US20130267100A1 - Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system - Google Patents

Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system Download PDF

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Publication number
US20130267100A1
US20130267100A1 US13/850,735 US201313850735A US2013267100A1 US 20130267100 A1 US20130267100 A1 US 20130267100A1 US 201313850735 A US201313850735 A US 201313850735A US 2013267100 A1 US2013267100 A1 US 2013267100A1
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Prior art keywords
plates
holes
gas
disposed
process chamber
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US13/850,735
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English (en)
Inventor
Kosuke Takagi
Yuji Takebayashi
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Kokusai Electric Corp
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Hitachi Kokusai Electric Inc
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Assigned to HITACHI KOKUSAI ELECTRIC INC. reassignment HITACHI KOKUSAI ELECTRIC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TAKAGI, KOSUKE, TAKEBAYASHI, YUJI
Publication of US20130267100A1 publication Critical patent/US20130267100A1/en
Assigned to Kokusai Electric Corporation reassignment Kokusai Electric Corporation ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HITACHI KOKUSAI ELECTRIC INC.
Priority to US17/509,791 priority Critical patent/US20220042170A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers

Definitions

  • the present invention relates to a method of manufacturing a semiconductor device, a substrate processing apparatus and an evaporation system, and more particularly, to a method of manufacturing a semiconductor device including a process of processing a semiconductor wafer using liquid source and a substrate processing apparatus and an evaporation system which are exemplarily used therein.
  • Patent Document 1 A technique of forming a film on a substrate using liquid source is disclosed in Patent Document 1 as one process of processes of manufacturing a semiconductor device.
  • a source gas which is gasified by evaporating the liquid source
  • the evaporated source gas may be reliquefied such that the liquid source cannot be efficiently supplied into a process chamber.
  • a method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) evaporating a source material by sequentially flowing the source material to an evaporator and a mist filter including one or more first plates and one or more second plates; (c) supplying the source material evaporated in the step (b) into the process chamber to process the substrate; and (d) unloading the substrate from the process chamber, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • a substrate processing apparatus including: a process chamber configured to accommodate a substrate; a process gas supply system configured to supply a process gas into the process chamber; and an exhaust system configured to exhaust the process chamber, wherein the process gas supply system includes: an evaporator configured to receive a source material; and a mist filter disposed at a downstream side of the evaporator, and including one or more first plates and one or more second plates, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • an evaporation system including: an evaporator configured to receive a source material; and a mist filter disposed at a downstream side of the evaporator and including one or more first plates and one or more second plates, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • FIG. 1 is a schematic view for describing a conventional source material supply system for the purpose of comparison
  • FIG. 2 is a schematic view for describing a source material supply system of an exemplary embodiment of the present invention
  • FIG. 3 is a schematic perspective view for describing a mist filter exemplarily used in the exemplary embodiment of the present invention
  • FIG. 4 is a schematic exploded perspective view for describing the mist filter exemplarily used in the exemplary embodiment of the present invention
  • FIG. 5 is a schematic exploded perspective view for describing the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIG. 6 is a view for describing a status of particles when the conventional source material supply system is used
  • FIG. 7 is a schematic cross-sectional view for describing a flow velocity distribution in the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional view for describing a pressure distribution in the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view for describing a temperature distribution in the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIGS. 10A , 10 B and 10 C are schematic cross-sectional views for describing a variant of the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIGS. 11A , 11 B and 11 C are schematic cross-sectional views for describing a variant of the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIGS. 12A and 12B are schematic cross-sectional views for describing a variant of the mist filter exemplarily used in the exemplary embodiment of the present invention.
  • FIG. 13 is a schematic longitudinal cross-sectional view for describing a substrate processing apparatus of an exemplary embodiment of the present invention.
  • FIG. 14 is a schematic horizontal cross-sectional view taken along line A-A of FIG. 13 ;
  • FIG. 15 is a block diagram showing a configuration of a controller included in the substrate processing apparatus shown in FIG. 13 ;
  • FIG. 16 is a flowchart for describing a process of manufacturing a zirconium oxide film using the substrate processing apparatus of the exemplary embodiment of the present invention.
  • FIG. 17 is a timing chart for describing a process of manufacturing a zirconium oxide film using the substrate processing apparatus of the exemplary embodiment of the present invention.
  • a source gas which is gasified by evaporating the liquid source
  • (1) raising a temperature, and (2) lowering a pressure are very important.
  • various restrictions due to apparatus configurations or process conditions are provided, for example, when the temperature cannot be excessively increased or the pressure cannot be sufficiently lowered, it is difficult to form an appropriate evaporation line.
  • the gas filter 272 a can collect droplets or particles which are caused to be badly evaporated from the evaporator 271 a or particles from the gas supply pipe 232 a .
  • a heater 150 may be installed at the gas supply pipe 232 a from the evaporator 271 a to the process chamber 201 to heat the source gas passing through the gas supply pipe 232 a.
  • the particles or the droplets due to bad evaporation cannot be completely collected by the gas filter 272 a .
  • the gas filter 272 a may be clogged and become a particle source. Further, when the clogging occurs, the filter of the gas filter 272 a should be replaced with a new one.
  • mist filter 300 mist killer 300
  • the heater 150 is installed at the gas supply pipe 232 a from the evaporator 271 a to the process chamber 201 to heat the source gas passing through the gas supply pipe 232 a.
  • the mist filter 300 includes a mist filter main body 350 , and a heater 360 installed outside the mist filter main body 350 and configured to cover the mist filter main body 350 .
  • the mist filter main body 350 of the mist filter 300 includes end plates 310 and 340 of both ends, and two types of plates 320 and 330 disposed between the end plates 310 and 340 .
  • the two types of plates 320 and 330 include a first plate 320 and a second plate 330 .
  • a joint 312 is installed at the end plate 310 of an upstream side.
  • a joint 342 is installed at the end plate 340 of a downstream side.
  • a gas path 311 is disposed in the end plate 310 and the joint 312 .
  • a gas path 341 is disposed in the end plate 340 and the joint 342 .
  • the joint 312 and the joint 342 (the gas path 311 and the gas path 341 ) are connected to the gas supply pipe 232 a.
  • the plate 320 includes a flat plate section 328 , and an outer circumferential section 329 disposed at an outer circumference of the plate section 328 .
  • a plurality of holes 322 are disposed in the plate section 328 only near the outer circumference thereof.
  • the plate 330 includes a flat plate section 338 , and an outer circumferential section 339 disposed at an outer circumference of the plate section 338 .
  • a plurality of holes 332 are disposed in the plate section 338 only near a center thereof (i.e., at different positions from the positions at which the holes 322 are disposed in the plate section 328 ).
  • the mist filter 300 is constituted by assembling the plates 320 and the plates 330 .
  • the plates 320 and the plates 330 have the same or substantially the same shape except for formation positions of the holes 322 and 332 .
  • the flat plate section 328 and the plate section 338 have circular shapes when seen in a plan view, and have the same or substantially the same shape except for formation positions of the holes 322 and 332 .
  • the holes 322 are disposed on concentric circles around the outer circumference of the plate section 328 .
  • the holes 332 are disposed in concentric circles around a center of the plate section 338 .
  • the circles in which the holes 322 are disposed and the circles in which the holes 332 are disposed have different radii. Specifically, the radii of the circles in which the holes 322 are disposed are larger than those of the circles in which the holes 332 are disposed.
  • a region of the plate section 328 in which the holes 322 are disposed is different from a region of the plate section 338 in which the holes 332 are formed.
  • the regions are disposed not to overlap each other in a stacking direction when the plates 320 and the plates 330 are alternately disposed (stacked or assembled).
  • the holes 322 and the holes 332 are disposed to be deviated from an upstream side toward a downstream side of the mist filter 300 . That is, the holes 322 and the holes 332 are disposed not to overlap each other from the upstream side to the downstream side of the mist filter 300 .
  • the outer circumferential sections 329 and 339 of the plates 320 and 330 are thicker than the plate sections 328 and 338 . As the outer circumferential sections 329 and 339 come in contact with the outer circumferential sections 329 and 339 of the adjacent plates, a space (to be described below) is disposed between the plate sections 328 and 338 . In addition, the outer circumferential sections 329 and 339 are disposed at positions offset with respect to the plate sections 328 and 338 . That is, a stepped portion is disposed between side surfaces of the outer circumferential sections 329 and 339 and side surfaces of the plate sections 328 and 338 .
  • one surface of the outer circumferential sections 329 and 339 protrudes from planes of the plate sections 328 and 338 , and the other surface of the outer circumferential sections 329 and 339 is disposed on edge sections of the plate sections 328 and 338 . Accordingly, when the plates 320 and the plates 330 are stacked, the outer circumferential section 329 of the plate 320 is inserted into the edge section of the plate section 338 of the plate 330 , the outer circumferential section 339 of the plate 330 is inserted into the edge section of the plate section 328 of the plate 320 , and thus the plates 320 and 330 are correspondingly coupled to each other.
  • a gas path 370 may become complicated, and probability of colliding droplets generated due to bad evaporation or reliquefaction with heated wall surfaces (the plate sections 328 and 338 ) may be increased.
  • the size of the holes 322 and 332 is set depending on a pressure in the mist filter main body 350 , which is preferably a diameter of 1 to 3 mm. A basis of the lower limit value is that the holes are clogged when the size of the holes is too small.
  • the size of the holes disposed at the center may be smaller than that of the holes disposed around the center.
  • the source gas gasified by evaporating the liquid source using the evaporator 271 a (see FIG. 2 ) and the droplets generated due to bad evaporation or reliquefaction are introduced into the mist filter main body 350 through the gas path 311 in the end plate 310 and the joint 312 , and collide with a center portion 421 (a portion in which the holes 322 are not formed) of the plate section 328 of the one first plate 320 . Then, they pass through the holes 322 disposed near the outer circumference of the plate section 328 and collide with an outer circumferential section 432 (a portion in which the holes 332 are not formed) of the flat plate section 338 of the second plate 330 .
  • the mist filter main body 350 is heated by the heater 360 (see FIG. 3 ) from the outside.
  • the mist filter main body 350 includes the first plates 320 and the second plates 330 , the first plate 320 includes the flat plate section 328 and the outer circumferential section 329 disposed at the outer circumference of the plate section 328 , and the second plate 330 includes the flat plate section 338 and the outer circumferential section 339 disposed at the outer circumference of the plate section 338 . Since the plate section 328 and the outer circumferential section 329 are integrally formed and the plate section 338 and the outer circumferential section 339 are integrally formed, when the mist filter main body is heated by the heater 360 from the outside, the heat is efficiently transferred to the flat plate sections 328 and 338 .
  • the heat from the heater 360 is also sufficiently transferred to the plate sections 328 and 338 efficiently.
  • the gas path 370 is configured to be complicated by the first plates 320 and the second plates 330 as described above, probability of the evaporated source gas and the droplets generated due to bad evaporation or reliquefaction colliding with the heated plate sections 328 and 338 can be increased without excessively increasing pressure loss in the mist filter main body 350 .
  • the droplets generated due to bad evaporation or reliquefaction collide with the heated plate sections 328 and 338 in the mist filter main body 350 having a sufficient calorie and is reheated and evaporated.
  • a material of the mist filter main body 350 may have heat conductivity equal to or higher than that of the material used in the evaporator 271 a or a pipe 232 a .
  • the material may have corrosion resistance.
  • Stainless use steel (SUS) may be used as a general material.
  • mist filter main body 350 includes at least one plate 320 and at least one plate 330 .
  • the above description has been given as to a case where each of the holes 322 and the holes 332 are provided in plural numbers, there may exist at least one hole 322 and at least one hole 332 .
  • Dimensions of the mist filter main body 350 which is an analysis target, are set such that an outer diameter is 40 mm and an overall length is 127 mm.
  • the analysis was performed under the condition in which nitrogen (N 2 ) gas of 30° C. was supplied into the mist filter main body 350 at 20 slm and a pressure of an outlet side of the mist filter main body 350 was set as 13300 Pa.
  • the pressure loss was 1500 Pa (see FIG. 8 ), and a N 2 gas of 30° C. arrived at 150° C. at a fourth plate among a first plate of the first plates 320 , a first plate of the second plates 330 , a second plate of the first plates 320 , and a second plate of the second plates 330 (i.e., the second plate of the second plates 330 ) (see FIG. 9 ).
  • the analysis was performed to satisfy the condition that, while different from an actual condition, was more unfavorable than the actual condition.
  • the mist filter 300 When the mist filter 300 is installed at the gas supply pipe 232 a between the evaporator 271 a and the gas filter 272 a (see FIG. 2 ), the liquid source that cannot be easily evaporated or the droplets generated due to bad evaporation when the evaporation flow rate is large collide with the wall surface (the plate section 328 ) of the first plate 320 and the wall surface (the plate section 338 ) of the second plate 330 in the mist filter 300 having a sufficient calorie and are reheated and evaporated. Then, the droplets due to bad evaporation or the particles generated in the evaporator 271 a and the mist filter 300 , which minutely remain, are collected by the gas filter 272 a just before the process chamber 201 .
  • the mist filter 300 functions to assist the evaporation, and supply a reaction gas with no droplets or particles generated due to bad evaporation into the process chamber 201 to perform the processing such as good film-forming or the like.
  • the mist filter 300 can function to assist the gas filter 272 a and suppress the clogging of the gas filter 272 a to reduce maintenance of the gas filter 272 a or lengthen a filter exchange period of the gas filter 272 a.
  • the first plate 320 includes the flat plate section 328 and the outer circumferential section 329 disposed at the outer circumference of the plate section 328
  • the second plate 330 includes the flat plate section 338 and the outer circumferential section 339 disposed at the outer circumference of the plate section 338 (see FIGS. 4 and 5 ).
  • the end plate 310 also includes a flat plate 318 and an outer circumferential section 319 disposed at an outer circumference of the plate 318
  • the end plate 340 also includes a flat plate 348 and an outer circumferential section 349 disposed at an outer circumference of the plate 348 (see FIGS. 4 and 5 ).
  • spaces 323 , 333 , 313 and 343 are disposed inside the outer circumferential sections 329 , 339 , 319 and 349 , respectively (see FIGS. 4 , 5 , and 10 A).
  • the end plate 310 , the end plate 340 , the first plate 320 and the second plate 330 are adhered to each other, for example, by welding at the outer circumferential sections 319 , 349 , 329 and 339 thereof to be hermetically connected to each other.
  • the mist filter 300 is configured to include the first plate 320 and the second plate 330
  • the mist filter may include three or more plates having different formation positions of holes.
  • no member is installed in the spaces 313 , 323 , 333 and 343 (see FIG. 10A ).
  • a sinter metal or the like may be filled in the spaces 313 , 323 , 333 and 343 .
  • the filled sintered metal is a material that can efficiently transfer the heat heated from the outside of the mist filter main body 350 , and may have any shape such as a spherical shape, a granular shape, a non-linear shape, or the like, as long as the material can be filled into the spaces 313 , 323 , 333 and 343 .
  • a variant of the above-mentioned embodiment will be described.
  • sintered metals 314 , 324 and 334 having a spherical shape such as a metal bowl, or the like may be filled in the spaces 313 , 323 , and 333 ( 343 ). Since the size of the sphere and the pressure loss have a correlation, the size of the sphere is selected according to its purpose.
  • sintered metals 315 , 325 and 335 having a granular shape may be filled in the spaces 313 , 323 , and 333 ( 343 ).
  • the sintered metal having the granular shape has a size smaller than that of the sintered metal having the spherical shape.
  • sintered metals 316 , 326 and 336 used in the gas filter or the like may be filled in the spaces 313 , 323 , and 333 ( 343 ).
  • the sintered metal 326 used in the gas filter may be filled in the space 323 only, and no metal may be filled in the spaces 313 , 333 and 343 .
  • a metal particle size and a fiber form before sintering of the sintered metal used in the gas filter are determined by the size of the collected particles. Since a shape that can collect more fine particles is densified, the pressure loss is also increased. Accordingly, it may be more effective and preferable for the sintered metal to be selectively filled into some of the spaces 313 , 323 , 333 and 343 , rather than all of the spaces 313 , 323 , 333 and 343 .
  • the gas path 370 may be longer in comparison with the above-mentioned embodiment in which the holes 322 are disposed near the outer circumference of the plate section 328 and the holes 332 are disposed near the center of the plate section 338 .
  • the same plates are used as the first plate 320 and the second plate 330 but may be stacked not to overlap the holes.
  • the mist filter main body 350 includes an outer vessel 380 having a cylindrical shape, an inner member 385 , and a filling member 386 such as a sintered metal or the like filled in a gas path 382 disposed between the outer vessel 380 and the inner member 385 .
  • a gas path 382 disposed between the outer vessel 380 and the inner member 385 is filled with the filling member 386 such as the sintered metal or the like, the entire mist filter main body 350 may be integrated such that the heat can be effectively transferred to the inner member 385 .
  • the outer vessel 380 and the inner member 385 may be made of, preferably, a metal member, and more preferably, stainless used steel (SUS).
  • the mist filter main body 350 includes the outer vessel 380 having a cylindrical shape, the inner member 385 , and the filling member 386 such as the sintered metal or the like filled in the gas path 382 disposed between the outer vessel 380 and the inner member 385 .
  • the filling member 386 such as the sintered metal or the like filled in the gas path 382 disposed between the outer vessel 380 and the inner member 385 .
  • a space between a side surface 389 of the cylindrical outer vessel 380 and the inner member 385 in the gas path 382 disposed between the outer vessel 380 and the inner member 385 is filled with the filling member 386 , and a space between an upper surface and a lower surface of the cylindrical outer vessel 380 and the inner member 385 is not filled with the filling member 386 .
  • the entire mist filter main body 350 may be integrated such that the heat can be effectively transferred to the inner member 385 .
  • the outer vessel 380 and the inner member 385 may be made of, preferably, a metal member, and more preferably, stainless used steel (SUS).
  • stainless used steel may be used as the sintered metal filled in the spaces 313 , 323 , 333 and 343 or the gas path 382 .
  • nickel Ni
  • Teflon a registered trademark
  • the pipe 232 a is installed between the evaporator 271 a and the mist filter 300 , and the evaporator 271 a and the mist filter 300 are separately installed. Since the process chamber 201 is reduced in pressure and the mist filter 300 is installed closer to the process chamber 201 than the evaporator 271 a , the mist filter 300 is installed at a lower pressure side than the evaporator 271 a . Since the gas flows toward the low pressure side, separation of the evaporator 271 a and the mist filter 300 may provide a fore flow period of the gas from the evaporator 271 a toward the mist filter 300 . As a result, the gas can collide with the plate 320 and the plate 330 in the mist filter 300 at a higher flow velocity.
  • the mist filter 300 is installed at a downstream side of the evaporator 271 a
  • the gas filter 272 a is installed at a downstream side thereof
  • the gas filter 272 a is connected to the process chamber 201 via the pipe 232 a .
  • the mist filter 300 and the gas filter 272 a may be installed as close to the process chamber 201 as possible. This is because the pressure in the mist filter 300 can be further reduced due to the pressure loss of the pipe 232 a from the evaporator 271 a to the process chamber 201 as they are installed near the process chamber 201 . As the pressure in the mist filter 300 is further reduced, the evaporation can be easily performed and the bad evaporation can be suppressed.
  • the substrate processing apparatus is exemplarily configured as a semiconductor manufacturing apparatus configured to perform a film-forming process, which is a substrate processing process of a method of manufacturing an integrated circuit (IC) serving as a semiconductor device.
  • a film-forming process which is a substrate processing process of a method of manufacturing an integrated circuit (IC) serving as a semiconductor device.
  • IC integrated circuit
  • a batch type vertical apparatus (which may hereinafter be simply referred to as a processing apparatus) configured to perform oxidation, nitridation, diffusion processing or CVD processing on a substrate is used as the substrate processing apparatus will be described.
  • FIG. 13 is a schematic configuration view of a vertical processing furnace of the substrate processing apparatus of the embodiment, showing a processing furnace 202 in a longitudinal cross-sectional view
  • FIG. 14 is a schematic configuration view of the vertical processing furnace of the substrate processing apparatus of the embodiment, showing the processing furnace 202 in a horizontal cross-sectional view
  • FIG. 15 shows a configuration of a controller included in the substrate processing apparatus shown in FIG. 13 .
  • the processing furnace 202 includes a heater 207 serving as a heating unit (a heating mechanism).
  • the heater 207 has a cylindrical shape, and is supported by a heater base (not shown) serving as a holding plate to be vertically installed.
  • a reaction tube 203 constituting a reaction vessel (a processing vessel) is installed concentrically with the heater 207 inside the heater 207 .
  • a seal cap 219 serving as a furnace port cover configured to hermetically seal the lower end opening of the reaction tube 203 is installed under the reaction tube 203 .
  • the seal cap 219 abuts a lower end of the reaction tube 203 from a lower side in a vertical direction.
  • the seal cap 219 is made of a metal such as stainless steel or the like, and has a disc shape.
  • An O-ring 220 serving as a seal member configured to abut the lower end of the reaction tube 203 is installed at the upper surface of the seal cap 219 .
  • a rotary mechanism 267 configured to rotate the boat is installed at the seal cap 219 opposite to the process chamber 201 .
  • a rotary shaft 255 of the rotary mechanism 267 passes through the seal cap 219 to be connected to a boat 217 (to be described below), and is configured to rotate the boat 217 to rotate the wafer 200 .
  • the seal cap 219 is configured to be raised and lowered in the vertical direction by a boat elevator 115 serving as an elevation mechanism vertically installed at the outside of the reaction tube 203 , and thus the boat 217 can be loaded and unloaded into/from the inside of the process chamber 201 .
  • the boat 217 serving as a substrate holding unit (a holder) is vertically installed at the seal cap 219 via a quartz cap 218 serving as an insulating member.
  • the quartz cap 218 is a holding body made of a heat resistance material such as quartz, silicon carbide, or the like, serving as an insulating section, and configured to hold the boat.
  • the boat 217 is made of a heat resistance material such as quartz, silicon carbide, or the like, and configured to concentrically support the wafers 200 in a horizontal posture and in a tube axis direction in a multi-stage.
  • a nozzle 249 a and a nozzle 249 b are installed in the process chamber 201 and under the reaction tube 203 to pass through the reaction tube 203 .
  • the gas supply pipe 232 a and a gas supply pipe 232 b are connected to the nozzle 249 a and the nozzle 249 b , respectively.
  • the two nozzles 249 a and 249 b and the two gas supply pipes 232 a and 232 b are installed at the reaction tube 203 so that multiple types of gases can be supplied into the process chamber 201 .
  • inert gas supply pipes 232 c and 232 e or the like are connected to the gas supply pipe 232 a and the gas supply pipe 232 b , respectively.
  • the evaporator 271 a serving as an evaporating apparatus (an evaporating unit) and configured to evaporate the liquid source to generate an evaporated gas serving as a source gas
  • the mist filter 300 the gas filter 272 a
  • a mass flow controller (MFC) 241 a serving as a flow rate controller (a flow rate control unit)
  • a valve 243 a serving as an opening/closing valve are installed at the gas supply pipe 232 a in sequence from the upstream direction.
  • MFC mass flow controller
  • a valve 243 a serving as an opening/closing valve
  • a valve 243 d serving as an opening/closing valve is installed at the vent line 232 d to supply the source gas to the vent line 232 d via the valve 243 d when the source gas (to be described below) is not supplied into the process chamber 201 .
  • the valve 243 a is closed and the valve 243 d is opened, the supply of the evaporated gas into the process chamber 201 can be stopped while maintaining generation of the evaporated gas in the evaporator 271 a . While a predetermined time is needed to stably generate the evaporated gas, supply/stoppage of the evaporated gas into the process chamber 201 can be switched for an extremely short time by a switching operation of the valve 243 a and the valve 243 d .
  • an inert gas supply pipe 232 c is connected to the gas supply pipe 232 a at a downstream side of the valve 243 a .
  • a mass flow controller 241 c serving as a flow rate controller (a flow rate control unit) and a valve 243 c serving as an opening/closing valve are installed at the inert gas supply pipe 232 c in sequence from the upstream direction.
  • the heater 150 is installed at the gas supply pipe 232 a , the inert gas supply pipe 232 c , and the vent line 232 d to prevent reliquefaction.
  • the above-mentioned nozzle 249 a is connected to the tip section of the gas supply pipe 232 a .
  • the nozzle 249 a is installed to be raised in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 from a lower portion to an upper portion of the inner wall of the reaction tube 203 upward in the stacking direction of the wafers 200 .
  • the nozzle 249 a is constituted as an L-shaped long nozzle.
  • a gas supply hole 250 a configured to supply a gas is installed at a side surface of the nozzle 249 a .
  • the gas supply hole 250 a is opened toward a center of the reaction tube 203 .
  • the gas supply holes 250 a are installed from the lower portion to the upper portion of the reaction tube 203 , have the same opening area, and are disposed at the same opening pitch.
  • a first gas supply system is mainly constituted by the gas supply pipe 232 a , the vent line 232 d , the valves 243 a and 243 d , the mass flow controller 241 a , the evaporator 271 a , the mist filter 300 , the gas filter 272 a , and the nozzle 249 a .
  • a first inert gas supply system is mainly constituted by the inert gas supply pipe 232 c , the mass flow controller 241 c , and the valve 243 c.
  • An ozonizer 500 serving as an apparatus for generating ozone (O 3 ) gas, a valve 243 f , a mass flow controller (MFC) 241 b serving as a flow rate controller (a flow rate control unit), and a valve 243 b serving as an opening/closing valve are installed at the gas supply pipe 232 b in sequence from the upstream direction.
  • An upstream side of the gas supply pipe 232 b is connected to an oxygen gas supply source (not shown) configured to supply oxygen (O 2 ) gas.
  • the O 2 gas supplied into the ozonizer 500 becomes the O 3 gas in the ozonizer 500 to be supplied into the process chamber 201 .
  • a vent line 232 g connected to the exhaust pipe 231 (to be described below) is connected to the gas supply pipe 232 b between the ozonizer 500 and the valve 243 f .
  • a valve 243 g serving as an opening/closing valve is installed at the vent line 232 g to supply the source gas to the vent line 232 g via the valve 243 g when the O 3 gas is not supplied into the process chamber 201 (to be described later).
  • the valve 243 f is closed and the valve 243 g is opened, the supply of the O 3 gas into the process chamber 201 can be stopped while maintaining generation of the O 3 gas by the ozonizer 500 .
  • an inert gas supply pipe 232 e is connected to the gas supply pipe 232 b at the downstream side of the valve 243 b .
  • a mass flow controller 241 e serving as a flow rate controller (a flow rate control unit) and a valve 243 e serving as an opening/closing valve are installed at the inert gas supply pipe 232 e in sequence from the upstream direction.
  • the above-mentioned nozzle 249 b is connected to the tip section of the gas supply pipe 232 b .
  • the nozzle 249 b is installed to be raised and lowered in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 from the lower portion to the upper portion of the inner wall of the reaction tube 203 upward in the stacking direction of the wafers 200 .
  • the nozzle 249 b is constituted as an L-shaped long nozzle.
  • a gas supply hole 250 b configured to supply a gas is installed at a side surface of the nozzle 249 b .
  • the gas supply hole 250 b is opened toward the center of the reaction tube 203 .
  • the gas supply holes 250 b are installed from the lower portion to the upper portion of the reaction tube 203 , have the same opening area, and are disposed at the same opening pitch.
  • a second gas supply system is mainly constituted by the gas supply pipe 232 b , the vent line 232 g , the ozonizer 500 , the valves 243 f , 243 g and 243 b , the mass flow controller 241 b , and the nozzle 249 b .
  • a second inert gas supply system is mainly constituted by the inert gas supply pipe 232 e , the mass flow controller 241 e , and the valve 243 e.
  • a zirconium source gas i.e., a gas containing zirconium (Zr) (a zirconium-containing gas), which is a first source gas
  • Zr zirconium
  • a zirconium-containing gas which is a first source gas
  • TEMAZ tetrakis(ethylmethylamino)zirconium
  • TEMAZ Tetrakis(ethylmethylamino)zirconium
  • TEMAZ is a liquid at a normal temperature and a normal pressure.
  • a gas containing oxygen (O) (an oxygen-containing gas), for example, O 2 gas
  • O 2 gas is supplied into the gas supply pipe 232 b , becomes O 3 gas in the ozonizer 500 , and is supplied into the process chamber 201 via the valve 243 f , the mass flow controller 241 b , and the valve 243 b as an oxidizing gas (oxidant).
  • the O 2 gas serving as the oxidizing gas may be supplied into the process chamber 201 without generating the O 3 gas in the ozonizer 500 .
  • nitrogen (N 2 ) gas is supplied from the inert gas supply pipes 232 c and 232 e into the process chamber 201 via the mass flow controllers 241 c and 241 e , the valves 243 c and 243 e , the gas supply pipes 232 a and 232 b , the nozzles 249 a and 249 b.
  • the exhaust pipe 231 configured to exhaust an atmosphere in the process chamber 201 is installed in the reaction tube 203 .
  • a vacuum pump 246 serving as a vacuum exhaust apparatus is connected to the exhaust pipe 231 via a pressure sensor 245 serving as a pressure detector (a pressure detection unit) configured to detect the pressure in the process chamber 201 and an auto pressure controller (APC) valve 244 serving as a pressure regulator (a pressure regulation unit) to perform vacuum exhaust so that the pressure in the process chamber 201 arrives at a predetermined pressure (a vacuum level).
  • the APC valve 244 is an opening/closing valve configured to open and close the valve to perform the vacuum exhaust and stop the vacuum exhaust of the inside of the process chamber 201 and adjust the valve opening angle to regulate the pressure.
  • An exhaust system is mainly constituted by the exhaust pipe 231 , the APC valve 244 , the vacuum pump 246 , and the pressure sensor 245 .
  • a temperature sensor 263 serving as a temperature detector is installed in the reaction tube 203 , and an electrical connection state to the heater 207 is controlled based on temperature information detected by the temperature sensor 263 so that the temperature in the process chamber 201 arrives at a desired temperature distribution.
  • the temperature sensor 263 has an L shape similar to the nozzles 249 a and 249 b , and is installed along the inner wall of the reaction tube 203 .
  • a controller 121 serving as a control unit is constituted as a computer including a central processing unit (CPU) 121 a , a random access memory (RAM) 121 b , a memory device 121 c , and an I/O port 121 d .
  • the RAM 121 b , the memory device 121 c and the I/O port 121 d are configured to exchange data with the CPU 121 a via an internal bus.
  • An input/output device 122 constituted as, for example, a touch panel or the like is connected to the controller 121 .
  • an external memory device (a recording medium) 123 on which a program (to be described later) is stored is connectable to the controller 121 .
  • the memory device 121 c is constituted by, for example, a flash memory, a hard disk drive (HDD), or the like.
  • a control program configured to control an operation of the substrate processing apparatus or a process recipe on which a sequence or condition of substrate processing (to be described later) is disclosed is readably stored in the memory device 121 c .
  • the control program or the process recipe can be stored in the memory device 121 c by storing the control program or the process recipe in an external memory device 123 and connecting the external memory device 123 to the controller 121 .
  • the process recipe is assembled to obtain a predetermined result by causing the controller 121 to perform the sequences of the following substrate processing process, and functions as a program.
  • the process recipe or the control program is also generally and simply referred to as a program.
  • the case in which the terms of the program are recited in the description may include the case in which only the process recipe is included, the case in which only the control program is included, and the case in which both are included.
  • the RAM 121 b is constituted as a memory region (a work area) in which a program or data read by the CPU 121 a is temporarily held.
  • the I/O port 121 d is connected to the mass flow controllers 241 a , 241 b , 241 c and 241 e , the valves 243 a , 243 b , 243 c , 243 d , 243 e , 243 f and 243 g , the evaporator 271 a , the mist filter 300 , the ozonizer 500 , the pressure sensor 245 , the APC valve 244 , the vacuum pump 246 , the heaters 150 and 207 , the temperature sensor 263 , the boat rotary mechanism 267 , the boat elevator 115 , and so on.
  • the CPU 121 a is configured to read and perform the control program from the memory device 121 c and read the process recipe from the memory device 121 c according to an input of an operation command from the input/output device 122 . Then, the CPU 121 a performs a flow rate control operation on various gases by the mass flow controllers 241 a , 241 b , 241 c and 241 e , an opening/closing operation on the valves 243 a , 243 b , 243 c , 243 d , 243 e , 243 f and 243 g , a pressure regulation operation based on opening/closing of the APC valve 244 and the pressure sensor 245 , a temperature control operation on the heater 150 , a temperature control operation on the heater 207 based on the temperature sensor 263 , control on the evaporator 271 a , the mist filter 300 (the heater 360 ) and the ozonizer 500 , start/stoppage on the
  • CVD chemical vapor deposition
  • the boat 217 supporting the wafers 200 is raised by the boat elevator 115 to be loaded into the process chamber 201 (boat loading) (see step S 102 in FIG. 16 ).
  • the seal cap 219 hermetically seals the lower end of the reaction tube 203 via the O-ring 220 .
  • the inside of the process chamber 201 is vacuum-exhausted by the vacuum pump 246 to a desired pressure (a vacuum level).
  • the pressure in the process chamber 201 is measured by the pressure sensor 245 , and the APC valve 244 is feedback-controlled based on the measured pressure (pressure regulation) (see step S 103 in FIG. 16 ).
  • the inside of the process chamber 201 is heated by the heater 207 to a desired temperature.
  • an electrical conduction state to the heater 207 is feedback-controlled based on temperature information detected by the temperature sensor 263 such that the inside of the process chamber 201 arrives at a desired temperature distribution (temperature control) (see step S 103 in FIG. 16 ).
  • the boat 217 is rotated by the rotary mechanism 267 to rotate the wafer 200 .
  • an insulating film forming process of forming a ZrO film serving as an insulating film is performed (see step S 104 in FIG. 16 ).
  • the following four steps are sequentially performed in the insulating film forming process.
  • Step S 105 (Insulating Film Forming Process) ⁇ Step S 105 >
  • step S 105 (see FIGS. 16 and 17 , a first process), first, the TEMAZ gas flows.
  • the valve 243 a of the gas supply pipe 232 a is opened and the valve 243 d of the vent line 232 d is closed, the TEMAZ gas flows into the gas supply pipe 232 a via the evaporator 271 a , the mist filter 300 and the gas filter 272 a .
  • the TEMAZ gas flowing through the gas supply pipe 232 a is flow-rate-controlled by the mass flow controller 241 a .
  • the flow-rate-controlled TEMAZ gas is supplied into the process chamber 201 from the gas supply hole 250 a of the nozzle 249 a and exhausted from the gas exhaust pipe 231 .
  • the valve 243 c is opened and an inert gas such as N 2 gas or the like flows into the inert gas supply pipe 232 c .
  • the N 2 gas flowing through the inert gas supply pipe 232 c is flow-rate-controlled by the mass flow controller 241 c .
  • the flow-rate-controlled N 2 gas is supplied into the process chamber 201 and exhausted from the gas exhaust pipe 231 with the TEMAZ gas.
  • the TEMAZ gas is supplied into the process chamber 201 to be reacted with the wafer 200 to form a zirconium-containing layer on the wafer 200 .
  • the operation of the heater 360 of the mist filter 300 is controlled to maintain the temperature of the mist filter main body 350 at a desired temperature.
  • the APC valve 244 is appropriately adjusted to regulate the pressure in the process chamber 201 to a pressure within a range of, for example, 50 to 400 Pa.
  • a supply flow rate of the TEMAZ gas controlled by the mass flow controller 241 a is set to a flow rate within a range of, for example, 0.1 to 0.5 g/min.
  • a time in which the wafer 200 is exposed to the TEMAZ gas, i.e., a gas supply time (an irradiation time) is set to a time within a range of, for example, 30 to 240 seconds.
  • the temperature of the heater 207 is set such that the temperature of the wafer 200 is a temperature within a range of, for example, 150 to 250° C.
  • step S 106 after the zirconium-containing layer is formed, the valve 243 a is closed and the valve 243 d is opened to stop the supply of the TEMAZ gas into the process chamber 201 , and the TEMAZ gas flows through the vent line 232 d .
  • the inside of the process chamber 201 is vacuum-exhausted by the vacuum pump 246 in a state in which the APC valve 244 of the gas exhaust pipe 231 is open, and the TEMAZ gas that is not reacted or has contributed to formation of the zirconium-containing layer and remains in the process chamber 201 is removed from the process chamber 201 .
  • step S 107 after removing the remaining gas in the process chamber 201 , the O 2 gas flows into the gas supply pipe 232 b .
  • the O 2 gas flowing through the gas supply pipe 232 b becomes O 3 gas in the ozonizer 500 .
  • the valve 243 f and the valve 243 b of the gas supply pipe 232 b are opened and the valve 243 g of the vent line 232 g is closed, the O 3 gas flowing through the gas supply pipe 232 b is flow-rate-controlled by the mass flow controller 241 b , supplied into the process chamber 201 from the gas supply hole 250 b of the nozzle 249 b , and exhausted from the gas exhaust pipe 231 .
  • the valve 243 e is opened, and the N 2 gas flows into the inert gas supply pipe 232 e .
  • the N 2 gas is supplied into the process chamber 201 and exhausted from the gas exhaust pipe 231 with the O 3 gas.
  • the O 3 gas is supplied into the process chamber 201 , the zirconium-containing layer formed on the wafer 200 is reacted with the O 3 gas to form a ZrO layer.
  • the APC valve 244 is appropriately adjusted such that the pressure in the process chamber 201 arrives at a pressure within a range of, for example, 50 to 400 Pa.
  • a supply flow rate of the O 3 gas controlled by the mass flow controller 241 b is set to a flow rate within a range of, for example, 10 to 20 slm.
  • a time in which the wafer 200 is exposed to the O 3 gas, i.e., a gas supply time (an irradiation time) is set to a time within a range of, for example, 60 to 300 seconds.
  • the temperature of the heater 207 is set such that the temperature of the wafer 200 is set to a temperature within a range of 150 to 250° C. similar to step 105 .
  • step S 108 ( FIGS. 16 and 17 , a fourth process)
  • the valve 243 b of the gas supply pipe 232 b is closed and the valve 243 g is opened to stop the supply of the O 3 gas into the process chamber 201 , and the O 3 gas flows through the vent line 232 g .
  • the inside of the process chamber 201 is vacuum-exhausted by the vacuum pump 246 in a state in which the APC valve 244 of the gas exhaust pipe 231 is open, the O 3 gas that is not reacted or has contributed to oxidation and remains in the process chamber 201 is removed from the process chamber 201 .
  • supply of the N 2 gas into the process chamber 201 is maintained in a state in which the valve 243 e is open.
  • the O 2 gas or the like may be used as the oxygen-containing gas.
  • steps S 105 to S 108 are set as one cycle and the cycle is performed at least one time (step S 109 ), an insulating film containing zirconium and oxygen and having a predetermined film thickness, i.e., a ZrO film, can be formed on the wafer 200 .
  • the above-mentioned cycle may be repeated a plurality of times. Accordingly, a deposition film of the ZrO film is formed on the wafer 200 .
  • the valve 243 a of the gas supply pipe 232 a is closed, the valve 243 b of the gas supply pipe 232 b is closed, the valve 243 c of the inert gas supply pipe 232 c is opened, the valve 243 e of the inert gas supply pipe 232 e is opened, and the N 2 gas flows into the process chamber 201 .
  • the N 2 gas serves as a purge gas, and thus the inside of the process chamber 201 is purged with an inert gas to remove the gas remaining in the process chamber 201 from the process chamber 201 (purge, step S 110 ).
  • the atmosphere in the process chamber 201 is replaced with the inert gas, and the pressure in the process chamber 201 returns to a normal pressure (return to an atmospheric pressure, step S 111 ).
  • the seal cap 219 is lowered by the boat elevator 115 and a lower end of a manifold 209 is opened, and simultaneously, the processed wafer 200 , which is held by the boat 217 , is unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading, step S 112 ).
  • the processed wafer 200 is discharged from the boat 217 (wafer discharge, step S 112 ).
  • the film-forming of the ZrO film was performed using the substrate processing furnace of the above-mentioned embodiment. In addition, for the purpose of comparison, the film-forming of the ZrO film was performed without installing the mist filter 300 . In the configuration in which the mist filter 300 was not installed, the film-forming was performed under conditions in which an evaporation source material TEMAZ was 0.45 g, a supply time was 300 sec, and a cycle number was 75 cycles. Step coverage in the film-forming was 81%.
  • the mist filter 300 since an evaporation flow rate could be increased, when the film-forming was performed under conditions in which the evaporation source material TEMAZ was 3 g, the supply time was 60 sec, and the cycle number was 75 cycles, the step coverage was 91%, which led to improvement of the step coverage. In addition, generation of the particles could be suppressed.
  • the bad evaporation can be suppressed. As a result, the following effects can be obtained.
  • the gas filter clogging can be suppressed, and the maintenance can be reduced or the filter exchange period can be increased.
  • the technique using the mist filter 300 may be applied to other types of films, for example, a high permittivity (high-k) film such as ZrO, HfO, or the like, or a kind of film using an evaporator (in particular, a kind of film using a gas that can easily cause bad evaporation or requiring a large flow rate).
  • a high permittivity (high-k) film such as ZrO, HfO, or the like
  • a kind of film using an evaporator in particular, a kind of film using a gas that can easily cause bad evaporation or requiring a large flow rate.
  • the technique using the mist filter 300 may be applied to a kind of film using liquid source having a vapor pressure.
  • the technique using the mist filter 300 may be applied to the case of forming a metal carbide film of a metal nitride film including at least one metal element such as titanium (Ti), tantalum (Ta), cobalt (Co), tungsten (W), molybdenum (Mo), ruthenium (Ru), yttrium (Y), lanthanum (La), zirconium (Zr), hafnium (Hf), nickel (Ni), or the like, or a silicide film in which silicon (Si) is added to the above-mentioned film.
  • a metal element such as titanium (Ti), tantalum (Ta), cobalt (Co), tungsten (W), molybdenum (Mo), ruthenium (Ru), yttrium (Y), lanthanum (La), zirconium (Zr), hafnium (Hf), nickel (Ni), or the like, or a silicide film in which silicon (Si) is added to the above
  • titanium chloride (TiCl 4 ), tetrakis(dimethylamino)titanium (TDMAT, Ti[N(CH 3 ) 2 ] 4 ), tetrakis(diethylamino)titanium (TDEAT, Ti[N(CH 2 CH 3 ) 2 ] 4 ), or the like may be used as a Ti-containing source material
  • tantalum chloride (TaCl 4 ) or the like may be used as a Ta-containing source material
  • Co(AMD)[(tBu)NC(CH 3 )N(tBu) 2 Co] or the like may be used as a Co-containing source material
  • tungsten fluoride (WF 6 ) or the like may be used as a W-containing source material
  • molybdenum chloride (MoCl 3 or MoCl 5 ) or the like may be used as a Mo-containing source material, 2,4-dimethlypentadienyl(ethylcyclopen
  • TiCN, TiAlC, or the like may be used as a metal carbide film containing Ti.
  • TiCl 4 , Hf[C 5 H 4 (CH 3 )] 2 (CH 3 ) 2 and NH 3 may be used as a source material of TiCN.
  • TiCl 4 and trimethylaluminum (TMA, (CH 3 ) 3 Al) may be used as a source material of TiAlC.
  • TiCl 4 , TMA and propylene (C 3 H 6 ) may be used as a source material of TiAlC.
  • TiAlN or the like may be used as a metal nitride film containing Ti.
  • TiCl 4 , TMA and NH 3 may be used as a source material of TiAlN.
  • an amount of particles generated when liquid source is used can be suppressed, and the liquid source can be efficiently evaporated to be supplied into a process chamber.
  • a method of manufacturing a semiconductor device including: (a) loading a substrate into a process chamber; (b) evaporating a source material by sequentially flowing the source material to an evaporator and a mist filter including one or more first plates and one or more second plates; (c) supplying the source material evaporated in the step (b) into the process chamber to process the substrate; and (d) unloading the substrate from the process chamber, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • the one or more first holes are disposed near an outer circumference of each of the one or more first plates
  • the one or more second holes are disposed near a center of each of the one or more second plates
  • the one or more first plates and the one or more second plates are alternately disposed
  • the step (b) includes evaporating the source material passed through the evaporator by alternately flowing the source material through the one or more first holes and the one or more second holes.
  • step (b) includes evaporating the source material sequentially flown through the evaporator and the mist filter by further flowing the source material through a gas filter.
  • a method of manufacturing a substrate including: (a) loading a substrate into a process chamber; (b) evaporating a source material by sequentially flowing the source material to an evaporator and a mist filter including one or more first plates and one or more second plates; (c) supplying the source material evaporated in the step (b) into the process chamber to process the substrate; and (d) unloading the substrate from the process chamber, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • step (b) includes evaporating the source material sequentially flown through the evaporator and the mist filter by further flowing the source material through a gas filter.
  • a program performed by a control unit including the sequences of: (a) loading a substrate into a process chamber; (b) evaporating a source material by sequentially flowing the source material to an evaporator and a mist filter including one or more first plates and one or more second plates; (c) supplying the source material evaporated in the step (b) into the process chamber to process the substrate; and (d) unloading the substrate from the process chamber, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • the one or more first holes are disposed near an outer circumference of each of the one or more first plates
  • the one or more second holes are disposed near a center of each of the one or more second plates
  • the one or more first plates and the one or more second plates are alternately disposed
  • the step (b) includes evaporating the source material passed through the evaporator by alternately flowing the source material through the one or more first holes and the one or more second holes.
  • the non-transitory computer-readable recording medium according to Supplementary Note 10, wherein the one or more first holes are disposed near an outer circumference of each of the one or more first plates, the one or more second holes are disposed near a center of each of the one or more second plates, and the one or more first plates and the one or more second plates are alternately disposed, and wherein the step (b) includes evaporating the source material passed through the evaporator by alternately flowing the source material through the one or more first holes and the one or more second holes.
  • a substrate processing apparatus including: a process chamber configured to accommodate a substrate; a process gas supply system configured to supply a process gas into the process chamber; and an exhaust system configured to exhaust the process chamber, wherein the process gas supply system includes: an evaporator configured to receive a source material; and a mist filter disposed at a downstream side of the evaporator, and including one or more first plates and one or more second plates, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • the substrate processing apparatus wherein the one or more first holes are disposed near an outer circumference of each of the one or more first plates, the one or more second holes are disposed near a center of each of the one or more second plates, and the one or more first plates and the one or more second plates are alternately disposed.
  • the substrate processing apparatus according to Supplementary Note 13 or 14, wherein the process gas supply system further includes a gas filter disposed at a downstream side of the mist filter.
  • mist filter further includes a heater configured to heat the one or more first plates and the one or more second plates.
  • each of the one or more first plates and the one or more second plates includes a metal.
  • each of the one or more first plates and the one or more second plates includes a plate section including one of the one or more first holes and the one or more second holes; and an outer circumferential section disposed at an outer circumference of the plate section, the outer circumferential section being thicker than the plate section, and
  • the outer circumferential section of one of the one or more first plates is in contact with the outer circumferential section of one of the one or more second plates adjacent to the outer circumferential section of the one of the one or more first plates in a manner that a space is provided between the plate section of the one of the one or more first plates and the plate section of the one of the one or more second plates.
  • An evaporation system including: an evaporator configured to receive a source material; and a mist filter disposed at a downstream side of the evaporator and including one or more first plates and one or more second plates, wherein each of the one or more first plates includes one or more first holes, and each of the one or more second plates includes one or more second holes disposed at different positions from those of the one or more first holes.
  • mist filter further includes a heater configured to heat the one or more first plates and the one or more second plates.
  • a mist filter constituted by assembling a plurality of at least two types of plates including holes disposed at different positions.
  • mist filter according to Supplementary Note 29, wherein the mist filter is constituted by alternately disposing a first plate in which a plurality of holes are disposed near an outer circumference thereof and a second plate in which a plurality of holes are disposed near a center thereof.

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150027643A1 (en) * 2013-07-25 2015-01-29 Samsung Display Co., Ltd. Evaporation apparatus
US20170121814A1 (en) * 2015-11-02 2017-05-04 Imec Vzw Apparatus and Method for Delivering a Gaseous Precursor to a Reaction Chamber
US9863041B2 (en) * 2014-10-08 2018-01-09 Lam Research Corporation Internally heated porous filter for defect reduction with liquid or solid precursors
US20180286662A1 (en) * 2017-03-28 2018-10-04 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus
US10767260B2 (en) 2017-03-27 2020-09-08 Kokusai Electric Corporation Substrate processing apparatus, vaporization system and mist filter
US11823946B2 (en) 2017-09-25 2023-11-21 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10343907B2 (en) * 2014-03-28 2019-07-09 Asm Ip Holding B.V. Method and system for delivering hydrogen peroxide to a semiconductor processing chamber
US9982341B2 (en) * 2015-01-30 2018-05-29 Lam Research Corporation Modular vaporizer
KR102302154B1 (ko) * 2019-07-24 2021-09-15 세메스 주식회사 배관 드라이 장치 및 기판 처리 장치
KR102660572B1 (ko) * 2021-11-23 2024-04-26 주식회사 레이크머티리얼즈 필터 모듈 및 그를 포함하는 유기금속 화합물 공급 장치

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3693457A (en) * 1971-02-24 1972-09-26 Battelle Development Corp Source test cascade impactor
US4419107A (en) * 1980-11-10 1983-12-06 Roydhouse Richard H Mercury filtering apparatus and method
US5383970A (en) * 1991-12-26 1995-01-24 Canon Kabushiki Kaisha Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said method
US6331211B1 (en) * 1998-09-21 2001-12-18 Advanced Technology Material, Inc. Method and apparatus for forming low dielectric constant polymeric films
US20020014449A1 (en) * 1995-06-08 2002-02-07 Luis Rios Separation systems and methods
US6409839B1 (en) * 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
US20030198741A1 (en) * 2002-04-19 2003-10-23 Ulvac, Inc. Film-forming apparatus and film-forming method
US20050006799A1 (en) * 2002-07-23 2005-01-13 Gregg John N. Method and apparatus to help promote contact of gas with vaporized material
US20050147749A1 (en) * 2004-01-05 2005-07-07 Msp Corporation High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition
US20070089674A1 (en) * 2002-09-11 2007-04-26 Planar Systems, Inc. Precursor material delivery system with thermal enhancements for atomic layer deposition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391829B2 (ja) * 1991-12-26 2003-03-31 キヤノン株式会社 液体状の原料を用いる化学気相堆積法及び装置
JPH11248884A (ja) * 1998-03-05 1999-09-17 Mitsubishi Heavy Ind Ltd ナトリウムミスト捕集用フィルタ
US6474077B1 (en) * 2001-12-12 2002-11-05 Air Products And Chemicals, Inc. Vapor delivery from a low vapor pressure liquefied compressed gas
JP4288049B2 (ja) * 2002-08-07 2009-07-01 日本パイオニクス株式会社 気化供給方法
JP4185015B2 (ja) * 2003-05-12 2008-11-19 東京エレクトロン株式会社 気化原料の供給構造、原料気化器及び反応処理装置
JP2005057193A (ja) * 2003-08-07 2005-03-03 Shimadzu Corp 気化器
JP4845385B2 (ja) * 2004-08-13 2011-12-28 東京エレクトロン株式会社 成膜装置
JP4724018B2 (ja) * 2006-02-24 2011-07-13 独立行政法人 日本原子力研究開発機構 放射線環境下における排気用フィルタ
JP4973071B2 (ja) * 2006-08-31 2012-07-11 東京エレクトロン株式会社 成膜装置
US20090142488A1 (en) * 2007-11-29 2009-06-04 Willard Ashton Cutler Passivation of porous ceramic articles
JP5385002B2 (ja) * 2008-06-16 2014-01-08 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP5501807B2 (ja) * 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
JP5332916B2 (ja) * 2009-06-03 2013-11-06 株式会社デンソー 炭化珪素単結晶の製造装置
JP2011124416A (ja) * 2009-12-11 2011-06-23 Soken Kogyo Kk 気化器ユニット、これを含むガス輸送路および半導体処理システム

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3693457A (en) * 1971-02-24 1972-09-26 Battelle Development Corp Source test cascade impactor
US4419107A (en) * 1980-11-10 1983-12-06 Roydhouse Richard H Mercury filtering apparatus and method
US5383970A (en) * 1991-12-26 1995-01-24 Canon Kabushiki Kaisha Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said method
US20020014449A1 (en) * 1995-06-08 2002-02-07 Luis Rios Separation systems and methods
US6409839B1 (en) * 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
US6331211B1 (en) * 1998-09-21 2001-12-18 Advanced Technology Material, Inc. Method and apparatus for forming low dielectric constant polymeric films
US20030198741A1 (en) * 2002-04-19 2003-10-23 Ulvac, Inc. Film-forming apparatus and film-forming method
US20050006799A1 (en) * 2002-07-23 2005-01-13 Gregg John N. Method and apparatus to help promote contact of gas with vaporized material
US20070089674A1 (en) * 2002-09-11 2007-04-26 Planar Systems, Inc. Precursor material delivery system with thermal enhancements for atomic layer deposition
US20050147749A1 (en) * 2004-01-05 2005-07-07 Msp Corporation High-performance vaporizer for liquid-precursor and multi-liquid-precursor vaporization in semiconductor thin film deposition

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150027643A1 (en) * 2013-07-25 2015-01-29 Samsung Display Co., Ltd. Evaporation apparatus
US9863041B2 (en) * 2014-10-08 2018-01-09 Lam Research Corporation Internally heated porous filter for defect reduction with liquid or solid precursors
TWI673754B (zh) * 2014-10-08 2019-10-01 美商蘭姆研究公司 加熱過濾器組件
US20170121814A1 (en) * 2015-11-02 2017-05-04 Imec Vzw Apparatus and Method for Delivering a Gaseous Precursor to a Reaction Chamber
US10767260B2 (en) 2017-03-27 2020-09-08 Kokusai Electric Corporation Substrate processing apparatus, vaporization system and mist filter
US20180286662A1 (en) * 2017-03-28 2018-10-04 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus
US10707074B2 (en) * 2017-03-28 2020-07-07 Kokusai Electric Corporation Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus
US10910217B2 (en) * 2017-03-28 2021-02-02 Kokusai Electric Corporation Method for manufacturing semiconductor device, non-transitory computer-readable recording medium, and substrate processing apparatus
US11823946B2 (en) 2017-09-25 2023-11-21 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

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TWI518830B (zh) 2016-01-21
KR101454605B1 (ko) 2014-10-27
JP6156972B2 (ja) 2017-07-05
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CN103361632A (zh) 2013-10-23
KR20130113976A (ko) 2013-10-16
CN103361632B (zh) 2016-12-28

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