US20120006786A1 - Method and system for preparing a sample - Google Patents

Method and system for preparing a sample Download PDF

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Publication number
US20120006786A1
US20120006786A1 US13/172,886 US201113172886A US2012006786A1 US 20120006786 A1 US20120006786 A1 US 20120006786A1 US 201113172886 A US201113172886 A US 201113172886A US 2012006786 A1 US2012006786 A1 US 2012006786A1
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US
United States
Prior art keywords
mask
sample
edge area
imaging device
manipulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/172,886
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English (en)
Inventor
Dimitry BOGUSLAVSKY
Colin Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Camtek Ltd
Original Assignee
Camtek Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Camtek Ltd filed Critical Camtek Ltd
Priority to US13/172,886 priority Critical patent/US20120006786A1/en
Publication of US20120006786A1 publication Critical patent/US20120006786A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24455—Transmitted particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching

Definitions

  • the invention relates to methods and systems for preparing a sample for transmission electron microscopy.
  • the sample holder element is much thicker than few microns and can be held by a manipulator.
  • the sample holder element can be glued or otherwise connected to the sample.
  • the edge area of the sample—or an area near the edge area of the sample can be thinned by a mechanical process and then be further thinned by an ion miller to provide a very thin area that can be transparent to electrons and can be used as a TEM sample.
  • FIG. 1 illustrates a prior art initial sample 21 .
  • the initial sample 21 includes a sample holder element 29 and a sample 28 .
  • the sample holder element 29 is shaped as a half of circle.
  • the linear edge of the sample holder element 29 is connected to a first edge of the sample 28 .
  • the upper portion of the sample 28 is thinned to provide a pre-thinned area 21 ( 2 ) that ends with edge 25 .
  • the imaging device optical axis may be normal to a milling tool optical axis.
  • the manipulator may rotate the mask and the initial sample by ninety degrees so that they face the ion miller.
  • the milling may include milling the sample while rotating a milling beam about the optical axis of the ion miller.
  • the system may include wherein the manipulator may be arranged to change a spatial relationship between the mask and the partially milled based on thickness feedback information obtained after a milling of the partially milled sample.
  • the imaging device optical axis may be normal to a milling tool optical axis; and wherein the manipulator may be arranged to rotate the mask and the initial sample until the mask and the initial sample face the ion miller.
  • the edge area of the initial sample may have a thickness of at least one micros and wherein the system may be arranged to mill the edge area of the milled sample until a thickness of the edge area of the milled sample does not exceed 50 nanometers.
  • the ion miller may be arranged to mill while rotating a milling beam about the optical axis of the ion miller.
  • the ion miller may be arranged to remove the exposed portion of the edge area of the partially milled sample.
  • the system may include a controller that may be arranged to stop a milling of the edge area of the partially milled sample based on a thickness of the edge area of the partially milled sample.
  • the system may include a transmissive detector that may be arranged to assist in a monitoring of a thickness of the edge area of the partially milled sample.
  • the transmissive detector assists in the monitoring by providing detection signals that are indicative of the thickness of the edge area of the sample.
  • the detection signals represent known thicknesses and thus can be processed to detect the actual thickness of the edge area.
  • the system may include a controller that may be arranged to automatically stop a milling of the partially milled sample when reaching a desired thickness of the edge area of the partially milled sample.
  • the ion miller may be further arranged to mill the exposed portion of the edge area of the milled sample while the masked portion is being masked by the mask, to provide a further milled sample.
  • the manipulator may be further arranged to:
  • FIG. 1 illustrates a prior art initial sample
  • FIG. 2 illustrates a portion of a system during an alignment stage according to an embodiment of the invention
  • FIG. 3 illustrates a portion of a system during a first milling sequence according to an embodiment of the invention
  • FIG. 4 illustrates a portion of a system during a second milling sequence according to an embodiment of the invention
  • FIG. 6 illustrates a manipulator according to an embodiment of the invention
  • FIG. 8 illustrates a sample holder according to an embodiment of the invention
  • FIG. 12 illustrates an ion miller according to an embodiment of the invention
  • FIG. 14 illustrates a method according to an embodiment of the invention.
  • FIG. 15 illustrates a method according to an embodiment of the invention.
  • the method may include:
  • the system can view the sample continuously and in a real time mode during the entire milling process and may have a fully automatic control of the process accuracy, quality and termination.
  • the system 10 may include:
  • the system 10 may also include a vacuum system 90 , a vacuum chamber 91 , optical microscope 92 , anti-vibration system 94 , base 96 , air-lock 1300 and a base plate 98 .
  • the ion beam unit 40 may include various components (some are illustrated in FIGS. 10 and 12 ) such as a Xe supply unit 42 and an ion gun 44 .
  • the system 10 may generate or receive a mask 50 .
  • the mask can be manufactured by micro-cleaving to provide a highly accurate mask. If the system generates the mask 50 then it includes a micro-cleaving unit (not shown).
  • FIG. 7 illustrates in greater details the initial sample 21 that is held by shuttle 103 , masked by mask 50 .
  • FIG. 7 also illustrates a fixed aperture mask 111 positioned above the initial sample 21 .
  • the ion beam should pass through the aperture of the fixed aperture mask 111 .
  • the fixed aperture mask 111 prevents collateral damage resulting from the ion milling. It is fixed in relation to the initial sample 21 .
  • FIG. 7 also shows an element 333 that may support the initial sample 21 when the initial sample provided from (or to) the lock load.
  • FIG. 7 illustrates the element 333 after the initial sample 21 is taken and placed on shuttle 103 .
  • FIG. 8 illustrates a shuttle 103 that includes two co-perpendicular dove-tails 1031 and 1032 .
  • the shuttle 103 also includes two spaced apart blocks 1033 and 1034 that hold the sample 21 in the narrow space between them.
  • FIG. 9 illustrates various structural elements as well as manipulator engines 131 .
  • the change of spatial relationship is controlled during an alignment process during which the imaging system acquired images of the mask and the partially milled sample to guarantee that the desired alignment is obtained.
  • the alignment may be preceded by moving (for example—rotating) that mask and the partially milled sample until they face the imaging system, performing the alignment and then moving (for example—rotating) the mask and the partially milled sample till they face the ion miller.
  • the system 10 can include a retractable BSE detector, a SE detector or a combination thereof.
  • the viewing of the sample can be accomplished by the retractable BSE detector 32 that is illustrated in FIG. 2 as being located beneath the pole pieces of the objective lens 30 .
  • the TE detector 33 may include three independent parts, which are electrically isolated one from another.
  • a first part referred to as a first bright field TE 33 ( 1 ) detector may be a disk located on the microscope principal axis beneath the sample. It is dedicated to detection of transmitted electrons scattered at small angles.
  • the second part is referred to as a second bright field TE detector 33 ( 2 ) represents a ring coaxial with the first bright field TE detector. It is dedicated to detection of transmitted electrons scattered at small angles but bigger than for first bright field TE-detector.
  • the third part referred to as dark field TE detector 33 ( 3 ) represents a ring coaxial with the second bright field TE detector. It is dedicated to detection of transmitted electrons scattered at relatively large angles.
  • All three of these TE detector parts can be solid-state semiconductor detectors can have an atomic number resolution that equals to approximately 1 and can work in a current mode.
  • the TE detector 33 can be protected by a protective shutter Faraday cup located on its top on the microscope principal axis beneath the sample 21 . It can be dedicated to measure electron probe current in order to provide subsequent calibration of the TE-detector for thickness measurement of a treated sample.
  • FIGS. 11A-11C illustrate a manipulator 100 according to various embodiment of the invention.
  • FIG. 11A is a front view of the manipulator 100
  • FIG. 11B is a top view of the manipulator 100
  • FIG. 11C is a side view of the manipulator 100
  • FIG. 11D is a three-dimensional view of the manipulator 100 , all according to an embodiment of the invention.
  • the manipulator 100 includes two separate subunits 110 and 120 both located on a main rotating stage 130 .
  • the rotating stage 130 is separated by and powered by engines 130 ( 1 )- 130 ( 4 ).
  • the second subunit 120 may manipulate the sample and the mask and may have X, Y, Z and ⁇ stages. In FIG. 6 these stages are denoted as follows: X-stage 100 ( 1 ), Y-stage 100 ( 2 ), Z-stage 100 ( 3 ) and ⁇ stage 100 ( 5 ).
  • the first subunit 110 may manipulate the sample—it may change the spatial relationship between the mask and the sample—for example by moving the mask in relation to any movement introduced by the second sub-unit 120 . It is noted that each of the mask and sample can be moved by sub-units—each can move in relation to each other and not share stages such as rotating stage 130 .
  • the first subunit 110 may have X, Y, Z and ⁇ stages. In either one of FIGS. 6 and 9 these stages are denoted as follows: X-stage 100 ( 11 ), Y-stage (not shown), Z-stage 100 ( 9 ), and ⁇ stage 100 ( 8 ).
  • the second subunit 120 may manipulates the mask and may also manipulate technological accessories such as mask, calibrating plate, apertures, target for deposition etc.
  • the stages are connected between structural elements such as plates, beams, rails, guidelines and the like denoted 101 ( 1 )- 101 ( 5 ).
  • the ion miller 40 (also referred to as ion sputtering system) can have the following capabilities and degrees of freedom:
  • the ion miller 40 may include:
  • FIG. 12 illustrates the ion miller 40 as including a ion beam source assembly 40 ( 1 ), a non-ionized particle supply assembly 40 ( 2 ), an ion beam extractor assembly 40 ( 3 ), an ion beam focusing assembly 40 ( 4 ), an ion beam deflecting sub-assembly 40 ( 5 ), a ion beam first deflecting assembly 40 ( 6 ), and an ion beam second deflecting assembly 40 ( 7 ).
  • the ion beam source assembly 40 ( 1 ) is fed by the non-ionized particle supply assembly 40 ( 2 ) and the ion beam extractor assembly 40 ( 3 ) outputs an ion beam that propagates along an optical axis 41 of the ion miller.
  • the ion beam focusing assembly 40 ( 4 ) focuses the ion beam and feeds the focused ion beam to ion beam first deflecting assembly 40 ( 6 ) that rotates the ion beam and directs it along directions that are spaced apart from the optical axis of the ion miller to provide deflected and rotated ion beam 41 ( 2 ).
  • the ion beam second deflecting assembly 40 ( 7 ) directs the rotating ion beam towards the optical axis, while maintaining the rotation of the ion beam 41 ( 3 ). The rotation constantly changes milling angle and provide a smoother milled sample.
  • FIG. 13A is a schematic cross section of an air lock 1300 and wall 91 ( 1 ) of a vacuum chamber 91 according to an embodiment of the invention.
  • FIG. 13B is a top view of an air lock 1300 , a vacuum chamber 91 and a manipulator 100 according to an embodiment of the invention.
  • FIG. 13B illustrates the air lock before the sample supported by the feeding rod is entered to the vacuum chamber 91 .
  • FIG. 13C is a cross sectional view of an air lock 1300 , a vacuum chamber 91 and a manipulator 100 according to an embodiment of the invention.
  • FIG. 13C illustrates the air lock before the sample supported by the feeding rod is entered to the vacuum chamber 91 .
  • FIG. 13D is a cross sectional view of an air lock 1300 , a vacuum chamber 91 and a manipulator 100 according to an embodiment of the invention.
  • FIG. 13D illustrates the air lock when the sample supported by the feeding rod is positioned in the vacuum chamber 91 .
  • the air lock 1300 function is to allow loading/unloading into the vacuum chamber (denoted 91 in FIG. 10 ) numerous samples and technological accessories such as mask, calibrating plate, apertures, target for deposition etc without venting of a vacuum chamber 91 .
  • the air lock 1300 includes:
  • the air lock 1300 is proximate to an opening in the wall 91 ( 1 ) of the vacuum chamber 91 such that when the shut-off valve 1350 is opened the feeding rod 1305 can enter the vacuum chamber 91 and especially the interior space 91 ( 2 ) of the vacuum chamber 91 .
  • the Air lock 1300 and especially loading opening (space) are vacuumed before the feeding rod 1305 enters the vacuum chamber.
  • the shut-off valve 1350 is closed the air lock 1300 is sealed in a manner that prevents gases to enter the vacuum chamber 91 .
  • the manipulator 100 can include the following stages and these stages can be characterized by the following parameters:
  • Actuator type Piezo motor Actuation modes: stepping & scanning
  • the initial sample and the milled sample can be characterized by the following parameters:
  • Stage 1420 is followed by stage 1430 of providing a mask and the initial sample to a manipulator.
  • Stage 1460 is followed by stage 1470 of changing the spatial relationship between the mask and the partially milled sample (by the manipulator) in order to expose the other side of the edge area of the partially milled sample to the ion miller.
  • FIG. 15 illustrates method 1500 according to an embodiment of the invention.
  • Method 1400 starts by stage 1410 of receiving or generating a mask.
  • the mask can be generated by micro-cleaving to provide a highly accurate mask.
  • An example for micro-cleaving is illustrated in U.S. Pat. No. 6,223,961 titled “Apparatus for cleaving crystals”, which is incorporated herein by reference.
  • Stage 1410 is followed by stage 1420 of receiving or generating an initial sample that has a thickness (near its edge) of few microns—as illustrated in FIG. 1 .
  • the initial sample can be prepared by an ME3 tool of Camtek Ltd. of Israel.
  • Stage 1420 is followed by stage 1430 of providing a mask and the initial sample to a manipulator.
  • Stage 1430 is followed by stage 1440 of aligning the mask and the initial sample ( FIG. 2 ) by using a manipulator, and at least one out of a scanning electron microscope and an optical microscope.
  • the mask is aligned to expose one side of the initial sample to ion milling, and alignment may include moving the mask and/or the initial sample by the manipulator.
  • Stage 1440 is followed by stage 1450 of moving (for example—rotating about an axis) the mask and the initial sample, by the manipulator, while maintaining the alignment so that the mask and initial sample face an ion miller.
  • Stage 1460 is followed by stage 1510 of moving (for example—rotating about an axis) the mask and the partially milled sample, by the manipulator, so that the mask and initial sample face the imaging device.
  • Stage 1520 is followed by stage 1480 of performing a second milling sequence ( FIG. 4 ) that includes milling the other (now exposed) portion of the edge area of the partially milled sample by the ion miller while observing the milling by the scanning electron microscope and (optionally—when the partially milled sample starts to be partially transparent to electrons) by a TEM or STEM detector, until reaching a desired thickness.
  • the milling process can be automatically stopped when the TEM detector 33 indicates that the thickness of the milled sample reached the desired thickness.
  • the milled sample (or at least its milled edge) should include the target to be viewed by the SETM or TEM.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
US13/172,886 2010-07-06 2011-06-30 Method and system for preparing a sample Abandoned US20120006786A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/172,886 US20120006786A1 (en) 2010-07-06 2011-06-30 Method and system for preparing a sample

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36153610P 2010-07-06 2010-07-06
US13/172,886 US20120006786A1 (en) 2010-07-06 2011-06-30 Method and system for preparing a sample

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US20120006786A1 true US20120006786A1 (en) 2012-01-12

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US13/172,886 Abandoned US20120006786A1 (en) 2010-07-06 2011-06-30 Method and system for preparing a sample

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US (1) US20120006786A1 (ko)
EP (1) EP2405462A1 (ko)
JP (1) JP2012018163A (ko)
KR (1) KR101903783B1 (ko)
CN (1) CN102419278A (ko)
SG (1) SG177822A1 (ko)
TW (1) TW201237916A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104913957A (zh) * 2015-05-04 2015-09-16 中国石油化工股份有限公司 Tem原位观察材料基体/钝化膜界面结构的样品制备方法
US20160031755A1 (en) * 2013-04-15 2016-02-04 Schott Ag Method for modifying the transmission of glasses and glass ceramics and glass or glass ceramic articles that can be produced according to the method
US20180306685A1 (en) * 2017-04-25 2018-10-25 Ib Labs, Inc. Device and Method for Cleaving a Liquid Sample
EP4098995A1 (en) * 2021-06-04 2022-12-07 Jeol Ltd. Specimen machining device and specimen machining method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018140903A2 (en) * 2017-01-27 2018-08-02 Howard Hughes Medical Institute Enhanced fib-sem systems for large-volume 3d imaging

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US5525806A (en) * 1993-02-05 1996-06-11 Seiko Instruments Inc. Focused charged beam apparatus, and its processing and observation method
US5852298A (en) * 1995-03-30 1998-12-22 Ebara Corporation Micro-processing apparatus and method therefor
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US20080078750A1 (en) * 2004-08-24 2008-04-03 Sela Semiconductor Engineering Laboratories Ltd. Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof
US20090078060A1 (en) * 2006-09-25 2009-03-26 Moore Thomas M Method and apparatus for transfer of samples in a controlled environment

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JPS6064228A (ja) * 1983-09-20 1985-04-12 Nec Corp 透過型電子顕微鏡試料の作製方法及びその作製装置
IL124199A (en) * 1998-04-23 2001-03-19 Sela Semiconductor Enginering Apparatus for cleaving crystals
US6768110B2 (en) * 2000-06-21 2004-07-27 Gatan, Inc. Ion beam milling system and method for electron microscopy specimen preparation
JP4557130B2 (ja) * 2003-09-16 2010-10-06 日本電子株式会社 試料作製装置
WO2006082585A2 (en) * 2005-02-03 2006-08-10 Sela Semiconductor Engineering Laboratories Ltd. Sample preparation for micro-analysis
JP4675701B2 (ja) * 2005-07-08 2011-04-27 株式会社日立ハイテクノロジーズ イオンミリング装置およびイオンミリング方法
JP4520926B2 (ja) 2005-10-14 2010-08-11 株式会社日立ハイテクノロジーズ 試料解析方法
US7700917B1 (en) * 2007-10-04 2010-04-20 Gatan, Inc. Specimen holder with integral ion beam screen and in situ adjustment
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US4852414A (en) * 1988-01-07 1989-08-01 Leybold Aktiengesellschaft Device for inserting and removing the sample in an analysis oven
US5525806A (en) * 1993-02-05 1996-06-11 Seiko Instruments Inc. Focused charged beam apparatus, and its processing and observation method
US5852298A (en) * 1995-03-30 1998-12-22 Ebara Corporation Micro-processing apparatus and method therefor
US5907157A (en) * 1996-02-01 1999-05-25 Jeol Ltd. Method and apparatus for preparing specimen
US20080078750A1 (en) * 2004-08-24 2008-04-03 Sela Semiconductor Engineering Laboratories Ltd. Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof
US20090078060A1 (en) * 2006-09-25 2009-03-26 Moore Thomas M Method and apparatus for transfer of samples in a controlled environment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160031755A1 (en) * 2013-04-15 2016-02-04 Schott Ag Method for modifying the transmission of glasses and glass ceramics and glass or glass ceramic articles that can be produced according to the method
CN104913957A (zh) * 2015-05-04 2015-09-16 中国石油化工股份有限公司 Tem原位观察材料基体/钝化膜界面结构的样品制备方法
US20180306685A1 (en) * 2017-04-25 2018-10-25 Ib Labs, Inc. Device and Method for Cleaving a Liquid Sample
WO2018200724A1 (en) * 2017-04-25 2018-11-01 Ib Labs, Inc. Device and method for cleaving a liquid sample
US11119012B2 (en) * 2017-04-25 2021-09-14 Ib Labs, Inc. Device and method for cleaving a liquid sample
EP4098995A1 (en) * 2021-06-04 2022-12-07 Jeol Ltd. Specimen machining device and specimen machining method

Also Published As

Publication number Publication date
JP2012018163A (ja) 2012-01-26
TW201237916A (en) 2012-09-16
EP2405462A1 (en) 2012-01-11
KR101903783B1 (ko) 2018-10-02
SG177822A1 (en) 2012-02-28
KR20120004333A (ko) 2012-01-12
CN102419278A (zh) 2012-04-18

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