US20060214115A1 - Phosphor film, imaging assembly and inspection method - Google Patents

Phosphor film, imaging assembly and inspection method Download PDF

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US20060214115A1
US20060214115A1 US11/088,039 US8803905A US2006214115A1 US 20060214115 A1 US20060214115 A1 US 20060214115A1 US 8803905 A US8803905 A US 8803905A US 2006214115 A1 US2006214115 A1 US 2006214115A1
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Prior art keywords
free
phosphor film
standing
phosphor
film
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US11/088,039
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Inventor
Venkatesan Manivannan
Clifford Bueno
Steven Duclos
Stanley Stoklosa
Douglas Albagli
Paul Mc Connelee
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General Electric Co
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General Electric Co
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Priority to US11/088,039 priority Critical patent/US20060214115A1/en
Assigned to GENERAL ELECTRIC COMPANY reassignment GENERAL ELECTRIC COMPANY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BUENO, CLIFFORD, ALBAGLI, DOUGLAS, DUCLOS, STEVEN JUDE, MANIVANNAN, VENKATESAN, MC CONNELEE, PAUL ALAN, STOKLOSA, STANLEY JOHN
Priority to DE602006008682T priority patent/DE602006008682D1/de
Priority to EP06251230A priority patent/EP1705478B1/fr
Priority to JP2006063558A priority patent/JP5450920B2/ja
Priority to CNA2006100718898A priority patent/CN1837954A/zh
Priority to CN2012104255091A priority patent/CN102915785A/zh
Publication of US20060214115A1 publication Critical patent/US20060214115A1/en
Priority to US11/846,990 priority patent/US7547895B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/674—Halogenides
    • C09K11/675—Halogenides with alkali or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
    • C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
    • C09K11/681—Chalcogenides
    • C09K11/684—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7701—Chalogenides
    • C09K11/7703—Chalogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7732—Halogenides
    • C09K11/7733—Halogenides with alkali or alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C09K11/7769—Oxides
    • C09K11/7771—Oxysulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • C09K11/7789—Oxysulfides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens

Definitions

  • the invention relates generally to an imaging assembly and inspection method. More particularly, the invention relates to a digital radiographic imaging assembly incorporating removable and replaceable layers.
  • X-ray phosphors are high-density luminescent materials that emit visible or near visible radiation when stimulated by x-rays or other high-energy electromagnetic photons, and hence are widely employed in various industrial and medical radiographic equipment. Coupling x-ray phosphors to photo diodes, charge coupled devices (CCDs), Complementary metal oxide semiconductors (CMOS devices), and photomultiplier tubes (PMTs) is an efficient way to convert x-rays to electrical signals. This development requires not only advanced x-ray phosphors with enhanced properties, such as high x-ray conversion efficiency, faster luminescence decay times, lower afterglow and greater stability in the radiation field, but also better coupling between the x-ray converter screen and the electronic detector.
  • CCDs charge coupled devices
  • CMOS devices Complementary metal oxide semiconductors
  • PMTs photomultiplier tubes
  • X-ray phosphors must be efficient converters of x-ray radiation into optical radiation in those regions of the electromagnetic spectrum (visible and near visible), which are most efficiently detected by photosensors, such as photomultipliers or photodiodes. It is also desirable that the x-ray phosphors have a high optical clarity, i.e., transmit the optical radiation efficiently to avoid optical trapping, as optical radiation originating deep in the x-ray phosphor body escapes for detection by externally situated photodetectors. This is particularly important in medical diagnostic applications, where it is desirable that x-ray dosage be as small as possible to minimize patient exposure, while maintaining adequate quantum detection efficiency and a high signal-to-noise ratio.
  • Afterglow is the tendency of the x-ray phosphor to continue emitting optical radiation for a time after termination of x-ray excitation, resulting in blurring, with time, of the information-bearing signal. Short afterglow is highly desirable in applications requiring rapid sequential scanning such as, for example, in imaging moving bodily organs.
  • Hysteresis is the x-ray phosphor material property whereby the optical output varies for identical x-ray excitation based on the radiation history of the x-ray phosphor.
  • Hysteresis is undesirable due to the requirement in computerized tomography for repeated precise measurements of optical output from each x-ray phosphor cell and where the optical output must be substantially identical for identical x-ray radiation exposure impinging on the x-ray phosphor body.
  • Typical detecting accuracies are on the order of one part in one thousand for a number of successive measurements taken at relatively high rate.
  • hysteresis can result in image ghosting, where prior imaging history is overlaid on the current radiographic imagery. This can lead to an erroneous diagnosis or interpretation.
  • High x-ray stopping power is desirable for efficient x-ray detection.
  • the phosphor screen utilized should stop the x-rays, at the same time should not hinder the subsequent light emission for capture by the photodetecting device.
  • radiographic imaging systems known in the art suffer from one or more of these drawbacks. It would therefore be desirable to design a radiographic imaging system with enhanced sensitivity and better performance.
  • an adaptable imaging assembly includes a free-standing phosphor film configured to receive incident radiation and to emit corresponding optical signals.
  • An electronic device coupled to the free-standing phosphor film is provided. The electronic device is configured to receive the optical signals from the free-standing phosphor film and to generate an imaging signal.
  • a method for inspecting a component includes exposing the component and a free-standing phosphor film to radiation, generating corresponding optical signals with the free standing phosphor film, receiving the optical signals with an electronic device coupled to the free-standing phosphor film, and generating an imaging signal using the electronic device.
  • a free-standing phosphor film comprising x-ray phosphor particles dispersed in a silicone binder is provided.
  • a method of forming a free-standing phosphor film includes the steps of preparing a phosphor powder, where the phosphor comprises a x-ray phosphor; preparing a binder solution comprising a silicone binder and a curing agent; preparing a slurry by mixing the binder solution and the phosphor powder; forming a phosphor layer on a substrate by applying the slurry on the substrate; curing the phosphor layer to obtain a phosphor film; and removing the phosphor film from the substrate to obtain a free-standing phosphor film.
  • FIG. 1 schematically depicts an adaptable imaging assembly embodiment of the invention
  • FIG. 2 is a flow diagram for an inspection method embodiment of the invention
  • FIG. 3 further illustrates the inspection method of FIG. 2 ;
  • FIG. 4 illustrates a particular embodiment of the adaptable imaging assembly with multiple free-standing phosphor films
  • FIG. 5 is a flow diagram for preparing a free-standing phosphor film according to one embodiment of the present invention.
  • FIG. 6 is an exemplary flexible free-standing phosphor film of Lu 2 O 3 :Eu 3+ ;
  • FIG. 7 is an exemplary flexible free-standing phosphor film of Lu 2 O 3 :Eu 3+ placed between a metal plate and a Si wafer;
  • FIG. 8 schematically depicts an adaptable imaging assembly embodiment of the invention that employs a fiber optic plate.
  • adaptable imaging assembly 20 includes a free-standing phosphor film 10 configured to receive incident radiation and to emit corresponding optical signals. Free-standing phosphor film 10 and methods of making film 10 are described in greater detail below.
  • the radiation source varies based on the application, and examples include x-rays, gamma rays, thermal neutrons and high-energy elemental particle radiation sources.
  • a supporting substrate such as a mylar support would greatly attenuate the incoming thermal neutron imaging beam pattern and reduce signal to noise.
  • Thermal neutrons are highly absorbed in hydrogen containing materials such as mylar.
  • Adaptable imaging assembly 20 further includes an electronic device 12 coupled to the free-standing phosphor film 10 .
  • the electronic device 12 is configured to receive the optical signals from the free-standing phosphor film 10 and to generate an imaging signal.
  • the electronic device 12 may be coupled to the free-standing phosphor film 10 in several ways, including optical coupling (for example using a fiber optic plate), direct coupling and lens coupling.
  • Exemplary electronic devices 12 include CCD, CMOS, photodiode arrays, photo-avalanche arrays, and ⁇ -Si (amorphous silicon) arrays.
  • the electronic device 12 includes a number of light sensitive pixels arranged in an array.
  • the array may be linear or an area array.
  • single pixel devices may be employed, such as photomultiplier tubes (PMTs).
  • PMTs photomultiplier tubes
  • optical coupling fluids (not shown) or optical cement (not shown) are used between the free-standing phosphor film 10 and the electronic device 12 to offer improved matching of the respective indices of refraction of each element.
  • This embodiment will thereby improve optical coupling efficiency and light collection.
  • Example optical cements include, without limitation, UV-cured cement and optical epoxies.
  • the free-standing phosphor film 10 comprises x-ray phosphor particles dispersed in a silicone binder, and FIG. 6 shows an example of such a film.
  • x-ray phosphors suitable for these applications include, but are not limited to, Gd 2 O 2 S:Tb, Gd 2 O 2 S:Eu, CaWO 4 , Y 2 O 2 S:Tb, (YSr)TaO 4 , (YSr)TaO 4 :Gd, (YSr)TaO 4 :Nb, BaFCI:Eu, Lu 2 O 3 :Eu, CsI:Tl, and combinations of these phosphors, or combinations of mentioned activators such as terbium and europium.
  • the choice of a particular material or combinations of materials depends on the specific application.
  • the free-standing film 10 is discussed in greater detail below with reference to FIGS. 5, 6 , and 7 .
  • the free-standing phosphor film 10 includes at least two phosphor powders.
  • This blended phosphor is desirable for certain applications, including amorphous silicon panels. Because amorphous silicon panels are more sensitive to green light, a blend of Lu 2 O 3 :Eu and GOS:Tb may be useful.
  • the Lu 2 O 3 :Eu offers x-ray stopping power and good x-ray-to-light conversion efficiency, but emits in the red area of the spectrum.
  • GOS:Tb provides moderate stopping power, has good conversion efficiency, but offers a better match with amorphous silicon photodetectors. provides moderate stopping power, has good conversion efficiency, but offers a better match with amorphous silicon photodetectors.
  • the adaptable imaging assembly 20 further includes an electron intensification layer 14 coupled to the free-standing phosphor film 10 and that is configured to receive the incident radiation prior to incidence on the free-standing phosphor film 10 .
  • Exemplary electron intensification layers 14 include metallic layers formed of metals with high atomic number, such as lead. Beneficially, electron intensification layers 14 reduce x-ray scatter.
  • electron intensification layer 14 is directly coupled to the free-standing phosphor film 10 . This direct coupling is facilitated by virtue of the fact that the free-standing film 10 does not have a substrate, such as a Mylar® backing.
  • Mylar® is a registered trademark of DuPont-Teijin Films. This allows direct coupling on both sides of the film 10 .
  • Another advantage of the free standing phosphor film 10 is the fact that the low energy electrons emitted from the metal screen at low x-ray energies ( ⁇ 400 kV) are not stopped, as typically happens for conventional phosphor screens with Mylar® backings.
  • the electron intensification layer 14 is removable and replaceable. Beneficially, by configuring the electron intensification layer to be removable, it can be included for high-energy (>1 MeV) applications and removed for lower energy ( ⁇ 150 kV) applications. Similarly, by configuring the electron intensification layer 14 to be replaceable, different electron intensification layers 14 (either with respect to composition, thickness or both) may be employed for different imaging applications.
  • the thickness of the free-standing phosphor film 10 is adjustable.
  • a single 100 micron phosphor layer may be employed for certain imaging applications, and one or more additional layers of 100 micron thick phosphors may be added to build up the thickness of the free-standing phosphor film 10 for other imaging applications.
  • the additional phosphor layers may include the same or different phosphors relative to the initial phosphor layer.
  • the free-standing phosphor film 10 is replaceable.
  • different phosphors and/or different film thicknesses may be employed for different imaging applications.
  • a 50-100 micron free standing phosphor composed of GOS:Tb may be employed directly attached to an amorphous silicon photodetector and may be used to perform nondestructive testing.
  • a heavier phosphor may be used, again with the appropriate thickness for optimum x-ray capture.
  • the latter can also be configured with a metal screen such as 500 microns of lead or tungsten to further improve x-ray image quality.
  • replacement operations may be performed for repair purposes.
  • the free-standing phosphor film 10 is attached to the electronic device 12 .
  • This may be accomplished in many ways, including pressure fitting the free-standing phosphor film 10 to the electronic device 12 .
  • the phosphors may be pressed onto the device using the front cover plate.
  • a frame may also be used. More particularly, the film is pressure fit to a frame.
  • FIG. 8 illustrates another exemplary set of embodiments of adaptable imaging assembly 20 .
  • adaptable imaging assembly 20 further includes a fiber optic plate (FOP) 52 disposed between the free-standing phosphor film 10 and the electronic device 12 .
  • the FOP may be non-scintillating or scintillating.
  • the numerical aperture of the FOP may be adjusted to accept a shallower angle of incident light, in order to improve resolution of the adaptable imaging assembly 20 . This permits improved tuning of spatial resolution and contrast.
  • the electronic device 12 is an amorphous-silicon panel.
  • the FOP may be beneficially combined with optical coupling fluids or optical cement.
  • an optical coupling fluid or optical cement (not shown) may be disposed between the free-standing phosphor film 10 and the FOP 52 .
  • an optical coupling fluid or optical cement may be disposed between the FOP 52 and the electronic device 12 .
  • FIGS. 2 and 3 illustrate another embodiment of the invention, which is directed to a method for inspecting a component 30 .
  • the method includes at step 22 exposing the component 30 and a free-standing phosphor film 10 to radiation, generating corresponding optical signals with the free standing phosphor film 10 at step 24 , and at step 26 receiving the optical signals with an electronic device 12 , which is coupled to the free-standing phosphor film 10 .
  • the inspection method further includes, at step 28 , generating an imaging signal using the electronic device 12 .
  • FIG. 1 For the exemplary embodiment of FIG.
  • the imaging signal is subjected to a number of processing steps (not shown) in a processor 18 , and an image of the component 30 is generated based on one or more imaging signals.
  • the image is displayed on a display 16 , as indicated in FIG. 3 .
  • the method further includes performing at least one of the following operations: adjusting a thickness of the free-standing phosphor film 10 , adding at least one layer of another free-standing phosphor film 10 ′ (which may have the same or a different phosphor(s) as the original film 10 ) to the original free-standing phosphor film 10 , as indicated for example, in FIG. 4 , and replacing the free-standing phosphor film 10 with another free-standing phosphor film (for example, which differs in composition and/or thickness).
  • the latter replacement operation may be employed either to modify or repair the free-standing phosphor film 10 .
  • the method further includes reducing radiation scatter by coupling a high atomic number electron intensification layer 14 to the free-standing phosphor film 10 .
  • the phrase “high atomic number” indicates an atomic number of at least 26.
  • the metallic screen can offer not only scatter rejection, but will also offer further capture of photoelectrons emitted from the metal screen and therefore improved intensification from said metal layer.
  • Metal layers are commonly used in industrial film imaging, where metals such as lead are placed in intimate contact with industrial x-ray film. This results in the primary capture medium for moderate energy x-rays above about 100 kV.
  • the free-standing phosphor film offers direct contact for both the front surface with the photodetector array and for the back surface, with a metal “intensifying” screen.
  • the method further includes performing at least one of the following operations: adjusting a thickness of the electron intensification layer 14 , replacing the electron intensification layer 14 , and removing the electron intensification layer 14 .
  • Another aspect of the invention is to provide a free-standing phosphor film 10 comprising x-ray phosphor particles dispersed in a silicone binder.
  • x-ray phosphors suitable for these applications include, but are not limited to, Gd 2 O 2 S:Tb, Gd 2 O 2 S:Eu, CaWO 4 , Y 2 O 2 S:Tb, (YSr)TaO 4 , (YSr)TaO 4 :Gd, (YSr)TaO 4 :Nb, BaFCl:Eu, Lu 2 O 3 :Eu, CsI:Tl, and combinations of these phosphors.
  • the choice of a particular material or combinations of materials depends on the specific application.
  • the x-ray phosphor is Lu 2 O 3 :Eu.
  • Lu 2 O 3 :Eu has the distinct advantages of high density and hence better x-ray stoppage, and narrow band emission at 610 nm, which matches the spectral response of CCDs.
  • the free-standing phosphor film comprises a blended phosphor comprising at least two different phosphors.
  • blended phosphor comprises GOS:Tb 3+ and Lu 2 O 3 :Eu 3 .
  • Blended phosphors may comprise a combination of phosphors suitable for specific applications. For example, for amorphous Si panels which are more sensitive towards green, a blend of Lu 2 O 3 :Eu and GOS:Tb may be useful. These different phosphors may be combined to form a blend or may be used in different layers.
  • the removable and replaceable layers allow for easy handling. They may be repeatedly reused. Phosphor films may be changed in accordance with the associated electronics. For example, PMTs are sensitive to blue radiation and hence BaFCl:Eu 2+ phosphors are useful. On the other hand, CCDs are more sensitive to red, and hence Lu 2 O 3 :Eu may be useful in those cases.
  • the thickness of the free-standing phosphor film may vary depending on the specific requirement.
  • the sensitivity of the imager assembly is determined by the chemical composition of the phosphor film, its crystal structure, particle shape, the weight amount of phosphor content in the film, and the thickness of the phosphor film.
  • the thickness of the free-standing phosphor film is less than 1 millimeter.
  • the phosphor film has a thickness in a range from about 100 microns to about 500 microns.
  • the term “about” should be understood to mean within ten percent of the stated thickness. Accordingly, “about 100 microns” should be understood to mean 100 +/ ⁇ 10 microns, etc.
  • FIG. 5 shows a flow diagram of a method (indicated generally by reference numeral 32 ) for preparing a free-standing phosphor film according to one embodiment of the present invention.
  • the method includes the steps of preparing a phosphor powder at step 34 , where the phosphor includes an x-ray phosphor.
  • the method includes preparing a binder solution including a silicone binder and a curing agent at step 36 .
  • a slurry is prepared by mixing the binder solution and the phosphor powder.
  • Step 40 includes forming a phosphor layer on a substrate by applying the slurry on the substrate.
  • the phosphor layer is cured to obtain a phosphor film.
  • Step 44 includes removing the phosphor film from the substrate to obtain a free-standing phosphor film 10 .
  • a phosphor powder comprising an x-ray phosphor powder is prepared.
  • the phosphor powder may be prepared by any synthesis method known in the art.
  • Useful synthesis methods include solid state synthesis, co-precipitation, sol-gel synthesis, colloidal methods, flame spray pyrolysis, inverse-microemulsion technique, combustion method, oxalate precipitation method, and microwave synthesis.
  • a co-precipitation method with urea as the precipitant is used. This technique is particularly useful for the preparation of Lu 2 O 3 :Eu phosphor powders with precise particle size and morphology.
  • ammonium carbonate is used as the precipitant.
  • the mean particle size of the phosphor particles varies from about 1 micron to about 25 microns. In some specific embodiments, the mean particle size ranges from about 4 microns to about 5 microns.
  • the co-precipitation method proves useful in yielding phosphor particles with extremely narrow size distribution and uniform spherical morphology.
  • Particle size and shape have significant influence on the rheological properties of the slurry.
  • Particle size and morphology influence the packing density in the film.
  • sharper images are obtained with phosphor particles of smaller mean particle size.
  • light emission efficiency declines with decreasing particle size.
  • the optimum mean particle size for a given application is a compromise between imaging speed and image sharpness desired.
  • a binder solution comprising a binder and a curing agent is prepared.
  • the binder may be any binder compatible with the phosphor system.
  • a silicone binder is used. Silicone binders provide good refractive index matching characteristics with the phosphor particles, and allow light to emit from deep layers and hence enable the use of thick phosphor plates.
  • a slurry is prepared by mixing the binder solution and the phosphor powder. The amount of phosphor powder in the slurry is generally adjusted to have the best rheological character.
  • Step 40 includes forming a phosphor layer on a substrate by applying the slurry on the substrate. Any technique known in the art for preparing layers may be used for forming a phosphor layer.
  • Non-limiting examples of useful formation techniques include, but are not limited to, spraying, screen printing, ink-jet printing, casting, wire-bar coating, extrusion coating, gravure coating, roll coating, and combinations thereof.
  • a casting technique such as tape casting
  • Tape casting proves useful for making large area thin ceramic sheets with controlled thickness and microstructure.
  • substrates may be used for making the film, including, but not limited to plastic, glass, mica, metal substrates, and ceramic substrates.
  • Step 42 includes curing the phosphor layer to obtain a phosphor film. Exemplary curing techniques may involve heating at a specified temperature for a specified duration, or microwave irradiation, or electron beam irradiation, or UV light exposure, or a combination of those.
  • the phosphor film is removed from the substrate to obtain a free-standing phosphor film 10 .
  • the phosphor film may be peeled off by hand.
  • the following example describes the preparation method for a free-standing phosphor film of Lu 2 O 3 :Eu.
  • Lu 2 O 3 :Eu phosphor particles with a mean particle size of 5 microns and with spherical morphology were prepared by a urea assisted coprecipitation method.
  • 2.5 ml of the phosphor powder was weighed and sieved through 100 mesh.
  • 7.02 g of Dow coming Sylgard 184 base was mixed with 7 gm of curing agent in a 50 ml beaker to form a binder solution.
  • the phosphor powder was added to the binder solution in the beaker and mixed vigorously for 5 minutes to remove agglomerates.
  • the beaker was placed in a vacuum dessicator and cycled from vacuum to 1 atmosphere a few times to deair the suspension.
  • a glass substrate of desired size was cleaned, and the suspension is formed into a phosphor layer of desired thickness by standard doctor blade technique.
  • the tape was heated at 80° C. for 15 hrs.
  • the phosphor film was peeled from the glass substrate to obtain a free standing Lu 2 O 3 :Eu film.
  • FIG. 6 illustrates a flexible free-standing phosphor film of Lu 2 O 3 :Eu 3+ ( 46 ), prepared by method 32 .
  • These flexible free-standing films may be used in the imager assembly as described above. These free-standing films are flexible allowing intimate contact with the panels.
  • FIG. 7 shows a free-standing film of Lu 2 O 3 :Eu 3+ ( 46 ) placed in intimate contact between a metal plate ( 50 ) and a Si wafer ( 48 ).
  • the imager assembly described herein may have a wide variety of uses. For example, it may be useful in any system where conversion of high-energy radiation to electric signals is involved. Specifically, it may be useful in a variety of industrial and medical imaging applications, including x-ray radiography, mammography, intra-oral radiography (in dentistry), fluoroscopy, x-ray computed tomography, radionuclide imaging such as positron emission tomography, industrial and non-destructive testing; passive and active screening of baggage and containers.
  • industrial and medical imaging applications including x-ray radiography, mammography, intra-oral radiography (in dentistry), fluoroscopy, x-ray computed tomography, radionuclide imaging such as positron emission tomography, industrial and non-destructive testing; passive and active screening of baggage and containers.

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  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Luminescent Compositions (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Measurement Of Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
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DE602006008682T DE602006008682D1 (de) 2005-03-23 2006-03-08 Bildgebungsanordnung und Prüfverfahren
EP06251230A EP1705478B1 (fr) 2005-03-23 2006-03-08 Ensemble d'imagerie et procédé d'inspection
JP2006063558A JP5450920B2 (ja) 2005-03-23 2006-03-09 画像形成組立体およびそれらの検査方法
CNA2006100718898A CN1837954A (zh) 2005-03-23 2006-03-23 磷光膜、成像组件及检查方法
CN2012104255091A CN102915785A (zh) 2005-03-23 2006-03-23 磷光膜、成像组件及检查方法
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DE602006008682D1 (de) 2009-10-08
EP1705478A1 (fr) 2006-09-27
JP5450920B2 (ja) 2014-03-26
US20070290135A1 (en) 2007-12-20
CN1837954A (zh) 2006-09-27
JP2006267099A (ja) 2006-10-05
EP1705478B1 (fr) 2009-08-26
CN102915785A (zh) 2013-02-06

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