US20060138349A1 - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method Download PDF

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Publication number
US20060138349A1
US20060138349A1 US11/020,567 US2056704A US2006138349A1 US 20060138349 A1 US20060138349 A1 US 20060138349A1 US 2056704 A US2056704 A US 2056704A US 2006138349 A1 US2006138349 A1 US 2006138349A1
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US
United States
Prior art keywords
radiation beam
patterning
array
individually controllable
radiation
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Abandoned
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US11/020,567
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English (en)
Inventor
Arno Bleeker
Johannes Jacobus Baselmans
Marce Mathijs Dierichs
Stanislav Smirnov
Christian Wagner
Lev Ryzhikov
Kars Troost
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ASML Holding NV
ASML Netherlands BV
Original Assignee
ASML Holding NV
ASML Netherlands BV
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Priority to US11/020,567 priority Critical patent/US20060138349A1/en
Assigned to ASML NETHERLANDS B.V., ASML HOLDING N.V. reassignment ASML NETHERLANDS B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BASELMANS, JOHANNES JACOBUS MATHEUS, DIERICHS, MARCE MATHIJS THEODORE MARIE, TROOST, KARS ZEGER, WAGNER, CHRISTIAN, RYZHIKOV, LEV, SMIRNOV, STANISLAV, BLEEKER, ARNO JAN
Priority to SG200508043A priority patent/SG123713A1/en
Priority to TW094144282A priority patent/TW200627086A/zh
Priority to EP05257885A priority patent/EP1674935A3/fr
Priority to JP2005371869A priority patent/JP4390768B2/ja
Priority to CN2009101519005A priority patent/CN101598904B/zh
Priority to CNA2005101341324A priority patent/CN1797214A/zh
Priority to KR1020050129704A priority patent/KR100778133B1/ko
Publication of US20060138349A1 publication Critical patent/US20060138349A1/en
Priority to US12/020,947 priority patent/US7859647B2/en
Priority to JP2009156545A priority patent/JP5156698B2/ja
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Definitions

  • the present invention relates to a lithographic apparatus and a device manufacturing method.
  • a lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate.
  • the lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs), flat panel displays, and other devices involving fine structures.
  • a patterning means which is alternatively referred to as a mask or a reticle, can be used to generate a circuit pattern corresponding to an individual layer of the IC (or other device), and this pattern can be imaged onto a target portion (e.g., comprising part of one or several dies) on a substrate (e.g., a silicon wafer or glass plate) that has a layer of radiation-sensitive material (e.g., resist).
  • the patterning means can comprise an array of individually controllable elements that generate the circuit pattern.
  • a single substrate will contain a network of adjacent target portions that are successively exposed.
  • lithographic apparatus include steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and scanners, in which each target portion is irradiated by scanning the pattern through the beam in a given direction (the “scanning” direction), while synchronously scanning the substrate parallel or anti-parallel to this direction.
  • a polarizing beam splitter is generally used to project the radiation beam onto the individually controllable elements.
  • the radiation beam is projected through the beam splitter twice and a quarter wave plate is used to change the polarization of the radiation beam after first transmission through the beam splitter and before the second transmission through the beam splitter.
  • Use of the polarization to control the direction of the radiation beam means that the cross section of the radiation beam has a uniform polarization, and thus different polarizations cannot be used to create different effects during the exposure.
  • beam splitters are inefficient and can be difficult to thermally control.
  • a non-polarizing beam splitter with a half silvered mirror, can be used instead of a polarizing beam splitter to avoid polarization issues, but with two passes through such a device about 75% or more of the radiation is lost, substantially reducing throughput.
  • a lithographic apparatus comprising an illumination system, an array of individually controllable elements, and a projection system.
  • the illumination system conditions a radiation beam.
  • the array of individually controllable elements patterns the radiation beam.
  • the projection system projects the patterned radiation beam onto a target portion of a substrate.
  • the radiation beam illuminates the array of individually controllable elements non-perpendicularly.
  • the individually controllable elements can change the telecentricity of the radiation beam. This can be done by providing a folding mirror or prism in the object field of the individually controllable elements or a concave optical element to project the radiation beam onto the individually controllable elements.
  • the individually controllable elements can change the optical axis of the radiation beam.
  • There can further be a reflecting device constructed to project the radiation beam onto the array of individually controllable elements.
  • the individually controllable elements are arranged to change the optical axis of the radiation beam after reflection by the individually controllable elements to be different from the optical axis of the radiation beam prior to reflection by the individually controllable elements.
  • the lithographic apparatus can comprise aspheric optical elements for projecting the radiation beam.
  • a device manufacturing method comprising the following steps. Patterning a beam of radiation using an array of individually controllable elements. Projecting the pattern beam onto a substrate. Illuminating the individually controllable elements with the beam of radiation non-perpendicularly.
  • FIG. 1 depicts a lithographic apparatus, according to one embodiment of the present invention.
  • FIGS. 2, 3 , and 4 depict non-telecentric illumination of individually controllable elements, according to various embodiments of the present invention.
  • FIG. 5 depicts a layout of individually controllable elements in one or more of the arrangements shown in one of FIGS. 2, 3 , or 4 , according to one embodiment of the present invention.
  • FIGS. 6, 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , and 15 show additional non-telecentric illumination of individually controllable elements, according to various embodiments of the present invention.
  • FIG. 16 is an overall schematic of an illumination system, patterning array, projection system PL and radiation coupling arrangement, according to one embodiment of the present invention.
  • FIGS. 17 and 18 are alternative optical designs for a relay system, according to various embodiments of the present invention.
  • FIG. 19 depicts patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • FIG. 20 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • FIG. 21 depicts an arrangement of patterning arrays, according to one embodiment of the present invention.
  • FIG. 22 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • FIG. 23 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • FIG. 24 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • alignment mark and “alignment marks” will be used to denote one or more individual, indiscrete alignment marks respectively, unless otherwise stated.
  • individual it is meant that each alignment mark is separate and distinct from others of its kind (i.e., from the other alignment marks).
  • indiscrete it is meant that each alignment mark is not divided into parts (e.g., each alignment mark is a single, undivided entity).
  • dots, dashes, and lines referred to in this specification are merely specific examples. Other forms can be used.
  • lithographic apparatus in the manufacture of integrated circuits (ICs)
  • ICs integrated circuits
  • the lithographic apparatus described herein can have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, thin-film magnetic heads, micro and macro fluidic devices, etc.
  • any use of the terms “wafer” or “die” herein can be considered as synonymous with the more general terms “substrate” or “target portion,” respectively.
  • the substrate referred to herein can be processed, before or after exposure, in for example a track (e.g., a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Further, the substrate can be processed more than once, for example, in order to create a multi-layer IC, so that the term substrate used herein can also refer to a substrate that already contains multiple processed layers.
  • array of individually controllable elements should be broadly interpreted as referring to any device that can be used to endow an incoming radiation beam with a patterned cross-section, so that a desired pattern can be created in a target portion of the substrate.
  • the terms “light valve” and “Spatial Light Modulator” (SLM) can also be used in this context. Examples of such patterning devices are discussed below.
  • a programmable mirror array can comprise a matrix-addressable surface having a viscoelastic control layer and a reflective surface.
  • the basic principle behind such an apparatus is that, for example, addressed areas of the reflective surface reflect incident light as diffracted light, whereas unaddressed areas reflect incident light as undiffracted light.
  • the undiffracted light can be filtered out of the reflected beam, leaving only the diffracted light to reach the substrate. In this manner, the beam becomes patterned according to the addressing pattern of the matrix-addressable surface.
  • the filter can filter out the diffracted light, leaving the undiffracted light to reach the substrate.
  • An array of diffractive optical micro electrical mechanical system (MEMS) devices can also be used in a corresponding manner.
  • Each diffractive optical MEMS device can include a plurality of reflective ribbons that can be deformed relative to one another to form a grating that reflects incident light as diffracted light.
  • a further alternative embodiment can include a programmable mirror array employing a matrix arrangement of tiny mirrors, each of which can be individually tilted about an axis by applying a suitable localized electric field, or by employing piezoelectric actuation devices.
  • the mirrors are matrix-addressable, such that addressed mirrors will reflect an incoming radiation beam in a different direction to unaddressed mirrors; in this manner, the reflected beam is patterned according to the addressing pattern of the matrix-addressable mirrors.
  • the required matrix addressing can be performed using suitable electronic means.
  • the array of individually controllable elements can comprise one or more programmable mirror arrays. More information on mirror arrays as here referred to can be gleaned, for example, from U.S. Pat. Nos. 5,296,891 and 5,523,193, and PCT patent applications WO 98/38597 and WO 98/33096, which are incorporated herein by reference in their entireties.
  • a programmable LCD array can also be used.
  • An example of such a construction is given in U.S. Pat. No. 5,229,872, which is incorporated herein by reference in its entirety.
  • the pattern “displayed” on the array of individually controllable elements can differ substantially from the pattern eventually transferred to a layer of or on the substrate.
  • the pattern eventually generated on the substrate can not correspond to the pattern formed at any one instant on the array of individually controllable elements. This can be the case in an arrangement in which the eventual pattern formed on each part of the substrate is built up over a given period of time or a given number of exposures during which the pattern on the array of individually controllable elements and/or the relative position of the substrate changes.
  • lithographic apparatus in the manufacture of ICs
  • the lithographic apparatus described herein can have other applications, such as, for example, the manufacture of DNA chips, MEMS, MOEMS, integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, thin film magnetic heads, etc.
  • any use of the terms “wafer” or “die” herein can be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein can be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein can be applied to such and other substrate processing tools. Further, the substrate can be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein can also refer to a substrate that already contains multiple processed layers.
  • UV radiation e.g. having a wavelength of 365, 248, 193, 157 or 126 nm
  • EUV extreme ultra-violet
  • particle beams such as ion beams or electron beams.
  • projection system used herein should be broadly interpreted as encompassing various types of projection systems, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate, for example, for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein can be considered as synonymous with the more general term “projection system.”
  • the illumination system can also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the beam of radiation, and such components can also be referred to below, collectively or singularly, as a “lens.”
  • the lithographic apparatus can be of a type having two (e.g., dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables can be used in parallel, or preparatory steps can be carried out on one or more tables while one or more other tables are being used for exposure.
  • the lithographic apparatus can also be of a type wherein the substrate is immersed in a liquid having a relatively high refractive index (e.g., water), so as to fill a space between the final element of the projection system and the substrate.
  • Immersion liquids can also be applied to other spaces in the lithographic apparatus, for example, between the substrate and the first element of the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
  • the apparatus can be provided with a fluid processing cell to allow interactions between a fluid and irradiated parts of the substrate (e.g., to selectively attach chemicals to the substrate or to selectively modify the surface structure of the substrate).
  • FIG. 1 schematically depicts a lithographic projection apparatus 100 according to an embodiment of the invention.
  • Apparatus 100 includes at least a radiation system 102 , an array of individually controllable elements 104 , an object table 106 (e.g., a substrate table), and a projection system (“lens”) 108 .
  • object table 106 e.g., a substrate table
  • projection system (“lens”) 108 e.g., a projection system
  • Radiation system 102 can be used for supplying a beam 110 of radiation (e.g., UV radiation), which in this particular case also comprises a radiation source 112 .
  • a beam 110 of radiation e.g., UV radiation
  • radiation source 112 e.g., UV radiation
  • An array of individually controllable elements 104 can be used for applying a pattern to beam 110 .
  • the position of the array of individually controllable elements 104 can be fixed relative to projection system 108 .
  • an array of individually controllable elements 104 can be connected to a positioning device (not shown) for accurately positioning it with respect to projection system 108 .
  • individually controllable elements 104 are of a reflective type (e.g., have a reflective array of individually controllable elements).
  • Object table 106 can be provided with a substrate holder (not specifically shown) for holding a substrate 114 (e.g., a resist coated silicon wafer or glass substrate) and object table 106 can be connected to a positioning device 116 for accurately positioning substrate 114 with respect to projection system 108 .
  • a substrate 114 e.g., a resist coated silicon wafer or glass substrate
  • object table 106 can be connected to a positioning device 116 for accurately positioning substrate 114 with respect to projection system 108 .
  • Projection system 108 e.g., a quartz and/or CaF 2 lens system or a catadioptric system comprising lens elements made from such materials, or a mirror system
  • a target portion 120 e.g., one or more dies
  • Projection system 108 can project an image of the array of individually controllable elements 104 onto substrate 114 .
  • projection system 108 can project images of secondary sources for which the elements of the array of individually controllable elements 104 act as shutters.
  • Projection system 108 can also comprise a micro lens array (MLA) to form the secondary sources and to project microspots onto substrate 114 .
  • MLA micro lens array
  • Source 112 can produce a beam of radiation 122 .
  • Beam 122 is fed into an illumination system (illuminator) 124 , either directly or after having traversed conditioning device 126 , such as a beam expander, for example.
  • Illuminator 124 can comprise an adjusting device 128 for setting the outer and/or inner radial extent (cornmonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in beam 122 .
  • illuminator 124 will generally include various other components, such as an integrator 130 and a condenser 132 . In this way, beam 110 impinging on the array of individually controllable elements 104 has a desired uniformity and intensity distribution in its cross section.
  • source 112 can be within the housing of lithographic projection apparatus 100 (as is often the case when source 112 is a mercury lamp, for example). In alternative embodiments, source 112 can also be remote from lithographic projection apparatus 100 . In this case, radiation beam 122 would be directed into apparatus 100 (e.g., with the aid of suitable directing mirrors). This latter scenario is often the case when source 112 is an excimer laser. It is to be appreciated that both of these scenarios are contemplated within the scope of the present invention.
  • Beam 110 subsequently intercepts the array of individually controllable elements 104 after being directed using beam splitter 118 . Having been reflected by the array of individually controllable elements 104 , beam 110 passes through projection system 108 , which focuses beam 110 onto a target portion 120 of the substrate 114 .
  • substrate table 6 can be moved accurately, so as to position different target portions 120 in the path of beam 110 .
  • the positioning device for the array of individually controllable elements 104 can be used to accurately correct the position of the array of individually controllable elements 104 with respect to the path of beam 110 , e.g., during a scan.
  • movement of object table 106 is realized with the aid of a long-stroke module (course positioning) and a short-stroke module (fine positioning), which are not explicitly depicted in FIG. 1 .
  • beam 110 can alternatively/additionally be moveable, while object table 106 and/or the array of individually controllable elements 104 can have a fixed position to provide the required relative movement.
  • substrate table 106 can be fixed, with substrate 114 being moveable over substrate table 106 .
  • substrate table 106 is provided with a multitude of openings on a flat uppermost surface, gas being fed through the openings to provide a gas cushion which is capable of supporting substrate 114 .
  • This is conventionally referred to as an air bearing arrangement.
  • Substrate 114 is moved over substrate table 106 using one or more actuators (not shown), which are capable of accurately positioning substrate 114 with respect to the path of beam 110 .
  • substrate 114 can be moved over substrate table 106 by selectively starting and stopping the passage of gas through the openings.
  • lithography apparatus 100 is herein described as being for exposing a resist on a substrate, it will be appreciated that the invention is not limited to this use and apparatus 100 can be used to project a patterned beam 110 for use in resistless lithography.
  • the depicted apparatus 100 can be used in four modes:
  • Step mode the entire pattern on the array of individually controllable elements 104 is projected in one go (i.e., a single “flash”) onto a target portion 120 .
  • Substrate table 106 is then moved in the x and/or y directions to a different position for a different target portion 120 to be irradiated by patterned beam 110 .
  • Pulse mode the array of individually controllable elements 104 is kept essentially stationary and the entire pattern is projected onto a target portion 120 of substrate 114 using pulsed radiation system 102 .
  • Substrate table 106 is moved with an essentially constant speed such that patterned beam 110 is caused to scan a line across substrate 106 .
  • the pattern on the array of individually controllable elements 104 is updated as required between pulses of radiation system 102 and the pulses are timed such that successive target portions 120 are exposed at the required locations on substrate 114 . Consequently, patterned beam 110 can scan across substrate 114 to expose the complete pattern for a strip of substrate 114 . The process is repeated until complete substrate 114 has been exposed line by line.
  • Continuous scan mode essentially the same as pulse mode except that a substantially constant radiation system 102 is used and the pattern on the array of individually controllable elements 104 is updated as patterned beam 110 scans across substrate 114 and exposes it.
  • FIGS. 2, 3 , and 4 depict non-telecentric illumination of individually controllable elements, according to various embodiments of the present invention.
  • a radiation beam PB is a plane parallel beam projected from an illuminator IL behind the patterning array of individually controllable elements PPM (i.e., the chief rays at points across the patterning array are parallel to each other) towards a concave mirror 21 .
  • Concave mirror 21 is annular. The axis of the concave mirror is aligned on the optical axis of the radiation beam PB, the projection system PL, and the array of individually controllable elements PPM. The concave mirror 21 reflects the radiation beam towards the front side of the individually controllable elements PPM where a pattern is applied to the radiation beam.
  • the radiation beam PB is not perpendicular to the patterning array PPM and the patterning array changes the telecentricity of the radiation beam PB.
  • the patterned radiation beam PB is then reflected towards concave mirror 21 and is transmitted through the hole in this mirror into the projection system PL.
  • the concave mirror 21 can be made up of many small mirrors forming a concave shape. Thus, all the mirrors forming the concave shape have a common radius of curvature and a common optical axis.
  • each individually controllable element of the patterning array PPM can have a corresponding mirror element. As the mirror elements are used only to reflect the radiation beam PB prior to reflection by the individually controllable elements, the quality of the mirror 21 or mirror element is not as crucial as for elements used either after reflection by the individually controllable elements or both before and after reflection by the individually controllable elements.
  • a divergent radiation beam PB is projected towards a concave mirror 23 .
  • Concave mirror 23 has a smaller radius of curvature than that shown in FIG. 2 .
  • the concave mirror 23 reflects the radiation beam PB towards the individually controllable elements of patterning array PPM.
  • a folding mirror 24 with a central hole is positioned between concave mirror 21 and patterning array PPM and is arranged at an angle of approximately 45° to the optical axis of the concave mirror 21 and the array PPM.
  • the radiation beam PB is projected from the illuminator IL and reflected by the folding mirror 24 onto a path having the same optical axis as the concave mirror 21 and array PPM.
  • the radiation beam PB is reflected by the concave mirror and the individually controllable elements of array PPM to be transmitted towards the projection system PL.
  • the illuminator is arranged perpendicularly to the optical axis of the projection system, and the folding mirror 24 at 45° to the projection system PL, the position of the illuminator IL can be varied according to the arrangement of the apparatus and the angle of the folding mirror varied accordingly.
  • FIG. 5 depicts a layout of individually controllable elements PPM in one or more of the arrangements shown in one of FIGS. 2, 3 , or 4 , according to one embodiment of the present invention.
  • the object fields 30 of the individually controllable elements of array PPM are arranged in an annulus as shown in FIG. 5 .
  • FIGS. 6, 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , and 15 show additional non-telecentric illumination of individually controllable elements, according to various embodiments of the present invention.
  • fields of individually controllable elements of the array PPM are arranged within an annular area, as illustrated in FIG. 5 , for example.
  • the radiation beam PB from an illuminator IL is reflected by a folding mirror or prism 41 arranged at approximately 45° to the optical axis of the main projection system PL towards the array.
  • Folding mirror or prism 41 is small enough to be in the object field but not the image field of the individually controllable elements PPM.
  • an element 42 with a positive optical power e.g., a convex lens or a lens group
  • the element 42 functions to focus the radiation beam towards an aperture stop 44 of projection system PL.
  • the aperture stop 44 , the element 42 , the patterning array PPM and the folding mirror or prism 41 are all arranged on the same optical axis as the projection system PL.
  • the polarization is a free variable and can be used for imaging and there is less loss of light.
  • an element 45 with negative optical power (e.g., a concave lens or lens group) is placed between the folding mirror or prism 41 and the convex lens 42 .
  • Element 45 is arranged on the same optical axis as the other optical elements 41 , 42 , 44 and is sufficiently small to be in the path of the radiation beam prior to reflection by the individually controllable elements, but not after reflection by them.
  • Element 45 increases the divergence of the radiation beam PB so smaller, cheaper optical elements can be used within the illuminator IL.
  • the individually controllable elements PPM form an annular shape and the radiation beam PB is projected from the illuminator IL through the hole at the center of the PPM annulus towards a mirror 46 .
  • Mirror 46 can have convex or concave shape. In this embodiment, a convex mirror is shown. After reflection by mirror 46 the radiation beam diverges and is transmitted through element 42 which has a positive optical power (e.g., a convex lens or lens group) onto individually controllable elements PPM.
  • Mirror 46 shares the same optical axis as the illuminator IL, element 42 and the projection system PL. Mirror 46 is sufficiently small to reflect the radiation beam PB only before reflection by individually controllable elements and not after reflection.
  • the illuminator IL can occupy space behind the PPM patterning array leading to a more compact device.
  • element 42 ′ is annular. Radiation beam PB is projected through the hole at the center of annular element 42 ′ towards mirror 46 . This results in better transmission of the radiation beam PB prior to reflection by the individually controllable elements of array PPM.
  • the individually controllable elements PPM in this embodiment change the optical axis of the radiation beam PB. After reflection by the individually controllable elements the radiation beam PB is projected towards the projection system PL.
  • Each individually controllable element or group of elements of array PPM has a corresponding mirror 50 used to reflect the radiation beam PB. In one example, to prevent loss of light only the mirrors 50 are illuminated and not the spaces between the mirrors.
  • the individually controllable elements reflecting the radiation beam PB towards the projection system PL are arranged at a small angle of approximately 0.1 rad to the optical axis of the projection system PL. After reflection by the individually controllable elements PPM the radiation beam PB is projected through the spaces between the mirrors 50 .
  • the image field of each individually controllable element or group is projected through the space adjacent to the mirror by which the object field of the same individually controllable element has been reflected.
  • the polarization is again a free variable and can be used advantageously for imaging.
  • the incoming radiation beam PB from illumination system EL is projected onto the array PPM of individually controllable elements through lens 63 , which can be a single lens element or made up of a group of lenses.
  • Convex lens 63 is arranged close to the individually controllable elements such that the radiation beam PB is transmitted through convex lens 63 both prior to and after reflection by the individually controllable elements.
  • the individually controllable elements are arranged to change the optical axis of the radiation beam.
  • the radiation beam PB is then projected through convex lens 63 for a second time.
  • Mirror 64 is arranged at 45° to the radiation beam to conveniently direct the beam into the projection system. As the entrance and exit pupils of this system are physically separate, the precise locations can be varied according to the requirements of the particular apparatus.
  • the patterning array PPM is illuminated at an oblique angle.
  • the radiation beam PB is transmitted towards convex aspheric reflecting optical element 71 , which reflects radiation beam PB towards annular aspheric reflecting optical elements 72 .
  • the radiation beam PB is then projected towards projection system PL.
  • Optical elements 71 and 72 form a Schwarzschild 2 -mirror design but other telescopic designs such a Ritchey-Chrétien design could be used. By using such off-axis telescopic design the optical path differences introduced by the off-axis illumination of the individually controllable elements PPM can be minimized.
  • the use of mirrors instead of a beam splitter cube yields the advantage that there is no light loss due to the polarization effects. Furthermore the mirrors used instead can be better controlled resulting in a more accurate optical system. In this embodiment the mirror system can also have a magnification, reducing the need for further subsequent magnification.
  • the illumination system IL directs a beam of radiation PB onto a first mirror 81 , which can be embodied as two or more part mirrors or one larger mirror.
  • First mirror 81 directs the radiation onto a second mirror 82 , which is positioned between the two parts of a divided patterning array PPM.
  • the second mirror 82 directs the radiation beam PB′ onto third mirror 83 which is set in front of the patterning array, which directs the radiation onto the individually controllable elements.
  • Third mirror 83 has an aperture to allow the patterned beam to pass into the projection lens. It will be appreciated that while the second mirror 82 is shown as convex, it can also be plane or concave.
  • the first and second mirrors of FIG. 13 are omitted and the output of the illumination system IL is arranged between the parts of the patterning array PPM.
  • the illumination system outputs two sub-beams which are directed onto a concave mirror 91 set in front of the patterning array PPM.
  • Concave mirror 91 directs the radiation back onto the patterning array and has an aperture to allow the patterned beam to pass into the projection system.
  • the illuminator is set to one side and directs radiation onto a folding mirror 92 which directs radiation onto the patterning array PPM.
  • the folding mirror 92 has a plurality of apertures corresponding to the plurality of individually controllable elements in the patterning array to allow the beamlets reflected by the elements to pass into the projection system PL.
  • the array of individually controllable elements is quite sparse.
  • FIG. 16 is an overall schematic of the illumination system IL, patterning array PPM, projection system PL and radiation coupling arrangement ( 1601 , 1602 , and 1603 ), while FIGS. 17 and 18 are alternative optical designs for a relay system ( 1601 , 1602 , and 1603 ) that relays of radiation from a mask plane MP in the illuminator IL to the plane of the patterning array PPM. It should be noted that FIGS. 17 and 18 are “unfolded,” omitting the apertured folding mirror 102 shown in FIG. 16 .
  • the illumination system IL comprises a telecentric part which receives light from radiation source LA via beam delivery optics BD.
  • the telecentric part comprises a first diffractive optical element PDE which defines the pupil.
  • the telecentric part also includes zoomable condenser optics Cl, second diffractive optical element FDE, which is filled by the first diffractive optical element and defines the field, and fixed condenser optics C 2 , which provides uniform illumination of the mask plane MP.
  • the relay system comprising first relay lens group 1601 , second relay lens group 1602 and apertured folding mirror 1603 is non-telecentric and projects an image of the mask plane onto the patterning array.
  • a relay system RS includes optical elements 1701 , 1702 , 1703 , 1704 , 1705 , and 1706
  • a relay system RS includes optical element 1801 , 1802 , 1803 , 1804 , 1805 , and 1806
  • the optical elements are either concave, convex, or other types of lenses, as shown. It is to be appreciated other types and configurations of lenses are also contemplated.
  • FIG. 19 depicts patterning arrays, a projection system and a radiation coupling arrangement, according to one embodiment of the present invention.
  • FIG. 19 shows how relay mirrors set at different angles to a plane can be used to couple beamlets from a sparse arrangement of patterning arrays into the projection system.
  • the various patterning arrays PPM 1 -PPM 3 are spaced apart in locations that are convenient for the peripheral electronics and mechanics, e.g. drive circuitry and positioning systems, of each array.
  • Mirrors 1911 - 1913 are then set at appropriate angles relative to a plane 1914 to couple the patterned sub-beams PBL 1 -PBL 3 into the projection system PL.
  • FIG. 20 depicts an illumination system, patterning arrays, projection system, and radiation coupling arrangement, according to one embodiment of the present invention.
  • This embodiment allows extensive, but well separated, arrays of patterning arrays to be coupled into the projection system.
  • This figure shows a section through the illumination and coupling arrangements, with one patterning array from each of several rows of arrays.
  • FIG. 21 depicts an example arrangement of patterning arrays, according to one embodiment of the present invention.
  • the array is shown as viewed from the illumination system.
  • a different number of patterning arrays arranged in different numbers of rows and columns can be used.
  • first coupling mirrors 2021 are disposed on a curved surface and serve to direct radiation output by the illumination system onto respective ones of the patterning arrays PPM 1,1 to PPM 4,N , which modulate the beam according to their respective parts of the pattern to be imaged.
  • the sub-beams reflected from the patterning arrays are then coupled into the projection system PL by second coupling mirrors 2022 which are arranged in the spaces between the sub-beams formed by first coupling mirrors 2021 .
  • the patterned beamlets are combined into a single beam carrying a combined image in the projection system PL, the patterning arrays can be arranged in a comparatively sparse array allowing for plenty of room for peripheral electronics and mechanics.
  • FIG. 22 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • Grazing incidence mirrors 2236 - 2239 are used to generate a virtual dense grid of patterning arrays when using a sparse grid of patterning arrays.
  • a set of illuminator mirrors 2231 - 2235 which can be segments of a single large radius mirror, direct radiation from the illumination system (not shown) onto the patterning arrays PPM 1 -PPM 4 .
  • the selectively reflected sub-beams from each patterning array are then coupled into the projection system PL by grazing incidence mirrors 2236 - 2239 .
  • the patterning arrays appear to occupy a much denser grid, as shown by the dotted outlines in the figure.
  • FIG. 23 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • the patterning arrays PPMI-PPM 4 are set in a plane, but angled so that the selectively reflected sub-beams are directed onto coupling mirrors 2341 - 2344 , which direct them into projection system PL.
  • the arrangement allows for a virtual dense array of patterning arrays, as seen from the projection system, as well as near-perpendicular incidence on the patterning arrays and coupling mirrors, allowing polarization control.
  • a smaller lens PL can be used in the illumination system IL, as compared to lens PL in FIG. 22 , and the folding increases the path length, reducing the telecentricity angle in the projection system.
  • the beam paths from coupling mirrors 2341 - 2344 to projection system pass through spaces between the patterning arrays.
  • FIG. 24 depicts an illumination system, patterning arrays, projection system and radiation coupling arrangement, according to one embodiment of the present invention.
  • Beam paths are arranged so that all the beam paths from the coupling mirrors 2451 - 2454 to the projection system PL pass through a single aperture 2456 in the support structure for the patterning arrays PPM 1 -PPM 4 .
  • This allows a relatively large annular space 2457 for peripheral electronics, mechanics and cabling for the patterning arrays.
  • all beam paths from the illumination system IL to the patterning arrays PPM 1 -PPM 4 pass through a single aperture in the array of coupling mirrors 2451 - 2454 .
  • the patterning array in each embodiment can comprise a plurality of elements arrayed across a single substrate, but equally can comprise several substrates each carrying an array of elements.
  • the array of elements need not be regular, but can be distributed as best suits the illumination arrangements and coupling of the patterned beam into the projection system.
  • Many of the embodiments are illustrated in two dimensional form but have rotational symmetry so can be replicated in more complex arrangements in three dimensions. The description is not intended to limit the invention.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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US11/020,567 2004-12-27 2004-12-27 Lithographic apparatus and device manufacturing method Abandoned US20060138349A1 (en)

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US11/020,567 US20060138349A1 (en) 2004-12-27 2004-12-27 Lithographic apparatus and device manufacturing method
SG200508043A SG123713A1 (en) 2004-12-27 2005-12-13 Lithographic apparatus and device manufacturing method
TW094144282A TW200627086A (en) 2004-12-27 2005-12-14 Lithographic apparatus and device manufacturing method
EP05257885A EP1674935A3 (fr) 2004-12-27 2005-12-20 Appareil lithographique et procédé pour la production d'un dispositif
KR1020050129704A KR100778133B1 (ko) 2004-12-27 2005-12-26 리소그래피 장치 및 디바이스 제조 방법
JP2005371869A JP4390768B2 (ja) 2004-12-27 2005-12-26 リソグラフィ装置およびデバイス製造方法
CN2009101519005A CN101598904B (zh) 2004-12-27 2005-12-26 光刻设备和器件制造方法
CNA2005101341324A CN1797214A (zh) 2004-12-27 2005-12-26 光刻设备和器件制造方法
US12/020,947 US7859647B2 (en) 2004-12-27 2008-01-28 Lithographic apparatus and device manufacturing method
JP2009156545A JP5156698B2 (ja) 2004-12-27 2009-07-01 リソグラフィ装置およびデバイス製造方法

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JP2006186365A (ja) 2006-07-13
CN101598904B (zh) 2012-05-30
JP4390768B2 (ja) 2009-12-24
US20080137053A1 (en) 2008-06-12
JP2009290220A (ja) 2009-12-10
KR100778133B1 (ko) 2007-11-21
US7859647B2 (en) 2010-12-28
EP1674935A2 (fr) 2006-06-28
SG123713A1 (en) 2006-07-26
CN1797214A (zh) 2006-07-05
KR20060074867A (ko) 2006-07-03
CN101598904A (zh) 2009-12-09
JP5156698B2 (ja) 2013-03-06
EP1674935A3 (fr) 2006-11-22
TW200627086A (en) 2006-08-01

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