US20130171574A1 - Photoresist pattern trimming methods - Google Patents

Photoresist pattern trimming methods Download PDF

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Publication number
US20130171574A1
US20130171574A1 US13/731,940 US201213731940A US2013171574A1 US 20130171574 A1 US20130171574 A1 US 20130171574A1 US 201213731940 A US201213731940 A US 201213731940A US 2013171574 A1 US2013171574 A1 US 2013171574A1
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Prior art keywords
photoresist pattern
photoresist
trimming
composition
layers
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Abandoned
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US13/731,940
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Cheng-Bai Xu
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Rohm and Haas Electronic Materials LLC
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Rohm and Haas Electronic Materials LLC
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Priority to US13/731,940 priority Critical patent/US20130171574A1/en
Publication of US20130171574A1 publication Critical patent/US20130171574A1/en
Assigned to ROHM AND HAAS ELECTRONIC MATERIALS LLC reassignment ROHM AND HAAS ELECTRONIC MATERIALS LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: XU, CHENG-BAI
Priority to US15/243,937 priority patent/US9996008B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Definitions

  • One approach to achieving nm-scale feature sizes in semiconductor devices is the use of short wavelengths of light, for example, 193 nm or less, during exposure of chemically amplified photoresists.
  • immersion lithography tools have been developed to effectively increase the numerical aperture (NA) of the lens of the imaging device, for example, a scanner having a KrF or ArF light source.
  • NA numerical aperture
  • This is accomplished by use of a relatively high refractive index fluid (i.e., an immersion fluid) between the last surface of the imaging device and the upper surface of the semiconductor wafer.
  • the immersion fluid allows a greater amount of light to be focused into the resist layer than would occur with an air or inert gas medium.
  • the maximum numerical aperture can be increased, for example, from 1.2 to 1.35. With such an increase in numerical aperture, it is possible to achieve a 40 nm half-pitch resolution in a single exposure process, thus allowing for improved design shrink.
  • This standard immersion lithography process is generally not suitable for manufacture of devices requiring greater resolution, for example, for the 32 nm and 22 nm half-pitch nodes.
  • SADP self-aligned double patterning
  • a spacer layer is formed over pre-patterned lines. This is followed by etching to remove all spacer layer material on horizontal surfaces of the lines and spaces, leaving behind only material on the sidewalls of the lines.
  • the original patterned lines are then etched away, leaving behind the sidewall spacers which are used as a mask for etching one or more underlying layers. Since there are two spacers for every line, the line density is effectively doubled.
  • methods of trimming photoresist patterns comprise in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned on an upper surface thereof; (b) forming a photoresist pattern on the one or more layers to be patterned, wherein the photoresist pattern comprises a plurality of features and is formed from a chemically amplified photoresist composition, the photoresist pattern comprising a matrix polymer having acid labile groups; (c) coating a photoresist trimming composition over the photoresist pattern, wherein the trimming composition comprises a matrix polymer, a free acid having fluorine substitution and a solvent, and wherein the trimming composition is free of cross-linking agents; (d) heating the coated semiconductor substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a developing solution to remove the surface region of the photore
  • FIG. 1A-I illustrates a process flow for forming a photolithographic pattern in accordance with the invention.
  • the photoresist trimming compositions include a matrix polymer, a free acid having fluorine substitution and a solvent, and can include optional additional components.
  • the photoresist trimming compositions can provide various benefits such as controllably reduced resist pattern dimensions and improved process window for the formation of isolated patterns such as isolated lines and posts.
  • the matrix polymer allows for the compositions to be coated over the photoresist pattern in the form of a layer having a desired thickness. This will help to ensure the presence of a sufficient content of acid for interaction with the photoresist pattern surface.
  • the matrix polymer should have good solubility in the developer solution to be used in the trimming process.
  • the matrix polymer can be soluble in an aqueous alkaline developer, preferably aqueous quaternary ammonium hydroxide solutions such as aqueous tetramethylammonium hydroxide, or in water.
  • the dissolution rate of a dried layer of the trimming composition should be greater than that of the photoresist pattern surface region to be removed by the developer solution.
  • the matrix polymer typically exhibits a developer dissolution rate of 100 ⁇ /second or higher, preferably 1000 ⁇ /second or higher.
  • the matrix polymer is soluble in the solvent of the trimming composition, described herein.
  • the matrix polymer can be chosen, for example, from polyvinyl alcohols, polyacrylic acids, polyvinyl pyrrolidones, polyvinyl amines, polyvinyl acetals, poly(meth)acrylates and combinations thereof.
  • the polymer contains one or more functional group chosen from —OH, —COOH, —SO 3 H, SiOH, hydroxyl styrene, hydroxyl naphthalene, sulfonamide, hexafluoroisopropyl alcohol, anhydrates, lactones, esters, ethers, allylamine, pyrolidones and combinations thereof.
  • the content of the matrix polymer in the composition will depend, for example, on the target thickness of the layer, with a higher polymer content being used for thicker layers.
  • the matrix polymer is typically present in the compositions in an amount of from 80 to 99 wt %, more typically from 90 to 98 wt %, based on total solids of the trimming composition.
  • the weight average molecular weight of the polymer is typically less than 400,000, preferably from 3000 to 50,000, more preferably from 3000 to 25,000.
  • Polymers useful in the overcoat compositions can be homopolymers or can be copolymers having a plurality of distinct repeat units, for example, two, three or four distinct repeat units.
  • the trimming compositions typically include a single polymer, but can optionally include one or more additional polymer. Suitable polymers and monomers for use in the overcoat compositions are commercially available and/or can readily be made by persons skilled in the art.
  • the trimming compositions further include one or more free acid having fluorine substitution.
  • the free acid with heat can cleave the bond of acid labile groups in the photoresist pattern.
  • Suitable acids include both aromatic and non-aromatic acids having fluorine substitution.
  • the acid is a strong acid such as sulfonic acid having at least one fluorine substitution.
  • the non-aromatic acids have at least one fluorine substituent at the alpha position of the acid group.
  • Exemplary suitable acids include the following: CF 3 SO 3 H, C 4 F 9 SO 3 H, CH 3 CH 2 CF 2 CF 2 SO 3 H, HOCH 2 CH 2 CF 2 CF 2 SO 3 H,
  • the trimming compositions further include a solvent or solvent mixture.
  • Suitable solvent materials to formulate and cast the trimming compositions exhibit excellent solubility characteristics with respect to the non-solvent components of the trimming composition, but do not appreciably dissolve the underlying photoresist pattern so as to minimize intermixing.
  • the solvent is typically chosen from water, organic solvents and mixtures thereof.
  • Suitable organic solvents for the overcoat composition include, for example: alkyl esters such as alkyl propionates such as n-butyl propionate, n-pentyl propionate, n-hexyl propionate and n-heptyl propionate, and alkyl butyrates such as n-butyl butyrate, isobutyl butyrate and isobutyl isobutyrate; ketones such as 2,5-dimethyl-4-hexanone and 2,6-dimethyl-4-heptanone; aliphatic hydrocarbons such as n-heptane, n-nonane, n-octane, n-decane, 2-methylheptane, 3-methylheptane, 3,3-dimethylhexane and 2,3,4-trimethylpentane, and fluorinated aliphatic hydrocarbons such as perfluoroheptane; and alcohols such as straight, branched
  • the trimming compositions may include optional additives.
  • the trimming composition can include an additional component that reacts with the surface region of the resist pattern, rendering it soluble in the organic solvent developer.
  • This component preferably contains functional groups chosen from —OH, —NH, —SH, ketones, aldehydes, —SiX wherein X is a halogen, vinyl ethers and combinations thereof.
  • NTD negative tone development
  • This reaction results in a polarity change of the surface, rendering the surface soluble in the organic solvent developer, for example, 2-heptanone or n-butyl acetate.
  • organic solvent developer for example, 2-heptanone or n-butyl acetate.
  • Such component if used is typically present in an amount of from 0.1 to 10 wt % based on total solids of the trimming composition.
  • the trimming composition can further include a surfactant.
  • Typical surfactants include those which exhibit an amphiphilic nature, meaning that they can be both hydrophilic and hydrophobic at the same time.
  • Amphiphilic surfactants possess a hydrophilic head group or groups, which have a strong affinity for water and a long hydrophobic tail, which is organophilic and repels water.
  • Suitable surfactants can be ionic (i.e., anionic, cationic) or nonionic.
  • Further examples of surfactants include silicone surfactants, poly(alkylene oxide) surfactants, and fluorochemical surfactants.
  • Suitable non-ionic surfactants include, but are not limited to, octyl and nonyl phenol ethoxylates such as TRITON® X-114, X-100, X-45, X-15 and branched secondary alcohol ethoxylates such as TERGITOLTM TMN-6 (The Dow Chemical Company, Midland, Mich. USA).
  • Still further exemplary surfactants include alcohol (primary and secondary) ethoxylates, amine ethoxylates, glucosides, glucamine, polyethylene glycols, poly(ethylene glycol-co-propylene glycol), or other surfactants disclosed in McCutcheon's Emulsifiers and Detergents , North American Edition for the Year 2000 published by Manufacturers Confectioners Publishing Co. of Glen Rock, N.J.
  • Nonionic surfactants that are acetylenic diol derivatives also can be suitable.
  • Such surfactants are commercially available from Air Products and Chemicals, Inc. of Allentown, Pa. and sold under the trade names of SURFYNOL® and DYNOL®.
  • Additional suitable surfactants include other polymeric compounds such as the tri-block EO-PO-EO co-polymers PLURONIC® 25R2, L121, L123, L31, L81, L 101 and P123 (BASF, Inc.). Such surfactant and other optional additives if used are typically present in the composition in minor amounts such as from 0.01 to 10 wt % based on total solids of the trimming composition.
  • the trimming compositions are free of cross-linking agents as such materials can result in a dimensional increase of the resist pattern.
  • the trimming compositions are free of basic quenchers and base generators as such compounds may neutralize the effects of the acid component in the trimming compositions.
  • the photoresist trimming compositions can be prepared following known procedures.
  • the compositions can be prepared by dissolving solid components of the composition in the solvent components.
  • the desired total solids content of the compositions will depend on factors such as the desired final layer thickness.
  • the solids content of the trimming compositions is from 1 to 10 wt %, more preferably from 1 to 5 wt %, based on the total weight of the composition.
  • FIG. 1A-I illustrates an exemplary process flow for forming a photolithographic pattern using a photoresist pattern trimming technique. While the illustrated process flow is of a positive tone development process, the invention is also applicable to negative tone development (NTD).
  • NTD negative tone development
  • FIG. 1A depicts in cross-section a substrate 100 which may include various layers and features.
  • the substrate can be of a material such as a semiconductor, such as silicon or a compound semiconductor (e.g., III-V or II-VI), glass, quartz, ceramic, copper and the like.
  • the substrate is a semiconductor wafer, such as single crystal silicon or compound semiconductor wafer, and may have one or more layers and patterned features formed on a surface thereof.
  • One or more layers to be patterned 102 may be provided over the substrate 100 .
  • the underlying base substrate material itself may be patterned, for example, when it is desired to form trenches in the substrate material. In the case of patterning the base substrate material itself, the pattern shall be considered to be formed in a layer of the substrate.
  • the layers to be etched can be formed by various techniques, for example, chemical vapor deposition (CVD) such as plasma-enhanced CVD, low-pressure CVD or epitaxial growth, physical vapor deposition (PVD) such as sputtering or evaporation, or electroplating.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • the particular thickness of the one or more layers to be etched 102 will vary depending on the materials and particular devices being formed.
  • a hard mask layer 103 and/or a bottom antireflective coating (BARC) 104 over which a photoresist layer 106 is to be coated it may be desired to dispose over the layers 102 a hard mask layer 103 and/or a bottom antireflective coating (BARC) 104 over which a photoresist layer 106 is to be coated.
  • BARC bottom antireflective coating
  • Use of a hard mask layer may be desired, for example, with very thin resist layers, where the layers to be etched require a significant etching depth, and/or where the particular etchant has poor resist selectivity.
  • the resist patterns to be formed can be transferred to the hard mask layer 103 which, in turn, can be used as a mask for etching the underlying layers 102 .
  • Suitable hard mask materials and formation methods are known in the art.
  • a post-exposure bake is performed.
  • the PEB can be conducted, for example, on a hotplate or in an oven. Conditions for the PEB will depend, for example, on the particular photoresist composition and layer thickness.
  • the PEB is typically conducted at a temperature of from about 80 to 150° C., and a time of from about 30 to 90 seconds.
  • a latent image defined by the boundary between polarity-switched and unswitched regions (corresponding to exposed and unexposed regions, respectively) is thereby formed.
  • the resist pattern for example, the plurality of lines and/or posts have a duty ratio of 1:2 or more, 1:1.5 or more or 1:1 or more before trimming.
  • duty ratio is defined as the ratio of linewidth or post diameter (L) to the space length (S) between adjacent lines or posts, respectively (i.e., L:S).
  • L linewidth or post diameter
  • S space length
  • a higher duty ratio refers to a higher density of lines or posts
  • a lower duty ratio refers to a lower density of (i.e., more isolated) lines or posts.
  • the duty ratio prior to trimming is L 1 :S 1 .
  • the substrate is next baked to remove solvent in the trimming layer, to allow for the free acid to diffuse into the surface of the underlying resist pattern 106 ′ and the polarity-changing reaction in the resist pattern surface region 118 .
  • the bake can be conducted on a hotplate or in an oven 120 , with a hotplate being typical. Suitable bake temperatures are greater than 50° C., for example, greater than 70° C., greater than 90° C., greater than 120° C. or greater than 150° C., with a temperature of from 70 to 160° C. and a time of from about 30 to 90 seconds being typical. While a single baking step is typical, multiple-step baking can be used and may be useful for resist profile adjustment.
  • the duty ratio of the resist pattern after trimming (L 2 :S 2 ) is typically 1:2 or less, 1:3 or less or 1:4 or less. In the case of a double patterning process, a typical duty ratio is about 1:1 before trimming and about 1:3 after trimming.
  • a spacer layer is next formed over the trimmed photoresist pattern and the upper surface of the substrate using known techniques.
  • the spacer layer is typically formed of a material chosen from silicon nitrides, silicon oxides and silicon oxynitrides. Such materials can be deposited by various techniques, with chemical vapor deposition (CVD) such as plasma enhanced CVD being typical. This is followed by etching to remove all spacer layer material on horizontal surfaces of the lines and spaces, leaving behind spacers 120 on sidewalls of the photoresist pattern, as shown in FIG. 1F .
  • the BARC layer 104 is selectively etched using the spacers 120 as an etch mask, exposing the underlying hardmask layer 103 .
  • the hardmask layer is next selectively etched, again using the spacers 120 as an etch mask, resulting in patterned BARC and hardmask layers 104 ′, 103 ′, as shown in FIG. 1H .
  • Suitable etching techniques and chemistries for etching the BARC layer and hardmask layer are known in the art and will depend, for example, on the particular materials of these layers. Dry-etching processes such as reactive ion etching are typical.
  • the spacers 120 and patterned BARC layer 104 ′ are next removed from the substrate using known techniques.
  • EPICTM 3013 ArF positive tone photoresist (Rohm and Haas Electronic Materials LLC) was spin-coated on an organic bottom antireflective coating (BARC ARTM124 23 nm/ARTM26N 77 nm (Rohm and Haas Electronic Materials LLC)) over 12 inch silicon wafers and softbaked (SB) at 110° C. for 60 seconds, to a thickness of 900 ⁇ .
  • OpticoatTM OC2000 topcoat material (Rohm and Haas Electronic Materials LLC) was coated on the resist to form an immersion topcoat layer.
  • the coated wafers were treated with 0.26N (normal) aqueous tetramethylammonium hydroxide solution to develop the imaged resist layers to form 50 nm line and 80 nm space patterns. Linewidth was measured for one of the patterned wafers.
  • a 90 nm thick layer of the trimming composition of Example 1 (PTC 1) was spin-coated over another of the patterned wafers, and baked at 90° C. for 30 seconds.
  • the wafer was then developed in 2.38% TMAH developer for 12 seconds with a TEL Lithus GP nozzle.
  • the resist profile was visually observed by SEM and linewidth measurements were made. The results are shown in Table 1.
  • Example 5 The procedures of Example 5 were repeated except that the trimming composition of Example 2 (PTC 2) was used.
  • UVTM210 KrF positive tone photoresist (Rohm and Haas Electronic Materials LLC) was spin coated on an organic bottom antireflective coating (ARTM3 60 nm/Si (Rohm and Haas Electronic Materials LLC) over 8 inch silicon wafers and softbaked at 130° C. for 60 seconds, to a thickness of 3000 ⁇ .
  • the coated wafers are then treated with 0.26N (normal) aqueous tetramethylammonium hydroxide solution to develop the imaged resist layer.

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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US9448486B2 (en) 2013-12-30 2016-09-20 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and methods
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US20180233353A1 (en) * 2017-02-10 2018-08-16 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
US20180261456A1 (en) * 2017-03-13 2018-09-13 Globalfoundries Inc. Substantially defect-free polysilicon gate arrays
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US10312108B2 (en) * 2017-04-06 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using modified resist layer
US20190243249A1 (en) * 2016-03-30 2019-08-08 Nissan Chemical Corporation Aqueous solution for resist pattern coating and pattern forming methods using the same
US10429740B2 (en) 2015-03-19 2019-10-01 Tokyo Ohka Kogyo Co., Ltd. Method of recovering resist pattern
US11003074B2 (en) 2017-05-01 2021-05-11 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions
CN113930151A (zh) * 2021-10-14 2022-01-14 厦门恒坤新材料科技股份有限公司 一种含可自交联巯基三聚氰胺聚合物的抗反射涂层组合物及其制备方法和图案形成方法
US11506981B2 (en) 2019-05-31 2022-11-22 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and pattern formation methods
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WO2024112434A1 (en) * 2022-11-22 2024-05-30 Tokyo Electron Limited Patterning semiconductor features

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5923312B2 (ja) * 2012-01-20 2016-05-24 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP5776615B2 (ja) * 2012-04-11 2015-09-09 信越化学工業株式会社 パターン形成方法
JP6340304B2 (ja) * 2013-11-29 2018-06-06 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
CN104091863B (zh) * 2014-07-09 2017-03-08 湘能华磊光电股份有限公司 去除led芯粒背镀层的方法
JP6497527B2 (ja) * 2014-09-19 2019-04-10 日産化学株式会社 レジストパターン被覆用塗布液
TWI676863B (zh) * 2014-10-06 2019-11-11 日商東京應化工業股份有限公司 光阻圖型之修整方法
US9696625B2 (en) * 2014-10-17 2017-07-04 Tokyo Ohka Kogyo Co., Ltd. Method of forming resist pattern
JP6483397B2 (ja) * 2014-10-17 2019-03-13 東京応化工業株式会社 レジストパターン形成方法
JP6455370B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
JP6455369B2 (ja) * 2014-10-30 2019-01-23 信越化学工業株式会社 パターン形成方法及びシュリンク剤
US9786503B2 (en) * 2015-04-08 2017-10-10 Tokyo Electron Limited Method for increasing pattern density in self-aligned patterning schemes without using hard masks
TWI846666B (zh) * 2017-02-22 2024-07-01 日商東京威力科創股份有限公司 用以降低微影瑕疵之方法與圖案轉移之方法
CN107146796B (zh) * 2017-04-13 2019-12-31 武汉新芯集成电路制造有限公司 一种提高背面金属栅格分辨率的方法和半导体结构
KR102417180B1 (ko) * 2017-09-29 2022-07-05 삼성전자주식회사 Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법
CN110373649B (zh) * 2019-08-21 2021-09-14 维达力实业(深圳)有限公司 镀层图形的加工方法
CN111128693B (zh) * 2019-12-30 2023-09-22 上海集成电路研发中心有限公司 光刻缺陷修复方法
US11392036B2 (en) * 2020-01-31 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist and method
CN111474833A (zh) * 2020-05-29 2020-07-31 常州时创新材料有限公司 光刻润湿液及其应用
US20220128906A1 (en) * 2020-10-27 2022-04-28 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and methods of trimming photoresist patterns
KR102668700B1 (ko) * 2021-04-20 2024-05-23 엠에이치디 주식회사 반도체 장치의 미세 패턴 형성방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080122125A1 (en) * 2006-11-29 2008-05-29 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180320B1 (en) 1998-03-09 2001-01-30 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby
JP4329216B2 (ja) * 2000-03-31 2009-09-09 Ｊｓｒ株式会社 レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法
US6492075B1 (en) * 2000-06-16 2002-12-10 Advanced Micro Devices, Inc. Chemical trim process
JP2002006512A (ja) 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
JP2002299202A (ja) 2001-03-29 2002-10-11 Sony Corp 半導体装置の製造方法
JP3476080B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
JP3953822B2 (ja) 2002-01-25 2007-08-08 富士通株式会社 レジストパターン薄肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
CN1288719C (zh) 2003-03-10 2006-12-06 联华电子股份有限公司 图案光刻胶的微缩制造过程
US20060257749A1 (en) * 2005-05-16 2006-11-16 Sheng-Yueh Chang Method for reducing critical dimension
JP2007094058A (ja) 2005-09-29 2007-04-12 Elpida Memory Inc パターン形成方法
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US7862982B2 (en) * 2008-06-12 2011-01-04 International Business Machines Corporation Chemical trim of photoresist lines by means of a tuned overcoat material
JP4779028B2 (ja) 2009-02-27 2011-09-21 パナソニック株式会社 パターン形成方法
KR20110060724A (ko) * 2009-11-30 2011-06-08 주식회사 하이닉스반도체 콘택홀 패턴 형성방법
US20110174774A1 (en) 2010-01-21 2011-07-21 Ying-Chih Lin Method of descumming patterned photoresist
JP5507380B2 (ja) * 2010-02-23 2014-05-28 東京応化工業株式会社 パターン形成方法
JP6108832B2 (ja) * 2011-12-31 2017-04-05 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080122125A1 (en) * 2006-11-29 2008-05-29 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162266B2 (en) 2012-12-31 2018-12-25 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming methods
US9666436B2 (en) * 2012-12-31 2017-05-30 Rohm And Haas Electronic Materials Llc Ion implantation methods
US20140187027A1 (en) * 2012-12-31 2014-07-03 Rohm And Haas Electronic Materials Llc Ion implantation methods
US9448486B2 (en) 2013-12-30 2016-09-20 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and methods
US11846885B2 (en) 2013-12-30 2023-12-19 Rohm And Haas Electronic Materials, Llc Topcoat compositions and photolithographic methods
US20150364334A1 (en) * 2014-06-13 2015-12-17 Yool Kang Method of forming patterns and method of manufacturing integrated circuit device
KR20150143169A (ko) * 2014-06-13 2015-12-23 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법
US9613821B2 (en) * 2014-06-13 2017-04-04 Samsung Electronics Co., Ltd. Method of forming patterns and method of manufacturing integrated circuit device
KR102235611B1 (ko) 2014-06-13 2021-04-02 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법
US9753370B2 (en) 2014-08-27 2017-09-05 Dow Global Technologies Llc Multiple-pattern forming methods
US9696629B2 (en) 2014-12-31 2017-07-04 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and methods
US10429740B2 (en) 2015-03-19 2019-10-01 Tokyo Ohka Kogyo Co., Ltd. Method of recovering resist pattern
US10007179B2 (en) 2015-10-31 2018-06-26 Rohm And Haas Electronic Materials Llc Thermal acid generators and photoresist pattern trimming compositions and methods
US10241407B2 (en) 2015-10-31 2019-03-26 Rohm And Haas Electronic Materials Llc Thermal acid generators and photoresist pattern trimming compositions and methods
US9760011B1 (en) 2016-03-07 2017-09-12 Rohm And Haas Electronic Materials Llc Pattern trimming compositions and methods
US9869933B2 (en) 2016-03-07 2018-01-16 Rohm And Haas Electronic Materials Llc Pattern trimming methods
US11009795B2 (en) * 2016-03-30 2021-05-18 Nissan Chemical Corporation Aqueous solution for resist pattern coating and pattern forming methods using the same
US20190243249A1 (en) * 2016-03-30 2019-08-08 Nissan Chemical Corporation Aqueous solution for resist pattern coating and pattern forming methods using the same
US20180233353A1 (en) * 2017-02-10 2018-08-16 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
US20180233352A1 (en) * 2017-02-10 2018-08-16 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
US10388521B2 (en) * 2017-02-10 2019-08-20 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
US10727055B2 (en) * 2017-02-10 2020-07-28 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
US10217633B2 (en) * 2017-03-13 2019-02-26 Globalfoundries Inc. Substantially defect-free polysilicon gate arrays
US20180261456A1 (en) * 2017-03-13 2018-09-13 Globalfoundries Inc. Substantially defect-free polysilicon gate arrays
US10312108B2 (en) * 2017-04-06 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using modified resist layer
US11003074B2 (en) 2017-05-01 2021-05-11 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions
US11796916B2 (en) 2017-05-01 2023-10-24 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions
US11506981B2 (en) 2019-05-31 2022-11-22 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and pattern formation methods
US11754927B2 (en) 2019-05-31 2023-09-12 Rohm And Haas Electronic Materials Llc Photoresist pattern trimming compositions and pattern formation methods
CN113930151A (zh) * 2021-10-14 2022-01-14 厦门恒坤新材料科技股份有限公司 一种含可自交联巯基三聚氰胺聚合物的抗反射涂层组合物及其制备方法和图案形成方法
WO2024112434A1 (en) * 2022-11-22 2024-05-30 Tokyo Electron Limited Patterning semiconductor features

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