US20120000986A1 - Canister for deposition apparatus and deposition apparatus using same - Google Patents

Canister for deposition apparatus and deposition apparatus using same Download PDF

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Publication number
US20120000986A1
US20120000986A1 US13/009,279 US201113009279A US2012000986A1 US 20120000986 A1 US20120000986 A1 US 20120000986A1 US 201113009279 A US201113009279 A US 201113009279A US 2012000986 A1 US2012000986 A1 US 2012000986A1
Authority
US
United States
Prior art keywords
canister
main body
deposition apparatus
deposition
control unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/009,279
Other languages
English (en)
Inventor
Min-Jae Jeong
Ki-Yong Lee
Jong-Won Hong
Heung-Yeol Na
Eu-Gene Kang
Seok-rak Chang
Jin-Wook Seo
Tae-Hoon Yang
Yun-Mo CHUNG
Byung-Soo Soo
Byoung-Keon Park
Dong-Hyun Lee
Kil-won Lee
Won-Bong Baek
Jong-Ryuk Park
Bo-Kyung Choi
Ivan Maidanchuk
Jae-Wan Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Assigned to SAMSUNG MOBILE DISPLAY CO., LTD. reassignment SAMSUNG MOBILE DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BAEK, WON-BONG, CHANG, SEOK-RAK, Choi, Bo-Kyung, CHUNG, YUN-MO, HONG, JONG-WON, JEONG, MIN-JAE, JUNG, JAE-WAN, KANG, EU-GENE, LEE, DONG-HYUN, LEE, KIL-WON, LEE, KI-YONG, MAIDANCHUK, IVAN, NA, HEUNG-YEOL, PARK, BYOUNG-KEON, Park, Jong-Ryuk, SO, BYUNG-SOO, YANG, TAE-HOON
Publication of US20120000986A1 publication Critical patent/US20120000986A1/en
Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG MOBILE DISPLAY CO., LTD.
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the described technology relates generally to a canister for a deposition apparatus and a deposition apparatus using the same. More particularly, an aspect of the present invention relates to a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister.
  • Flat panel displays have replaced cathode ray tube displays, due to their characteristics, such as light weight and small size.
  • Typical examples of flat panel displays include liquid crystal displays (LCD) and organic light emitting diode (OLED) displays. Of these displays, the organic light emitting diode displays have excellent luminescence characteristics and viewing angle characteristics, as compared with the liquid crystal displays (LCD) and furthermore do not need a backlight, such that they can be implemented in very small sizes.
  • the organic light emitting diode display is classified into a passive matrix type and an active matrix type in accordance with the operation method, in which the active matrix type includes a circuit using a thin film transistor (TFT).
  • TFT thin film transistor
  • the thin film transistor usually includes a semiconductor layer including a source region, a drain region, and a channel region, a gate electrode, a source electrode and a drain electrode.
  • the semiconductor layer may be polysilicion (polycrystalline silicon (poly-si)) or amorphous silicon (a-si), but the electronmobility of the polysilicon is higher than that of the amorphous silicon, such that the polysilicon is commonly used now.
  • One method of crystallizing the amorphous silicon is a crystallization method using metal.
  • the crystallization method using metal deposits a metal catalyst on a substrate, by using a sputtering process that applies and deposits plasma on a metal target or by an atomic layer deposition (ALD) process that forms an atomic layer of a metal catalyst on a substrate. Thereafter a reaction gas including the metal catalyst is used, and the amorphous silicon with the metal catalyst is crystallized, as a seed, thereby performing crystallization in short time under relatively low temperature.
  • ALD atomic layer deposition
  • the crystallization method using the metal catalyst is required to supply a reaction gas containing a same amount of metal catalyst into a deposition chamber for each deposition in order to achieve uniform crystals.
  • common deposition apparatuses include a canister supplying a reaction gas into a deposition chamber to provide a uniform amount of source material to be vaporized in each deposition. This is achieved by measuring the internal temperature of a main body for evaporating the source material, such as a metal catalyst, with a temperature measuring unit such that the source material can vaporize under the same pressure and temperature.
  • the canister for a deposition apparatus cannot accurately measure the internal temperature of the main body, because the vaporizing source material condenses in the temperature measuring unit. Therefore, the amount of source material contained in the reaction gas supplied to the deposition chamber is not uniform, such that the amount of metal catalyst deposited on the substrate in each deposition process is not uniform. Therefore, it is difficult to stably supply the source material into the chamber, and the amount of metal catalyst contained in the film formed on the substrate in each deposition process is not uniform.
  • An aspect of the present invention provides a canister for a deposition apparatus and a deposition apparatus using the canister, which can accurately measure the internal temperature of the main body where a source material vaporizes by changing the internal structure of the canister such that the vaporizing source material does not condensate in the temperature measuring unit.
  • An exemplary embodiment provides a canister for a deposition apparatus including: a main body where a source material vaporizes; a heating unit heating the main body; and a temperature measuring unit disposed under the main body.
  • a deposition apparatus including: a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas storage to supply a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.
  • the canister for a deposition apparatus and the deposition apparatus using the canister can provide a uniform amount of a metal catalyst in a film formed on a substrate in each deposition process by improving supply stability of a source material, by disposing the temperature measuring unit, which measures the internal temperature of the main body of the canister, under the main body in order to prevent the vaporizing source material from condensing in the temperature measuring unit.
  • FIG. 1 is a schematic view showing a canister for a deposition apparatus according to an exemplary embodiment
  • FIG. 2 is a schematic view showing a deposition apparatus using the canister for a deposition apparatus shown in FIG. 1 .
  • FIG. 1 is a schematic view showing a canister for a deposition apparatus according to an exemplary embodiment of the present invention
  • FIG. 2 is a schematic view showing a deposition apparatus using the canister for a deposition apparatus shown in FIG. 1 .
  • a deposition apparatus includes a deposition chamber 210 performing a deposition process on a substrate S, a canister 100 supplying a source material into the deposition chamber 210 , and a carrier gas supplier 300 supplying a carrier gas into the canister 100 .
  • the canister 100 vaporizes the source material in each deposition process and supplies a reaction gas produced by mixing the vaporized source material with a carrier gas supplied from the carrier gas supplier 300 into the deposition chamber 210 .
  • the canister 100 includes a main body 110 where the source material vaporizes, a heating unit 120 heating the main body 110 , and a temperature measuring unit 130 measuring the internal temperature of the main body 110 .
  • the source material may be metal powder or a liquid-state organic material, which are used in an atomic deposition process.
  • the heating unit 120 vaporizes the source material supplied in the main body 110 by heating the main body 110 and may be disposed outside the main body 110 .
  • the heating unit 120 may be disposed in the exterior wall of the main body 110 .
  • the temperature measuring unit 130 measures the internal temperature of the main body 110 to maintain the internal temperature of the main body 110 at a predetermined level while the source material vaporizes.
  • the temperature measuring unit 130 may be a temperature sensor for easily monitoring the internal temperature of the main body 110 , such as a thermo-couple.
  • the canister 100 according to an exemplary embodiment of the present invention may further include a temperature controller 135 that controls the heating unit 120 in accordance with the temperature measured by the temperature measuring unit 130 .
  • the canister 100 can vaporize some of the source material in each deposition process, after storing the source material in the main body 110 without using an independent source storage 140
  • FIG. 2 illustrates an independent source storage 140 that stores the source material, and which further includes a first supply control unit 410 that controls the amount of source material supplied into the main body 210 from the source storage 140 .
  • the first supply control unit 410 includes a first valve V 1 disposed in a first pipe P 1 connecting the main body 110 with the source storage 140 and a first controller C 1 that controls the first valve V 1 to open/close.
  • the first controller C 1 controls the first valve V 1 to open/close on the basis of the amount of source material supplied into the main body 110 through the first pipe P 1 , and it is more preferable, but not necessary, that only the amount of source material for one time vaporization in each deposition process is supplied into the main body 110 .
  • the deposition chamber 210 performing a deposition process on the substrate S, using a reaction gas supplied from the canister 100 , includes an inlet 220 through which the reaction gas flows into the deposition chamber 210 , a shower head 225 uniformly spraying the reaction gas onto the substrate S, a support chuck 240 supporting the substrate S, and an outlet 230 through which the remaining reaction gas is discharged.
  • the deposition chamber 100 may be an atomic layer deposition (ALD) chamber for an atomic layer deposition process and the support chuck 240 may further include a temperature maintainer (not shown) that maintains the substrate S at a predetermined temperature, for smooth atomic layer deposition process.
  • ALD atomic layer deposition
  • FIGS. 1 and 2 A deposition process using a deposition apparatus according to an exemplary embodiment of the present invention is described with reference to FIGS. 1 and 2 , which allows a predetermined amount of source material to be supplied into the main body 110 by opening the first valve V 1 in the first pipe P 1 positioned between the main body 140 of the canister 100 and the source storage 140 .
  • the first valve V 1 is closed to stop the supply of the source material into the main body 110 and the source material is vaporized by the heating unit 120 .
  • the internal temperature of the main body 110 is measured and monitored by the temperature measuring unit 130 disposed under the main body 110 and the heating unit 120 is controlled on the basis of the temperature measured by the temperature measuring unit 130 .
  • an exemplary embodiment exemplifies when the source material is vaporized after the first valve V 1 is closed
  • the process of vaporizing the source material may be performed simultaneously with the process of supplying the source material into the main body 110 .
  • the carrier gas is supplied into the main body 1110 through a second pipe P 2 disposed between the main body 110 and the carrier gas supplier 300 , such that a reaction gas mixed with the vaporized source material and the carrier gas is produced.
  • a second supply control unit 420 it is preferable, but not necessary, to position a second supply control unit 420 to control a supply of the carrier gas in the second pipe P 2 in order to prevent the carrier gas from flowing into the main body 110 while the source material is supplied into the main body 110 .
  • a third supply control unit 430 in a third pipe P 3 connecting the main body 110 with the deposition chamber 210 in order to prevent an unstable reaction gas from being supplied into the deposition chamber 210 while the source material vaporizes and the reaction gas is produced in the main body 110 .
  • the second supply control unit 420 may include a second valve V 2 and a second controller C 2 that controls the second valve V 2 to open/close
  • the third supply control unit 430 may include a third valve V 3 and a third controller C 3 that controls the third valve V 3 to open/close.
  • the third valve V 3 is opened such that the reaction gas mixed with the vaporizing source material and the carrier gas is supplied into the deposition chamber 210 .
  • the reaction gas supplied in the deposition chamber 210 is uniformly injected onto the substrate S through the inlet 220 of the deposition chamber 210 and a shower head 225 , and the reaction gas that is not deposited on the substrate S is discharged outside the deposition chamber 210 through the outlet 230 .
  • an exhaust pump (not shown) may be disposed at the outlet 230 such that the reaction gas that is not deposited on the substrate S can be discharged with ease.
  • the deposition apparatus may include a fourth pipe P 4 .
  • the fourth pipe P 4 connects the carrier gas supplier 300 with the deposition chamber 210 and is disposed between the second valve V 2 of the second supply control unit 420 and the carrier gas supplier 300 and between the deposition chamber 210 and the third valve V 3 of the third supply control unit 430 .
  • a fourth supply control unit 440 is disposed in the fourth pipe P 4 , in order to remove the reaction gas remaining in the deposition chamber 210 and in the third pipe P 3 , after the deposition process is finished in the deposition chamber 210 .
  • the fourth supply control unit 440 may include a fourth valve V 4 disposed in the fourth pipe P 4 and a fourth controller C 4 that controls the fourth valve V 4 to open/close, similarly to the second supply control unit 420 and the third supply control unit 430 .
  • the canister for a deposition apparatus and the deposition apparatus using the canister according to an exemplary embodiment, it is possible to prevent the source material vaporized by the main body 110 and the reaction gas containing the source material from condensing in the temperature measuring unit, by disposing the temperature measuring unit, measuring the internal temperature of the main body of the canister in which the source material vaporizes, under the main body.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
US13/009,279 2010-06-30 2011-01-19 Canister for deposition apparatus and deposition apparatus using same Abandoned US20120000986A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100062877A KR101287113B1 (ko) 2010-06-30 2010-06-30 증착 장치용 캐니스터 및 이를 이용한 증착 장치
KR10-2010-0062877 2010-06-30

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US20120000986A1 true US20120000986A1 (en) 2012-01-05

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US13/009,279 Abandoned US20120000986A1 (en) 2010-06-30 2011-01-19 Canister for deposition apparatus and deposition apparatus using same

Country Status (4)

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US (1) US20120000986A1 (zh)
KR (1) KR101287113B1 (zh)
CN (1) CN102312218A (zh)
TW (1) TWI490364B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110008540A1 (en) * 2009-07-07 2011-01-13 Samsung Mobile Display Co., Ltd. Canister for deposition apparatus, and deposition apparatus and method using the same
US9101081B2 (en) 2013-01-30 2015-08-04 Hewlett-Packard Development Company, L.P. Data center canopy including turning vanes
WO2022252975A1 (zh) * 2021-05-31 2022-12-08 清华大学 反应器及电极材料制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104962883B (zh) * 2015-07-15 2018-04-06 中国电子科技集团公司第四十六研究所 一种提高二硫化钼薄膜生长均匀性的单独硫源温控工艺
DE112016006167T5 (de) * 2016-01-06 2018-09-27 Health Balance Co., Ltd. Verfahren zur Herstellung einer fermentierten Pulverdispersion aus rotem Ginseng mit maximiertem Aufnahmeverhältnis, die keinen Emulgator enthält
JP6958914B2 (ja) * 2016-07-20 2021-11-02 昭和電工株式会社 ガス供給装置及びガス供給方法
KR20200101141A (ko) * 2019-02-19 2020-08-27 고려대학교 산학협력단 전구체 소스 공급을 위한 금속블록 결합형 히터 어셈블리를 포함하는 증착 장치
KR200494277Y1 (ko) * 2020-10-15 2021-09-08 주식회사 야스 균등 증발원

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US5174855A (en) * 1989-04-28 1992-12-29 Dainippon Screen Mfg. Co. Ltd. Surface treating apparatus and method using vapor
US5527396A (en) * 1992-06-30 1996-06-18 Canon Kabushiki Kaisha Deposited film forming apparatus
US6202653B1 (en) * 1998-03-18 2001-03-20 Tokyo Electron Ltd. Processing solution supplying apparatus, processing apparatus and processing method
US20030072875A1 (en) * 2001-10-11 2003-04-17 Sandhu Gurtej S. Delivery of solid chemical precursors
US20060112883A1 (en) * 2004-11-29 2006-06-01 Kenji Suzuki Replaceable precursor tray for use in a multi-tray solid precursor delivery system
US20070110898A1 (en) * 2002-07-17 2007-05-17 Seshadri Ganguli Method and apparatus for providing precursor gas to a processing chamber

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US6779378B2 (en) * 2002-10-30 2004-08-24 Asm International N.V. Method of monitoring evaporation rate of source material in a container
KR20050004379A (ko) * 2003-07-02 2005-01-12 삼성전자주식회사 원자층 증착용 가스 공급 장치
JP4601535B2 (ja) * 2005-09-09 2010-12-22 株式会社リンテック 低温度で液体原料を気化させることのできる気化器
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5174855A (en) * 1989-04-28 1992-12-29 Dainippon Screen Mfg. Co. Ltd. Surface treating apparatus and method using vapor
US5527396A (en) * 1992-06-30 1996-06-18 Canon Kabushiki Kaisha Deposited film forming apparatus
US6202653B1 (en) * 1998-03-18 2001-03-20 Tokyo Electron Ltd. Processing solution supplying apparatus, processing apparatus and processing method
US20030072875A1 (en) * 2001-10-11 2003-04-17 Sandhu Gurtej S. Delivery of solid chemical precursors
US20070110898A1 (en) * 2002-07-17 2007-05-17 Seshadri Ganguli Method and apparatus for providing precursor gas to a processing chamber
US20060112883A1 (en) * 2004-11-29 2006-06-01 Kenji Suzuki Replaceable precursor tray for use in a multi-tray solid precursor delivery system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110008540A1 (en) * 2009-07-07 2011-01-13 Samsung Mobile Display Co., Ltd. Canister for deposition apparatus, and deposition apparatus and method using the same
US9101081B2 (en) 2013-01-30 2015-08-04 Hewlett-Packard Development Company, L.P. Data center canopy including turning vanes
US9545034B2 (en) 2013-01-30 2017-01-10 Hewlett Packard Enterprise Development Lp Data center canopy including turning vanes
WO2022252975A1 (zh) * 2021-05-31 2022-12-08 清华大学 反应器及电极材料制备方法

Also Published As

Publication number Publication date
KR101287113B1 (ko) 2013-07-17
CN102312218A (zh) 2012-01-11
TW201207147A (en) 2012-02-16
TWI490364B (zh) 2015-07-01
KR20120002140A (ko) 2012-01-05

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