where the first processing liquid is to be accumulated, 5. The substrate processing method according to claim 4, wherein the partial liquid accumulation step is performed later.
[0013]
By this method, an effect similar to the effect described regarding the invention of claim 2 can be achieved.
The invention according to claim 6 includes a step of distinguishing and detecting a plurality of types of states on the substrate surface and detecting a position where each state is detected, wherein the partial liquid buildup step specifying step includes the steps of: Then, at a position where any of the plurality of states on the substrate surface is detected, a processing liquid corresponding to the state of the substrate at the position is supplied to the substrate as the first processing liquid, and the liquid is partially applied to the substrate surface. The substrate processing method according to claim 5, further comprising a step of adding.
[0014]
By this method, an effect similar to the effect described regarding the invention of claim 3 can be achieved.
The partial liquid accumulation means may have a partial liquid accumulation nozzle that discharges the first processing liquid onto the surface of the substrate. This partial liquid build-up nozzle may have a form of a processing liquid head (25) that discharges a small amount of processing droplets from a close distance close to the substrate surface and adheres to the substrate surface. Specifically, the treatment liquid head may have a structure substantially similar to that of the ink jet head.
[0015]
It is preferable that the partial liquid build-up means further includes a relative movement mechanism that relatively moves the partial liquid build-up nozzle and the substrate. The relative movement mechanism may include a nozzle movement mechanism that moves the partial liquid accumulation nozzle in a direction parallel to the substrate surface. Further, a substrate moving mechanism (22) for moving the substrate in a direction along the surface (linear movement or swinging to draw an arc) or rotating the substrate around an axis perpendicular to the surface is provided. Good.
[0016]
More specifically, as the nozzle moving mechanism, a processing liquid head moving mechanism (26) for reciprocally moving the processing liquid head as a partial liquid accumulation nozzle in the X direction parallel to the surface of the substrate is provided. A substrate feeding mechanism that moves the substrate in a direction parallel to the surface thereof and in a Y direction orthogonal to the X direction may be provided. In the case of this configuration, the substrate is transported in the Y direction by the substrate feeding mechanism, and the processing liquid head is reciprocated along the X direction by the processing liquid head moving mechanism so as to synchronize with the transport of the substrate. The liquid head can scan the entire surface of the substrate. In the course of this scanning, the first processing liquid is selectively ejected from the specific position on the substrate surface by discharging the first processing liquid from the processing liquid head at a timing when the processing liquid head faces the specific position on the substrate surface. Can be poured.
[0017]
In addition, a substrate rotating mechanism that rotates the substrate around an axis perpendicular to the surface thereof is provided as the substrate moving mechanism, and a partial liquid accumulation nozzle (which may be a processing liquid head) is rotated as the nozzle moving mechanism. A device that reciprocates from the center along the rotation radius to the maximum rotation radius position of the substrate may be provided. In this case, the entire surface of the substrate can be scanned by the partial liquid accumulation nozzle by moving the partial liquid accumulation nozzle in one direction along the rotation radius by the nozzle movement mechanism in synchronization with the rotation of the substrate by the substrate rotation mechanism. . Therefore, by controlling the discharge of the first processing liquid from the partial liquid accumulation nozzle according to the rotational position of the substrate and the rotational radial direction position of the partial liquid accumulation nozzle, the first process is selectively performed at a specific location on the substrate surface. The liquid can be accumulated. As the nozzle moving mechanism as described above, the partial liquid accumulation nozzle is moved along the surface of the substrate to the rotation center position of the substrate and the maximum rotation radius position of the substrate by swinging around the swing center outside the substrate. A nozzle swing mechanism that can be used may be applied.
[0018]
The treatment liquid head may include a plurality of discharge ports (51A to 54A) that can selectively discharge a plurality of types of treatment liquids. According to this configuration, one or two types of processing liquids selected from a plurality of types of processing liquids can be supplied to individual locations on the substrate surface. Thus, for example, by measuring in advance the type (an example of the surface state of the substrate) and the position of the foreign matter present on the surface of the substrate, the foreign matter present at that location for each location on the substrate surface An appropriate treatment liquid (single treatment liquid or a mixture of two or more treatment liquids) according to the kind of the liquid can be supplied. For example, if a particle is present at a certain location, a processing liquid (generally an alkaline processing liquid) that promotes detachment from the substrate is supplied to that location, and foreign substances made of organic matter are present at another location. If a foreign substance made of metal exists in another part, supply a treatment liquid (generally an acid-based treatment liquid or ozone water) to decompose and remove it. A processing solution for dissolving (generally an acid-based processing solution) is supplied to the location, and if a foreign substance made of a polymer (resist residue) is present in another location, the processing solution for swelling it ( Polymer removal liquid) can be supplied to the said location.
[0019]
By supplying two or more kinds of treatment liquids to the same place or close places, the treatment liquids can be mixed on the substrate, and treatment using these chemical reactions is also possible. Further, a mixing unit of two or more kinds of processing liquids may be provided in the processing liquid head, and a plurality of types of processing liquids may be mixed immediately before discharging the processing liquid (see FIG. 8).
In addition, it is preferable that a filter (56 to 59, 91) for removing foreign substances in the processing liquid is provided in the processing liquid head, and the processing liquid is filtered immediately before discharge.
[0020]
The treatment liquid head having the form of an inkjet head is preferably such that the treatment liquid cartridge (25) is detachable. For example, a treatment liquid cartridge is made of a chemical-resistant resin material (for example, PFA (tetrafluoroethylene / perfluoropropyl vinyl ether: fluororesin)). It becomes reusable by refilling.
The treatment liquid head having the form of an ink jet head may be of a piezo type in which the treatment liquid storage space in the head is reduced by a piezo element, and the treatment liquid is discharged by the pressure generated at that time, or by heating the heater. A thermal ink jet type in which bubbles are generated and the treatment liquid is pushed out by the bubbles may be used.
[0021]
Inkjet heads applied to printers have been put into practical use that can accurately eject 2 picoliters of tiny ink droplets. In addition, for thermal inkjet systems, the ejection direction is controlled by using multiple heaters. An improved type has also been put into practical use.
By using the processing liquid head to which these techniques are applied, the first processing liquid can be accurately deposited in a minute region on the substrate surface. Therefore, for example, the position of a foreign substance (particle or the like) on the substrate surface is accurately measured, and the first processing liquid (one or two of a plurality of types of processing liquids that can be discharged from the processing liquid head) is measured at the measured position. It may be more than that).
[0022]
More specifically, for example, a process of removing the antireflection film on the alignment mark on the substrate using a laser ablation phenomenon is performed, and the distribution of particles scattered on the substrate by this process is measured. Based on the above, it is possible to perform processing such that the first processing liquid is accumulated only in the vicinity of the alignment mark.
Further, based on the data of the pattern formed on the substrate, for example, it is possible to perform a process of supplying the surfactant as the first processing liquid only to the convex portion on the surface of the substrate. As a result, when the substrate surface is treated with a subsequent second treatment liquid (for example, buffered hydrofluoric acid), the surface tension at the portion to which the surfactant is supplied is lowered, so that the second treatment liquid has a fine pattern. It can penetrate into the inside. As the pattern data on the substrate, pattern design data on the substrate may be used, or data obtained by measuring the pattern on the substrate with an imaging device may be used.
[0023]
When the distribution of particles or the like on the substrate is known, the measurement of the partial liquid deposition target region (measurement of the surface state of the substrate) is not necessarily required. For example, chuck marks when holding a substrate with a vacuum chuck, laser mark (substrate serial number) formation part on the substrate, alignment mark part on the substrate, notch part on the substrate periphery (especially in the case of a circular substrate such as a semiconductor wafer) When it is desired to perform partial liquid deposition on a location such as the above, since those locations are known in advance, partial liquid deposition of the first processing liquid can be performed without measuring the partial liquid deposition target region. . The same applies to the case where the surfactant is supplied to the convex portions of the pattern on the substrate based on the pattern design data on the substrate. In addition, partial liquid deposition of the first processing liquid may be performed only in the device formation region on the substrate, and in this case also, measurement of the partial liquid deposition target region is not necessarily required.
[0024]
The partial liquid accumulation by the partial liquid accumulation means may be performed in units of individual divided areas divided into a predetermined pattern on the substrate. Specifically, the region on the substrate surface may be divided into concentric, radial, grid-like patterns, and whether or not partial liquid deposition is performed for each divided region may be selected (FIG. 9). reference).
As the partial liquid accumulation target region information generating means, a particle counter, a total reflection X-ray fluorescence analyzer (TRXRF), a scanning electron microscope (SEM), an image recognition foreign substance inspection device, or the like can be applied.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a block diagram for explaining the configuration of a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus is a device that performs a cleaning process for removing foreign substances from the substrate surface. The foreign substance measuring unit 1 that measures foreign substance information for each substrate to be processed, and the foreign substance measuring unit 1 Based on the measurement result of the foreign matter information obtained by the above, a partial liquid buildup processing unit 2 for depositing a processing liquid on a specific portion of the substrate surface, and a cleaning processing unit 3 for performing a whole surface cleaning process on the substrate after the partial liquid deposition processing, It has. Further, the substrate processing apparatus includes a foreign matter measuring unit 1, a partial liquid buildup processing unit 2, a cleaning processing unit 3, and a control device 4 that controls each operation of the substrate transfer mechanism 6 that transfers the substrate between them. And a storage device 5 connected to the control device 4.
[0026]
Substrates to be processed are carried into the foreign matter measuring unit 1 by the substrate transport mechanism 6 and the foreign matter information (especially the position and type of foreign matter) on the surface thereof is measured one by one. That is, so-called exhaustive inspection is performed.
The measurement result of the foreign matter information is stored for each substrate in the storage device 5 in a state in which the position and type of the foreign matter are associated with each other by the operation of the control device 4. Based on the measurement result given from the foreign matter measuring unit 1, the control device 4 determines whether or not the substrate needs to be cleaned (whether or not a predetermined acceptance criterion is satisfied). Then, the substrate transport mechanism 6 is controlled so as to pay out the substrate.
[0027]
Further, the control device 4 reads the position of the foreign matter such as particles and the type of the foreign matter from the storage device 5 for the substrate that needs to be cleaned. Based on the result, the partial liquid build-up processing unit 2 is controlled, so that the treatment liquid corresponding to the type of the foreign matter is selectively accumulated at the place where the foreign matter is present on the substrate. The processing liquid to be accumulated is a processing liquid for facilitating the removal of the foreign matters by the cleaning process by the cleaning processing unit 3. For example, if the type of foreign matter is a particle (if silicon particles, nitride, etc., it is a processing liquid (for example, a mixed solution of ammonia and hydrogen peroxide solution) for promoting removal from the substrate, and the type of foreign matter is If it is an organic substance, it is a treatment liquid for decomposing the organic substance (for example, a sulfuric acid-type chemical liquid). If the foreign substance is a metal, a treatment liquid for dissolving the metal (for example, a hydrochloric acid-type chemical liquid). If the type of foreign matter is a polymer (resist residue), it is a treatment liquid (polymer removal liquid) for swelling the polymer.
[0028]
The substrate after the partial liquid deposition process is carried into the cleaning processing unit 3 and subjected to the entire surface cleaning process. The substrate after being processed by the cleaning processing unit 3 may be discharged by the substrate transport mechanism 6, or it is carried into the foreign material measuring unit 1 again and the processing from the foreign material measurement is repeated, and the substrate surface is in a clean state. You may pay out after confirming this.
FIG. 2 is a conceptual diagram for explaining a configuration example of the partial liquid build-up processing unit 2. The partial liquid buildup processing unit 2 is held by the substrate holding member 21 that holds the substrate W horizontally, the substrate moving mechanism 22 that moves the substrate W by driving the substrate holding member 21, and the substrate holding member 21. A processing liquid head 25 capable of facing the substrate W and a head moving mechanism 26 for moving the processing liquid head 25 parallel to the surface of the substrate W are provided.
[0029]
The treatment liquid head 25 has a structure and form similar to an ink jet head used in a printer. As shown in FIG. 3, a head body 251 and a treatment liquid cartridge 252 that can be attached to and detached from the head body 251 are provided. It has. The treatment liquid cartridge 252 includes four treatment liquid tanks 31, 32, 33, and 34 that can respectively store predetermined amounts of four kinds of treatment liquids. The minute droplets of the processing liquid stored in 34 are discharged toward the lower side of the processing liquid head 25 (the direction facing the substrate W). The cartridge 252 is made of a chemical-resistant fluorine resin (for example, PFAPFA: tetrafluoroethylene / perfluoropropyl vinyl ether). After the processing liquid is used up, it is recovered and refilled with the processing liquid. By doing so, it can be reused.
[0030]
The four treatment liquid tanks 31, 32, 33, and 34 contain, for example, a mixed liquid of ammonia and hydrogen peroxide, a sulfuric acid chemical liquid, a hydrochloric acid chemical liquid, and a polymer removal liquid, respectively.
FIG. 4 is a conceptual diagram showing the configuration of the treatment liquid head 25. Nitrogen gas from a nitrogen gas supply source is supplied to the treatment liquid tanks 31, 32, 33, and 34 through a foreign matter removing filter 35 and a regulator 36 to pressurize the inside. . The processing liquid tanks 31, 32, 33, and 34 are supplied to the processing liquid reservoirs 51, 52, 53, and 54 through the processing liquid supply paths 41, 42, 43, and 44, respectively. Valves 46, 47, 48, and 49 and foreign matter removing filters 56, 57, 58, and 59 are interposed in the paths 41 to 44, respectively. The filters 56, 57, 58 and 59 remove foreign substances from the processing liquid immediately before being discharged toward the substrate W.
[0031]
Micro discharge ports 51A, 52A, 53A, 54A are formed on the lower surfaces of the treatment liquid reservoirs 51, 52, 53, 54. The processing liquid reservoirs 51, 52, 53, 54 are provided with processing liquid discharge driving units 71, 72, 73, 74, respectively. The processing liquid discharge driving units 71 to 74 may be piezo elements (piezoelectric elements) that push the processing liquid stored in the processing liquid reservoirs 51 to 54 from the discharge ports 51A to 54A, or in the processing liquid reservoirs 51 to 54. A heater that generates bubbles by bumping and pushes the processing liquid from the discharge ports 51A to 54A by the bubbles may be used.
[0032]
FIG. 5 is a diagram for explaining a mode of relative movement between the substrate W and the processing liquid head 25 by the action of the substrate moving mechanism 22 and the head moving mechanism 26.
5A, the head moving mechanism 26 moves the processing liquid head 25 over at least the diameter range of the substrate W along the X direction (horizontal direction) along the surface of the substrate W held by the substrate holding member 21. FIG. And a substrate feed mechanism that transports the substrate W over at least the diameter range of the substrate W in the Y direction (horizontal direction) perpendicular to the X direction as well as along the surface of the substrate W. The example in the case of being constituted by is shown. In this case, the processing liquid head 25 is reciprocated by the reciprocating mechanism in synchronism with the substrate feeding operation in the Y direction by the substrate feeding mechanism, so that the processing liquid head 25 can move the entire surface of the substrate W. The surface can be scanned without hesitation.
[0033]
FIG. 5B shows a substrate rotating mechanism in which the substrate moving mechanism 22 rotates and drives the substrate W around an axis perpendicular to the surface thereof, and the head moving mechanism 26 has the substrate holding member 21 holding the substrate W. An example is shown in which a reciprocating mechanism that linearly reciprocates the processing liquid head 25 along the surface over at least the rotation radius range of the substrate W is shown. In this case, the processing liquid head 25 is moved by the control device 4 in a range from the rotation center of the substrate W to the position of the maximum rotation radius of the substrate W so as to synchronize with the rotation of the substrate W. The entire surface of the substrate W can be scanned without any problems.
[0034]
FIG. 5C shows a surface of the substrate W in which the substrate moving mechanism 22 is configured by a substrate rotating mechanism that rotates the substrate W around an axis perpendicular to the surface thereof, and the head moving mechanism 26 is held by the substrate holding member 21. 2 shows an example in which the processing liquid head 25 is reciprocally moved while drawing an arc trajectory over at least the rotation radius range of the substrate W. More specifically, this swing mechanism is configured to attach the treatment liquid head 25 to a swing arm provided with a swing center outside the substrate W, and swing the swing arm around the swing center. Also good. Even in such a configuration, the control device 4 moves the processing liquid head 25 along the circular arc trajectory in a range from the rotation center to the position of the maximum rotation radius of the substrate W so as to be synchronized with the rotation of the substrate W. The processing liquid head 25 scans the entire surface of the substrate W without any problem.
[0035]
In the process in which the processing liquid head 25 scans the surface of the substrate W, the control device 4 controls the valves 46, 47, 48, and 49 to be in an open state, and then information on foreign matters (foreign matter information) stored in the storage device 5. The processing liquid discharge driving units 71, 72, 73, 74 are controlled based on the position and type). Accordingly, one or more of the processing liquid discharge driving units 71 to 74 corresponding to the type of the foreign matter are driven at the timing when the treatment liquid head is located at the location where the foreign matter exists, The processing liquid for assisting the removal of the liquid is accumulated.
[0036]
FIG. 6 is a conceptual diagram illustrating a configuration example of the cleaning processing unit 3. In this example, the cleaning processing unit 3 is directed to a spin chuck 81 that rotates while holding the substrate W, a rotation drive mechanism 82 that rotates the spin chuck 81, and a surface of the substrate W held by the spin chuck 81. A two-fluid spray nozzle 83 that discharges a jet of treatment liquid droplets, a swing arm 84 that swings the two-fluid spray nozzle 83 along the surface of the substrate W at least within the range of its rotation radius, and the swing And a swing drive mechanism 85 for driving the arm 84.
[0037]
With this configuration, the substrate W is rotated together with the spin chuck 81 by the rotation drive mechanism 82 while oscillating the oscillating arm 84 at least in the range from the center of rotation of the substrate W to the maximum rotational radius position, so that the entire substrate W is rotated. A droplet jet discharged from the two-fluid spray nozzle 83 can be supplied to the surface. After the entire surface of the substrate W has been processed, the spin chuck 81 is rotated at a high speed, thereby executing a drying process for removing moisture from the surface of the substrate W by centrifugal force. The substrate W after the drying process is unloaded by the substrate transport mechanism 6.
[0038]
The two-fluid spray nozzle 83 is supplied with pure water (deionized pure water) as a treatment liquid and nitrogen gas as an inert gas, and the two-fluid spray nozzle 83 includes pure water and nitrogen gas. Are mixed in the nozzle housing or in the vicinity of the discharge opening of the nozzle housing, thereby generating droplets of the processing liquid and discharging a jet of the droplets toward the substrate. Foreign substances on the surface of the substrate W are eliminated by the action of the jet of droplets. In this case, since the foreign matter is easily detached from the surface of the substrate W by the partial liquid deposition process, the surface of the substrate W can be cleaned in a short time.
[0039]
Instead of the cleaning process using the two-fluid spray nozzle 83, a cleaning process using an ultrasonic nozzle that applies ultrasonic waves to the processing liquid and discharges it to the substrate may be applied, or the surface of the substrate may be scrubbed. A scrub cleaning to clean may be applied. Moreover, the structure which cleans the whole surface of a board | substrate by supplying the process liquid with a washing | cleaning action from the normal nozzle to the surface of a board | substrate may be sufficient.
Further, the cleaning processing unit 3 does not have to be a single-wafer type apparatus as shown in FIG. 6, and may have a batch type configuration in which a plurality of substrates are collectively immersed in a processing liquid tank.
[0040]
The following can be used as a measuring apparatus constituting the foreign matter measuring unit 1.
1. Particle counter
The particle counter detects the position and size of particles, which are particulate foreign matter present on the substrate surface, and the position and size of a defect (COP: Crystal Originated Particle) on the substrate surface. In this case, the position information of the measured particles on the substrate (and further size information as necessary) is stored in the storage device 5.
2. Total reflection X-ray fluorescence spectrometer (TRXRF)
A total reflection X-ray fluorescence analyzer irradiates X-rays at a minute angle (for example, 0.1 degree) with respect to the substrate surface, and damages the substrate by utilizing total reflection of X-rays on the substrate surface. The position and concentration (number of atoms per unit area) of the elements present on the substrate surface can be detected. Metal elements can be mainly detected, and each metal element having an element number between potassium and zinc can be detected. Among metal elements that can exist on a semiconductor wafer or a glass substrate for liquid crystal display, Cu, Fe, Ni, Cr, and Ca can be detected.
[0041]
When this total reflection X-ray fluorescence analyzer is used, the storage device 5 stores the position of the foreign matter on the substrate surface and the data of the type of the foreign matter (metal element) (and the surface concentration data if necessary). Will be stored.
3. Energy dispersive X-ray spectrometer (EDX: Energy Dispersive X-ray spectrometer)
The energy dispersive X-ray analyzer can examine the type and content of constituent elements of foreign substances existing on the substrate surface by irradiating the substrate surface with X-rays and analyzing the energy of the generated X-rays. Device. In this case, the storage device 5 stores the position of the foreign matter on the substrate and the type of the element constituting the foreign matter (and the content thereof as required).
4). Scanning electron microscope (SEM: Scanning Electron Microscope)
By using a scanning electron microscope, the position and shape of the foreign matter on the substrate can be observed. In this case, the storage device 5 stores the position of the foreign object (and the shape as necessary).
[0042]
By using a scanning electron microscope and an energy dispersive X-ray analyzer (EDX) in combination, it is possible to measure the type and content of elements constituting the foreign matter, and the position and shape of the foreign matter.
5. Image recognition foreign matter inspection system
The image recognition foreign matter inspection apparatus detects the position, shape and size of foreign matter on a substrate by comparing two images obtained by imaging the surface of the substrate before processing and the surface of the substrate after processing, respectively. It is a device that can. Such an apparatus is put into practical use by KLA-Tencor and is commercially available.
[0043]
For example, instead of taking an image of the substrate before processing, an image of the substrate in which the same pattern as the substrate to be cleaned is formed on the surface and foreign matters are precisely excluded is taken By capturing an image of the surface of the substrate and comparing the two, it is possible to extract an image of foreign matter existing on the surface of the substrate to be processed.
When this image recognition foreign matter inspection apparatus is used, the storage device 5 stores foreign matter position data (and, if necessary, shape and size data) on the substrate.
[0044]
FIG. 7 is a block diagram for explaining the configuration of a substrate processing apparatus according to another embodiment of the present invention. In FIG. 7, portions corresponding to the respective portions shown in FIG. 1 are denoted by the same reference numerals as in FIG. In this embodiment, the foreign matter measuring unit 1 is not provided, and instead, the storage device 5 stores foreign matter information of the substrate to be processed in advance. For example, chuck traces on the surface of the substrate (the traces held by the vacuum chuck), chuck portions on the peripheral edge of the substrate (portions where the chuck pins of the mechanical chuck abut), substrate notches, wafer mark forming portions, alignment mark portions, etc. As described above, this configuration can be applied when intensively cleaning a known contaminated portion.
[0045]
The control device 4 controls the partial liquid buildup processing unit 2 based on the foreign substance information stored in the storage device 5, so that an appropriate treatment liquid is partially liquidated at a known contaminated portion such as a chuck mark. become.
Although two embodiments of the present invention have been described above, the present invention can be implemented in other forms. For example, in the above embodiment, the processing liquid is discharged from the processing liquid tank provided in the processing liquid head 25. However, as shown in FIG. 8, two or more processing liquid tanks 30A, Different types of processing liquid stored in 30B may be mixed before discharge, and the mixed processing liquid may be discharged toward the substrate W. In FIG. 8, 90A and 90B are valves, 91 is a filter, 92 is a processing liquid reservoir, 92A is a discharge port, and 93 is a processing liquid discharge drive unit.
[0046]
Further, in the above-described embodiment, the configuration in which the processing liquid head 25 can selectively deposit the processing liquid in an arbitrary area has been described. However, as illustrated in FIG. It may be divided into regions, and it may be determined whether or not to fill the processing liquid for each of the divided regions. 9A is an example in which the surface area of the substrate W is divided by concentric circles, FIG. 9B is an example in which the surface area of the substrate W is radially divided, and FIG. This is an example in which the surface area is divided into a grid pattern.
[0047]
Furthermore, in the above-described embodiment, the processing in the case of removing the foreign matter on the substrate has been described as an example. However, for example, after the surfactant is selectively deposited on the convex portion of the pattern on the substrate, the buffered fluoride is added. A process of supplying a treatment liquid such as an acid over the entire surface of the substrate can be similarly performed.
In addition, various design changes can be made within the scope of matters described in the claims.
[Brief description of the drawings]
FIG. 1 is a block diagram for explaining a configuration of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a conceptual diagram for explaining a configuration example of a partial liquid buildup processing unit.
FIG. 3 is a schematic perspective view showing an external configuration of a treatment liquid head.
FIG. 4 is a conceptual diagram showing a configuration of a treatment liquid head.
FIG. 5 is a diagram for explaining a mode of relative movement between a substrate and a processing liquid head.
FIG. 6 is a conceptual diagram illustrating a configuration example of a cleaning processing unit.
FIG. 7 is a block diagram for explaining a configuration of a substrate processing apparatus according to another embodiment of the present invention.
FIG. 8 is a conceptual diagram showing an example of a processing liquid head having a configuration for mixing a processing liquid inside.
FIG. 9 is a diagram for explaining an example in which a region on a substrate surface is divided in advance and whether or not partial liquid deposition is performed for each divided region.
[Explanation of symbols]
1 Foreign matter measurement unit
2 Partial liquid processing section
3 Cleaning section
4 Control device
5 storage devices
6 Board transport mechanism
21 Substrate holding member
22 Substrate moving mechanism
25 Treatment liquid head
251 Head body
252 Treatment liquid cartridge
26 Head moving mechanism
31-34 Treatment liquid tank
35 Filter
36 Regulator
41-44 Treatment liquid supply path
46-49 valve
51-54 Treatment liquid pool
51A-54A Discharge port
56-59 filter
71-74 Treatment liquid discharge drive unit
81 Spin chuck
82 Rotation drive mechanism
83 Two-fluid spray nozzle
84 Swing arm
85 Swing drive mechanism
30A, 30B Treatment liquid tank
90A, 90B valve
91 Filter
92 Treatment liquid pool
92A Discharge port
93 Treatment liquid discharge drive
W substrate

Claims (6)

Partial liquid depositing means for selectively depositing the first processing liquid on a specific location on the substrate surface;
A substrate processing apparatus, comprising: a whole processing liquid supply unit that supplies a second processing liquid to the entire surface of the substrate. A substrate state measuring means for detecting a region of a predetermined state on the substrate surface and generating position information thereof;
Storage means for storing position information generated by the substrate state measuring means;
And a control means for controlling the partial liquid accumulation means so that the first processing liquid is accumulated at a position corresponding to the position information on the substrate surface based on the position information stored in the storage means. The substrate processing apparatus according to claim 1. The substrate state measuring means detects and distinguishes a plurality of types of states on the substrate surface, and generates each state and position information of the position where the state is detected,
The storage means stores the states generated by the substrate state measurement means in association with the position information of the position where the state is detected.
The partial liquid accumulation means selectively supplies one of a plurality of types of processing liquids corresponding to the plurality of types of states as the first processing liquid to the substrate, and partially accumulates on the substrate surface. That can
Based on the information stored in the storage means, the control means is arranged so that the treatment liquid corresponding to the state is deposited as the first treatment liquid at the position of each state on the substrate. The substrate processing apparatus according to claim 2, wherein the substrate processing unit is controlled. A partial liquid deposition step of selectively depositing the first treatment liquid on a specific portion of the substrate surface;
A substrate processing method comprising: an entire surface processing step of supplying a second processing liquid over the entire surface of the substrate after the liquid deposition step. Further including a partial liquid deposition location specifying step of specifying a region in a predetermined state on the substrate surface as a specific location where the first processing liquid is to be deposited,
5. The substrate processing method according to claim 4, wherein the partial liquid accumulation step is executed after the partial liquid accumulation location specifying step. The partial liquid accumulation location specifying step includes a step of distinguishing and detecting a plurality of types of states on the substrate surface and detecting a position where each state is detected,
In the partial liquid deposition step, a processing liquid corresponding to the state of the substrate at the position is supplied to the substrate as the first processing liquid at a position where any of the plurality of states on the substrate surface is detected. 6. The substrate processing method according to claim 5, further comprising a step of partially depositing on the surface.

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