US20090032080A1 - Thermoelectric conversion module and method for manufacturing the same - Google Patents

Thermoelectric conversion module and method for manufacturing the same Download PDF

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Publication number
US20090032080A1
US20090032080A1 US12/195,538 US19553808A US2009032080A1 US 20090032080 A1 US20090032080 A1 US 20090032080A1 US 19553808 A US19553808 A US 19553808A US 2009032080 A1 US2009032080 A1 US 2009032080A1
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Prior art keywords
thermoelectric
type
thermoelectric conversion
conversion module
laminate
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US12/195,538
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English (en)
Inventor
Yasuhiro Kawauchi
Takanori Nakamura
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Assigned to MURATA MANUFACTURING CO., LTD. reassignment MURATA MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NAKAMURA, TAKANORI, KAWAUCHI, YASUHIRO
Publication of US20090032080A1 publication Critical patent/US20090032080A1/en
Priority to US13/252,223 priority Critical patent/US8575469B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10219—Thermoelectric component
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets

Definitions

  • the present invention relates to a thermoelectric conversion module and a method for manufacturing the thermoelectric conversion module, and more particularly, to an improvement in a method for manufacturing a compact, high-performance thermoelectric conversion module.
  • thermoelectric conversion module including an insulating frame having a plurality of through-holes spaced from each other.
  • the through-holes contain p-type or n-type compound semiconductor elements.
  • the through-holes containing the p-type compound semiconductor elements and the through-holes containing the n-type compound semiconductor elements are alternately arranged.
  • Electrodes are arranged on the upper and lower surfaces of the frame so as to electrically connect pairs of the p-type and n-type compound semiconductor elements to each other in series.
  • the frame is made of glass or ceramic.
  • thermoelectric conversion module disclosed in Japanese Unexamined Patent Application Publication No. 8-153899
  • the p-type and n-type compound semiconductor elements are each made of one type of compound semiconductor material. That is, one through-hole contains one type of compound semiconductor material. Therefore, the thermoelectric figure of merit of each element peaks at one temperature, that is, the element has a single conversion peak. Thus, the element has relatively low thermoelectric conversion efficiency.
  • Japanese Unexamined Patent Application Publication No. 8-222770 discloses a method for manufacturing a thermoelectric conversion module.
  • the method includes a step of preparing n-type laminates such that tabular n-type thermoelectric semiconductors and tabular insulators are alternately stacked and the stack is cut substantially perpendicularly to the lamination plane, a step of preparing p-type laminates such that tabular p-type thermoelectric semiconductors and tabular insulators are alternately stacked and the stack is cut substantially perpendicularly to the lamination plane, a step of alternately stacking the n-type laminates and the p-type laminates such that the insulators are sandwiched between the n-type and p-type laminates, and a step of forming wiring conductors connecting the n-type thermoelectric semiconductors to the p-type thermoelectric semiconductors adjacent thereto in series.
  • the insulators are made of an epoxy resin.
  • the n-type and p-type laminates are likely to be misaligned with each other in the step of alternately stacking the n-type and p-type laminates. This prevents the thermoelectric semiconductors and the wiring conductors from being properly electrically connected to each other. Therefore, the thermoelectric semiconductors and the wiring conductors may be electrically disconnected from each other or short-circuited.
  • thermoelectric conversion module and a method for manufacturing the thermoelectric conversion module.
  • thermoelectric conversion module includes a p-type thermoelectric semiconductor, an n-type thermoelectric semiconductor, and a laminate including a plurality of insulating layers which are electrically insulative and which are stacked.
  • the laminate includes at least one first accommodation hole accommodating the p-type thermoelectric semiconductor, at least one second accommodation hole accommodating the n-type thermoelectric semiconductor, and a p-n connection conductor that electrically connects the p-type and n-type thermoelectric semiconductors to each other in series such that the p-type and n-type thermoelectric semiconductors define a thermoelectric conversion element pair.
  • the first accommodation hole is defined by a plurality of first perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers and the second accommodation hole is defined by a plurality of second perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers.
  • At least one of the p-type and n-type thermoelectric semiconductors includes a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other and the portions are distributed in the stacking direction of the laminate.
  • Both of the p-type and n-type thermoelectric semiconductors preferably include the portions in which the peak temperatures of thermoelectric figures of merit are different from each other.
  • the laminate preferably includes a plurality of thermoelectric conversion element pairs.
  • the laminate includes a plurality of series wiring conductors arranged to connect the thermoelectric conversion element pairs in series or includes a plurality of parallel wiring conductors arranged to connect the thermoelectric conversion element pairs in parallel.
  • thermoelectric conversion module that includes a p-type thermoelectric semiconductor, an n-type thermoelectric semiconductor, and a laminate including a plurality of insulating layers which are electrically insulative and which are stacked.
  • the laminate has at least one first accommodation hole accommodating the p-type thermoelectric semiconductor, at least one second accommodation hole accommodating the n-type thermoelectric semiconductor, and a p-n connection conductor which electrically connects the p-type and n-type thermoelectric semiconductors to each other in series such that the p-type and n-type thermoelectric semiconductors define a thermoelectric conversion element pair.
  • the first accommodation hole is defined by a plurality of first perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers.
  • the second accommodation hole is defined by a plurality of second perforations which are communicatively connected to each other and which extend through the insulating layers in the thickness direction of the insulating layers.
  • thermoelectric conversion module-manufacturing method includes a step of preparing a plurality of insulating sheets for forming the insulating layers, a step of preparing a p-type thermoelectric semiconductor material for forming the p-type thermoelectric semiconductor and an n-type thermoelectric semiconductor material for forming the n-type thermoelectric semiconductor, a step of forming the first and second perforations in the insulating sheets, a step of packing the p-type thermoelectric semiconductor material and the n-type thermoelectric semiconductor material into the first perforation and the second perforation, respectively, a step of forming the p-n connection conductor on a specific one of the insulating sheets, and a step of stacking the insulating sheets such that the laminate is obtained.
  • thermoelectric conversion module manufactured by the method according to preferred embodiments of the present invention is not limited to the above-described thermoelectric conversion module according to the present invention.
  • the method according to preferred embodiments of the present invention can be used to manufacture a thermoelectric conversion module that does not have the above-mentioned configuration in which at least one of the p-type and n-type thermoelectric semiconductors includes a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other.
  • the method according to preferred embodiments of the present invention is preferably used to manufacture the thermoelectric conversion module according to preferred embodiments of the present invention.
  • the semiconductor-preparing step includes a sub-step of preparing different types of thermoelectric semiconductor components for producing at least one of the p-type and n-type thermoelectric semiconductor materials such that the thermoelectric semiconductor includes a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other
  • the packing step includes a sub-step of packing the different types of thermoelectric semiconductor components into the perforations of the insulating sheets
  • the stacking step includes a sub-step of stacking the insulating sheets having the perforations filled with the different types of thermoelectric semiconductor components such that the insulating sheets are arranged in the laminate in a mixed manner.
  • the method preferably further includes a step of forming the series wiring conductors on a specific one of the insulating sheets.
  • the method preferably further includes a step of forming the parallel wiring conductors on a specific one of the insulating sheets.
  • the insulating sheets are preferably green ceramic sheets.
  • a step of firing the laminate is performed subsequently to the stacking step.
  • At least one of a p-type thermoelectric semiconductor and an n-type thermoelectric semiconductor includes a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other and the portions are distributed in the stacking direction of a laminate.
  • a cascade structure can be achieved and high thermoelectric conversion efficiency can be obtained over a specific temperature range.
  • thermoelectric conversion module When both of the p-type thermoelectric semiconductor and the n-type thermoelectric semiconductor include the portions in which the peak temperatures of thermoelectric figures of merit are different from each other, the thermoelectric conversion module has an improved thermoelectric conversion efficiency.
  • thermoelectric conversion element pairs When the laminate includes thermoelectric conversion element pairs, the thermoelectric conversion element pairs can be electrically connected to each other through wiring conductors included in the laminate.
  • the thermoelectric conversion module can be designed with relatively high flexibility. Therefore, the thermoelectric conversion module can be readily manufactured so as to have various characteristics. In the case in which the thermoelectric conversion module is used as a power generator, high voltage can be obtained by attaching series wiring conductors, for connecting the thermoelectric conversion element pairs to each other in series, to the laminate or a large current can be obtained by attaching parallel wiring conductors, for connecting the thermoelectric conversion element pairs to each other in parallel, to the laminate.
  • thermoelectric conversion module includes steps substantially identical to those of a method for manufacturing a multilayer circuit board.
  • the laminate, which is included in the thermoelectric conversion module, corresponds to the multilayer circuit board, the thermoelectric semiconductors correspond to via-conductors, and a p-n connection conductor and the series and parallel wiring conductors correspond to conductive layers disposed between insulating layers included in a multilayer circuit board.
  • thermoelectric conversion module-manufacturing method enables the thermoelectric semiconductors, which correspond to such via-conductors, to be densely arranged in the laminate. Therefore, the thermoelectric conversion module can be readily manufactured so as to have a small size and high performance.
  • thermoelectric conversion module can be readily manufactured so as to have desired characteristics.
  • thermoelectric conversion module-manufacturing method the thermoelectric semiconductors are formed such that the perforations are formed in the insulating sheets, the thermoelectric semiconductor material is packed into the perforations, and the insulating sheets are then stacked. Therefore, one of the thermoelectric semiconductors is not misaligned with another one thereof. This enables the thermoelectric conversion module to be protected from electrical faults or short circuits.
  • thermoelectric conversion module in which thermoelectric semiconductors include portions in which the peak temperatures of thermoelectric figures of merit are different from each other and the portions are distributed in the stacking direction of a laminate
  • this thermoelectric conversion module can be readily manufactured such that different types of thermoelectric semiconductor materials are prepared and then packed into perforations of other insulating sheets and the insulating sheets having the perforations filled with the different types of thermoelectric semiconductor materials are stacked such that the insulating sheets are arranged in the laminate in a mixed manner.
  • thermoelectric conversion module can be manufactured through steps substantially identical to those of a method for manufacturing a conventional multilayer ceramic circuit board.
  • the commonality of manufacturing facilities allows the thermoelectric conversion module to be manufactured at low cost.
  • FIG. 1 is a plan view of a thermoelectric conversion module according to a first preferred embodiment of the present invention.
  • FIG. 2 is a sectional view taken along the line S 2 -S 2 of FIG. 1 .
  • FIG. 3 is a sectional plan view taken along the line S 3 of FIG. 2 .
  • FIG. 4 is a sectional plan view taken along the line S 4 of FIG. 2 .
  • FIG. 5 is a sectional plan view taken along the line S 5 of FIG. 2 .
  • FIG. 6 is a sectional plan view taken along the line S 6 of FIG. 2 .
  • FIG. 7 is a sectional plan view taken along the line S 7 of FIG. 2 .
  • FIG. 8 is a sectional plan view taken along the line S 8 of FIG. 2 .
  • FIG. 9 is a plan view of a thermoelectric conversion module according to a second preferred embodiment of the present invention.
  • FIG. 10 is a sectional view taken along the line S 11 -S 11 of FIG. 9 .
  • FIG. 11 is a sectional plan view taken along the line S 12 of FIG. 10 .
  • FIG. 12 is a sectional plan view taken along the line S 13 of FIG. 10 .
  • FIG. 13 is a sectional plan view taken along the line S 14 of FIG. 10 .
  • FIG. 14 is a sectional plan view taken along the line of FIG. 10 .
  • FIG. 15 is a sectional plan view taken along the line of FIG. 10 .
  • FIG. 16 is a sectional plan view taken along the line of FIG. 10 .
  • FIG. 17 is a sectional plan view taken along the line S 18 of FIG. 10 .
  • FIG. 18 is a sectional plan view taken along the line S 19 of FIG. 10 .
  • FIG. 19 is a plan view of a thermoelectric conversion module according to a third preferred embodiment of the present invention and corresponds to FIG. 2 or 10 .
  • FIGS. 1 to 8 illustrate a thermoelectric conversion module 1 according to a first preferred embodiment of the present invention.
  • FIG. 1 is a plan view of the thermoelectric conversion module 1 .
  • FIG. 2 is a sectional view taken along the line S 2 -S 2 of FIG. 1 .
  • FIGS. 3 to 8 are sectional plan views taken along the lines S 3 to S 8 , respectively, of FIG. 2 .
  • the thermoelectric conversion module 1 includes a laminate 3 including a plurality of stacked insulating layers 2 which are electrically insulative.
  • the insulating layers 2 are made of an alumina-based material, such as a BaO—Al 2 O 3 —SiO 2 ceramic material or a ZnO—MgO—Al 2 O 3 —SiO 2 glass material, for example.
  • the thermoelectric conversion module 1 further includes a plurality of p-type thermoelectric semiconductors 4 and n-type thermoelectric semiconductors 5 arranged in the laminate 3 .
  • the p-type thermoelectric semiconductors 4 are made of, for example, Chromel.
  • the n-type thermoelectric semiconductors 5 are made of, for example, Constantan.
  • the p-type thermoelectric semiconductors 4 and the n-type thermoelectric semiconductors 5 are alternately arranged in vertical and horizontal directions as shown in FIGS. 2 and 5 to 7 .
  • the laminate 3 has a plurality of first accommodation holes 6 accommodating the p-type thermoelectric semiconductors 4 and a plurality of second accommodation holes 7 accommodating the n-type thermoelectric semiconductors 5 .
  • the first accommodation holes 6 are each defined by a plurality of first perforations 8 extending through some of the insulating layers 2 in the thickness direction thereof.
  • the second accommodation holes 7 are each defined by a plurality of second perforations 9 extending through some of the insulating layers 2 in the thickness direction thereof.
  • the laminate 3 includes p-n connection conductors 11 that electrically connecting pairs of the p-type thermoelectric semiconductors 4 and n-type thermoelectric semiconductors 5 to each other in series such that each p-type thermoelectric semiconductor 4 and n-type thermoelectric semiconductor 5 define a thermoelectric conversion element pair 10 .
  • the p-n connection conductors 11 are arranged on the outer surface of one of the outermost insulating layers 2 of the laminate 3 as shown in FIGS. 2 and 8 .
  • thermoelectric conversion element pairs 10 are connected to each other in series such that a high voltage is obtained.
  • the laminate 3 further includes a plurality of series wiring conductors 12 arranged to sequentially connect the thermoelectric conversion element pairs 10 to each other in series.
  • the series wiring conductors 12 are arranged on the outer surface of the other one of the outermost insulating layers 2 of the laminate 3 as shown in FIGS. 2 and 4 .
  • the thermoelectric conversion module 1 further includes a pair of outer layers 13 and 14 sandwiching the laminate 3 .
  • the outer layers 13 and 14 are in contact with cold and hot junctions of the thermoelectric semiconductors 4 and 5 and are preferably made of a material which is electrically insulative and which has relatively good heat conductivity.
  • the outer layers 13 and 14 are made of, for example, the same material as that for forming the insulating layers 2 .
  • the thermoelectric conversion module 1 further includes extraction conductive layers 15 and 16 , extraction via-conductors 17 and 18 , and terminal electrodes 19 and 20 for extracting electricity from the thermoelectric conversion element pairs 10 , which are connected to each other in series.
  • the extraction conductive layers 15 and 16 as well as the p-n connection conductors 11 , are arranged on the outer surface of one of the outermost insulating layers 2 of the laminate 3 as shown in FIGS. 2 and 8 .
  • the extraction via-conductors 17 and 18 are electrically connected to the extraction conductive layers 15 and 16 , respectively, extend through the laminate 3 and the outer layer 13 , and are electrically connected to the terminal electrodes 19 and 20 , respectively.
  • the terminal electrodes 19 and 20 are arranged on the outer surface of the outer layer 13 .
  • the following members are made of a conductive material including a conductive component, such as Cu, for example: the extraction conductive layers 15 and 16 , the extraction via-conductors 17 and 18 , the terminal electrodes 19 and 20 , the p-n connection conductors 11 , and the series wiring conductors 12 .
  • a conductive component such as Cu
  • the p-type thermoelectric semiconductors 4 and the n-type thermoelectric semiconductors 5 include a plurality of portions in which the peak temperatures of thermoelectric figures of merit are different from each other.
  • peak temperature of thermoelectric figure of merit means the temperature at which the thermoelectric figure of merit has the greatest value.
  • the p-type thermoelectric semiconductors 4 include low-peak temperature portions 21 having a relatively low peak temperature, medium-peak temperature portions 22 having a medium peak temperature, and high-peak temperature portions 23 having a relatively high peak temperature.
  • the n-type thermoelectric semiconductors 5 include low-peak temperature portions 24 having a relatively low peak temperature, medium-peak temperature portions 25 having a medium peak temperature, and high-peak temperature portions 26 having a relatively high peak temperature.
  • the low-peak temperature portions 21 and 24 appear at the cutting plane S 5 of FIG. 2 .
  • the medium-peak temperature portions 22 and 25 appear at the cutting plane S 6 of FIG. 2 .
  • the high-peak temperature portions 23 and 26 appear at the cutting plane S 7 of FIG. 2 .
  • the portions 21 to 23 and 24 to 26 are distributed in the stacking direction of the laminate 3 .
  • the low-peak temperature portions 21 and 24 , the medium-peak temperature portions 22 and 25 , and the high-peak temperature portions 23 and 26 may be varied in the order of arrangement, thickness (size measured in the stacking direction), and/or other features thereof.
  • thermoelectric conversion module 1 Since the thermoelectric semiconductors 4 and 5 have a cascade structure including the portions 21 to 23 and 24 to 26 , in which the peak temperatures of thermoelectric figures of merit are different from each other, the thermoelectric conversion module 1 has outstanding thermoelectric conversion efficiency over a specific temperature range.
  • thermoelectric conversion module 1 A preferable method for manufacturing the thermoelectric conversion module 1 will now be described.
  • a plurality of insulating sheets for forming the insulating layers 2 are prepared.
  • the insulating sheets are preferably green ceramic sheets including a BaO—Al 2 O 3 —SiO 2 ceramic material.
  • the first and second perforations 8 and 9 are formed in the insulating sheets using, for example, a laser.
  • Other insulating sheets, having the same composition as that of those insulating sheets, for forming the outer layers 13 and 14 are prepared.
  • thermoelectric semiconductor materials for forming the p-type thermoelectric semiconductors 4 and n-type thermoelectric semiconductor materials for forming the n-type thermoelectric semiconductors 5 .
  • Each p-type thermoelectric semiconductor material is prepared such that a Chromel powder and an organic vehicle are mixed into a paste.
  • n-type thermoelectric semiconductor material is prepared such that a Constantan powder and an organic vehicle are mixed into a paste.
  • the p-type and n-type thermoelectric semiconductor materials have thermoelectric figures of merit of which the peak temperatures are different from each other.
  • the p-type thermoelectric semiconductor materials are classified into three types: one for the low-peak temperature portions 21 , another one for the medium-peak temperature portions 22 , and the other one for the high-peak temperature portions 23 .
  • the n-type thermoelectric semiconductor materials are classified into three types: one for the low-peak temperature portions 24 , another one for the medium-peak temperature portions 25 , and the other one for the high-peak temperature portions 26 .
  • thermoelectric semiconductor materials and the n-type thermoelectric semiconductor materials are packed into the first perforations 8 and the second perforations 9 , respectively.
  • the p-type thermoelectric semiconductor materials are packed into the first perforations 8 such that the second perforations 9 are masked.
  • the n-type thermoelectric semiconductor materials are then packed into the second perforations 9 such that the first perforations 8 are masked.
  • a screen printing process is preferably used because perforations other than perforations to be filled with thermoelectric semiconductor materials are masked and therefore no masking member or masking step is required.
  • thermoelectric semiconductor materials corresponding to the low-peak, medium-peak, and high-peak temperature portions 21 , 22 , and 23 or the low-peak, medium-peak, and high-peak temperature portions 24 , 25 , and 26 are packed into perforations 8 or 9 , respectively, formed in other insulating sheets.
  • Through-holes for forming the extraction via-conductors 17 and 18 are formed in the insulating sheets.
  • a conductive paste including Cu is packed into the through-holes.
  • the p-n connection conductors 11 and the extraction conductive layers 15 and 16 are formed on a specific one of the insulating sheets.
  • the series wiring conductors 12 are formed on another specific one of the insulating sheets.
  • the p-n connection conductors 11 , the series wiring conductors 12 , and the extraction conductive layers 15 and 16 are formed by a screen printing process using a conductive paste including Cu.
  • Portions of the extraction via-conductors 17 and 18 are formed in one of the insulating sheets and the terminal electrodes 19 and 20 are formed on this insulating sheet.
  • the terminal electrodes 19 and 20 may be formed subsequently to a firing step below.
  • the insulating sheets for forming the insulating layers 2 are stacked, the insulating sheets for forming the outer layers 13 and 14 are deposited on the stack and then pressed, and the compact is cut as required and then fired.
  • the insulating sheets are sintered into the insulating layers 2 and the outer layers 13 and 14 , the p-type and n-type thermoelectric semiconductor materials are sintered into the p-type and n-type thermoelectric semiconductors 4 and 5 , respectively, and the p-n connection conductors 11 , the series wiring conductors 12 , the extraction conductive layers 15 and 16 , and the extraction via-conductors 17 and 18 are sintered, whereby the thermoelectric conversion module 1 is completed.
  • the insulating sheets which have the perforations 8 and 9 filled with the three types of thermoelectric semiconductor materials, are stacked such that the laminate 3 is formed.
  • the laminate 3 has a cascade structure shown in FIG. 2 .
  • thermoelectric conversion module 1 shown in FIGS. 1 to 8 , according to the first preferred embodiment was prepared.
  • the sample included p-type thermoelectric semiconductors 4 made of Chromel, n-type thermoelectric semiconductors 5 made of Constantan, a laminate 3 having accommodation holes 6 and 7 with a diameter of about 200 ⁇ m, for example, and thermoelectric conversion element pairs 10 .
  • the laminate 3 had a thickness of about 300 ⁇ m, for example, before being fired.
  • the thermoelectric semiconductors 4 and 5 were arranged at a pitch of about 400 ⁇ m, for example.
  • the number of the thermoelectric conversion element pairs 10 per one square centimeter was 228.
  • thermoelectric semiconductors 4 and 5 When a temperature difference of about 205 K was established between a pair of outer plates 13 and 14 such that one end of each of the thermoelectric semiconductors 4 and 5 was heated with a heater and the other end thereof was cooled with a fan, an output of about 1.4 W/cm 2 was obtained.
  • FIGS. 9 to 18 are illustrations of a thermoelectric conversion module 31 according to a second preferred embodiment of the present invention.
  • FIG. 9 is a plan view of the thermoelectric conversion module 31 .
  • FIG. 10 is a sectional view taken along the line S 11 -S 11 of FIG. 9 .
  • FIGS. 11 to 18 are sectional plan views taken along the lines S 12 to S 19 , respectively, of FIG. 10 .
  • the same members as those shown in FIGS. 1 to 8 are denoted by the same reference numerals as those shown in FIGS. 1 to 8 and will not be redundantly described.
  • thermoelectric conversion module 31 includes a plurality of thermoelectric conversion element pairs 10 that are connected to each other in parallel. Therefore, a laminate 3 includes parallel wiring conductors 32 to 37 as shown in FIG. 12 to 14 .
  • FIG. 12 shows the parallel wiring conductive layers 32 and 33 , which extend along an insulating layer 2 and function as parallel wiring conductors.
  • FIG. 13 shows the parallel wiring via-conductors 34 and 35 , which extend in the thickness direction of an insulating layer 2 and function as parallel wiring conductors.
  • FIG. 14 shows the parallel wiring conductive layers 36 and 37 , which extend along an insulating layer 2 and function as parallel wiring conductors.
  • thermoelectric conversion element pairs 10 form pairs and are electrically connected to each other in series through p-n connection conductors 11 . These members define the thermoelectric conversion element pairs 10 .
  • thermoelectric conversion element pairs 10 that are arranged in the vertical direction in FIGS. 15 to 17 are connected to each other in parallel through the parallel wiring conductive layers 36 or 37 .
  • One of the parallel wiring conductive layers 36 is connected to one end portion of each of the thermoelectric conversion element pairs 10 and one of the parallel wiring conductive layers 37 is connected to the other end portion thereof.
  • the parallel wiring conductive layers 36 and 37 are alternately arranged.
  • the parallel wiring conductive layers 36 which define a group, are connected to the parallel wiring conductive layer 32 through the parallel wiring via-conductors 34 and the parallel wiring conductive layers 37 , which define another group, are connected to the parallel wiring conductive layer 33 through the parallel wiring via-conductors 35 .
  • extraction via-conductors 38 and 39 extend through an outer layer 13 in the thickness direction thereof.
  • Terminal electrodes 40 and 41 are arranged on the outer surface of the outer layer 13 . Therefore, as is clear from FIGS. 9 , 11 , and 12 , the terminal electrode 40 is connected to the parallel wiring conductive layer 32 through the extraction via-conductor 38 and the terminal electrode 41 is connected to the parallel wiring conductive layer 33 through the extraction via-conductor 39 .
  • thermoelectric conversion module 31 has a configuration in which the thermoelectric conversion element pairs 10 , which are connected to each other in parallel, are arranged between a pair of the terminal electrodes 40 and 41 .
  • thermoelectric conversion module 31 can be manufactured by substantially the same method as that for manufacturing the above-described thermoelectric conversion module 1 except that the following step is performed: a step of forming the parallel wiring conductive layers 32 and 33 , the parallel wiring via-conductors 34 and 35 , and the parallel wiring conductive layers 36 and 37 on specific insulating sheets.
  • FIG. 19 is a sectional view of a thermoelectric conversion module 51 according to a third preferred embodiment of the present invention and corresponds to FIG. 2 or 10 .
  • the same members as those shown in FIG. 2 or 10 are denoted by the same reference numerals as those shown in FIG. 2 or 10 and will not be redundantly described.
  • thermoelectric conversion module 51 has a configuration in which a plurality of structures identical to the thermoelectric conversion module 1 , shown in FIG. 2 , including the thermoelectric conversion element pairs 10 connected to each other in series are connected to each other in parallel.
  • the structures which correspond to the thermoelectric conversion module 1 shown in FIG. 2 , each include extraction via-conductors 17 and 18 (the extraction via-conductors 17 not being shown in FIG. 19 ).
  • the extraction via-conductors 17 and 18 are connected to each other, whereby the structures, which correspond to the thermoelectric conversion module 1 shown in FIG. 2 , are electrically connected to each other in parallel.
  • thermoelectric conversion module 51 shown in FIG. 19 The number of structures, which are included in the thermoelectric conversion module 51 shown in FIG. 19 and correspond to the thermoelectric conversion module 1 shown in FIG. 2 , is two, and may, alternatively, be three or more as required.
  • thermoelectric conversion module according to of the present invention is as described above with reference to the preferred embodiments and various modifications may be made.
  • thermoelectric conversion element pairs When a thermoelectric conversion module includes a plurality of thermoelectric conversion element pairs, the thermoelectric conversion element pairs may be connected to each other by various techniques other than those described with reference to the foregoing figures. The number of the thermoelectric conversion element pairs may be arbitrarily varied.
  • the present invention covers a thermoelectric conversion module including a single thermoelectric conversion element pair.
  • the p-type and n-type thermoelectric semiconductors 4 and 5 each include the three portions in which the peak temperatures of thermoelectric figures of merit are different from each other.
  • the number of such portions in which the peak temperatures of thermoelectric figures of merit are different from each other may be arbitrarily varied. Only the p-type or n-type thermoelectric semiconductors 4 or 5 may include such portions in which the peak temperatures of thermoelectric figures of merit are different from each other.
  • thermoelectric semiconductors 4 and 5 the portions in which the peak temperatures of thermoelectric figures of merit are different from each other are arranged in the p-type and n-type thermoelectric semiconductors 4 and 5 in the same manner.
  • portions of the p-type and n-type thermoelectric semiconductors 4 and 5 in which the peak temperatures of thermoelectric figures of merit are the same are disposed in the perforations 8 and 9 .
  • the p-type or n-type thermoelectric semiconductors may include portions in which the peak temperatures of thermoelectric figures of merit are different from each other and which are disposed in a plurality of perforations.
  • thermoelectric semiconductors and/or insulating sheets may be made of different materials or may have portions made of material having different thermal expansion coefficients.
  • a material for forming the insulating sheets is not limited to ceramic or glass and a resin may be used to form the insulating sheets.

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US10473365B2 (en) * 2008-06-03 2019-11-12 Gentherm Incorporated Thermoelectric heat pump
US20110226304A1 (en) * 2008-11-20 2011-09-22 Murata Manufacturing Co., Ltd. Thermoelectric Conversion Module
US11203249B2 (en) 2009-05-18 2021-12-21 Gentherm Incorporated Temperature control system with thermoelectric device
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US20160276563A1 (en) * 2013-11-13 2016-09-22 Ud Holdings, Llc Thermoelectric generator with minimal thermal shunting
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US10625566B2 (en) 2015-10-14 2020-04-21 Gentherm Incorporated Systems and methods for controlling thermal conditioning of vehicle regions
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CN101385153B (zh) 2012-01-11

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