WO2015172549A1 - 反应腔室及半导体加工设备 - Google Patents

反应腔室及半导体加工设备 Download PDF

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Publication number
WO2015172549A1
WO2015172549A1 PCT/CN2014/092368 CN2014092368W WO2015172549A1 WO 2015172549 A1 WO2015172549 A1 WO 2015172549A1 CN 2014092368 W CN2014092368 W CN 2014092368W WO 2015172549 A1 WO2015172549 A1 WO 2015172549A1
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WIPO (PCT)
Prior art keywords
ring
reaction chamber
faraday shield
insulating
peripheral wall
Prior art date
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PCT/CN2014/092368
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English (en)
French (fr)
Inventor
张彦召
佘清
陈鹏
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to KR1020167032641A priority Critical patent/KR101887160B1/ko
Priority to US15/310,047 priority patent/US9978570B2/en
Priority to SG11201608815XA priority patent/SG11201608815XA/en
Publication of WO2015172549A1 publication Critical patent/WO2015172549A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Definitions

  • the invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a reaction chamber and a semiconductor processing device.
  • Magnetron sputtering equipment is a widely used processing equipment, mainly used for the deposition process of workpieces such as substrates.
  • the basic principle of magnetron sputtering is that the reaction gas is excited to form a plasma, and the target in the reaction chamber is bombarded by the plasma to cause particles on the surface of the target to escape and deposit on the workpiece to be processed.
  • it is usually required to deposit a metal layer in a channel, a trench or a via hole having a high aspect ratio on the surface of a workpiece to be processed, and thus it is necessary to increase the concentration of plasma in the reaction chamber. .
  • FIG. 1 and 2A a prior art reaction chamber is shown.
  • An induction coil 11 is disposed around the outer side of the side wall of the reaction chamber 10.
  • the induction coil 11 is electrically connected to the radio frequency power source 12 via the matching unit 13 for generating an alternating magnetic field in the reaction chamber 10, and the energy of the alternating magnetic field is
  • the process gas within the reaction chamber 10 is excited to form a plasma.
  • a metal film is deposited on the inner side wall of the reaction chamber 10 while depositing a metal film on the workpiece S, which is equivalent to arranging a closed metal ring on the inner side wall.
  • a Faraday shield ring 14 of a cylindrical structure is generally disposed in the reaction chamber 10 around the inner side wall of the reaction chamber 10.
  • the Faraday shield ring 14 is made of a non-magnetic material and is provided on the ring surface thereof. A slit (not shown) that extends axially through its annulus so that the Faraday shield ring 14 is non-closed in the circumferential direction.
  • the Faraday shield ring 14 has a cylindrical structure and is not closed in the circumferential direction, specifically, in the Faraday shield ring 14 A slit extending through the Faraday shield ring 14 in the axial direction of the Faraday shield ring 14 is formed on the ring surface, and the slit is provided as a toothed groove 141.
  • the so-called toothed groove 141 means that the groove 141 is perpendicular to
  • the projection in the axial plane of the Faraday shield ring 14 is similar to the shape of the character "Z", that is, the portion of the projection of the groove 141 that faces the inner side of the reaction chamber 10 and the deviation of the groove 141 from the reaction chamber
  • the inner portion of the chamber 10 is similar to the convex teeth.
  • the Faraday shield ring 14 of such a "Z" type toothed groove 141 is also referred to as a "maze groove shaped Faraday shield ring".
  • the use of the non-closed Faraday shield ring 14 not only prevents the formation of a metal film on the inner wall of the reaction chamber 10, but also prevents the Faraday shield ring 14 from forming a conductive path so that the energy of the alternating magnetic field generated by the induction coil 11 is coupled. Inside the reaction chamber 10.
  • a liner 16 is provided in the bottom region within the reaction chamber 10 and surrounding the inner wall of the reaction chamber 10, and the liner 16 is typically made of a metallic material and is grounded.
  • the inner liner 16 is stepped, the upper step surface of the inner liner 16 is a flat surface, and the lower step surface is a groove bottom 161 which is lined with a groove.
  • an insulating ring 17 made of an insulating material such as quartz or ceramic is stacked, and the lower surface of the Faraday shield ring 14 is superposed on the upper surface of the insulating ring 17.
  • the Faraday shield ring 14 is closed at the slit position of the lower surface thereof, and the lower end portion of the Faraday shield ring 14 is stepped, that is, the Faraday shield ring is provided.
  • the inner region of the lower surface of the lower surface of the reaction chamber 10 is formed with a recess 15 recessed toward the upper surface of the Faraday shield ring 14.
  • the above reaction chamber 10 inevitably has the following problem in practical application: when the reaction chamber 10 adopts a top-to-bottom exhaust mode, most of the metal particles move downward in the vertical direction due to the overlapping of the insulating rings 17. Between the Faraday shield ring 14 and the inner liner 16, and the inner peripheral surface, the partial upper surface, and a portion of the lower surface are exposed to the reaction chamber 10, and therefore, the upper surface of the insulating ring 17 is easily formed as the process proceeds. The metal is deposited and causes the Faraday shield ring 14 to close at the seam location of its lower surface, creating a spark at the seam location and affecting the process.
  • the invention aims to solve the technical problems existing in the prior art, and provides a reaction chamber and a semiconductor processing device, which can not only reduce the risk of sparking in the reaction chamber, improve the stability of the process and the quality of the process, but also can reduce Metal particle flaking causes contamination of the reaction chamber, thereby reducing damage to the workpiece being processed.
  • the present invention provides a reaction chamber including a Faraday shield ring made of a non-magnetic material and an insulating ring made of an insulating material, and the Faraday shield ring is opened along the edge. a slit extending axially through the torus thereof, the Faraday shield ring and the insulating ring are disposed around the inner peripheral wall of the reaction chamber in the reaction chamber, and the Faraday shield ring is stacked in a vertical direction Placed on the insulating ring.
  • the inner peripheral wall surrounding the insulating ring is provided with a shielding ring connected to a region on the lower surface of the Faraday shielding ring near the center of the reaction chamber, the shielding ring being made of a material that is not magnetically conductive And a slit opening through the annular surface thereof in the axial direction is opened thereon.
  • the slit on the shadow ring and the slit on the Faraday shield ring coincide in a projection perpendicular to a plane of the central axis of the reaction chamber.
  • the shielding ring is coaxial with the Faraday shielding ring and the inner diameters of the two are equal.
  • the outer peripheral wall of the shielding ring and the inner peripheral wall of the insulating ring have a horizontal interval in a horizontal direction.
  • the horizontal spacing ranges from 1 to 2 mm.
  • an edge region away from the center of the reaction chamber on the lower surface of the Faraday shield ring is provided with a downwardly projecting boss, the boss contacting the upper surface of the insulating ring to shield the Faraday shield A ring is placed on the upper surface of the insulating ring.
  • the upper surface and/or the inner peripheral wall of the insulating ring and/or the inner peripheral wall of the Faraday shield ring and/or the inner peripheral wall of the shielding ring are treated by a roughening treatment process.
  • the reaction chamber provided by the present invention further comprises an inner liner located in a bottom region of the reaction chamber, and disposed around an inner peripheral wall of the reaction chamber, the longitudinal section of the liner being stepped
  • the insulating ring is stacked on the upper step surface of the inner liner.
  • the inner diameter of the shielding ring is larger than the inner diameter of the upper step surface of the inner liner, and the lower surface of the shielding ring is higher than the lower surface of the insulating ring so that the shielding ring is not associated with the inner liner
  • the upper step faces are in contact.
  • the outer diameter of the shielding ring is smaller than the inner diameter of the upper step surface of the inner liner, and the lower surface of the shielding ring is on the same horizontal surface as the lower surface of the insulating ring.
  • the shielding ring is integrally formed with the Faraday shielding ring.
  • the present invention also provides a semiconductor processing apparatus including a reaction chamber, and the reaction chamber may be any one of the above reaction chambers.
  • a vertically downwardly extending shielding ring is disposed at a region of the lower surface of the Faraday shield ring near the center of the reaction chamber, and the shielding ring is also made of a non-magnetic material and thereon.
  • the shielding ring Provided with a slit extending axially through the annular surface thereof, the shielding ring surrounding the inner peripheral wall of the insulating ring, thereby covering the inner peripheral wall of the insulating ring, so that when the metal particles in the reaction chamber move downward, the metal The particles are deposited on the shadow ring, thereby greatly reducing or even avoiding the deposition of metal particles of the insulating ring.
  • the Faraday shield ring and the shadow ring exposed to the reaction chamber is vertical rather than horizontal, most of the metal particles will be vertical when exhausting the reaction chamber from top to bottom.
  • the direction of downward movement that is, the movement direction of most of the metal particles is parallel to the inner peripheral wall of the Faraday shield ring and the shadow ring toward the center of the reaction chamber, thereby causing metal particles to be hardly deposited on the Faraday shield ring and the shadow ring.
  • the Faraday shield ring and the shadow ring can be prevented from closing at the slit position, the risk of sparking is reduced, the stability of the process and the process quality are improved, and the metal particle peeling is reduced to the reaction chamber by reducing the deposition of metal particles. Room building The resulting contamination reduces damage to the workpiece being machined.
  • the semiconductor processing equipment provided by the invention adopts the reaction chamber provided by another technical solution of the invention, which can not only reduce the risk of sparking in the reaction chamber, improve the stability of the process and the quality of the process, but also reduce the reaction of metal particles to peel off.
  • the contamination caused by the chamber can reduce damage to the substrate.
  • Figure 1 is a schematic view showing the structure of a conventional reaction chamber
  • Figure 2A is a partial enlarged view of a region I in Figure 1;
  • 2B is a top plan view of a conventional Faraday shield ring
  • FIG. 3 is a schematic structural view of a reaction chamber according to a first embodiment of the present invention.
  • Figure 4 is a partial enlarged view of the area II in Figure 3;
  • Figure 5 is a schematic structural view of the insulating ring and the Faraday shielding ring of Figure 3;
  • FIG. 6 is a schematic structural view of a reaction chamber according to a second embodiment of the present invention.
  • Figure 7 is a partial enlarged view of a region III in Figure 6;
  • Figure 8 is a schematic view showing the structure of the insulating ring and the Faraday shield ring of Figure 6.
  • the term “thickness of the Faraday shield ring” refers to the wall thickness of the Faraday shield ring in the horizontal direction, that is, the difference between the outer diameter and the inner diameter of the Faraday shield ring;
  • the thickness of the insulation ring refers to the insulation ring at the level The wall thickness in the direction, that is, the difference between the outer diameter and the inner diameter of the insulating ring;
  • the thickness of the upper step surface of the inner liner refers to the width of the upper step surface of the inner liner in the horizontal direction, that is, the upper side of the inner liner The difference between the outer diameter and the inner diameter of the step surface.
  • FIG. 3 is a schematic structural view of a reaction chamber according to a first embodiment of the present invention
  • FIG. 4 is a partial enlarged view of a region II of FIG. 3
  • FIG. 5 is a schematic structural view of the insulating ring and the Faraday shield ring of FIG.
  • the reaction chamber 20 provided in this embodiment includes a Faraday shield ring 21, an insulating ring 22, an induction coil 23, a radio frequency power source 24, a first impedance matching device 25, and a DC power source 27.
  • the Faraday shield ring 21 is made of a material that is not magnetically conductive and surrounds the inner peripheral wall of the reaction chamber 20.
  • the Faraday shield ring 21 is provided with at least one slit (not shown) extending axially through its annulus, that is, the Faraday shield ring 21 has a non-closed cylindrical structure.
  • the width of the slit is smaller than the mean free path of the metal particles in the reaction chamber 20 to prevent metal particles from entering the outer side of the Faraday shield ring 21 from the slit.
  • the width of the slit refers to the slit of the slit in the circumferential direction.
  • the insulating ring 22 is made of an insulating material such as quartz or ceramic, and is disposed in the reaction chamber 20 around the inner peripheral wall of the reaction chamber 20.
  • the Faraday shield ring 21 is stacked on the insulating ring 22 in the vertical direction.
  • a shadow ring 211 is provided around the inner peripheral wall of the insulating ring 22.
  • the shadow ring 211 is connected to a region on the lower surface of the Faraday shield ring 21 near the center of the reaction chamber 20.
  • the shielding ring 211 is made of a non-magnetic material, and is provided with at least one slit extending axially through the annular surface thereof, so that the shielding ring 211 is a non-closed cylindrical structure, thereby avoiding deposition on the shielding ring 211.
  • the metal particles on the inner peripheral wall form a loop.
  • the outer peripheral wall of the shadow ring 211 and the inner peripheral wall of the insulating ring 22 have a horizontal interval D1 in the horizontal direction, so that even if metal particles pass through the slit in the shadow ring 211, This horizontal pitch D1 must be crossed in the horizontal direction to reach and deposit on the inner peripheral wall of the insulating ring 22, thereby further reducing the deposition of metal particles on the inner peripheral wall of the insulating ring 22.
  • the wall thickness of the shadow ring 211 is sufficiently large, for example, the wall thickness is greater than D1, even if there is a metal particle entering the slit of the shadow ring 211, it must pass through D1 in the horizontal direction to reach and deposit to the insulating ring 22. This also reduces the deposition of metal particles on the inner peripheral wall of the insulating ring 22 on the inner peripheral wall.
  • the shielding ring 211 is disposed around the inner peripheral wall of the insulating ring 22 and extends downward from the lower surface of the Faraday shielding ring 21 and covers the inner peripheral wall of the insulating ring 22, thereby covering the inner peripheral wall of the insulating ring 22.
  • the metal particles in the reaction chamber 20 move downward, metal particles are deposited on the shadow ring 211, thereby largely reducing or even preventing the deposition of metal particles on the insulating ring 22.
  • the surface of the Faraday shield ring 21 and the shadow ring 211 exposed to the reaction chamber 10 is a vertical surface rather than a horizontal surface, most of the metal particles are used when exhausting the reaction chamber from top to bottom.
  • the shielding ring 211 is provided to reduce the deposition of metal particles and to prevent the Faraday shield ring 21 from being closed, without the need to provide a recess on the Faraday shield ring to avoid the Faraday shield ring closing as in the prior art. Therefore, in this embodiment, it is not necessary to set the thickness of the Faraday shield ring 21 to be large, that is, the thickness of the Faraday shield ring 14 in the radial direction is not required to be large, so that the inner diameter of the reaction chamber is increased, and the available space is correspondingly Increased to improve process results relative to the prior art.
  • the shadow ring 211 is integrally formed with the Faraday shield ring 21, that is, the two are monolithic structures.
  • the Faraday shield ring 21 and the shadow ring 211 are the same.
  • Magnetic material In practical applications, the shadow ring 211 and the Faraday shield ring 21 may also be of a split structure, which are fixed to each other in use, in which case, whether the Faraday shield ring 21 and the shadow ring 211 are the same non-magnetic. The material is not limited.
  • the slit on the shadow ring 211 and the slit on the Faraday shield ring 21 coincide in a projection perpendicular to the plane of the central axis of the reaction chamber 20, i.e., the slit on the shadow ring 211 and the Faraday
  • the slit on the shield ring 21 penetrates in the vertical direction.
  • neither the slit on the shadow ring 211 nor the slit on the Faraday shield ring 21 can be supported in the horizontal direction into the slit.
  • the plane of the metal particles ie, there is no deposition surface in the horizontal direction). Therefore, the slit on the shadow ring 211 and the slit on the Faraday shield ring 21 penetrate in the vertical direction, which is more advantageous for reducing the deposition of metal particles.
  • the shadow ring 211 is disposed coaxially with the Faraday shield ring 21 and the inner diameters of the two are equal.
  • the inner peripheral walls of the two do not appear to be displaced in the horizontal direction, that is, the deposition surfaces of the metal particles are not formed on the overlapping surfaces of the two. Thereby it is more advantageous to reduce the deposition of metal particles.
  • the horizontal spacing D1 ranges from 1 to 2 mm, which not only reduces the difficulty of machining, but also prevents metal particles deposited on the inner peripheral wall of the insulating ring 22 from being obscured because the horizontal spacing is too small.
  • the slit of the ring 211 is clogged and causes the problem that the shadow ring 211 is closed, so that the risk of sparking can be further reduced, and the stability of the process and the quality of the process can be further improved.
  • the lower surface of the Faraday shield ring 21 is a non-flat surface, that is, the edge region on the lower surface of the Faraday shield ring 21 away from the center of the reaction chamber 10 is opposite.
  • the other regions are shown as downwardly extending bosses 212 that are in contact with the insulating ring 22 to stack the Faraday shield ring 21 on the insulating ring 22.
  • the height of the boss 212 is D2, by which the vertical distance between the lower surface of the Faraday shield ring 21 and the upper surface of the insulating ring 22 is equal to the height D2 in the vertical direction.
  • the lower surface of the Faraday shield ring 21 is not provided with the boss 212 and is a flush plane, the lower surface of the Faraday shield ring 21 is directly stacked on the upper surface of the insulating ring 22, thus being deposited in the insulating ring 22.
  • the metal particles at the upper end of the peripheral wall easily communicate the position where the lower surface of the Faraday shield ring 21 is in contact with the inner peripheral wall of the insulating ring 22, thereby closing the slit of the Faraday shield ring 21 and/or the shadow ring 211.
  • the vertical spacing D2 ranges from about 1 mm.
  • the upper surface and/or the inner peripheral wall of the insulating ring 22 in the present embodiment is preferably roughened by a process such as sandblasting to roughen the upper surface and/or the inner peripheral wall of the insulating ring 22.
  • the rough surface 221 can reduce the stress of the metal thin film deposited thereon, enhance the adsorption force on the metal particles, so that the metal particles are not easily peeled off, and therefore, when the metal particles pass through the horizontal pitch D1 and/or the vertical pitch D2
  • the peeling of the metal particles and the resulting contamination of the reaction chamber 20 can be further reduced by the rough surface 221, thereby further reducing the workpiece to be processed. damage.
  • the inner peripheral wall of the Faraday shield ring 21 and/or the shadow ring 211 is preferably subjected to a roughening process so that the inner peripheral wall of the Faraday shield ring 21 and/or the shadow ring 211 forms a rough surface 221.
  • the inner liner 31 is disposed around the inner peripheral wall of the reaction chamber 20 and is located in the bottom portion of the reaction chamber 20 for shielding the inner wall of the reaction chamber 20 to keep the reaction chamber 20 clean.
  • the inner liner 31 is generally made of a metal material and grounded; the outer diameter of the shadow ring 211 is smaller than the inner diameter of the upper step surface of the inner liner 31.
  • the lower surface of the shadow ring 211 is on the same level as the lower surface of the insulating ring 22, so that the shielding ring 211 completely blocks the insulating ring 22 in the vertical direction, thereby avoiding the metal particles from the lower surface of the shielding ring 211.
  • the lower portion enters the horizontal interval D1 and is deposited on the inner peripheral wall of the insulating ring 22, thereby preventing the metal particles from blocking the slit of the shielding ring 211 and closing the shielding ring 211 in the circumferential direction.
  • the carrier device 34 is disposed in a bottom region inside the reaction chamber 20, and the carrier device 34 is electrically connected to the bias RF power source 29 via the second impedance matching device 30 for providing a negative bias to the carrier device 34 to increase metal particles.
  • the directionality that is, the metal particles in the suction reaction chamber 20 are perpendicularly incident on the upper surface of the workpiece S to be processed, so that even deep-depth through holes or grooves can The metal film was deposited smoothly.
  • the frequency of the bias RF power supply 29 is generally selected to be 13.56 MHz.
  • a quartz ring 32 is disposed between the inner liner groove and the carrier 34.
  • the longitudinal section of the quartz ring 32 is arcuate in shape with its upper end adjacent the center of the chamber and its lower end being remote from the center of the chamber and placed within the liner groove. The position of the quartz ring 32 can be changed between the working position and the non-working position.
  • the quartz ring 32 when the carrying device 34 carries the workpiece S to be processed, the quartz ring 32 is in the working position, and the upper end thereof and the upper surface of the workpiece S to be processed are The edge regions are in contact with each other and the workpiece S is firmly pressed against the carrier device 34; when the carrier device 34 is lowered and in the non-process position, the quartz ring 32 is in a non-working position, and the upper end thereof is not in contact with the carrier device 34, The lower end falls back and supports the bottom of the groove of the liner groove.
  • quartz ring 32 By providing the quartz ring 32, it is possible to prevent the metal particles from diffusing between the carrier 34 and the inner peripheral wall of the reaction chamber 20 through the gap between the inner liner 31 and the carrier 34, thereby preventing the metal particles from causing the inner peripheral wall of the reaction chamber 20. Pollution.
  • a vacuum exhaust system 35 is disposed at the bottom of the reaction chamber 20 for exhausting the reaction chamber 20 from top to bottom to maintain a vacuum environment within the reaction chamber 20 to ensure process stability.
  • the target 26 is made of a metal material, which is disposed at the top of the reaction chamber 20 and electrically connected to a DC power source 27 disposed outside the reaction chamber 20 for exciting the inside of the reaction chamber 20.
  • the process gas forms a plasma.
  • the DC power source 27 supplies a negative bias to the target 26 to cause positive ions in the plasma to be bombarded against the surface of the target 26 by a negative bias, causing metal atoms on the surface of the target 26 to escape and deposit on the workpiece S to be processed.
  • the upper surface is formed with a metal film on the upper surface of the workpiece S to be processed.
  • the magnetron 28 is disposed above the top of the reaction chamber 20 and is rotatable in a horizontal plane about the central axis of the reaction chamber 20.
  • the magnetron 28 is arranged to be rotatable to ensure that the entire target 26 can be bombarded, thereby ensuring the bombardment uniformity and uniformity of use of the target 26, which not only improves the utilization of the target 26, but also The concentration of the plasma is also enhanced by the increased bombardment area of the target 26.
  • the induction coil 23 is sleeved on the outside of the reaction chamber 20, and is electrically connected to the RF power source 24 through the first impedance matching unit 25 for using the process gas in the reaction chamber 20 when the RF power source 24 is turned on.
  • the body excitation forms a plasma, i.e., couples the energy of the off-set power source into the reaction chamber 20, thereby further enhancing the ion concentration of the plasma within the reaction chamber 20.
  • the frequency of the RF power source 24 ranges from 0.1 M to 60 MHz. Preferably, the frequency of the RF power source 24 is 2 MHz.
  • the electromagnetic adjusting device 33 includes one or more sets of electromagnets and is disposed outside the induction coil 23 for adjusting the distribution of plasma in the reaction chamber 20 to improve the quality of the process.
  • the outer diameter of the shielding ring 211 in this embodiment is smaller than the inner diameter of the upper step surface of the inner liner 31, and the lower surface of the shielding ring 211 is on the same horizontal surface as the lower surface of the insulating ring 22;
  • the invention is not limited thereto.
  • the lower surface of the shielding ring 211 may also be higher or lower than the lower surface of the insulating ring 22, and the specific arrangement may be determined according to actual conditions.
  • the quartz ring 32 is disposed directly under the lower surface of the shadow ring 211 in the present embodiment, the lower surface of the shadow ring 211 can no longer extend downward below the lower surface of the insulating ring 22.
  • the lower surface of the shadow ring 211 may be located above the lower surface of the insulating ring 22 or on the same level as the lower surface of the insulating ring 22. .
  • FIG. 6 is a schematic structural view of a reaction chamber according to a second embodiment of the present invention
  • FIG. 7 is a partial enlarged view of a region III in FIG. 6
  • Schematic diagram of the ring and Faraday shield ring Compared with the first embodiment, in the reaction chamber 20 provided in the second embodiment, the thicknesses of the Faraday shield ring 21 and the insulating ring 22 are both thinned, and the thickness of the upper step surface of the inner liner 31 remains unchanged.
  • the inner diameter of the shadow ring 211 is larger than the inner diameter of the upper step surface of the inner liner 31, and the lower surface of the shadow ring 211 and the lower surface of the insulating ring 22 (or the upper step surface of the inner liner 31) are vertical
  • a vertical spacing D3 in the direction (as shown in Figure 8) is about 5 mm.
  • the purpose of setting the vertical spacing D3 is to: if the inner diameter of the shielding ring 211 is larger than the inner diameter of the upper step surface of the inner liner 31, if the lower surface of the shielding ring 211 is still at the same level as the lower surface of the insulating ring 22, Then, when the insulating ring 22 is stacked on the upper step surface of the inner liner 31, the lower surface of the shielding ring 211 is also in contact with the upper stepped surface of the inner liner 31 and the shadow ring 211 is superposed thereon. In this case, since the inner liner 31 is a metal material and metal is deposited on the upper step surface of the inner liner 31 during the process, both of these factors cause the shadow ring 211 to close at its slit.
  • the thickness of the insulating ring 22 and the thickness of the Faraday shield ring 21 in the second embodiment of the present invention may be smaller than the thickness of the step surface on the inner liner 31, that is, the inner peripheral wall of the insulating ring 22 and the inner portion of the Faraday shield ring 21.
  • the orthographic projection of the plane of the peripheral wall on the inner surface of the inner liner 31 falls into the upper stepped surface of the inner liner 31. Therefore, it is only necessary to ensure that the thickness of the insulating ring 22 and the thickness of the Faraday shield ring 21 are smaller than the thickness of the upper step surface of the inner liner 31, and it is not necessary to limit the thickness of the Faraday shield ring 21 in the horizontal direction.
  • the thickness of the Faraday shield ring 21 can be reduced according to the actual situation to increase the inner diameter of the reaction chamber 20 and the available space, thereby improving process uniformity.
  • the thickness of the Faraday shield ring 21 in the reaction chamber provided by the embodiment can be set according to actual conditions, which can improve the flexibility of the Faraday shield ring 21 setting.
  • the lining can be correspondingly reduced.
  • the thickness of the upper step surface of 31 increases the available space of the reaction chamber 20; it is also possible to keep the original thickness of the upper step surface of the inner liner 31 constant so as to make full use of the existing inner liner 31 without renewing The liner 31 is made to avoid increasing process costs.
  • a shadow ring 211 extending vertically downward is disposed at a region of the lower surface of the Faraday shield ring 21 near the center of the reaction chamber 20, and the shadow ring 211 is provided. Also made of a non-magnetic material and provided with a slit extending axially through its annulus, the shielding ring 211 surrounds the inner side wall of the insulating ring 22 so as to be inside the insulating ring 22 The peripheral wall is covered so that when the metal particles in the reaction chamber 20 move downward, metal particles are deposited on the shadow ring 211, thereby largely reducing or even preventing the deposition of metal particles on the insulating ring 22.
  • the surface of the Faraday shield ring 21 and the shadow ring 211 exposed to the reaction chamber 10 is a vertical surface rather than a horizontal surface, most of the metal particles are used when exhausting the reaction chamber from top to bottom. It will move downward in the vertical direction, that is, most of the metal particles move in parallel with the inner peripheral walls of the Faraday shield ring 21 and the shadow ring 211 toward the center of the reaction chamber, thereby causing metal particles to be hardly deposited to the Faraday shield.
  • the ring 21 and the shielding ring 211 are arranged such that the Faraday shielding ring 21 and the shielding ring 211 can be prevented from being closed at the slit position, the risk of sparking is reduced, the stability of the process and the quality of the process are improved, and the metal particles are reduced.
  • the deposition reduces the contamination of the reaction chamber 20 caused by the spalling of the metal particles, thereby reducing the damage to the workpiece to be processed.
  • the outer peripheral wall of the shadow ring 211 and the inner peripheral wall of the insulating ring 22 have a horizontal pitch D1 in the horizontal direction, even if metal particles pass through the slit on the shadow ring 211, they must pass through in the horizontal direction.
  • This horizontal pitch D1 can be reached and deposited on the inner peripheral wall of the insulating ring 22, so that deposition of metal particles on the inner peripheral wall of the insulating ring 22 can be further reduced.
  • the thickness of the Faraday shield ring 21 in the radial direction thereof is reduced, the inner diameter of the reaction chamber 20 and the available space can be increased, so that the uniformity of the process can be further improved.
  • the present invention also provides a semiconductor processing apparatus including a reaction chamber and a magnetron sputtering apparatus.
  • the reaction chamber may adopt the reaction chamber provided by any of the above embodiments.
  • the semiconductor processing apparatus provided in this embodiment adopts the reaction chamber provided by the foregoing embodiments of the present invention, which not only can reduce the risk of sparking in the reaction chamber, improve the stability of the process and the process quality, and can reduce the metal particle peeling off. Contamination caused by the reaction chamber reduces damage to the workpiece being processed. Moreover, it is also possible to increase the inner diameter of the reaction chamber and the available space by reducing the thickness of the Faraday shield ring in its radial direction, thereby improving the uniformity of the process.

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Abstract

一种反应腔室及半导体加工设备，包括采用不导磁的材料制成的法拉第屏蔽环（21）和采用绝缘材料制成的绝缘环（22），在法拉第屏蔽环（21）上开设有沿轴向贯穿其环面的开缝，法拉第屏蔽环（21）和绝缘环（22）均环绕反应腔室的内周壁而设置在反应腔室内，且法拉第屏蔽环（21）沿竖直方向叠置在绝缘环（22）上。其中，环绕绝缘环（22）的内周壁设置有遮蔽环（211），该遮蔽环（211）与法拉第屏蔽环（21）下表面上的靠近反应腔室中心的区域连接，该遮蔽环（211）采用不导磁的材料制成且在其上开设有沿轴向贯穿其环面的开缝。反应腔室及半导体加工设备不仅可以避免降低打火风险，而且可以降低金属粒子剥落对反应腔室造成的污染；另外，可以增大反应腔室的内径和可利用空间。

Description

反应腔室及半导体加工设备 技术领域
本发明属于半导体设备制造技术领域，具体涉及一种反应腔室及半导体加工设备。
背景技术
磁控溅射设备是应用比较广泛的加工设备，主要用于基片等被加工工件的沉积工艺。磁控溅射的基本原理是：将反应气体激发形成等离子体，借助等离子体轰击反应腔室中的靶材，以使靶材表面上的粒子逸出并沉积在被加工工件上。在超大规模集成电路的半导体器件的生产中，通常需要对被加工工件表面上的深宽比高的通道、沟槽或者通孔内沉积金属层，因此需要增大反应腔室内的等离子体的浓度。
请参阅图1和图2A，其中示出一种现有的反应腔室。该反应腔室10的侧壁外侧环绕设置有感应线圈11，感应线圈11经由匹配器13与射频电源12电连接，用以在反应腔室10内产生交变磁场，借助交变磁场的能量将反应腔室10内的工艺气体激发形成等离子体。实际工艺中，在被加工工件S上沉积金属薄膜的同时，在反应腔室10的内侧壁上也会沉积形成金属薄膜，这样相当于在该内侧壁上套置了一个闭合的金属环，这会导致感应线圈11产生的交变磁场在该金属环内产生感应电流，从而屏蔽感应线圈11所产生的交变磁场。为此，通常会在反应腔室10内环绕反应腔室10的内侧壁设置筒状结构的法拉第屏蔽环14，该法拉第屏蔽环14由不导磁材料制成，且在其环面上开设有沿轴向贯穿其环面的开缝(图中未示出)，以使法拉第屏蔽环14在周向上非闭合。
请参阅图2B，其中示出了一种常见的法拉第屏蔽环的俯视图。该法拉第屏蔽环14呈筒状结构且在周向上不闭合，具体地，在法拉第屏蔽环14的 环面上开设有沿法拉第屏蔽环14的轴向贯穿该法拉第屏蔽环14的开缝，该开缝被设置成齿状沟槽141，所谓齿状沟槽141是指该沟槽141在垂直于法拉第屏蔽环14的轴向的平面内的投影呈类似于字符“Z”的形状，即，该沟槽141的投影中的朝向反应腔室10的内侧的部分和该沟槽141的背离反应腔室10的内侧的部分类似于凸出的齿。这种“Z”型齿状沟槽141的法拉第屏蔽环14亦称为“迷宫槽形的法拉第屏蔽环”。采用这种非闭合的法拉第屏蔽环14，既能避免在反应腔室10的内壁沉积形成金属薄膜，又能避免法拉第屏蔽环14形成导电通路而使得感应线圈11产生的交变磁场的能量耦合进反应腔室10内。
另外，在反应腔室10内的底部区域且环绕反应腔室10的内壁设置有内衬16，该内衬16通常采用金属材料制成且接地。该内衬16呈台阶状，内衬16的上台阶面为平面，下台阶面为内衬沟槽的槽底161。在内衬16的上台阶面上叠置有采用石英或者陶瓷等绝缘材料制成的绝缘环17，法拉第屏蔽环14的下表面叠置于绝缘环17的上表面。为避免工艺过程中在绝缘环17的上表面沉积金属而造成法拉第屏蔽环14在其下表面的开缝位置处闭合，将法拉第屏蔽环14的下端部设置成台阶状，即，使法拉第屏蔽环14的下表面的靠近反应腔室10的中心的内侧区域形成朝向法拉第屏蔽环14的上表面凹进的凹部15。并且，为了避免法拉第屏蔽环14的开缝闭合，需要将凹部15在水平方向上的尺寸设置得较大，即，要求法拉第屏蔽环14在其径向上的厚度较大。
上述反应腔室10在实际应用中不可避免地存在以下问题：反应腔室10采用由上至下的排气方式时，大部分金属粒子会沿竖直方向向下运动，由于绝缘环17叠置于法拉第屏蔽环14和内衬16之间，且其内周面、部分上表面和部分下表面均暴露于反应腔室10中，因此，随着工艺的进行很容易在绝缘环17的上表面沉积金属并造成法拉第屏蔽环14在其下表面的开缝位置处闭合，从而在开缝位置处产生打火现象并对工艺产生影响。进一步地，由 于绝缘环17的内周面、部分上表面和部分下表面暴露于反应腔室10中，因此，其上沉积的金属剥落时，容易对反应腔室10造成颗粒污染，由此会对被加工工件S产生严重的破坏。
发明内容
本发明旨在解决现有技术中存在的技术问题，提供了一种反应腔室及半导体加工设备，其不仅可以降低反应腔室内打火的风险，提高工艺的稳定性和工艺质量；而且可以降低金属粒子剥落对反应腔室造成的污染，从而降低对被加工工件的损坏。
为解决上述技术问题，本发明提供了一种反应腔室，其包括采用不导磁的材料制成的法拉第屏蔽环和采用绝缘材料制成的绝缘环，在所述法拉第屏蔽环上开设有沿轴向贯穿其环面的开缝，所述法拉第屏蔽环和所述绝缘环均环绕所述反应腔室的内周壁而设置在所述反应腔室内，且所述法拉第屏蔽环沿竖直方向叠置在所述绝缘环上。其中，环绕所述绝缘环的内周壁设置有遮蔽环，所述遮蔽环与所述法拉第屏蔽环下表面上的靠近反应腔室中心的区域连接，所述遮蔽环采用不导磁的材料制成且在其上开设有沿轴向贯穿其环面的开缝。
其中，所述遮蔽环上的开缝和所述法拉第屏蔽环上的开缝在垂直于反应腔室中心轴的平面内的投影相重合。
其中，所述遮蔽环与所述法拉第屏蔽环同轴设置且二者的内径相等。
其中，所述遮蔽环的外周壁与所述绝缘环的内周壁在水平方向上存在水平间距。
其中，所述水平间距的范围在1～2mm。
其中，在所述法拉第屏蔽环下表面上的远离反应腔室中心的边缘区域设置有向下凸出的凸台，所述凸台与所述绝缘环的上表面接触，以将所述法拉第屏蔽环叠置于所述绝缘环的上表面。
其中，所述绝缘环的上表面和/或内周壁和/或所述法拉第屏蔽环的内周壁和/或所述遮蔽环的内周壁采用粗糙化处理工艺处理。
其中，本发明提供的反应腔室还包括内衬，所述内衬位于所述反应腔室内的底部区域，且环绕所述反应腔室的内周壁设置，所述内衬的纵断面呈台阶状，所述绝缘环叠置在所述内衬的上台阶面上。
其中，所述遮蔽环的内径大于所述内衬的上台阶面的内径，所述遮蔽环的下表面高于所述绝缘环的下表面，以使所述遮蔽环不与所述内衬的上台阶面相接触。
其中，所述遮蔽环的外径小于所述内衬的上台阶面的内径，所述遮蔽环的下表面与所述绝缘环的下表面在同一水平面上。
其中，所述遮蔽环与所述法拉第屏蔽环一体成型。
作为另一个方案，本发明还提供一种半导体加工设备，其包括反应腔室，并且该反应腔室可为上述任意一种反应腔室。
本发明具有下述有益效果：
本发明提供的反应腔室中，在法拉第屏蔽环的下表面的靠近反应腔室中心的区域处设置有竖直向下延伸的遮蔽环，该遮蔽环同样采用不导磁材料制成且其上设置有沿轴向贯穿其环面的开缝，该遮蔽环环绕在绝缘环的内周壁的内侧，从而对绝缘环的内周壁进行遮盖，这样，反应腔室内的金属粒子向下运动时，金属粒子会沉积在遮蔽环上，从而在很大程度上减少甚至避免绝缘环的金属粒子的沉积。而且，由于法拉第屏蔽环和遮蔽环上的暴露于反应腔室内的表面为竖直面，而非水平面，因此在对反应腔室由上至下的排气时，大部分金属粒子会沿竖直方向向下运动，也就是说，大部分金属粒子的运动方向与法拉第屏蔽环和遮蔽环的朝向反应腔室中心的内周壁相平行，从而导致金属粒子不易沉积到法拉第屏蔽环和遮蔽环上，这样，既可以避免法拉第屏蔽环和遮蔽环在开缝位置处闭合，降低打火的风险，提高工艺的稳定性和工艺质量；又因减少了金属粒子的沉积而降低了金属粒子剥落对反应腔室造 成的污染，进而降低了对被加工工件的损坏。
本发明提供的半导体加工设备，其采用本发明另一技术方案提供的反应腔室，不仅可以降低反应腔室内打火的风险，提高工艺的稳定性和工艺质量；而且可以降低金属粒子剥落对反应腔室造成的污染，从而可以降低对基片的损坏。
附图说明
图1为现有的反应腔室的结构示意图；
图2A为图1中区域I的局部放大图；
图2B为一种常见的法拉第屏蔽环的俯视图；
图3为本发明第一实施例提供的反应腔室的结构示意图；
图4为图3中区域II的局部放大图；
图5为图3中绝缘环和法拉第屏蔽环的结构示意图；
图6为本发明第二实施例提供的反应腔室的结构示意图；
图7为图6中区域III的局部放大图；以及
图8为图6中绝缘环和法拉第屏蔽环的结构示意图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图对本发明提供的反应腔室及半导体加工设备进行详细描述。所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的组件或具有相同或类似功能的组件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“上”、“下”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或组件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。 此外，术语“法拉第屏蔽环的厚度”指的是法拉第屏蔽环在水平方向上的壁厚，即，法拉第屏蔽环的外径和内径之差；“绝缘环的厚度”指的是绝缘环在水平方向上的壁厚，即，绝缘环的外径和内径之差；“内衬的上台阶面的厚度”指的是内衬的上台阶面在水平方向上的宽度，即，内衬的上台阶面的外径和内径之差。
图3为本发明第一实施例提供的反应腔室的结构示意图；图4为图3中区域II的局部放大图；图5为图3中绝缘环和法拉第屏蔽环的结构示意图。请一并参阅图3、图4和图5，本实施例提供的反应腔室20包括法拉第屏蔽环21、绝缘环22、感应线圈23、射频电源24、第一阻抗匹配器25、直流电源27、磁控管28、偏压射频电源29、第二阻抗匹配器30、内衬31、石英环32、电磁调节装置33、承载装置34和真空排气系统35。
其中，法拉第屏蔽环21采用不导磁的材料制成且环绕反应腔室20的内周壁而设置。在法拉第屏蔽环21上开设有至少一个沿轴向贯穿其环面的开缝(图中未示出)，即，法拉第屏蔽环21呈非闭合的筒状结构。优选地，开缝的宽度小于反应腔室20内的金属粒子的平均自由程，以避免金属粒子自该开缝进入法拉第屏蔽环21的外侧。所谓开缝的宽度，指的是在周向方向上该开缝的缝隙。
绝缘环22采用诸如石英或者陶瓷等的绝缘材料制成，且环绕反应腔室20的内周壁而设置在反应腔室20内。法拉第屏蔽环21沿竖直方向叠置在绝缘环22上。
环绕绝缘环22的内周壁设置有2遮蔽环211。遮蔽环211与法拉第屏蔽环21下表面上的靠近反应腔室20中心的区域连接。遮蔽环211采用不导磁的材料制成，其上开设有沿轴向贯穿其环面的至少一个开缝，以使遮蔽环211为非闭合的筒状结构，从而避免沉积在遮蔽环211的内周壁上的金属粒子形成环路。并且，遮蔽环211的外周壁与绝缘环22的内周壁在水平方向上存在水平间距D1，这样，即使有金属粒子穿过遮蔽环211上的开缝，也 必须在水平方向上穿越该水平间距D1才能到达并沉积到绝缘环22的内周壁上，从而进一步减少金属粒子在绝缘环22的内周壁上的沉积。当然，若遮蔽环211的壁厚足够大，例如其壁厚大于D1，那么即使有金属粒子进入遮蔽环211上的开缝，也必须在水平方向上穿越D1才能到达并沉积到绝缘环22的内周壁上，这样也能减少金属粒子在绝缘环22的内周壁上的沉积。
由上可知，遮蔽环211环绕设置在绝缘环22的内周壁的内侧，并自法拉第屏蔽环21的下表面向下延伸并覆盖绝缘环22的内周壁，从而对绝缘环22的内周壁进行遮盖，这样，反应腔室20内的金属粒子向下运动时，金属粒子会沉积在遮蔽环211上，从而在很大程度上减少甚至避免绝缘环22上的金属粒子的沉积。而且，由于法拉第屏蔽环21和遮蔽环211上的暴露于反应腔室10内的表面为竖直面，而非水平面，因此在对反应腔室由上至下的排气时，大部分金属粒子会沿竖直方向向下运动，也就是说，大部分金属粒子的运动方向与法拉第屏蔽环21和遮蔽环211的朝向反应腔室内的工艺环境的内周壁相平行，从而导致金属粒子不易沉积到法拉第屏蔽环21和遮蔽环211上，这样，一则可以避免法拉第屏蔽环21和遮蔽环211在开缝位置处闭合，降低打火的风险，从而可以提高工艺的稳定性和工艺质量；二则因减少了金属粒子的沉积而降低了金属粒子剥落对反应腔室20造成的污染，从而可以降低对诸如基片等被加工工件的损坏。
进一步地，本实施例中通过设置遮蔽环211来减少金属粒子的沉积并避免法拉第屏蔽环21闭合，而无需像现有技术那样，通过在法拉第屏蔽环上设置凹部来避免法拉第屏蔽环闭合。因此，本实施例中无需将法拉第屏蔽环21的厚度设置得较大，即，无需要求法拉第屏蔽环14在其径向上的厚度较大，因此反应腔室的内径增大，可利用空间也相应增大，从而相对于现有技术改善了工艺结果。
在本实施例中，遮蔽环211与法拉第屏蔽环21一体成型，即，二者为整体式结构，在这种情况下，法拉第屏蔽环21和遮蔽环211采用相同的不 导磁材料。在实际应用中，遮蔽环211和法拉第屏蔽环21也可以为分体式结构，在使用时二者相互固定，在这种情况下，对法拉第屏蔽环21和遮蔽环211是否采用相同的不导磁材料不做限定。
优选地，使遮蔽环211上的开缝和法拉第屏蔽环21上的开缝在垂直于反应腔室20的中心轴的平面内的投影相重合，即，使遮蔽环211上的开缝和法拉第屏蔽环21上的开缝在竖直方向上贯通。这样，当二者叠置在一起时，无论是对遮蔽环211上的开缝而言，还是法拉第屏蔽环21上的开缝而言，均没有能够在水平方向上承托进入该开缝的金属粒子的平面(即，没有水平方向上的沉积面)。因此，遮蔽环211上的开缝和法拉第屏蔽环21上的开缝在竖直方向上贯通，更有利于减少金属粒子的沉积。
优选地，使遮蔽环211与法拉第屏蔽环21同轴设置且使二者的内径相等。这样，当遮蔽环211和法拉第屏蔽环21叠置在一起时，二者的内周壁不会出现在水平方向上的错位，即，二者的叠置面上不会形成金属粒子的沉积面，从而更有利于减少金属粒子的沉积。
优选地，水平间距D1的取值范围在1～2mm，这不仅可以降低机械加工的难度；而且，可以避免出现因水平间距过小而造成沉积在绝缘环22的内周壁上的金属粒子将遮蔽环211的开缝堵塞并导致遮蔽环211闭合的问题，从而可以进一步降低打火风险，并进一步提高工艺的稳定性和工艺质量。
在本实施例中，请参阅图5，优选地，法拉第屏蔽环21的下表面为非平齐的表面，即，法拉第屏蔽环21的下表面上的远离反应腔室10的中心的边缘区域相对于其他区域呈现为向下延伸的凸台212，该凸台212与绝缘环22相接触，以便将法拉第屏蔽环21叠置于绝缘环22上。该凸台212的高度为D2，借助于该凸台212而使法拉第屏蔽环21的下表面与绝缘环22的上表面之间在竖直方向上存在着与高度D2相等的竖直间距。可以理解，当法拉第屏蔽环21的下表面未设置凸台212而为一个平齐平面时，法拉第屏蔽环21下表面直接叠置在绝缘环22的上表面，这样，沉积在绝缘环22内 周壁上端的金属粒子容易将法拉第屏蔽环21的下表面与绝缘环22内周壁相接触的位置连通，从而使法拉第屏蔽环21和/或遮蔽环211的开缝闭合。因此，在法拉第屏蔽环21的下表面设置凸台212，可以进一步避免法拉第屏蔽环21和/或遮蔽环211的开缝闭合，进一步降低打火风险，并进一步提高工艺的稳定性和工艺质量。实际应用中，竖直间距D2的范围在1mm左右。
请参阅图5，本实施例中的绝缘环22的上表面和/或内周壁优选地采用诸如喷砂等工艺进行粗糙化处理，以使绝缘环22的上表面和/或内周壁形成粗糙的表面221。该粗糙的表面221可以减小沉积在其上的金属薄膜的应力，增强对金属粒子的吸附力，使得金属粒子不易脱落，因此，当金属粒子穿过水平间距D1和/或竖直间距D2而沉积在绝缘环22的内周壁和/或上表面时，借助粗糙的表面221可以进一步减少金属粒子的剥落及由此所造成的对反应腔室20的污染，进而可以进一步降低对被加工工件的损坏。类似地，法拉第屏蔽环21和/或遮蔽环211的内周壁优选地进行粗糙化工艺处理，以使法拉第屏蔽环21和/或遮蔽环211的内周壁形成粗糙的表面221。
请参阅图3和图4，内衬31环绕反应腔室20的内周壁设置，且位于反应腔室20内的底部区域，用以遮挡反应腔室20的内壁，以保持反应腔室20的清洁。内衬31一般采用金属材料制成且接地；遮蔽环211的外径小于内衬31的上台阶面的内径。优选地，遮蔽环211的下表面与绝缘环22的下表面在同一水平面上，以使遮蔽环211在竖直方向上将绝缘环22完全遮挡，从而避免金属粒子自遮蔽环211的下表面的下方进入水平间距D1内并沉积在绝缘环22的内周壁上，进而避免金属粒子将遮蔽环211的开缝堵塞而使遮蔽环211在周向上闭合。
承载装置34设置在反应腔室20内部的底部区域，且承载装置34经由第二阻抗匹配器30与偏压射频电源29电连接，用以给承载装置34提供负偏压，以增加金属粒子的方向性，即，吸引反应腔室20内的金属粒子垂直入射到被加工工件S的上表面，这样，即使是深度较深的通孔或者沟槽也能 被顺利沉积金属薄膜。其中，偏压射频电源29的频率一般选用13.56MHz。
为了更有效地遮挡反应腔室20的内壁，在内衬沟槽和承载装置34之间设置石英环32。该石英环32的纵断面的形状呈弧状，且其上端靠近腔室中心，其下端远离腔室中心且置于内衬沟槽内。该石英环32的位置可在工作位和非工作位间变换，具体地，当承载装置34承载被加工工件S进行工艺时，石英环32处于工作位，其上端与被加工工件S上表面的边缘区域相接触并将该被加工工件S稳固地压置于承载装置34上；当承载装置34下降并处于非工艺位置时，石英环32处于非工作位，其上端不接触承载装置34，其下端回落并支撑在内衬沟槽的槽底。通过设置石英环32，可以防止金属粒子通过内衬31与承载装置34之间的间隙扩散至承载装置34与反应腔室20内周壁之间，进而防止金属粒子对反应腔室20的内周壁造成污染。
真空排气系统35设置在反应腔室20的底部，用以由上至下对反应腔室20进行排气，以保持反应腔室20内的真空环境，保证工艺的稳定性。
本实施例中，靶材26采用金属材料制成，其设置在反应腔室20的顶部，且与设置在反应腔室20的外部的直流电源27电连接，用以激发反应腔室20内的工艺气体形成等离子体。直流电源27向靶材26提供负偏压，以使等离子体中的正离子受负偏压的吸引轰击靶材26的表面，使靶材26表面的金属原子逸出并沉积在被加工工件S的上表面，以在被加工工件S上表面形成金属薄膜。
磁控管28设置在反应腔室20的顶部的上方，且能围绕反应腔室20的中心轴而在水平平面内旋转。将磁控管28设置成可旋转的，可以保证整个靶材26都能被轰击到，从而保证靶材26的被轰击均匀性和使用均匀性，这不仅可以提高靶材26的利用率，而且还因靶材26的轰击面积增大而增强等离子体的浓度。
感应线圈23套置在反应腔室20的外侧，且通过第一阻抗匹配器25与射频电源24电连接，用以在射频电源24开启时将反应腔室20内的工艺气 体激发形成等离子体，即，将射偏电源的能量耦合到反应腔室20内，以此进一步增强反应腔室20内的等离子体的离子浓度。射频电源24的频率范围在0.1M～60MHz，优选地，射频电源24的频率为2MHz。
电磁调节装置33包括一组或者多组电磁铁，且设置在感应线圈23的外侧，用以调节反应腔室20内的等离子体的分布，以提高工艺质量。
需要说明的是，尽管本实施例中的遮蔽环211的外径小于内衬31的上台阶面的内径，且遮蔽环211的下表面与绝缘环22的下表面在同一水平面上；但是，本发明并不局限于此，在实际应用中，遮蔽环211的下表面也可以高于或者低于绝缘环22的下表面，具体设置方式可根据实际情况而定。例如，由于本实施例中的遮蔽环211下表面的正下方设置有石英环32，因此，遮蔽环211的下表面不能再向下延伸至绝缘环22下表面的下方。也就是说，在遮蔽环211下表面的正下方设置有石英环32的情况下，遮蔽环211的下表面可以位于绝缘环22的下表面的上方或者与绝缘环22的下表面在同一水平面上。
请一并参阅图6至图8，其中，图6为本发明第二实施例提供的反应腔室的结构示意图；图7为图6中区域III的局部放大图；图8为图6中绝缘环和法拉第屏蔽环的结构示意图。相比于第一实施例，在第二实施例提供的反应腔室20中，法拉第屏蔽环21和绝缘环22的厚度均减薄，而内衬31的上台阶面的厚度则保持不变，在这种情况下，遮蔽环211的内径大于内衬31的上台阶面的内径，并且遮蔽环211的下表面与绝缘环22的下表面(或者，内衬31的上台阶面)在竖直方向上存在竖直间距D3(如图8所示)，用以确保遮蔽环211与内衬31不相接触。其中，竖直间距D3约为5mm。
设置竖直间距D3的目的在于：在遮蔽环211的内径大于内衬31的上台阶面的内径的情况下，若使遮蔽环211的下表面与绝缘环22的下表面仍然处于同一水平面上，则当绝缘环22叠置在内衬31的上台阶面时，遮蔽环211的下表面也会与内衬31的上台阶面相接触并使遮蔽环211叠置于其上， 这种情况下，由于内衬31为金属材料且工艺过程中会在内衬31的上台阶面沉积金属，这两个因素均会导致遮蔽环211在其开缝处闭合。因此，在这种情况下，为避免遮蔽环211在其开缝处闭合，就需使遮蔽环211的下表面高于绝缘环22的下表面，且使二者在竖直方向上相距D3。由于存在竖直间距D3，遮蔽环211与内衬31不相接触，这种情况下，即使随着工艺的进行在内衬31的上台阶面上沉积了金属粒子，也不会导致遮蔽环211在其开缝处闭合，何况内衬31还会经常清洗和更换。因此，这样设计的反应腔室20能够满足工艺要求。
可以理解，由于本发明第二实施例中的绝缘环22的厚度和法拉第屏蔽环21的厚度均可小于内衬31上台阶面的厚度，即绝缘环22的内周壁和法拉第屏蔽环21的内周壁在内衬31上台阶面所在平面的正投影均落在内衬31的上台阶面中。因此，只要保证绝缘环22的厚度和法拉第屏蔽环21的厚度均小于内衬31的上台阶面的厚度即可，而不必限制法拉第屏蔽环21在水平方向上的厚度。换言之，可以根据实际情况减小法拉第屏蔽环21的厚度，以增大反应腔室20的内径和可利用空间，进而可以提高工艺均匀性。此外，本实施例提供的反应腔室中的法拉第屏蔽环21的厚度可根据实际情况而设置，这可提高法拉第屏蔽环21设置的灵活性。
需要说明的是，在本发明第二实施例提供的反应腔室中，在法拉第屏蔽环21和绝缘环22的厚度相较于第一实施例变小的情况下，可以相应地减小内衬31的上台阶面的厚度，以增大反应腔室20的可利用空间；也可以保持内衬31的上台阶面的原有厚度不变，以便充分利用现有的内衬31，而无需重新制作内衬31，从而避免增加工艺成本。
综上所述，本发明实施例提供的反应腔室中，在法拉第屏蔽环21的下表面的靠近反应腔室20中心的区域处设置有竖直向下延伸的遮蔽环211，该遮蔽环211同样采用不导磁材料制成且其上设置有沿轴向贯穿其环面的开缝，该遮蔽环211环绕在绝缘环22的内周壁的内侧，从而对绝缘环22的内 周壁进行遮盖，这样，反应腔室20内的金属粒子向下运动时，金属粒子会沉积在遮蔽环211上，从而在很大程度上减少甚至避免绝缘环22上的金属粒子的沉积。而且，由于法拉第屏蔽环21和遮蔽环211上的暴露于反应腔室10内的表面为竖直面，而非水平面，因此在对反应腔室由上至下的排气时，大部分金属粒子会沿竖直方向向下运动，也就是说，大部分金属粒子的运动方向与法拉第屏蔽环21和遮蔽环211的朝向反应腔室中心的内周壁相平行，从而导致金属粒子不易沉积到法拉第屏蔽环21和遮蔽环211上，这样，既可以避免法拉第屏蔽环21和遮蔽环211在开缝位置处闭合，降低打火的风险，提高工艺的稳定性和工艺质量；又因减少了金属粒子的沉积而降低了金属粒子剥落对反应腔室20造成的污染，进而降低了对被加工工件的损坏。
进一步地，在遮蔽环211的外周壁与绝缘环22的内周壁在水平方向上存在水平间距D1的情况下，即使有金属粒子穿过遮蔽环211上的开缝，也必须在水平方向上穿越该水平间距D1才能到达并沉积到绝缘环22的内周壁上，因此可以进一步减少金属粒子在绝缘环22内周壁上的沉积。并且，在减小法拉第屏蔽环21在其径向上的厚度的情况下，可以增大反应腔室20的内径和可利用空间，从而可以进一步提高工艺的均匀性。
作为另外一个技术方案，本发明还提供一种半导体加工设备，其包括反应腔室和磁控溅射设备。其中，反应腔室可以采用上述任意实施例提供的反应腔室。
本实施例提供的半导体加工设备，其采用本发明前述实施例提供的反应腔室，不仅可以降低反应腔室内打火的风险，提高工艺的稳定性和工艺质量；而且，可以降低金属粒子剥落对反应腔室造成的污染，降低对被加工工件的损坏。并且，还可以通过减小法拉第屏蔽环在其径向上的厚度，来增大反应腔室的内径和可利用空间，从而提高工艺的均匀性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示 例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的原理和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种反应腔室，包括采用不导磁的材料制成的法拉第屏蔽环和采用绝缘材料制成的绝缘环，在所述法拉第屏蔽环上开设有沿轴向贯穿其环面的开缝，所述法拉第屏蔽环和所述绝缘环均环绕所述反应腔室的内周壁而设置在所述反应腔室内，且所述法拉第屏蔽环沿竖直方向叠置在所述绝缘环上，其特征在于，环绕所述绝缘环的内周壁设置有遮蔽环，所述遮蔽环与所述法拉第屏蔽环下表面上的靠近反应腔室中心的区域连接，所述遮蔽环采用不导磁的材料制成且在其上开设有沿轴向贯穿其环面的开缝。
  2. 根据权利要求1所述的反应腔室，其特征在于，所述遮蔽环上的开缝和所述法拉第屏蔽环上的开缝在垂直于反应腔室中心轴的平面内的投影相重合。
  3. 根据权利要求1或2所述的反应腔室，其特征在于，所述遮蔽环与所述法拉第屏蔽环同轴设置且二者的内径相等。
  4. 根据权利要求1所述的反应腔室，其特征在于，所述遮蔽环的外周壁与所述绝缘环的内周壁在水平方向上存在水平间距。
  5. 根据权利要求4所述的反应腔室，其特征在于，所述水平间距的范围在1～2mm。
  6. 根据权利要求1所述的反应腔室，其特征在于，在所述法拉第屏蔽环下表面上的远离反应腔室中心的边缘区域设置有向下凸出的凸台，所述凸台与所述绝缘环的上表面接触，以将所述法拉第屏蔽环叠置于所述绝缘环的上表面。
  7. 根据权利要求1所述的反应腔室，其特征在于，所述绝缘环的上表面和/或内周壁和/或所述法拉第屏蔽环的内周壁和/或所述遮蔽环的内周壁采用粗糙化处理工艺处理。
  8. 根据权利要求1所述的反应腔室，其特征在于，还包括内衬，所述内衬位于所述反应腔室内的底部区域，且环绕所述反应腔室的内周壁设置，所述内衬的纵断面呈台阶状，所述绝缘环叠置在所述内衬的上台阶面上。
  9. 根据权利要求8所述的反应腔室，其特征在于，所述遮蔽环的内径大于所述内衬的上台阶面的内径，所述遮蔽环的下表面高于所述绝缘环的下表面，以使所述遮蔽环不与所述内衬的上台阶面相接触。
  10. 根据权利要求8所述的反应腔室，其特征在于，所述遮蔽环的外径小于所述内衬的上台阶面的内径，所述遮蔽环的下表面与所述绝缘环的下表面在同一水平面上。
  11. 根据权利要求1所述的反应腔室，其特征在于，所述遮蔽环与所述法拉第屏蔽环一体成型。
  12. 一种半导体加工设备，包括反应腔室，其特征在于，所述反应腔室采用权利要求1-11任意一项所述的反应腔室。
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