US20070045638A1 - III-nitride light emitting device with double heterostructure light emitting region - Google Patents

III-nitride light emitting device with double heterostructure light emitting region Download PDF

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US20070045638A1
US20070045638A1 US11/211,921 US21192105A US2007045638A1 US 20070045638 A1 US20070045638 A1 US 20070045638A1 US 21192105 A US21192105 A US 21192105A US 2007045638 A1 US2007045638 A1 US 2007045638A1
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light emitting
emitting layer
layer
iii
type region
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Yu-Chen Shen
Nathan Gardner
Satoshi Watanabe
Michael Krames
Gerd Mueller
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Lumileds LLC
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Lumileds LLC
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Priority to US11/211,921 priority Critical patent/US20070045638A1/en
Application filed by Lumileds LLC filed Critical Lumileds LLC
Priority to KR1020087006929A priority patent/KR20080040770A/ko
Priority to PCT/IB2006/052819 priority patent/WO2007023419A1/en
Priority to RU2008110934/28A priority patent/RU2412505C2/ru
Priority to CN2006800397908A priority patent/CN101297410B/zh
Priority to EP06795665.6A priority patent/EP1922766B1/en
Priority to BRPI0615190-6A priority patent/BRPI0615190B1/pt
Priority to TW095130686A priority patent/TWI438921B/zh
Priority to JP2006256463A priority patent/JP2007067418A/ja
Publication of US20070045638A1 publication Critical patent/US20070045638A1/en
Priority to US11/682,276 priority patent/US7880186B2/en
Priority to US12/495,464 priority patent/US8847252B2/en
Assigned to PHILIPS LUMILEDS LIGHTING COMPANY LLC reassignment PHILIPS LUMILEDS LIGHTING COMPANY LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LUMILEDS LIGHTING U.S. LLC, LUMILEDS LIGHTING U.S., LLC, LUMILEDS LIGHTING, U.S. LLC, LUMILEDS LIGHTING, U.S., LLC
Priority to JP2013039423A priority patent/JP2013102240A/ja
Priority to US14/501,167 priority patent/US9640724B2/en
Assigned to LUMILEDS LLC reassignment LUMILEDS LLC CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: PHILIPS LUMILEDS LIGHTING COMPANY LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Definitions

  • This invention relates to the light emitting region of a semiconductor light emitting device.
  • LEDs light emitting diodes
  • RCLEDs resonant cavity light emitting diodes
  • VCSELs vertical cavity laser diodes
  • edge emitting lasers are among the most efficient light sources currently available.
  • Materials systems currently of interest in the manufacture of high-brightness light emitting devices capable of operation across the visible spectrum include Group III-V semiconductors, particularly binary, ternary, and quaternary alloys of gallium, aluminum, indium, and nitrogen, also referred to as III-nitride materials.
  • III-nitride light emitting devices are fabricated by epitaxially growing a stack of semiconductor layers of different compositions and dopant concentrations on a sapphire, silicon carbide, III-nitride, or other suitable substrate by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or other epitaxial techniques.
  • MOCVD metal-organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • the stack often includes one or more n-type layers doped with, for example, Si, formed over the substrate, a light emitting or active region formed over the n-type layer or layers, and one or more p-type layers doped with, for example, Mg, formed over the active region.
  • III-nitride devices formed on conductive substrates may have the p- and n-contacts formed on opposite sides of the device.
  • III-nitride devices are fabricated on insulating substrates, such as sapphire, with both contacts on the same side of the device. Such devices are mounted so light is extracted either through the contacts (known as an epitaxy-up device) or through a surface of the device opposite the contacts (known as a flip chip device).
  • U.S. Pat. No. 5,747,832 teaches a “light emitting gallium nitride-based compound semiconductor device of a double-heterostructure.
  • the double-heterostructure includes a light-emitting layer formed of a low-resistivity In x Ga 1 ⁇ x N (0 ⁇ x ⁇ 1) compound semiconductor doped with p-type and/or n-type impurity.” See U.S. Pat. No. 5,747,832, abstract.
  • column 5 lines 45 - 50 recite “[i]n the present invention, the light-emitting layer 18 preferably has a thickness within a range such that the light-emitting device of the present invention provides a practical relative light intensity of 90% or more.
  • the light-emitting layer 18 preferably has a thickness of 10 ⁇ to 0.5 ⁇ m, and more preferably 0.01 to 0.2 ⁇ m.”
  • Column 10 lines 44 - 49 teach “[i] n the third embodiment, the n-type impurity doped in In x Ga 1 ⁇ x N of the light-emitting layer 18 is preferably silicon (Si).
  • the concentration of the n-type impurity is preferably 1 ⁇ 10 17 /cm 3 to 1 ⁇ 10 21 /cm 3 from the viewpoint of the light emission characteristics, and more preferably 1 ⁇ 10 18 /cm 3 to 1 ⁇ 10 20 /cm 3 .”
  • a III-nitride light emitting layer is disposed between an n-type region and a p-type region.
  • the light emitting layer is doped to a dopant concentration between 6 ⁇ 10 8 cm ⁇ 3 and 5 ⁇ 10 19 cm ⁇ 3 , and has a thickness between 50 ⁇ and 250 ⁇ .
  • the light emitting layer is sandwiched between and in direct contact with two n-type spacer layers and one or both of the spacer layers is doped to a dopant concentration between 6 ⁇ 10 18 cm ⁇ 3 and 5 ⁇ 10 19 cm 3 .
  • FIG. 1 illustrates a III-nitride light emitting device.
  • FIG. 2 is a plot of external quantum efficiency as a function of current density for a device as shown in FIG. 1 and a device according to embodiments of the present invention.
  • FIG. 3 illustrates a III-nitride light emitting device according to embodiments of the invention.
  • FIG. 4 is a plot of decay time as a function of silicon doping level for several InGaN films.
  • FIGS. 5 and 6 are a plan view and a cross sectional view of a large junction flip chip light emitting device.
  • FIG. 7 illustrates a thin film light emitting device.
  • FIG. 8 is an exploded view of a packaged light emitting device.
  • FIGS. 9A and 9B illustrate relative internal quantum efficiency as a function of silicon doping level in the light emitting layer and first and second spacer layers for devices according to embodiments of the invention emitting light at 450 nm and 400 nm, respectively.
  • FIG. 10 illustrates relative internal quantum efficiency as a function of light emitting layer thickness for several devices.
  • FIG. 11 illustrates injection efficiency and internal quantum efficiency as a function of blocking layer composition for several simulated devices.
  • FIG. 12 illustrates relative internal quantum efficiency as a function of blocking layer composition observed in actual devices.
  • FIGS. 13A-13K illustrate portions of the conduction band for devices including grading in the light emitting region.
  • FIG. 1 illustrates a common III-nitride light emitting device.
  • An n-type region 11 is grown over a sapphire substrate 10 .
  • An active region 12 including multiple thin quantum well layers separated by barrier layers, is grown over n-type region 11 , followed by a GaN spacer layer 13 , a p-type AlGaN layer 14 , and a p-type contact layer 15 .
  • FIG. 2 illustrates the external quantum efficiency of a device such as the device of FIG. 1 (triangles on FIG. 2 ) and a device according to an embodiment of the present invention (circles on FIG. 2 ).
  • the external quantum efficiency is the internal quantum efficiency, defined as the flux of photons produced divided by the flux of carriers supplied, multiplied by the extraction efficiency. For a given lamp design, the extraction efficiency is constant, thus the extraction efficiency is the same for both devices shown in FIG. 2 .
  • the current density applied to the device of FIG. 1 increases, the external quantum efficiency of the device initially increases, then decreases, as illustrated in FIG. 2 . As the current density increases past zero, the external quantum efficiency increases, reaching a peak at a current density of about 10 A/cm 2 .
  • Embodiments of the invention are designed to reduce or reverse the drop in quantum efficiency at high current density.
  • III-nitride light emitting devices include a thick double heterostructure light emitting region that is highly doped. Though the embodiments below describe devices where the light emitting layer is doped n-type with Si, it is to be understood that in other embodiments, other dopant species including p-type dopant species may be used.
  • the thick double heterostructure light emitting region may reduce charge carrier density, and doping in and adjacent to the light emitting region may improve the material quality of the light emitting region, both of which may reduce the number of carriers lost to nonradiative recombination.
  • Embodiments of the invention are designed to reduce or reverse the drop in quantum efficiency at high current density observed in FIG. 2 for the device of FIG. 1 .
  • FIG. 3 illustrates a light emitting device according to embodiments of the invention.
  • a light emitting region 35 is sandwiched between an n-type region 31 and a p-type region 39 .
  • Light emitting region 35 may be spaced apart from n-type region 31 and p-type region 39 by optional first and second spacer layers 33 and 37 .
  • the device may include an optional preparation layer 32 disposed between n-type region 31 and first spacer 33 , and/or an optional blocking layer 38 , disposed between second spacer 37 and p-type region 39 .
  • light emitting region 35 may include one or more thick light emitting layers, for example thicker than 50 angstroms.
  • light emitting region 35 includes a single, thick light emitting layer with a thickness between 50 and 600 angstroms, more preferably between 100 and 250 angstroms.
  • the upper limit on thickness is due to current growth techniques which result in poor material quality as the thickness of the light emitting layer increases beyond 600 angstroms, for example at thicknesses above 1000 angstroms. Poor material quality typically results in reduced internal quantum efficiency. As growth techniques improve, growth of devices with thicker light emitting layers without reduced internal quantum efficiency may be possible and thus within the scope of embodiments of the invention.
  • the optimal thickness may depend on the number of defects within the light emitting layer. In general, as the number of defects increases, the optimal thickness of the light emitting layer decreases. In addition, defects may be centers for nonradiative recombination, thus it is desirable to reduce the number of defects as much as possible.
  • a comment defect in III-nitride materials is a threading dislocation.
  • the concentration of threading dislocations is measured per unit area. The concentration of threading dislocations in the light emitting region is preferably limited to less than 10 9 cm ⁇ 2 , more preferably limited to less than 10 8 cm ⁇ 2 , more preferably limited to less than 10 7 cm ⁇ 2 , and more preferably limited to less than 10 6 cm ⁇ 2 .
  • Achieving the above-described threading dislocation concentrations may require growth techniques such as epitaxial lateral overgrowth, hydride vapor phase epitaxy, and growth on freestanding GaN substrates.
  • Epitaxial lateral overgrowth involves selective growth of GaN over openings in a mask layer formed on GaN layer grown on a conventional growth substrate such as sapphire. The coalescence of the selectively-grown GaN may enable the growth of a flat GaN surface over the entire growth substrate. Layers grown subsequent to the selectively-grown GaN layer may exhibit low defect densities.
  • Epitaxial lateral overgrowth is described in more detail in Mukai et al., “Ultraviolet InGaN and GaN Single-Quantum Well-Structure Light-Emitting Diodes Grown on Epitaxial Laterally Overgrown GaN Substrates,” Jpn. J. Appl. Phys. Vol. 38 (1999) p. 5735, which is incorporated herein by reference.
  • Hydride vapor phase epitaxial growth of freestanding GaN substrates is described in more detail in Motoki et al., “Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate,” Jpn. J. Appl. Phys. Vol. 40 (2001) p. L140, which is incorporated herein by reference.
  • the light emitting layers of light emitting region 35 region are doped, for example doped n-type with Si.
  • Si is used as the dopant because Si may provide other improvements to the material, such as a rough surface that may improve light extraction from the device or relieve strain in the light emitting layer.
  • FIG. 4 is a plot of decay time as a function of silicon doping level for several InGaN films. To gather the data illustrated in FIG. 4 , InGaN films doped to the levels illustrated were probed with a laser at low excitation intensities. The lifetimes of the carriers, i.e. the length of time before a carrier is consumed by a defect, were measured.
  • FIG. 4 demonstrates that the rate of nonradiative recombination may be influenced by Si-doping levels in the light emitting layers.
  • FIG. 9A illustrates the internal quantum efficiency at 330 A/cm 2 as a function of silicon doping level for devices with 96 angstrom thick In 0.16 Ga 0.84 N light emitting layers which emit light at a peak wavelength of about 450 nm.
  • FIG. 9B illustrates the internal quantum efficiency at 330 ⁇ /cm 2 as a function of silicon doping level for devices with 96 angstrom thick In 0.08 Ga 0.92 N light emitting layers which emit light at a peak wavelength of about 400 nm.
  • FIGS. 9A and 9B illustrate that devices with InGaN light emitting layers with silicon doping levels between about 6 ⁇ 10 18 and 3 ⁇ 10 19 cm ⁇ 3 have the highest internal quantum efficiency.
  • FIG. 9A illustrates the internal quantum efficiency at 330 A/cm 2 as a function of silicon doping level for devices with 96 angstrom thick In 0.16 Ga 0.84 N light emitting layers which emit light at a peak wavelength of about 450 nm.
  • FIG. 9B illustrates the internal quantum efficiency
  • FIG. 9A illustrates a peak in internal quantum efficiency at 330 A/cm 2 at about 2 ⁇ 10 9 cm 3 for a device emitting light at a peak wavelength of about 450 nm.
  • FIG. 9B illustrates a peak in internal quantum efficiency at about 8 ⁇ 10 18 cm ⁇ 3 for a device emitting light at a peak wavelength of about 400 nm.
  • the doping level in the light emitting layer drops below 6 ⁇ 10 18 cm ⁇ 3 or increases above 3 ⁇ 10 19 cm ⁇ 3 , the internal quantum efficiency drops.
  • the silicon doping level increases beyond 3 ⁇ 10 19 cm ⁇ 3 , the material quality becomes poor.
  • the circles in FIG. 2 illustrate the external quantum efficiency as a function of current density for a device according to embodiments of the invention.
  • a 130 angstrom thick In 0.12 Ga 0.88 N light emitting layer is doped with Si to a concentration of 10 19 cm ⁇ 3 .
  • This device emits light at about 430 nm.
  • the external quantum efficiency improves as the current density increases, then levels off at an external quantum efficiency of about 26% at a current density of about 250 A/cm 2 .
  • the device of FIG. 1 has an external quantum efficiency of only about 18%, which drops as the current density increases.
  • device performance significantly improves only when the optimal thicknesses according to embodiments of the invention and the optimal silicon doping levels according to embodiments of the invention are implemented together, as illustrated in FIG. 10 , which is a plot of internal quantum efficiency at 330 A/cm 2 as a function of light emitting layer thickness for several devices.
  • the diamonds in FIG. 10 represent devices with a light emitting layer with a threading dislocation density of 1.5 ⁇ 10 9 cm ⁇ 2 doped to 10 18 cm ⁇ 3 , a doping level below the optimal silicon doping ranges described above.
  • the squares in FIG. 10 represent a device with a light emitting layer with a threading dislocation density of 4 ⁇ 10 8 cm ⁇ 2 doped to 10 19 cm ⁇ 3 , a doping level within the optimal silicon doping ranges described above.
  • the internal quantum efficiency drops as the thickness of the light emitting layer increases into the optimal thickness ranges described above.
  • the internal quantum efficiency for a device with a light emitting layer doped to 10 18 cm ⁇ 3 drops from a peak at a light emitting layer thickness less than 50 angstroms, to zero at a light emitting layer thickness of about 130 angstroms.
  • the squares in FIG. 10 illustrate that as illustrated by the squares in FIG.
  • the internal quantum efficiency is above the peak internal quantum efficiency observed for the light emitting layer doped to only 10 18 cm ⁇ 3 .
  • FIG. 10 also illustrates that even if the light emitting layer is doped to the optimal doping levels described above, the internal quantum efficiency of the device suffers if the light emitting layer thickness is outside the optimal thickness range described above.
  • the squares in FIG. 10 illustrate that at 30 angstroms, a common thickness for thin quantum wells in a device such as illustrated in FIG. 1 and a thickness below the optimal light emitting layer thicknesses described above, a device with a light emitting layer doped to an optimal doping level of 10 19 cm ⁇ 3 still demonstrates very low internal quantum efficiency.
  • both the light emitting layer thickness and the light emitting layer dopant concentration must be within the optimal ranges described above in order to realize improvements in internal quantum efficiency.
  • silicon-doped first and second spacer layers 33 and 37 are combined with the optimal light emitting region thicknesses and doping levels described above. As illustrated in Table 1 below, the internal quantum efficiency of a thick, optimally silicon-doped light emitting layer may be further boosted by doping to the same doping ranges the spacer layers directly adjacent to the light emitting layer.
  • the spacer layers may be, for example, between about 20 and about 1000 angstroms thick, and are usually about 100 angstroms thick.
  • the data illustrated in FIGS. 2, 4 , and 10 and in Table 1 are for devices with InGaN light emitting layers with 12% InN, which emit light at about 430 nm.
  • Increasing the wavelength of emitted light requires increasing the amount of InN in the light emitting layer.
  • the material quality of the layer deteriorates.
  • devices with more InN in the light emitting layers may require greater dopant concentrations in the light emitting layers, in order to achieve the improvements in efficiency, as illustrated in FIGS. 2, 9A , and 10 .
  • the optimal silicon doping level may be, for example, 1 ⁇ 10 19 cm ⁇ 3 to 5 ⁇ 10 19 cm ⁇ 3 as illustrated in FIG. 9A , instead of 6 ⁇ 10 18 cm ⁇ 3 to 10 19 cm ⁇ 3 as illustrated in FIG. 9B for a device emitting light at 400 nm.
  • first spacer layer 33 light emitting region 35 , and second spacer layer 37 .
  • regions 33 , 35 , and 37 may not be intentionally doped or may be doped to a level below the optimal doping ranges given above.
  • all three of regions 33 , 35 , and 37 may be optimally doped; spacer layer 33 and light emitting region 35 may be optimally doped and spacer layer 37 may not be intentionally doped or may be doped to a level below the optimal range; spacer layer 37 and light emitting region 35 may be optimally doped and spacer layer 33 may not be intentionally doped or may be doped to a level below the optimal range; or both spacer layers 33 and 37 may be optimally doped and light emitting region 35 may not be intentionally doped or may be doped to a level below the optimal range.
  • the internal quantum efficiency of the device may be further improved by including an optional current blocking layer 38 , as illustrated in FIG. 3 .
  • Blocking layer 38 confines current within the light emitting layer, and in some embodiments is an aluminum-containing p-type layer, often p-type AlGaN or p-type AlInGaN.
  • the internal quantum efficiency in a device is a function of the product of the current injection efficiency and the radiative recombination efficiency.
  • the current injection efficiency is the ratio of the amount of current that recombines in the light emitting layer to the amount of current supplied to the device.
  • the radiative recombination efficiency is the ratio of the amount of current that recombines in the light emitting layer and emits light (in contrast to current that recombines in the light emitting layer for example in a crystal defect, and does not emit light) to the total amount of current that recombines in the light emitting layer.
  • FIG. 11 illustrates the injection efficiency and internal quantum efficiency as a function of composition of AlN in blocking layer 38 for devices with In 0.12 Ga 0.88 N and In 0.16 Ga 0.84 N light emitting layers according to embodiments of the invention.
  • the data in FIG. 11 were derived from simulations.
  • the diamonds and squares in FIG. 11 represent the injection efficiency and internal quantum efficiency of a device with an In 0.16 Ga 0.84 N light emitting layer; the triangles and x-marks on FIG.
  • the injection efficiency and internal quantum efficiency of a device with an In 0.12 Ga 0.88 N light emitting layer represent the injection efficiency and internal quantum efficiency of a device with an In 0.12 Ga 0.88 N light emitting layer.
  • the injection efficiency and internal quantum efficiency are both about zero.
  • the injection efficiency jumps to over 50%.
  • the injection efficiency improves.
  • the AlN composition may be at least 15%.
  • FIG. 12 illustrates the internal quantum efficiency as a function of composition of AlN in blocking layer 38 , as observed in actual devices that emit light at 430 nm.
  • the internal quantum efficiency improves to a peak in internal quantum efficiency at an AlN composition of about 20%.
  • the AlN composition in an AlGaN blocking layer is greater than 8% and less than 30%, preferably greater than 15% and less than 25%.
  • the reduction in internal quantum efficiency as the AlN composition increases over 20% may be due to incorporation of contaminants during growth of high AlN composition layers.
  • the AlN compositions described above may be generalized to desirable band gaps for blocking layer 38 , as illustrated below in Table 2.
  • blocking layer may be a layer of any composition with a band gap greater than 3.5 eV. Since the upper limit on AlN composition illustrated in FIG. 12 is likely due to materials problems particular to current growth techniques for AlGaN layers and not due to band gap, the upper limit to the band gap of an AlGaN blocking layer is that of an AlN blocking layer, assuming these material problems are resolved.
  • Blocking layer 38 must be thick enough so charge carriers cannot tunnel through blocking layer 38 , generally greater than 10 ⁇ thick. In some embodiments, blocking layer 38 is between 10 and 1000 ⁇ thick, more preferably between 100 and 500 ⁇ thick. In some embodiments, blocking layer 38 may be part of or the entire p-type region 39 ; for example, blocking layer 38 may be a layer on which an electrical contact to the p-type side of the light emitting layer is formed.
  • the internal quantum efficiency of the device may be further improved by including an optional preparation layer 32 , as illustrated in FIG. 3 .
  • Preparation layer 32 may be a smoothing structure as described in U.S. Pat. No. 6,635,904, “Indium Gallium Nitride Smoothing Structures For III-nitride Devices,” granted Oct. 21, 2003, and incorporated herein by reference.
  • Preparation layer 32 is formed over n-type region 31 .
  • the preparation layer may be an n-type layer located beneath the light emitting layer, within 5000 angstroms of the light emitting layer.
  • the preparation layer can have a thickness ranging from about 200 angstroms to several microns.
  • Preparation layer 32 has a lower indium composition than light emitting region 35 ; for example, preparation layer 32 may be an InGaN layer containing 2-12% InN, and more preferably containing 2-6% InN. In some embodiments, preparation layer 32 may be part of n-type region 31 ; for example, preparation layer 32 may be a layer on which an electrical contact to the n-type side of the light emitting layer is formed.
  • the device of FIG. 1 may also exhibit a peak wavelength that shifts as the current density applied to the device increases.
  • Device designs according to embodiments of the invention may desirably reduce or eliminate the shift in the peak wavelength as the current density increases, as illustrated in Table 3.
  • FIG. 3 Device have 130 angstrom thick light emitting layers doped with Si to a concentration of 1 ⁇ 10 19 cm ⁇ 3 that emit light at a peak wavelength of about 430 nm, 200 angstrom thick GaN first spacer layers doped with Si to a concentration of 1 ⁇ 10 19 cm ⁇ 3 , 100 angstrom thick GaN second spacer layers doped with Si to a concentration of 1 ⁇ 10 19 cm ⁇ 3 , and 210 angstrom thick Al 0.16 Ga 0.84 N blocking layers.
  • TABLE 3 Peak Wavelength Shift for Devices According to Embodiments of the Invention and Devices According to FIG. 1 Wavelength shift, Wavelength Shift, Current Density Change
  • FIG. 3 Device From 20 to 930 A/cm 2 8 nm 3 nm From 20 to 400 A/cm 2 6 nm 2 nm From 20 to 200 A/cm 2 4 nm 1 nm
  • each device includes only a single light emitting layer, some embodiments of the invention include multiple light emitting layers separated by barriers.
  • silicon as the dopant in the light emitting region and surrounding layers
  • other suitable dopants may be used in addition to or instead of silicon, such as other group IV elements such as germanium and tin, group VI elements such as oxygen, selenium, tellurium, and sulfur, group III elements such as aluminum or boron, and p-type dopants such as magnesium.
  • the light emitting layer or spacer layers may be GaN, AlGaN, or AlInGaN, and the devices may emit UV through red light.
  • each doped layer or region (such as the light emitting layer or spacer layers) is uniformly doped, in other embodiments one or more doped layers or regions may be partially doped, or the doping may be graded.
  • the composition of one or more layers described above may be graded.
  • the term “graded” when describing the composition or dopant concentration in a layer or layers in a device is meant to encompass any structure that achieves a change in composition and/or dopant concentration in any manner other than a single step in composition and/or dopant concentration.
  • doping in one or both of the spacer layers is graded.
  • the InN composition in the light emitting layer is graded.
  • Each graded layer may be a stack of sublayers, each of the sublayers having a different dopant concentration or composition than either sublayer adjacent to it. If the sublayers are of resolvable thickness, the graded layer is a step-graded layer. In the limit where the thickness of individual sublayers approaches zero, the graded layer is a continuously-graded region.
  • the sublayers making up each graded layer can be arranged to form a variety of profiles in composition and/or dopant concentration versus thickness, including, but not limited to, linear grades, parabolic grades, and power-law grades. Also, graded layers are not limited to a single grading profile, but may include portions with different grading profiles and one or more portions with substantially constant composition and/or dopant concentration regions.
  • FIGS. 13A-13K illustrate several grading schemes for the light emitting region 35 of FIG. 3 .
  • FIGS. 13A-13K illustrate a portion of the conduction band of energy band diagrams including first spacer 33 , light emitting region 35 , and second spacer layer 37 .
  • first spacer layer 33 is GaN or InGaN with no InN or a low composition of InN.
  • the InN composition is increased and held constant in a first portion of InGaN light emitting layer 35 , then the InN composition is graded to zero or a low composition at the interface with second spacer layer 37 .
  • these local maxima in band gap represent regions with lower InN composition than the surrounding regions of light emitting region 35 .
  • the difference in band gap between these local maxima and the regions of light emitting region 35 surrounding them is small enough that the maxima do not have electronic states, meaning there is no quantum confinement in the regions between them, thus the regions between them are not quantum wells.
  • FIG. 3 may be included in any configuration of a light emitting device.
  • FIGS. 5 and 6 illustrate a flip chip device incorporating the structure of FIG. 3 .
  • FIG. 7 illustrates a thin film device incorporating the structure of FIG. 3 .
  • FIG. 5 is a plan view of a large junction device (i.e. an area greater than or equal to one square millimeter).
  • FIG. 6 is a cross section of the device shown in FIG. 5 , taken along the axis indicated.
  • FIGS. 5 and 6 also illustrate an arrangement of contacts that may be used with the semiconductor structure illustrated in FIG. 3 .
  • the device of FIGS. 5 and 6 is described in more detail in U.S. Pat. No. 6,828,586, which is incorporated herein by this reference.
  • the entire semiconductor structure illustrated in FIG. 3 and described above in various examples is represented on FIG. 6 as epitaxial structure 110 , grown on a growth substrate 10 which remains a part of the finished device.
  • n-type contacts 114 make electrical contact to n-type region 31 of FIG. 3 .
  • P-type contacts 112 are formed on the remaining portions of p-type region 39 of FIG. 3 .
  • the individual n-type contacts 114 formed in the vias are electrically connected by conductive regions 118 .
  • the device may be flipped relative to the orientation illustrated in FIGS. 5 and 6 and mounted on a mount (not shown) contact-side down such that light is extracted from the device through substrate 10 .
  • N-type contacts 114 and conductive regions 118 make electrical contact to the mount by n-type connection region 124 .
  • n-type connection region 124 the p-type contacts 112 are isolated from n-type contacts 114 , conductive regions 118 , and n-type connection region 124 by dielectric 116 .
  • P-type contacts 112 make electrical contact to the mount by p-type connection region 122 .
  • Underneath p-type connection region 122 , n-type contacts 114 and conductive regions 118 are isolated from p-type connection region 122 by dielectric 120 .
  • FIG. 7 is a cross sectional view of a thin film device, a device from which the growth substrate is removed.
  • the device illustrated in FIG. 7 may be formed by growing the semiconductor structure 57 of FIG. 3 on a conventional growth substrate 58 , bonding the device layers to a host substrate 70 , then removing growth substrate 58 .
  • n-type region 31 is grown over substrate 58 .
  • N-type region 31 may include optional preparation layers such as buffer layers or nucleation layers, and optional release layers designed to facilitate release of the growth substrate or thinning of the epitaxial layers after substrate removal.
  • Light emitting region 35 is grown over n-type region 31 , followed by p-type region 39 .
  • Light emitting region 35 may be sandwiched between optional first and second spacer layers 33 and 37 .
  • One or more metal layers 72 including, for example, ohmic contact layers, reflective layers, barrier layers, and bonding layers, are deposited over p-type region 39 .
  • the device layers are then bonded to a host substrate 70 via the exposed surface of metal layers 72 .
  • One or more bonding layers may serve as compliant materials for thermo-compression or eutectic bonding between the epitaxial structure and the host substrate. Examples of suitable bonding layer metals include gold and silver.
  • Host substrate 70 provides mechanical support to the epitaxial layers after the growth substrate is removed, and provides electrical contact to p-type region 39 .
  • Host substrate 70 is generally selected to be electrically conductive (i.e. less than about 0.1 ⁇ cm), to be thermally conductive, to have a coefficient of thermal expansion (CTE) matched to that of the epitaxial layers, and to be flat enough (i.e.
  • Suitable materials include, for example, metals such as Cu, Mo, Cu/Mo, and Cu/W; semiconductors with metal contacts, such as Si with ohmic contacts and GaAs with ohmic contacts including, for example, one or more of Pd, Ge, Ti, Au, Ni, Ag; and ceramics such as AlN, compressed diamond, or diamond layers grown by chemical vapor deposition.
  • the device layers may be bonded to host substrate 70 on a wafer scale, such that an entire wafer of devices are bonded to a wafer of hosts, then the individual devices are diced after bonding.
  • a wafer of devices may be diced into individual devices, then each device bonded to host substrate 70 on a die scale, as described in more detail in U.S. application Ser. No. 10/977,294, “Package-Integrated Thin-Film LED,” filed Oct. 28, 2004, and incorporated herein by reference.
  • Host substrate 70 and semiconductor structure 57 are pressed together at elevated temperature and pressure to form a durable bond at the interface between host substrate 70 and metal layers 72 , for example a durable metal bond formed between metal bonding layers (not shown) at the interface.
  • the temperature and pressure ranges for bonding are limited on the lower end by the strength of the resulting bond, and on the higher end by the stability of the host substrate structure, metallization, and the epitaxial structure. For example, high temperatures and/or high pressures can cause decomposition of the epitaxial layers, delamination of metal contacts, failure of diffusion barriers, or outgassing of the component materials in the epitaxial layers.
  • a suitable temperature range for bonding is, for example, room temperature to about 500° C.
  • a suitable pressure range for bonding is, for example, no pressure applied to about 500 psi. Growth substrate 58 is then removed.
  • portions of the interface between substrate 58 and semiconductor structure 57 are exposed, through substrate 58 , to a high fluence pulsed ultraviolet laser in a step and repeat pattern.
  • the exposed portions may be isolated by trenches etched through the crystal layers of the device, in order to isolate the shock wave caused by exposure to the laser.
  • the photon energy of the laser is above the band gap of the crystal layer adjacent to the sapphire (GaN in some embodiments), thus the pulse energy is effectively converted to thermal energy within the first 100 nm of epitaxial material adjacent to the sapphire.
  • sufficiently high fluence i.e.
  • the resulting structure includes semiconductor structure 57 bonded to host substrate 70 .
  • the growth substrate may be removed by other means, such as etching, lapping, or a combination thereof.
  • semiconductor structure 57 may be thinned, for example to remove portions of n-type region 31 closest to substrate 58 and of low material quality.
  • the epitaxial layers may be thinned by, for example, chemical mechanical polishing, conventional dry etching, or photoelectrochemical etching (PEC).
  • PEC photoelectrochemical etching
  • the top surface of the epitaxial layers may be textured or roughened to increase the amount of light extracted.
  • a contact (not shown) is then formed on the exposed surface of n-type region 31 .
  • the n-contact may be, for example, a grid.
  • the layers beneath the n-contact may be implanted with, for example, hydrogen to prevent light emission from the portion of light emitting region 35 beneath the n-contact.
  • Secondary optics known in the art such as dichroics or polarizers may be applied onto the emitting surface to provide further gains in brightness or conversion efficiency.
  • FIG. 8 is an exploded view of a packaged light emitting device, as described in more detail in U.S. Pat. No. 6,274,924.
  • a heat-sinking slug 100 is placed into an insert-molded leadframe.
  • the insert-molded leadframe is, for example, a filled plastic material 105 molded around a metal frame 106 that provides an electrical path.
  • Slug 100 may include an optional reflector cup 102 .
  • the light emitting device die 104 which may be any of the devices described in the embodiments above, is mounted directly or indirectly via a thermally conducting submount 103 to slug 100 .
  • a cover 108 which may be an optical lens, may be added.

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US11/211,921 US20070045638A1 (en) 2005-08-24 2005-08-24 III-nitride light emitting device with double heterostructure light emitting region
KR1020087006929A KR20080040770A (ko) 2005-08-24 2006-08-16 더블 헤테로 구조 발광 영역을 갖는 ⅲ-질화물 발광 장치
PCT/IB2006/052819 WO2007023419A1 (en) 2005-08-24 2006-08-16 Iii-nitride light-emitting device with double heterostructure light-emitting region
RU2008110934/28A RU2412505C2 (ru) 2005-08-24 2006-08-16 Iii-нитридное светоизлучающее устройство со светоизлучающей областью с двойной гетероструктурой
CN2006800397908A CN101297410B (zh) 2005-08-24 2006-08-16 具有双异质结构发光区域的ⅲ-氮化物发光器件
EP06795665.6A EP1922766B1 (en) 2005-08-24 2006-08-16 Iii-nitride light-emitting device with double heterostructure light-emitting region
BRPI0615190-6A BRPI0615190B1 (pt) 2005-08-24 2006-08-16 Dispositivo de emissão de luz semicondutor
TW095130686A TWI438921B (zh) 2005-08-24 2006-08-21 具有雙異質發光區域之iii族氮化物發光裝置
JP2006256463A JP2007067418A (ja) 2005-08-24 2006-08-24 二重ヘテロ構造の発光領域を有するｉｉｉ族窒化物発光デバイス
US11/682,276 US7880186B2 (en) 2005-08-24 2007-03-05 III-nitride light emitting device with double heterostructure light emitting region
US12/495,464 US8847252B2 (en) 2005-08-24 2009-06-30 III-nitride light emitting device with double heterostructure light emitting region
JP2013039423A JP2013102240A (ja) 2005-08-24 2013-02-28 二重ヘテロ構造の発光領域を有するｉｉｉ族窒化物発光デバイス
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145384A1 (en) * 2005-08-24 2007-06-28 Philips Lumileds Lighting Company, Llc III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region
US20070197004A1 (en) * 2006-02-23 2007-08-23 Armin Dadgar Nitride semiconductor component and process for its production
US20070278506A1 (en) * 2006-05-09 2007-12-06 Tran Anh C Vertical light emitting diode device structure
US20090141502A1 (en) * 2007-11-30 2009-06-04 The Regents Of The University Of California Light output enhanced gallium nitride based thin light emitting diode
US9070805B2 (en) 2011-06-30 2015-06-30 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and method for producing the same
US20170263814A1 (en) * 2016-03-08 2017-09-14 Genesis Photonics Inc. Semiconductor structure
US9912123B2 (en) 2013-08-24 2018-03-06 Nichia Corporation Semiconductor light emitting device
US10147845B2 (en) 2012-11-19 2018-12-04 Genesis Photonics Inc. Semiconductor structure
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
US10381511B2 (en) 2012-11-19 2019-08-13 Genesis Photonics Inc. Nitride semiconductor structure and semiconductor light emitting device including the same
US10468549B2 (en) 2016-09-19 2019-11-05 Genesis Photonics Inc. Semiconductor device containing nitrogen
US10535739B2 (en) * 2017-04-24 2020-01-14 Enkris Semiconductor, Inc Semiconductor structure and method of preparing semiconductor structure
US10734351B2 (en) * 2014-02-04 2020-08-04 Infineon Technologies Ag Chip assembling on adhesion layer or dielectric layer, extending beyond chip, on substrate

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115896B2 (en) * 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
JP4959961B2 (ja) * 2005-07-29 2012-06-27 株式会社ジャパンディスプレイセントラル 有機ｅｌ素子の製造方法
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
TWI423482B (zh) * 2009-05-19 2014-01-11 Lien Shine Lu Fabrication method of cladding gallium nitride light emitting diodes
DE102009023849B4 (de) 2009-06-04 2022-10-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip
US9048385B2 (en) * 2009-06-24 2015-06-02 Nichia Corporation Nitride semiconductor light emitting diode
US8211722B2 (en) * 2009-07-20 2012-07-03 Lu Lien-Shine Flip-chip GaN LED fabrication method
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
CN102630349B (zh) * 2009-09-18 2017-06-13 天空公司 功率发光二极管及利用电流密度操作的方法
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US8299488B2 (en) * 2010-12-16 2012-10-30 King Dragon International Inc. LED chip
DE102011014845B4 (de) 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
US9064980B2 (en) * 2011-08-25 2015-06-23 Palo Alto Research Center Incorporated Devices having removed aluminum nitride sections
RU2503024C2 (ru) * 2012-04-03 2013-12-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Национальный исследовательский Томский государственный университет" (ТГУ) СПОСОБ КОНТРОЛЯ ВНУТРЕННЕГО КВАНТОВОГО ВЫХОДА ПОЛУПРОВОДНИКОВЫХ СВЕТОДИОДНЫХ ГЕТЕРОСТРУКТУР НА ОСНОВЕ GaN
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
CN103904169A (zh) * 2012-12-26 2014-07-02 光达光电设备科技（嘉兴）有限公司 一种led外延结构的生长方法及其设备
DE102013104273A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Anordnung mit säulenartiger Struktur und einer aktiven Zone
US9410664B2 (en) 2013-08-29 2016-08-09 Soraa, Inc. Circadian friendly LED light source
JP5919484B2 (ja) * 2014-05-13 2016-05-18 パナソニックＩｐマネジメント株式会社 窒化物半導体発光ダイオード
US9793248B2 (en) * 2014-11-18 2017-10-17 PlayNitride Inc. Light emitting device
US9985168B1 (en) 2014-11-18 2018-05-29 Cree, Inc. Group III nitride based LED structures including multiple quantum wells with barrier-well unit interface layers
JP6009041B2 (ja) * 2015-06-05 2016-10-19 ローム株式会社 発光素子、発光素子ユニットおよび発光素子パッケージ
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
CN108303567B (zh) * 2018-02-02 2020-04-24 扬州杰利半导体有限公司 一种单片集成的三质量mems电容差分式三轴加速度计的制备方法
US11393948B2 (en) * 2018-08-31 2022-07-19 Creeled, Inc. Group III nitride LED structures with improved electrical performance
US20220294189A1 (en) * 2019-04-04 2022-09-15 Cornell University Monolithically inverted iii-v laser diode realized using buried tunnel junction

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747832A (en) * 1992-11-20 1998-05-05 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
US5959401A (en) * 1996-05-21 1999-09-28 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US20020093020A1 (en) * 2001-01-16 2002-07-18 Edmond John Adam Group III nitride LED with undoped cladding layer (5000.137)
US20020190259A1 (en) * 2001-05-29 2002-12-19 Werner Goetz III-Nitride light emitting devices with low driving voltage
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US20030085409A1 (en) * 2001-11-02 2003-05-08 Yu-Chen Shen Indium gallium nitride separate confinement heterostructure light emitting devices
US6590234B2 (en) * 2000-02-03 2003-07-08 Lg Electronics Inc. Nitride semiconductor light-emitting element and method for fabricating the same
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US20040031437A1 (en) * 1999-06-09 2004-02-19 Seiji Sarayama Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US20040124500A1 (en) * 2001-04-12 2004-07-01 Kimihiro Kawagoe Gallium nitride compound semiconductor element
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
US6914272B2 (en) * 1998-06-05 2005-07-05 Lumileds Lighting U.S., Llc Formation of Ohmic contacts in III-nitride light emitting devices
US7115908B2 (en) * 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
US7122839B2 (en) * 2004-10-29 2006-10-17 Philips Lumileds Lighting Company, Llc Semiconductor light emitting devices with graded composition light emitting layers
US7166869B2 (en) * 1995-11-06 2007-01-23 Nichia Corporation Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
US7285799B2 (en) * 2004-04-21 2007-10-23 Philip Lumileds Lighting Company, Llc Semiconductor light emitting devices including in-plane light emitting layers

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965709B2 (ja) 1990-12-07 1999-10-18 日本電信電話株式会社 半導体発光素子の作製方法
JP2713094B2 (ja) 1993-01-08 1998-02-16 日亜化学工業株式会社 半導体発光素子およびその製造方法
JP2560964B2 (ja) * 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3524681B2 (ja) 1996-06-27 2004-05-10 三菱重工業株式会社 メソポーラスシリケートの調製方法
JP3700283B2 (ja) * 1996-10-02 2005-09-28 昭和電工株式会社 窒化物化合物半導体素子
US6242080B1 (en) 1997-07-09 2001-06-05 Canon Kabushiki Kaisha Zinc oxide thin film and process for producing the film
GB2327145A (en) * 1997-07-10 1999-01-13 Sharp Kk Graded layers in an optoelectronic semiconductor device
RU2186447C2 (ru) 1997-11-28 2002-07-27 Котелянский Иосиф Моисеевич Полупроводниковый прибор
JP4209577B2 (ja) 2000-03-31 2009-01-14 川崎マイクロエレクトロニクス株式会社 ビア形成領域決定方法
WO2002025746A1 (fr) * 2000-09-21 2002-03-28 Sharp Kabushiki Kaisha Element emetteur de lumiere a semiconducteur de nitrure et dispositif optique contenant cet element
RU2175796C1 (ru) 2001-02-23 2001-11-10 Московский государственный институт стали и сплавов (технологический университет) Полупроводниковый светоизлучающий диод с р-n-переходом (варианты)
US6955933B2 (en) * 2001-07-24 2005-10-18 Lumileds Lighting U.S., Llc Light emitting diodes with graded composition active regions
JP3985488B2 (ja) * 2001-10-09 2007-10-03 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
US20030160229A1 (en) 2002-02-25 2003-08-28 Kopin Corporation Efficient light emitting diodes and lasers
US6881983B2 (en) 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6943381B2 (en) 2004-01-30 2005-09-13 Lumileds Lighting U.S., Llc III-nitride light-emitting devices with improved high-current efficiency
US20070045638A1 (en) * 2005-08-24 2007-03-01 Lumileds Lighting U.S., Llc III-nitride light emitting device with double heterostructure light emitting region

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747832A (en) * 1992-11-20 1998-05-05 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US6469323B1 (en) * 1992-11-20 2002-10-22 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US20030006424A1 (en) * 1992-11-20 2003-01-09 Nichia Chemical Industries Ltd. Light-emitting gallium nitride-based compound semiconductor device
US7166869B2 (en) * 1995-11-06 2007-01-23 Nichia Corporation Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
US5959401A (en) * 1996-05-21 1999-09-28 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US6914272B2 (en) * 1998-06-05 2005-07-05 Lumileds Lighting U.S., Llc Formation of Ohmic contacts in III-nitride light emitting devices
US20040031437A1 (en) * 1999-06-09 2004-02-19 Seiji Sarayama Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
US6590234B2 (en) * 2000-02-03 2003-07-08 Lg Electronics Inc. Nitride semiconductor light-emitting element and method for fabricating the same
US20020093020A1 (en) * 2001-01-16 2002-07-18 Edmond John Adam Group III nitride LED with undoped cladding layer (5000.137)
US6635904B2 (en) * 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US20040124500A1 (en) * 2001-04-12 2004-07-01 Kimihiro Kawagoe Gallium nitride compound semiconductor element
US6630692B2 (en) * 2001-05-29 2003-10-07 Lumileds Lighting U.S., Llc III-Nitride light emitting devices with low driving voltage
US20020190259A1 (en) * 2001-05-29 2002-12-19 Werner Goetz III-Nitride light emitting devices with low driving voltage
US6833564B2 (en) * 2001-11-02 2004-12-21 Lumileds Lighting U.S., Llc Indium gallium nitride separate confinement heterostructure light emitting devices
US20030085409A1 (en) * 2001-11-02 2003-05-08 Yu-Chen Shen Indium gallium nitride separate confinement heterostructure light emitting devices
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
US7115908B2 (en) * 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
US7285799B2 (en) * 2004-04-21 2007-10-23 Philip Lumileds Lighting Company, Llc Semiconductor light emitting devices including in-plane light emitting layers
US7122839B2 (en) * 2004-10-29 2006-10-17 Philips Lumileds Lighting Company, Llc Semiconductor light emitting devices with graded composition light emitting layers

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880186B2 (en) * 2005-08-24 2011-02-01 Koninklijke Phllips Electronics N.V. III-nitride light emitting device with double heterostructure light emitting region
US9640724B2 (en) 2005-08-24 2017-05-02 Lumileds Llc III-nitride light emitting device with double heterostructure light emitting region
US20070145384A1 (en) * 2005-08-24 2007-06-28 Philips Lumileds Lighting Company, Llc III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region
US20070197004A1 (en) * 2006-02-23 2007-08-23 Armin Dadgar Nitride semiconductor component and process for its production
US12125938B2 (en) 2006-02-23 2024-10-22 Azur Space Solar Power Gmbh Nitride semiconductor component and process for its production
US9406505B2 (en) * 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
US7615789B2 (en) * 2006-05-09 2009-11-10 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode device structure
US20070278506A1 (en) * 2006-05-09 2007-12-06 Tran Anh C Vertical light emitting diode device structure
WO2009070808A1 (en) * 2007-11-30 2009-06-04 The Regents Of The University Of California Light output enhanced gallium nitride based thin light emitting diode
US20090141502A1 (en) * 2007-11-30 2009-06-04 The Regents Of The University Of California Light output enhanced gallium nitride based thin light emitting diode
US9070805B2 (en) 2011-06-30 2015-06-30 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and method for producing the same
US9530932B2 (en) 2011-06-30 2016-12-27 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and method for producing the same
US10147845B2 (en) 2012-11-19 2018-12-04 Genesis Photonics Inc. Semiconductor structure
US10153394B2 (en) 2012-11-19 2018-12-11 Genesis Photonics Inc. Semiconductor structure
US10381511B2 (en) 2012-11-19 2019-08-13 Genesis Photonics Inc. Nitride semiconductor structure and semiconductor light emitting device including the same
US9912123B2 (en) 2013-08-24 2018-03-06 Nichia Corporation Semiconductor light emitting device
US10734351B2 (en) * 2014-02-04 2020-08-04 Infineon Technologies Ag Chip assembling on adhesion layer or dielectric layer, extending beyond chip, on substrate
US11309277B2 (en) * 2014-02-04 2022-04-19 Infineon Technologies Ag Chip assembling on adhesion layer or dielectric layer, extending beyond chip, on substrate
US10319879B2 (en) * 2016-03-08 2019-06-11 Genesis Photonics Inc. Semiconductor structure
US20170263814A1 (en) * 2016-03-08 2017-09-14 Genesis Photonics Inc. Semiconductor structure
US10468549B2 (en) 2016-09-19 2019-11-05 Genesis Photonics Inc. Semiconductor device containing nitrogen
US10535739B2 (en) * 2017-04-24 2020-01-14 Enkris Semiconductor, Inc Semiconductor structure and method of preparing semiconductor structure

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US9640724B2 (en) 2017-05-02
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RU2008110934A (ru) 2009-09-27
KR20080040770A (ko) 2008-05-08
US8847252B2 (en) 2014-09-30
US20070145384A1 (en) 2007-06-28
CN101297410B (zh) 2010-12-29
BRPI0615190B1 (pt) 2018-08-07
TW200717871A (en) 2007-05-01
US20170117440A9 (en) 2017-04-27
RU2412505C2 (ru) 2011-02-20
TWI438921B (zh) 2014-05-21
BRPI0615190A2 (pt) 2012-01-31
US20090261361A1 (en) 2009-10-22
JP2013102240A (ja) 2013-05-23
EP1922766A1 (en) 2008-05-21
US7880186B2 (en) 2011-02-01
US20160093770A1 (en) 2016-03-31
WO2007023419A1 (en) 2007-03-01
CN101297410A (zh) 2008-10-29

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