US20060236932A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
US20060236932A1
US20060236932A1 US11/201,243 US20124305A US2006236932A1 US 20060236932 A1 US20060236932 A1 US 20060236932A1 US 20124305 A US20124305 A US 20124305A US 2006236932 A1 US2006236932 A1 US 2006236932A1
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US
United States
Prior art keywords
plasma
sample
vacuum chamber
process gas
processing apparatus
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Abandoned
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US11/201,243
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English (en)
Inventor
Kenetsu Yokogawa
Kenji Maeda
Hiroyuki Kobayashi
Masaru Izawa
Tadamitsu Kanekiyo
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Hitachi High Tech Corp
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Individual
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Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KANEKIYO, TADAMITSU, MAEDA, KENJI, IZAWA, MASARU, KOBAYASHI, HIROYUKI, YOKOGAWA, KENETSU
Publication of US20060236932A1 publication Critical patent/US20060236932A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • This invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus capable of preventing the influence of particle.
  • process gas is introduced into a vacuum chamber equipped with an evacuating means.
  • the introduced process gas is turned into plasma by electromagnetic waves.
  • a sample e.g., a workpiece such as a wafer
  • a sample is exposed to the plasma to etch its surface except its masked portion, and thus a desired feature is obtained.
  • An RF voltage different from the plasma generating voltage, is applied to the sample.
  • the RF voltage accelerates ions in the plasma and causes them to impinge on the sample surface, thereby enhancing the etching efficiency and achieving the verticality of processed features.
  • the etching feature and the etching rate are also significantly affected by electrically neutral active species in addition to the above-described impingement of ions.
  • the distribution of impingement of neutral active species on the sample surface is significantly affected by the plasma distribution and the flow of supplied process gas.
  • the gas is fed like a shower from a surface opposed to the sample and the evacuation port of a vacuum pump serving as a gas evacuating means is located directly below the sample mounting electrode.
  • the supplied gas is provided with improved, especially axial, symmetry relative to the sample surface.
  • this method reduces ease of maintenance for the sample mounting electrode and makes it difficult to install a mechanism for driving a sample conveying means used for arbitrarily setting the processing position of the sample.
  • gas is fed like a shower from a surface opposed to the sample and the evacuation port of a vacuum pump serving as a gas evacuating means is located directly below the sample mounting electrode, fine particles accumulated on the lower side face of the sample mounting electrode and on the vacuum chamber wall around the evacuation port are stirred up during plasma generation, which may be attached to the sample surface to cause particle contamination.
  • Japanese Laid-Open Patent Application 2002-184766 discloses a plasma processing apparatus in which a discharge producing electrode placed on the surface opposite to a sample is subjected to a voltage having the same frequency as an RF voltage applied to the sample but being 180° out of phase. That is, the discharge producing electrode is subjected to an RF voltage being 180° out of phase relative to the RF voltage applied to the sample. In other words, during a period when a positive RF voltage is applied to the sample, a negative voltage is applied to the opposite electrode. This prevents the increase of plasma potential and the sputtering of the vacuum chamber wall. In this way, wear out of wall material and particle production from the wall material can be prevented.
  • the invention provides a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample.
  • the invention employs the following configuration.
  • a plasma processing apparatus comprises a vacuum chamber; process gas introducing means for introducing process gas into the vacuum chamber; means, coupled to a first RF power supply, for applying RF energy to the process gas introduced into the vacuum chamber to turn the process gas into plasma; a sample mounting electrode for mounting a sample on an upper surface thereof and holding the sample in the vacuum chamber; evacuation means for evacuating the process gas in the vacuum chamber; and plasma confining means, provided on a peripheral side of the mounting electrode in the vacuum chamber, for inflecting flow of the process gas caused by the evacuation means on a downstream side of a sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
  • the invention can provide a plasma processing apparatus capable of preventing the production of particle and preventing the influence of particle on the sample.
  • FIG. 1 illustrates a plasma processing apparatus according to a first embodiment of the invention.
  • FIG. 2 illustrates more specifically the plasma confining means 7 formed from two annular plates.
  • FIG. 3 illustrates another example of the plasma confining means 7 .
  • FIG. 4 illustrates a plasma processing apparatus according to a second embodiment of the invention.
  • FIG. 5 illustrates more specifically the plasma confining means 19 in FIG. 4 .
  • FIG. 6 illustrates a plasma processing apparatus according to a third embodiment of the invention.
  • FIG. 7 illustrates more specifically the plasma confining means 21 in FIG. 6 .
  • FIG. 1 illustrates a plasma processing apparatus according to a first embodiment of the invention.
  • the plasma processing apparatus comprises a vacuum chamber 2 evacuated by an evacuating means 1 , a sample mounting electrode 4 for mounting a sample 3 in the vacuum chamber 2 , and an upper electrode 6 located on a surface opposite to the sample 3 .
  • a plasma confining means 7 composed of two annular plates is placed between the sample mounting electrode 4 and the inner wall of the vacuum chamber 2 .
  • the sample mounting electrode 4 is also equipped with a vertical driving mechanism 5 capable of driving the mounting means vertically and adjusting the relative distance between the sample 3 and the upper electrode 6 .
  • the upper electrode 6 is equipped with a shower plate 9 for spreading process gas fed from a process gas introducing means 8 and supplying it onto the surface of the sample 3 .
  • Plasma is generated between the sample 3 and the upper electrode 6 by RF energy supplied from a first RF power supply 10 , which is connected to the upper electrode 6 .
  • a power supply having a frequency of 200 MHz is used for the first RF power supply 10 for discharge production.
  • the density distribution of plasma is controlled by magnetic field generated by a magnetic field generating means 11 .
  • a third RF power supply 12 is connected to the sample 3 via the sample mounting electrode 4 .
  • the energy of ions impinging from the plasma on the sample 3 is controlled by an RF voltage applied by the third RF power supply 12 .
  • the shower plate 9 placed on the upper electrode 6 is also supplied with an RF voltage from a second RF power supply 13 that is different from the above-mentioned first RF power supply 10 for discharge production. Based on this, the energy of ions impinging on the shower plate 9 can be controlled independently of discharge production.
  • the third RF power supply 12 for applying RF voltage to the sample 3 and the second RF power supply 13 for applying RF voltage to the shower plate 9 have the same frequency, but are set to be 180° out of phase relative to each other.
  • the RF power applied to the sample 3 and the shower plate 9 has a frequency of 4 MHz.
  • a 200 MHz RF power supply (first RF power supply) is used for the plasma generating power supply.
  • first RF power supply is used for the plasma generating power supply.
  • plasma can be generated in the range of low to high pressures (generally 0.1 to 20 Pa).
  • use of a frequency of 200 MHz, which is a relatively high frequency for parallel plate discharge facilitates achieving a high efficiency of plasma generation, and also facilitates preventing the increase of plasma potential, thereby preventing excessive wearout of members at ground potential such as the vacuum chamber wall due to the sputtering effect.
  • RF voltage having the same frequency (4 MHz) but being 180° out of phase applied to the sample 3 and the shower plate 9 opposed thereto facilitates accelerating and attracting ions from plasma to the surface of the sample and the shower plate, and prevents the increase of plasma potential. This prevents any excessive sputtering effect on members at ground potential such as the vacuum chamber wall.
  • FIG. 2 illustrates more specifically the plasma confining means 7 formed from two annular plates.
  • the plasma confining means 7 comprises two annular plates, i.e., an upper annular plate 15 and a lower annular plate 16 , which are fixed via a support 17 so as to overlap each other.
  • the plasma confining means is configured so that gas flow (arrow 14 ) supplied from the shower plate 9 onto the upper surface of the sample 3 is inflected one or more times to reach the evacuation means 1 . This enables the confining means to capture particles constituting the plasma.
  • the plasma confining means 7 as placed in this way can prevent plasma from diffusing downstream thereof.
  • RF voltage being 180° out of phase applied to the upper electrode 6 and the sample mounting electrode 4 prevents the increase of plasma potential as described above. For this reason, diffusion of plasma downstream of the vacuum chamber can be sufficiently prevented even when the plasma confining means 7 having a relatively large opening as shown in FIGS. 1 and 2 is used. That is, even the plasma confining means 7 having a relatively large opening can shield plasma from spreading to the evacuation means. This implies that the decrease of gas evacuation rate can be minimized. Therefore a process with low pressure and large flow rate can be easily constructed.
  • the sample mounting electrode 4 is equipped with a vertical driving mechanism 5 .
  • the plasma confining means 7 is fixed to the sample mounting electrode 4 . Therefore, when the vertical driving mechanism 5 moves the sample mounting electrode 4 vertically, the plasma confining means 7 is also moved vertically at the same time. According to this structure, for any processing position of the sample 3 , the plasma confining means 7 is always placed at the same position relative to the sample 3 , and thus the diffusion downstream of the vacuum chamber can be effectively prevented. In this embodiment, the relative position of the plasma confining means 7 can be varied by the vertical driving mechanism 5 . It is understood, however, that an equivalent effect is also achieved when the plasma confining means 7 is fixed to a certain position.
  • the plasma confining means 7 in this embodiment is configured to have a conductance for gas flow such that the pressure difference between the upstream side (sample 3 side) and the downstream side (evacuation means 1 side) of the plasma confining means 7 is 1.1 times or more.
  • a labyrinth structure yielding such a conductance can effectively prevent plasma diffusion and also prevent contamination of the sample surface due to stirring up of particle from the lower part of the vacuum chamber. If the pressure difference between the upstream and downstream sides of the plasma confining means 7 is less than 1.1 times, especially the effect of preventing particle from stirring up from the lower part of the vacuum chamber is decreased.
  • gas flow caused by the pressure difference described above creates a push-back effect on particle, which can also effectively reduce the probability of arrival of particle on the sample.
  • FIG. 3 illustrates another example of the plasma confining means 7 .
  • a feature 18 for partially decreasing the conductance for gas flow is attached to a portion of the plasma confining means 7 in its circumferential direction.
  • the evacuation efficiency is higher on the side nearer to the evacuation means 1 (left side in FIG. 1 ). Even if process gas is supplied uniformly via the shower plate 9 , the gas supply on the sample surface may be biased toward the evacuation means 1 side.
  • a feature 18 e.g., an arc-shaped protrusion formed on the lower face of the upper annular plate 15 ) for partially decreasing the conductance for gas flow is attached to the plasma confining means 7 on the evacuation means 1 side. This virtually equalizes the gas evacuation performance in the circumferential direction around the sample mounting electrode 4 , which enables uniform gas-supply onto the surface of the sample 3 .
  • nonuniformity of process gas supply onto the sample surface due to asymmetry of the evacuation structure is avoided by placing a feature 18 for partially decreasing the conductance for gas flow.
  • the overlapping area and gap spacing of two or more plate members of the confining means shown in the embodiment of FIG. 1 can be varied to make a difference in conductance for gas flow along the circumferential direction of the plasma confining means around the sample.
  • the plasma confining means is made of aluminum sprayed with yttria (Y 2 O 3 ) film.
  • yttria Y 2 O 3
  • a similar effect can also be achieved by using any of aluminum, anodized aluminum, aluminum sprayed with ytterbium, stainless steel, silicon, silicon carbide, carbon, aluminum oxide (alumina), quartz, yttria, and ytterbium.
  • a 200 MHz RF power supply is used for generating plasma, and 4 MHz power supplies being 180° out of phase are used for supplying RF power to the shower plate 9 and the sample 3 .
  • a similar effect can also be achieved by using a power supply at 13 to 450 MHz for generating plasma and power supplies at 400 kHz to 14 MHz for supplying RF power to the shower plate and the sample.
  • processing can be done by using power supplies other than those having the same frequency and being 180° out of phase for the shower plate 9 and the sample 3 . It is also the case when only the sample 3 is subjected to RF power.
  • the embodiment can also be adapted to a discharge configuration without magnetic field.
  • the embodiment can also be adapted to inductive coupling processes using electromagnetic waves at 100 kHz to 15 MHz, or magnetic microwave processes using electromagnetic waves at 450 MHz to 2.5 GHz.
  • the power supplies for the shower plate 9 and the sample 3 being 180° out of phase as shown in FIG. 1 effectively prevents the increase of plasma potential and thus can bring out the best performance of the plasma confining means 7 .
  • FIG. 4 illustrates a plasma processing apparatus according to a second embodiment of the invention.
  • FIG. 5 illustrates more specifically the plasma confining means 19 in FIG. 4 .
  • the plasma confining means 19 is formed from a single annular plate through which a plurality of pores 20 are formed.
  • the pores formed through the annular plate constituting the plasma confining means 19 are opened at a certain angle relative to the thickness direction as shown in FIG. 5 .
  • the obliquely opened pores can serve to inflect gas flow one or more times, which has an effect similar to that achieved in the first embodiment shown in FIG. 1 .
  • the aspect ratio (pore depth/pore diameter) of the pore shown in FIG. 5 is 1.5 or more, plasma is effectively shielded and particle is prevented from passing therethrough from the lower part of the vacuum chamber.
  • the aspect ration is less than 1.5, plasma extinction in the pores is insufficient, which results in passing plasma through the pores and diffusing the plasma downstream of the confining means.
  • the diameter of the pore, the number (density in the circumferential direction) of pores, and/or the orientation of the obliquely opened pores can be varied along the circumferential direction to reduce nonuniformity of gas flow supplied onto the surface of the sample 3 due to the evacuation means 1 asymmetrically placed relative to the sample 3 as shown in FIG. 3 .
  • This embodiment is the same as the first embodiment described above except for the configuration of the plasma confining means 19 .
  • the material of the plasma confining means 19 , plasma generating means, and RF voltage applying means for the sample and shower plate are also the same as those in the first embodiment described above.
  • FIG. 6 illustrates a plasma processing apparatus according to a third embodiment of the invention.
  • FIG. 7 illustrates more specifically the plasma confining means 21 in FIG. 6 .
  • the plasma confining means 21 is formed from a single annular plate through which a plurality of slit apertures 22 are formed.
  • the slit apertures 22 formed through the annular plate are opened at a certain angle relative to the thickness direction as shown in FIG. 7 .
  • the obliquely opened slits can serve to inflect gas Flow one or more times, which has an effect similar to that achieved in the first embodiment shown in FIG. 1 .
  • the width of the slit, the number (circumferential density) of slits, and/or the orientation of the obliquely opened slits can be varied along the circumferential direction to reduce nonuniformity of gas flow supplied onto the surface of the sample 3 due to the evacuation means 1 asymmetrically placed relative to the sample 3 in the first embodiment as shown in FIG. 3 .
  • This embodiment is the same as the first embodiment except for the configuration of the plasma confining means.
  • the material of the plasma confining means 21 , plasma generating means, and RF voltage applying means for the sample and shower plate are also the same as those in the first embodiment described above.
  • a plasma confining means is provided on the peripheral side of the mounting electrode in the vacuum chamber.
  • gas flow caused by the evacuation means is inflected one or more times on the downstream side of the sample mounting surface of the mounting electrode to prevent plasma from diffusing downstream of the sample mounting surface.
  • the plasma confining means can thus prevent plasma diffusion into the downstream side (the lower part of the vacuum chamber and the vicinity of the evacuation means) thereof, and can prevent deposition of particle, deterioration of the chamber wall, and stirring up of particles in the lower part of the vacuum chamber and around the evacuation means.
  • asymmetrization of gas flow on the sample surface due to asymmetric placement of the evacuation means relative to the sample can be prevented by adjusting the position of pores or the like provided in the plasma confining means. Furthermore, even if particles are stirred up in the lower part of the vacuum chamber and around the evacuation means, the structure of inflecting gas flow one or more times can serve to significantly reduce the probability of arrival of particles on the sample surface.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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US11/201,243 2005-04-22 2005-08-11 Plasma processing apparatus Abandoned US20060236932A1 (en)

Applications Claiming Priority (2)

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JP2005125227A JP2006303309A (ja) 2005-04-22 2005-04-22 プラズマ処理装置
JP2005-125227 2005-04-22

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