US20040026038A1 - Plasma treatment apparatus - Google Patents

Plasma treatment apparatus Download PDF

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Publication number
US20040026038A1
US20040026038A1 US10/636,590 US63659003A US2004026038A1 US 20040026038 A1 US20040026038 A1 US 20040026038A1 US 63659003 A US63659003 A US 63659003A US 2004026038 A1 US2004026038 A1 US 2004026038A1
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United States
Prior art keywords
container
treatment
gas
groove
introduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/636,590
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English (en)
Inventor
Kazuto Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Kazuto Yoshida
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Filing date
Publication date
Application filed by Kazuto Yoshida filed Critical Kazuto Yoshida
Publication of US20040026038A1 publication Critical patent/US20040026038A1/en
Assigned to MITSUBISHI HEAVY INDUSTRIES, LTD. reassignment MITSUBISHI HEAVY INDUSTRIES, LTD. CORRECTED COVER SHEET TO CORRECT ASSIGNOR'S NAME, PREVIOUSLY RECORDED AT REEL/FRAME 014570/0369 (ASSIGNMENT OF ASSIGNOR'S INTEREST) Assignors: YOSHIDA, KAZUTO
Priority to US11/608,130 priority Critical patent/US7806078B2/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Definitions

  • This invention relates to a plasma treatment apparatus for forming a film on the surface of a substrate by vapor deposition.
  • the plasma CVD system is a system in which a source gas for constituting a film is introduced into a film formation chamber within a container, high frequency waves are shot from a high frequency antenna to convert the source gas into the state of a plasma, and excited active atoms in the plasma promote chemical reactions on the surface of the substrate to carry out film formation.
  • an auxiliary gas and a cleaning gas for performing cleaning are introduced, along with the source gas which will become the material for the film.
  • pipings for introducing a plurality of gases are connected to the container.
  • a plurality of gas nozzles are provided in the circumferential direction of the container which is cylindrical in shape.
  • the plurality of gas nozzles are provided in the container such that plural types of gas nozzles for the different types of gases are present, and plural gas nozzles of each type are present.
  • the same number of the pipings as the number of the gas nozzles are connected for each of the types of the gases.
  • the piping system is complicated, making the configuration of the container complicated, eventually making the manufacture and disassembly of the container difficult.
  • the present invention has been accomplished in the light of the above -mention problems with the earlier technologies. It is the object of the invention to provide a plasma treatment apparatus which can simply the configuration of the container without complicating the pipings for gases.
  • a plasma treatment apparatus which introduces a treatment gas into a treatment chamber through a treatment gas nozzle, and generates a plasma in the treatment chamber to treat a surface of a substrate with atoms and molecules excited and activated in the treatment chamber, comprising:
  • the container can be simplified without the need to provide gas piping for each of the treatment gas nozzles.
  • the plasma CVD apparatus can simplify the configuration of the container without complicating the gas pipings.
  • a plasma treatment apparatus which introduces a treatment gas into a treatment chamber through a treatment gas nozzle, and generates a plasma in the treatment chamber to treat a surface of a substrate with atoms and molecules excited and activated in the treatment chamber, comprising:
  • a container defining the treatment chamber the container being divided into an upper container and a lower container;
  • treatment gas introduction means connected to the introduction groove
  • communication means for bringing the circumferential groove and the introduction groove into communication with each other at a plurality of locations.
  • the container can be simplified and is divisible, without the need to provide gas piping for each of the treatment gas nozzles.
  • the plasma CVD apparatus can simplify the configuration of the container without complicating the gas pipings. Also, the container is easy to assemble and disassemble, and its maintainability and inspectability can be improved.
  • the introduction groove may be formed over a length of nearly a half of a circumference in a circumferential direction of the container; the treatment gas introduction means may be in communication with a halfway portion of the introduction groove; and the communication means may be in communication with opposite ends of the introduction groove. Because of this feature, the treatment gases can be equally supplied.
  • the circumferential groove, the introduction groove, a portion of communication between the treatment gas nozzle and the circumferential groove, a portion of communication between the treatment gas introduction means and the introduction groove, and the communication means for establishing communication between the circumferential groove and the introduction groove may be each formed by machining. According to this feature, machining can be performed easily.
  • a seal ring member may be provided at a junction between the upper container and the lower container, and disposed on a side opposite to the treatment chamber, with the communication means for communication between the circumferential groove and the introduction groove being located between the seal ring member and the treatment chamber. Because of this feature, gas leakage is unlikely even with the use of a simple seal ring member.
  • FIG. 1 is a schematic side view of a plasma CVD apparatus according to an embodiment of the present invention
  • FIG. 2 is a sectional view of essential parts of a container showing the concrete situation of gas pipings
  • FIG. 3 is a view taken along line III-III of FIG. 2;
  • FIG. 4 is a view taken along line IV-IV of FIG. 2;
  • FIG. 5 is a view taken along line V-V of FIG. 2;
  • FIG. 6 is a conceptual view showing the situation of connection of the gas pipings.
  • FIG. 1 is a schematic side view of a plasma CVD apparatus according to an embodiment of the present invention.
  • FIG. 2 is a sectional view of essential parts of a container showing the concrete situation of gas pipings.
  • FIG. 3 is a view taken along line III-III of FIG. 2.
  • FIG. 4 is a view taken along line IV-IV of FIG. 2.
  • FIG. 5 is a view taken along line V-V of FIG. 2.
  • FIG. 6 is a conceptual view showing the situation of connection of the gas pipings.
  • a cylindrical aluminum container 2 is provided on a base 1 , and a film formation chamber 3 as a treatment chamber is defined within the container 2 .
  • a circular RF entrance window 4 is provided at the top of the container 2 .
  • the film formation chamber 3 at the center of the container 2 is equipped with a support stand device 5 .
  • the support stand device 5 has a bearing portion 9 which electrostatically attracts and holds a substrate 6 of a semiconductor.
  • a holding mechanism 7 equipped with an electrostatic chuck support mechanism is provided below the bearing portion 9 .
  • a direct current power source 21 and a bias applying high frequency power source 22 are connected to the holding mechanism 7 of the support stand device 5 to generate low frequency waves in the bearing portion 9 and also produce an electrostatic force therein.
  • the support stand device 5 is free to move up and down as a whole, so that its height in the vertical direction can be adjusted to an optimal height.
  • a high frequency antenna 13 of, for example, a circular ring shape is disposed on the RF entrance window 4 .
  • a plasma generating high frequency power source 15 is connected to the high frequency antenna 13 via a matching instrument 14 .
  • electromagnetic waves are shot into the film formation chamber 3 of the container 2 .
  • the electromagnetic waves shot into the container 2 ionize gases in the film formation chamber 3 to generate a plasma.
  • the container 2 is provided with gas supply nozzles 16 , as treatment gas nozzles, for supplying a source gas such as a silane (for example, SiH 4 ).
  • a source gas such as a silane (for example, SiH 4 ).
  • the source gas which will become a film forming material (for example, Si), is supplied into the film formation chamber 3 through the gas supply nozzles 16 .
  • the container 2 is also provided with auxiliary gas supply nozzles 17 , as treatment gas nozzles, for supplying an inert gas (rare gas), such as argon or helium, or an auxiliary gas such as oxygen or hydrogen.
  • auxiliary gas supply nozzles 17 as treatment gas nozzles, for supplying an inert gas (rare gas), such as argon or helium, or an auxiliary gas such as oxygen or hydrogen.
  • cleaning gas nozzles 19 as treatment gas nozzles, for supplying a fluorine-based gas or a chlorine-based gas (cleaning gas) which carries out cleaning.
  • An exhaust port 18 which is connected to a vacuum pumping system (not shown) for evacuating the interior of the container 2 , is provided in the base 1 . Also, a carry-in/carry-out port for the substrate 6 is provided in the container 2 , although it is not shown, for carrying the substrate 6 from a transport chamber (not shown) into the container 2 and carrying the substrate 6 out of the container 2 to the transport chamber.
  • the substrate 6 is placed on the bearing portion 9 of the support stand device 5 , and electrostatically attracted thereto.
  • the source gas at a predetermined flow rate was supplied through the gas supply nozzles 16 into the film formation chamber 3
  • the auxiliary gas at a predetermined flow rate was supplied through the auxiliary gas supply nozzles 17 into the film formation chamber 3 .
  • the interior of the film formation chamber 3 is set at a predetermined pressure adapted to the film forming conditions.
  • the electric power is supplied from the high frequency power source 15 to the high frequency antenna 13 to generate high frequency waves.
  • the electric power is supplied from the direct current power source 21 to the bearing portion 9 to generate low frequency waves.
  • the source gas within the film formation chamber 3 discharges, and partly comes into a plasma state.
  • This plasma collides with other neutral molecules in the source gas, further ionizing or exciting the neutral molecules.
  • the so formed active particles are attracted to the surface of the substrate 6 to cause a chemical reaction with high efficiency, thereby depositing thereon to form a CVD film.
  • the film forming material adheres to and deposits on the inner wall of the film formation chamber 3 , namely, the wall surface of the container 2 or the surface of the RF entrance window 4 .
  • the plasma is generated, with the cleaning gas being supplied through the cleaning gas nozzles 19 , to etch away the film forming material.
  • the types of the gas nozzles in the above-described embodiment are only for illustration, and any types of gas nozzles, including a single type to a plurality of types, can be provided.
  • the container 2 defining the film formation chamber 3 is divided into an upper container 31 and a lower container 32 , which were mechanically bonded together by bolts 33 .
  • introduction grooves 34 , 35 , 36 which are each formed over the length of nearly a half of a circumference in the circumferential direction of the container 2 , are formed in the lower container 32 .
  • the introduction grooves 34 , 35 , 36 serve as channels for the gases.
  • Source gas piping 37 is connected to a halfway portion of the introduction groove 34 .
  • Auxiliary gas piping 38 is connected to a halfway portion of the introduction groove 35 .
  • Cleaning gas piping 39 is connected to a halfway portion of the introduction groove 36 .
  • the introduction grooves 34 , 35 , 36 and the source gas piping 37 , auxiliary gas piping 38 and cleaning gas piping 39 are connected to each other in communication with vertical channels 41 and horizontal channels 42 .
  • the introduction grooves 34 , 35 , 36 , the vertical channels 41 , and the horizontal channels 42 are formed by machining.
  • the horizontal channels 42 are each machined, starting at the circumferential surface of the lower container 32 , and a circumferential surface portion of the horizontal channel 42 is closed with a blindmember.
  • the vertical channels 41 are machined, starting at the lower surface of the lower container 32 , and brought into communication with the horizontal channels 42 .
  • the source gas piping 37 , auxiliary gas piping 38 and cleaning gas piping 39 are connected to lower surface portions of the vertical channels 41 .
  • the lower ends of lower communication paths 43 , 44 , 45 communicate with both ends of the introduction grooves 34 , 35 , 36 , respectively.
  • the lower communication paths 43 , 44 , 45 are vertically machined, starting at the upper surface of the lower container 32 , and are brought into communication with the opposite ends of the introduction grooves 34 , 35 , 36 , respectively.
  • the introduction grooves 34 , 35 , 36 may be provided in a circumferential form in the entire circumferential direction of the container 2 , and the lower communication paths 43 , 44 , 45 , as communication means, may be provided at 3 or more locations with equal spacing.
  • circumferential grooves 46 , 47 , 48 which are formed in the circumferential direction of the container 2 , are formed in the upper container 31 .
  • the circumferential grooves 46 , 47 , 48 serve as channels for gases.
  • the upper ends of upper communication paths 51 , 52 , 53 as communication means, communicate with the circumferential grooves 46 , 47 , 48 , respectively.
  • the upper communication paths 51 , 52 , 53 are provided in correspondence with the lower communication paths 43 , 44 , 45 .
  • the upper communication paths 51 , 52 , 53 are machined in the vertically direction, starting at the lower surface of the upper container 31 , and have the upper ends in communication with the circumferential grooves 46 , 47 , 48 .
  • the lower ends of the upper communication paths 51 , 52 , 53 are connected to the upper ends of the lower communication paths 43 , 44 , 45 .
  • the circumferential groove 46 is bored so that a plurality of the gas supply nozzles 16 are connected thereto with equal spacing in the circumferential direction.
  • the circumferential groove 47 is bored so that a plurality of the auxiliary gas supply nozzles 17 are connected thereto with equal spacing in the circumferential direction.
  • the circumferential groove 48 is bored so that a plurality of the cleaning gas nozzles 19 are connected thereto with equal spacing in the circumferential direction.
  • the source gas fed from the source gas piping 37 to the introduction groove 34 is fed from the opposite ends of the introduction groove 34 to the circumferential groove 46 through the lower communication paths 43 and the upper communication paths 51 , whereafter the source gas is supplied to the gas supply nozzles 16 through the circumferential groove 46 .
  • the auxiliary gas fed from the auxiliary gas piping 38 to the introduction groove 35 is fed from the opposite ends of the introduction groove 35 to the circumferential groove 47 through the lower communication paths 44 and the upper communication paths 52 , whereafter the auxiliary gas is supplied to the auxiliary gas supply nozzles 17 through the circumferential groove 47 .
  • the cleaning gas fed from the cleaning gas piping 39 to the introduction groove 36 is fed from the opposite ends of the introduction groove 36 to the circumferential groove 48 through the lower communication paths 45 and the upper communication paths 53 , whereafter the cleaning gas is supplied to the cleaning gas nozzles 19 through the circumferential groove 48 .
  • a seal ring 55 is provided at the junction between the upper container 31 and the lower container 32 .
  • the seal ring 55 is disposed on the side opposite to the film formation chamber 3 (i.e., outwardly of the film formation chamber 3 ), with the communication means composed of the lower communication paths 43 , 44 , 45 and the upper communication paths 51 , 52 , 53 being located between the seal ring 55 and the film formation chamber 3 .
  • Treatments, such as film formation are performed, with the interior of the film formation chamber 3 being kept in a vacuum state. Even if the gases leak and the seal ring 55 does not function, therefore, the gases do not escape to the outside of the container 2 because of a pressure differential.
  • the channels for different types of gases are formed within the container 2 by the grooves, and the gases introduced through the source gas piping 37 , the auxiliary gas piping 38 and the cleaning gas piping 39 are equally supplied to the plural gas supply nozzles 16 , the plural auxiliary gas supply nozzles 17 , and the plural cleaning gas nozzles 19 .
  • This configuration obviates the necessity for providing piping for each of the plurality of gas supply nozzles 16 , auxiliary gas supply nozzles 17 and cleaning gas nozzles 19 .
  • the container 2 is of a simple structure, so that its maintainability increases, its assembly and disassembly are simplified, and its inspectability improves.
  • the gases are supplied from the opposite ends of the introduction grooves 34 , 35 , 36 to the circumferential grooves 46 , 47 , 48 .
  • the gases are equally distributed to the plural gas supply nozzles 16 , the plural auxiliary gas supply nozzles 17 , and the plural cleaning gas nozzles 19 .
  • the flows of the gases and the distributions of the pressure losses are uniform and ideal, so that the occurrence of differences among the individual pipings, etc. can be suppressed.
  • the channels for the gases are not exposed to the atmosphere. Thus, there is no risk of leakage, there is no mixing of the different types of gases, and safety is increased. Moreover, a simple seal is sufficient for sealing purposes. Even if a sealing failure occurs, leakage of the gases to the outside of the container 2 is unlikely.
  • the container 2 is divided into the upper container 31 and the lower container 32 .
  • the circumferential grooves 46 , 47 , 48 and the gas supply nozzles 16 , auxiliary gas supply nozzles 17 and cleaning gas nozzles 19 are provided in the upper container 31 .
  • temperature control means is provided outside a container 2 to exercise temperature control of film formation while suppressing temperature changes.
  • electrical heating/cooling means chiller piping and, if desired, a heat insulating material, etc., thereby constructing a container 2 minimally varying in temperature.
  • the channels for the different types of gases are formed within the container 2 by the grooves, and the wall thickness of the container 2 (upper container 31 , lower container 32 ) is increased.
  • the time constant of temperature can be decreased to increase heat capacity.
  • the present invention may be constituted such that the grooves are formed at least in the container 2 , whereby the channels for the gases are provided to dispense with piping. As long as the channels for the gases are formed by the grooves, the container 2 need not be divided. Alternatively, the grooves may be formed by use of molds during casting, without relying on machining.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
US10/636,590 2002-08-09 2003-08-08 Plasma treatment apparatus Abandoned US20040026038A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/608,130 US7806078B2 (en) 2002-08-09 2006-12-07 Plasma treatment apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-232332 2002-08-09
JP2002232332A JP3861036B2 (ja) 2002-08-09 2002-08-09 プラズマｃｖｄ装置

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US (2) US20040026038A1 (ja)
EP (1) EP1398820B1 (ja)
JP (1) JP3861036B2 (ja)
KR (1) KR100790649B1 (ja)
DE (1) DE60317147T2 (ja)
TW (1) TWI264062B (ja)

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US20100012275A1 (en) * 2005-05-30 2010-01-21 Tokyo Electron Limited Plasma processing apparatus
US20100239756A1 (en) * 2007-09-28 2010-09-23 Tokyo Electron Limited Plasma processing apparatus and gas exhaust method
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US20140038421A1 (en) * 2012-08-01 2014-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition Chamber and Injector
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
US20150177124A1 (en) * 2012-05-04 2015-06-25 Ecolab Usa Inc Self-cleaning optical sensor
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US9875895B2 (en) * 2011-11-17 2018-01-23 Eugene Technology Co., Ltd. Substrate processing apparatus including exhaust ports and substrate processing method
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US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
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US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
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KR100790649B1 (ko) 2007-12-31
DE60317147T2 (de) 2008-08-07
EP1398820A2 (en) 2004-03-17
US20070090032A1 (en) 2007-04-26
JP3861036B2 (ja) 2006-12-20
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US7806078B2 (en) 2010-10-05
EP1398820A3 (en) 2006-01-11
KR20040014317A (ko) 2004-02-14

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