US20100117131A1 - Transistor for Preventing or Reducing Short Channel Effect and Method for Manufacturing the Same - Google Patents

Transistor for Preventing or Reducing Short Channel Effect and Method for Manufacturing the Same Download PDF

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Publication number
US20100117131A1
US20100117131A1 US12/345,540 US34554008A US2010117131A1 US 20100117131 A1 US20100117131 A1 US 20100117131A1 US 34554008 A US34554008 A US 34554008A US 2010117131 A1 US2010117131 A1 US 2010117131A1
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United States
Prior art keywords
junction region
forming
trench
epitaxial layer
substrate
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Abandoned
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US12/345,540
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English (en)
Inventor
Kyoung Bong Rouh
Young Hwan Joo
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SK Hynix Inc
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Hynix Semiconductor Inc
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Assigned to HYNIX SEMICONDUCTOR INC. reassignment HYNIX SEMICONDUCTOR INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JOO, YOUNG HWAN, ROUH, KYOUNG BONG
Publication of US20100117131A1 publication Critical patent/US20100117131A1/en
Priority to US13/945,585 priority Critical patent/US8703564B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
US12/345,540 2008-11-12 2008-12-29 Transistor for Preventing or Reducing Short Channel Effect and Method for Manufacturing the Same Abandoned US20100117131A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/945,585 US8703564B2 (en) 2008-11-12 2013-07-18 Method for manufacturing a transistor for preventing or reducing short channel effect

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080111990A KR101057189B1 (ko) 2008-11-12 2008-11-12 단채널 효과를 억제하는 트랜지스터 및 그 제조방법
KR10-2008-0111990 2008-11-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/945,585 Division US8703564B2 (en) 2008-11-12 2013-07-18 Method for manufacturing a transistor for preventing or reducing short channel effect

Publications (1)

Publication Number Publication Date
US20100117131A1 true US20100117131A1 (en) 2010-05-13

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US12/345,540 Abandoned US20100117131A1 (en) 2008-11-12 2008-12-29 Transistor for Preventing or Reducing Short Channel Effect and Method for Manufacturing the Same
US13/945,585 Expired - Fee Related US8703564B2 (en) 2008-11-12 2013-07-18 Method for manufacturing a transistor for preventing or reducing short channel effect

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Country Status (3)

Country Link
US (2) US20100117131A1 (ko)
KR (1) KR101057189B1 (ko)
CN (1) CN101740613A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576381A (zh) * 2013-10-14 2015-04-29 中国科学院微电子研究所 一种非对称超薄soimos晶体管结构及其制造方法
US9768175B2 (en) * 2015-06-21 2017-09-19 Micron Technology, Inc. Semiconductor devices comprising gate structure sidewalls having different angles

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508962A (en) * 1966-02-03 1970-04-28 North American Rockwell Epitaxial growth process
US5591652A (en) * 1993-11-08 1997-01-07 Sharp Kabushiki Kaisha Method of manufacturing flash memory with inclined channel region
US5886373A (en) * 1997-01-27 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
US6157058A (en) * 1996-12-06 2000-12-05 Halo Lsi Design Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
US6717200B1 (en) * 1998-09-30 2004-04-06 Siemens Aktiengesellschaft Vertical field effect transistor with internal annular gate and method of production
US20050205897A1 (en) * 2004-03-09 2005-09-22 Riccardo Depetro High voltage insulated-gate transistor
US20060024896A1 (en) * 2003-06-17 2006-02-02 Kuo-Tai Huang Method for fabricating metal-oxide-semiconductor transistor with selective epitaxial growth film
US20060170057A1 (en) * 2005-01-31 2006-08-03 Hynix Semiconductor Inc. Semiconductor device with omega gate and method for fabricating a semiconductor device
US20070004151A1 (en) * 2005-06-29 2007-01-04 Hynix Semiconductor Inc. Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same
US20070032028A1 (en) * 2005-08-03 2007-02-08 International Business Machines Corporation Structure and method for reducing overlap capacitance in field effect transistors
US7226820B2 (en) * 2005-04-07 2007-06-05 Freescale Semiconductor, Inc. Transistor fabrication using double etch/refill process
US20070145474A1 (en) * 2005-11-10 2007-06-28 Stmicroelectronics S.R.L. Vertical-gate mos transistor for high voltage applications with differentiated oxide thickness
US20070152267A1 (en) * 2005-12-29 2007-07-05 Hynix Semiconductor Inc. Recess gate type transistor and method for fabricating the same
US7432167B2 (en) * 2007-01-10 2008-10-07 United Microelectronics Corp. Method of fabricating a strained silicon channel metal oxide semiconductor transistor
US20080251851A1 (en) * 2007-04-12 2008-10-16 Advanced Micro Devices, Inc. Strain enhanced semiconductor devices and methods for their fabrication
US20090020830A1 (en) * 2007-07-16 2009-01-22 Anderson Brent A Asymmetric field effect transistor structure and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3446664B2 (ja) 1999-06-18 2003-09-16 日本電気株式会社 トンネルトランジスタおよびその製造方法

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3508962A (en) * 1966-02-03 1970-04-28 North American Rockwell Epitaxial growth process
US5591652A (en) * 1993-11-08 1997-01-07 Sharp Kabushiki Kaisha Method of manufacturing flash memory with inclined channel region
US6157058A (en) * 1996-12-06 2000-12-05 Halo Lsi Design Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
US5886373A (en) * 1997-01-27 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
US6717200B1 (en) * 1998-09-30 2004-04-06 Siemens Aktiengesellschaft Vertical field effect transistor with internal annular gate and method of production
US20060024896A1 (en) * 2003-06-17 2006-02-02 Kuo-Tai Huang Method for fabricating metal-oxide-semiconductor transistor with selective epitaxial growth film
US20050205897A1 (en) * 2004-03-09 2005-09-22 Riccardo Depetro High voltage insulated-gate transistor
US20060170057A1 (en) * 2005-01-31 2006-08-03 Hynix Semiconductor Inc. Semiconductor device with omega gate and method for fabricating a semiconductor device
US7226820B2 (en) * 2005-04-07 2007-06-05 Freescale Semiconductor, Inc. Transistor fabrication using double etch/refill process
US20070004151A1 (en) * 2005-06-29 2007-01-04 Hynix Semiconductor Inc. Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufacturing the same
US20070032028A1 (en) * 2005-08-03 2007-02-08 International Business Machines Corporation Structure and method for reducing overlap capacitance in field effect transistors
US20070145474A1 (en) * 2005-11-10 2007-06-28 Stmicroelectronics S.R.L. Vertical-gate mos transistor for high voltage applications with differentiated oxide thickness
US20070152267A1 (en) * 2005-12-29 2007-07-05 Hynix Semiconductor Inc. Recess gate type transistor and method for fabricating the same
US7432167B2 (en) * 2007-01-10 2008-10-07 United Microelectronics Corp. Method of fabricating a strained silicon channel metal oxide semiconductor transistor
US20080251851A1 (en) * 2007-04-12 2008-10-16 Advanced Micro Devices, Inc. Strain enhanced semiconductor devices and methods for their fabrication
US20090020830A1 (en) * 2007-07-16 2009-01-22 Anderson Brent A Asymmetric field effect transistor structure and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576381A (zh) * 2013-10-14 2015-04-29 中国科学院微电子研究所 一种非对称超薄soimos晶体管结构及其制造方法
US9768175B2 (en) * 2015-06-21 2017-09-19 Micron Technology, Inc. Semiconductor devices comprising gate structure sidewalls having different angles
US10468416B2 (en) 2015-06-21 2019-11-05 Micron Technology, Inc. Semiconductor device comprising gate structure sidewalls having different angles
US11024629B2 (en) 2015-06-21 2021-06-01 Micron Technology, Inc. Semiconductor device comprising gate structure sidewalls having different angles

Also Published As

Publication number Publication date
KR20100053037A (ko) 2010-05-20
US8703564B2 (en) 2014-04-22
CN101740613A (zh) 2010-06-16
US20130309827A1 (en) 2013-11-21
KR101057189B1 (ko) 2011-08-16

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AS Assignment

Owner name: HYNIX SEMICONDUCTOR INC.,KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ROUH, KYOUNG BONG;JOO, YOUNG HWAN;REEL/FRAME:022042/0205

Effective date: 20081222

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION