US20080302513A1 - Method and Device for Tempering a Substrate - Google Patents

Method and Device for Tempering a Substrate Download PDF

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Publication number
US20080302513A1
US20080302513A1 US11/887,506 US88750606A US2008302513A1 US 20080302513 A1 US20080302513 A1 US 20080302513A1 US 88750606 A US88750606 A US 88750606A US 2008302513 A1 US2008302513 A1 US 2008302513A1
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Prior art keywords
area
temperature
partial element
partial
substrate
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English (en)
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Markus Eibl
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ATT Systems GmbH
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ATT Systems GmbH
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Publication of US20080302513A1 publication Critical patent/US20080302513A1/en
Assigned to BAYERISCHE HYPO- UND VEREINSBANK AKTIENGESELLSCHAFT reassignment BAYERISCHE HYPO- UND VEREINSBANK AKTIENGESELLSCHAFT SECURITY AGREEMENT Assignors: ATT ADVANCED TEMPERATURE TEST SYSTEMS GMBH
Assigned to ATT ADVANCED TEMPERATURE TEST SYSTEMS GMBH reassignment ATT ADVANCED TEMPERATURE TEST SYSTEMS GMBH RELEASE OF SECURITY INTEREST Assignors: BAYERISCHE HYPO-UND VEREINSBANK AKTIENGESELLSCHAFT
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0458—Details related to environmental aspects, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

Definitions

  • the invention relates to a device and a method for regulating the temperature of a substrate, and to a method for producing such a device.
  • a substrate holding device in particular for testing circuit arrangements on wafer-type substrates is known from DE 101 22 036 A1.
  • the device described therein has a surface for receiving a substrate to be tested and is formed as an integral ceramic body having layers doped to different extents.
  • the device can be configured with a doped layer region within the ceramic body which serves as heating. It is thus possible to measure the substrate at relatively high temperatures. Cooling of the substrate is not provided in said device.
  • the holding device has to be combined with a conventional thermochuck.
  • a substrate holding device known from U.S. Pat. No. 5,610,529 B also has electrical cooling elements.
  • Such electrical heating and cooling elements always also cause electrical interference signals which can influence electrical measurements on the substrate whose temperature is to be regulated.
  • the construction has a layer system composed of electrically conductive and insulating regions between a substrate support area and the heating and cooling elements.
  • a cooling in a substrate holding device in which such electrical interference effects are avoided is known from U.S. Pat. No. 6,188,563 B1, which discloses a holding device comprising a ceramic body, in which are formed cooling channels through which a cooling fluid can be conducted, said cooling fluid bringing about a cooling of the substrate.
  • a configuration of said cooling channels in the ceramic body which leads to a homogeneous temperature distribution is difficult, however.
  • a homogeneous temperature distribution which can, moreover, also be controlled in a wide temperature range is particularly important, however, for many applications.
  • the present invention provides a device for regulating the temperature of a substrate comprising:
  • the device according to the invention therefore provides an integral device for regulating the temperature of a substrate by means of a temperature-regulating fluid which can be introduced into the cavity of the device or passed out from the cavity via the connection opening.
  • a temperature-regulating fluid which can be introduced into the cavity of the device or passed out from the cavity via the connection opening.
  • the two-part construction of the device enables diverse configurations—adapted to the respective application—of the cavity that is arranged between the two partial elements or is provided at or by the interface.
  • a homogeneous temperature distribution and also a good thermal coupling of the temperature-regulating fluid to the device are made possible as a result.
  • the use of ceramic material increases the thermal stability.
  • the two partial elements essentially comprise ceramic material, that is to say that they comprise at least one ceramic core or an element body on ceramic material (e.g. aluminum oxide or aluminum nitride) which forms the major constituent or the main constituent of the partial elements.
  • the main constituent represents the essentially shaping part of the partial elements.
  • the device in addition to the first connection opening at least one second connection opening is provided via which a fluid outflow and/or inflow from and/or to the at least one cavity is made possible.
  • the cavity preferably forms at least one continuous channel between the first and the second connection opening. This enables a continuous through-flow of the temperature-regulating fluid, wherein one connection opening serves as inflow and the other as outflow for the fluid.
  • the open-loop or closed-loop control of the substrate temperature is thereby facilitated by means of an open-loop or closed-loop control of the temperature and/or a quantity or flow rate of the flowing fluid.
  • the at least one continuous channel runs essentially in meandering fashion, that is to say that it preferably has loops in which it essentially reverses its course locally. This improves the thermal coupling of the temperature-regulating fluid to the device, on the one hand, and the homogeneity of the temperature distribution, on the other hand.
  • the continuous channel is further preferably arranged in such a way that a fluid throughflow from the first connection opening through the channel to the second connection opening takes place essentially on the basis of the countercurrent principle.
  • the channel is thus arranged in such a way that, at least with respect to a first section of the channel, a second section of the channel exists which runs essentially parallel and is adjacent to said first section, wherein the fluid flows in approximately opposite directions in the two channel sections.
  • This has the effect that a temperature gradient that forms in the flow direction of the fluid on account of the energy transfer between fluid and device in the first channel section opposes an approximately opposite temperature gradient on account of the opposite flow direction in the adjacent second channel section.
  • An improved temperature homogeneity is thus achieved at the bearing area for the substrate.
  • it is particularly preferred if two connection openings of the same channel are already adjacent and the channel sections run essentially parallel to one another in meandering fashion from the connection openings through the entire device.
  • ribs are formed in the channel, the longitudinal direction of said ribs running essentially in the direction of the channel. This brings about a large surface area in the channel region and hence a good thermal coupling of the temperature-regulating fluid to the device.
  • each case at least one cutout is provided in both partial elements, which cutouts together form the at least one cavity.
  • the connecting areas lie essentially in a connecting plane, wherein the cutouts are formed in the two partial elements symmetrically with respect to the connecting plane.
  • a symmetrical configuration of the two partial elements is particularly advantageous for the production of ceramic partial elements since an adaptation of the partial elements to one another is largely maintained even after a possible shrinkage of the partial elements during the firing of the ceramic.
  • a symmetrical configuration of the partial elements brings about an essentially identical thermal expansion behavior.
  • the partial elements are connected to one another in fluid-tight fashion at the connecting areas in such a way that a fluid can emerge from the cavity essentially only via the at least one connection opening.
  • a connecting layer is arranged at least at one of the two connecting areas.
  • Said connecting layer facilitates, inter alia, the sealing of the connecting areas and/or the adhesion of the partial elements to one another.
  • the at least one connecting layer is configured at least in part as an electrically conductive layer preferably comprising nickel or copper. Electrical interference signals can be shielded by this electrically conductive layer, which is desirable particularly for electrical measurements on the substrate whose temperature is to be regulated. It is most preferred if, for this purpose, the conductive connecting layer projects beyond the connecting area in order to form an electrical connection contact which is accessible in particular from outside the device.
  • an electrically conductive first shielding layer is arranged at least partly or in regions at the bearing area of the first partial element.
  • Said first shielding layer enables the shielding of electrical interference signals in addition or as an alternative to an electrically conductive connecting layer.
  • it could also be electrically conductively connectable to the substrate in order thus to bring the substrate to a specific electrical potential.
  • said first shielding layer has at least one electrical connection contact.
  • the second partial element additionally has an outer area or mounting area at which an electrically conductive second shielding layer is arranged at least in regions.
  • said outer area or mounting area is an area which is remote from the connecting area and plane-parallel thereto.
  • the second shielding layer could bring about a shielding from electrical interference signals and preferably have an electrical connection contact.
  • the simultaneous configuration of the temperature-regulating device with the electrically conductive connecting layer and the first and second electrically conductive shielding layer is particularly preferred. It is thus advantageously possible to bring about a triax connection of the three layers, wherein the first shielding layer is or can be connected to force potential, the electrically conductive connecting layer is or can be connected to guard potential and the second shielding layer is or can be connected to shield or ground potential. This brings about a particularly good shielding from electrical interference signals and thus permits highly sensitive noise-free electrical measurements on the substrate.
  • an integrated heating element is arranged and/or an external heating element can be fitted at the outer area or mounting area of the second partial element.
  • a cooling fluid with a heating element, a rapid and advantageously precise closed-loop or open-loop control of temperature is possible.
  • the device can be used with conventional thermochucks or hot plates.
  • the first partial element is preferably configured in a cylindrical fashion, wherein the first connecting area and the bearing area form plane-parallel base areas.
  • the present invention provides a method for producing a device for regulating the temperature of a substrate comprising the following steps in this order:
  • the production according to the invention of a device for regulating the temperature of a substrate composed of two partial elements simplifies the configuration of the at least one cutout that forms the cavity after the connection of the partial elements, whereby a particularly individual cavity configuration adapted to the problem can be performed.
  • the use of ceramic material increases the thermal stability or enables higher temperatures and/or leads to a higher strength.
  • step (c) of connecting the two partial elements comprises a step of brazing.
  • step (a) of providing the first and second partial element comprises a step of forming the first and/or second partial element as a first and/or a second green blank composed of ceramic material.
  • a green blank composed of ceramic raw material which preferably comprises a ceramic powder mixture is produced in a form determined by the desired final form of the first and/or second partial element taking account of the dimensional change arising in the subsequent method steps. Consequently, preferably a first and/or a second green blank having a first or a second connecting area is produced.
  • the method additionally comprises a step of firing the first and/or second green blank.
  • a (preferably very much) harder first and/or second partial element arises from the preferably relatively readily deformable green blank.
  • This is preferably done by means of a sintering process which the firing step preferably comprises and in which mechanically stronger ceramic material arises from a low-strength ceramic raw material at high temperatures.
  • step (b) of forming the at least one cutout is effected before the step of firing the corresponding partial element in which the cutout is formed.
  • a mechanical processing of the corresponding partial element can be carried out more easily in the non-fired state, that is to say in the green state, than in the fired, that is to say hardened, state.
  • a post-processing is effected after firing in order to carry out corrections in particular of faults produced by deformation of the partial element during firing.
  • such partial elements shrink by 20% to 30% from the green state to the fired state. This shrinkage can possibly take place non-uniformly.
  • the method additionally comprises a step of forming at least a first electrically conductive shielding layer at the bearing area of the first partial element and/or a second electrically conductive shielding layer at an outer area of the second partial element.
  • forming the first and/or second shielding layer comprises a step of sputtering and/or vapor deposition of electrically conductive material, which preferably comprises metal.
  • the step of forming the first and/or second shielding layer further preferably takes place after a step of firing the corresponding partial element.
  • the at least one shielding layer could be formed before or after step (c) of connecting the two partial elements.
  • the method comprises (preferably before step (c) of connecting the two partial elements) an additional step of depositing an electrically conductive layer on at least one part or region of at least one of the two connecting areas. Particularly preferably, said step takes place after step (b) of forming the at least one cutout.
  • the at least one conductive layer is preferably formed as part of a connecting layer, via which the two partial elements are connected in step (c).
  • the step of depositing said at least one conductive layer preferably comprises a step of sputtering and/or vapor deposition of electrically conductive material, which preferably comprises metal. Said layer preferably forms an essentially closed, continuous layer, which is particularly preferably arranged at the entire at least one connecting area.
  • the present invention provides a method for regulating the temperature of a substrate, comprising the following steps:
  • the fluid is supplied to the at least one cavity via the at least one first connection opening and is discharged from the at least one cavity via the at least one second connection opening.
  • the temperature and/or the flow rate of the supplied fluid is varied for the open-loop or closed-loop control of the temperature of the substrate.
  • the temperature and/or the flow rate of the supplied fluid can preferably be controlled in a manner dependent on a signal of a temperature sensor provided in or at the device and/or at the substrate.
  • a device according to the invention with vacuum grooves formed in the bearing area of said device is provided in the temperature-regulating method and the temperature-regulating method in this case preferably additionally comprises a step of sucking up the substrate by means of the vacuum grooves.
  • a device having an electrically conductive connecting layer at at least one of the two connecting areas, an electrically conductive first shielding layer at the bearing area and an electrically conductive second shielding layer at an outer area of the second partial element is provided in the temperature-regulating method, wherein
  • a heating element is arranged at an outer area of the second partial element, wherein an open-loop or closed-loop control of the temperature of the substrate comprises an open-loop or closed-loop control of the temperature and/or of the heating power of the heating element.
  • the device according to the invention and its preferred embodiments can be produced by the production method according to the invention.
  • the method products of the preferred embodiments of the production method according the invention represent preferred embodiments of the device according to the invention.
  • FIG. 1 shows a cross section of a first preferred embodiment of a device according to the invention for regulating the temperature of a substrate.
  • FIGS. 2A-2C in each case show a plan view of the first connecting area of the first partial element in accordance with further preferred embodiments of the device according to the invention.
  • FIG. 1 shows a cross section of a preferred embodiment of the device according to the invention for regulating the temperature of a substrate, wherein a first partial element 10 and a second partial element 12 are shown, which each comprise a preferably essentially cylindrical first ceramic body 14 and second ceramic body 16 , respectively.
  • a first partial element 10 and a second partial element 12 are shown, which each comprise a preferably essentially cylindrical first ceramic body 14 and second ceramic body 16 , respectively.
  • aluminum oxide or aluminum nitride is suitable as ceramic material therefor.
  • an electrically conductive first shielding layer 18 is provided which forms a bearing area 20 of the first partial element 10 .
  • the substrate S e.g. semiconductor wafer
  • the latter is brought into contact at least in regions with the bearing area 20 .
  • the substrate S is preferably in areal contact with the bearing area 20 .
  • the first shielding layer 18 preferably comprises metal (e.g. gold or nickel) and has a layer thickness in the direction of the normal to the bearing area 20 which lies within a range of approximately 1 ⁇ m to a few 10 ⁇ m.
  • the first shielding layer 18 projects beyond the bearing area 20 and not only covers the planar area of the first ceramic body 14 but additionally has edge regions that at least partly cover the cylindrical lateral area of said ceramic body. Besides an additional electrical shielding effect, said edge regions can also serve as electrical connections. Consequently, the electrically conductive first shielding layer 18 preferably has at least one contact-making region which projects beyond the bearing area 20 and is electrically conductively connected to the first shielding layer 18 arranged at the bearing area 20 .
  • vacuum grooves for sucking up the substrate S are formed in or at the bearing area.
  • the first partial element 10 has a first connecting area 22 , which is essentially remote from the bearing area 20 and is plane-parallel thereto.
  • First cutouts or recesses 24 are provided in the first connecting area 22 of the first partial element 10 .
  • an electrically conductive connecting layer 26 is arranged at the first connecting area 22 .
  • the connecting layer 26 is interrupted in the region of the first cutouts 24 .
  • the interfaces or surfaces of the first cutouts 24 could also be coated with an electrically conductive layer which, together with the connecting layer 26 , forms a closed electrically conductive layer.
  • the electrically conductive connecting layer 26 preferably projects beyond the first connecting area or is formed in such a way as to form an electrical connection contact.
  • the second partial element 12 has an essentially planar second connecting area 28 , via which it is arranged onto the first connecting area 22 of the first partial element 10 and is or can be connected to said partial element (indirectly/directly).
  • the connecting layer 26 preferably comprises copper or nickel and connects the two partial elements to one another by brazing.
  • second cutouts 30 are formed in such a way that, together with the first cutouts 24 in the first partial element 10 , they form cavities 32 .
  • at least one conductive layer could alternatively or additionally be arranged at the interfaces or surfaces of the second cutouts 30 , which, together with the connecting layer 26 , forms a closed electrically conductive layer.
  • One or a plurality of ribs 34 are formed in the cutouts 24 , 30 and project into the cavities 32 in order to enlarge the surface areas of the cutouts 24 , 30 which serve as contact areas for a temperature-regulating fluid. The energy transfer between temperature-regulating fluid and temperature-regulating device is thus improved.
  • the good thermal coupling of the temperature-regulating fluid to the device is particularly advantageous for a rapid and/or precise closed-loop or open-loop control of the temperature.
  • the second cutouts 30 are preferably arranged essentially symmetrically or mirror-symmetrically with respect to the first cutouts 24 .
  • the entire second partial element 12 is formed essentially symmetrically or mirror-symmetrically with respect to the first partial element 10 .
  • the ceramic bodies 14 , 16 are formed essentially symmetrically with respect to one another. This facilitates in particular the adaptation of the two partial elements during the production of the temperature-regulating device.
  • the second partial element 12 has an outer area or mounting area 38 , at which an electrically conductive second shielding layer 38 is or can be arranged.
  • the second shielding layer 38 is preferably configured analogously to the first shielding layer 18 .
  • a heating element 40 is arranged at the outer area 36 .
  • the heating element 40 can either be fixedly connected to the outer area 36 or be arranged onto the outer area 36 in a releasable manner.
  • the closed-loop or open-loop control of the temperature can additionally be supported with the aid of said heating element 40 .
  • the first partial element 10 or lower part has a temperature sensor 42 , which is preferably formed by a thermistor (e.g. PT100).
  • electrical potentials are respectively applied to the electrically conductive shielding layers 18 , 38 illustrated in FIG. 1 and the electrically conductive connecting layer 26 in a triaxial interconnection.
  • they are electrically conductively connected at laterally formed contacts.
  • the first shielding layer 18 is connected to force potential
  • the connecting layer 26 is connected to guard potential
  • the second shielding layer 38 is connected to shield or ground potential.
  • a temperature-regulating fluid that is to say a cooling or heating fluid
  • the temperature of the substrate could also be increased by a heating fluid without the heating element 40 being necessary for this purpose.
  • FIGS. 2 show preferred configurations of the first cutouts 24 in a plan view of the first connecting area 22 of the first partial element 10 .
  • the cavities 32 are formed as a multiplicity of annular channels 44 which are connected to a first connection opening 50 via an essentially radially running inflow channel 46 and to a second connection opening 52 via an essentially radially running outflow channel 48 .
  • a temperature-regulating fluid introduced through the first connection opening 50 can therefore be distributed between the annular channels 44 via the inflow channel 46 and can be conducted out of the device again through the second connection opening 52 via the outflow channel 48 .
  • An essentially continuous flow of the temperature-regulating fluid is thus achieved.
  • the fluid emerging through the second connection opening 52 can be fed back into the device again through the first connection opening 50 after it has been brought to a desired temperature by an external heating or cooling.
  • Said temperature can be controlled for example in a manner dependent on a signal from the temperature sensor 42 .
  • the through-flow cross section of the individual annular channels 44 is individually adapted to its length.
  • a larger through-flow cross section of the outer annular channels can lead to an increase in the flow rate and thus to a matching of the through-flow times of the fluid through the individual annular channels.
  • the average through-flow time in all the channels is essentially identical in magnitude. A higher homogeneity of the temperature distribution can thus be achieved.
  • FIG. 2B shows a further preferred embodiment of the cavities 32 .
  • the latter are formed as a singly continuous, that is to say non-branched, channel which runs essentially in meandering fashion.
  • FIG. 2C likewise shows an essentially meandering course of a singly continuous channel.
  • said channel is designed on the basis of the countercurrent principle, that is to say that, with respect to each first channel section 54 , there is an adjacent second channel section 56 which runs essentially parallel thereto and in which the temperature-regulating fluid flows essentially oppositely to the direction in the first channel section 54 .
  • an oppositely running temperature gradient in the second channel section 56 is adjacent to a temperature gradient in the first channel section 54 which arises as a result of the fluid taking up or emitting energy from or to the temperature-regulating device.
  • the first partial element 10 preferably has a vacuum connection, with the aid of which the substrate S can be sucked up via grooves in the bearing area 20 .
  • Said grooves preferably have flanked areas which form an angle of less than 90° with the bearing area 20 .
  • a closed conductive layer can thus be achieved when the first shielding layer 18 is applied by sputtering. If the grooves had flank areas running perpendicular to the bearing area 20 , or if the flanks even had an overhanging structure, a metal film applied by sputtering from a direction perpendicular to the bearing area 20 could be interrupted at said flanks and regions of the first shielding layer 18 would be formed which were not electrically conductively connected to the rest of the shielding layer.
  • the cutouts 24 , 30 could also have a corresponding flank structure in order to be able to achieve a closed conductive layer also in the region of the cutouts and the connecting areas 22 , 28 .
  • the cutouts could be provided only in one of the two partial elements.
  • the other partial element would then preferably have a continuous or closed planar connecting area.
  • the first shielding layer 18 could form only a part of the bearing area 20 .
  • the size and form of the shielding layer could be adapted in particular to the substrate S whose temperature is to be regulated. In this case, the remaining areas of the bearing area 20 could be formed by the first ceramic body 14 .
  • the second shielding layer 38 could form only a part of the outer area 36 .
  • One of the conductive layers e.g. the conductive layer 38
  • the ceramic bodies 14 , 16 of the two partial elements 10 , 12 are produced as green blanks in an essentially cylindrical form.
  • the ceramic bodies 14 , 16 can still be shaped relatively easily. Therefore, the cutouts 24 , 30 are at least partly formed as early as in this state. In this case, the cutouts could be produced together with the cylindrical form.
  • the green blanks are dried and fired. The ceramic bodies thereby essentially attain their final hardness and thermal stability.
  • the ceramic bodies 14 , 16 shrink typically by about 20% to 30% during drying and hardening. Their form can also change slightly in the process.
  • the ceramic bodies 14 , 16 In the case of a symmetrical configuration of the ceramic bodies 14 , 16 , an essentially symmetrical deformation (e.g. shrinkage) also results, whereby the adaptation of the two ceramic bodies with respect to one another is largely maintained.
  • the ceramic bodies 14 , 16 and in particular the cutouts 24 , 30 thereof are post-processed (preferably mechanically) after firing.
  • the connecting areas 22 , 28 are preferably also planarized.
  • grooves are provided at the bearing area 20 , via which grooves the substrate can be held against the bearing area by means of a vacuum. Said grooves can already be formed in the green blanks. However, it is also possible for the grooves to be produced in the fired state.
  • electrically conductive shielding layers 18 , 38 are then deposited on the ceramic bodies. This is preferably done by sputtering, vapor deposition, in particular by CVD (chemical vapor deposition), electrolytic deposition or application (e.g. by means of a solvent).
  • CVD chemical vapor deposition
  • electrolytic deposition e.g. by means of a solvent
  • the grooves previously formed in the bearing area preferably have a profile which results as cross section of the grooves in a plane perpendicular to their longitudinal direction and which preferably has essentially a “V” or “U” form.
  • the surfaces of the grooves are preferably formed by a combination of planar and/or curved areas.
  • the surfaces of the grooves preferably form an angle of less than 90° with the bearing area.
  • this essentially means an extension of the cross section from the groove base or vertex to the edge thereof via which the grooves adjoin the bearing area.
  • the two partial elements are finally preferably connected to one another by brazing.
  • Copper or silver solder on nickel used for brazing can in this case simultaneously serve as an electrically conductive connecting layer which brings about a shielding from electrical interference signals.
  • a co-fixing method in which the two partial elements are fired together by the use of a glaze layer, or likewise an adhesive bonding of the two partial elements is conceivable.
  • the bearing areas are connected to one another in fluid-tight fashion in such a way that the temperature-regulating fluid can flow in and out only via the connection openings and does not emerge from the channels in other regions.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Resistance Heating (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Ceramic Products (AREA)
  • Sliding-Contact Bearings (AREA)
US11/887,506 2005-03-30 2006-03-30 Method and Device for Tempering a Substrate Abandoned US20080302513A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005014513A DE102005014513B4 (de) 2005-03-30 2005-03-30 Vorrichtung und Verfahren zum Temperieren eines Substrats, sowie Verfahren zur Herstellung der Vorrichtung
DE102005014513.2 2005-03-30
PCT/EP2006/002908 WO2006103073A1 (de) 2005-03-30 2006-03-30 Vorrichtung und verfahren zum temperieren eines substrats

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US (1) US20080302513A1 (ja)
EP (1) EP1866654B1 (ja)
JP (1) JP2008537327A (ja)
CN (1) CN101171522B (ja)
DE (1) DE102005014513B4 (ja)
WO (1) WO2006103073A1 (ja)

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US20100294461A1 (en) * 2009-05-22 2010-11-25 General Electric Company Enclosure for heat transfer devices, methods of manufacture thereof and articles comprising the same
US8698049B2 (en) 2008-09-10 2014-04-15 Applied Materials, Inc. Rapid thermal processing lamphead with improved cooling

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Publication number Priority date Publication date Assignee Title
WO2008071211A1 (de) 2006-12-13 2008-06-19 Att Systems Gmbh Vorrichtung und verfahren zum temperieren eines substrats
KR101411956B1 (ko) * 2012-02-29 2014-07-04 한국생산기술연구원 이종접합 구조체 및 그 제조방법
DE102019005093A1 (de) 2019-07-22 2021-01-28 Att Advanced Temperature Test Systems Gmbh Verfahren zur temperatursteuerung bzw. -regelung eines chucks für einen wafer, eine temperiereinrichtung zum temperieren eines chucks sowie ein wafertestsystem zum testen eines wafers
DE102020007791A1 (de) 2020-12-18 2022-06-23 Att Advanced Temperature Test Systems Gmbh Modulares Wafer-Chuck-System

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WO2006103073A1 (de) 2006-10-05
DE102005014513B4 (de) 2011-05-12
EP1866654B1 (de) 2012-06-20
DE102005014513A1 (de) 2006-10-05
EP1866654A1 (de) 2007-12-19
JP2008537327A (ja) 2008-09-11
CN101171522B (zh) 2012-08-29

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