KR101287113B1 - 증착 장치용 캐니스터 및 이를 이용한 증착 장치 - Google Patents

증착 장치용 캐니스터 및 이를 이용한 증착 장치 Download PDF

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Publication number
KR101287113B1
KR101287113B1 KR1020100062877A KR20100062877A KR101287113B1 KR 101287113 B1 KR101287113 B1 KR 101287113B1 KR 1020100062877 A KR1020100062877 A KR 1020100062877A KR 20100062877 A KR20100062877 A KR 20100062877A KR 101287113 B1 KR101287113 B1 KR 101287113B1
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South Korea
Prior art keywords
canister
main body
source material
supply control
control means
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KR1020100062877A
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English (en)
Korean (ko)
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KR20120002140A (ko
Inventor
정민재
이기용
홍종원
나흥열
강유진
장석락
서진욱
양태훈
정윤모
소병수
박병건
이동현
이길원
백원봉
박종력
최보경
마이단축이반
정재완
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삼성디스플레이 주식회사
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Application filed by 삼성디스플레이 주식회사 filed Critical 삼성디스플레이 주식회사
Priority to KR1020100062877A priority Critical patent/KR101287113B1/ko
Priority to CN2011100066236A priority patent/CN102312218A/zh
Priority to TW100101690A priority patent/TWI490364B/zh
Priority to US13/009,279 priority patent/US20120000986A1/en
Publication of KR20120002140A publication Critical patent/KR20120002140A/ko
Application granted granted Critical
Publication of KR101287113B1 publication Critical patent/KR101287113B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020100062877A 2010-06-30 2010-06-30 증착 장치용 캐니스터 및 이를 이용한 증착 장치 KR101287113B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020100062877A KR101287113B1 (ko) 2010-06-30 2010-06-30 증착 장치용 캐니스터 및 이를 이용한 증착 장치
CN2011100066236A CN102312218A (zh) 2010-06-30 2011-01-10 用于沉积装置的罐及使用罐的沉积装置
TW100101690A TWI490364B (zh) 2010-06-30 2011-01-17 用於沉積設備之加熱蒸發器及使用該加熱蒸發器之沉積設備
US13/009,279 US20120000986A1 (en) 2010-06-30 2011-01-19 Canister for deposition apparatus and deposition apparatus using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100062877A KR101287113B1 (ko) 2010-06-30 2010-06-30 증착 장치용 캐니스터 및 이를 이용한 증착 장치

Publications (2)

Publication Number Publication Date
KR20120002140A KR20120002140A (ko) 2012-01-05
KR101287113B1 true KR101287113B1 (ko) 2013-07-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100062877A KR101287113B1 (ko) 2010-06-30 2010-06-30 증착 장치용 캐니스터 및 이를 이용한 증착 장치

Country Status (4)

Country Link
US (1) US20120000986A1 (zh)
KR (1) KR101287113B1 (zh)
CN (1) CN102312218A (zh)
TW (1) TWI490364B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110004081A (ko) * 2009-07-07 2011-01-13 삼성모바일디스플레이주식회사 증착 장치용 캐니스터, 이를 이용한 증착 장치 및 증착 방법
US9101081B2 (en) 2013-01-30 2015-08-04 Hewlett-Packard Development Company, L.P. Data center canopy including turning vanes
CN104962883B (zh) * 2015-07-15 2018-04-06 中国电子科技集团公司第四十六研究所 一种提高二硫化钼薄膜生长均匀性的单独硫源温控工艺
DE112016006167T5 (de) * 2016-01-06 2018-09-27 Health Balance Co., Ltd. Verfahren zur Herstellung einer fermentierten Pulverdispersion aus rotem Ginseng mit maximiertem Aufnahmeverhältnis, die keinen Emulgator enthält
JP6958914B2 (ja) * 2016-07-20 2021-11-02 昭和電工株式会社 ガス供給装置及びガス供給方法
KR20200101141A (ko) * 2019-02-19 2020-08-27 고려대학교 산학협력단 전구체 소스 공급을 위한 금속블록 결합형 히터 어셈블리를 포함하는 증착 장치
KR200494277Y1 (ko) * 2020-10-15 2021-09-08 주식회사 야스 균등 증발원
CN113351143A (zh) * 2021-05-31 2021-09-07 清华大学 反应器

Citations (4)

* Cited by examiner, † Cited by third party
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JP2005023425A (ja) * 2003-07-02 2005-01-27 Samsung Electronics Co Ltd 原子層蒸着用ガス供給装置
KR20070075767A (ko) * 2006-01-16 2007-07-24 주식회사 테라세미콘 화학기상증착장치의 소스파우더 공급장치
KR20080042032A (ko) * 2005-09-09 2008-05-14 가부시키가이샤 린텍쿠 저온에서 액체 원료를 기화시킬 수 있는 액체 원료의기화방법 및 당해 방법을 사용하는 기화기
JP4356874B2 (ja) * 2002-10-30 2009-11-04 エーエスエム インターナショナル エヌ．ヴェー． 容器内における原料物質の気化速度をモニターする方法

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US4517220A (en) * 1983-08-15 1985-05-14 Motorola, Inc. Deposition and diffusion source control means and method
US5174855A (en) * 1989-04-28 1992-12-29 Dainippon Screen Mfg. Co. Ltd. Surface treating apparatus and method using vapor
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JPH11274024A (ja) * 1998-03-18 1999-10-08 Tokyo Electron Ltd 処理液供給装置及び処理液供給方法
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7484315B2 (en) * 2004-11-29 2009-02-03 Tokyo Electron Limited Replaceable precursor tray for use in a multi-tray solid precursor delivery system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4356874B2 (ja) * 2002-10-30 2009-11-04 エーエスエム インターナショナル エヌ．ヴェー． 容器内における原料物質の気化速度をモニターする方法
JP2005023425A (ja) * 2003-07-02 2005-01-27 Samsung Electronics Co Ltd 原子層蒸着用ガス供給装置
KR20080042032A (ko) * 2005-09-09 2008-05-14 가부시키가이샤 린텍쿠 저온에서 액체 원료를 기화시킬 수 있는 액체 원료의기화방법 및 당해 방법을 사용하는 기화기
KR20070075767A (ko) * 2006-01-16 2007-07-24 주식회사 테라세미콘 화학기상증착장치의 소스파우더 공급장치

Also Published As

Publication number Publication date
CN102312218A (zh) 2012-01-11
TW201207147A (en) 2012-02-16
TWI490364B (zh) 2015-07-01
KR20120002140A (ko) 2012-01-05
US20120000986A1 (en) 2012-01-05

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