US20050001916A1 - Imaging device - Google Patents
Imaging device Download PDFInfo
- Publication number
- US20050001916A1 US20050001916A1 US10/807,688 US80768804A US2005001916A1 US 20050001916 A1 US20050001916 A1 US 20050001916A1 US 80768804 A US80768804 A US 80768804A US 2005001916 A1 US2005001916 A1 US 2005001916A1
- Authority
- US
- United States
- Prior art keywords
- photoelectric conversion
- signal
- pixel signals
- pixel
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000003384 imaging method Methods 0.000 title claims description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 56
- 230000000875 corresponding effect Effects 0.000 claims description 5
- 238000005070 sampling Methods 0.000 claims description 3
- 230000002596 correlated effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 206010052143 Ocular discomfort Diseases 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Definitions
- the present invention relates to an imaging device, and in particular to an imaging device which is adapted to prevent noise that contains regularities from being generated in an image formed of pixel signals which are received.
- an imaging device which converts an optical image of a subject into an electric signal, that is, performs photoelectric conversion, is mounted to electronic apparatuses such as a digital still camera and a digital video camera which acquire an image as a digital signal.
- the imaging device there is known a CCD (Charge Coupled Device) sensor and a CMOS sensor.
- the CMOS sensor is a sensor which can be manufactured on the basis of a CMOS-LSI process.
- the entire structure of the CMOS sensor is not necessarily manufactured only by the CMOS-LSI process.
- the CMOS sensor has advantages in that an enormous number of pixels can be arranged at high density, readout of a pixel signal is very fast, power consumption is low, and production cost is low, and has disadvantages in that noise is contained in a pixel signal and fluctuation occurs in pixel accuracy.
- FIG. 1 shows an example of a structure of a general digital video camera mounted with the CMOS sensor.
- This digital video camera 1 generally includes: an optical system; a signal processing system; a recording system; a display system; and a control system.
- the optical system of the digital video camera 1 includes: a lens 2 which condenses an optical image of a subject; a stop 3 which adjusts the amount of light of the optical image; and a CMOS sensor 4 which photoelectrically converts the condensed optical image at a predetermined frame rate and generates a pixel signal.
- the signal processing system includes: a signal correction unit 5 which reduces noise by sampling the pixel signals generated by the CMOS sensor 4 ; an A/D converter 6 which subjects the pixel signal, from which noise has been removed by the signal correction unit 5 , to AD conversion; and a DSP (Digital Signal Processor) which generates an image signal on the basis of the digital pixel signal outputted by the A/D converter 6 .
- a signal correction unit 5 which reduces noise by sampling the pixel signals generated by the CMOS sensor 4
- an A/D converter 6 which subjects the pixel signal, from which noise has been removed by the signal correction unit 5 , to AD conversion
- a DSP Digital Signal Processor
- the recording system of the digital video camera 1 includes: a CODEC (Compression/Decompression) 12 which encodes the image signal inputted from the DSP 7 and records the image signal in a memory 13 , reads out and decodes encoded data recorded in the memory 13 , and supplies an image signal obtained as a result of reading out and decoding the encoded data to the DSP 7 ; and a memory 13 consisting of a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor, or the like which stores the encoded data.
- CODEC compression/Decompression
- the display system of the digital video camera 1 includes: a D/A converter 9 which subjects the image signal supplied from the DSP 7 to DA conversion; a video encoder 10 which converts a color image formed of pixels composed of all components of R, G and B combined, which is outputted by the D/A converter 9 , into ordinary video signals such as luminance Y and color differences Cr and Cb and outputs the video signals to a display 11 ; and a display 11 which consists of an LCD (Liquid Crystal Display) or the like which functions as a finder and a video monitor by displaying an image corresponding to the video signals.
- a D/A converter 9 which subjects the image signal supplied from the DSP 7 to DA conversion
- a video encoder 10 which converts a color image formed of pixels composed of all components of R, G and B combined, which is outputted by the D/A converter 9 , into ordinary video signals such as luminance Y and color differences Cr and Cb and outputs the video signals to a display 11 ; and a display 11 which
- the control system of the digital video camera 1 includes: a timing generator (TG) 8 which controls operation timing of the CMOS sensor 4 or the DSP 7 ; an input device 15 which receives various operations from a user; and a CPU (Central Processing Unit) 14 which controls the entire digital video camera 1 .
- TG timing generator
- CPU Central Processing Unit
- FIG. 2 shows an example of detailed structures of the CMOS sensor 4 and the signal correction unit 5 .
- CMOS sensor 4 a plurality of photoelectric conversion units 31 , which generate pixel signals of respective pixels forming an image according to photoelectric conversion, are arranged vertically and horizontally.
- the photoelectric conversion unit 31 corresponding to a pixel of coordinates (x, y) will be hereinafter referred to as a photoelectric conversion unit 31 -xy.
- Photoelectric conversion units 31 - 00 , 31 - 01 , 31 - 02 , and the like arranged in the vertical direction are connected to a CDS (Correlated Double Sampling) unit 41 - 0 of the signal correction unit 5 via a vertical wiring 32 - 0 .
- Photoelectric conversion units 31 - 10 , 31 - 11 , 31 - 12 , and the like arranged in the vertical direction are connected to a CDS unit 41 - 1 of the signal correction unit 5 via a vertical wiring 32 - 1 .
- photoelectric conversion units 31 -x 0 , 31 -x 1 , 31 -x 2 , and the like arranged in the vertical direction are connected to a CDS unit 41 -x of the signal correction unit 5 via a vertical wiring 32 -x.
- the CDS unit 41 - 0 of the signal correction unit 5 removes noise of pixel signals which are inputted from the photoelectric conversion units 31 - 00 , 31 - 01 , 31 - 02 , and the like via the vertical wiring 32 - 0 , corrects variations among the respective pixel signals due to fluctuation in performance of the respective photoelectric conversion units 31 - 00 , 31 - 01 , 31 - 02 , and the like, and outputs the pixel signals to the A/D converter 6 in a later stage.
- the CDS unit 41 - 1 removes noise of pixel signals which are inputted from the photoelectric conversion units 31 - 10 , 31 - 11 , 31 - 12 , and the like via the vertical wiring 32 - 1 , corrects variations among the respective pixel signals due to fluctuation in performance of the respective photoelectric conversion units 31 - 10 , 31 - 11 , 31 - 12 , and the like, and outputs the pixel signals to the A/D converter 6 in a later stage.
- the CDS unit 41 -x removes noise of pixel signals, which are inputted from the photoelectric conversion units 31 -x 0 , 31 -x 1 , 31 -x 2 , and the like via the vertical wiring 32 -x, corrects variations among the respective pixel signals due to fluctuation in performance of the respective photoelectric conversion units 31 -x 0 , 31 -x 1 , 31 -x 2 , and the like, and outputs the pixel signals to the A/D converter 6 in a later stage.
- the CDS units 41 - 0 , 41 - 1 , 42 - 2 , and the like constituting the signal correction unit 5 also vary among themselves in performance of correction processing thereof.
- fluctuation is prevented for pixel signals of pixels aligned vertically among pixel signals to be inputted to the A/D converter 6 , it is likely that fluctuation still occurs among pixel signals of each vertical line. Therefore, noise in the form of vertical stripes may be generated in an image of an image signal finally obtained.
- the present invention has been devised in view of such a situation, and it is an object of the present invention to make noise having regularity, which is generated in an image of an image signal obtained by using a CMOS sensor, less conspicuous.
- the present invention provides an imaging device which generates pixel signals of pixels forming an image and supplies the pixel signals to a plurality of correction means for correcting the pixel signals, the imaging device including: a plurality of photoelectric conversion means which are arranged vertically and horizontally and generate pixel signals according to photoelectric conversion; supply means which supplies pixel signals generated by the photoelectric conversion means to correction means which are different from correction means to which pixel signals generated by the adjacent photoelectric conversion means are supplied.
- the present invention also provides an imaging device including: a plurality of pixels which are arranged in an imaging device and generate a signal of a level corresponding to the amount of received light; and a plurality of signal lines each of which is arranged for each column of the plurality of pixels, wherein one pixel column of the plurality of pixels includes at least a first pixel and a second pixel, a signal from the first pixel is read out to a signal processing circuit, which is provided at an end of a first signal line included in the plurality of signal lines, through the first signal line, and a signal from the second pixel is read out to a signal processing circuit, which is provided at an end of a second signal line included in the plurality of signal lines, through the second signal line different from the first signal line.
- An imaging device of the present invention is characterized by including: a plurality of photoelectric conversion means which are arranged vertically and horizontally and generate pixel signals according to photoelectric conversion; supply means which supplies pixel signals generated by the photoelectric conversion means to correction means different from correction means to which pixel signals generated by photoelectric conversion means adjacent to the photoelectric conversion means are supplied.
- the imaging device may be a CMOS sensor.
- the correction unit may be a CDS processing circuit.
- the supply means may be adapted to supply pixel signals generated by the photoelectric conversion means to a CDS processing circuit different from the CDS processing circuit to which pixel signals generated by the adjacent photoelectric conversion means are supplied.
- pixel signals are generated according to photoelectric conversion, and the generated pixel signals are supplied to correction means different from the correction means to which signals of adjacent pixels are supplied.
- FIG. 1 is a block diagram showing an example of a structure of a conventional general digital video camera
- FIG. 2 is a block diagram showing an example of a structure of a conventional CMOS sensor
- FIG. 3 is a block diagram showing an example of a structure of a CMOS sensor which is an embodiment of the present invention.
- FIG. 4 is a block diagram showing an example in which the present invention is applied to an imaging device provided with an AD conversion circuit for each pixel column.
- FIG. 3 shows an example of a structure of a CMOS sensor which is an embodiment of the present invention.
- This CMOS sensor 50 is used for the structure of the digital video camera 1 of FIG. 1 instead of the conventional CMOS sensor 4 shown in FIG. 2 .
- the CMOS sensor 50 includes a plurality of photoelectric conversion units 51 -xy, which generate pixel signals of respective pixels forming an image signal according to photoelectric conversion and are arranged vertically and horizontally, and a plurality of wirings 52 -x.
- x and y indicate coordinates of a pixel.
- a photoelectric conversion unit corresponding to a pixel of coordinates (x, y) will be hereinafter referred to as a photoelectric conversion unit 51 -xy.
- Pixel signals outputted from the CMOS sensor 50 are inputted to a signal correction unit 5 .
- the signal correction unit 5 includes CDS units 41 - 0 , 41 - 1 , 42 - 2 , and the like.
- the CDS units 41 - 0 , 41 - 1 , 42 - 2 , and the like vary among themselves in performance of correction processing thereof.
- Photoelectric conversion units 51 - 00 , 51 - 01 , 51 - 02 , and the like, which are arranged in the vertical direction, are not necessarily connected the CDS unit 41 - 0 of the signal correction unit 5 via a wiring 52 - 0 .
- Each of the conversion units is connected to a CDS unit 41 -z, which is different from those of the adjacent photoelectric conversion units 51 in all four directions, via a wiring 52 -z.
- z indicates a coordinate in the horizontal direction, which is a random value without regularity.
- Photoelectric conversion units 51 - 10 , 51 - 11 , 51 - 12 , and the like, which are arranged in the vertical direction, are not necessarily connected to the CDS unit 41 - 1 of the signal correction unit 5 via a wiring 52 - 1 .
- Each of the conversion units is connected to the CDS unit 41 -z, which is different from those of the adjacent photoelectric conversion units 51 in all four directions, via the wiring 52 -z.
- z indicates a coordinate in the horizontal direction, which is a random value without regularity.
- photoelectric conversion units 51 -x 0 , 51 -x 1 , 51 -x 2 , and the like, which are arranged in the vertical direction, are not necessarily connected to the CDS unit 41 -x of the signal correction unit 5 via a wiring 52 -x.
- Each of the conversion units is connected to the CDS unit 41 -z, which is different from those of the adjacent photoelectric conversion units 51 in all four directions, via the wiring 52 -z.
- z indicates a coordinate in the horizontal direction, which is a random value without regularity.
- the CDS unit 41 - 0 of the signal correction unit 5 removes noise of pixel signals, which are inputted via the wiring 52 - 0 , corrects variations among the respective pixel signals, and outputs the pixel signals to an A/D converter 6 in a later stage.
- the CDS unit 41 - 1 removes noise of pixel signals which are inputted via the vertical wiring 52 - 1 , and corrects variations among the respective pixel signals, and outputs the pixel signals to the A/D converter 6 in the later stage.
- the CDS unit 41 -x removes noise of pixel signals which are inputted via the vertical wiring 52 -x, corrects variations among the respective pixel signals, and outputs the pixel signals to the A/D converter 6 in a later stage.
- respective pixel signals of the image which is obtained finally are corrected by one of the CDS units 41 - 0 , 41 - 1 , 42 - 2 , . . . which is different from those correcting pixel signals of the adjacent pixels in all four directions.
- the CDS units 41 - 0 , 41 - 1 , 42 - 2 , and the like vary among themselves in performance of correction processing.
- the influence of this fluctuation is not visually conspicuous in the form of a vertical fringe, horizontal fringe, or the like, and the noise in the image which is obtained finally is random; that is, without regularity. Therefore, it becomes possible to reduce visual discomfort caused in those who see the image.
- CMOS sensor 50 which the present invention utilizes merely replaces the conventional CMOS sensor 4 as described above.
- additional operations for correction are not required. Therefore, the above-mentioned effect can be obtained without increasing time required until a final image signal is obtained.
- CMOS sensor 50 to which the present invention is applied, to all electronic apparatuses which generate a digital image signal on the basis of an optical image of a digital still camera, a scanner, or the like, as well as a digital video camera.
- the imaging device provided with a CDS unit for each pixel column is described.
- the present invention can be applied not only to the imaging device provided with a CDS unit but also to an imaging device which is provided with a general signal processing circuit, such as an AD conversion unit, for each pixel column.
- FIG. 4 an imaging device provided with an AD conversion circuit for each pixel column, to which the present invention is applied, is shown.
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003084146A JP3972302B2 (ja) | 2003-03-26 | 2003-03-26 | 撮像素子 |
JPP2003-084146 | 2003-03-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050001916A1 true US20050001916A1 (en) | 2005-01-06 |
Family
ID=33399372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/807,688 Abandoned US20050001916A1 (en) | 2003-03-26 | 2004-03-24 | Imaging device |
Country Status (3)
Country | Link |
---|---|
US (1) | US20050001916A1 (ja) |
JP (1) | JP3972302B2 (ja) |
KR (1) | KR20040084843A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060138216A1 (en) * | 2004-12-28 | 2006-06-29 | Lite-On Semiconductor Corp. | Smart phone with a scan and identification |
US20070177861A1 (en) * | 2006-01-16 | 2007-08-02 | Riichi Ono | Image pickup apparatus and lens position adjustment method |
US20130258082A1 (en) * | 2012-03-30 | 2013-10-03 | Fujifilm Corporation | Stripe noise correction method of captured image, photographing apparatus and electronic endoscopic apparatus |
CN105575984A (zh) * | 2014-10-30 | 2016-05-11 | 全视技术有限公司 | 用于供结合背面照明式光传感器数组的电路的特别用途的集成电路的接地系统传感器集成电路 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8089532B2 (en) | 2008-01-25 | 2012-01-03 | Aptina Imaging Corporation | Method and apparatus providing pixel-wise noise correction |
JP4683112B2 (ja) * | 2008-10-31 | 2011-05-11 | ソニー株式会社 | 固体撮像装置、撮像装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4500915A (en) * | 1981-10-09 | 1985-02-19 | Hitachi, Ltd. | Color solid-state imager |
US6433822B1 (en) * | 1998-03-31 | 2002-08-13 | Intel Corporation | Method and apparatus for self-calibration and fixed-pattern noise removal in imager integrated circuits |
US6452149B1 (en) * | 2000-03-07 | 2002-09-17 | Kabushiki Kaisha Toshiba | Image input system including solid image sensing section and signal processing section |
US6601153B1 (en) * | 1999-12-31 | 2003-07-29 | Unisys Corporation | Method and apparatus for increasing computer performance through asynchronous memory block initialization |
US6690421B1 (en) * | 1996-10-30 | 2004-02-10 | Fuji Photo Film Co., Ltd. | Structure of solid state image pickup device |
US6766474B2 (en) * | 2000-12-21 | 2004-07-20 | Intel Corporation | Multi-staged bios-based memory testing |
US20040158701A1 (en) * | 2003-02-12 | 2004-08-12 | Dell Products L.P. | Method of decreasing boot up time in a computer system |
US7113215B2 (en) * | 2002-02-04 | 2006-09-26 | Fujitsu Limited | CMOS image sensor |
-
2003
- 2003-03-26 JP JP2003084146A patent/JP3972302B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-24 US US10/807,688 patent/US20050001916A1/en not_active Abandoned
- 2004-03-25 KR KR1020040020402A patent/KR20040084843A/ko not_active Application Discontinuation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4500915A (en) * | 1981-10-09 | 1985-02-19 | Hitachi, Ltd. | Color solid-state imager |
US6690421B1 (en) * | 1996-10-30 | 2004-02-10 | Fuji Photo Film Co., Ltd. | Structure of solid state image pickup device |
US6433822B1 (en) * | 1998-03-31 | 2002-08-13 | Intel Corporation | Method and apparatus for self-calibration and fixed-pattern noise removal in imager integrated circuits |
US6601153B1 (en) * | 1999-12-31 | 2003-07-29 | Unisys Corporation | Method and apparatus for increasing computer performance through asynchronous memory block initialization |
US6452149B1 (en) * | 2000-03-07 | 2002-09-17 | Kabushiki Kaisha Toshiba | Image input system including solid image sensing section and signal processing section |
US6766474B2 (en) * | 2000-12-21 | 2004-07-20 | Intel Corporation | Multi-staged bios-based memory testing |
US7113215B2 (en) * | 2002-02-04 | 2006-09-26 | Fujitsu Limited | CMOS image sensor |
US20040158701A1 (en) * | 2003-02-12 | 2004-08-12 | Dell Products L.P. | Method of decreasing boot up time in a computer system |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060138216A1 (en) * | 2004-12-28 | 2006-06-29 | Lite-On Semiconductor Corp. | Smart phone with a scan and identification |
US20070177861A1 (en) * | 2006-01-16 | 2007-08-02 | Riichi Ono | Image pickup apparatus and lens position adjustment method |
US8417107B2 (en) * | 2006-01-16 | 2013-04-09 | Sony Corporation | Image pickup apparatus and lens position adjustment method |
US20130258082A1 (en) * | 2012-03-30 | 2013-10-03 | Fujifilm Corporation | Stripe noise correction method of captured image, photographing apparatus and electronic endoscopic apparatus |
US9282302B2 (en) * | 2012-03-30 | 2016-03-08 | Fujifilm Corporation | Stripe noise correction method of captured image, photographing apparatus and electronic endoscopic apparatus |
CN105575984A (zh) * | 2014-10-30 | 2016-05-11 | 全视技术有限公司 | 用于供结合背面照明式光传感器数组的电路的特别用途的集成电路的接地系统传感器集成电路 |
US9478580B2 (en) * | 2014-10-30 | 2016-10-25 | Omnivision Technologies, Inc. | Grounding system for integrated circuits of particular usefulness for circuits incorporating backside-illuminated photosensor arrays |
Also Published As
Publication number | Publication date |
---|---|
KR20040084843A (ko) | 2004-10-06 |
JP3972302B2 (ja) | 2007-09-05 |
JP2004297246A (ja) | 2004-10-21 |
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AS | Assignment |
Owner name: SONY CORPORATION, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TAKITA, HISASHI;REEL/FRAME:015731/0267 Effective date: 20040811 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |