US20070228550A1 - Optical Semiconductor device - Google Patents

Optical Semiconductor device Download PDF

Info

Publication number
US20070228550A1
US20070228550A1 US11/727,952 US72795207A US2007228550A1 US 20070228550 A1 US20070228550 A1 US 20070228550A1 US 72795207 A US72795207 A US 72795207A US 2007228550 A1 US2007228550 A1 US 2007228550A1
Authority
US
United States
Prior art keywords
region
semiconductor region
optical waveguide
waveguide layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/727,952
Other languages
English (en)
Inventor
Tsutomu Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Sumitomo Electric Device Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Assigned to EUDYNA DEVICES INC. reassignment EUDYNA DEVICES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHIKAWA, TSUTOMU
Publication of US20070228550A1 publication Critical patent/US20070228550A1/en
Priority to US12/571,846 priority Critical patent/US8194710B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Definitions

  • This invention generally relates to an optical semiconductor device.
  • a wavelength-tunable semiconductor laser has a gain for a laser emission and can select a wavelength of the laser.
  • the methods include a method of changing a resonant wavelength of loss or gain by changing a refractive index or angle of a diffractive grating or an etalon provided in a laser cavity.
  • the methods include a method of changing a resonant wavelength of the laser cavity by changing an optical length in the laser cavity (refractive index or a physical length of the laser cavity).
  • the method of changing the refractive index has an advantage in reliability or manufacturing cost, because a mechanical operating portion is not necessary being different from the method of changing the angle or length.
  • the refractive index changing method includes changing a temperature of an optical waveguide, changing a carrier density in the optical waveguide by providing a current, and so on.
  • a semiconductor laser having a Sampled Grating Distributed Reflector (SG-DR) is supposed as a wavelength tunable laser that changes a temperature of an optical waveguide, where the SG-DR has a wavelength selection function.
  • this semiconductor laser if a reflection spectrum of a plurality of SG-DR regions (reflection region) is controlled preferably, a predetermined wavelength can be selected with a vernier effect. That is, this semiconductor laser emits a laser light at a wavelength where reflection peaks of two SG-DR regions are overlapped with each other. It is therefore possible to control the lasing wavelength by controlling each of the reflection peaks of the SG-DR regions.
  • a heater is provided on a surface of the SG-DR region.
  • the temperature of the optical waveguide of the SG-DR region is changed when the heater generates heat.
  • the refractive index of the SG-DR region changes. It is therefore possible to control the reflection peak wavelength of the SG-DR region by controlling the heating value of the heater.
  • the heater needs an electrical power when generating heat.
  • Japanese Patent Application Publication No. 9-92934 discloses a method of controlling a refractive index of a reflection region by providing an electrical power to a heater.
  • a wavelength controllable range of the reflection peak is proportional to an amount of refractive index change of the optical waveguide, that is, an amount of temperature change of the optical waveguide. It is necessary to enlarge the electrical power to be provided to the heater in order to enlarge the wavelength controllable range.
  • the semiconductor laser is controlled with low electrical power, due to an optical system's requirement. It is therefore difficult for the heater to generate sufficient heat which enlarges the wavelength controllable range of the semiconductor laser.
  • the present invention provides an optical semiconductor device in which heat generated by a heater is provided to an optical waveguide effectively.
  • an optical semiconductor device including a semiconductor substrate, a semiconductor region and a heater.
  • the semiconductor region has a stripe shape demarcated with a top face and a side face thereof.
  • the stripe shape has a width smaller than a width of the semiconductor substrate.
  • An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region.
  • the heater is provided above the optical waveguide layer.
  • thermal resistance in the semiconductor region is large because the width of the semiconductor region is smaller than that of the semiconductor substrate.
  • the heater can heat the optical waveguide layer effectively.
  • the distance between the optical waveguide layer and the semiconductor substrate is sufficiently large because the distance from the lower end of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. It is therefore possible to limit the diffusion of the heat having conducted through the optical waveguide layer. And the temperature gradient in the optical waveguide layer is sufficiently large. Accordingly, it is possible to control the temperature of the optical waveguide layer effectively with the heat generated by the heater.
  • FIG. 1 illustrates a cross sectional view of a distributed reflector in accordance with a first embodiment of the present invention
  • FIG. 2 illustrates a conduction direction of heat from a heater
  • FIG. 3 illustrates a cross sectional view of a distributed reflector in accordance with a second embodiment of the present invention
  • FIG. 4 illustrates a cross sectional view of a distributed reflector in accordance with a third embodiment of the present invention
  • FIG. 5 illustrates a perspective view of a laser chip in accordance with a fourth embodiment of the present invention
  • FIG. 6A illustrates a top view of a laser chip in accordance with a fourth embodiment of the present invention
  • FIG. 6B illustrates a cross sectional view taken along a line A-A of FIG. 6A in accordance with a fourth embodiment of the present invention
  • FIG. 7 illustrates an overall structure of a laser module in accordance with a fifth embodiment
  • FIG. 8 illustrates an overall structure of a laser module in accordance with a sixth embodiment
  • FIG. 9 illustrates a cross sectional view of a distributed reflector in accordance with a comparative example
  • FIG. 10 illustrates a temperature profile of a distributed reflector
  • FIG. 11 illustrates a temperature gradient of distributed reflector in accordance with a first example
  • FIG. 12 illustrates a temperature gradient of distributed reflector in accordance with a second example
  • FIG. 13 illustrates a temperature gradient of distributed reflector in accordance with a third example.
  • FIG. 1 illustrates a cross sectional view of a distributed reflector 100 in accordance with the first embodiment.
  • the distributed reflector 100 has a structure in which a mesa semiconductor region 102 is provided on a center area of a semiconductor substrate 101 , where the mesa semiconductor region 102 has a stripe mesa shape and a width smaller than that of the semiconductor substrate 101 . That is, the mesa semiconductor region 102 is projecting from the center area of the semiconductor substrate 101 .
  • An insulating layer 103 is formed on a top face and a side face of the mesa semiconductor region 102 and on an exposed top face of the semiconductor substrate 101 .
  • the insulating layer 103 acts as a passivation film.
  • the semiconductor substrate 101 is, for example, composed of InP.
  • the insulating layer 103 is, for example, composed of an insulator such as SiO 2 , SiN, and the insulator has a thermal conductivity lower than that of the mesa semiconductor region 102 .
  • a heater 104 is provided on the insulating layer 103 above the mesa semiconductor region 102 .
  • the mesa semiconductor region 102 has a structure in which an optical waveguide layer 106 is formed at a center area of a cladding region 105 .
  • the cladding region 105 is, for example, composed of InP.
  • the cladding region 105 confines a light traveling in the optical waveguide layer 106 .
  • the optical waveguide layer 106 is, for example, composed of a material having an absorption edge wavelength at shorter wavelengths side compared to a lasing wavelength.
  • the optical waveguide layer 106 is, for example, composed of InGaAsP crystal.
  • the heater 104 is composed of such as NiCr and changes the temperature of the optical waveguide layer 106 according to an electrical power provided thereto. And a refractive index of the optical waveguide layer 106 changes.
  • FIG. 2 illustrates a conduction direction of the heat from the heater 104 .
  • the heat generated by the heater 104 is mainly conducted to the mesa semiconductor region 102 and the semiconductor substrate 101 , because a thermal conductivity of air is lower than that of the mesa semiconductor region 102 .
  • the mesa semiconductor region 102 and the semiconductor substrate 101 are divided into a region A, a region B, a region C and a region D according to the thermal conduction.
  • the region A is an upper region of the mesa semiconductor region 102 .
  • the region B is a lower region of the mesa semiconductor region 102 except for the region A.
  • the region C is an upper region of the semiconductor substrate 101 .
  • the region D is a lower region of the semiconductor substrate 101 except for the region C.
  • the heat generated by the heater 104 is conducted downward from the upper end of the region A in a path having a width of the mesa semiconductor region 102 .
  • Rth is a thermal resistance.
  • Rth is proportional to a length of a path where heat flows and is inversely proportional to a cross sectional area of the path.
  • the temperature differential dT is proportional to the thermal resistance Rth when heat flux from a heater (or electrical power provided to the heater) is substantially constant.
  • a temperature differential per unit length, a temperature gradient is enlarged as the cross sectional area of the path is reduced.
  • the thermal resistance or the temperature gradient of the region A is large, because the width of the mesa semiconductor region 102 is lower than that of the semiconductor substrate 101 .
  • the heat conducted to the lower end of the region A is conducted downward in the region B.
  • the region B is a lower region of the mesa semiconductor region 102 and is closer to the semiconductor substrate 101 .
  • the heat is conducted radially toward the semiconductor substrate 101 because of influence of the semiconductor substrate 101 . Accordingly, the temperature gradient gets lower in the region B as closer to the semiconductor substrate 101 .
  • the heat conducted to the lower end of the region B is conducted downward in the region C.
  • the heat is conducted downward so as to spread in the width direction of the semiconductor substrate 101 .
  • the temperature gradient is therefore reduced drastically in the region C.
  • the heat conducted to the lower end of the region C is conducted downward in the region D.
  • the temperature gradient is converged to a given small value, because the heat is sufficiently spread in the width direction of the semiconductor substrate 101 .
  • the heat generated by the heater 104 is provided to the optical waveguide layer 106 effectively, because the width of the mesa semiconductor region 102 is lower than that of the semiconductor substrate 101 .
  • a distance D 2 between the optical waveguide layer 106 and the lower end of the mesa semiconductor region 102 is more than half of a width W of the mesa semiconductor region 102 .
  • the width W is a width of a part of the mesa semiconductor region 102 where the optical waveguide layer 106 is provided.
  • the width of the semiconductor substrate 101 is, for example, 300 ⁇ m.
  • the width W is, for example, 10 ⁇ m.
  • a distance D 1 from the upper end of the mesa semiconductor region 102 to the optical waveguide layer 106 is, for example, 3 ⁇ m.
  • the distance D 2 is, for example, 7 ⁇ m.
  • the distance D 2 in other mesa semiconductor region not intended for thermal efficiency is generally smaller than 2 ⁇ m, and the other mesa semiconductor region is different from that of the present invention.
  • the lower end of the semiconductor region corresponds to the bottom of the semiconductor region 102 having a stripe shape. Therefore, the lower end of the semiconductor region is positioned at an interface between the semiconductor substrate 101 and the semiconductor region 102 . If the bottom of the semiconductor region 102 is positioned at a position higher than the interface, the bottom of the semiconductor region 102 is positioned at a position higher than the interface. And if the bottom of the semiconductor region 102 is positioned at a position lower than the interface, the bottom of the semiconductor region 102 is positioned at a position lower than the interface.
  • the mesa semiconductor region includes a part of the semiconductor substrate 101 .
  • the distance between the optical waveguide layer 106 and the semiconductor substrate 101 is sufficiently large. It is therefore possible to limit the diffusion of the heat having conducted through the optical waveguide layer 106 . And the temperature gradient in the optical waveguide layer 106 is sufficiently large. It is therefore possible to control the temperature of the optical waveguide layer 106 effectively with the heat generated by the heater 104 .
  • FIG. 3 illustrates a cross sectional view of the distributed reflector 100 a .
  • the distributed reflector 100 a has a surrounding semiconductor region 107 , being different from the distributed reflector 100 shown in FIG. 1 .
  • the surrounding semiconductor region 107 is arranged at a given interval from the side face of the mesa semiconductor region 102 . That is, the distributed reflector 100 a has a structure in which a groove is formed between the mesa semiconductor region 102 and the surrounding semiconductor region 107 .
  • the surrounding semiconductor region 107 is, for example, composed of InP.
  • the insulating layer 103 is formed on the top face and the side face of the mesa semiconductor region 102 and on the top face and the side face of the surrounding semiconductor region 107 .
  • the heat generated by the heater 104 is mainly conducted to the mesa semiconductor region 102 and the semiconductor substrate 101 , because there is a space between the mesa semiconductor region 102 and the surrounding semiconductor region 107 . It is therefore possible to control the temperature of the optical waveguide layer 106 effectively with the heat of the heater 104 .
  • FIG. 4 illustrates a cross sectional view of the distributed reflector 100 b .
  • an insulating resin 108 fills the groove between the mesa semiconductor region 102 and the surrounding semiconductor region 107 , being different from the distributed reflector 100 a shown in FIG. 3 .
  • the insulating resin 108 has a thermal conductivity lower than that of the mesa semiconductor region 102 .
  • the insulating resin 108 is, for example, composed of polyimide.
  • the heat generated by the heater 104 is mainly conducted to the mesa semiconductor region 102 and the semiconductor substrate 101 , because the insulating resin 108 is arranged between the mesa semiconductor region 102 and the surrounding semiconductor region 107 and the thermal conductivity of the insulating resin 108 is lower than that of the mesa semiconductor region 102 . It is therefore possible to control the temperature of the optical waveguide layer 106 effectively with the heat generated by the heater 104 .
  • the mesa semiconductor region 102 corresponds to the semiconductor region.
  • a part of the cladding region 105 upper than the optical waveguide layer 106 corresponds to the upper cladding layer.
  • a part of the cladding region 105 lower than the optical waveguide layer 106 corresponds to the lower cladding layer.
  • the insulating resin 108 corresponds to the insulator.
  • FIG. 5 illustrates a perspective view of the laser chip 200 .
  • FIG. 6A illustrates a top view of the laser chip 200 .
  • FIG. 6B I+llustrates a cross sectional view taken along a line A-A of FIG. 6A .
  • a description will be given of the laser chip 200 with reference to FIG. 5 , FIG. 6A and FIG. 6B .
  • the laser chip 200 has a structure in which a Sampled Grating Distributed Reflector (SG-DR) chip structure ⁇ , a Sampled Grating Distributed Feedback (SG-DFB) chip structure ⁇ and a Power Control (PC) chip structure ⁇ are coupled in order.
  • SG-DR Sampled Grating Distributed Reflector
  • SG-DFB Sampled Grating Distributed Feedback
  • PC Power Control
  • the SG-DR chip structure a has a structure in which an optical waveguide layer 3 , a cladding layer 5 and an insulating layer 6 are laminated on a semiconductor substrate 1 in order and a thin film resistor 9 , a power electrode 10 and a ground electrode 11 are laminated on the insulating layer 6 .
  • the SG-DFB chip structure ⁇ has a structure in which an optical waveguide layer 4 , the cladding layer 5 , a contact layer 7 and an electrode 8 are laminated on the semiconductor substrate 1 in order.
  • the PC chip structure ⁇ has a structure in which an optical waveguide layer 12 , the cladding layer 5 , a contact layer 13 and an electrode 14 are laminated on the semiconductor substrate 1 in order.
  • the semiconductor substrate 1 and the cladding layer 5 of the SG-DR chip structure ⁇ , the SG-DFB chip structure ⁇ and the PC chip structure ⁇ are a single layer formed as a unit respectively.
  • the optical waveguide layers 3 , 4 and 12 are formed on a same plane and are optically coupled.
  • a low reflecting coating 15 is formed on end facet of the semiconductor substrate 1 , the optical waveguide layer 3 and the cladding layer 5 at the SG-DR chip structure a side.
  • a low reflecting coating 16 is formed on end facet of the semiconductor substrate 1 , the optical waveguide layer 12 and the cladding layer 5 at the PC chip structure ⁇ side.
  • Diffractive gratings 2 are formed at a given interval in the optical waveguide layers 3 and 4 . The sampled grating is thus formed.
  • the insulating layer 6 is further formed between the electrode 8 and the electrode 14 .
  • the semiconductor substrate 1 is, for example, composed of InP.
  • the optical waveguide layer 3 is, for example, composed of InGaAsP crystal having an absorption edge wavelength at shorter wavelengths side compared to the lasing wavelength.
  • PL wavelength of the optical waveguide layer 3 is approximately 1.3 ⁇ m.
  • the optical waveguide layer 4 is, for example, an active layer composed of InGaAsP crystal for amplifying a light of a desirable wavelength of a laser emission.
  • the PL wavelength of the optical waveguide layer 4 is approximately 1.57 ⁇ m.
  • the optical waveguide layer 12 is, for example, composed of InGaAsP crystal for changing the output of the emitted light by absorbing or amplifying a light.
  • the PL wavelength of the optical waveguide layer 12 is approximately 1.57 ⁇ m.
  • SG-DR segments are formed in the optical waveguide layer 3 .
  • Three SG-DR segments are formed in the optical waveguide layer 3 in the embodiment.
  • the SG-DR segment is a region in which one region having the diffractive grating 2 and one space region not having the diffractive grating 2 are combined in the optical waveguide layer 3 .
  • the cladding layer 5 is composed of InP and confines a laser light traveling in the optical waveguide layers 3 , 4 and 12 .
  • the contact layers 7 and 13 are composed of InGaAsP crystal.
  • the insulating layer 6 is a passivation film composed of an insulator such as SiN, SiO 2 .
  • the low reflecting coatings 15 and 16 are, for example, composed of a dielectric film including MgF 2 and TiON. The reflectivity of the low reflecting coatings 15 and 16 are, for example, less than 0.3%.
  • the thin film resistor 9 is composed of such as NiCr.
  • the thin film resistor 9 is formed on the insulating layer 6 and extends across above the three SG-DR segments.
  • the power electrode 10 and the ground electrode 11 are coupled to the thin film resistor 9 .
  • the power electrode 10 , the ground electrode 11 , the electrode 8 and the electrode 14 are composed of a conductive material such as Au.
  • a mesa groove 21 is formed from both sides of the thin film resistor 9 to both sides of the optical waveguide layer 3 .
  • the mesa groove 21 is formed to be parallel to the optical waveguide layer 3 .
  • a mesa semiconductor region 20 is demarcated with the mesa groove 21 .
  • the mesa groove 21 is formed from both sides of the thin film resistor 9 to the semiconductor substrate 1 passing through both sides of the optical waveguide layer 3 .
  • the mesa groove 21 is formed to be parallel to the optical waveguide layer 3 .
  • a mesa semiconductor region 20 corresponds to the optical semiconductor region 102 of the first embodiment.
  • the mesa semiconductor region 20 is demarcated with the mesa groove 21 and has the optical waveguide layer 3 .
  • the mesa semiconductor region 20 having the optical waveguide layer 3 corresponds to the mesa semiconductor region 102 of the first embodiment through the third embodiment.
  • the distance from the lower end of the optical waveguide layer 3 to the lower end of the mesa semiconductor region 20 is more than half of the width of the mesa semiconductor region 20 .
  • a current is provided to the electrode 8 .
  • a light is generated in the optical waveguide layer 4 .
  • the light propagates in the optical waveguide layers 3 and 4 , and is reflected and amplified repeatedly. Then it causes lasing oscillation.
  • a part of the laser light is amplified or absorbed in the optical waveguide layer 12 and is emitted through the low reflecting coating 16 . It is possible to control the gain or the absorptance of the optical waveguide layer 12 with the current provided to the electrode 14 .
  • the output of the emitted light is kept constant when a predetermined current is provided to the electrode 14 .
  • the temperature of each SG-DR segment is controlled according to the electrical power. Therefore the refractive index of the SG-DR segment changes. And a reflection peak wavelength of the optical waveguide layer 3 changes. It is possible to control the lasing wavelength of the laser chip 200 by controlling the electrical power to be provided to the thin film resistor 9 .
  • the SG-DFB chip structure ⁇ corresponds to the gain region.
  • the mesa semiconductor region 20 corresponds to the semiconductor region.
  • FIG. 7 illustrates an overall structure of the laser module 300 .
  • the laser module 300 has a structure in which a mount carrier is provided on a temperature control device 301 , and a laser chip 302 and a thermistor are provided on the mount carrier.
  • the laser chip 302 is the same as the laser chip 200 in accordance with the fourth embodiment.
  • the temperature control device 301 controls the temperature of the laser chip 302 .
  • the temperature control device 301 can control the reflection peak wavelength of the optical waveguide layer 4 . Therefore, the laser module 300 can control the lasing wavelength with temperature control of the optical waveguide layer 3 by the thin film resistor 9 and with temperature control of the optical waveguide layer 4 by the temperature control device 301 .
  • FIG. 8 illustrates an overall structure of the laser module 300 a .
  • the laser module 300 a differs from the laser module 300 shown in FIG. 7 in a position where the laser chip 302 is arranged on the temperature control device 301 .
  • the PC chip structure ⁇ and the SG-DFB chip structure ⁇ are arranged on the temperature control device 301 .
  • the SG-DR chip structure ⁇ is not arranged on the temperature control device 301 .
  • the temperature control device 301 controls the temperature of the SG-DFB chip structure ⁇ . And the temperature control device 301 can control the reflection peak wavelength of the optical waveguide layer 4 . Accordingly, the laser module 300 a in accordance with the embodiment can control the lasing wavelength with the temperature control of the optical waveguide layer 3 by the thin film resistor 9 and with the temperature control of the optical waveguide layer 4 by the temperature control device 301 . Therefore, the SG-DR chip structure ⁇ may not be arranged on the temperature control device 301 .
  • the distributed reflectors in accordance with the embodiments mentioned above were modelized. And thermal analysis is performed with a mathematical calculation.
  • the distributed reflector 100 in accordance with the first embodiment was manufactured.
  • the semiconductor substrate 101 and the cladding region 105 were composed of InP.
  • the optical waveguide layer 106 was composed of InGaAsP crystal.
  • the width W of the mesa semiconductor region 102 was 10 ⁇ m.
  • the distance D 1 from the upper end of the mesa semiconductor region 102 to the lower end of the optical waveguide layer 106 was 3 ⁇ m.
  • the distance D 2 from the lower end of the optical waveguide layer 106 to the semiconductor substrate 101 was 17 ⁇ m.
  • the height of the mesa semiconductor region 102 (D 1 +D 2 ) was 20 ⁇ m.
  • the whole height of the semiconductor substrate 101 and the mesa semiconductor region 102 was 100 ⁇ m.
  • the width of the semiconductor substrate 101 was 300 ⁇ m.
  • the height of the semiconductor substrate 101 was 80 ⁇ m.
  • the distributed reflector 100 was manufactured similarly to the first example.
  • the width W of the mesa semiconductor region 102 was 20 ⁇ m.
  • Other structure was the same as the first example.
  • the distributed reflector 100 was manufactured similarly to the first example.
  • the width W of the mesa semiconductor region 102 was 40 ⁇ m
  • the height of the semiconductor substrate 101 was 70 ⁇ m.
  • Other structure was the same as the first example.
  • FIG. 9 illustrates a cross sectional view of the distributed reflector 400 .
  • the distributed reflector 400 has a structure in which a semiconductor region 401 having the width as same as that of the semiconductor substrate 101 was provided on the semiconductor substrate 101 . That is, the distributed reflector 400 has a structure in which the width of the mesa semiconductor region 102 of the distributed reflector 100 is enlarged to that of the semiconductor substrate 101 .
  • the distance D 1 was 3 ⁇ m
  • the distance D 2 was 17 ⁇ m
  • the height of the distributed reflector 400 except for the heater 104 was 100 ⁇ m
  • the width of the semiconductor substrate 101 and the semiconductor region 401 was 300 ⁇ m.
  • FIG. 10 illustrates the temperature profile of the distributed reflector in accordance with the first example and the comparative example.
  • the horizontal axis of FIG. 10 indicates a distance z from the bottom of the heater 104 of each distributed reflector. The distance z is ⁇ 100 ⁇ m at the bottom of each distributed reflector (the bottom of the substrate).
  • the vertical axis of FIG. 10 indicates the temperature differential dT from the temperature of the bottom of each distributed reflector.
  • the temperature differential dT is 0 at the bottom of each distributed reflector.
  • a solid line in FIG. 10 indicates the temperature differential dT of the distributed reflector in accordance with the first example, and a dotted line in FIG. 10 indicates the temperature differential dT of the distributed reflector in accordance with the comparative example.
  • the temperature was increased as closer to the upper face in each distributed reflector.
  • the temperature of the distributed reflector 100 in accordance with the first example was increased little by little as closer to the top face thereof and was increased drastically above the position where the distance z is ⁇ 20 ⁇ m, compared to the distributed reflector in accordance with the comparative example. This is because the width of the mesa semiconductor region 102 is smaller than that of the semiconductor substrate 101 and the thermal resistance of the mesa semiconductor region 102 is large. It is thought that the heat intends to diffuse in the horizontal direction in the distributed reflector in accordance with the comparative example because the mesa structure is not provided.
  • FIG. 11 illustrates the temperature gradient dT/dz in each distributed reflector.
  • the horizontal axis of FIG. 11 indicates the distance z.
  • the vertical axis of FIG. 11 indicates the temperature gradient dT/dz.
  • a dotted line in FIG. 11 indicates the temperature gradient dT/dz of the distributed reflector in accordance with the comparative example.
  • a solid line in FIG. 11 indicates the temperature gradient dT/dz of the distributed reflector in accordance with the first example.
  • the temperature gradient dT/dz was increased from the bottom to the upper face in each distributed reflector.
  • the temperature gradient dT/dz of the distributed reflector 100 in accordance with the comparative example was decreased drastically as the distance from the bottom of the heater 104 was increased.
  • the temperature gradient dT/dz kept a maximum value in a range from the bottom of the heater 104 to a given distance from the bottom of the heater 104 .
  • the temperature gradient dT/dz began to decrease from a position where the distance z is ⁇ 15 ⁇ m, which is a position where the distance from lower end of the mesa semiconductor region is 5 ⁇ m. It is therefore necessary that the distance D 2 is more than 5 ⁇ m in order to obtain the effect of the present invention.
  • FIG. 12 illustrates the temperature gradient dT/dz in the distributed reflector 100 in accordance with the second example.
  • the horizontal axis in FIG. 12 indicates the distance z from the bottom of the heater 104 of the distributed reflector 100 in accordance with the second example.
  • the vertical axis of FIG. 12 indicates the temperature gradient dT/dz.
  • the temperature gradient dT/dz began to decrease from a position where the distance z is ⁇ 10 ⁇ m, which is a position where the distance from the lower end of the mesa semiconductor region is 10 ⁇ m. It is therefore necessary that the distance D 2 is more than 10 ⁇ m in order to obtain the effect of the present invention.
  • FIG. 13 illustrates the temperature gradient dT/dz in the distributed reflector 100 in accordance with the third example.
  • the horizontal axis in FIG. 13 indicates the distance z from the bottom of the heater 104 of the distributed reflector 100 in accordance with the third example.
  • the vertical axis of FIG. 13 indicates the temperature gradient dT/dz.
  • the temperature gradient dT/dz began to decrease from a position where the distance z is ⁇ 10 ⁇ m, which is a position where the distance from the lower end of the mesa semiconductor region is 20 ⁇ m. It is therefore necessary that the distance D 2 is more than 20 ⁇ m in order to obtain the effect of the present invention.
  • the temperature gradient dT/dz in the mesa semiconductor region 102 is inversely proportional to the width W of the mesa semiconductor region 102 .
  • the effect of the present invention is reduced as the width W gets higher. It is therefore necessary that the distance D 2 is enlarged as the width W is enlarged. It is necessary that the distance D 2 is more than 5 ⁇ m when the width W is 10 ⁇ m, the distance D 2 is more than 10 ⁇ m when the width W is 20 ⁇ m, and the distance D 2 is more than 20 ⁇ m when the width W is 40 ⁇ m in the distributed reflector 100 in accordance with the examples. It is therefore necessary that the distance D 2 is more than half of the width W in order to obtain the effect of the invention.
  • optical semiconductor device in accordance with the present invention may not be limited to the distributed reflector or the laser chip having the SG-DR chip structure and the SG-DFB chip structure.
  • the optical semiconductor device or the laser chip in accordance with the present invention may be other optical semiconductor device having a heater controlling a temperature of an optical waveguide.
  • the present invention is based on Japanese Patent Application No. 2006-095317 filed on Mar. 30, 2006 and Japanese Patent Application No. 2007-075651 filed on Mar. 22, 2007, the entire disclosure of which is hereby incorporated by reference.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
US11/727,952 2006-03-30 2007-03-29 Optical Semiconductor device Abandoned US20070228550A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/571,846 US8194710B2 (en) 2006-03-30 2009-10-01 Semiconductor laser with heater

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006-095317 2006-03-30
JP2006095317 2006-03-30
JP2007075651A JP2007294914A (ja) 2006-03-30 2007-03-22 光半導体装置
JP2007-075651 2007-03-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/571,846 Division US8194710B2 (en) 2006-03-30 2009-10-01 Semiconductor laser with heater

Publications (1)

Publication Number Publication Date
US20070228550A1 true US20070228550A1 (en) 2007-10-04

Family

ID=38230786

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/727,952 Abandoned US20070228550A1 (en) 2006-03-30 2007-03-29 Optical Semiconductor device
US12/571,846 Active 2027-11-18 US8194710B2 (en) 2006-03-30 2009-10-01 Semiconductor laser with heater

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12/571,846 Active 2027-11-18 US8194710B2 (en) 2006-03-30 2009-10-01 Semiconductor laser with heater

Country Status (3)

Country Link
US (2) US20070228550A1 (fr)
EP (1) EP1841024B1 (fr)
JP (1) JP2007294914A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273644A (ja) 2006-03-30 2007-10-18 Eudyna Devices Inc 光半導体装置、レーザチップおよびレーザモジュール
JP5790336B2 (ja) 2011-09-01 2015-10-07 住友電気工業株式会社 半導体光集積素子
JP6241919B2 (ja) * 2013-09-30 2017-12-06 住友電工デバイス・イノベーション株式会社 光学半導体デバイス
CN107230930A (zh) * 2016-03-23 2017-10-03 华为技术有限公司 一种可调激光器及制备方法
JP7051505B2 (ja) * 2018-03-14 2022-04-11 古河電気工業株式会社 光導波路構造及びその製造方法
JP7012409B2 (ja) * 2018-03-14 2022-01-28 古河電気工業株式会社 光導波路構造及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
US20040257579A1 (en) * 2003-06-18 2004-12-23 Hitachi, Ltd. Chemical sensor
US20050111778A1 (en) * 2003-11-25 2005-05-26 Nec Corporation Multi-channel Mach-Zehnder interferometer type optical circuits for restraining heat interference of adjacent channel

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03283689A (ja) * 1990-03-30 1991-12-13 Oki Electric Ind Co Ltd 半導体レーザの製造方法
JP3152424B2 (ja) * 1990-07-13 2001-04-03 株式会社日立製作所 波長可変半導体レーザ
JPH0697602A (ja) * 1992-09-14 1994-04-08 Anritsu Corp 分布ブラッグ反射型レーザ
JP3064118B2 (ja) * 1992-09-16 2000-07-12 アンリツ株式会社 分布反射型半導体レーザ
JP3293968B2 (ja) * 1993-08-24 2002-06-17 株式会社東芝 半導体レーザ装置
JP3192293B2 (ja) * 1993-09-16 2001-07-23 株式会社東芝 光伝送装置
JPH06268320A (ja) * 1993-03-12 1994-09-22 Toshiba Corp 半導体レーザ装置
JP2914248B2 (ja) * 1995-09-23 1999-06-28 日本電気株式会社 波長可変半導体レーザ素子
JP2000206476A (ja) * 1999-01-18 2000-07-28 Kyocera Corp 温度制御型光導波路
JP4074724B2 (ja) * 1999-04-07 2008-04-09 日本オプネクスト株式会社 波長可変光源及びそれを用いた光学装置
JP3950604B2 (ja) * 1999-12-28 2007-08-01 日本オプネクスト株式会社 半導体レーザ装置、半導体レーザアレー装置及び光伝送装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
US20040257579A1 (en) * 2003-06-18 2004-12-23 Hitachi, Ltd. Chemical sensor
US20050111778A1 (en) * 2003-11-25 2005-05-26 Nec Corporation Multi-channel Mach-Zehnder interferometer type optical circuits for restraining heat interference of adjacent channel

Also Published As

Publication number Publication date
US8194710B2 (en) 2012-06-05
EP1841024A1 (fr) 2007-10-03
US20100040101A1 (en) 2010-02-18
EP1841024B1 (fr) 2014-09-10
JP2007294914A (ja) 2007-11-08

Similar Documents

Publication Publication Date Title
US8101957B2 (en) Optical semiconductor device, laser chip and laser module
JP4231854B2 (ja) 半導体レーザ素子及びガス検知装置
JP6093660B2 (ja) チューナブル・ブラッグ・グレーティング、およびそれを用いたチューナブル・レーザ・ダイオード
US8194710B2 (en) Semiconductor laser with heater
JP4629022B2 (ja) レーザ装置、レーザモジュール、および、半導体レーザ
US9356425B2 (en) Semiconductor DBR laser
US7515779B2 (en) Optical semiconductor device
US8638825B2 (en) Wavelength tunable laser diode
US20150010264A1 (en) Optical semiconductor device
US7362782B2 (en) Optical semiconductor device and controlling method of the same
US7656927B2 (en) Optical semiconductor element and optical semiconductor device
JP2011507263A (ja) 波長可変半導体レーザー装置
JP4891316B2 (ja) 半導体発光素子および波長可変レーザ光源
JP5303581B2 (ja) 光半導体装置
JP5303580B2 (ja) 光半導体装置、レーザチップおよびレーザモジュール

Legal Events

Date Code Title Description
AS Assignment

Owner name: EUDYNA DEVICES INC., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ISHIKAWA, TSUTOMU;REEL/FRAME:019158/0884

Effective date: 20070313

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION