US20030129326A1 - Information recording medium - Google Patents

Information recording medium Download PDF

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Publication number
US20030129326A1
US20030129326A1 US09/477,725 US47772500A US2003129326A1 US 20030129326 A1 US20030129326 A1 US 20030129326A1 US 47772500 A US47772500 A US 47772500A US 2003129326 A1 US2003129326 A1 US 2003129326A1
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US
United States
Prior art keywords
liquid crystal
information recording
recording medium
electrodes
crystal material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/477,725
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English (en)
Inventor
Hiroki Maeda
Kyoko Kogo
Junichi Hanna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Assigned to DAI NIPPON PRINTING CO., LTD. reassignment DAI NIPPON PRINTING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HANNA, JUNICHI, KOGO, KYOKO, MAEDA, HIROKI
Publication of US20030129326A1 publication Critical patent/US20030129326A1/en
Priority to US10/713,194 priority Critical patent/US7550181B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/25—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing liquid crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/02—Liquid crystal materials characterised by optical, electrical or physical properties of the components, in general
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/04—Charge transferring layer characterised by chemical composition, i.e. conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/06—Substrate layer characterised by chemical composition
    • C09K2323/061—Inorganic, e.g. ceramic, metallic or glass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0055—Erasing
    • G11B7/00555—Erasing involving liquid crystal media
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/006—Overwriting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/913—Material designed to be responsive to temperature, light, moisture

Definitions

  • the present invention relates to an information recording medium, and more particularly to an information recording medium utilizing a stable change in specific charge-transport properties of a liquid crystal material.
  • the present invention has been made as a result of attention to a property of a liquid crystal material such that the charge-transport properties of the liquid crystal material are stably varied upon phase transfer between a plurality of liquid crystal phases, and it is an object of the present invention to provide a novel information recording medium which records information upon the application of thermal energy and reads the recorded information by detecting the value of photoelectric current generated by light applied to an information recorded portion and, in addition, can realize multi-valued information recording or analog information recording.
  • an information recording medium comprising: a pair of electrodes; and a liquid crystal material filled into a gap between said electrodes, said liquid crystal material having a property such that the charge-transport properties are varied according to the phase transfer between a plurality of stable liquid crystal phases of the liquid crystal and/or the history of the phase transfer.
  • the phase transfer of the liquid crystal material occurs upon a change in temperature of the liquid crystal material. This phase transfer is reversible, and the domain structure of each varied liquid crystal phase is stable.
  • information may be recorded by applying thermal energy, and the recorded information may be read by measuring the value of photoelectric current generated by light applied to the information recorded portion.
  • the information recording medium of the present invention skillfully utilizes phase transfer between a plurality of stable liquid crystal phases of a liquid crystal material and/or a property such that the charge-transport properties are changed according to the history of the phase transfer.
  • the liquid crystal material layer has a single layer structure, it is possible to realize information recording which relies upon a phase change as a result of phase transfer between two or more liquid crystal phases, and information recording depending upon the level of thermal energy. Therefore, not only binary digital information but also multi-valued information or analog information may be recorded.
  • the present invention is also advantageous in that the information recording medium can be simply produced.
  • FIG. 1 is a cross-sectional view showing the construction of an information recording medium according to one embodiment of the present invention.
  • FIG. 1 shows one embodiment of the information recording medium according to the present invention.
  • This information recording medium comprises: a pair of substrates 1 a and 1 b; electrodes 2 a and 2 b provided respectively on the substrates 1 a and 1 b; spacers 4 provided between the electrodes 2 a and 2 b to form a gap between the electrodes 2 a and 2 b; and a liquid crystal material 3 filled into the gap.
  • This liquid crystal material has a property such that the charge-transport properties of the liquid crystal material are varied according to phase transfer of the liquid crystal material between a plurality of stable liquid crystal phases.
  • At least one of the substrates 1 a and 1 b is formed of a light-transparent material, such as glass, although the material is not particularly limited. Electrodes provided on the substrates are preferably transparent electrodes of ITO (indium tin oxide) or the like.
  • ITO indium tin oxide
  • the pair of substrates for constituting cells of the information recording medium are integrated with each other through the spacers 4 with the aid of fixing means, such as an adhesive, and a liquid crystal material is filled into the gap created between the substrates.
  • the liquid crystal material is preferably a bipolar photoconductive liquid crystal
  • specific examples of preferred liquid crystal materials usable herein include rodlike liquid crystal systems, for example, phenylnaphthalene liquid crystals, such as 2-(4′-octylphenyl)-6-dodecyloxynaphthalene (abbreviated to “8-PNP-012”), 2-(4′-octylphenyl)-6-butyloxynaphthalene (abbreviated to “8-PNP-04”), and 10-PNP-09, and biphenyl liquid crystals, such as 2-4′-heptyloxy-4′-octylbiphenyl (abbreviated to “60-BP-8”).
  • phenylnaphthalene liquid crystals such as 2-(4′-octylphenyl)-6-dodecyloxynaphthalene (abbreviated to “8-PNP-012”), 2-(4′-oct
  • Monopolar photoconductive liquid crystals may also be preferably used so far as the polarity of the voltage applied to electrodes, to which excitation light is applied, is selected.
  • Specific examples of preferred monopolar photoconductive liquid crystals usable herein include phenylbenzothiazole liquid crystals, for example, biphenyl liquid crystals having carbonyl and alkoxy in their ends, such as 2-(4′-heptyloxyphenyl)-6-dodecylthiobenzothiazole (abbreviated to “70-PBT-S12”), 4-heptyloxy-4′-dodecylbiphenyl (abbreviated to “70-BPCO-11”), and 4-hexyloxy-4′-butanoylbiphenyl (abbreviated to “60-BP-CO-4”).
  • phenylbenzothiazole liquid crystals for example, biphenyl liquid crystals having carbonyl and alkoxy in their ends, such as 2-(4′-heptyl
  • the 8-PNP-012 exhibits a phase transfer behavior of Cryst. ⁇ 79° C.-SmB-101° C.-SmA-121° C.-Iso.
  • the mobility is 1.6 ⁇ 10 ⁇ 3 cm 2 /Vs
  • the mobility is 2.5 ⁇ 10 ⁇ 4 cm 2 /Vs.
  • the specific liquid crystal material has a property such that the charge-transport properties are varied according to phase transfer caused by a change in temperature between two or more stable liquid phases.
  • the charge-transport properties are varied according to phase transfer caused by a change in temperature between two or more stable liquid phases.
  • the specific polydomain structure of the liquid crystal phase formed does not inhibit the charge-transport properties.
  • the size of the gap between the electrodes is larger than the domain size at least in the initial state of the liquid crystal material. More specifically, the thickness between the pair of electrodes preferably satisfies both requirements represented by inequalities (A) and (B):
  • the distance between the electrodes is suitably in the range of 1.5 to 150 ⁇ m, more preferably 5.0 to 50.0 ⁇ m.
  • phase transfer of the liquid crystal material occurs upon a change in temperature of the liquid crystal material. More specifically, phase transfer or a change in domain structure attributable to the phase transfer can be created by thermal energy application means, such as a thermal head or a laser beam. Further, the use of the thermal energy application means can realize high-density information recording.
  • thermal energy is supplied to the whole area of the cell or a part of the cell.
  • This creates phase transfer or a change in domain structure attributable to the phase transfer according to the thermal energy applied to the liquid crystal material layer.
  • the charge-transport properties are varied according to the transferred phase.
  • the domain structure in the transferred phase is stable unless thermal energy on such a level as to cause transfer to the isotropic phase is applied to the same site. Thus, inherent information can be recorded.
  • the magnitude of photoelectric current attributable to charges, which have been injected by the application of light (for example, pulsed light as a trigger) into the information recorded portion is determined by the charge-transport properties in the light applied site. Therefore, the recorded information can be read by detecting the quantity as a current value from the electrode.
  • varying the level of thermal energy applied to thereby develop charge-transport properties between those of two phases according to the energy level can realize binary digital information recording, as well as multi-valued or analog information recording.
  • the background for information recording may be in a state such that the charge-transport properties are inhibited attributable to polycrystalline structural defects in the initial state of the liquid crystal charge-transport material, and, in this case, the information recording may be carried out by phase transfer caused in the background upon the application of thermal energy.
  • Glass substrates provided with ITO were disposed as transparent electrodes so as to face each other while providing a gap of 150 ⁇ m between the electrodes through a polyimide sheet as a spacer.
  • the spacing between both the substrates was fixed by means of a thermoset resin to form a sandwich cell.
  • a liquid crystalline charge-transport material (8-PNP-012) in the form of an isotropic phase (150° C.) was poured into the sandwich cell by capillarity.
  • molecule aligning treatment which is usually required, is not particularly necessary, because the liquid crystal material has a property such that the material molecules used in its major axis direction are aligned horizontally to the glass substrate. This property is utilized in the present production example.
  • the basic shape of the domain structure is stably maintained until the temperature is again raised to create an isotropic phase.
  • the rate of cooling for transfer from the isotropic phase to the liquid crystal phase is a major factor which determines whether or not fine domains can be stably present.
  • the TOF (time-of-flight) method was used to measure the charge-transport properties of the cell, occupied by domains smaller than the cell gap, prepared according to the above procedure.
  • the time necessary for the carrier generated in the sample to travel to the counter electrode is investigated from a transient photoelectric current waveform obtained by the application of pulsed light, and the carrier mobility is determined based on the results.
  • a pulsed light of a nitrogen laser pulse width 600 psec, wavelength 337 nm, output 40 ⁇ J
  • a direct voltage maximum 500 V
  • the rewriting is not necessarily required to be carried out in electrode region units. That is, even when any region within at least one pair of counter electrodes is selectively rewritten, the written information can be read in terms of the charge-transport properties and the current value, for example, by selectively applying a read-out light utilizing scanning irradiation.
  • Rewriting (2) When a cell in an off state or a region subjected to the above writing was heated to a temperature (130° C.) at which the isotropic phase appeared followed by cooling to the SmB phase at a rate of 10° C./min, a region different from the off-state region was obtained wherein the domain size was larger than the cell gap. Both rewriting of the whole cell and selective rewriting of the domain size using a thermal head having a head temperature of 150° C. were carried out. As a result, more clear rewriting of the charge-transfer properties than the case of the rewriting (1) could be confirmed.
  • the degree of the change in domain structure caused by the phase transfer can be regulated by continuously varying the level of thermal energy for writing. This can realize intermediate control in charge-transport properties and current values as output information.
  • the present invention can provide a novel information recording medium which records information upon the application of thermal energy, reads the recorded information by detecting the value of photoelectric current generated by light applied to the information recorded portion, and can realize multi-valued information recording or analog information recording.

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Memories (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
US09/477,725 1999-01-08 2000-01-05 Information recording medium Abandoned US20030129326A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/713,194 US7550181B2 (en) 1999-01-08 2003-11-17 Information recording medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP00295599A JP4074719B2 (ja) 1999-01-08 1999-01-08 情報記録媒体
JP2955/1999 1999-01-08

Related Child Applications (1)

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US10/713,194 Continuation US7550181B2 (en) 1999-01-08 2003-11-17 Information recording medium

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US20030129326A1 true US20030129326A1 (en) 2003-07-10

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US09/477,725 Abandoned US20030129326A1 (en) 1999-01-08 2000-01-05 Information recording medium
US10/713,194 Expired - Fee Related US7550181B2 (en) 1999-01-08 2003-11-17 Information recording medium

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Application Number Title Priority Date Filing Date
US10/713,194 Expired - Fee Related US7550181B2 (en) 1999-01-08 2003-11-17 Information recording medium

Country Status (4)

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US (2) US20030129326A1 (de)
EP (1) EP1022732B1 (de)
JP (1) JP4074719B2 (de)
DE (1) DE60023368T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100133498A1 (en) * 2005-04-28 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060274633A1 (en) * 2003-02-27 2006-12-07 Meinders Erwin R Multi-stack information carrier
JP4883381B2 (ja) * 2004-03-29 2012-02-22 大日本印刷株式会社 液晶性有機半導体材料およびそれを用いた有機半導体構造物
JP5089074B2 (ja) * 2005-04-28 2012-12-05 株式会社半導体エネルギー研究所 記憶装置
JP5252827B2 (ja) * 2006-04-28 2013-07-31 株式会社半導体エネルギー研究所 記憶素子

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Publication number Priority date Publication date Assignee Title
US20100133498A1 (en) * 2005-04-28 2010-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8264889B2 (en) 2005-04-28 2012-09-11 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device

Also Published As

Publication number Publication date
DE60023368D1 (de) 2005-12-01
US20040095517A1 (en) 2004-05-20
US7550181B2 (en) 2009-06-23
JP4074719B2 (ja) 2008-04-09
JP2000207770A (ja) 2000-07-28
DE60023368T2 (de) 2006-07-20
EP1022732A1 (de) 2000-07-26
EP1022732B1 (de) 2005-10-26

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