US20070068921A1 - Heater Module for Semiconductor Manufacturing Equipment - Google Patents
Heater Module for Semiconductor Manufacturing Equipment Download PDFInfo
- Publication number
- US20070068921A1 US20070068921A1 US11/559,389 US55938906A US2007068921A1 US 20070068921 A1 US20070068921 A1 US 20070068921A1 US 55938906 A US55938906 A US 55938906A US 2007068921 A1 US2007068921 A1 US 2007068921A1
- Authority
- US
- United States
- Prior art keywords
- heater
- semiconductor manufacturing
- manufacturing equipment
- set forth
- block part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Definitions
- the present invention relates to heater modules, utilized in semiconductor manufacturing tools that process semiconductor wafers, for semiconductor manufacturing equipment capable of heat-treating and cooling wafers, and to semiconductor manufacturing equipment in which such heater modules are installed.
- the block part when the heater part and the block part are in abutment, the block part is preferably fixed to the heater part by vacuum-chucking it thereto.
- at least one of either of the abutment surfaces along which the heater part and the block part abut on each other preferably is a specular surface.
- the block part may be affixed to the chamber bottom part in the semiconductor manufacturing equipment, or else may be shifted into abutment on the chamber bottom part.
- the chamber bottom part preferably is water-cooled.
- the heater part preferably is a ceramic in which a heating element is formed.
- the ceramic is preferably at least one selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- the block part is preferably at least one selected from the group consisting of aluminum, magnesium, copper, iron, stainless steel, aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- the foregoing heater module of the present invention for semiconductor manufacturing equipment is preferably utilized in CVD equipment, etcher equipment, coater/developer equipment, or a low-k dielectric baking device.
- FIG. 1 is a schematic sectional view illustrating one specific example of a heater module in a first aspect of the present invention
- FIG. 2 is a schematic sectional view illustrating one specific example of a heater module in a second aspect of the present invention.
- FIG. 3 is a schematic sectional view illustrating a separate specific example of a heater module in the second aspect of the present invention.
- wafers must be heated uniformly, and owing to the consequent demand that the wafer-carrying surface of the heater be highly isothermal, exploiting the thickness of the heater to spread the heat generated by heating element uniformly in all directions is desirable. Still, thinning the thickness of a heater in order to heighten its cooling speed gives rise to problems in that its effectiveness in spreading heat uniformly is reduced, and the isothermal properties in the wafer-carrying surface of the heater are harmed.
- the present invention provides a heater part for controlled heating of a wafer placed on its outer face and, shiftable relative to the heater part, a block part that may be abutted on as well as separated from the reverse side of the heater part.
- a heater module configured in this way by the heater part and block part, the total heat capacity of the heater part and the block part may be changed by the block part being in abutment against, and with it being separated from, the reverse side of the heater part, and exploiting this varying of the total heat capacity enables bettering and enhancing both the isothermal properties, and at the same time the cooling speed, of the heater.
- having the heat capacity of the block part be 20% or more of the total heat capacity of the heater part and the block part makes even more heat be transmitted from the heater to the block part being in abutment on the heater, or else enables even more heat to be diffused to the surroundings from the heater being parted off the block part, on account of which cooling speeds that are all the higher may be looked forward to.
- the larger the heat capacity of the block part the more the cooling speed of the heater part may be boosted.
- inasmusch as enlarging the heat capacity of the block part means that the chamber—and the equipment as a whole—must be enlarged as well, the heat capacity of the block part must be planned taking into consideration the goal of cooling speed enhancement and the economics of the equipment overall.
- FIG. 1 One specific example of a first aspect of the present invention in a heater module is depicted in FIG. 1 .
- the heater module is furnished with heater part 1 a in the interior of which a heating element 2 is formed, and block part 3 a provided at the reverse side of heater part 1 a to be shiftable up and down along guide shafts 4 , wherein during heating heater part 1 a and block part 3 a are in abutment, as indicated in FIG. 1A .
- heater part 1 a and block part 3 a are united to form a large-heat-capacity heater; and when it is to be cooled, block part 3 a is, as depicted in FIG. 1B , parted away from heater part 1 a, descending toward the bottom part 5 of the equipment chamber. Accordingly, heat radiation is promoted, and the cooling speed of heater part 1 a is hastened, by the fact that heater part 1 a is left on its own with a smaller heat capacity.
- heater part 1 b and block part 3 b as shown in FIG. 2A are separated during heating, and during cooling block part 3 b is, as indicated in FIG. 2B , elevated to abut on the reverse side of heater part 1 b, which is stationary.
- the abutting of block part 3 b lets the cooling speed of heater part 1 b be sped, because the heat in heater part 1 b is transmitted to block part 3 b, which has individuated heat capacity.
- block part 3 c is stationary and heater part 1 c shifts up and down along the guide shafts 4 , apart from which the heater module is the same as that of FIG. 2 .
- heater part 1 c and block part 3 c are as shown in FIG. 3A separated, and during cooling, by bringing down heater part 1 c to abut on block part 3 c on the bottom part 5 of the chamber, as indicated in FIG. 3B , the heat in heater part 1 c is transmitted to block part 3 c.
- Factors influencing the transmission of heat from the heater part to the block part include contact resistance in the surfaces along which the heater part and block part abut. If the contact resistance is large, the isothermal properties and cooling speed of the heater part are liable to be affected because it takes time for heat to pass from the heater part. In light of this fact, forming through-holes in the top face of the block part or in the reverse face of the heater part and vacuum-chucking the two together under suction with a vacuum pump lets the abutment surfaces of the heater part and the block part adhere closely, dramatically lowering the contact resistance, which therefore is advantageous in improving the cooling speed of the heater part especially in the heater module in the second aspect.
- the block part separated from the heater part during heating is liable to be heated by radiant heat from the heater part.
- processing either or both of the matching abutment surfaces of the heater part and the block part into a specular surface makes reflecting back radiant heat from the heater part possible.
- the clearance between the heater part and the block part when heating is underway can be made smaller, which makes scaling-down the chamber as well as the equipment possible.
- the heater part in the present invention may be either a metal such as aluminum or a ceramic, but is preferably a ceramic in which a heating element is formed.
- the ceramic constituting the heater part is at least one selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- metal or ceramic whose thermal conductivity is high may be utilized for the block part; preferable are, for example, Al, Mg, Cu, Fe, stainless steel, aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- the block part is either identical or similar to the heater part in form, and in that its diameter is within ⁇ 25% of the diameter of the heater part.
- the heat capacity of the block part preferably is 20% or more of the total heat capacity of the heater part and the block part.
- the cooling speed of conventional heaters has generally been at the 1° C./min level, because it has been dependent solely on radiant heat from a heater having a certain heat capacity.
- the cooling speed of the heater part although it depends on the heat capacity of the block part, is enhanced to at least several times the conventional level.
- cooling speeds of 10° C./min or more can be achieved if the heat capacity of the block part is designed to be 20% or more of the total heat capacity of the heater part and the block part, enabling productivity to be dramatically improved. What is more, such improvement in cooling speed means that in terms of wafers, enhancement in the adhesive strength of thin films, enhancement in mechanical hardness, and enhancement in etching characteristics can be anticipated.
- a heater module of the present invention as described above in CVD equipment employed in deposition of metal films as well as dielectric films, in etcher equipment employed in etching metal films as well as dielectric films, in coater/developer equipment employed in thermosetting of photoresists in photolithography, and in low-k dielectric baking devices employed in heating/baking of low-k films is especially efficacious owing to the effect of enhanced heater cooling speed.
- semiconductor manufacturing equipment in which a heater module of the present invention is utilized is a means that can serve to heighten productivity and reduce costs, and by which improvement in both characteristics and performance of wafers and other processed articles is recognizable.
- Block parts made from each of the metal and ceramic materials set forth in the following table and having the same diameter as the foregoing heater parts, were also fabricated. In doing so, the percent heat capacity of the block part with respect to the total heat capacity of the heater and block parts was varied as indicated in the table below by varying the block part thickness. In addition, in all samples, the top face of the block part (the face where it abuts with the heater part) was surfaced by lapping.
- Heater modules in the first aspect according to the present invention were assembled using these heater parts and block parts. That is, they were lent a structure in which during heating the heater part and the block part abut, and in which during cooling the block part is lowered to separate it from the heater part. It should be understood that elevation of the block part and its abutment onto/fixing against the heater part was by means of oil pressure or air pressure, and furthermore that with Sample 6 only, the heater part and the block part were held fast by vacuum-chucking. It should also be understood that the distance between the heater part and the block part separated during cooling was fixed at 200 mm with all of the samples.
- Isothermal ratings for each of the sample heater modules having been heated were found by applying a 200-V voltage to the heater part in abutment with the block part and heating to 200° C., maintaining that temperature for 10 minutes, and then measuring the temperature at 9 points within the top face (wafer-carrying surface) of the heater module. After that the block part was lowered to separate it from the heater part, and the speed with which the isolated heater part, left to radiate heat, cooled down to 150° C. was measured. In doing so, isothermal ratings when cooled (15° C.) were found from the temperatures at the 9 points within the top face likewise as just noted. These results were tabulated and set forth in the following table.
- An AlN heater part the same as that of the foregoing Embodiment 1 was prepared, and an air-cool cooling block, made of aluminum, having a 60 liter/min capacity was installed on the heater part, fixed on the reverse face thereof. It will be appreciated that a block part was not used in the comparative example.
- This heater that has been in use to date was heated to 200° C., which temperature was maintained for 10 minutes, and then was cooled down to 150° C. by means of the air-cool cooling block.
- isothermal rating when heated and when cooled was found in the same way as in Embodiment 1.
- the results were a heater cooling speed of 1° C./min, and an isothermal rating of ⁇ 1.5% when heated and ⁇ 1.7% when cooled, which was considerably inferior to that of the samples of the present invention in the foregoing Embodiment 1.
- a heater module was assembled utilizing the same heater part and block part as with Sample 4 in the foregoing Embodiment 1, but the top face of the Al-made block part—i.e., the face where it abuts with the AlN-made heater part—was finished to a specular surface by a polishing process.
- the heater module represented in FIG. 2 in the second aspect of the present invention, was assembled utilizing the same heater part and block part as with Sample 4 in the foregoing Embodiment 1, but the block part was installed to be shiftable up and down by means of oil pressure. That is, the heater module was lent a structure in which during heating the heater part and the block part are separated and the block part is brought into contact with, and rested on, the bottom part of the chamber, and during cooling, the block part is lifted to abut on the heater part. It should be understood that the remaining aspects of the heater module were exactly the same as with Sample 4 in Embodiment 1.
- the isothermal rating of the heater part having been heated was found by heating it in isolation to 200° C., maintaining that temperature for 10 minutes, and thereafter measuring its temperature at 9 points within the top face. Subsequently, the block part was lifted to abut it on the heater part, the heater part was allowed to cool down to 150° C., and the cooling speed was measured and the isothermal rating when cooled (150° C.) was found.
- the heater module represented in FIG. 3 in the second aspect of the present invention, was assembled utilizing the same heater part and block part as with Sample 4 in the foregoing Embodiment 1, but the heater part was installed to be shiftable up and down by means of oil pressure. That is, the heater module was lent a structure in which during heating the heater part and the block part are separated and the block part is brought into contact with, and rested on, the bottom part of the chamber, and during cooling, the heater part is lowered to abut on the block part. It should be understood that the remaining aspects of the heater module were exactly the same as with Sample 4 in Embodiment 1.
- the isothermal rating of the heater part having been heated was found by heating it in isolation to 200° C., maintaining that temperature for 10 minutes, and thereafter measuring its temperature at 9 points within the top face. Subsequently, the heater part was lowered to abut it on the block part, the heater part was allowed to cool down to 150° C., and the cooling speed was measured and the isothermal rating when cooled (150° C.) was found.
- Heater modules identical with those of the foregoing Embodiment 4 and comparative example were installed into place within a low-k film baking device, and an actual-practice implementation was made in which a low-k film coated onto a 12-inch Si wafer was cured.
- the low-k film adhesive strength improved 20% by comparison with the case with the baking device utilizing the heater module of the comparative example.
- the time for the heater to cool was curtailed to 1/25 by comparison with the comparative example.
- a heater module may be rendered in which the cooling speed of the heater post-heating may be heightened several times or more, preferentially 10 times or more, than conventional, and that can contribute toward bettering and improving productivity. What is more, utilizing the heater module lets semiconductor manufacturing equipment be scaled down, and makes appreciable cost reduction possible.
Abstract
Heater module, and semiconductor manufacturing equipment in which the heater module is utilized, for raising the cooling speed of a post-heating heater markedly more than conventional, and that can contribute toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment. The heater module is furnished with heater part 1 a for controlled heating of a wafer placed on its top face, and block part 3 a provided to be shiftable relative to said heater part, for varying heat capacity in total with heater part 1 a by abutting on or separating from the reverse surface of heater part 1 a. By having the heat capacity of block part 3 a be 20% or more of the total heat capacity of heater part 1 a and block part 3 a, the heater cooling speed can be made 10°C./min or more.
Description
- 1. Technical Field
- The present invention relates to heater modules, utilized in semiconductor manufacturing tools that process semiconductor wafers, for semiconductor manufacturing equipment capable of heat-treating and cooling wafers, and to semiconductor manufacturing equipment in which such heater modules are installed.
- 2. Background Art
- In the course of semiconductor fabrication, processes in which after being treated by heating wafers are cooled include: thermosetting of photoresists in photolithography with coater/developers; heating/baking of low-dielectric-constant, i.e. low-k, insulating films; CVD film deposition in forming metal interconnects and dielectric layers; and processes in etchers.
- Heat-treatment of the wafers in these processes has conventionally been carried out using heaters made of aluminum or ceramic. In particular, wafers are placed onto the outer face of heaters in which a heating element is formed, utilized to control heating while the wafers undergo processes such as thermosetting of photoresists and heating/baking of low-k films, or CVD film deposition and etching.
- Recently, in order to enhance productivity in these processes, it has become necessary to raise cooling speed for the post-heating heaters. By the same token, designing for rapid cooling of the processed articles to improve their characteristics has become widespread, and in particular, accompanying the enlarging of wafer diametric span demands for enhanced cooling speed have been growing.
- Forcible liquid cooling and air cooling have been adopted in order to rapidly cool the heater in semiconductor manufacturing equipment applications to date. In specific terms, a cooling block is installed on the heater, usually on the reverse side, and by circulating through the block a liquid or air as a heat-transferring medium for cooling, heat is carried away from the heater, heightening the cooling speed.
- Nevertheless, with these forcible liquid cooling and air cooling systems, the fact that large-scale devices are necessary for circulating the heat-transferring medium and for radiating heat has proved to be a cost-increasing factor in semiconductor manufacturing. Likewise, with it not being possible to enlarge the capacity for the heat-transferring medium within the limited space of the heater, significant improvement in heater cooling speed has been difficult.
- An object of the present invention, in view of such circumstances to date, is to render a heater module, and semiconductor manufacturing equipment in which the heater module is utilized, that makes it possible to raise markedly the cooling speed of a post-heating heater, and that contributes toward bettering and improving productivity, without accompanying scaling-up of and cost increases in the semiconductor manufacturing equipment.
- In order to achieve the foregoing objective, for semiconductor manufacturing equipment a heater module that the present invention renders is characterized in being provided with a heater part for controlled heating of a wafer placed on its outer face, and a block part furnished to be shiftable relative to the heater part, for varying heat capacity in total with the heater part by abutting on and separating from the reverse side of the heater part. In particular, the heat capacity of the block part is 20% or more of the total heat capacity of the heater part and the block part.
- An advantage of the foregoing heater module of the present invention for semiconductor manufacturing equipment is in a first aspect that during heating the heater part and the block part are brought into abutment, and during cooling, by the block part being relatively shift-separated from the heater part, the cooling speed of the heater part is quickened. Another advantage is in a second aspect that during heating the heater part and the block part are separated, and during cooling, by the block part and the heater part being shifted relatively into abutment to conduct heat into the block part, the cooling speed of the heater part is quickened.
- With the foregoing heater module of the present invention for semiconductor manufacturing equipment, when the heater part and the block part are in abutment, the block part is preferably fixed to the heater part by vacuum-chucking it thereto. In addition, at least one of either of the abutment surfaces along which the heater part and the block part abut on each other preferably is a specular surface.
- Furthermore, with the foregoing heater module of the present invention for semiconductor manufacturing equipment, the block part may be affixed to the chamber bottom part in the semiconductor manufacturing equipment, or else may be shifted into abutment on the chamber bottom part. In that case, the chamber bottom part preferably is water-cooled.
- In the foregoing heater module of the present invention for semiconductor manufacturing equipment, the heater part preferably is a ceramic in which a heating element is formed. The ceramic is preferably at least one selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- In addition, in the foregoing heater module of the present invention for semiconductor manufacturing equipment, the block part is preferably at least one selected from the group consisting of aluminum, magnesium, copper, iron, stainless steel, aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- The foregoing heater module of the present invention for semiconductor manufacturing equipment is preferably utilized in CVD equipment, etcher equipment, coater/developer equipment, or a low-k dielectric baking device.
- Furthermore, the present invention renders semiconductor manufacturing equipment characterized in that installed therein is an above-described heater module of the present invention for semiconductor manufacturing equipment.
-
FIG. 1 is a schematic sectional view illustrating one specific example of a heater module in a first aspect of the present invention; -
FIG. 2 is a schematic sectional view illustrating one specific example of a heater module in a second aspect of the present invention; and -
FIG. 3 is a schematic sectional view illustrating a separate specific example of a heater module in the second aspect of the present invention. - When a heater that has been heated is being cooled, its heat capacity is what affects the cooling speed. The larger the heat capacity of the heater is, the slower the cooling speed will be; conversely, the smaller the heat capacity is, the faster the cooling speed will be. Conceivable as a means of lessening the heat capacity of the heater with the objective of raising the cooling speed would be thinning the heater thickness.
- Meanwhile, wafers must be heated uniformly, and owing to the consequent demand that the wafer-carrying surface of the heater be highly isothermal, exploiting the thickness of the heater to spread the heat generated by heating element uniformly in all directions is desirable. Still, thinning the thickness of a heater in order to heighten its cooling speed gives rise to problems in that its effectiveness in spreading heat uniformly is reduced, and the isothermal properties in the wafer-carrying surface of the heater are harmed.
- To address this situation, the present invention provides a heater part for controlled heating of a wafer placed on its outer face and, shiftable relative to the heater part, a block part that may be abutted on as well as separated from the reverse side of the heater part. With a heater module configured in this way by the heater part and block part, the total heat capacity of the heater part and the block part may be changed by the block part being in abutment against, and with it being separated from, the reverse side of the heater part, and exploiting this varying of the total heat capacity enables bettering and enhancing both the isothermal properties, and at the same time the cooling speed, of the heater.
- In particular, having the heat capacity of the block part be 20% or more of the total heat capacity of the heater part and the block part makes even more heat be transmitted from the heater to the block part being in abutment on the heater, or else enables even more heat to be diffused to the surroundings from the heater being parted off the block part, on account of which cooling speeds that are all the higher may be looked forward to. It will be appreciated that the larger the heat capacity of the block part, the more the cooling speed of the heater part may be boosted. Nevertheless, inasmusch as enlarging the heat capacity of the block part means that the chamber—and the equipment as a whole—must be enlarged as well, the heat capacity of the block part must be planned taking into consideration the goal of cooling speed enhancement and the economics of the equipment overall.
- One specific example of a first aspect of the present invention in a heater module is depicted in
FIG. 1 . The heater module is furnished withheater part 1 a in the interior of which aheating element 2 is formed, and blockpart 3 a provided at the reverse side ofheater part 1 a to be shiftable up and down alongguide shafts 4, wherein duringheating heater part 1 a andblock part 3 a are in abutment, as indicated inFIG. 1A . - When the heater module is to heat, heater
part 1 a andblock part 3 a are united to form a large-heat-capacity heater; and when it is to be cooled,block part 3 a is, as depicted inFIG. 1B , parted away fromheater part 1 a, descending toward thebottom part 5 of the equipment chamber. Accordingly, heat radiation is promoted, and the cooling speed ofheater part 1 a is hastened, by the fact thatheater part 1 a is left on its own with a smaller heat capacity. - Likewise, in the specific instance illustrated in
FIG. 2 for example, as the heater module in a second aspect,heater part 1 b andblock part 3 b as shown inFIG. 2A are separated during heating, and duringcooling block part 3 b is, as indicated inFIG. 2B , elevated to abut on the reverse side ofheater part 1 b, which is stationary. The abutting ofblock part 3 b lets the cooling speed ofheater part 1 b be sped, because the heat inheater part 1 b is transmitted to blockpart 3 b, which has individuated heat capacity. - In a heater module depicted in
FIG. 3 , further in the second aspect of the present invention,block part 3 c is stationary andheater part 1 c shifts up and down along theguide shafts 4, apart from which the heater module is the same as that ofFIG. 2 . In particular, during heating,heater part 1 c andblock part 3 c are as shown inFIG. 3A separated, and during cooling, by bringing downheater part 1 c to abut onblock part 3 c on thebottom part 5 of the chamber, as indicated inFIG. 3B , the heat inheater part 1 c is transmitted to blockpart 3 c. - Factors influencing the transmission of heat from the heater part to the block part include contact resistance in the surfaces along which the heater part and block part abut. If the contact resistance is large, the isothermal properties and cooling speed of the heater part are liable to be affected because it takes time for heat to pass from the heater part. In light of this fact, forming through-holes in the top face of the block part or in the reverse face of the heater part and vacuum-chucking the two together under suction with a vacuum pump lets the abutment surfaces of the heater part and the block part adhere closely, dramatically lowering the contact resistance, which therefore is advantageous in improving the cooling speed of the heater part especially in the heater module in the second aspect.
- Furthermore, with the heater module in the second aspect in particular, the block part separated from the heater part during heating is liable to be heated by radiant heat from the heater part. Given this situation, processing either or both of the matching abutment surfaces of the heater part and the block part into a specular surface makes reflecting back radiant heat from the heater part possible. As a result, the clearance between the heater part and the block part when heating is underway can be made smaller, which makes scaling-down the chamber as well as the equipment possible.
- What is more, if the heat that is transmitted to the block part is retained as such, improvement in the cooling speed of the heater part could not be expected because the heat that is transmitted from the heater part when cooling is next underway would be kept from being adequately absorbed. For that reason, it is preferable that after the block part undergoes transmission of heat in contact with the heater part it is parted from the heater part and brought into contact with the bottom part of the chamber to send its heat into the chamber bottom part, whereby the block part cools quickly, readying it for the next cooling. In that case, time to make ready for the next cooling may be shortened by water-cooling the chamber bottom part.
- Here, it is preferable to employ oil pressure or air pressure in abutting as well as separating the heater part and block part, because doing so lets the heater part as well as the block part be shifted smoothly.
- The heater part in the present invention may be either a metal such as aluminum or a ceramic, but is preferably a ceramic in which a heating element is formed. Preferable as the ceramic constituting the heater part is at least one selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- Because both thermal and mechanical shock is exerted on the boundary surface of the heater part in abutting with the block part, the chances are high that cracking and like troubles will arise in the heater part with it being ceramic. Owing to this likelihood, such shock can be mitigated by covering with metal a surface of the heater part made from ceramic—at least the face that abuts with the block part—to prevent cracking or the like in the heater part.
- Meanwhile, metal or ceramic whose thermal conductivity is high may be utilized for the block part; preferable are, for example, Al, Mg, Cu, Fe, stainless steel, aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
- It is also preferable that the block part is either identical or similar to the heater part in form, and in that its diameter is within ±25% of the diameter of the heater part. And it will be appreciated that as stated above, the heat capacity of the block part preferably is 20% or more of the total heat capacity of the heater part and the block part.
- The cooling speed of conventional heaters has generally been at the 1° C./min level, because it has been dependent solely on radiant heat from a heater having a certain heat capacity. In contrast, in a heater module as defined by the present invention the cooling speed of the heater part, although it depends on the heat capacity of the block part, is enhanced to at least several times the conventional level. Specifically, cooling speeds of 10° C./min or more can be achieved if the heat capacity of the block part is designed to be 20% or more of the total heat capacity of the heater part and the block part, enabling productivity to be dramatically improved. What is more, such improvement in cooling speed means that in terms of wafers, enhancement in the adhesive strength of thin films, enhancement in mechanical hardness, and enhancement in etching characteristics can be anticipated.
- Another consideration is that in situations where a heater is cooled by heat radiation, with cooling speed being influenced by surface area, the temperature in the vicinity of the heater lateral side has a greater tendency to drop because the surface area there is generally large compared with the middle portion, and during cooling the isothermal quality is consequently liable to deteriorate. With a heater module as given by the present invention, however, the heater part cools at a speed quite significantly faster than the speed of cooling through the lateral side, and especially with the heater module in the second aspect, because heat passes to the block part by means of thermal conduction the isothermal quality during cooling is enhanced by a wide margin. In concrete terms, by optimizing the heater- and block-part parameters, it is possible to obtain an isothermal rating during cooling of within ±1%.
- Utilizing a heater module of the present invention as described above in CVD equipment employed in deposition of metal films as well as dielectric films, in etcher equipment employed in etching metal films as well as dielectric films, in coater/developer equipment employed in thermosetting of photoresists in photolithography, and in low-k dielectric baking devices employed in heating/baking of low-k films is especially efficacious owing to the effect of enhanced heater cooling speed.
- What is more, semiconductor manufacturing equipment in which a heater module of the present invention is utilized is a means that can serve to heighten productivity and reduce costs, and by which improvement in both characteristics and performance of wafers and other processed articles is recognizable.
- Sets of two disks 335 mm diameter and 10 mm thickness made of the ceramic materials set forth in the table below were prepared, and on the top face of one disk in each set a heating element was formed by tungsten metallization. Onto this ceramic disk the remaining ceramic disk in each set was overlaid, putting the heating element into a sandwich which was then hot-press joined using a hot press device, whereby ceramic heater parts were fabricated.
- Block parts, made from each of the metal and ceramic materials set forth in the following table and having the same diameter as the foregoing heater parts, were also fabricated. In doing so, the percent heat capacity of the block part with respect to the total heat capacity of the heater and block parts was varied as indicated in the table below by varying the block part thickness. In addition, in all samples, the top face of the block part (the face where it abuts with the heater part) was surfaced by lapping.
- Heater modules in the first aspect according to the present invention were assembled using these heater parts and block parts. That is, they were lent a structure in which during heating the heater part and the block part abut, and in which during cooling the block part is lowered to separate it from the heater part. It should be understood that elevation of the block part and its abutment onto/fixing against the heater part was by means of oil pressure or air pressure, and furthermore that with Sample 6 only, the heater part and the block part were held fast by vacuum-chucking. It should also be understood that the distance between the heater part and the block part separated during cooling was fixed at 200 mm with all of the samples.
- Isothermal ratings for each of the sample heater modules having been heated (200° C.) were found by applying a 200-V voltage to the heater part in abutment with the block part and heating to 200° C., maintaining that temperature for 10 minutes, and then measuring the temperature at 9 points within the top face (wafer-carrying surface) of the heater module. After that the block part was lowered to separate it from the heater part, and the speed with which the isolated heater part, left to radiate heat, cooled down to 150° C. was measured. In doing so, isothermal ratings when cooled (15° C.) were found from the temperatures at the 9 points within the top face likewise as just noted. These results were tabulated and set forth in the following table.
TABLE Cool- ing Isothermal rating Heater Block Percent Shifting speed (±%) Sam- part part heat & holding (° C./ When When ple material material capacity fast min) heated cooled 1 AlN Al 5 Oil press. 5 0.5 0.7 2 AlN Al 15 Oil press. 7 0.5 0.7 3 AlN Al 20 Oil press. 10 0.5 0.7 4 AlN Al 100 Oil press. 25 0.5 0.7 5 AlN Al 200 Oil press. 32 0.5 0.7 6 AlN Al 100 Vac. 27 0.5 0.7 chuck. 7 AlN Al 100 Air press. 25 0.5 0.7 8 SiC Al 100 Oil press. 23 0.6 0.8 9 Si3N4 Al 100 Oil press. 26 0.9 0.95 10 Al2O3 Al 100 Oil press. 21 0.9 0.95 11 BN Al 100 Oil press. 33 0.4 0.6 12 AlN Mg 100 Oil press. 22 0.5 0.7 13 AlN Cu 100 Oil press. 28 0.5 0.7 14 AlN Fe 100 Oil press. 20 0.5 0.7 15 AlN SUS 100 Oil press. 18 0.5 0.7 16 AlN Al2O3 100 Oil press. 18 0.5 0.7 17 AlN AlN 100 Oil press. 22 0.5 0.7 18 AlN Si3N4 100 Oil press. 18 0.5 0.7 19 AlN AlN 100 Oil press. 23 0.5 0.7 20 AlN BN 100 Oil press. 23 0.5 0.7 - From the foregoing results, it is evident that with whichever of the samples as heater modules by the present invention high heater-cooling speeds of several ° C./min or faster were obtained, and that isothermal ratings of within ±1% when heated and when cooled were sustained. In particular, it is evident that by making the percent heat capacity of the block part 20% or less, extremely high heater-cooling speeds of 10° C./min or more can be achieved even as superior isothermal ratings are maintained.
- An AlN heater part the same as that of the foregoing Embodiment 1 was prepared, and an air-cool cooling block, made of aluminum, having a 60 liter/min capacity was installed on the heater part, fixed on the reverse face thereof. It will be appreciated that a block part was not used in the comparative example. This heater that has been in use to date was heated to 200° C., which temperature was maintained for 10 minutes, and then was cooled down to 150° C. by means of the air-cool cooling block.
- In that instance, isothermal rating when heated and when cooled (150° C.) was found in the same way as in Embodiment 1. The results were a heater cooling speed of 1° C./min, and an isothermal rating of ±1.5% when heated and ±1.7% when cooled, which was considerably inferior to that of the samples of the present invention in the foregoing Embodiment 1.
- A heater module was assembled utilizing the same heater part and block part as with
Sample 4 in the foregoing Embodiment 1, but the reverse face of the AlN-made heater part—i.e., the face where it abuts with the Al-made block part—was covered with a Cu layer 0.2 mm in thickness. - The same testing and evaluation as with Embodiment 1 were performed on this heater module, with the result being that the heater cooling speed and the isothermal rating were the same as with
Sample 4 in Embodiment 1. WithSample 4 in Embodiment 1, however, at 500 cycles chips 0.1-0.2 mm in diameter appeared in the edge of the reverse face of the heater part, but with thepresent Embodiment 2 sample, no chips or like flaws were discernable at all. - A heater module was assembled utilizing the same heater part and block part as with
Sample 4 in the foregoing Embodiment 1, but the top face of the Al-made block part—i.e., the face where it abuts with the AlN-made heater part—was finished to a specular surface by a polishing process. - The same testing and evaluation as with Embodiment 1 was performed on this heater module. Thanks to the top face of the block part having been made mirror-like, heat radiant from the heater part was reflected back, keeping the block part from absorbing the heat, and therefore even with the separation between the heater part and the block part curtailed to 50 mm, the same heater cooling speed and isothermal rating as with
Sample 4 in Embodiment 1, where the heater part-block part separation was set at 200 mm, were obtained. - The heater module represented in
FIG. 2 , in the second aspect of the present invention, was assembled utilizing the same heater part and block part as withSample 4 in the foregoing Embodiment 1, but the block part was installed to be shiftable up and down by means of oil pressure. That is, the heater module was lent a structure in which during heating the heater part and the block part are separated and the block part is brought into contact with, and rested on, the bottom part of the chamber, and during cooling, the block part is lifted to abut on the heater part. It should be understood that the remaining aspects of the heater module were exactly the same as withSample 4 in Embodiment 1. - The isothermal rating of the heater part having been heated (200° C.) was found by heating it in isolation to 200° C., maintaining that temperature for 10 minutes, and thereafter measuring its temperature at 9 points within the top face. Subsequently, the block part was lifted to abut it on the heater part, the heater part was allowed to cool down to 150° C., and the cooling speed was measured and the isothermal rating when cooled (150° C.) was found.
- The results were that the heater cooling speed and isothermal rating were the same as with
Sample 4 in Embodiment 1. However, with the block part, which had been lowered until it contacted the chamber bottom part, cooled down to room temperature the time until preparation for the next cooling of the heater completed was shortened to ⅓ by comparison withSample 4 in Embodiment 1. - The heater module represented in
FIG. 3 , in the second aspect of the present invention, was assembled utilizing the same heater part and block part as withSample 4 in the foregoing Embodiment 1, but the heater part was installed to be shiftable up and down by means of oil pressure. That is, the heater module was lent a structure in which during heating the heater part and the block part are separated and the block part is brought into contact with, and rested on, the bottom part of the chamber, and during cooling, the heater part is lowered to abut on the block part. It should be understood that the remaining aspects of the heater module were exactly the same as withSample 4 in Embodiment 1. - The isothermal rating of the heater part having been heated (200° C.) was found by heating it in isolation to 200° C., maintaining that temperature for 10 minutes, and thereafter measuring its temperature at 9 points within the top face. Subsequently, the heater part was lowered to abut it on the block part, the heater part was allowed to cool down to 150° C., and the cooling speed was measured and the isothermal rating when cooled (150° C.) was found.
- The results were that the heater cooling speed and isothermal rating were the same as with
Sample 4 in Embodiment 1. However, with the block part, resting on and in constant contact with the chamber bottom part, cooled down to room temperature the time until preparation for the next cooling of the heater completed was shortened to ⅓ by comparison withSample 4 in Embodiment 1. - Heater modules identical with those of the foregoing
Embodiment 4 and comparative example were installed into place within a low-k film baking device, and an actual-practice implementation was made in which a low-k film coated onto a 12-inch Si wafer was cured. - With the low-k film cured in the baking device utilizing the heater module of
Embodiment 4, the low-k film adhesive strength improved 20% by comparison with the case with the baking device utilizing the heater module of the comparative example. In addition, the time for the heater to cool was curtailed to 1/25 by comparison with the comparative example. - As given by the present invention, for semiconductor manufacturing equipment a heater module may be rendered in which the cooling speed of the heater post-heating may be heightened several times or more, preferentially 10 times or more, than conventional, and that can contribute toward bettering and improving productivity. What is more, utilizing the heater module lets semiconductor manufacturing equipment be scaled down, and makes appreciable cost reduction possible.
Claims (21)
1. A heater module for semiconductor manufacturing equipment, comprising:
a heater part for controlled heating of a wafer placed on an obverse face thereof; and
a block part installed in the heater module to be shiftable relative to said heater part, for varying heat capacity in total with said heater part by abutting on as well as separating from a reverse surface of said heater part.
2. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein the heat capacity of said block part is 20% or more of the total heat capacity of said heater part and said block part.
3. A method of operating a heater module for semiconductor manufacturing equipment as set forth in claim 1 , comprising:
bringing said heater part and said block part into abutment when the heater module is to heat; and
relatively shift-separating said block part from said heater part when the heater module is to be cooled, to quicken the speed with which said heater part cools.
4. A method of operating a heater module for semiconductor manufacturing equipment as set forth in claim 1 , comprising:
separating said heater part and said block part when the heater module is to heat; and
relatively shifting said block part and said heater part into abutment for conducting heat into said block part when the heater module is to be cooled, to quicken the speed with which said heater part cools.
5. A method of operating a heater module for semiconductor manufacturing equipment as set forth in claim 1 , comprising vacuum-chucking said block part to said heater part when said heater part and said block part are in abutment, to fix said block part to said heater part.
6. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein at least one of either of abutting surfaces along which said heater part and said block part abut on each other is planarized.
7. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein said block part is affixed to a bottom part of a chamber in the semiconductor manufacturing equipment.
8. A heater module for semiconductor manufacturing equipment as set forth in claim 7 , wherein the chamber bottom is water-cooled.
9. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein said heater part is made of ceramic, and a heating element is formed therein.
10. A heater module for semiconductor manufacturing equipment as set forth in claim 9 , wherein the ceramic is at least one selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
11. A heater module for semiconductor manufacturing equipment as set forth in claim 9 , wherein said heater part is superficially covered with metal at least where said heater abuts with said block part.
12. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein said block part is at least one selected from the group consisting of aluminum, magnesium, copper, iron, stainless steel, aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, and boron nitride.
13. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein said block part is either identical or similar to said heater part in form, and said block part in diametrical dimension is within ±25% of said heater part in diametrical dimension.
14. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein either said heater part or said block part is shifted relative to the other by means of oil pressure.
15. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein the cooling speed of said heater part is 10° C./min or more.
16. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein while a wafer set in place on said heater part is being cooled, the heater module has an isothermal rating that is within ±1%.
17. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , utilized in CVD equipment, etcher equipment, coater/developer equipment, or a low-k dielectric baking device.
18. Semiconductor manufacturing equipment having installed therein a heater module for semiconductor manufacturing equipment as set forth in claim 1 .
19. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein said block part is shiftable into abutment on a bottom part of a chamber in the semiconductor manufacturing equipment.
20. A heater module for semiconductor manufacturing equipment as set forth in claim 19 , wherein the chamber bottom is water-cooled.
21. A heater module for semiconductor manufacturing equipment as set forth in claim 1 , wherein either said heater part or said block part is shifted relative to the other by means of air pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/559,389 US20070068921A1 (en) | 2002-06-05 | 2006-11-13 | Heater Module for Semiconductor Manufacturing Equipment |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002163747A JP4311914B2 (en) | 2002-06-05 | 2002-06-05 | Heater module for semiconductor manufacturing equipment |
JPJP-2002-163747 | 2002-06-05 | ||
US11/160,856 US7145106B2 (en) | 2002-06-05 | 2005-07-13 | Heater module for semiconductor manufacturing equipment |
US11/559,389 US20070068921A1 (en) | 2002-06-05 | 2006-11-13 | Heater Module for Semiconductor Manufacturing Equipment |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/160,856 Continuation US7145106B2 (en) | 2002-06-05 | 2005-07-13 | Heater module for semiconductor manufacturing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
US20070068921A1 true US20070068921A1 (en) | 2007-03-29 |
Family
ID=29727551
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/487,842 Expired - Lifetime US6963052B2 (en) | 2002-06-05 | 2003-05-19 | Heater module for semiconductor manufacturing equipment |
US11/160,856 Expired - Fee Related US7145106B2 (en) | 2002-06-05 | 2005-07-13 | Heater module for semiconductor manufacturing equipment |
US11/559,389 Abandoned US20070068921A1 (en) | 2002-06-05 | 2006-11-13 | Heater Module for Semiconductor Manufacturing Equipment |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/487,842 Expired - Lifetime US6963052B2 (en) | 2002-06-05 | 2003-05-19 | Heater module for semiconductor manufacturing equipment |
US11/160,856 Expired - Fee Related US7145106B2 (en) | 2002-06-05 | 2005-07-13 | Heater module for semiconductor manufacturing equipment |
Country Status (7)
Country | Link |
---|---|
US (3) | US6963052B2 (en) |
EP (1) | EP1511069A1 (en) |
JP (2) | JP4311914B2 (en) |
KR (1) | KR100584055B1 (en) |
CN (1) | CN100353493C (en) |
TW (1) | TWI281711B (en) |
WO (1) | WO2003105199A1 (en) |
Families Citing this family (308)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4311914B2 (en) * | 2002-06-05 | 2009-08-12 | 住友電気工業株式会社 | Heater module for semiconductor manufacturing equipment |
JP2005150506A (en) | 2003-11-18 | 2005-06-09 | Sumitomo Electric Ind Ltd | Semiconductor manufacturing apparatus |
JP2007201484A (en) * | 2004-11-30 | 2007-08-09 | Sumitomo Electric Ind Ltd | Wafer holder for wafer prober, and wafer prober mounted with the same |
JP3945527B2 (en) | 2004-11-30 | 2007-07-18 | 住友電気工業株式会社 | Wafer holder for wafer prober and wafer prober equipped with the same |
JP3972944B2 (en) | 2005-09-12 | 2007-09-05 | 住友電気工業株式会社 | Ceramic heater and semiconductor manufacturing apparatus having the same |
JP4497103B2 (en) | 2006-02-21 | 2010-07-07 | 住友電気工業株式会社 | Wafer holder, heater unit on which it is mounted, and wafer prober |
JP4739132B2 (en) * | 2006-07-04 | 2011-08-03 | Okiセミコンダクタ株式会社 | Heat treatment apparatus and heat treatment method |
JP5056228B2 (en) * | 2007-07-13 | 2012-10-24 | 住友電気工業株式会社 | Heater unit and semiconductor device manufacturing / inspection apparatus having the same |
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
JP5447123B2 (en) * | 2009-05-28 | 2014-03-19 | 住友電気工業株式会社 | Heater unit and apparatus provided with the same |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
JP5416570B2 (en) * | 2009-12-15 | 2014-02-12 | 住友電気工業株式会社 | Heating / cooling device and apparatus equipped with the same |
JP5293718B2 (en) * | 2010-10-01 | 2013-09-18 | 東京エレクトロン株式会社 | Heat treatment apparatus, heat treatment method and storage medium |
JP5605265B2 (en) * | 2011-02-24 | 2014-10-15 | 住友電気工業株式会社 | Heater unit for semiconductor manufacturing equipment |
KR101324960B1 (en) * | 2011-04-26 | 2013-11-04 | 주식회사 탑 엔지니어링 | Chuck Assembly for Semiconductor Substrate Processing Device |
JP5658083B2 (en) * | 2011-05-11 | 2015-01-21 | 株式会社Screenセミコンダクターソリューションズ | Temperature change system |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
CN102637593B (en) * | 2012-03-19 | 2017-09-19 | 晶能光电(江西)有限公司 | A kind of method and apparatus that short annealing alloy is carried out to epitaxial wafer |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
JP5630526B2 (en) * | 2013-04-08 | 2014-11-26 | 東京エレクトロン株式会社 | Heat treatment equipment |
JP6088909B2 (en) * | 2013-06-04 | 2017-03-01 | 株式会社Screenセミコンダクターソリューションズ | Heat treatment equipment |
CN104465453B (en) * | 2013-09-20 | 2018-10-30 | 住友电气工业株式会社 | The wafer heater of plasma CVD equipment |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) * | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102263121B1 (en) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor device and manufacuring method thereof |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (en) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming metal interconnection and method of fabricating semiconductor device using the same |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
KR102354490B1 (en) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (en) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
JP6285586B2 (en) * | 2017-02-06 | 2018-02-28 | 株式会社Screenセミコンダクターソリューションズ | Heating plate cooling method |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
USD876504S1 (en) | 2017-04-03 | 2020-02-25 | Asm Ip Holding B.V. | Exhaust flow control ring for semiconductor deposition apparatus |
KR102457289B1 (en) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (en) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
KR102443047B1 (en) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
KR102597978B1 (en) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | Storage device for storing wafer cassettes for use with batch furnaces |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (en) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (en) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method |
TW202344708A (en) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
TWI816783B (en) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
KR20210027265A (en) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material |
JP2021529254A (en) | 2018-06-27 | 2021-10-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
KR20200002519A (en) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a thin film and manufacturing a semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
CN113302036A (en) * | 2018-12-19 | 2021-08-24 | 捷普有限公司 | Apparatus, system, and method for hybrid additive manufacturing nozzle |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
JP2020136677A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Periodic accumulation method for filing concave part formed inside front surface of base material, and device |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108248A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | STRUCTURE INCLUDING SiOCN LAYER AND METHOD OF FORMING SAME |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (en) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | Method of forming topologically controlled amorphous carbon polymer films |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
CN112992667A (en) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210117157A (en) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Asm Ip私人控股有限公司 | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | Injector, and substrate processing apparatus |
CN114639631A (en) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | Fixing device for measuring jumping and swinging |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5140895A (en) * | 1989-10-18 | 1992-08-25 | Aida Engineering Co., Ltd. | Valve mechanism for controlling a pressure difference between an upper and a lower chamber of a hydraulic cylinder for a die cushion for a press |
US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2888026B2 (en) * | 1992-04-30 | 1999-05-10 | 松下電器産業株式会社 | Plasma CVD equipment |
KR100290748B1 (en) | 1993-01-29 | 2001-06-01 | 히가시 데쓰로 | Plasma processing apparatus |
JPH0737708A (en) | 1993-07-22 | 1995-02-07 | Matsushita Electric Ind Co Ltd | Manufacture of chip component |
JPH08130237A (en) | 1994-11-01 | 1996-05-21 | Fuji Electric Co Ltd | Plasma treatment equipment |
JP2000164601A (en) | 1998-11-24 | 2000-06-16 | Dainippon Screen Mfg Co Ltd | Board heat treatment apparatus |
JP4311914B2 (en) * | 2002-06-05 | 2009-08-12 | 住友電気工業株式会社 | Heater module for semiconductor manufacturing equipment |
-
2002
- 2002-06-05 JP JP2002163747A patent/JP4311914B2/en not_active Expired - Fee Related
-
2003
- 2003-05-19 CN CNB038009196A patent/CN100353493C/en not_active Expired - Fee Related
- 2003-05-19 EP EP03757191A patent/EP1511069A1/en not_active Withdrawn
- 2003-05-19 US US10/487,842 patent/US6963052B2/en not_active Expired - Lifetime
- 2003-05-19 WO PCT/JP2003/006239 patent/WO2003105199A1/en active Application Filing
- 2003-05-19 KR KR1020047002800A patent/KR100584055B1/en active IP Right Grant
- 2003-05-30 TW TW092114738A patent/TWI281711B/en not_active IP Right Cessation
-
2005
- 2005-07-13 US US11/160,856 patent/US7145106B2/en not_active Expired - Fee Related
-
2006
- 2006-11-09 JP JP2006303542A patent/JP4479712B2/en not_active Expired - Fee Related
- 2006-11-13 US US11/559,389 patent/US20070068921A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5140895A (en) * | 1989-10-18 | 1992-08-25 | Aida Engineering Co., Ltd. | Valve mechanism for controlling a pressure difference between an upper and a lower chamber of a hydraulic cylinder for a die cushion for a press |
US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
Also Published As
Publication number | Publication date |
---|---|
JP2004014655A (en) | 2004-01-15 |
JP4311914B2 (en) | 2009-08-12 |
TW200405445A (en) | 2004-04-01 |
JP2007184550A (en) | 2007-07-19 |
WO2003105199A1 (en) | 2003-12-18 |
KR100584055B1 (en) | 2006-05-30 |
KR20040032153A (en) | 2004-04-14 |
CN100353493C (en) | 2007-12-05 |
JP4479712B2 (en) | 2010-06-09 |
EP1511069A1 (en) | 2005-03-02 |
US20050242079A1 (en) | 2005-11-03 |
US7145106B2 (en) | 2006-12-05 |
US6963052B2 (en) | 2005-11-08 |
TWI281711B (en) | 2007-05-21 |
CN1547760A (en) | 2004-11-17 |
US20040238523A1 (en) | 2004-12-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7145106B2 (en) | Heater module for semiconductor manufacturing equipment | |
US20210087680A1 (en) | Susceptor having cooling device | |
TWI481297B (en) | Method and apparatus for controlling spatial temperature distribution | |
EP1675160B1 (en) | Electrostatic chuck with built-in heater | |
US7764872B2 (en) | Cooling device, and apparatus and method for manufacturing image display panel using cooling device | |
JP4549022B2 (en) | Method and apparatus for controlling spatial temperature distribution across the surface of a workpiece support | |
US6774060B2 (en) | Methods and apparatus for thermally processing wafers | |
US20120074126A1 (en) | Wafer profile modification through hot/cold temperature zones on pedestal for semiconductor manufacturing equipment | |
JP2009200529A (en) | Method and apparatus for controlling spatial temperature distribution across surface of workpiece support | |
JPH0837193A (en) | Method and apparatus for improving uniformity of surface temperature of semiconductor wafer | |
JP5434636B2 (en) | Substrate holder with electrostatic chuck | |
US6660975B2 (en) | Method for producing flat wafer chucks | |
KR20040096496A (en) | Heated vacuum support apparatus | |
JP2002530847A (en) | Heat treatment apparatus, system and method for treating semiconductor substrate | |
WO2022209292A1 (en) | Placement panel and placement structure | |
WO2023145054A1 (en) | Heater unit, multilayer structure, processing device, and method for manufacturing semiconductor device | |
JPH07307258A (en) | Temperature compensation member for heat treatment, heat treatment method of wafer employing the temperature compensation member and apparatus for the same | |
JP2003234397A (en) | Holding apparatus for body to be treated | |
JPH07201953A (en) | Stage of semiconductor substrate | |
KR20050068760A (en) | Hot plate chiller of a semiconductor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |